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SIESTA: recent developments and applications
Authors:
Alberto García,
Nick Papior,
Arsalan Akhtar,
Emilio Artacho,
Volker Blum,
Emanuele Bosoni,
Pedro Brandimarte,
Mads Brandbyge,
J. I. Cerdá,
Fabiano Corsetti,
Ramón Cuadrado,
Vladimir Dikan,
Jaime Ferrer,
Julian Gale,
Pablo García-Fernández,
V. M. García-Suárez,
Sandra García,
Georg Huhs,
Sergio Illera,
Richard Korytár,
Peter Koval,
Irina Lebedeva,
Lin Lin,
Pablo López-Tarifa,
Sara G. Mayo
, et al. (11 additional authors not shown)
Abstract:
A review of the present status, recent enhancements, and applicability of the SIESTA program is presented. Since its debut in the mid-nineties, SIESTA's flexibility, efficiency and free distribution has given advanced materials simulation capabilities to many groups worldwide. The core methodological scheme of SIESTA combines finite-support pseudo-atomic orbitals as basis sets, norm-conserving pse…
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A review of the present status, recent enhancements, and applicability of the SIESTA program is presented. Since its debut in the mid-nineties, SIESTA's flexibility, efficiency and free distribution has given advanced materials simulation capabilities to many groups worldwide. The core methodological scheme of SIESTA combines finite-support pseudo-atomic orbitals as basis sets, norm-conserving pseudopotentials, and a real-space grid for the representation of charge density and potentials and the computation of their associated matrix elements. Here we describe the more recent implementations on top of that core scheme, which include: full spin-orbit interaction, non-repeated and multiple-contact ballistic electron transport, DFT+U and hybrid functionals, time-dependent DFT, novel reduced-scaling solvers, density-functional perturbation theory, efficient Van der Waals non-local density functionals, and enhanced molecular-dynamics options. In addition, a substantial effort has been made in enhancing interoperability and interfacing with other codes and utilities, such as Wannier90 and the second-principles modelling it can be used for, an AiiDA plugin for workflow automatization, interface to Lua for steering SIESTA runs, and various postprocessing utilities. SIESTA has also been engaged in the Electronic Structure Library effort from its inception, which has allowed the sharing of various low level libraries, as well as data standards and support for them, in particular the PSML definition and library for transferable pseudopotentials, and the interface to the ELSI library of solvers. Code sharing is made easier by the new open-source licensing model of the program. This review also presents examples of application of the capabilities of the code, as well as a view of on-going and future developments.
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Submitted 1 June, 2020;
originally announced June 2020.
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Energetics and carrier transport in doped Si/SiO2 quantum dots
Authors:
Nuria Garcia-Castello,
Sergio Illera,
Joan Daniel Prades,
Stefano Ossicini,
Albert Cirera,
Roberto Guerra
Abstract:
In the present theoretical work we have considered impurities, either boron or phosphorous, located at different substitutional sites in silicon quantum dots (Si-QDs) with diameters around 1.5\,nm, embedded in a SiO2 matrix. Formation energy calculations reveal that the most energetically-favored doping sites are inside the QD and at the Si/SiO2 interface for P and B impurities, respectively. Furt…
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In the present theoretical work we have considered impurities, either boron or phosphorous, located at different substitutional sites in silicon quantum dots (Si-QDs) with diameters around 1.5\,nm, embedded in a SiO2 matrix. Formation energy calculations reveal that the most energetically-favored doping sites are inside the QD and at the Si/SiO2 interface for P and B impurities, respectively. Furthermore, electron and hole transport calculations show in all the cases a strong reduction of the minimum voltage threshold, and a corresponding increase of the total current in the low-voltage regime. At higher voltage, our findings indicate a significant increase of transport only for P-doped Si-QDs, while the electrical response of B-doped ones does not stray from the undoped case. These findings are of support for the employment of doped Si-QDs in a wide range of applications, such as Si-based photonics or photovoltaic solar cells.
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Submitted 1 December, 2015;
originally announced December 2015.
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A compact theoretical model for opto-electronic devices based on quantum dot arrays
Authors:
S. Illera,
J. D. Prades,
A. Cirera
Abstract:
We present a theoretical model describing the photo-electrical response of a system composed of quantum dots embedded in a dielectric matrix. The model is based on the non-coherent rate equations and the Transfer Hamiltonian formalism. The self charge was included. Within this methodology, the response of the system only depends on fundamental material parameters and its geometry. Transport throug…
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We present a theoretical model describing the photo-electrical response of a system composed of quantum dots embedded in a dielectric matrix. The model is based on the non-coherent rate equations and the Transfer Hamiltonian formalism. The self charge was included. Within this methodology, the response of the system only depends on fundamental material parameters and its geometry. Transport through several quantum dot configurations was simulated obtaining current-voltage curves in dark and illuminating conditions for three different scenarios: single one quantum dot and two quantum dots in parallel and serial configurations. Despite the simplicity of the model, it has been used to reproduce successfully experimental results.
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Submitted 24 February, 2014; v1 submitted 15 May, 2013;
originally announced May 2013.
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A Transfer Hamiltonian model for devices based in quantum dot arrays
Authors:
S. Illera,
J. D. Prades,
A. Cirera,
A. Cornet
Abstract:
We present a model of electron transport through a random distribution of interacting quantum dots embedded in a dielectric matrix to simulate realistic devices. The method underlying the model depends only on fundamental parameters of the system and it is based on the Transfer Hamiltonian approach. A set of non-coherent rate equations can be written and the interaction between the quantum dots an…
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We present a model of electron transport through a random distribution of interacting quantum dots embedded in a dielectric matrix to simulate realistic devices. The method underlying the model depends only on fundamental parameters of the system and it is based on the Transfer Hamiltonian approach. A set of non-coherent rate equations can be written and the interaction between the quantum dots and between the quantum dots and the electrodes are introduced by transition rates and capacitive couplings. A realistic modelization of the capacitive couplings, the transmission coefficients, the electron/hole tunneling currents and the density of states of each quantum dot have been taken into account. The effects of the local potential are computed within the self-consistent field regime.
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Submitted 23 July, 2012;
originally announced July 2012.
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A Transfer Hamiltonian approach in self-consistent field regime for transport in arbitrary quantum dot arrays
Authors:
S. Illera,
N. Garcia-Castello,
J. D. Prades,
A. Cirera
Abstract:
A transport methodology to study the electron transport between quantum dots arrays based in Transfer Hamiltonian approach is presented. The interactions between the quantum dots and between the quantum dots and the electrodes are introduced by transition rates and capacitive couplings. The effects of the local potential are computed within the self-consistent field regime. The model has been deve…
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A transport methodology to study the electron transport between quantum dots arrays based in Transfer Hamiltonian approach is presented. The interactions between the quantum dots and between the quantum dots and the electrodes are introduced by transition rates and capacitive couplings. The effects of the local potential are computed within the self-consistent field regime. The model has been developed and expressed in a matrix form in order to make it extendable to larger systems. Transport through several quantum dot configurations have been studied in order to validate the model. Despite the simplicity of the model, well-known effects are satisfactorily reproduced and explained. The results qualitatively agree with other results obtained using more complex theoretical approaches.
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Submitted 8 May, 2012;
originally announced May 2012.
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Non-coherent transport in serial/parallel quantum dots in self-consistent field regime
Authors:
S. Illera,
A. Cirera
Abstract:
In this paper we introduce a simple phenomenological model of the conduction between a couple of serial or parallel quantum dots. This model is extended to arbitrary of number and to a square array of quantum dots. The local potential is computed taking into account the net charge at the quantum dot. Master equation are presented for total current and charge number N taking considering both the lo…
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In this paper we introduce a simple phenomenological model of the conduction between a couple of serial or parallel quantum dots. This model is extended to arbitrary of number and to a square array of quantum dots. The local potential is computed taking into account the net charge at the quantum dot. Master equation are presented for total current and charge number N taking considering both the local potential and the local current. Interesting results are reported, namely the Negative Differential Resistance for serial quantum dots as well as resonant conductance. A paradoxical asymmetric current appears for the parallel case due to the capacitive coupling.
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Submitted 13 April, 2011; v1 submitted 9 December, 2010;
originally announced December 2010.
