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RFSoC-based radio-frequency reflectometry in gate-defined bilayer graphene quantum devices
Authors:
Motoya Shinozaki,
Tomoya Johmen,
Aruto Hosaka,
Takumi Seo,
Shunsuke Yashima,
Akitomi Shirachi,
Kosuke Noro,
Shoichi Sato,
Takashi Kumasaka,
Tsuyoshi Yoshida,
Tomohiro Otsuka
Abstract:
Quantum computers require both scalability and high performance for practical applications. While semiconductor quantum dots are promising candidates for quantum bits, the complexity of measurement setups poses an important challenge for scaling up these devices. Here, radio-frequency system-on-chip (RFSoC) technology is exepcted for a promising approach that combines scalability with flexibility.…
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Quantum computers require both scalability and high performance for practical applications. While semiconductor quantum dots are promising candidates for quantum bits, the complexity of measurement setups poses an important challenge for scaling up these devices. Here, radio-frequency system-on-chip (RFSoC) technology is exepcted for a promising approach that combines scalability with flexibility. In this paper, we demonstrate RF reflectometry in gate-defined bilayer graphene quantum devices using RFSoC-based measurement architecture. By controlling the confinement strength through gate voltages, we achieve both Fabry-Pérot interferometer and quantum dot operations in a single device. Although impedance matching conditions currently limit the measurement sensitivity, we identify pathways for optimization through tunnel barrier engineering and resonator design. These results represent a step toward integrating high-bandwidth measurements with scalable quantum devices.
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Submitted 21 February, 2025;
originally announced February 2025.
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Radio-frequency reflectometry in bilayer graphene devices utilizing micro graphite back-gates
Authors:
Tomoya Johmen,
Motoya Shinozaki,
Yoshihiro Fujiwara,
Takumi Aizawa,
Tomohiro Otsuka
Abstract:
Bilayer graphene is an attractive material that realizes high-quality two-dimensional electron gas with a controllable bandgap. By utilizing the bandgap, electrical gate tuning of the carrier is possible and formation of nanostructures such as quantum dots have been reported. To probe the dynamics of the electronics states and realize applications for quantum bit devices, RF-reflectometry which en…
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Bilayer graphene is an attractive material that realizes high-quality two-dimensional electron gas with a controllable bandgap. By utilizing the bandgap, electrical gate tuning of the carrier is possible and formation of nanostructures such as quantum dots have been reported. To probe the dynamics of the electronics states and realize applications for quantum bit devices, RF-reflectometry which enables high-speed electric measurements is important. Here we demonstrate RF-reflectometry in bilayer graphene devices. We utilize a micro graphite back-gate and an undoped Si substrate to reduce the parasitic capacitance which degrades the RF-reflectometry. We measure the resonance properties of a tank circuit which contains the bilayer graphene device. We form RF-reflectmetory setup and compared the result with the DC measurement, and confirmed their consistency. We also measure Coulomb diamonds of quantum dots possibly formed by bubbles and confirm that RF-reflectometry of quantum dots can be performed. This technique enables high-speed measurements of bilayer graphene quantum dots and contributes to the research of bilayer graphene-based quantum devices by fast readout of the states.
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Submitted 30 November, 2022;
originally announced December 2022.
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Formation of quantum dots in MoS2 with cryogenic Bi contacts and intrinsic Schottky barriers
Authors:
Riku Tataka,
Alka Sharma,
Tomoya Johmen,
Takeshi Kumasaka,
Motoya Shinozaki,
Yong P. Chen,
Tomohiro Otsuka
Abstract:
The recent advancement in two-dimensional (2D) materials-based quantum confinement has provided an opportunity to investigate and manipulate electron transport for quantum applications. However, the issues of metal/semiconductor interface effects create a hurdle to realize the artificial fabrication of the quantum dot and study the quantum transport. Here, we utilize the strategy of employing the…
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The recent advancement in two-dimensional (2D) materials-based quantum confinement has provided an opportunity to investigate and manipulate electron transport for quantum applications. However, the issues of metal/semiconductor interface effects create a hurdle to realize the artificial fabrication of the quantum dot and study the quantum transport. Here, we utilize the strategy of employing the semimetal for Ohmic contacts with transition metal dichalcogenides especially, multilayer MoS2 and successfully fabricate the MoS2-Bi based FET devices. We observe the Ohmic behavior in the MoS2-Bi devices at cryogenic temperatures 4.2, 2.3 and 0.4 K. We also utilize intrinsic Schottky barriers formed at the interface between MoS2 and Au for the gate electrodes to form and control quantum dots. We observed Coulomb diamonds in MoS2 devices at cryogenic temperature. Our results of quantum transport in MoS2 could serve as a stepping stone for investigating novel quantum effects such as spin-valley coupling and the manipulation of qubit systems.
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Submitted 21 October, 2022;
originally announced October 2022.
