Full Electroresistance Modulation in a Mixed-Phase Metallic Alloy
Authors:
Z. Q. Liu,
L. Li,
Z. Gai,
J. D. Clarkson,
S. L. Hsu,
A. T. Wong,
L. S. Fan,
M. -W. Lin,
C. M. Rouleau,
T. Z. Ward,
H. N. Lee,
A. S. Sefat,
H. M. Christen,
R. Ramesh
Abstract:
We report a giant, ~22%, electroresistance modulation for a metallic alloy above room temperature. It is achieved by a small electric field of 2 kV/cm via piezoelectric strain-mediated magnetoelectric coupling and the resulting magnetic phase transition in epitaxial FeRh/BaTiO3 heterostructures. This work presents detailed experimental evidence for an isothermal magnetic phase transition driven by…
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We report a giant, ~22%, electroresistance modulation for a metallic alloy above room temperature. It is achieved by a small electric field of 2 kV/cm via piezoelectric strain-mediated magnetoelectric coupling and the resulting magnetic phase transition in epitaxial FeRh/BaTiO3 heterostructures. This work presents detailed experimental evidence for an isothermal magnetic phase transition driven by tetragonality modulation in FeRh thin films, which is in contrast to the large volume expansion in the conventional temperature-driven magnetic phase transition in FeRh. Moreover, all the experimental results in this work illustrate FeRh as a mixed-phase model system well similar to phase-separated colossal magnetoresistance systems with phase instability therein.
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Submitted 14 February, 2017;
originally announced February 2017.
An invisible non-volatile solid-state memory
Authors:
J. Clarkson,
C. Frontera,
Z. Q. Liu,
Y. Lee,
J. Kim,
K. Cordero,
S. Wizotsky,
F. Sanchez,
J. Sort,
S. L. Hsu,
C Ko,
J. Wu,
H. M. Christen,
J. T. Heron,
D. G. Schlom,
S. Salahuddin,
L. Aballe,
M. Foerster,
N. Kioussis,
J. Fontcuberta,
I. Fina,
R. Ramesh,
X. Marti
Abstract:
Information technologies require entangling data stability with encryption for a next generation of secure data storage. Current magnetic memories, ranging from low-density stripes up to high-density hard drives, can ultimately be detected using routinely available probes or manipulated by external magnetic perturbations. Antiferromagnetic resistors feature unrivalled robustness but the stable res…
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Information technologies require entangling data stability with encryption for a next generation of secure data storage. Current magnetic memories, ranging from low-density stripes up to high-density hard drives, can ultimately be detected using routinely available probes or manipulated by external magnetic perturbations. Antiferromagnetic resistors feature unrivalled robustness but the stable resistive states reported scarcely differ by more than a fraction of a percent at room temperature. Here we show that the metamagnetic (ferromagnetic to antiferromagnetic) transition in intermetallic Fe0.50Rh0.50 can be electrically controlled in a magnetoelectric heterostructure to reveal or cloak a given ferromagnetic state. From an aligned ferromagnetic phase, magnetic states are frozen into the antiferromagnetic phase by the application of an electric field, thus eliminating the stray field and likewise making it insensitive to external magnetic field. Application of a reverse electric field reverts the antiferromagnetic state to the original ferromagnetic state. Our work demonstrates the building blocks of a feasible, extremely stable, non-volatile, electrically addressable, low-energy dissipation, magnetoelectric multiferroic memory.
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Submitted 7 September, 2016; v1 submitted 12 April, 2016;
originally announced April 2016.
