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In beam performances of the MIMOSIS-2.1 CMOS Monolithic Active Pixel Sensor
Authors:
M. Deveaux,
Ali-Murteza Altingun,
Julio Andary,
Benedict Arnoldi-Meadows,
Jerome Baudot,
Gregory Bertolone,
Auguste Besson,
Norbert Bialas,
Christopher Braun,
Roma Bugiel,
Gilles Claus,
Claude Colledani,
Hasan Darwish,
Andrei Dorokhov,
Guy Dozière,
Ziad El Bitar,
Ingo Fröhlich,
Mathieu Goffe,
Benedikt Gutsche,
Abdelkader Himmi,
Christine Hu-Guo,
Kimmo Jaaskelainen,
Oliver Keller,
Michal Koziel,
Franz Matejcek
, et al. (13 additional authors not shown)
Abstract:
MIMOSIS is a CMOS Monolithic Active Pixel Sensor developed to equip the Micro Vertex Detector of the Compressed Baryonic Matter (CBM) experiment at FAIR/GSI. The sensor will combine an excellent spatial precision of $5~μm$ with a time resolution of $5~μs$ and provide a peak hit rate capability of $\mathrm{\sim 80~ MHz/cm^2}$. To fulfill its task, MIMOSIS will have to withstand ionising radiation d…
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MIMOSIS is a CMOS Monolithic Active Pixel Sensor developed to equip the Micro Vertex Detector of the Compressed Baryonic Matter (CBM) experiment at FAIR/GSI. The sensor will combine an excellent spatial precision of $5~μm$ with a time resolution of $5~μs$ and provide a peak hit rate capability of $\mathrm{\sim 80~ MHz/cm^2}$. To fulfill its task, MIMOSIS will have to withstand ionising radiation doses of $\sim 5~ \mathrm{MRad}$ and fluences of $\sim 7 \times 10^{13}~\mathrm{n_{eq}/cm^2}$ per year of operation.
This paper introduces the reticle size full feature sensor prototype MIMOSIS-2.1, which was improved with respect to earlier prototypes by adding on-chip grouping circuts and by improving the analog power grid. Moreover, it features for a first time a $50~μm$ epitaxial layer, which is found to improve the performances of the non-irradiated device significantly. We discuss the in beam sensor performances as measured during beam tests at the CERN-SPS.
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Submitted 7 February, 2025;
originally announced February 2025.
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Integration Concept of the CBM Micro Vertex Detector
Authors:
Franz Matejcek,
Ali-Murteza Altingun,
Julio Andary,
Benedict Arnoldi-Meadows,
Jerome Baudot,
Gregory Bertolone,
Auguste Besson,
Norbert Bialas,
Christopher Braun,
Roma Bugiel,
Gilles Claus,
Claude Colledani,
Hasan Darwish,
Michael Deveaux,
Andrei Dorokhov,
Guy Dozière,
Ziad El Bitar,
Ingo Fröhlich,
Mathieu Goffe,
Benedikt Gutsche,
Abdelkader Himmi,
Christine Hu-Guo,
Kimmo Jaaskelainen,
Oliver Keller,
Michal Koziel
, et al. (13 additional authors not shown)
Abstract:
The Micro Vertex Detector (MVD) is the most upstream detector of the fixed-target Compressed Baryonic Matter Experiment (CBM) at the future Facility for Antiproton and Ion Research (FAIR). It enables high-precision low-momentum tracking in direct proximity of the target. Reaching the stringent requirements for the MVD, a material budget of~$0.3\,-\,0.5\%\,X_0$ per layer, operating the dedicated CM…
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The Micro Vertex Detector (MVD) is the most upstream detector of the fixed-target Compressed Baryonic Matter Experiment (CBM) at the future Facility for Antiproton and Ion Research (FAIR). It enables high-precision low-momentum tracking in direct proximity of the target. Reaching the stringent requirements for the MVD, a material budget of~$0.3\,-\,0.5\%\,X_0$ per layer, operating the dedicated CMOS MAPS~(`MIMOSIS') in the target vacuum, the strong magnetic dipole field, and a harsh radiation environment~(5\,Mrad, $7\times10^{13}\,n_{\text{eq}}/\text{cm}^2$ per CBM year), poses an unprecedented integration challenge. In this paper, the integration concept of the detector is be outlined, elaborating on the selection and preparation of materials, assembly procedures, and quality assessment steps in the ongoing preparation of pre-series production and detector commissioning in 2028.
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Submitted 7 February, 2025;
originally announced February 2025.
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Performance studies of the CE-65v2 MAPS prototype structure
Authors:
A. Ilg,
A. Lorenzetti,
H. Baba,
J. Baudot,
A. Besson,
S. Bugiel,
T. Chujo,
C. Colledani,
A. Dorokhov,
Z. El Bitar,
M. Goffe,
T. Gunji,
C. Hu-Guo,
K. Jaaskelainen,
T. Katsuno,
A. Kluge,
A. Kostina,
A. Kumar,
A. Macchiolo,
M. Mager,
J. Park,
E. Ploerer,
S. Sakai,
S. Senyukov,
H. Shamas
, et al. (8 additional authors not shown)
Abstract:
With the next upgrade of the ALICE inner tracking system (ITS3) as its primary focus, a set of small MAPS test structures have been developed in the 65 nm TPSCo CMOS process. The CE-65 focuses on the characterisation of the analogue charge collection properties of this technology. The latest iteration, the CE-65v2, was produced in different processes (standard, with a low-dose n-type blanket, and…
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With the next upgrade of the ALICE inner tracking system (ITS3) as its primary focus, a set of small MAPS test structures have been developed in the 65 nm TPSCo CMOS process. The CE-65 focuses on the characterisation of the analogue charge collection properties of this technology. The latest iteration, the CE-65v2, was produced in different processes (standard, with a low-dose n-type blanket, and blanket with gap between pixels), pixel pitches (15, 18, 22.5 $μ$m), and pixel arrangements (square or staggered). The comparatively large pixel array size of $48\times24$ pixels in CE-65v2 allows the uniformity of the pixel response to be studied, among other benefits.
The CE-65v2 chip was characterised in a test beam at the CERN SPS. A first analysis showed that hit efficiencies of $\geq 99\%$ and spatial resolution better than 5 $μ$m can be achieved for all pitches and process variants. For the standard process, thanks to larger charge sharing, even spatial resolutions below 3 $μ$m are reached, in line with vertex detector requirements for the FCC-ee.
This contribution further investigates the data collected at the SPS test beam. Thanks to the large sensor size and efficient data collection, a large amount of statistics was collected, which allows for detailed in-pixel studies to see the efficiency and spatial resolution as a function of the hit position within the pixels. Again, different pitches and process variants are compared.
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Submitted 24 February, 2025; v1 submitted 6 February, 2025;
originally announced February 2025.
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Characterisation of analogue MAPS produced in the 65 nm TPSCo process
Authors:
Eduardo Ploerer,
Hitoshi Baba,
Jerome Baudot,
Auguste Besson,
Szymon Bugiel,
Tatsuya Chujo,
Claude Colledani,
Andrei Dorokhov,
Ziad El Bitar,
Mathieu Goffe,
Taku Gunji,
Christine Hu-Guo,
Armin Ilg,
Kimmo Jaaskelainen,
Towa Katsuno,
Alexander Kluge,
Anhelina Kostina,
Ajit Kumar,
Alessandra Lorenzetti,
Anna Macchiolo,
Magnus Mager,
Jonghan Park,
Shingo Sakai,
Serhiy Senyukov,
Hasan Shamas
, et al. (9 additional authors not shown)
Abstract:
Within the context of the ALICE ITS3 collaboration, a set of MAPS small-scale test structures were developed using the 65 nm TPSCo CMOS imaging process with the upgrade of the ALICE inner tracking system as its primary focus. One such sensor, the Circuit Exploratoire 65 nm (CE-65), and its evolution the CE-65v2, were developed to explore charge collection properties for varying configurations incl…
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Within the context of the ALICE ITS3 collaboration, a set of MAPS small-scale test structures were developed using the 65 nm TPSCo CMOS imaging process with the upgrade of the ALICE inner tracking system as its primary focus. One such sensor, the Circuit Exploratoire 65 nm (CE-65), and its evolution the CE-65v2, were developed to explore charge collection properties for varying configurations including collection layer process (standard, blanket, modified with gap), pixel pitch (15, 18, \SI{22.5}{\micro\meter}), and pixel geometry (square vs hexagonal/staggered). In this work the characterisation of the CE-65v2 chip, based on $^{55}$Fe lab measurements and test beams at CERN SPS, is presented. Matrix gain uniformity up to the $\mathcal{O}$(5\%) level was demonstrated for all considered chip configurations. The CE-65v2 chip achieves a spatial resolution of under \SI{2}{\micro\meter} during beam tests. Process modifications allowing for faster charge collection and less charge sharing result in decreased spatial resolution, but a considerably wider range of operation, with both the \SI{15}{\micro\meter} and \SI{22.5}{\micro\meter} chips achieving over 99\% efficiency up to a $\sim$180 e$^{-}$ seed threshold. The results serve to validate the 65 nm TPSCo CMOS process, as well as to motivate design choices in future particle detection experiments.
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Submitted 13 November, 2024;
originally announced November 2024.
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The Belle II Detector Upgrades Framework Conceptual Design Report
Authors:
H. Aihara,
A. Aloisio,
D. P. Auguste,
M. Aversano,
M. Babeluk,
S. Bahinipati,
Sw. Banerjee,
M. Barbero,
J. Baudot,
A. Beaubien,
F. Becherer,
T. Bergauer,
F. U. Bernlochner.,
V. Bertacchi,
G. Bertolone,
C. Bespin,
M. Bessner,
S. Bettarini,
A. J. Bevan,
B. Bhuyan,
M. Bona,
J. F. Bonis,
J. Borah,
F. Bosi,
R. Boudagga
, et al. (186 additional authors not shown)
Abstract:
We describe the planned near-term and potential longer-term upgrades of the Belle II detector at the SuperKEKB electron-positron collider operating at the KEK laboratory in Tsukuba, Japan. These upgrades will allow increasingly sensitive searches for possible new physics beyond the Standard Model in flavor, tau, electroweak and dark sector physics that are both complementary to and competitive wit…
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We describe the planned near-term and potential longer-term upgrades of the Belle II detector at the SuperKEKB electron-positron collider operating at the KEK laboratory in Tsukuba, Japan. These upgrades will allow increasingly sensitive searches for possible new physics beyond the Standard Model in flavor, tau, electroweak and dark sector physics that are both complementary to and competitive with the LHC and other experiments.
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Submitted 4 July, 2024; v1 submitted 26 June, 2024;
originally announced June 2024.
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CMOS pixel sensors optimized for large ionizing dynamic
Authors:
W. Ren,
J. Baudot,
L. Federici,
C. Finck,
C. Hu-Guo,
M. Kachel,
C. -A. Reidel,
C. Schui,
R. Sefri,
E. Spiriti,
U. Weber,
Y. Zhao
Abstract:
Monolithic active pixel sensors (MAPS) are now well established as a technology for tracking charged particles, especially when low material budget is desirable. For such applications, sensors focus on spatial resolution and pixels with digital output or modest charge measurement ability are well suited. Within the European Union STRONG-2020 project, which focuses on experiments using hadrons, the…
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Monolithic active pixel sensors (MAPS) are now well established as a technology for tracking charged particles, especially when low material budget is desirable. For such applications, sensors focus on spatial resolution and pixels with digital output or modest charge measurement ability are well suited. Within the European Union STRONG-2020 project, which focuses on experiments using hadrons, the TIIMM (Tracking and Ions Identifications with Minimal Material budget) joint research activity intends to expand granular MAPS capacity to energy-loss (ΔE) measurement for ion species identification. The TIIMM prototypes are developed in the Tower Jazz 180 nm CMOS image sensor (CIS) process. The Time-Over-Threshold (ToT) method is applied to the sensor for the energy-loss measurement. The main design details and the preliminary test results from laboratory measurements of the initial TIIMM prototype are presented in this work.
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Submitted 24 January, 2022;
originally announced January 2022.
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Development and Characterization of a 3.2 Gb/s Serial Link Transmitter for CMOS Image Sensors in Subatomic Physics Experiments
Authors:
Quan Sun,
Guangyu Zhang,
Datao Gong,
Binwei Deng,
Wei Zhou,
Bihui You,
Le Xiao,
Jian Wang,
Dongxu Yang,
Tiankuan Liu,
Chonghan Liu,
Di Guo,
Jun Liu,
Christine Hu-Guo,
Frederic Morel,
Isabelle Valin,
Xiangming Sun,
Jingbo Ye
Abstract:
This paper presents development and characterization of a 3.2 Gb/s serial link transmitter for CMOS image sensors. The transmitter incorporates Reed-Solomon code to achieve low error rate in the harsh environment of subatomic physics experiments. Pre-emphasis is implemented in the transmitter, allowing data transmission over low-mass cables. It is fabricated in a 0.18 $μm$ CMOS image process as a…
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This paper presents development and characterization of a 3.2 Gb/s serial link transmitter for CMOS image sensors. The transmitter incorporates Reed-Solomon code to achieve low error rate in the harsh environment of subatomic physics experiments. Pre-emphasis is implemented in the transmitter, allowing data transmission over low-mass cables. It is fabricated in a 0.18 $μm$ CMOS image process as a standalone chip to characterize its performance, with the core area of 1.8 $mm^2$. A frame data rate of $3\cdot10^{-12}$ with a confidence level of 94.5$\%$ was measured through an FPGA based receiver. The measured nominal power consumption is 135 mW. The transmitter functions normally after irradiated with 4.5 Mrad TID.
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Submitted 18 June, 2018;
originally announced June 2018.
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Optimisation of CMOS pixel sensors for high performance vertexing and tracking
Authors:
Jerome Baudot,
Auguste Besson,
Gilles Claus,
Wojciech Dulinski,
Andrei Dorokhov,
Mathieu Goffe,
Christine Hu-Guo,
Levente Molnar,
Xitzel Sanchez-Castro,
Serhyi Senyukov,
Marc Winter
Abstract:
CMOS Pixel Sensors tend to become relevant for a growing spectrum of charged particle detection instruments. This comes mainly from their high granularity and low material budget. However, several potential applications require a higher read-out speed and radiation tolerance than those achieved with available devices based on a 0.35 micrometers feature size technology. This paper shows preliminary…
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CMOS Pixel Sensors tend to become relevant for a growing spectrum of charged particle detection instruments. This comes mainly from their high granularity and low material budget. However, several potential applications require a higher read-out speed and radiation tolerance than those achieved with available devices based on a 0.35 micrometers feature size technology. This paper shows preliminary test results of new prototype sensors manufactured in a 0.18 micrometers process based on a high resistivity epitaxial layer of sizeable thickness. Grounded on these observed performances, we discuss a development strategy over the coming years to reach a full scale sensor matching the specifications of the upgraded version of the Inner Tracking System (ITS) of the ALICE experiment at CERN, for which a sensitive area of up to about 10 square meters may be equipped with pixel sensors.
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Submitted 3 May, 2013; v1 submitted 2 May, 2013;
originally announced May 2013.
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Charged particle detection performances of CMOS pixel sensors produced in a 0.18 um process with a high resistivity epitaxial layer
Authors:
Serhiy Senyukov,
Jerome Baudot,
Auguste Besson,
Gilles Claus,
Loic Cousin,
Andrei Dorokhov,
Wojciech Dulinski,
Mathieu Goffe,
Christine Hu-Guo,
Marc Winter
Abstract:
The apparatus of the ALICE experiment at CERN will be upgraded in 2017/18 during the second long shutdown of the LHC (LS2). A major motivation for this upgrade is to extend the physics reach for charmed and beauty particles down to low transverse momenta. This requires a substantial improvement of the spatial resolution and the data rate capability of the ALICE Inner Tracking System (ITS). To achi…
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The apparatus of the ALICE experiment at CERN will be upgraded in 2017/18 during the second long shutdown of the LHC (LS2). A major motivation for this upgrade is to extend the physics reach for charmed and beauty particles down to low transverse momenta. This requires a substantial improvement of the spatial resolution and the data rate capability of the ALICE Inner Tracking System (ITS). To achieve this goal, the new ITS will be equipped with 50 um thin CMOS Pixel Sensors (CPS) covering either the 3 innermost layers or all the 7 layers of the detector. The CPS being developed for the ITS upgrade at IPHC (Strasbourg) is derived from the MIMOSA 28 sensor realised for the STAR-PXL at RHIC in a 0.35 um CMOS process. In order to satisfy the ITS upgrade requirements in terms of readout speed and radiation tolerance, a CMOS process with a reduced feature size and a high resistivity epitaxial layer should be exploited. In this respect, the charged particle detection performance and radiation hardness of the TowerJazz 0.18 um CMOS process were studied with the help of the first prototype chip MIMOSA 32. The beam tests performed with negative pions of 120 GeV/c at the CERN-SPS allowed to measure a signal-to-noise ratio (SNR) for the non-irradiated chip in the range between 22 and 32 depending on the pixel design. The chip irradiated with the combined dose of 1 MRad and 10^13 n_eq/cm^2 was observed to yield a SNR ranging between 11 and 23 for coolant temperatures varying from 15 C to 30 C. These SNR values were measured to result in particle detection efficiencies above 99.5% and 98% before and after irradiation respectively. These satisfactory results allow to validate the TowerJazz 0.18 um CMOS process for the ALICE ITS upgrade.
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Submitted 7 March, 2013; v1 submitted 3 January, 2013;
originally announced January 2013.
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Development of CMOS Pixel Sensors fully adapted to the ILD Vertex Detector Requirements
Authors:
Marc Winter,
Jerome Baudot,
Auguste Besson,
Gilles Claus,
Andrei Dorokhov,
Mathieu Goffe,
Christine Hu-Guo,
Frederic Morel,
Isabelle Valin,
Georgios Voutsinas,
Liang Zhang
Abstract:
CMOS Pixel Sensors are making steady progress towards the specifications of the ILD vertex detector. Recent developments are summarised, which show that these devices are close to comply with all major requirements, in particular the read-out speed needed to cope with the beam related background. This achievement is grounded on the double- sided ladder concept, which allows combining signals gener…
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CMOS Pixel Sensors are making steady progress towards the specifications of the ILD vertex detector. Recent developments are summarised, which show that these devices are close to comply with all major requirements, in particular the read-out speed needed to cope with the beam related background. This achievement is grounded on the double- sided ladder concept, which allows combining signals generated by a single particle in two different sensors, one devoted to spatial resolution and the other to time stamp, both assembled on the same mechanical support. The status of the development is overviewed as well as the plans to finalise it using an advanced CMOS process.
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Submitted 16 March, 2012;
originally announced March 2012.
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Development of Single- and Double-sided Ladders for the ILD Vertex Detectors
Authors:
Jerome Baudot,
Olena Bashinska,
Nathalie Chon-Sen,
Wojciech Dulinski,
Franziska Hegner,
Marie Gelin-Galibel,
Rhorry Gauld,
Mathieu Goffe,
Joel Goldstein,
Ingrid Gregor,
Christine Hu-Guo,
Ulrich Koetz,
Andrei Nomerotski,
Marc Winter
Abstract:
We discuss two projects exploring the integration of thin CMOS pixel sensors in order to prototype ladders matching the geometry needed for the ILD vertex detector. The PLUME project has designed and fabricated full-size and fully functional double- sided layers which currently reach 0.6 % X0 and aim for 0.3 % X0 in mid-2012. Another approach, SERNWIETE, consists in wrapping the sensors in a polyi…
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We discuss two projects exploring the integration of thin CMOS pixel sensors in order to prototype ladders matching the geometry needed for the ILD vertex detector. The PLUME project has designed and fabricated full-size and fully functional double- sided layers which currently reach 0.6 % X0 and aim for 0.3 % X0 in mid-2012. Another approach, SERNWIETE, consists in wrapping the sensors in a polyimide-based micro-cable to obtain a supportless single-sided ladder with a material budget around 0.15 % X0. First promising samples have been produced and the full-size prototype is expected in spring 2012.
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Submitted 23 March, 2012; v1 submitted 16 March, 2012;
originally announced March 2012.
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Infrastructure for Detector Research and Development towards the International Linear Collider
Authors:
J. Aguilar,
P. Ambalathankandy,
T. Fiutowski,
M. Idzik,
Sz. Kulis,
D. Przyborowski,
K. Swientek,
A. Bamberger,
M. Köhli,
M. Lupberger,
U. Renz,
M. Schumacher,
Andreas Zwerger,
A. Calderone,
D. G. Cussans,
H. F. Heath,
S. Mandry,
R. F. Page,
J. J. Velthuis,
D. Attié,
D. Calvet,
P. Colas,
X. Coppolani,
Y. Degerli,
E. Delagnes
, et al. (252 additional authors not shown)
Abstract:
The EUDET-project was launched to create an infrastructure for developing and testing new and advanced detector technologies to be used at a future linear collider. The aim was to make possible experimentation and analysis of data for institutes, which otherwise could not be realized due to lack of resources. The infrastructure comprised an analysis and software network, and instrumentation infras…
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The EUDET-project was launched to create an infrastructure for developing and testing new and advanced detector technologies to be used at a future linear collider. The aim was to make possible experimentation and analysis of data for institutes, which otherwise could not be realized due to lack of resources. The infrastructure comprised an analysis and software network, and instrumentation infrastructures for tracking detectors as well as for calorimetry.
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Submitted 23 January, 2012;
originally announced January 2012.
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Development of Fast and High Precision CMOS Pixel Sensors for an ILC Vertex Detector
Authors:
Christine Hu-Guo,
IPHC Collaboration,
IRFU Collaboration
Abstract:
The development of CMOS pixel sensors with column parallel read-out and integrated zero-suppression has resulted in a full size, nearly 1 Megapixel, prototype with ~100 μs read-out time. Its performances are quite close to the ILD vertex detector specifications, showing that the sensor architecture can presumably be evolved to meet these specifications exactly.
Starting from the existing archite…
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The development of CMOS pixel sensors with column parallel read-out and integrated zero-suppression has resulted in a full size, nearly 1 Megapixel, prototype with ~100 μs read-out time. Its performances are quite close to the ILD vertex detector specifications, showing that the sensor architecture can presumably be evolved to meet these specifications exactly.
Starting from the existing architecture and achieved performances, the paper will expose the details of how the sensor will be evolved in the coming 2-3 years in perspective of the ILD Detector Baseline Document, to be delivered in 2012. Two different devices are foreseen for this objective, one being optimized for the inner layers and their fast read-out requirement, while the other exploits the dimmed background in the outer layers to reduce the power consumption. The sensor evolution relies on a high resistivity epitaxial layer, on the use of an advanced CMOS process and on the combination of column-level ADCs with a pixel array. The paper will present how these aspects can be exploited to match the ILD VTX specifications.
A status of the development of 3D CMOS devices will be mentioned for completeness.
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Submitted 15 July, 2010;
originally announced July 2010.
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M.i.p. detection performances of a 100 us read-out CMOS pixel sensor with digitised outputs
Authors:
Marc Winter,
Jerome Baudot,
Auguste Besson,
Claude Colledani,
Yavuz Degerli,
Rita De Masi,
Andrei Dorokhov,
Guy Doziere,
Wojciech Dulinski,
Marie Gelin,
Fabrice Guilloux,
Abdelkader Himmi,
Christine Hu-Guo,
Frederic Morel,
Fabienne Orsini,
Isabelle Valin,
Georgios Voutsinas
Abstract:
Swift, high resolution CMOS pixel sensors are being developed for the ILC vertex detector, aiming to allow approaching the interaction point very closely. A major issue is the time resolution of the sensors needed to deal with the high occupancy generated by the beam related background. A 128x576 pixel sensor providing digitised outputs at a read-out time of 92.5 us, was fabricated in 2008 withi…
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Swift, high resolution CMOS pixel sensors are being developed for the ILC vertex detector, aiming to allow approaching the interaction point very closely. A major issue is the time resolution of the sensors needed to deal with the high occupancy generated by the beam related background. A 128x576 pixel sensor providing digitised outputs at a read-out time of 92.5 us, was fabricated in 2008 within the EU project EUDET, and tested with charged particles at the CERN-SPS. Its prominent performances in terms of noise, detection efficiency versus fake hit rate, spatial resolution and radiation tolerance are overviewed. They validate the sensor architecture.
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Submitted 16 February, 2009;
originally announced February 2009.
