Showing 1–1 of 1 results for author: Iannazzo, M
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Enhanced intrinsic voltage gain in artificially stacked bilayer CVD graphene field effect transistors
Authors:
Himadri Pandey,
Jorge Daniel Aguirre Morales,
Satender Kataria,
Sebastien Fregonese,
Vikram Passi,
Mario Iannazzo,
Thomas Zimmer,
Eduard Alarcon,
Max C. Lemme
Abstract:
We report on electronic transport in dual-gate, artificially stacked bilayer graphene field effect transistors (BiGFETs) fabricated from large-area chemical vapor deposited (CVD) graphene. The devices show enhanced tendency to current saturation, which leads to reduced minimum output conductance values. This results in improved intrinsic voltage gain of the devices when compared to monolayer graph…
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We report on electronic transport in dual-gate, artificially stacked bilayer graphene field effect transistors (BiGFETs) fabricated from large-area chemical vapor deposited (CVD) graphene. The devices show enhanced tendency to current saturation, which leads to reduced minimum output conductance values. This results in improved intrinsic voltage gain of the devices when compared to monolayer graphene FETs. We employ a physics based compact model originally developed for Bernal stacked bilayer graphene FETs (BSBGFETs) to explore the observed phenomenon. The improvement in current saturation may be attributed to increased charge carrier density in the channel and thus reduced saturation velocity due to carrier-carrier scattering.
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Submitted 4 December, 2022;
originally announced December 2022.
