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Flux qubit-based detector of microwave photons
Authors:
O. A. Ilinskaya,
A. I. Ryzhov,
S. N. Shevchenko
Abstract:
A theory of detection of microwave photons with a flux qubit-based detector is presented. We consider semiclassical approximation with the electromagnetic field being in a coherent state. Flux qubit is considered as a multilevel quantum system (qudit). By solving the Lindblad equation, we describe the time evolution of occupations of the qudit's levels for readout and reset stages of detection. Wh…
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A theory of detection of microwave photons with a flux qubit-based detector is presented. We consider semiclassical approximation with the electromagnetic field being in a coherent state. Flux qubit is considered as a multilevel quantum system (qudit). By solving the Lindblad equation, we describe the time evolution of occupations of the qudit's levels for readout and reset stages of detection. When considering the reset stage, the time evolution is described by multiple avoided-level crossings, thus providing a multilevel Landau-Zener-Stuckelberg-Majorana (LZSM) problem. In addition to numerical calculations, we present an approximate solution for the description of the reset stage dynamics based on the adiabatic-impulse approximation and rate equation approach. Our theory may be useful for the theoretical description of driven-dissipative dynamics of qudits, including applications such as single-photon detection.
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Submitted 18 October, 2024; v1 submitted 12 February, 2024;
originally announced February 2024.
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Nonlinear Landau-Zener-Stückelberg-Majorana problem
Authors:
Sahel Ashhab,
Olga A. Ilinskaya,
Sergey N. Shevchenko
Abstract:
In the standard Landau-Zener-Stückelberg-Majorana (LZSM) problem, the bias sweep rate and gap are both time independent and fully characterize the LZSM problem. We consider the nonlinear LZSM problem, in which at least one of the two characteristic parameters varies as the system traverses the avoided crossing region. This situation results in what could be thought of as a more accurate descriptio…
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In the standard Landau-Zener-Stückelberg-Majorana (LZSM) problem, the bias sweep rate and gap are both time independent and fully characterize the LZSM problem. We consider the nonlinear LZSM problem, in which at least one of the two characteristic parameters varies as the system traverses the avoided crossing region. This situation results in what could be thought of as a more accurate description of any realistic situation as compared to the idealized linear LZSM problem. We consider both the case of perturbative nonlinearities, where the nonlinearity adds small corrections to the linear problem, and the case of essential nonlinearities, where the sweep and/or minimum-gap functions are qualitatively different from those of the linear LZSM problem. In the case of perturbative nonlinearities, we derive analytic expressions for the LZSM transition probability based on the Dykhne-Davis-Pechukas (DDP) formula, taking into account the leading corrections to the standard LZSM formula. We compare the derived approximate expressions with numerical simulation results and comment on the validity of the approximations. In particular, if the nonlinear term is small in comparison to the linear term throughout the finite duration of the avoided crossing traversal, the perturbative approximation is valid. Our results also provide information about the validity of the DDP formula. In addition to reviewing cases of essential nonlinearity treated previously in the literature, we analyze the case of an essentially nonlinear sweep function that describes an almost square pulse.
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Submitted 16 December, 2022; v1 submitted 24 August, 2022;
originally announced August 2022.
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Spin-Polaronic Effects in Electric Shuttling in a Single Molecule Transistor with Magnetic Leads
Authors:
Olya A. Ilinskaya,
Danko Radic,
Hee Chul Park,
Ilya V. Krive,
Robert I. Shekhter,
Mats Jonson
Abstract:
Current-voltage characteristics of a spintromechanical device, in which spin-polarized electrons tunnel between magnetic leads with anti-parallel magnetization through a single level movable quantum dot, are calculated. New exchange- and electromechanical coupling-induced (spin-polaronic) effects that determine strongly nonlinear current-voltage characteristics were found. In the low-voltage regim…
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Current-voltage characteristics of a spintromechanical device, in which spin-polarized electrons tunnel between magnetic leads with anti-parallel magnetization through a single level movable quantum dot, are calculated. New exchange- and electromechanical coupling-induced (spin-polaronic) effects that determine strongly nonlinear current-voltage characteristics were found. In the low-voltage regime of electron transport the voltage-dependent and exchange field-induced displacement of quantum dot towards the source electrode leads to nonmonotonic behavior of differential conductance that demonstrates the lifting of spin-polaronic effects by electric field. At high voltages the onset of electron shuttling results in the drop of current and negative differential conductance, caused by mechanically-induced increase of tunnel resistivities and exchange field-induced suppression of spin-flips in magnetic field. The dependence of these predicted spin effects on the oscillations frequency of the dot and the strength of electron-electron correlations is discussed.
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Submitted 2 March, 2020;
originally announced March 2020.
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Coulomb-promoted spintromechanics in magnetic shuttle devices
Authors:
Olya A. Ilinskaya,
Danko Radic,
Hee Chul Park,
Ilya V. Krive,
Robert I. Shekhter,
Mats Jonson
Abstract:
Exchange forces on the movable dot ("shuttle") in a magnetic shuttle device depend on the parity of the number of shuttling electrons. The performance of such a device can therefore be tuned by changing the strength $U$ of Coulomb correlations to block or unblock parity fluctuations. We show that by increasing $U$ the spintro-mechanics of the device crosses over, at $U=U_c(T)$, from a mechanically…
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Exchange forces on the movable dot ("shuttle") in a magnetic shuttle device depend on the parity of the number of shuttling electrons. The performance of such a device can therefore be tuned by changing the strength $U$ of Coulomb correlations to block or unblock parity fluctuations. We show that by increasing $U$ the spintro-mechanics of the device crosses over, at $U=U_c(T)$, from a mechanically stable regime to a regime of spin-induced shuttle instabilities. This is due to enhanced spin-dependent mechanical forces as parity fluctuations are reduced by a Coulomb blockade of tunneling and demonstrates that single-electron manipulation of single-spin controlled nano-mechanics is possible.
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Submitted 26 February, 2019; v1 submitted 24 February, 2019;
originally announced February 2019.
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Mechanically Induced Thermal Breakdown in Magnetic Shuttle Structures
Authors:
O. A. Ilinskaya,
S. I. Kulinich,
I. V. Krive,
R. I. Shekhter,
H. C. Park,
M. Jonson
Abstract:
A theory of a thermally induced single-electron "shuttling" instability in a magnetic nanomechanical device subject to an external magnetic field is presented in the Coulomb blockade regime of electron transport. The model magnetic shuttle device considered comprises a movable metallic grain suspended between two magnetic leads, which are kept at different temperatures and assumed to be fully spin…
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A theory of a thermally induced single-electron "shuttling" instability in a magnetic nanomechanical device subject to an external magnetic field is presented in the Coulomb blockade regime of electron transport. The model magnetic shuttle device considered comprises a movable metallic grain suspended between two magnetic leads, which are kept at different temperatures and assumed to be fully spin polarized with antiparallel magnetizations. For a given temperature difference shuttling is found to occur for a region of external magnetic fields between a lower and an upper critical field strength, which separate the shuttling regime from normal small-amplitude "vibronic" regimes. We find that (i) the upper critical magnetic field saturates to a constant value in the high temperature limit and that the shuttle instability domain expands with a decrease of the temperature, (ii) the lower critical magnetic field depends not only on the temperature independent phenomenological friction coefficient used in the model but also on intrinsic friction (which vanishes in the high temperature limit) caused by magnetic exchange forces and electron tunneling between the quantum dot and the leads. The feasibility of using thermally driven magnetic shuttle systems to harvest thermal breakdown phenomena is discussed.
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Submitted 2 June, 2018;
originally announced June 2018.
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Shuttling of Spin Polarized Electrons in Molecular Transistors
Authors:
O. A. Ilinskaya,
S. I. Kulinich,
I. V. Krive,
R. I. Shekhter,
Y. W. Park,
M. Jonson
Abstract:
Shuttling of electrons in single-molecule transistors with magnetic leads in the presence of an external magnetic field is considered theoretically. For a current of partially spin-polarized electrons a shuttle instability is predicted to occur for a finite interval of external magnetic field strengths. The lower critical magnetic field is determined by the degree of spin polarization and it vanis…
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Shuttling of electrons in single-molecule transistors with magnetic leads in the presence of an external magnetic field is considered theoretically. For a current of partially spin-polarized electrons a shuttle instability is predicted to occur for a finite interval of external magnetic field strengths. The lower critical magnetic field is determined by the degree of spin polarization and it vanishes as the spin polarization approaches 100%. The feasibility of detecting magnetic shuttling in a $C_{60}$-based molecular transistor with magnetic (Ni) electrodes is discussed [A.~N.~Pasupathy et al., Science 306, 86 (2004)].
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Submitted 21 July, 2015;
originally announced July 2015.
