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Current-driven dynamics and ratchet effect of skyrmion bubbles in a ferrimagnetic insulator
Authors:
Saül Vélez,
Sandra Ruiz-Gómez,
Jakob Schaab,
Elzbieta Gradauskaite,
Martin S. Wörnle,
Pol Welter,
Benjamin J. Jacot,
Christian L. Degen,
Morgan Trassin,
Manfred Fiebig,
Pietro Gambardella
Abstract:
Magnetic skyrmions are compact chiral spin textures that exhibit a rich variety of topological phenomena and hold potential for developing high-density memory devices and novel computing schemes driven by spin currents. Here, we demonstrate room temperature interfacial stabilization and current-driven control of skyrmion bubbles in the ferrimagnetic insulator Tm3Fe5O12 (TmIG) coupled to Pt. We tra…
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Magnetic skyrmions are compact chiral spin textures that exhibit a rich variety of topological phenomena and hold potential for developing high-density memory devices and novel computing schemes driven by spin currents. Here, we demonstrate room temperature interfacial stabilization and current-driven control of skyrmion bubbles in the ferrimagnetic insulator Tm3Fe5O12 (TmIG) coupled to Pt. We track the current-induced motion of individual skyrmion bubbles. The ferrimagnetic order of the crystal together with the interplay of spin-orbit torques and pinning determine the skyrmion dynamics in TmIG and result in a strong skyrmion Hall effect characterized by a negative deflection angle and hopping motion. Further, we show that the velocity and depinning threshold of the skyrmion bubbles can be modified by exchange coupling TmIG to an in-plane magnetized Y3Fe5O12 layer, which distorts the spin texture of the skyrmions and leads to a directional-dependent rectification of their dynamics. This effect, which is equivalent to a magnetic ratchet, is exploited to control the skyrmion flow in a racetrack-like device.
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Submitted 19 January, 2023;
originally announced January 2023.
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Control of field- and current-driven magnetic domain wall motion by exchange-bias in Cr2O3/Co/Pt trilayers
Authors:
B. J. Jacot,
S. Vèlez,
P. Noël,
P. Helbingk,
F. Binda,
C. -H. Lambert,
P. Gambardella
Abstract:
We investigate the motion of magnetic domain walls driven by magnetic fields and current-driven spin-orbit torques in an exchange-biased system with perpendicular magnetization. We consider Cr2O3/Co/Pt trilayers as model system, in which the magnetization of the Co layer can be exchanged-biased out-of-plane or in-plane depending on the field cooling direction. In field-driven experiments, the in-p…
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We investigate the motion of magnetic domain walls driven by magnetic fields and current-driven spin-orbit torques in an exchange-biased system with perpendicular magnetization. We consider Cr2O3/Co/Pt trilayers as model system, in which the magnetization of the Co layer can be exchanged-biased out-of-plane or in-plane depending on the field cooling direction. In field-driven experiments, the in-plane exchange bias favors the propagation of the domain walls with internal magnetization parallel to the exchange bias field. In current-driven experiments, the domain walls propagate along the current direction, but the domain wall velocity increases and decreases symmetrically (anti-symmetrically) for both current polarities when the exchange bias is parallel (perpendicular) to the current line. At zero external field, the exchange bias modifies the velocity of current-driven domain wall motion by a factor of ten. We also find that the exchange bias remains stable under external fields up to 15 kOe and ns-long current pulses with current density up to 3.5x10^12 A/m^2. Our results demonstrate versatile control of the domain wall motion by exchange bias, which is relevant to achieve field-free switching of the magnetization in perpendicular systems and current-driven manipulation of domain walls velocity in spintronic devices.
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Submitted 19 October, 2022; v1 submitted 7 July, 2022;
originally announced July 2022.
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Systematic study of nonmagnetic resistance changes due to electrical pulsing in single metal layers and metal/antiferromagnet bilayers
Authors:
B. J. Jacot,
G. Krishnaswamy,
G. Sala,
C. O. Avci,
S. Vélez,
P. Gambardella,
C. -H. Lambert
Abstract:
Intense current pulses are often required to operate microelectronic and spintronic devices. Notably, strong current pulses have been shown to induce magnetoresistance changes attributed to domain reorientation in antiferromagnet/heavy metal bilayers and non-centrosymmetric antiferromagnets. In such cases, nonmagnetic resistivity changes may dominate over signatures of antiferromagnetic switching.…
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Intense current pulses are often required to operate microelectronic and spintronic devices. Notably, strong current pulses have been shown to induce magnetoresistance changes attributed to domain reorientation in antiferromagnet/heavy metal bilayers and non-centrosymmetric antiferromagnets. In such cases, nonmagnetic resistivity changes may dominate over signatures of antiferromagnetic switching. We report systematic measurements of the current-induced changes of the transverse and longitudinal resistance of Pt and Pt/NiO layers deposited on insulating substrates, namely Si/SiO$_2$, Si/Si$_3$N$_4$, and Al$_2$O$_3$. We identify the range of pulse amplitude and length that can be used without affecting the resistance and show that it increases with the device size and thermal diffusivity of the substrate. No significant difference is observed in the resistive response of Pt and NiO/Pt devices, thus precluding evidence on the switching of antiferromagnetic domains in NiO. The variation of the transverse resistance is associated to a thermally-activated process in Pt that decays following a double exponential law with characteristic timescales of a few minutes to hours. We use a Wheatstone bridge model to discriminate between positive and negative resistance changes, highlighting competing annealing and electromigration effects. Depending on the training of the devices, the transverse resistance can either increase or decrease between current pulses. Further, we elucidate the origin of the nonmonotonic resistance baseline, which we attribute to training effects combined with the asymmetric distribution of the current. These results provide insight into the origin of current-induced resistance changes in metal layers and a guide to minimize nonmagnetic artifacts in switching experiments of antiferromagnets.
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Submitted 26 November, 2020;
originally announced November 2020.
