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Inherited Weak Topological Insulator Signatures in Topological Hourglass Semimetal Nb3XTe6 (X = Si, Ge)
Authors:
Q. Wan,
T. Y. Yang,
S. Li,
M. Yang,
Z. Zhu,
C. L. Wu,
C. Peng,
S. K. Mo,
W. Wu,
Z. H. Chen,
Y. B. Huang,
L. L. Lev,
V. N. Strocov,
J. Hu,
Z. Q. Mao,
Hao Zheng,
J. F. Jia,
Y. G. Shi,
Shengyuan A. Yang,
N. Xu
Abstract:
Using spin-resolved and angle-resolved photoemission spectroscopy and first-principles calculations, we have identified bulk band inversion and spin polarized surface state evolved from a weak topological insulator (TI) phase in van der Waals materials Nb3XTe6 (X = Si, Ge). The fingerprints of weak TI homologically emerge with hourglass fermions, as multi nodal chains composed by the same pair of…
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Using spin-resolved and angle-resolved photoemission spectroscopy and first-principles calculations, we have identified bulk band inversion and spin polarized surface state evolved from a weak topological insulator (TI) phase in van der Waals materials Nb3XTe6 (X = Si, Ge). The fingerprints of weak TI homologically emerge with hourglass fermions, as multi nodal chains composed by the same pair of valence and conduction bands gapped by spin orbit coupling. The novel topological state, with a pair of valence and conduction bands encoding both weak TI and hourglass semimetal nature, is essential and guaranteed by nonsymmorphic symmetry. It is distinct from TIs studied previously based on band inversions without symmetry protections.
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Submitted 15 April, 2021;
originally announced April 2021.
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Antiferromagnetic order in epitaxial FeSe films on SrTiO3
Authors:
Y. Zhou,
L. Miao,
P. Wang,
F. F. Zhu,
W. X. Jiang,
S. W. Jiang,
Y. Zhang,
H. F. Ding,
H. Zheng,
J. F. Jia,
D. Qian,
D. Wu
Abstract:
Single monolayer FeSe film grown on Nb-doped SrTiO$_3$(001) substrate shows the highest superconducting transition temperature (T$_C$ $\sim$ 100 K) among the iron-based superconductors (iron-pnictide), while T$_C$ of bulk FeSe is only $\sim$ 8 K. Antiferromagnetic spin fluctuations were believed to be crucial in iron-pnictides, which has inspired several proposals to understand the FeSe/SrTiO$_3$…
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Single monolayer FeSe film grown on Nb-doped SrTiO$_3$(001) substrate shows the highest superconducting transition temperature (T$_C$ $\sim$ 100 K) among the iron-based superconductors (iron-pnictide), while T$_C$ of bulk FeSe is only $\sim$ 8 K. Antiferromagnetic spin fluctuations were believed to be crucial in iron-pnictides, which has inspired several proposals to understand the FeSe/SrTiO$_3$ system. Although bulk FeSe does not show the antiferromagnetic order, calculations suggest that the parent FeSe/SrTiO$_3$ films are AFM. Experimentally, due to lacking of direct probe, the magnetic state of FeSe/SrTiO$_3$ films remains mysterious. Here, we report the direct evidences of the antiferromagnetic order in the parent FeSe/SrTiO$_3$ films by the magnetic exchange bias effect measurements. The phase transition temperature is $\geq$ 140 K for single monolayer film. The AFM order disappears after electron doping.
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Submitted 9 November, 2017; v1 submitted 11 November, 2016;
originally announced November 2016.
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Electronic structure of Ba(Zn0.875Mn0.125)2As2 studied by angle-resolved photoemission spectroscopy
Authors:
Fengfeng Zhu,
W. X. Jiang,
P. Li,
Z. Q. Wang,
H. Y. Man,
Y. Y. Li,
Canhua Liu,
D. D. Guan,
J. F. Jia,
F. L. Ning,
Weidong Luo,
D. Qian
Abstract:
Electronic structure of single crystalline Ba(Zn$_{0.875}$Mn$_{0.125}$)$_{2}$As$_{2}$, parent compound of the recently founded high-temperature ferromagnetic semiconductor, was studied by high-resolution photoemission spectroscopy (ARPES). Through systematically photon energy and polarization dependent measurements, the energy bands along the out-of-plane and in-plane directions were experimentall…
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Electronic structure of single crystalline Ba(Zn$_{0.875}$Mn$_{0.125}$)$_{2}$As$_{2}$, parent compound of the recently founded high-temperature ferromagnetic semiconductor, was studied by high-resolution photoemission spectroscopy (ARPES). Through systematically photon energy and polarization dependent measurements, the energy bands along the out-of-plane and in-plane directions were experimentally determined. Except the localized states of Mn, the measured band dispersions agree very well with the first-principle calculations of undoped BaZn$_{2}$As$_{2}$. A new feature related to Mn 3d states was identified at the binding energies of about -1.6 eV besides the previously observed feature at about -3.3 eV. We suggest that the hybridization between Mn and As orbitals strongly enhanced the density of states around -1.6 eV. Although our resolution is much better compared with previous soft X-ray photoemission experiments, no clear hybridization gap between Mn 3d states and the valence bands proposed by previous model calculations was detected.
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Submitted 11 November, 2016;
originally announced November 2016.
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Strain in Epitaxial High-Index Bi2Se3(221) Films Grown by Molecular-Beam Epitaxy
Authors:
B. Li,
W. G. Chen,
X. Guo,
W. K. Ho,
X. Q. Dai,
J. F. Jia,
M. H. Xie
Abstract:
High-index Bi2Se3(221) film has been grown on In2Se3-buffered GaAs(001), in which a much retarded strain relaxation dynamics is recorded. The slow strain-relaxation process of in epitaxial Bi2Se3(221) can be attributed to the layered structure of Bi2Se3 crystal, where the epifilm grown along [221] is like a pile of weakly-coupled quintuple layer slabs stacked side-by-side on substrate. Finally, we…
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High-index Bi2Se3(221) film has been grown on In2Se3-buffered GaAs(001), in which a much retarded strain relaxation dynamics is recorded. The slow strain-relaxation process of in epitaxial Bi2Se3(221) can be attributed to the layered structure of Bi2Se3 crystal, where the epifilm grown along [221] is like a pile of weakly-coupled quintuple layer slabs stacked side-by-side on substrate. Finally, we have revealed the strong chemical bonding at the interface of Bi2Se3 and In2Se3 by plotting differential charge contour calculated by first-principle method. This study points to the feasibility of achieving strained TIs for manipulating the properties of topological systems.
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Submitted 14 September, 2016; v1 submitted 20 June, 2016;
originally announced June 2016.
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Molecular-beam epitaxy of monolayer and bilayer WSe2: A scanning tunneling microscopy/spectroscopy study and deduction of exciton binding energy
Authors:
H. J. Liu,
L. Jiao,
L. Xie,
F. Yang,
J. L. Chen,
W. K. Ho,
C. L. Gao,
J. F. Jia,
X. D. Cui,
M. H. Xie
Abstract:
Interests in two-dimensional transition-metal dichalcogenides have prompted some recent efforts to grow ultrathin layers of these materials epitaxially using molecular-beam epitaxy. However, growths of monolayer and bilayer WSe2, an important member of the transition-metal dichalcogenides family, by the molecular-beam epitaxy method remain uncharted probably because of the difficulty in generating…
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Interests in two-dimensional transition-metal dichalcogenides have prompted some recent efforts to grow ultrathin layers of these materials epitaxially using molecular-beam epitaxy. However, growths of monolayer and bilayer WSe2, an important member of the transition-metal dichalcogenides family, by the molecular-beam epitaxy method remain uncharted probably because of the difficulty in generating tungsten fluxes from the elemental source. In this work, we present a scanning tunneling microscopy and spectroscopy study of molecular-beam epitaxy-grown WSe2 monolayer and bilayer, showing atomically flat epifilm with no domain boundary defect. This contrasts epitaxial MoSe2 films grown by the same method, where a dense network of the domain boudaries defects is present. The scanning tunneling spectroscopy measurements of monolayer and bilayer WSe2 domains of the same sample reveal not only the bandgap narrowing upon increasing the film thickness from monolayer to bilayer, but also a band-bending effect across the boundary between monolayer and bilayer domains. This band-bending appears to be dictated by the edge states at steps of the bilayer islands. Finally, comparison is made between the scanning tunneling spectroscopy-measured electronic bandgaps with the exciton emission energies measured by photoluminescence, and the exciton binding energies in monolayer and bilayer WSe2/MoSe2 are thus estimated.
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Submitted 14 June, 2015;
originally announced June 2015.
