Showing 1–2 of 2 results for author: Jancu, J M

Quantum tailoring of electronic properties in covalently functionalized graphene: application to ammonia gas detection

Authors: A. Dammak, F. Raouafi, A. Cavanna, P. Rudolf, D. di Caprio, V. Sallet, A. Madouri, J. M. Jancu

Abstract: Functionalized graphene offers great potential in the field of rapid detection of gases at room temperature. We performed first-principles calculations to study the suitability of 4-sulfobenzenediazonium salts (4SBD) as bandgap modifier in graphene. The signature of unpaired spins is evidenced near the Fermi level owing to the symmetry breaking of graphene sublattices. 4SBD-chemisorbed on graphene… ▽ More Functionalized graphene offers great potential in the field of rapid detection of gases at room temperature. We performed first-principles calculations to study the suitability of 4-sulfobenzenediazonium salts (4SBD) as bandgap modifier in graphene. The signature of unpaired spins is evidenced near the Fermi level owing to the symmetry breaking of graphene sublattices. 4SBD-chemisorbed on graphene is found to be electronically sensitive to the presence of ammonia NH3 with increasing gas concentration. △ Less

Submitted 19 October, 2023; originally announced October 2023.

Journal ref: RSC Adv., 2022, 12, 36002

1.26 $μ$m intersubband transitions in In$_{0.3}$Ga$_{0.7}$As/AlAs quantum wells

Authors: Cesar Pascual Garcia, Andrea De Nardis, Vittorio Pellegrini, Jean Marc Jancu, Fabio Beltram, Bernhard H. Mueller, Lucia Sorba, Alfonso Franciosi

Abstract: We observed room-temperature intersubband transitions at 1.26 microns in n-doped type-II In$_{0.3}$Ga$_{0.7}$As/AlAs strained quantum wells. An improved tight-binding model was used to optimize the structure parameters in order to obtain the shortest wavelength intersubband transition ever achieved in a semiconductor system. The corresponding transitions occur between the first confined electron… ▽ More We observed room-temperature intersubband transitions at 1.26 microns in n-doped type-II In$_{0.3}$Ga$_{0.7}$As/AlAs strained quantum wells. An improved tight-binding model was used to optimize the structure parameters in order to obtain the shortest wavelength intersubband transition ever achieved in a semiconductor system. The corresponding transitions occur between the first confined electronic levels of the well following mid-infrared optical pumping of electrons from the barrier X-valley into the well ground state. △ Less

Submitted 8 November, 2000; originally announced November 2000.

Comments: To appear in Applied Physics Letters