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Determination of the single-ion anisotropy energy in a S = 5/2 kagome antiferromagnet using X-ray absorption spectroscopy
Authors:
M. A. de Vries,
T. K. Johal,
A. Mirone,
J. S. Claydon,
G. J. Nilsen,
H. M. Ronnow,
G. van der Laan,
A. Harrison
Abstract:
We report x-ray absorption and x-ray linear dichroism measurements at the Fe L2,3 edges of the geometrically frustrated systems of potassium and hydronium iron jarosite. Comparison with simulated spectra, involving ligand-field multiplet calculations modelling the 3d-2p hybridization between the iron ion and the oxygen ligands, has yielded accurate estimates for the ligand metal-ion hybridizatio…
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We report x-ray absorption and x-ray linear dichroism measurements at the Fe L2,3 edges of the geometrically frustrated systems of potassium and hydronium iron jarosite. Comparison with simulated spectra, involving ligand-field multiplet calculations modelling the 3d-2p hybridization between the iron ion and the oxygen ligands, has yielded accurate estimates for the ligand metal-ion hybridization and the resulting single-ion crystal field anisotropy energy. Using this method we provide an experimentally verified scenario for the appearance of a single-ion anisotropy in this nominally high-spin 3d5 orbital singlet 6S system, which accounts for features of the spin-wave dispersion in the long-range ordered ground state of potassium iron jarosite.
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Submitted 15 December, 2008; v1 submitted 14 August, 2008;
originally announced August 2008.
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Valence band orbital polarization in III-V ferromagnetic semiconductors
Authors:
A. A. Freeman,
K. W. Edmonds,
G. van der Laan,
R. P. Campion,
N. R. S. Farley,
A. W. Rushforth,
T. K. Johal,
C. T. Foxon,
B. L. Gallagher,
A. Rogalev,
F. Wilhelm
Abstract:
The element-specific technique of x-ray magnetic circular dichroism (XMCD) is used to directly determine the magnitude and character of the valence band orbital magnetic moments in (III,Mn)As ferromagnetic semiconductors. A distinct dichroism is observed at the As K absorption edge, yielding an As 4p orbital magnetic moment of around -0.1 Bohr magnetons per valence band hole. This is strongly in…
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The element-specific technique of x-ray magnetic circular dichroism (XMCD) is used to directly determine the magnitude and character of the valence band orbital magnetic moments in (III,Mn)As ferromagnetic semiconductors. A distinct dichroism is observed at the As K absorption edge, yielding an As 4p orbital magnetic moment of around -0.1 Bohr magnetons per valence band hole. This is strongly influenced by strain, indicating its crucial influence on the magnetic anisotropy. The dichroism at the Ga K edge is much weaker. The K edge XMCD signals for Mn and As both have positive sign, which indicates the important contribution of Mn 4p states to the Mn K edge spectra.
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Submitted 4 January, 2008;
originally announced January 2008.
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Low-temperature magnetization of (Ga,Mn)As semiconductors
Authors:
T. Jungwirth,
J. Masek,
K. Y. Wang,
K. W. Edmonds,
M. Sawicki,
M. Polini,
Jairo Sinova,
A. H. MacDonald,
R. P. Campion,
L. X. Zhao,
N. R. S. Farley,
T. K. Johal,
G. van der Laan,
C. T. Foxon,
B. L. Gallagher
Abstract:
We report on a comprehensive study of the ferromagnetic moment per Mn atom in (Ga,Mn)As ferromagnetic semiconductors. Theoretical discussion is based on microscopic calculations and on an effective model of Mn local moments antiferromagnetically coupled to valence band hole spins. The validity of the effective model over the range of doping studied is assessed by comparing with microscopic tight…
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We report on a comprehensive study of the ferromagnetic moment per Mn atom in (Ga,Mn)As ferromagnetic semiconductors. Theoretical discussion is based on microscopic calculations and on an effective model of Mn local moments antiferromagnetically coupled to valence band hole spins. The validity of the effective model over the range of doping studied is assessed by comparing with microscopic tight-binding/coherent-potential approximation calculations. Using the virtual crystal k.p model for hole states, we evaluate the zero-temperature mean-field contributions to the magnetization from the hole kinetic and exchange energies, and magnetization suppression due to quantum uctuations of Mn moment orientations around their mean-field ground state values. Experimental low-temperature ferromagnetic moments per Mn are obtained by superconducting quantum interference device and x-ray magnetic circular dichroism measurements in a series of (Ga,Mn)As semiconductors with nominal Mn doping ranging from ~2% to 8%. Hall measurements in as-grown and annealed samples are used to estimate the number of uncompensated substitutional Mn moments. Based on our comparison between experiment and theory we conclude that all these Mn moments in high quality (Ga,Mn)As materials have nearly parallel ground state alignment.
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Submitted 10 August, 2005;
originally announced August 2005.
