Showing 1–50 of 83 results for author: Horiba, K

Interface-induced collective phase transition in VO2-based bilayers studied by layer-selective spectroscopy

Authors: D. Shiga, S. Inoue, T. Kanda, N. Hasegawa, M. Kitamura, K. Horiba, K. Yoshimatsu, A. F. Santander-Syro, H. Kumigashira

Abstract: We investigated the origin of collective electronic phase transitions induced at the heterointerface between monoclinic insulating (MI) VO2 and rutile metallic (RM) electron-doped VO2 layers using in situ soft x-ray photoelectron spectroscopy (SXPES) on nanoscale VO2/V0.99W0.01O2 (001)R bilayers. Thanks to the surface sensitivity of SXPES, we determined the changes in the electronic structure and… ▽ More We investigated the origin of collective electronic phase transitions induced at the heterointerface between monoclinic insulating (MI) VO2 and rutile metallic (RM) electron-doped VO2 layers using in situ soft x-ray photoelectron spectroscopy (SXPES) on nanoscale VO2/V0.99W0.01O2 (001)R bilayers. Thanks to the surface sensitivity of SXPES, we determined the changes in the electronic structure and V-V dimerization in each constituent layer separately. The layer-selective observation of the electronic and crystal structures in the upper VO2 layer of the bilayer indicates that the MI-phase VO2 layer undergoes a transition to the RM phase by forming the heterointerface. Detailed temperature-dependent measurements reveal that the RM-phase VO2 undergoes a transition to the MI phase with a decrease in temperature, as in the case of a VO2 single-layer film. Furthermore, during the temperature-induced phase transition in the VO2 layer, the spectra are well described by an in-plane phase separation of the RM and MI phases. These results suggest that the interface-induced transition from the MI to the RM phase in the VO2 layer of bilayers occurs as a collective phase transition derived from the static energy balance between the interfacial energy and the bulk free energies of the constituent layers. △ Less

Submitted 5 June, 2025; v1 submitted 26 May, 2025; originally announced May 2025.

Comments: 27 pages (including 8-page Supplemental Material), 4 figures in main text and 6 in Supplement. Corresponding author: D. Shiga ([email protected])

Electronic structure dimensionality of the quantum-critical ferromagnet YbNi$_4$P$_2$

Authors: J. Dai, A. Antezak, W. Broad, M. Thees, V. Zatko, R. L. Bouwmeester, F. Fortuna, P. Le Fèvre, J. E. Rault, K. Horiba, D. V. Vyalikh, H. Kumigashira, K. Kliemt, S., Friedemann, C. Krellner, E. Frantzeskakis, A. F. Santander-Syro

Abstract: YbNi$_4$P$_2$ is the first known ferromagnetic metal showing a second-order quantum phase transition. Current theoretical understanding rules out second order ferromagnetic quantum criticality in centrosymmetric 2D and 3D metals. Thus, studying the electronic structure of YbNi$_4$P$_2$ is of prime fundamental importance. Using angle-resolved photoemission spectroscopy, we experimentally prove the… ▽ More YbNi$_4$P$_2$ is the first known ferromagnetic metal showing a second-order quantum phase transition. Current theoretical understanding rules out second order ferromagnetic quantum criticality in centrosymmetric 2D and 3D metals. Thus, studying the electronic structure of YbNi$_4$P$_2$ is of prime fundamental importance. Using angle-resolved photoemission spectroscopy, we experimentally prove the existence of 1D Fermi surface contours. In addition, our results demonstrate that part of the electronic structure of YbNi$_4$P$_2$ is made of states of higher dimensionality, thereby bringing into question the fact that ferromagnetic quantum criticality in centrosymmetric crystals, is exclusively found in 1D systems. Our experimental data show that the electronic structure of YbNi$_4$P$_2$ is a playground of mixed dimensionality, electron correlations, strong hybridization and spin-orbit coupling, all of them providing new insights in understanding the origin of ferromagnetic quantum criticality. △ Less

Submitted 27 March, 2025; originally announced March 2025.

Comments: 11 pages, 9 figures

Journal ref: Phys. Rev. Lett.134, 126401 (2025)

Spin-Degenerate Bulk Bands and Topological Surface States of RuO2

Authors: T. Osumi, K. Yamauchi, S. Souma, P. Shubhankar, A. Honma, K. Nakayama, K. Ozawa, M. Kitamura, K. Horiba, H. Kumigashira, C. Bigi, F. Bertran, T. Oguchi, T. Takahashi, Y. Maeno, T. Sato

Abstract: Altermagnets are a novel platform to realize exotic electromagnetic properties distinct from those of conventional ferromagnets and antiferromagnets. We report results of micro-focused angle-resolved photoemission spectroscopy (ARPES) on RuO2, of which altermagnetic nature has been under fierce debate. We have elucidated the band structure of the (100), (110) and (101) surfaces of a bulk single cr… ▽ More Altermagnets are a novel platform to realize exotic electromagnetic properties distinct from those of conventional ferromagnets and antiferromagnets. We report results of micro-focused angle-resolved photoemission spectroscopy (ARPES) on RuO2, of which altermagnetic nature has been under fierce debate. We have elucidated the band structure of the (100), (110) and (101) surfaces of a bulk single crystal. We found that, irrespective of the surface orientation, the experimental band structures obtained by ARPES commonly show a semi-quantitative agreement with the bulk-band calculation for the nonmagnetic phase, but display a severe disagreement with that for the antiferromagnetic phase. Moreover, spin-resolved ARPES signifies a negligible spin polarization for the bulk bands. These results suggest the absence of antiferromagnetism and altermagnetic spin splitting. Furthermore, we identified a flat surface band and a dispersive one near the Fermi level at the (100)/(110) and (101) surfaces, respectively, both of which are attributed to the topological surface states associated with the bulk Dirac nodal lines. The present ARPES results suggest that the crystal-orientation-dependent topological surface/interface states need to be taken into account to properly capture the transport and catalytic characteristics of RuO2. △ Less

Submitted 17 January, 2025; originally announced January 2025.

Comments: 29 pages, 9 figures

Evolution of Band Structure in a Kagome Superconductor Cs(V1-xCrx)3Sb5: Toward Universal Understanding of CDW and Superconducting Phase Diagrams

Authors: Shuto Suzuki, Takemi Kato, Yongkai Li, Kosuke Nakayama, Zhiwei Wang, Seigo Souma, Kenichi Ozawa, Miho Kitamura, Koji Horiba, Hiroshi Kumigashira, Takashi Takahashi, Yugui Yao, Takafumi Sato

Abstract: Kagome superconductors AV3Sb5 (A = K, Rb, Cs) exhibit a characteristic superconducting and charge-density wave (CDW) phase diagram upon carrier doping and chemical substitution. However, the key electronic states responsible for such a phase diagram have yet to be clarified. Here we report a systematic micro-focused angle-resolved photoemission spectroscopy (ARPES) study of Cs(V1-xCrx)3Sb5 as a fu… ▽ More Kagome superconductors AV3Sb5 (A = K, Rb, Cs) exhibit a characteristic superconducting and charge-density wave (CDW) phase diagram upon carrier doping and chemical substitution. However, the key electronic states responsible for such a phase diagram have yet to be clarified. Here we report a systematic micro-focused angle-resolved photoemission spectroscopy (ARPES) study of Cs(V1-xCrx)3Sb5 as a function of Cr content x, where Cr substitution causes monotonic reduction of superconducting and CDW transition temperatures. We found that the V-derived bands forming saddle points at the M point and Dirac nodes along high-symmetry cuts show an energy shift due to electron doping by Cr substitution, whereas the Sb-derived electron band at the Gamma point remains almost unchanged, signifying an orbital-selective band shift. We also found that band doubling associated with the emergence of three-dimensional CDW identified at x = 0 vanishes at x = 0.25, in line with the disappearance of CDW. A comparison of band diagrams among Ti-, Nb-, and Cr-substituted Cs(V1-xCrx)3Sb5 suggests the importance to simultaneously take into account the two saddle points at the M point and their proximity to the Fermi energy, to understand the complex phase diagram against carrier doping and chemical pressure. △ Less

Submitted 3 July, 2024; originally announced July 2024.

Comments: 7 pages, 4 figures

Universal Role of Combined Symmetry for the Protection of the Dirac Cone in Antiferromagnetic Topological Insulators

Authors: Asuka Honma, Noriyuki Kabeya, Seigo Souma, Yongjian Wang, Kunihiko Yamauchi, Kosuke Nakayama, Daichi Takane, Kenichi Ozawa, Miho Kitamura, Koji Horiba, Hiroshi Kumigashira, Tamio Oguchi, Takashi Takahashi, Noriaki Kimura, Yoichi Ando, Takafumi Sato

Abstract: Antiferromagnetic topological insulators (AF TIs) are predicted to exhibit exotic physical properties such as gigantic optical and topological magnetoelectric responses. While a key to achieving such phenomena relies on how to break the symmetry protecting the Dirac-cone surface state (SS) and acquire the mass of Dirac fermions, the mechanism has yet to be clarified. To address this issue, we carr… ▽ More Antiferromagnetic topological insulators (AF TIs) are predicted to exhibit exotic physical properties such as gigantic optical and topological magnetoelectric responses. While a key to achieving such phenomena relies on how to break the symmetry protecting the Dirac-cone surface state (SS) and acquire the mass of Dirac fermions, the mechanism has yet to be clarified. To address this issue, we carried out micro-focused angle-resolved photoemission spectroscopy for GdBi hosting the type-II AF order, and uncovered the stripe-type 2$\times$1 reconstruction of the Fermi surface associated with the AF band folding. Intriguingly, in contrast to NdBi with the type-I AF order displaying the surface-selective Dirac-fermion mass, GdBi shows massless behavior irrespective of AF domains due to the robust topological protection. These results strongly suggest a crucial role of the ThetaTD (time-reversal and translational) symmetry to create the Dirac-fermion mass in AF TIs. △ Less

Submitted 9 October, 2024; v1 submitted 19 June, 2024; originally announced June 2024.

Comments: 21 pages, 6 figures

Journal ref: Phys. Rev. B 110, 115152 (2024)

On the cuprates' universal waterfall feature: evidence of a momentum-driven crossover

Authors: Benjamin Bacq-Labreuil, Chafic Fawaz, Yuichi Okazaki, Yukiko Obata, Hervé Cercellier, Patrick Lefevre, François Bertran, David Santos-Cottin, Hajime Yamamoto, Ikuya Yamada, Masaki Azuma, Koji Horiba, Hiroshi Kumigashira, Matteo d'Astuto, Silke Biermann, Benjamin Lenz

Abstract: We study two related universal anomalies of the spectral function of cuprates, so called waterfall and high-energy kink features, by a combined cellular dynamical mean-field theory and angle-resolved photoemission study for the oxychloride Na$_x$Ca$_{2-x}$CuO$_2$Cl$_2$ (Na-CCOC). Tracing their origin back to an interplay of spin-polaron and local correlation effects both in undoped and hole-doped… ▽ More We study two related universal anomalies of the spectral function of cuprates, so called waterfall and high-energy kink features, by a combined cellular dynamical mean-field theory and angle-resolved photoemission study for the oxychloride Na$_x$Ca$_{2-x}$CuO$_2$Cl$_2$ (Na-CCOC). Tracing their origin back to an interplay of spin-polaron and local correlation effects both in undoped and hole-doped (Na-)CCOC, we establish them as a universal crossover between regions differing in the momentum dependence of the coupling and not necessarily in the related quasiparticles' energies. The proposed scenario extends to doping levels coinciding with the cuprate's superconducting dome and motivates further investigations of the fate of spin-polarons in the superconducting phase. △ Less

Submitted 15 January, 2025; v1 submitted 21 December, 2023; originally announced December 2023.

Comments: (Published in Phys. Rev. Lett.) Main text (8 pages, 4 figures) with supplemental information (8 pages, 9 figures, 1 table), revised, added one section to supplemental information

Journal ref: Phys. Rev. Lett. 134, 016502 (2025)

Antiferromagnetic topological insulator with selectively gapped Dirac cones

Authors: A. Honma, D. Takane, S. Souma, K. Yamauchi, Y. Wang, K. Nakayama, K. Sugawara, M. Kitamura, K. Horiba, H. Kumigashira, K. Tanaka, T. K. Kim, C. Cacho, T. Oguchi, T. Takahashi, Yoichi Ando, T. Sato

Abstract: Antiferromagnetic (AF) topological materials offer a fertile ground to explore a variety of quantum phenomena such as axion magnetoelectric dynamics and chiral Majorana fermions. To realize such intriguing states, it is essential to establish a direct link between electronic states and topology in the AF phase, whereas this has been challenging because of the lack of a suitable materials platform.… ▽ More Antiferromagnetic (AF) topological materials offer a fertile ground to explore a variety of quantum phenomena such as axion magnetoelectric dynamics and chiral Majorana fermions. To realize such intriguing states, it is essential to establish a direct link between electronic states and topology in the AF phase, whereas this has been challenging because of the lack of a suitable materials platform. Here we report the experimental realization of the AF topological-insulator phase in NdBi. By using micro-focused angle-resolved photoemission spectroscopy, we discovered contrasting surface electronic states for two types of AF domains; the surface having the out-of-plane component in the AF-ordering vector displays Dirac-cone states with a gigantic energy gap, whereas the surface parallel to the AF-ordering vector hosts gapless Dirac states despite the time-reversal-symmetry breaking. The present results establish an essential role of combined symmetry to protect massless Dirac fermions under the presence of AF order and widen opportunities to realize exotic phenomena utilizing AF topological materials. △ Less

Submitted 20 November, 2023; originally announced November 2023.

Comments: 28 pages, 12 figures

Journal ref: Nat Commun 14, 7396 (2023)

Anomalously large spin-dependent electron correlation in nearly half-metallic ferromagnet CoS$_2$

Authors: Hirokazu Fujiwara, Kensei Terashima, Junya Otsuki, Nayuta Takemori, Harald O. Jeschke, Takanori Wakita, Yuko Yano, Wataru Hosoda, Noriyuki Kataoka, Atsushi Teruya, Masashi Kakihana, Masato Hedo, Takao Nakama, Yoshichika Ōnuki, Koichiro Yaji, Ayumi Harasawa, Kenta Kuroda, Shik Shin, Koji Horiba, Hiroshi Kumigashira, Yuji Muraoka, Takayoshi Yokoya

Abstract: The spin-dependent band structure of CoS$_2$ which is a candidate for a half-metallic ferromagnet was investigated by both spin- and angle-resolved photoemission spectroscopy and theoretical calculations, in order to reappraise the half-metallicity and electronic correlations. We determined the three-dimensional Fermi surface and the spin-dependent band structure. As a result, we found that a part… ▽ More The spin-dependent band structure of CoS$_2$ which is a candidate for a half-metallic ferromagnet was investigated by both spin- and angle-resolved photoemission spectroscopy and theoretical calculations, in order to reappraise the half-metallicity and electronic correlations. We determined the three-dimensional Fermi surface and the spin-dependent band structure. As a result, we found that a part of the minority spin bands is on the occupied side in the vicinity of the Fermi level, providing spectroscopic evidence that CoS$_2$ is not but very close to a half-metal. Band calculations using density functional theory with generalized gradient approximation showed a good agreement with the observed majority spin $e_g$ bands, while it could not explain the observed band width of the minority-spin eg bands. On the other hand, theoretical calculations using dynamical mean field theory could better reproduce the strong mass renormalization in the minority-spin $e_g$ bands. All those results strongly suggest the presence of anomalously enhanced spin-dependent electron correlation effects on the electronic structure in the vicinity of the half-metallic state. We also report the temperature dependence of the electronic structure across the Curie temperature and discuss the mechanism of the thermal demagnetization. Our discovery of the anomalously large spin-dependent electronic correlations not only demonstrates a key factor in understanding the electronic structure of half-metals but also provides a motivation to improve theoretical calculations on spin-polarized strongly correlated systems. △ Less

Submitted 11 October, 2023; originally announced October 2023.

Comments: 53 pages, 25 figures, 1 table

Journal ref: Physical Review B 106, 085114 (2022)

180$^\circ$-twisted bilayer ReSe$_2$ as an artificial noncentrosymmetric semiconductor

Authors: S. Akatsuka, M. Sakano, T. Yamamoto, T. Nomoto, R. Arita, R. Murata, T. Sasagawa, K. Watanabe, T. Taniguchi, M. Kitamura, K. Horiba, K. Sugawara, S. Souma, T. Sato, H. Kumigashira, K. Shinokita, H. Wang, K. Matsuda, S. Masubuchi, T. Machida, K. Ishizaka

Abstract: We have fabricated a 180$^\circ$-twisted bilayer ReSe$_2$ by stacking two centrosymmetric monolayer ReSe$_2$ flakes in opposite directions, which is expected to lose spatial inversion symmetry. By the second harmonic generation and angle-resolved photoemission spectroscopy, we successfully observed spatial inversion symmetry breaking and emergent band dispersions. The band calculation shows the fi… ▽ More We have fabricated a 180$^\circ$-twisted bilayer ReSe$_2$ by stacking two centrosymmetric monolayer ReSe$_2$ flakes in opposite directions, which is expected to lose spatial inversion symmetry. By the second harmonic generation and angle-resolved photoemission spectroscopy, we successfully observed spatial inversion symmetry breaking and emergent band dispersions. The band calculation shows the finite lifting of spin degeneracy (~50 meV) distinct from natural monolayer and bilayer ReSe$_2$. Our results demonstrate that the spin-momentum locked state, which leads to spintronic functions and Berry-curvature-related phenomena, can be realized even with the stacking of centrosymmetric monolayers. △ Less

Submitted 27 September, 2023; originally announced September 2023.

Comments: 15 pages, 4 figures

Unusual surface states associated with the PT-symmetry breaking and antiferromagnetic band folding in NdSb

Authors: Asuka Honma, Daichi Takane, Seigo Souma, Yongjian Wang, Kosuke Nakayama, Miho Kitamura, Koji Horiba, Hiroshi Kumigashira, Takashi Takahashi, Yoichi Ando, Takafumi Sato

Abstract: We have performed micro-focused angle-resolved photoemission spectroscopy on NdSb which exhibits the type-I antiferromagnetism below TN = 16 K. We succeeded in selectively observing the band structure for all three types of single-q antiferromagnetic (AF) domains at the surface. We found that two of the three surfaces whose AF-ordering vector lies within the surface plane commonly show twofold sym… ▽ More We have performed micro-focused angle-resolved photoemission spectroscopy on NdSb which exhibits the type-I antiferromagnetism below TN = 16 K. We succeeded in selectively observing the band structure for all three types of single-q antiferromagnetic (AF) domains at the surface. We found that two of the three surfaces whose AF-ordering vector lies within the surface plane commonly show twofold symmetric surface states (SSs) around the bulk-band edges, whereas the other surface with an out-of-plane AF-ordering vector displays fourfold symmetric shallow electronlike SS at the Brillouin-zone center. We suggest that these SSs commonly originate from the combination of the PT (space-inversion and time-reversal) symmetry breaking at the surface and the band folding due to the AF order. The present results pave a pathway toward understanding the relationship between the symmetry and the surface electronic states in antiferromagnets. △ Less

Submitted 13 September, 2023; v1 submitted 6 July, 2023; originally announced July 2023.

Comments: 23 pages, 7 figures

Journal ref: Phys. Rev. B 108, 115118 (2023)

Unveiling the orbital-selective electronic band reconstruction through the structural phase transition in TaTe$_2$

Authors: Natsuki Mitsuishi, Yusuke Sugita, Tomoki Akiba, Yuki Takahashi, Masato Sakano, Koji Horiba, Hiroshi Kumigashira, Hidefumi Takahashi, Shintaro Ishiwata, Yukitoshi Motome, Kyoko Ishizaka

Abstract: Tantalum ditelluride TaTe$_2$ belongs to the family of layered transition metal dichalcogenides but exhibits a unique structural phase transition at around 170 K that accompanies the rearrangement of the Ta atomic network from a "ribbon chain" to a "butterfly-like" pattern. While multiple mechanisms including Fermi surface nesting and chemical bonding instabilities have been intensively discussed,… ▽ More Tantalum ditelluride TaTe$_2$ belongs to the family of layered transition metal dichalcogenides but exhibits a unique structural phase transition at around 170 K that accompanies the rearrangement of the Ta atomic network from a "ribbon chain" to a "butterfly-like" pattern. While multiple mechanisms including Fermi surface nesting and chemical bonding instabilities have been intensively discussed, the origin of this transition remains elusive. Here we investigate the electronic structure of single-crystalline TaTe$_2$ with a particular focus on its modifications through the phase transition, by employing core-level and angle-resolved photoemission spectroscopy combined with first-principles calculations. Temperature-dependent core-level spectroscopy demonstrates a splitting of the Ta $4f$ core-level spectra through the phase transition indicative of the Ta-dominated electronic state reconstruction. Low-energy electronic state measurements further reveal an unusual kink-like band reconstruction occurring at the Brillouin zone boundary, which cannot be explained by Fermi surface nesting or band folding effects. On the basis of the orbital-projected band calculations, this band reconstruction is mainly attributed to the modifications of specific Ta $5d$ states, namely the $d_{XY}$ orbitals (the ones elongating along the ribbon chains) at the center Ta sites of the ribbon chains. The present results highlight the strong orbital-dependent electronic state reconstruction through the phase transition in this system and provide fundamental insights towards understanding complex electron-lattice-bond coupled phenomena. △ Less

Submitted 10 February, 2024; v1 submitted 27 June, 2023; originally announced June 2023.

Comments: The final version is available in Phys. Rev. Res. (Open Acess)

Journal ref: Physical Review Research 6, 013155 (2024)

Influence of oxygen-coordination number on the electronic structure of single-layer La-based cuprates

Authors: M. Horio, X. Peiao, M. Miyamoto, T. Wada, K. Isomura, J. Osiecki, B. Thiagarajan, C. M. Polley, K. Tanaka, M. Kitamura, K. Horiba, K. Ozawa, T. Taniguchi, M. Fujita, I. Matsuda

Abstract: We present an angle-resolved photoemission spectroscopy study of the single-layer T*-type structured cuprate SmLa$_{1-x}$Sr$_x$CuO$_4$ with unique five-fold pyramidal oxygen coordination. Upon varying oxygen content, T*-SmLa$_{1-x}$Sr$_x$CuO$_4$ evolved from a Mott-insulating to a metallic state where the Luttinger sum rule breaks down under the assumption of a large hole-like Fermi surface. This… ▽ More We present an angle-resolved photoemission spectroscopy study of the single-layer T*-type structured cuprate SmLa$_{1-x}$Sr$_x$CuO$_4$ with unique five-fold pyramidal oxygen coordination. Upon varying oxygen content, T*-SmLa$_{1-x}$Sr$_x$CuO$_4$ evolved from a Mott-insulating to a metallic state where the Luttinger sum rule breaks down under the assumption of a large hole-like Fermi surface. This is in contrast with the known doping evolution of the structural isomer La$_{2-x}$Sr$_x$CuO$_4$ with six-fold octahedral coordination. In addition, quantitatively characterized Fermi surface suggests that the empirical $T_\mathrm{c}$ rule for octahedral oxygen-coordination systems does not apply to T*-SmLa$_{1-x}$Sr$_x$CuO$_4$. The present results highlight unique properties of the T*-type cuprates possibly rooted in its oxygen coordination, and necessitate thorough investigation with careful evaluation of disorder effects. △ Less

Submitted 22 June, 2023; originally announced June 2023.

Comments: Accepted for publication in Phys. Rev. B

Journal ref: Phys. Rev. B 108, 035105 (2023)

Oxygen on-site Coulomb energy in Pr$_{1.3-x}$La$_{0.7}$Ce$_x$CuO$_{4}$ and Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ and its relation with Heisenberg exchange

Authors: A. Chainani, M. Horio, C. -M. Cheng, D. Malterre, K. Sheshadri, M. Kobayashi, K. Horiba, H. Kumigashira, T. Mizokawa, M. Oura, M. Taguchi, Y. Mori, A. Takahashi, T. Konno, T. Ohgi, H. Sato, T. Adachi, Y. Koike, T. Mochiku, K. Hirata, S. Shin, M. K. Wu, A. Fujimori

Abstract: We study the electronic structure of electron-doped Pr$_{1.3-x}$La$_{0.7}$Ce$_{x}$CuO$_{4}$ (PLCCO ; $T_{c}$ = 27 K, x = 0.1) and hole-doped Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ (Bi2212 ; $T_{c}$ = 90 K) cuprate superconductors using x-ray absorption spectroscopy (XAS) and resonant photoemission spectroscopy (Res-PES). From Res-PES across the O K-edge and Cu L-edge, we identify the O 2p and Cu 3d partial… ▽ More We study the electronic structure of electron-doped Pr$_{1.3-x}$La$_{0.7}$Ce$_{x}$CuO$_{4}$ (PLCCO ; $T_{c}$ = 27 K, x = 0.1) and hole-doped Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ (Bi2212 ; $T_{c}$ = 90 K) cuprate superconductors using x-ray absorption spectroscopy (XAS) and resonant photoemission spectroscopy (Res-PES). From Res-PES across the O K-edge and Cu L-edge, we identify the O 2p and Cu 3d partial density of states (PDOS) and their correlation satellites which originate in two-hole Auger final states. Using the Cini-Sawatzky method, analysis of the experimental O 2p PDOS shows an oxygen on-site Coulomb energy for PLCCO to be $U_{p}$ = 3.3$\pm$0.5 eV and for Bi2212, $U_{p}$ = 5.6$\pm$0.5 eV, while the copper on-site Coulomb correlation energy, $U_{d}$ = 6.5$\pm$0.5 eV for Bi2212. The expression for the Heisenberg exchange interaction $J$ in terms of the electronic parameters $U_{d}$, $U_{p}$, charge-transfer energy $Δ$ and Cu-O hopping $t_{pd}$ obtained from a simple Cu$_2$O cluster model is used to carry out an optimization analysis consistent with $J$ known from scattering experiments. The analysis also provides the effective one band on-site Coulomb correlation energy $\tilde{U}$ and the effective hopping $\tilde{t}$. PLCCO and Bi2212 are shown to exhibit very similar values of $\tilde{U}$/$\tilde{t}$ $\sim$9-10, confirming the strongly correlated nature of the singlet ground state in the effective one-band model for both the materials. △ Less

Submitted 10 March, 2023; originally announced March 2023.

Comments: 13, pages, 11 figures

Surface-termination-dependent electronic states in kagome superconductors AV3Sb5 (A = K, Rb, Cs) studied by micro-ARPES

Authors: Takemi Kato, Yongkai Li, Min Liu, Kosuke Nakayama, Zhiwei Wang, Seigo Souma, Miho Kitamura, Koji Horiba, Hiroshi Kumigashira, Takashi Takahashi, Yugui Yao, Takafumi Sato

Abstract: Recently discovered kagome superconductors AV3Sb5 (A = K, Rb, Cs) exhibit exotic bulk and surface physical properties such as charge-density wave (CDW) and chirality, whereas their origins remain unresolved. By using micro-focused angle-resolved photoemission spectroscopy, we discovered that AV3Sb5 commonly exhibits two distinct polar surfaces depending on the termination; electron- and hole-doped… ▽ More Recently discovered kagome superconductors AV3Sb5 (A = K, Rb, Cs) exhibit exotic bulk and surface physical properties such as charge-density wave (CDW) and chirality, whereas their origins remain unresolved. By using micro-focused angle-resolved photoemission spectroscopy, we discovered that AV3Sb5 commonly exhibits two distinct polar surfaces depending on the termination; electron- and hole-doped ones for the A- and Sb-termination, respectively. We observed that the kagome-derived band shows a clear splitting in the A-terminated surface while it is absent in the Sb-terminated counterpart, indicative of the polarity-dependent CDW at the surface. Close comparison of the band-dependent splitting reveals that the three-dimensional CDW structure of the K-terminated surface is different from that of the Rb- or Cs-terminated surface, suggesting the diversity of the CDW ground state. These results provide important insight into the origin of CDW in kagome superconductors AV3Sb5. △ Less

Submitted 27 January, 2023; originally announced January 2023.

Comments: 10 pages, 8 figures

Fermiology of a topological line-nodal compound CaSb2 and its implication to superconductivity: angle-resolved photoemission study

Authors: Chien-Wen Chuang, Seigo Souma, Ayumi Moriya, Kosuke Nakayama, Atsutoshi Ikeda, Mayo Kawaguchi, Keito Obata, Shanta Ranjan Saha, Hidemitsu Takahashi, Shunsaku Kitagawa, Kenji Ishida, Kiyohisa Tanaka, Miho Kitamura, Koji Horiba, Hiroshi Kumigashira, Takashi Takahashi, Shingo Yonezawa, Johnpierre Paglione, Yoshiteru Maeno, Takafumi Sato

Abstract: We performed angle-resolved photoemission spectroscopy with micro-focused beam on a topological line-nodal compound CaSb2 which undergoes a superconducting transition at the onset Tc~1.8 K, to clarify the Fermi-surface topology relevant to the occurrence of superconductivity. We found that a three-dimensional hole pocket at the G point is commonly seen for two types of single-crystalline samples f… ▽ More We performed angle-resolved photoemission spectroscopy with micro-focused beam on a topological line-nodal compound CaSb2 which undergoes a superconducting transition at the onset Tc~1.8 K, to clarify the Fermi-surface topology relevant to the occurrence of superconductivity. We found that a three-dimensional hole pocket at the G point is commonly seen for two types of single-crystalline samples fabricated by different growth conditions. On the other hand, the carrier-doping level estimated from the position of the chemical potential was found to be sensitive to the sample fabrication condition. The cylindrical electron pocket at the Y(C) point predicted by the calculations is absent in one of the two samples, despite the fact that both samples commonly show superconductivity with similar Ts's. This suggests a key role of the three-dimensional hole pocket to the occurrence of superconductivity, and further points to an intriguing possibility to control the topological nature of superconductivity by carrier tuning in CaSb2. △ Less

Submitted 28 November, 2022; originally announced November 2022.

Comments: 7 pages, 3 figures

Journal ref: Phys. Rev. Materials 6, 104203 (2022)

Signature of topological band crossing in ferromagnetic Cr1/3NbSe2 epitaxial thin film

Authors: Bruno Kenichi Saika, Satoshi Hamao, Yuki Majima, Xiang Huang, Hideki Matsuoka, Satoshi Yoshida, Miho Kitamura, Masato Sakano, Tatsuto Hatanaka, Takuya Nomoto, Motoaki Hirayama, Koji Horiba, Hiroshi Kumigashira, Ryotaro Arita, Yoshihiro Iwasa, Masaki Nakano, Kyoko Ishizaka

Abstract: In intercalated transition metal dichalcogenides (I-TMDC), transition metal intercalation introduces magnetic phases which in some cases induce topological band crossing. However, evidence of the topological properties remains elusive in such materials. Here we employ angle-resolved photoemission spectroscopy to reveal the band structure of epitaxially grown ferromagnetic Cr1/3NbSe2. Experimental… ▽ More In intercalated transition metal dichalcogenides (I-TMDC), transition metal intercalation introduces magnetic phases which in some cases induce topological band crossing. However, evidence of the topological properties remains elusive in such materials. Here we employ angle-resolved photoemission spectroscopy to reveal the band structure of epitaxially grown ferromagnetic Cr1/3NbSe2. Experimental evidence of the Weyl crossing shows Cr1/3NbSe2 to be a topological ferromagnet. This work highlights I-TMDC as platform towards the interplay of magnetic and topological physics in low-dimensional systems. △ Less

Submitted 30 October, 2022; originally announced October 2022.

Comments: 18 pages (including references), 4 figures (placed at the end)

Polarity-dependent charge-density wave in a kagome superconductor CsV3Sb5

Authors: Takemi Kato, Yongkai Li, Kosuke Nakayama, Zhiwei Wang, Seigo Souma, Miho Kitamura, Koji Horiba, Hiroshi Kumigashira, Takashi Takahashi, Takafumi Sato

Abstract: Polar surface and interface play a pivotal role for realizing exotic properties of materials, and a search for such polar states is of crucial importance for expanding materials' functionality. Here we report micro-focused angle-resolved photoemission spectroscopy of CsV3Sb5, a member of recently discovered kagome superconductors AV3Sb5 (A = K, Rb, Cs), and show evidence for the polar nature of cl… ▽ More Polar surface and interface play a pivotal role for realizing exotic properties of materials, and a search for such polar states is of crucial importance for expanding materials' functionality. Here we report micro-focused angle-resolved photoemission spectroscopy of CsV3Sb5, a member of recently discovered kagome superconductors AV3Sb5 (A = K, Rb, Cs), and show evidence for the polar nature of cleaved surface which is characterized by Cs- and Sb-terminated surfaces with markedly different fermiology. The Cs-terminated surface shows intriguing doubling of V-derived bands at low temperature associated with the band folding due to the three-dimensional charge-density wave (CDW), whereas the Sb-terminated one shows no band doubling or resultant CDW-gap opening indicative of the suppression of bulk-originated CDW due to polar charge. Such polar-surface-dependent band structure must be incorporated for understanding the origin of unconventional superconducting and charge order at the surface of AV3Sb5. △ Less

Submitted 29 September, 2022; originally announced September 2022.

Comments: 10 pages, 13 figures

Journal ref: Phys. Rev. B 106, L121112 (2022)

Modulation of magnetic property of double-perovskite La2MnCoO6 films by controlling B-antisite disorder

Authors: R. C. Sahoo, S. Zhang, Y. Takeuchi, M. Kitamura, K. Horiba, H. Kumigashira, O. Sakata, T. Soma, A. Ohtomo

Abstract: The predicted physical properties of double perovskites have usually been compromised by their intrinsic B-antisite (AS) disorder effect, but the relationship between them is still unclear for the La2MnCoO6 (LMCO) system. This study focuses on controlling the AS disorder and quantitatively reveals correlations with magnetic and electronic states in epitaxial LMCO films grown on (111) SrTiO3 substr… ▽ More The predicted physical properties of double perovskites have usually been compromised by their intrinsic B-antisite (AS) disorder effect, but the relationship between them is still unclear for the La2MnCoO6 (LMCO) system. This study focuses on controlling the AS disorder and quantitatively reveals correlations with magnetic and electronic states in epitaxial LMCO films grown on (111) SrTiO3 substrates. The AS fraction was precisely controlled by tuning the growth conditions as evaluated from saturation magnetization and x-ray reflection profiles. The saturation magnetization at 5 K decreased linearly from 6 uB per formula unit by 50% as the AS fraction increased from 0 (perfectly ordered) to 0.5 (fully disordered). The x-ray absorption spectroscopy revealed that valence states of Mn and Co were 4+ (3d^3) and 2+ (3d^7), respectively, regardless of AS fraction. A local-spin-moment model is proposed to explain the net magnetizations with and without AS disorder and Mn/Co valence states, suggesting that only the rearrangement of local spin moment of Co at the antisite plays a key role in tuning the magnetism in this LMCO system. △ Less

Submitted 19 August, 2022; originally announced August 2022.

Imaging the itinerant-to-localized transmutation of electrons across the metal-to-insulator transition in V$_2$O$_3$

Authors: Maximilian Thees, Min-Han Lee, Rosa Luca Bouwmeester, Pedro H. Rezende-Gonçalves, Emma David, Alexandre Zimmers, Emmanouil Frantzeskakis, Nicolas M. Vargas, Yoav Kalcheim, Patrick Le Fèvre, Koji Horiba, Hiroshi Kumigashira, Silke Biermann, Juan Trastoy, Marcelo J. Rozenberg, Ivan K. Schuller, Andrés F. Santander-Syro

Abstract: In solids, strong repulsion between electrons can inhibit their movement and result in a "Mott" metal-to-insulator transition (MIT), a fundamental phenomenon whose understanding has remained a challenge for over 50 years. A key issue is how the wave-like itinerant electrons change into a localized-like state due to increased interactions. However, observing the MIT in terms of the energy- and mome… ▽ More In solids, strong repulsion between electrons can inhibit their movement and result in a "Mott" metal-to-insulator transition (MIT), a fundamental phenomenon whose understanding has remained a challenge for over 50 years. A key issue is how the wave-like itinerant electrons change into a localized-like state due to increased interactions. However, observing the MIT in terms of the energy- and momentum-resolved electronic structure of the system, the only direct way to probe both itinerant and localized states, has been elusive. Here we show, using angle-resolved photoemission spectroscopy (ARPES), that in V$_2$O$_3$ the temperature-induced MIT is characterized by the progressive disappearance of its itinerant conduction band, without any change in its energy-momentum dispersion, and the simultaneous shift to larger binding energies of a quasi-localized state initially located near the Fermi level. △ Less

Submitted 9 July, 2022; originally announced July 2022.

Comments: Main Text (4 figures) and Supplementary Information (12 figures)

Journal ref: Science Advances 7(45), eabj1164 (2021)

Electronic band structure of Ti2O3 thin films studied by angle-resolved photoemission spectroscopy

Authors: Naoto Hasegawa, Kohei Yoshimatsu, Daisuke Shiga, Tatsuhiko Kanda, Satoru Miyazaki, Miho Kitamura, Koji Horiba, Hiroshi Kumigashira

Abstract: Ti2O3 exhibits a unique metal-insulator transition (MIT) at approximately 450 K over a wide temperature range of ~ 150 K. This broad MIT accompanied by lattice deformation differs from the sharp MITs observed in most other transition-metal oxides. A long-standing issue is determining the role of electron-electron correlation in the electronic structure and MIT of Ti2O3. However, the lack of inform… ▽ More Ti2O3 exhibits a unique metal-insulator transition (MIT) at approximately 450 K over a wide temperature range of ~ 150 K. This broad MIT accompanied by lattice deformation differs from the sharp MITs observed in most other transition-metal oxides. A long-standing issue is determining the role of electron-electron correlation in the electronic structure and MIT of Ti2O3. However, the lack of information about the band structure of Ti2O3 has hindered investigating the origin of its unusual physical properties. Here, we report the electronic band structure of insulating Ti2O3 films with slight hole doping by angle-resolved photoemission spectroscopy (ARPES). ARPES showed clear band dispersion on the surface of single-crystalline epitaxial films. The experimentally obtained band structures were compared with band-structure calculation results based on density functional theory (DFT) with generalized gradient approximation + U correction. The obtained band structures are in good agreement with the DFT calculations at U = 2.2 eV, suggesting that electron-electron correlation plays an important role in the electronic structure of Ti2O3. Furthermore, the detailed analyses with varying U suggest that the origin of the characteristic MIT in Ti2O3 is a semimetal-semimetal or semimetal-semiconductor transition caused by changes in the Fermi surface due to lattice deformation. △ Less

Submitted 10 May, 2022; originally announced May 2022.

Comments: Main manuscript: 30 pages, 4 figures, Supplemental Material: 23 pages, 15 figures

Fermiology and Origin of Tc Enhancement in a Kagome Superconductor Cs(V1-xNbx)3Sb5

Authors: Takemi Kato, Yongkai Li, Kosuke Nakayama, Zhiwei Wang, Seigo Souma, Fumihiko Matsui, Miho Kitamura, Koji Horiba, Hiroshi Kumigashira, Takashi Takahashi, Yugui Yao, Takafumi Sato

Abstract: Kagome metals AV3Sb5 (A = K, Rb, and Cs) exhibit a characteristic superconducting ground state coexisting with charge-density wave (CDW), whereas the mechanisms of the superconductivity and CDW have yet to be clarified. Here we report a systematic ARPES study of Cs(V1-xNbx)3Sb5 as a function of Nb content x, where isovalent Nb substitution causes an enhancement of superconducting transition temper… ▽ More Kagome metals AV3Sb5 (A = K, Rb, and Cs) exhibit a characteristic superconducting ground state coexisting with charge-density wave (CDW), whereas the mechanisms of the superconductivity and CDW have yet to be clarified. Here we report a systematic ARPES study of Cs(V1-xNbx)3Sb5 as a function of Nb content x, where isovalent Nb substitution causes an enhancement of superconducting transition temperature (Tc) and the reduction of CDW temperature (TCDW). We found that the Nb substitution shifts the Sb-derived electron band at the Gamma point downward and simultaneously moves the V-derived band around the M point upward to lift up the saddle point (SP) away from the Fermi level, leading to the reduction of CDW-gap magnitude and TCDW. This indicates a primary role of the SP density of states to stabilize CDW. The present result also suggests that the enhancement of superconductivity by Nb substitution is caused by the cooperation between the expansion of the Sb-derived electron pocket and the recovery of the V-derived density of states at the Fermi level. △ Less

Submitted 10 May, 2022; originally announced May 2022.

Comments: 6 pages, 3 figures

Rhombic Fermi surfaces in a ferromagnetic MnGa thin film with perpendicular magnetic anisotropy

Authors: M. Kobayashi, N. H. D. Khang, T. Takeda, K. Araki, R. Okano, M. Suzuki, K. Kuroda, K. Yaji, K. Sugawara, S. Souma, K. Nakayama, K. Yamauchi, M. Kitamura, K. Horiba, A. Fujimori, T. Sato, S. Shin, M. Tanaka, P. N. Hai

Abstract: Mn$_{1-x}$Ga$_x$ (MnGa) with the $L1_0$ structure is a ferromagnetic material with strong perpendicular magneto-crystalline anisotropy. Although MnGa thin films have been successfully grown epitaxially and studied for various spintronics devices, fundamental understandings of its electronic structure are still lacking. To address this issue, we have investigated $L1_0$-MnGa thin films using angle-… ▽ More Mn$_{1-x}$Ga$_x$ (MnGa) with the $L1_0$ structure is a ferromagnetic material with strong perpendicular magneto-crystalline anisotropy. Although MnGa thin films have been successfully grown epitaxially and studied for various spintronics devices, fundamental understandings of its electronic structure are still lacking. To address this issue, we have investigated $L1_0$-MnGa thin films using angle-resolved photoemission spectroscopy (ARPES). We have observed a large Fermi surface with a rhombic shape in the $k_x$-$k_y$ plane overlapping neighboring Fermi surfaces. The $k_z$ dependence of the band structure suggests that the band dispersion observed by ARPES comes from the three-dimensional band structure of MnGa folded by a $\sqrt{2} \times \sqrt{2}$ reconstruction. The band dispersion across the corner of the rhombic Fermi surface forms an electron pocket with a weak $k_z$ dependence. The effective mass and the mobility of the bands crossing the Fermi level near the corner are estimated from the ARPES images. Based on the experimental findings, the relationship between the observed band structure and the spin-dependent properties in MnGa-based heterostructures is discussed. △ Less

Submitted 22 March, 2022; originally announced March 2022.

Comments: 20 pages, 7 figures

Journal ref: Phys. Rev. Materials 6, 074403 (2022)

Development of a versatile micro-focused angle-resolved photoemission spectroscopy system with Kirkpatrick-Baez mirror optics

Authors: Miho Kitamura, Seigo Souma, Asuka Honma, Daisuke Wakabayashi, Hirokazu Tanaka, Akio Toyoshima, Kenta Amemiya, Tappei Kawakami, Katsuaki Sugawara, Kosuke Nakayama, Kohei Yoshimatsu, Hiroshi Kumigashira, Takafumi Sato, Koji Horiba

Abstract: Angle-resolved photoemission spectroscopy using a micro-focused beam spot (micro-ARPES) is becoming a powerful tool to elucidate key electronic states of exotic quantum materials. We have developed a versatile micro-ARPES system based on synchrotron radiation beam focused with a Kirkpatrick-Baez mirror optics. The mirrors are monolithically installed on a stage, which is driven with five-axes moti… ▽ More Angle-resolved photoemission spectroscopy using a micro-focused beam spot (micro-ARPES) is becoming a powerful tool to elucidate key electronic states of exotic quantum materials. We have developed a versatile micro-ARPES system based on synchrotron radiation beam focused with a Kirkpatrick-Baez mirror optics. The mirrors are monolithically installed on a stage, which is driven with five-axes motion, and are vibrationally separated from the ARPES measurement system. Spatial mapping of the Auphotolithography pattern on Si signifies the beam spot size of 10 $μ$m (horizontal) x 12 $μ$m (vertical) at the sample position, which is well suited to resolve the fine structure in local electronic states. Utilization of the micro beam and the high precision sample motion system enables the accurate spatially resolved band-structure mapping, as demonstrated by the observation of a small band anomaly associated with tiny sample bending near the edge of a cleaved topological insulator single crystal. △ Less

Submitted 14 March, 2022; originally announced March 2022.

Comments: 21 pages, 8 figures

Superconducting gap and pseudogap in the surface states of the iron-based superconductor PrFeAsO$_{1-y}$ studied by angle-resolved photoemission spectroscopy

Authors: K. Hagiwara, M. Ishikado, M. Horio, K. Koshiishi, S. Nakata, S. Ideta, K. Tanaka, K. Horiba, K. Ono, H. Kumigashira, T. Yoshida, S. Ishida, H. Eisaki, S. Shamoto, A. Fujimori

Abstract: In order to study the possible superconductivity at the polar surfaces of 1111-type iron-based superconductors, which is doped with a large amount of holes in spite of the electron doping in bulk materials, we have performed angle-resolved photoemission spectroscopy (ARPES) studies on superconducting PrFeAsO$_{1-y}$~crystals. We have indeed observed the opening of a superconducting gap on surface-… ▽ More In order to study the possible superconductivity at the polar surfaces of 1111-type iron-based superconductors, which is doped with a large amount of holes in spite of the electron doping in bulk materials, we have performed angle-resolved photoemission spectroscopy (ARPES) studies on superconducting PrFeAsO$_{1-y}$~crystals. We have indeed observed the opening of a superconducting gap on surface-derived hole pockets as well as on a bulk-derived hole pocket. The superconducting gap is found to open on the surface-derived hole pockets below the bulk $T_c$, which suggests that the surface superconductivity is possibly induced by proximity effect from the bulk. We have also observed the opening of a large pseudogap on the surface-derived hole pockets, which is similar to the pseudogap in 122-type bulk superconductors doped with a smaller amount of holes. This suggests that the opening of a large pseudogap is a characteristic property of hole-doped iron-based superconductors. △ Less

Submitted 9 November, 2021; v1 submitted 26 September, 2021; originally announced September 2021.

Comments: Accepted in Physical Review Research

Development of magnetism in Fe-doped magnetic semiconductors: Resonant photoemission and x-ray magnetic circular dichroism studies of (Ga,Fe)As

Authors: Takahito Takeda, Shoya Sakamoto, Le Duc Anh, Yukiharu Takeda, Shin-ichi Fujimori, Miho Kitamura, Koji Horiba, Hiroshi Kumigashira, Atsushi Fujimori, Masaaki Tanaka, Masaki Kobayashi

Abstract: Fe-doped III-V ferromagnetic semiconductors (FMSs) such as (In,Fe)As, (Ga,Fe)Sb, (In,Fe)Sb, and (Al,Fe)Sb are promising materials for spintronic device applications because of the availability of both n- and p-type materials and the high Curie temperatures. On the other hand, (Ga,Fe)As, which has the same zinc-blende crystal structure as the Fe-doped III-V FMSs, shows paramagnetism. The origin of… ▽ More Fe-doped III-V ferromagnetic semiconductors (FMSs) such as (In,Fe)As, (Ga,Fe)Sb, (In,Fe)Sb, and (Al,Fe)Sb are promising materials for spintronic device applications because of the availability of both n- and p-type materials and the high Curie temperatures. On the other hand, (Ga,Fe)As, which has the same zinc-blende crystal structure as the Fe-doped III-V FMSs, shows paramagnetism. The origin of the different magnetic properties in the Fe-doped III-V semiconductors remains to be elucidated. To address this issue, we use resonant photoemission spectroscopy (RPES) and x-ray magnetic circular dichroism (XMCD) to investigate the electronic and magnetic properties of the Fe ions in a paramagnetic (Ga$_{0.95}$,Fe$_{0.05}$)As thin film. The observed Fe 2$p$-3$d$ RPES spectra show that the Fe 3$d$ states are similar to those of ferromagnetic (Ga,Fe)Sb. The estimated Fermi level is located in the middle of the band gap in (Ga,Fe)As. The Fe $L_{2,3}$ XMCD spectra of (Ga$_{0.95}$,Fe$_{0.05}$)As show pre-edge structures, which are not observed in the Fe-doped FMSs, indicating that the minority-spin ($\downarrow$) $e_\downarrow$ states are vacant in (Ga$_{0.95}$,Fe$_{0.05}$)As. The XMCD results suggest that the carrier-induced ferromagnetic interaction in (Ga$_{0.95}$,Fe$_{0.05}$)As is short-ranged and weaker than that in the Fe-doped FMSs. The experimental findings suggest that the electron occupancy of the $e_\downarrow$ states contributes to the appearance of ferromagnetism in the Fe-doped III-V semiconductors, for p-type as well as n-type compounds. △ Less

Submitted 19 August, 2021; originally announced August 2021.

Electronic structure of SrTi$_{1-x}$V$_x$O$_3$ films studied by ${\it in\ situ}$ photoemission spectroscopy: Screening for a transparent electrode material

Authors: Tatsuhiko Kanda, Daisuke Shiga, Ryu Yukawa, Naoto Hasegawa, Duy Khanh Nguyen, Xianglin Cheng, Ryosuke Tokunaga, Miho Kitamura, Koji Horiba, Kohei Yoshimatsu, Hiroshi Kumigashira

Abstract: This study investigated the electronic structure of SrTi$_{1-x}$V$_x$O$_3$ (STVO) thin films, which are solid solutions of strongly correlated transparent conductive oxide (TCO) SrVO$_3$ and oxide semiconductor SrTiO$_3$, using ${in situ}$ photoemission spectroscopy. STVO is one of the most promising candidates for correlated-metal TCO because it has the capability of optimizing the performance of… ▽ More This study investigated the electronic structure of SrTi$_{1-x}$V$_x$O$_3$ (STVO) thin films, which are solid solutions of strongly correlated transparent conductive oxide (TCO) SrVO$_3$ and oxide semiconductor SrTiO$_3$, using ${in situ}$ photoemission spectroscopy. STVO is one of the most promising candidates for correlated-metal TCO because it has the capability of optimizing the performance of transparent electrodes by varying ${x}$. Systematic and significant spectral changes were found near the Fermi level (${E_{\rm F}}$) as a function of ${x}$, while the overall electronic structure of STVO is in good agreement with the prediction of band structure calculations. As ${x}$ decreases from 1.0, spectral weight transfer occurs from the coherent band near ${E_{\rm F}}$ to the incoherent states (lower Hubbard band) around 1.0-1.5 eV. Simultaneously, a pseudogap is formed at ${E_{\rm F}}$, indicating a significant reduction in quasiparticle spectral weight within close vicinity of ${E_{\rm F}}$. This pseudogap seems to evolve into an energy gap at ${x}$ = 0.4, suggesting the occurrence of a composition-driven metal-insulator transition. From angle-resolved photoemission spectroscopic results, the carrier concentration ${n}$ changes proportionally as a function of ${x}$ in the metallic range of ${x}$ = 0.6-1.0. In contrast, the mass enhancement factor, which is proportional to the effective mass (${m^*}$), does not change significantly with varying ${x}$. These results suggest that the key factor of ${n/m^*}$ in optimizing the performance of correlated-metal TCO is tuned by ${x}$, highlighting the potential of STVO to achieve the desired TCO performance in the metallic region. △ Less

Submitted 22 May, 2021; originally announced May 2021.

Comments: 32 pages, 5 main figures, and 7 supplementary figures

Local polarization and valence distribution in LaNiO3/LaMnO3 heterostructures

Authors: Masato Anada, Satoshi Sakaguchi, Kazuki Nagai, Miho Kitamura, Koji Horiba, Hiroshi Kumigashira, Yusuke Wakabayashi

Abstract: The inside of the electrical double layer at perovskite oxide heterointerfaces is examined. Here, we report the local polarization and valence distribution in LaNiO$_3$/LaMnO$_3$ and LaMnO$_3$/LaNiO$_3$ bilayers on a SrTiO$_3$ (001) substrate. Simultaneous measurements of two aspects of the structure are realized by using Bayesian inference based on resonant- and nonresonant-surface X-ray diffract… ▽ More The inside of the electrical double layer at perovskite oxide heterointerfaces is examined. Here, we report the local polarization and valence distribution in LaNiO$_3$/LaMnO$_3$ and LaMnO$_3$/LaNiO$_3$ bilayers on a SrTiO$_3$ (001) substrate. Simultaneous measurements of two aspects of the structure are realized by using Bayesian inference based on resonant- and nonresonant-surface X-ray diffraction data. The results show that the average Mn valences are Mn$^{3.12+}$ and Mn$^{3.19+}$ for the two samples. The intensity of their local electric field is $\sim$1~GV/m and the direction of the field points from LaMnO$_3$ to LaNiO$_3$. △ Less

Submitted 25 April, 2021; originally announced April 2021.

Comments: 19pages, 4 figures

Journal ref: Phys. Rev. B 104, 085111 (2021)

Inter-valence charge transfer and charge transport in the spinel ferrite ferromagnetic semiconductor Ru-doped CoFe$_2$O$_4$

Authors: Masaki Kobayashi, Munetoshi Seki, Masahiro Suzuki, Miho Kitamura, Koji Horiba, Hiroshi Kumigashira, Atsushi Fujimori, Masaaki Tanaka, Hitoshi Tabata

Abstract: Inter-valence charge transfer (IVCT) is electron transfer between two metal $M$ sites differing in oxidation states through a bridging ligand: $M^{n+1} + M'^{m} \rightarrow M^{n} + M'^{m+1}$. It is considered that IVCT is related to the hopping probability of electron (or the electron mobility) in solids. Since controlling the conductivity of ferromagnetic semiconductors (FMSs) is a key subject fo… ▽ More Inter-valence charge transfer (IVCT) is electron transfer between two metal $M$ sites differing in oxidation states through a bridging ligand: $M^{n+1} + M'^{m} \rightarrow M^{n} + M'^{m+1}$. It is considered that IVCT is related to the hopping probability of electron (or the electron mobility) in solids. Since controlling the conductivity of ferromagnetic semiconductors (FMSs) is a key subject for the development of spintronic device applications, the manipulation of the conductivity through IVCT may become a new approach of band engineering in FMSs. In Ru-doped cobalt ferrite CoFe$_2$O$_4$ (CFO) that shows ferrimagnetism and semiconducting transport properties, the reduction of the electric resistivity is attributed to both the carrier doping caused by the Ru substitution for Co and the increase of the carrier mobility due to hybridization between the wide Ru $4d$ and the Fe $3d$ orbitals. The latter is the so-called IVCT mechanism that is charge transfer between the mixed valence Fe$^{2+}$/Fe$^{3+}$ states facilitated by bridging Ru $4d$ orbital: Fe$^{2+}$ + Ru$^{4+}$ $\leftrightarrow$ Fe$^{3+}$ + Ru$^{3+}$. To elucidate the emergence of the IVCT state, we have conducted x-ray absorption spectroscopy (XAS) and resonant photoemission spectroscopy (RPES) measurements on non-doped CFO and Co$_{0.5}$Ru$_{0.5}$Fe$_2$O$_4$ (CRFO) thin films. The observations of the XAS and RPES spectra indicate that the presence of the mixed valence Fe$^{2+}$/Fe$^{3+}$ state and the hybridization between the Fe $3d$ and Ru $4d$ states in the valence band. These results provide experimental evidence for the IVCT state in CRFO, demonstrating a novel mechanism that controls the electron mobility through hybridization between the $3d$ transition-metal cations with intervening $4d$ states. △ Less

Submitted 5 February, 2021; originally announced February 2021.

Comments: 16 pages, 5 figures, 1 table

Journal ref: Phys. Rev. B 105, 205103 (2022)

Molecular beam epitaxy growth of the highly conductive oxide SrMoO$_3$

Authors: Hiroshi Takatsu, Naoya Yamashina, Daisuke Shiga, Ryu Yukawa, Koji Horiba, Hiroshi Kumigashira, Takahito Terashima, Hiroshi Kageyama

Abstract: SrMoO$_3$ is a promising material for its excellent electrical conductivity, but growing high-quality thin films remains a challenge. Here we synthesized epitaxial films of SrMoO$_3$ using the molecular beam epitaxy (MBE) technique under a low oxygen-flow rate. Introduction of SrTiO$_3$ buffer layers of 4--8 unit cells between the film and the (001)-oriented SrTiO$_3$ or KTaO$_3$ substrate was cru… ▽ More SrMoO$_3$ is a promising material for its excellent electrical conductivity, but growing high-quality thin films remains a challenge. Here we synthesized epitaxial films of SrMoO$_3$ using the molecular beam epitaxy (MBE) technique under a low oxygen-flow rate. Introduction of SrTiO$_3$ buffer layers of 4--8 unit cells between the film and the (001)-oriented SrTiO$_3$ or KTaO$_3$ substrate was crucial to remove impurities and/or roughness of the film surface. The obtained film shows improved electrical conductivities as compared with films obtained by other techniques. The high quality of the SrMoO$_3$ film is also verified by angle-resolved photoemission spectroscopy (ARPES) measurements showing clear Fermi surfaces. △ Less

Submitted 4 December, 2020; originally announced December 2020.

Comments: 6 pages, 5 figures

Journal ref: J. Cryst. Growth 543, 125685 (2020)

Observation of inverted band structure in topological Dirac-semimetal candidate CaAuAs

Authors: Kosuke Nakayama, Zhiwei Wang, Daichi Takane, Seigo Souma, Yuya Kubota, Yuki Nakata, Cephise Cacho, Timur K. Kim, Sandy Adhitia Ekahana, Ming Shi, Miho Kitamura, Koji Horiba, Hiroshi Kumigashira, Takashi Takahashi, Yoichi Ando, Takafumi Sato

Abstract: We have performed high-resolution angle-resolved photoemission spectroscopy of ternary pnictide CaAuAs which is predicted to be a three-dimensional topological Dirac semimetal (TDS). By accurately determining the bulk-band structure, we have revealed the coexistence of three-dimensional and quasi-two-dimensional Fermi surfaces with dominant hole carriers. The band structure around the Brillouin-zo… ▽ More We have performed high-resolution angle-resolved photoemission spectroscopy of ternary pnictide CaAuAs which is predicted to be a three-dimensional topological Dirac semimetal (TDS). By accurately determining the bulk-band structure, we have revealed the coexistence of three-dimensional and quasi-two-dimensional Fermi surfaces with dominant hole carriers. The band structure around the Brillouin-zone center is characterized by an energy overlap between hole and electron pockets, in excellent agreement with first-principles band-structure calculations. This indicates the occurrence of bulk-band inversion, supporting the TDS state in CaAuAs. Because of the high tunability in the chemical composition besides the TDS nature, CaAuAs provides a precious opportunity for investigating the quantum phase transition from TDS to other exotic topological phases. △ Less

Submitted 10 July, 2020; originally announced July 2020.

Comments: 6 pages, 4 figures

Journal ref: Phys. Rev. B 102, 041104(R) (2020)

Extended superconducting dome of electron-doped cuprates after protect annealing revealed by ARPES

Authors: C. Lin, T. Adachi, M. Horio, T. Ohgi, M. A. Baqiya, T. Kawamata, H. Sato, T. Sumura, K. Koshiishi, S. Nakata, G. Shibata, K. Hagiwara, M. Suzuki, K. Ono, K. Horiba, H. Kumigashira, S. Ideta, K. Tanaka, Y. Koike, A. Fujimori

Abstract: The electron-doped cuprates are usually characterized by a more robust antiferromagnetic phase and a much narrower superconducting (SC) dome than those of the hole-doped counterparts. Recently, bulk single crystals of Pr1.3-xLa0.7CexCuO4-δ (PLCCO) prepared by the protect annealing method have been studied extensively and revealed many intriguing properties that were different from those obtained f… ▽ More The electron-doped cuprates are usually characterized by a more robust antiferromagnetic phase and a much narrower superconducting (SC) dome than those of the hole-doped counterparts. Recently, bulk single crystals of Pr1.3-xLa0.7CexCuO4-δ (PLCCO) prepared by the protect annealing method have been studied extensively and revealed many intriguing properties that were different from those obtained from samples annealed by the conventional methods. Here, we report on a systematic angle-resolved photoemission spectroscopy study of PLCCO single crystals after protect annealing. The results indicate that the actual electron concentration (nFS ) estimated from the Fermi-surface area is significantly larger than the Ce concentration x and the new nFS-based SC dome of PLCCO is more extended towards the overdoped side than the x-based SC dome derived for samples prepared using the conventional annealing method. △ Less

Submitted 18 January, 2021; v1 submitted 8 June, 2020; originally announced June 2020.

Journal ref: Phys. Rev. Research 3, 013180 (2021)

Electronic structure of a 3x3-ordered silicon layer on Al(111)

Authors: Y. Sato, Y. Fukaya, M. Cameau, A. K. Kundu, D. Shiga, R. Yukawa, K. Horiba, C. -H. Chen, A. Huang, H. -T. Jeng, T. Ozaki, H. Kumigashira, M. Niibe, I. Matsuda

Abstract: Electronic structure of the 3x3 ordered-phase of a silicon (Si) layer on Al(111) has been studied by angle resolved photoemission spectroscopy (ARPES) technique using synchrotron radiation and modeled by a trial atomic model. A closed Fermi surface originating from linearly dispersing band is identified. A band structure calculation of a trial atomic model of the honeycomb silicene on Al(111) impl… ▽ More Electronic structure of the 3x3 ordered-phase of a silicon (Si) layer on Al(111) has been studied by angle resolved photoemission spectroscopy (ARPES) technique using synchrotron radiation and modeled by a trial atomic model. A closed Fermi surface originating from linearly dispersing band is identified. A band structure calculation of a trial atomic model of the honeycomb silicene on Al(111) implies that the metallic band originates from the Al-Si hybrid state that has the Dirac cone-like dispersion curves. The Si layer on Al(111) can be a model system of Xene to realize the massless electronic system through the overlayer-substrate interaction. △ Less

Submitted 11 May, 2020; originally announced May 2020.

Comments: 6 pages, 6 figures

Journal ref: Phys. Rev. Materials 4, 064005 (2020)

Thickness dependence of electronic and crystal structures in VO$_2$ ultrathin films: suppression of the collaborative Mott-Peierls transition

Authors: D. Shiga, B. E. Yang, N. Hasegawa, T. Kanda, R. Tokunaga, K. Yoshimatsu, R. Yukawa, M. Kitamura, K. Horiba, H. Kumigashira

Abstract: Through ${in~situ}$ photoemission spectroscopy, we investigated the change in the electronic and crystal structures of dimensionality-controlled VO$_2$ films coherently grown on TiO$_2$(001) substrates. In the nanostructured films, the balance between the instabilities of a bandlike Peierls transition and a Mott transition is controlled as a function of thickness. The characteristic spectral chang… ▽ More Through ${in~situ}$ photoemission spectroscopy, we investigated the change in the electronic and crystal structures of dimensionality-controlled VO$_2$ films coherently grown on TiO$_2$(001) substrates. In the nanostructured films, the balance between the instabilities of a bandlike Peierls transition and a Mott transition is controlled as a function of thickness. The characteristic spectral change associated with temperature-driven metal-insulator transition in VO$_2$ thick films holds down to 1.5 nm (roughly corresponding to five V atoms along the [001] direction), whereas VO$_2$ films of less than 1.0 nm exhibit insulating nature without V-V dimerization. These results suggest that the delicate balance between a Mott instability and a bandlike Peierls instability is modulated at a scale of a few nanometers by the dimensional crossover effects and confinement effects, which consequently induce the complicated electronic phase diagram of ultrathin VO$_2$ films. △ Less

Submitted 1 May, 2020; originally announced May 2020.

Comments: 30 pages, 4 main figures, 4 supplementary figures

Journal ref: Phys. Rev. B 102, 115114 (2020)

Switching of band inversion and topological surface states by charge density wave

Authors: N. Mitsuishi, Y. Sugita, M. S. Bahramy, M. Kamitani, T. Sonobe, M. Sakano, T. Shimojima, H. Takahashi, H. Sakai, K. Horiba, H. Kumigashira, K. Taguchi, K. Miyamoto, T. Okuda, S. Ishiwata, Y. Motome, K. Ishizaka

Abstract: Topologically nontrivial materials host protected edge states associated with the bulk band inversion through the bulk-edge correspondence. Manipulating such edge states is highly desired for developing new functions and devices practically using their dissipation-less nature and spin-momentum locking. Here we introduce a transition-metal dichalcogenide VTe$_2$, that hosts a charge density wave (C… ▽ More Topologically nontrivial materials host protected edge states associated with the bulk band inversion through the bulk-edge correspondence. Manipulating such edge states is highly desired for developing new functions and devices practically using their dissipation-less nature and spin-momentum locking. Here we introduce a transition-metal dichalcogenide VTe$_2$, that hosts a charge density wave (CDW) coupled with the band inversion involving V3$d$ and Te5$p$ orbitals. Spin- and angle-resolved photoemission spectroscopy with first-principles calculations reveal the huge anisotropic modification of the bulk electronic structure by the CDW formation, accompanying the selective disappearance of Dirac-type spin-polarized topological surface states that exist in the normal state. Thorough three dimensional investigation of bulk states indicates that the corresponding band inversion at the Brillouin zone boundary dissolves upon CDW formation, by transforming into anomalous flat bands. Our finding provides a new insight to the topological manipulation of matters by utilizing CDWs' flexible characters to external stimuli. △ Less

Submitted 20 April, 2020; originally announced April 2020.

Comments: 46 pages, 6 main figures, 12 supplementary figures

Journal ref: Nat. Commun. 11, 2466 (2020)

Spin and orbital magnetic moments in perpendicularly magnetized Ni$_{1-x}$Co$_{2+y}$O$_{4-z}$ epitaxial thin films: Effects of site-dependent cation valence states

Authors: Daisuke Kan, Masaichiro Mizumaki, Miho Kitamura, Yoshinori Kotani, Yufan Shen, Ikumi Suzuki, Koji Horiba, Yuichi Shimakawa

Abstract: We carried out x-ray absorption spectroscopy (XAS) and x-ray magnetic circular dichroism (XMCD) spectroscopy and investigated cation valence states and spin and orbital magnetic moments in the inverse-spinel ferrimagnet Ni$_{1-x}$Co$_{2+y}$O$_{4-z}$ (NCO) epitaxial films with the perpendicular magnetic anisotropy. We show that the oxygen pressure P$_{O2}$ during the film growth by pulsed laser dep… ▽ More We carried out x-ray absorption spectroscopy (XAS) and x-ray magnetic circular dichroism (XMCD) spectroscopy and investigated cation valence states and spin and orbital magnetic moments in the inverse-spinel ferrimagnet Ni$_{1-x}$Co$_{2+y}$O$_{4-z}$ (NCO) epitaxial films with the perpendicular magnetic anisotropy. We show that the oxygen pressure P$_{O2}$ during the film growth by pulsed laser deposition influences not only the cation stoichiometry (site-occupation) but also the cation valence state. Our XAS results show that the Ni in the O$_{h}$-site is in the intermediate valence state between +2 and +3, Ni$^{(2+δ)+}$ (0<$δ$<1), whose nominal valence state (the $δ$ value) varies depending on P$_{O2}$. On the other hand, the Co in the octahedral (O$_{h}$) and tetrahedral (T$_{d}$) sites respectively have the valence state close to +3 and +2. We also find that the XMCD signals originate mainly from the T$_{d}$-site Co$^{2+}$ (Co$_{Td}$) and O$_{h}$-site Ni$^{(2+δ)+}$ (Ni$_{Oh}$), indicating that these cation valence states are the key in determining the magnetic and transport properties of NCO films. Interestingly, the valence state of Ni$^{(2+δ)+}$ that gives rise to the XMCD signal remains unchanged independent of P$_{O2}$. The electronic structure of Ni$^{(2+δ)+}$ that is responsible for the magnetic moment and electrical conduction differs from those of Ni$^{2+}$ and Ni$^{3+}$. In addition, the orbital magnetic moment originating from Co$_{Td}$ is as large as 0.14 $μ_{B}/Co_{Td}$ and parallel to the magnetization while the Ni$_{Oh}$ orbital moment is as small as 0.07 $μ_{B}/Ni_{Oh}$ and is rather isotropic. The Co$_{Td}$ therefore plays the key role in the perpendicular magnetic anisotropy of the films. Our results demonstrate the significance of the site-dependent cations valence states for the magnetic and transport properties of NCO films. △ Less

Submitted 17 April, 2020; originally announced April 2020.

Journal ref: Phys. Rev. B 101, 224434 (2020)

Tunable two-dimensional electron system at the (110) surface of SnO$_2$

Authors: J. Dai, E. Frantzeskakis, F. Fortuna, P. Lömker, R. Yukawa, M. Thees, S. Sengupta, P. Le Fèvre, F. Bertran, J. E. Rault, K. Horiba, M. Müller, H. Kumigashira, A. F. Santander-Syro

Abstract: We report the observation of a two-dimensional electron system (2DES) at the $(110)$ surface of the transparent bulk insulator SnO$_2$, and the tunability of its carrier density by means of temperature or Eu deposition. The 2DES is insensitive to surface reconstructions and, surprisingly, it survives even after exposure to ambient conditions --an extraordinary fact recalling the well known catalyt… ▽ More We report the observation of a two-dimensional electron system (2DES) at the $(110)$ surface of the transparent bulk insulator SnO$_2$, and the tunability of its carrier density by means of temperature or Eu deposition. The 2DES is insensitive to surface reconstructions and, surprisingly, it survives even after exposure to ambient conditions --an extraordinary fact recalling the well known catalytic properties SnO$_2$. Our data show that surface oxygen vacancies are at the origin of such 2DES, providing key information about the long-debated origin of $n$-type conductivity in SnO$_2$, at the basis of a wide range of applications. Furthermore, our study shows that the emergence of a 2DES in a given oxide depends on a delicate interplay between its crystal structure and the orbital character of its conduction band. △ Less

Submitted 16 February, 2020; originally announced February 2020.

Comments: 11 pages, 12 figures

Journal ref: Physical Review B 101, 085121 (2020)

Unusual change in the Dirac-cone energy band upon two-step magnetic transition in CeBi

Authors: Hikaru Oinuma, Seigo Souma, Kosuke Nakayama, Koji Horiba, Hiroshi Kumigashira, Makoto Yoshida, Akira Ochiai, Takashi Takahashi, Takafumi Sato

Abstract: We have performed angle-resolved photoemission spectroscopy (ARPES) on CeBi which undergoes a two-step antiferromagnetic (AF) transition with temperature. Soft-x-ray ARPES has revealed the inverted band structure at the X point of bulk Brillouin zone for CeBi (and also for LaBi) as opposed to LaSb with non-inverted band structure. Low-energy ARPES on CeBi has revealed the Dirac-cone band at the Ga… ▽ More We have performed angle-resolved photoemission spectroscopy (ARPES) on CeBi which undergoes a two-step antiferromagnetic (AF) transition with temperature. Soft-x-ray ARPES has revealed the inverted band structure at the X point of bulk Brillouin zone for CeBi (and also for LaBi) as opposed to LaSb with non-inverted band structure. Low-energy ARPES on CeBi has revealed the Dirac-cone band at the Gamma point in the paramagnetic phase associated with the bulk band inversion. On the other hand, a double Dirac-cone band appears on entering the first AF phase at T = 25 K, whereas a single Dirac-cone band recovers below the second AF transition at T = 14 K. The present result suggests an intricate interplay between antiferromagnetism and topological surface states in CeBi. △ Less

Submitted 2 October, 2019; originally announced October 2019.

Comments: 8 pages, 6 figures

Journal ref: Physical Review B 100, 125122 (2019)

Influence of interface dipole layers on the performance of graphene field effect transistors

Authors: Naoka Nagamura, Hirokazu Fukidome, Kosuke Nagashio, Koji Horiba, Takayuki Ide, Kazutoshi Funakubo, Keiichiro Tashima, Akira Toriumi, Maki Suemitsu, Karsten Horn, Masaharu Oshima

Abstract: The linear band dispersion of graphene's bands near the Fermi level gives rise to its unique electronic properties, such as a giant carrier mobility, and this has triggered extensive research in applications, such as graphene field-effect transistors (GFETs). However, GFETs generally exhibit a device performance much inferior compared to the expected one. This has been attributed to a strong depen… ▽ More The linear band dispersion of graphene's bands near the Fermi level gives rise to its unique electronic properties, such as a giant carrier mobility, and this has triggered extensive research in applications, such as graphene field-effect transistors (GFETs). However, GFETs generally exhibit a device performance much inferior compared to the expected one. This has been attributed to a strong dependence of the electronic properties of graphene on the surrounding interfaces. Here we study the interface between a graphene channel and SiO$_{2}$, and by means of photoelectron spectromicroscopy achieve a detailed determination of the course of band alignment at the interface. Our results show that the electronic properties of graphene are modulated by a hydrophilic SiO$_{2}$ surface, but not by a hydrophobic one. By combining photoelectron spectromicroscopy with GFET transport property characterization, we demonstrate that the presence of electrical dipoles in the interface, which reflects the SiO$_{2}$ surface electrochemistry, determines the GFET device performance. A hysteresis in the resistance vs. gate voltage as a function of polarity is ascribed to a reversal of the dipole layer by the gate voltage. These data pave the way for GFET device optimization. △ Less

Submitted 7 July, 2019; originally announced July 2019.

Comments: 29 pages, 7 figures

Journal ref: Carbon 152 680-687 (2019)

Evidence for bulk nodal loops and universality of Dirac-node arc surface states in ZrGeXc (Xc = S, Se, Te)

Authors: Takechika Nakamura, Seigo Souma, Zhiwei Wang, Kunihiko Yamauchi, Daichi Takane, Hikaru Oinuma, Kosuke Nakayama, Koji Horiba, Hiroshi Kumigashira, Tamio Oguchi, Takashi Takahashi, Yoichi Ando, Takafumi Sato

Abstract: We have performed angle-resolved photoemission spectroscopy (ARPES) on layered ternary compounds ZrGeXc (Xc = S, Se, and Te) with square Ge lattices. ARPES measurements with bulk-sensitive soft-x-ray photons revealed a quasi-two-dimensional bulk-band structure with the bulk nodal loops protected by glide mirror symmetry of the crystal lattice. Moreover, high-resolution ARPES measurements near the… ▽ More We have performed angle-resolved photoemission spectroscopy (ARPES) on layered ternary compounds ZrGeXc (Xc = S, Se, and Te) with square Ge lattices. ARPES measurements with bulk-sensitive soft-x-ray photons revealed a quasi-two-dimensional bulk-band structure with the bulk nodal loops protected by glide mirror symmetry of the crystal lattice. Moreover, high-resolution ARPES measurements near the Fermi level with vacuum-ultraviolet photons combined with first-principles band-structure calculations elucidated a Dirac-node-arc surface state traversing a tiny spin-orbit gap associated with the nodal loops. We found that this surface state commonly exists in ZrGeXc despite the difference in the shape of nodal loops. The present results suggest that the spin-orbit coupling and the multiple nodal loops cooperatively play a key role in creating the exotic Dirac-node-arc surface states in this class of topological line-node semimetals. △ Less

Submitted 18 June, 2019; originally announced June 2019.

Comments: 11 pages, 9 figures

Journal ref: Phys. Rev. B 99, 245105 (2019)

Natural van der Waals heterostructural single crystals with both magnetic and topological properties

Authors: Jiazhen Wu, Fucai Liu, Masato Sasase, Koichiro Ienaga, Yukiko Obata, Ryu Yukawa, Koji Horiba, Hiroshi Kumigashira, Satoshi Okuma, Takeshi Inoshita, Hideo Hosono

Abstract: Heterostructures having both magnetism and topology are promising materials for the realization of exotic topological quantum states while challenging in synthesis and engineering. Here, we report natural magnetic van der Waals heterostructures of (MnBi2Te4)m(Bi2Te3)n that exhibit controllable magnetic properties while maintaining their topological surface states. The interlayer antiferromagnetic… ▽ More Heterostructures having both magnetism and topology are promising materials for the realization of exotic topological quantum states while challenging in synthesis and engineering. Here, we report natural magnetic van der Waals heterostructures of (MnBi2Te4)m(Bi2Te3)n that exhibit controllable magnetic properties while maintaining their topological surface states. The interlayer antiferromagnetic exchange coupling is gradually weakened as the separation of magnetic layers increases, and an anomalous Hall effect that is well coupled with magnetization and shows ferromagnetic hysteresis was observed below 5 K. The obtained homogeneous heterostructure with atomically sharp interface and intrinsic magnetic properties will be an ideal platform for studying the quantum anomalous Hall effect, axion insulator states, and the topological magnetoelectric effect. △ Less

Submitted 16 November, 2019; v1 submitted 7 May, 2019; originally announced May 2019.

Comments: 40 pages, 15 figures

Journal ref: Science Advances, 2019

Relationship between charge redistribution and ferromagnetism at the heterointerface between perovskite oxides LaNiO$_3$ and LaMnO$_3$

Authors: Miho Kitamura, Masaki Kobayashi, Enju Sakai, Makoto Minohara, Ryu Yukawa, Daisuke Shiga, Kenta Amemiya, Yosuke Nonaka, Goro Shibata, Atsushi Fujimori, Hiroshi Fujioka, Koji Horiba, Hiroshi Kumigashira

Abstract: To investigate the relationship between the charge redistribution and ferromagnetism at the heterointerface between perovskite transition-metal oxides LaNiO$_3$ (LNO) and LaMnO$_3$ (LMO), we performed x-ray absorption spectroscopy and x-ray magnetic circular dichroism (XMCD) measurements. In the LNO/LMO heterostructures with asymmetric charge redistribution, the electrons donated from Mn to Ni ion… ▽ More To investigate the relationship between the charge redistribution and ferromagnetism at the heterointerface between perovskite transition-metal oxides LaNiO$_3$ (LNO) and LaMnO$_3$ (LMO), we performed x-ray absorption spectroscopy and x-ray magnetic circular dichroism (XMCD) measurements. In the LNO/LMO heterostructures with asymmetric charge redistribution, the electrons donated from Mn to Ni ions are confined within one monolayer (ML) of LNO at the interface, whereas holes are distributed over 3-4 ML on the LMO side. A detailed analysis of the Ni-$L_{2,3}$ and Mn-$L_{2,3}$ XMCD spectra reveals that Ni magnetization is induced only by the Ni$^{2+}$ ions in the 1 ML LNO adjacent to the interface, while the magnetization of Mn ions is increased in the 3-4 ML LMO of the interfacial region. The characteristic length scale of the emergent (increased) interfacial ferromagnetism of the LNO (LMO) layers is in good agreement with that of the charge distribution across the interface, indicating a close relationship between the charge redistribution due to the interfacial charge transfer and the ferromagnetism of the LNO/LMO interface. Furthermore, the XMCD spectra clearly demonstrate that the vectors of induced magnetization of both ions are aligned ferromagnetically, suggesting that the delicate balance between the exchange interactions occurring inside each layer and across the interface may induce the canted ferromagnetism of Ni$^{2+}$ ions, resulting in weak magnetization in the 1 ML LNO adjacent to the interface. △ Less

Submitted 2 April, 2019; originally announced April 2019.

Comments: 22 pages, 4 figures

Journal ref: Phys. Rev. B 100, 245132 (2019)

Evolution of electronic states and emergence of superconductivity in the polar semiconductor GeTe by doping valence-skipping In

Authors: M. Kriener, M. Sakano, M. Kamitani, M. S. Bahramy, R. Yukawa, K. Horiba, H. Kumigashira, K. Ishizaka, Y. Tokura, Y. Taguchi

Abstract: GeTe is a chemically simple IV-VI semiconductor which bears a rich plethora of different physical properties induced by doping and external stimuli. These include, among others, ferromagnetism, ferroelectricity, phase-change memory functionality, and comparably large thermoelectric figure of merits. Here we report a superconductor - semiconductor - superconductor transition controlled by finely-tu… ▽ More GeTe is a chemically simple IV-VI semiconductor which bears a rich plethora of different physical properties induced by doping and external stimuli. These include, among others, ferromagnetism, ferroelectricity, phase-change memory functionality, and comparably large thermoelectric figure of merits. Here we report a superconductor - semiconductor - superconductor transition controlled by finely-tuned In doping. Our results moreover show the existence of a critical doping concentration around $x = 0.12$ in Ge$_{1-x}$In$_{x}$Te, where various properties take either an extremum or change their characters: The structure changes from polarly-rhombohedral to cubic, the resistivity sharply increases by orders of magnitude, the type of charge carriers changes from holes to electrons, and the density of states diminishes at the dawn of an emerging superconducting phase. By core-level photoemission spectroscopy we find indications of a change in the In-valence state from In$^{3+}$ to In$^{1+}$ with increasing $x$, suggesting that this system is a new promising playground to probe valence fluctuations and their possible impact on superconductivity. △ Less

Submitted 24 January, 2019; originally announced January 2019.

Comments: Main text (4 Figures) + Supplement(9 Figures)

Journal ref: Phys. Rev. Lett. 124, 047002 (2020)

Origins of thermal spin depolarization in half-metallic ferromagnet CrO$_2$

Authors: H. Fujiwara, K. Terashima, M. Sunagawa, Y. Yano, T. Nagayama, T. Fukura, F. Yoshii, Y. Matsuura, M. Ogata, T. Wakita, K. Yaji, A. Harasawa, K. Kuroda, S. Shin, K. Horiba, H. Kumigashira, Y. Muraoka, T. Yokoya

Abstract: Using high-resolution spin-resolved photoemission spectroscopy, we observed a thermal spin depolarization to which all spin-polarized electrons contribute. Furthermore we observed a distinct minority spin state near the Fermi level and a corresponding depolarization that seldom contributes to demagnetization. The origin of this depolarization has been identified as the many-body effect characteris… ▽ More Using high-resolution spin-resolved photoemission spectroscopy, we observed a thermal spin depolarization to which all spin-polarized electrons contribute. Furthermore we observed a distinct minority spin state near the Fermi level and a corresponding depolarization that seldom contributes to demagnetization. The origin of this depolarization has been identified as the many-body effect characteristics of half-metallic ferromagnets. Our investigation opens an experimental field of itinerant ferromagnetic physics focusing on phenomena with sub-meV energy scale. △ Less

Submitted 19 December, 2018; originally announced December 2018.

Comments: 19 pages, 10 figures

Journal ref: Phys. Rev. Lett. 121, 257201 (2018)

Growth and physical properties of Ce(O,F)Sb(S,Se)2 single crystals with site-selected chalcogen atoms

Authors: Masanori Nagao, Masashi Tanaka, Akira Miura, Miho Kitamura, Koji Horiba, Satoshi Watauchi, Yoshihiko Takano, Hiroshi Kumigashira, Isao Tanaka

Abstract: Ce(O,F)Sb(S,Se)2 single crystals were successfully grown using a CsCl/KCl flux method. The obtained crystals have a plate-like shape with the typical size of 1-2 mm and well-developed ab-plane, which enables X-ray single crystal structural analysis. The Ce(O,F)Sb(S,Se)2 crystallizes in a monoclinic space group, P21/m, with lattice parameters of a = 4.121(7) A, b = 4.109(7) A, c = 13.233(15) A, bet… ▽ More Ce(O,F)Sb(S,Se)2 single crystals were successfully grown using a CsCl/KCl flux method. The obtained crystals have a plate-like shape with the typical size of 1-2 mm and well-developed ab-plane, which enables X-ray single crystal structural analysis. The Ce(O,F)Sb(S,Se)2 crystallizes in a monoclinic space group, P21/m, with lattice parameters of a = 4.121(7) A, b = 4.109(7) A, c = 13.233(15) A, beta = 97.94(7) deg. It is composed of alternate stacking of Ce-(O,F) and Sb-SSe layers, and the Sb-SSe layer includes selective occupation of Se atoms in its in-plane site. The valence state of Ce is estimated to be Ce3+ by X-ray absorption fine spectroscopy analysis. The single crystals show an insulating behavior, and a magnetic ordering around 6 K. △ Less

Submitted 11 December, 2018; originally announced December 2018.

Comments: 27 pages, 7 figures, 3 Tables

Journal ref: Solid State Communications vol.289(2019)38-42

Emergence of metallic monoclinic states of VO$_2$ films induced by K deposition

Authors: Daisuke Shiga, Makoto Minohara, Miho Kitamura, Ryu Yukawa, Koji Horiba, Hiroshi Kumigashira

Abstract: In order to study the origin of metallization of VO$_2$ induced by electron injection, we deposit K atoms onto the surface of VO$_2$ films grown on TiO$_2$ (001) substrates, and we investigate the change in the electronic and crystal structures using ${in~situ}$ photoemission spectroscopy and x-ray absorption spectroscopy (XAS). The deposition of K atoms onto a surface of insulating monoclinic VO… ▽ More In order to study the origin of metallization of VO$_2$ induced by electron injection, we deposit K atoms onto the surface of VO$_2$ films grown on TiO$_2$ (001) substrates, and we investigate the change in the electronic and crystal structures using ${in~situ}$ photoemission spectroscopy and x-ray absorption spectroscopy (XAS). The deposition of K atoms onto a surface of insulating monoclinic VO$_2$ leads to a phase transition from insulator to metal. In this metallization state, the V-V dimerization characteristic to the monoclinic phase of VO$_2$ still exists, as revealed by the polarization dependence of the XAS spectra. Furthermore, the monoclinic metal undergoes a transition to a monoclinic insulator with decrease in temperature, and to a rutile metal with increase in temperature. These results indicate the existence of a metallic monoclinic phase around the boundary between the insulating monoclinic and metallic rutile phases in the case of electron-doped VO$_2$. △ Less

Submitted 25 November, 2018; originally announced November 2018.

Comments: 20 pages, 5 figures

Observation of Chiral Fermions with a Large Topological Charge and and Associated Fermi-Arc Surface States in CoSi

Authors: Daichi Takane, Zhiwei Wang, Seigo Souma, Kosuke Nakayama, Takechika Nakamura, Hikaru Oinuma, Yuki Nakata, Hideaki Iwasawa, Cephise Cacho, Timur Kim, Kouji Horiba, Hiroshi Kumigashira, Takashi Takahashi, Yoichi Ando, Takafumi Sato

Abstract: Topological semimetals materialize a new state of quantum matter where massless fermions protected by a specific crystal symmetry host exotic quantum phenomena. Distinct from well-known Dirac and Weyl fermions, structurally-chiral topological semimetals are predicted to host new types of massless fermions characterized by a large topological charge, whereas such exotic fermions are yet to be exper… ▽ More Topological semimetals materialize a new state of quantum matter where massless fermions protected by a specific crystal symmetry host exotic quantum phenomena. Distinct from well-known Dirac and Weyl fermions, structurally-chiral topological semimetals are predicted to host new types of massless fermions characterized by a large topological charge, whereas such exotic fermions are yet to be experimentally established. Here, by using angle-resolved photoemission spectroscopy, we experimentally demonstrate that a transition-metal silicide CoSi hosts two types of chiral topological fermions, spin-1 chiral fermion and double Weyl fermion, in the center and corner of the bulk Brillouin zone, respectively. Intriguingly, we found that the bulk Fermi surfaces are purely composed of the energy bands related to these fermions. We also find the surface states connecting the Fermi surfaces associated with these fermions, suggesting the existence of the predicted Fermi-arc surface states. Our result provides the first experimental evidence for the chiral topological fermions beyond Dirac and Weyl fermions in condensed-matter systems, and paves the pathway toward realizing exotic electronic properties associated with unconventional chiral fermions. △ Less

Submitted 8 November, 2018; v1 submitted 4 September, 2018; originally announced September 2018.

Comments: 6 pages, 4 figures (paper proper) + 4 pages, 4 figures (supplemental material)

Journal ref: Phys. Rev. Lett. 122, 076402 (2019)

Observation of a Dirac nodal line in AlB2

Authors: Daichi Takane, Seigo Souma, Kosuke Nakayama, Takechika Nakamura, Hikaru Oinuma, Kentaro Hori, Kouji Horiba, Hiroshi Kumigashira, Noriaki Kimura, Takashi Takahashi, Takafumi Sato

Abstract: We have performed angle-resolved photoemission spectroscopy of AlB2 which is isostructural to high-temperature superconductor MgB2. Using soft-x-ray photons, we accurately determined the three-dimensional bulk band structure and found a highly anisotropic Dirac-cone band at the K point in the bulk hexagonal Brillouin zone. This band disperses downward on approaching the H point while keeping its d… ▽ More We have performed angle-resolved photoemission spectroscopy of AlB2 which is isostructural to high-temperature superconductor MgB2. Using soft-x-ray photons, we accurately determined the three-dimensional bulk band structure and found a highly anisotropic Dirac-cone band at the K point in the bulk hexagonal Brillouin zone. This band disperses downward on approaching the H point while keeping its degeneracy at the Dirac point, producing a characteristic Dirac nodal line along the KH line. We also found that the band structure of AlB2 is regarded as a heavily electron-doped version of MgB2 and is therefore well suited for fully visualizing the predicted Dirac nodal line. The present results suggest that (Al,Mg)B2 system is a promising platform for studying the interplay among Dirac nodal line, carrier doping, and possible topological superconducting properties. △ Less

Submitted 18 July, 2018; v1 submitted 3 July, 2018; originally announced July 2018.

Comments: 6 pages, 3 figures

Journal ref: Phys. Rev. B 98, 041105 (2018)

Electronic properties across metal-insulator transition in β-pyrochlore-type CsW2O6 epitaxial films

Authors: Takuto Soma, Kohei Yoshimatsu, Koji Horiba, Hiroshi Kumigashira, Akira Ohtomo

Abstract: In CsW2O6, which undergoes a metal-insulator transition (MIT) at 213 K, the emergence of exotic properties associated with rattling motion of Cs is expected owing to its characteristic β-pyrochlore-type structure. However, a hurdle for crystal growth hampers elucidation of detailed properties and mechanisms of the MIT. Here we report on the epitaxial growth of β-pyrochlore-type CsW2O6 films and th… ▽ More In CsW2O6, which undergoes a metal-insulator transition (MIT) at 213 K, the emergence of exotic properties associated with rattling motion of Cs is expected owing to its characteristic β-pyrochlore-type structure. However, a hurdle for crystal growth hampers elucidation of detailed properties and mechanisms of the MIT. Here we report on the epitaxial growth of β-pyrochlore-type CsW2O6 films and their electronic properties across the MIT. Using pulsed-laser deposi-tion technique, we grew single-crystalline CsW2O6 films exhibiting remarkably lower resistivity compared with a poly-crystalline bulk and sharp MIT around 200 K. Negative magnetoresistance and positive Hall coefficient were found, which became pronounced below 200 K. The valence-band and core-levels photoemission spectra indicated the drastic changes across the MIT. In the valence band photoemission spectrum, the finite density of states was observed at the Fermi level in the metallic phase. In contrast, an energy gap appeared in the insulating phase. The split of W 4f core-level spectrum suggested the charge disproportionation of W5+ and W6+ in the insulating phase. The change of spectral shape in the Cs 4d core levels reflected the rattling motion of Cs+ cations. These results strongly suggest that CsW2O6 is a novel material, in which MIT is driven by the charge disproportionation associated with the rattling motion. △ Less

Submitted 12 June, 2018; originally announced June 2018.

Comments: 8 pages, 6 figures

Journal ref: Phys. Rev. Materials 2, 115003 (2018)

Giant Rashba splitting of quasi-1D surface states on Bi/InAs(110)-(2$\times$1)

Authors: T. Nakamura, Y. Ohtsubo, Y. Yamashita, S. Ideta, K. Tanaka, K. Yaji, A. Harasawa, S. Shin, F. Komori, R. Yukawa, K. Horiba, H. Kumigashira, S. Kimura

Abstract: Electronic states on the Bi/InAs(110)-(2$\times$1) surface and its spin-polarized structure are revealed by angle-resolved photoelectron spectroscopy (ARPES), spin-resolved ARPES, and density-functional-theory calculation. The surface state showed quasi-one-dimensional (Q1D) dispersion and a nearly metallic character; the top of the hole-like surface band is just below the Fermi level. The size of… ▽ More Electronic states on the Bi/InAs(110)-(2$\times$1) surface and its spin-polarized structure are revealed by angle-resolved photoelectron spectroscopy (ARPES), spin-resolved ARPES, and density-functional-theory calculation. The surface state showed quasi-one-dimensional (Q1D) dispersion and a nearly metallic character; the top of the hole-like surface band is just below the Fermi level. The size of the Rashba parameter ($α_{\rm R}$) reached quite a large value ($\sim$5.5 eVÅ). The present result would provide a fertile playground for further studies of the exotic electronic phenomena in 1D or Q1D systems with the spin-split electronic states as well as for advanced spintronic devices. △ Less

Submitted 4 August, 2018; v1 submitted 19 April, 2018; originally announced April 2018.

Comments: 8 pages (double column), 7 figures and 1 table

Journal ref: Phys. Rev. B 98, 075431 (2018)

Non-trivial surface states of samarium hexaboride at the (111) surface

Authors: Y. Ohtsubo, Y. Yamashita, K. Hagiwara, S. Ideta, K. Tanaka, R. Yukawa, K. Horiba, H. Kumigashira, K. Miyamoto, T. Okuda, W. Hirano, F. Iga, S. Kimura

Abstract: The peculiar metallic electronic states observed in the Kondo insulator, samarium hexaboride (SmB$_6$), has stimulated considerable attention among those studying non-trivial electronic phenomena. However, experimental studies of these states have led to controversial conclusions mainly to the difficulty and inhomogeneity of the SmB$_6$ crystal surface. Here, we show the detailed electronic struct… ▽ More The peculiar metallic electronic states observed in the Kondo insulator, samarium hexaboride (SmB$_6$), has stimulated considerable attention among those studying non-trivial electronic phenomena. However, experimental studies of these states have led to controversial conclusions mainly to the difficulty and inhomogeneity of the SmB$_6$ crystal surface. Here, we show the detailed electronic structure of SmB$_6$ with angle-resolved photoelectron spectroscopy measurements of the three-fold (111) surface where only two inequivalent time-reversal-invariant momenta (TRIM) exist. We observe the metallic two-dimensional state was dispersed across the bulk Kondo gap. Its helical in-plane spin polarisation around the surface TRIM suggests that SmB$_6$ is topologically non-trivial, according to the topological classification theory for weakly correlated systems. Based on these results, we propose a simple picture of the controversial topological classification of SmB$_6$. △ Less

Submitted 25 April, 2019; v1 submitted 26 March, 2018; originally announced March 2018.

Comments: 34 pages, 4 figures for main text; 9 figures for supplementary material

Journal ref: Nature Communicationsvolume 10, Article number: 2298 (2019)