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Neuromorphic Retina: An FPGA-based Emulator
Authors:
Prince Philip,
Pallab Kumar Nath,
Kapil Jainwal,
Andre van Schaik,
Chetan Singh Thakur
Abstract:
Implementing accurate models of the retina is a challenging task, particularly in the context of creating visual prosthetics and devices. Notwithstanding the presence of diverse artificial renditions of the retina, the imperative task persists to pursue a more realistic model. In this work, we are emulating a neuromorphic retina model on an FPGA. The key feature of this model is its powerful adapt…
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Implementing accurate models of the retina is a challenging task, particularly in the context of creating visual prosthetics and devices. Notwithstanding the presence of diverse artificial renditions of the retina, the imperative task persists to pursue a more realistic model. In this work, we are emulating a neuromorphic retina model on an FPGA. The key feature of this model is its powerful adaptation to luminance and contrast, which allows it to accurately emulate the sensitivity of the biological retina to changes in light levels. Phasic and tonic cells are realizable in the retina in the simplest way possible. Our FPGA implementation of the proposed biologically inspired digital retina, incorporating a receptive field with a center-surround structure, is reconfigurable and can support 128*128 pixel images at a frame rate of 200fps. It consumes 1720 slices, approximately 3.7k Look-Up Tables (LUTs), and Flip-Flops (FFs) on the FPGA. This implementation provides a high-performance, low-power, and small-area solution and could be a significant step forward in the development of biologically plausible retinal prostheses with enhanced information processing capabilities
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Submitted 15 January, 2025;
originally announced January 2025.
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Low-Frequency Noise Reduction Using In-Pixel Chopping To Enhance The Dynamic Range of a CMOS Image Sensor
Authors:
Kapil Jainwal
Abstract:
In this paper, a low-noise CMOS image sensor with enhanced dynamic range (DR), using an in-pixel chopping technique, is presented. The proposed in-pixel chopping technique is used to reduce the low-frequency or 1/f noise of the source follower (SF) in an active pixel sensor (APS), which is a major component of the temporal noise. A conventional 3T active pixel, with n-well/p-sub photodiode (PD), i…
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In this paper, a low-noise CMOS image sensor with enhanced dynamic range (DR), using an in-pixel chopping technique, is presented. The proposed in-pixel chopping technique is used to reduce the low-frequency or 1/f noise of the source follower (SF) in an active pixel sensor (APS), which is a major component of the temporal noise. A conventional 3T active pixel, with n-well/p-sub photodiode (PD), is modified to implement a chopper inside a pixel. A single minimum sized nMOS transistor is used in each pixel, without much compromising in the fill-factor (FF). Using chopping action the low-frequency noise of the source follower is modulated to the chopping frequency (f ch ) which is much higher than the maximum frequency of the input signal frequency band. The up-converted low-frequency noise is eliminated using a column level low-pass filter (LPF), in the later stage. The reduction in the temporal noise also results in an enhanced dynamic range of the image sensor. In addition, the readout consists of a column level high gain chopper amplifier also reduces the non-linearity of the source follower. To validate the proposed technique a prototype sensor consists of a 128x128 sized pixel array with in-pixel chopping and column level read-out circuitry, is fabricated in AMS 0.35 μm CMOS OPTO process. The pixel pitch is 10.5 um (horizontal and vertical both) with a fill-factor of around 30%. The temporal noise is measured as 280 uVrms at the chopping frequency (fch) of 8 MHz, which shows a reduction in the noise power by 11 dB. Due to the reduced noise floor, the dynamic range is enhanced from 65 dB to 76 dB, using the proposed technique.
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Submitted 25 November, 2018;
originally announced November 2018.
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1/f Noise Reduction using In-Pixel Chopping in CMOS Image Sensor
Authors:
Kapil Jainwal,
Mukul Sarkar
Abstract:
In this paper, an in-pixel chopping technique to reduce the low-frequency or 1/f noise of the source follower (SF) transistor in an active pixel sensor (APS) is presented. The SF low-frequency noise is modulated at higher frequencies through chopping, implemented inside the pixel, and in later stage eliminated using low-pass filtering. To implement the chopping, the conventional 3T APS architectur…
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In this paper, an in-pixel chopping technique to reduce the low-frequency or 1/f noise of the source follower (SF) transistor in an active pixel sensor (APS) is presented. The SF low-frequency noise is modulated at higher frequencies through chopping, implemented inside the pixel, and in later stage eliminated using low-pass filtering. To implement the chopping, the conventional 3T APS architecture is modified, with only one additional transistor of minimum size per pixel. Reduction in the noise also enhances the dynamic range (DR) of the image sensor. The test circuit is fabricated in UMC 0.18 um standard CMOS technology. The measured results show a reduction of 1/f noise by approximately 22 dB for 50 MHz chopping frequency.
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Submitted 27 July, 2018;
originally announced July 2018.
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Analysis and validation of low-frequency noise reduction in MOSFET circuits using variable duty cycle switched biasing
Authors:
Kapil Jainwal,
Mukul Sarkar,
Kushal Shah
Abstract:
Randomization of the trap state of defects present at the gate Si-SiO$_2$ interface of MOSFET is responsible for the low-frequency noise phenomena such as Random Telegraph Signal (RTS), burst, and 1/\textit{f} noise. In a previous work, theoretical modelling and analysis of the RTS noise in MOS transistor was presented and it was shown that this 1/\textit{f} noise can be reduced by decreasing the…
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Randomization of the trap state of defects present at the gate Si-SiO$_2$ interface of MOSFET is responsible for the low-frequency noise phenomena such as Random Telegraph Signal (RTS), burst, and 1/\textit{f} noise. In a previous work, theoretical modelling and analysis of the RTS noise in MOS transistor was presented and it was shown that this 1/\textit{f} noise can be reduced by decreasing the duty cycle ($f_{D}$) of switched biasing signal. In this paper, an extended analysis of this 1/\textit{f} noise reduction model is presented and it is shown that the RTS noise reduction is accompanied with shift in the corner frequency ($f_{c}$) of the 1/\textit{f} noise and the value of shift is a function of continuous ON time ({$T_{on}$}) of the device. This 1/\textit{f} noise reduction is also experimentally demonstrated in this paper using a circuit configuration with multiple identical transistor stages which produces a continuous output instead of a discrete signal. The circuit is implemented in 180~nm standard CMOS technology, from UMC. According to the measurement results, the proposed technique reduces the 1/\textit{f} noise by approximately 5.9 dB at $f_{s}$ of 1~KHz for 2 stage, which is extended up to 16 dB at $f_{s}$ of 5 MHz for 6 stage configuration.
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Submitted 4 April, 2017;
originally announced April 2017.
