Showing 1–5 of 5 results for author: Jarman, J

Ideal refocusing of an optically active spin qubit under strong hyperfine interactions

Authors: Leon Zaporski, Noah Shofer, Jonathan H. Bodey, Santanu Manna, George Gillard, Daniel M. Jackson, Martin Hayhurst Appel, Christian Schimpf, Saimon Covre da Silva, John Jarman, Geoffroy Delamare, Gunhee Park, Urs Haeusler, Evgeny A. Chekhovich, Armando Rastelli, Dorian A. Gangloff, Mete Atatüre, Claire Le Gall

Abstract: Combining highly coherent spin control with efficient light-matter coupling offers great opportunities for quantum communication and networks, as well as quantum computing. Optically active semiconductor quantum dots have unparalleled photonic properties, but also modest spin coherence limited by their resident nuclei. Here, we demonstrate that eliminating strain inhomogeneity using lattice-matche… ▽ More Combining highly coherent spin control with efficient light-matter coupling offers great opportunities for quantum communication and networks, as well as quantum computing. Optically active semiconductor quantum dots have unparalleled photonic properties, but also modest spin coherence limited by their resident nuclei. Here, we demonstrate that eliminating strain inhomogeneity using lattice-matched GaAs-AlGaAs quantum dot devices prolongs the electron spin coherence by nearly two orders of magnitude, beyond 0.113(3) ms. To do this, we leverage the 99.30(5)% fidelity of our optical pi-pulse gates to implement dynamical decoupling. We vary the number of decoupling pulses up to N = 81 and find a coherence time scaling of N^{0.75(2)}. This scaling manifests an ideal refocusing of strong interactions between the electron and the nuclear-spin ensemble, holding the promise of lifetime-limited spin coherence. Our findings demonstrate that the most punishing material science challenge for such quantum-dot devices has a remedy, and constitute the basis for highly coherent spin-photon interfaces. △ Less

Submitted 2 June, 2022; originally announced June 2022.

Three-photon excitation of quantum two-level systems

Authors: Viviana Villafañe, Bianca Scaparra, Manuel Rieger, Stefan Appel, Rahul Trivedi, Tongtong Zhu, John Jarman, Rachel A. Oliver, Robert A. Taylor, Jonathan J. Finley, Kai Mueller

Abstract: We demonstrate that semiconductor quantum dots can be excited efficiently in a resonant three-photon process, whilst resonant two-photon excitation is highly suppressed. Time-dependent Floquet theory is used to quantify the strength of the multi-photon processes and model the experimental results. The efficiency of these transitions can be drawn directly from parity considerations in the electron… ▽ More We demonstrate that semiconductor quantum dots can be excited efficiently in a resonant three-photon process, whilst resonant two-photon excitation is highly suppressed. Time-dependent Floquet theory is used to quantify the strength of the multi-photon processes and model the experimental results. The efficiency of these transitions can be drawn directly from parity considerations in the electron and hole wavefunctions in semiconductor quantum dots. Finally, we exploit this technique to probe intrinsic properties of InGaN quantum dots. In contrast to non-resonant excitation, slow relaxation of charge carriers is avoided which allows us to measure directly the radiative lifetime of the lowest energy exciton states. Since the emission energy is detuned far from the resonant driving laser field, polarization filtering is not required and emission with a greater degree of linear polarization is observed compared to non-resonant excitation. △ Less

Submitted 31 January, 2023; v1 submitted 4 February, 2022; originally announced February 2022.

Comments: 6 pages, 3 figures

Room-temperature optically detected magnetic resonance of single defects in hexagonal boron nitride

Authors: Hannah L. Stern, John Jarman, Qiushi Gu, Simone Eizagirre Barker, Noah Mendelson, Dipankar Chugh, Sam Schott, Hoe H. Tan, Henning Sirringhaus, Igor Aharonovich, Mete Atatüre

Abstract: Optically addressable spins in materials are important platforms for quantum technologies, such as repeaters and sensors. Identification of such systems in two-dimensional (2d) layered materials offers advantages over their bulk counterparts, as their reduced dimensionality enables more feasible on-chip integration into devices. Here, we report optically detected magnetic resonance (ODMR) from pre… ▽ More Optically addressable spins in materials are important platforms for quantum technologies, such as repeaters and sensors. Identification of such systems in two-dimensional (2d) layered materials offers advantages over their bulk counterparts, as their reduced dimensionality enables more feasible on-chip integration into devices. Here, we report optically detected magnetic resonance (ODMR) from previously identified carbon-related defects in 2d hexagonal boron nitride (hBN). We show that single-defect ODMR contrast can be as strong as 6% and displays a magnetic-field dependence with both positive or negative sign per defect. This bipolarity can shed light into low contrast reported recently for ensemble ODMR measurements for these defects. Further, the ODMR lineshape comprises a doublet resonance, suggesting either low zero-field splitting or hyperfine coupling. Our results offer a promising route towards realising a room-temperature spin-photon quantum interface in hexagonal boron nitride. △ Less

Submitted 30 March, 2021; originally announced March 2021.

Reduction of radiative lifetime and slow-timescale spectral diffusion in InGaN polarized single-photon sources

Authors: Tong Wang, Tongtong Zhu, Tim J. Puchtler, Claudius C. Kocher, Helen P. Springbett, John C. Jarman, Luke P. Nuttall, Rachel A. Oliver, Robert A. Taylor

Abstract: Non-polar (11-20) a-plane quantum dots (QDs) are strong candidates for both > 200 K on-chip ultrafast polarized single-photon generation and the investigation of high temperature semiconductor QD photophysics. In this work, we report progress in the growth of a-plane InGaN QDs with a quasi-two-temperature method, which produces smooth epilayers and significantly reduced carrier trapping sites in t… ▽ More Non-polar (11-20) a-plane quantum dots (QDs) are strong candidates for both > 200 K on-chip ultrafast polarized single-photon generation and the investigation of high temperature semiconductor QD photophysics. In this work, we report progress in the growth of a-plane InGaN QDs with a quasi-two-temperature method, which produces smooth epilayers and significantly reduced carrier trapping sites in the proximity of the QDs. Optical characterization has confirmed the ability of such QDs to emit polarized single photons and we have recorded a ~ 45% shorter average radiative lifetime and 65% reduction in the slow-timescale spectral diffusion compared to previous QDs. This growth method is an important development of the non-polar a-plane InGaN platform, opening up more possibilities in single-photon, lasing, and fundamental investigations. △ Less

Submitted 19 September, 2019; originally announced September 2019.

An ultrafast polarised single photon source at 220 K

Authors: Tong Wang, Tim J. Puchtler, Tongtong Zhu, John C. Jarman, Luke P. Nuttall, Rachel A. Oliver, Robert A. Taylor

Abstract: A crucial requirement for the realisation of efficient and scalable on-chip quantum communication is an ultrafast polarised single photon source operating beyond the Peltier cooling barrier of 200 K. While a few systems based on different materials and device structures have achieved single photon generation above this threshold, there has been no report of single quantum emitters with determinist… ▽ More A crucial requirement for the realisation of efficient and scalable on-chip quantum communication is an ultrafast polarised single photon source operating beyond the Peltier cooling barrier of 200 K. While a few systems based on different materials and device structures have achieved single photon generation above this threshold, there has been no report of single quantum emitters with deterministic polarisation properties at the same high temperature conditions. Here, we report the first device to simultaneously achieve single photon emission with a g(2)(0) of only 0.21, a high polarisation degree of 0.80, a fixed polarisation axis determined by the underlying crystallography, and a GHz repetition rate with a radiative lifetime of 357 ps at 220 K. The temperature insensitivity of these properties, together with the simple planar growth method, and absence of complex device geometries, makes this system an excellent candidate for on-chip applications in integrated systems. △ Less

Submitted 1 October, 2016; originally announced October 2016.