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Programmable activation of quantum emitters in high-purity silicon with focused carbon ion beams
Authors:
M. Hollenbach,
N. Klingner,
P. Mazarov,
W. Pilz,
A. Nadzeyka,
F. Mayer,
N. V. Abrosimov,
L. Bischoff,
G. Hlawacek,
M. Helm,
G. V. Astakhov
Abstract:
Carbon implantation at the nanoscale is highly desired for the engineering of defect-based qubits in a variety of materials, including silicon, diamond, SiC and hBN. However, the lack of focused carbon ion beams does not allow for the full disclosure of their potential for application in quantum technologies. Here, we develop and use a carbon source for focused ion beams for the simultaneous creat…
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Carbon implantation at the nanoscale is highly desired for the engineering of defect-based qubits in a variety of materials, including silicon, diamond, SiC and hBN. However, the lack of focused carbon ion beams does not allow for the full disclosure of their potential for application in quantum technologies. Here, we develop and use a carbon source for focused ion beams for the simultaneous creation of two types of quantum emitters in silicon, the W and G centers. Furthermore, we apply a multi-step implantation protocol for the programmable activation of the G centers with sub-100- nm resolution. This approach provides a route for significant enhancement of the creation yield of single G centers in carbon-free silicon wafers. Our experimental demonstration is an important step towards nanoscale engineering of telecom quantum emitters in silicon of high crystalline quality and isotope purity.
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Submitted 30 April, 2024;
originally announced April 2024.
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Dynamical Reorientation of Spin Multipoles in Silicon Carbide by Transverse Magnetic Fields
Authors:
A. Hernández-Mínguez,
A. V. Poshakinskiy,
M. Hollenbach,
P. V. Santos,
G. V. Astakhov
Abstract:
The long-lived and optically addressable high-spin state of the negatively charged silicon vacancy ($\mathrm{V_{Si}}$) in silicon carbide makes it a promising system for applications in quantum technologies. Most studies of its spin dynamics have been performed in external magnetic fields applied along the symmetry axis. Here, we find that the application of weak magnetic fields perpendicular to t…
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The long-lived and optically addressable high-spin state of the negatively charged silicon vacancy ($\mathrm{V_{Si}}$) in silicon carbide makes it a promising system for applications in quantum technologies. Most studies of its spin dynamics have been performed in external magnetic fields applied along the symmetry axis. Here, we find that the application of weak magnetic fields perpendicular to the symmetry axis leads to nontrivial behavior caused by dynamical reorientation of the $\mathrm{V_{Si}}$ spin multipole under optical excitation. Particularly, we observe the inversion of the quadrupole spin polarization in the excited state and appearance of the dipole spin polarization in the ground state. The latter is much higher than thermal polarization and cannot be induced solely by optical excitation. Our theoretical calculations reproduce well all sharp features in the spin resonance spectra, and shine light on the complex dynamics of spin multipoles in these kinds of solid-state systems.
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Submitted 11 April, 2024;
originally announced April 2024.
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Ultralong-term high-density data storage with atomic defects in SiC
Authors:
M. Hollenbach,
C. Kasper,
D. Erb,
L. Bischoff,
G. Hlawacek,
H. Kraus,
W. Kada,
T. Ohshima,
M. Helm,
S. Facsko,
V. Dyakonov,
G. V. Astakhov
Abstract:
There is an urgent need to increase the global data storage capacity, as current approaches lag behind the exponential growth of data generation driven by the Internet, social media and cloud technologies. In addition to increasing storage density, new solutions should provide long-term data archiving that goes far beyond traditional magnetic memory, optical disks and solid-state drives. Here, we…
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There is an urgent need to increase the global data storage capacity, as current approaches lag behind the exponential growth of data generation driven by the Internet, social media and cloud technologies. In addition to increasing storage density, new solutions should provide long-term data archiving that goes far beyond traditional magnetic memory, optical disks and solid-state drives. Here, we propose a concept of energy-efficient, ultralong, high-density data archiving based on optically active atomic-size defects in a radiation resistance material, silicon carbide (SiC). The information is written in these defects by focused ion beams and read using photoluminescence or cathodoluminescence. The temperature-dependent deactivation of these defects suggests a retention time minimum over a few generations under ambient conditions. With near-infrared laser excitation, grayscale encoding and multi-layer data storage, the areal density corresponds to that of Blu-ray discs. Furthermore, we demonstrate that the areal density limitation of conventional optical data storage media due to the light diffraction can be overcome by focused electron-beam excitation.
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Submitted 28 October, 2023;
originally announced October 2023.
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Identification of acoustically induced spin resonances of Si vacancy centers in 4H-SiC
Authors:
T. Vasselon,
A. Hernández-Mínguez,
M. Hollenbach,
G. V. Astakhov,
P. V. Santos
Abstract:
The long-lived and optically addressable spin states of silicon vacancies ($\mathrm{V}_\mathrm{Si}$) in 4H-SiC make them promising qubits for quantum communication and sensing. These color centers can be created in both the hexagonal (V1) and in the cubic (V2) local crystallographic environments of the 4H-SiC host. While the spin of the V2 center can be efficiently manipulated by optically detecte…
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The long-lived and optically addressable spin states of silicon vacancies ($\mathrm{V}_\mathrm{Si}$) in 4H-SiC make them promising qubits for quantum communication and sensing. These color centers can be created in both the hexagonal (V1) and in the cubic (V2) local crystallographic environments of the 4H-SiC host. While the spin of the V2 center can be efficiently manipulated by optically detected magnetic resonance at room temperature, spin control of the V1 centers above cryogenic temperatures has so far remained elusive. Here, we show that the dynamic strain of surface acoustic waves can overcome this limitation and efficiently excite magnetic resonances of V1 centers up to room temperature. Based on the width and temperature dependence of the acoustically induced spin resonances of the V1 centers, we attribute them to transitions between spin sublevels in the excited state. The acoustic spin control of both kinds of $\mathrm{V}_\mathrm{Si}$ centers in their excited states opens new ways for applications in quantum technologies based on spin-optomechanics.
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Submitted 25 August, 2023; v1 submitted 15 December, 2022;
originally announced December 2022.
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Nonlinear magnon control of atomic spin defects in scalable quantum devices
Authors:
Mauricio Bejarano,
Francisco J. T. Goncalves,
Toni Hache,
Michael Hollenbach,
Christopher Heins,
Tobias Hula,
Lukas Körber,
Jakob Heinze,
Yonder Berencén,
Manfred Helm,
Jürgen Fassbender,
Georgy V. Astakhov,
Helmut Schultheiss
Abstract:
Ongoing efforts in quantum engineering have recently focused on integrating magnonics into hybrid quantum architectures for novel functionalities. While hybrid magnon-quantum spin systems have been demonstrated with nitrogen-vacancy (NV) centers in diamond, they have remained elusive on the technologically promising silicon carbide (SiC) platform mainly due to difficulties in finding a resonance o…
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Ongoing efforts in quantum engineering have recently focused on integrating magnonics into hybrid quantum architectures for novel functionalities. While hybrid magnon-quantum spin systems have been demonstrated with nitrogen-vacancy (NV) centers in diamond, they have remained elusive on the technologically promising silicon carbide (SiC) platform mainly due to difficulties in finding a resonance overlap between the magnonic system and the spin centers. Here we circumvent this challenge by harnessing nonlinear magnon scattering processes in a magnetic vortex to access magnon modes that overlap in frequency with silicon-vacancy ($\textrm{V}_{\mathrm{Si}}$) spin transitions in SiC. Our results offer a route to develop hybrid systems that benefit from marrying the rich nonlinear dynamics of magnons with the advantageous properties of SiC for scalable quantum technologies.
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Submitted 18 August, 2022;
originally announced August 2022.
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Wafer-scale nanofabrication of telecom single-photon emitters in silicon
Authors:
M. Hollenbach,
N. Klingner,
N. S. Jagtap,
L. Bischoff,
C. Fowley,
U. Kentsch,
G. Hlawacek,
A. Erbe,
N. V. Abrosimov,
M. Helm,
Y. Berencén,
G. V. Astakhov
Abstract:
A highly promising route to scale millions of qubits is to use quantum photonic integrated circuits (PICs), where deterministic photon sources, reconfigurable optical elements, and single-photon detectors are monolithically integrated on the same silicon chip. The isolation of single-photon emitters, such as the G centers and W centers, in the optical telecommunication O-band, has recently been re…
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A highly promising route to scale millions of qubits is to use quantum photonic integrated circuits (PICs), where deterministic photon sources, reconfigurable optical elements, and single-photon detectors are monolithically integrated on the same silicon chip. The isolation of single-photon emitters, such as the G centers and W centers, in the optical telecommunication O-band, has recently been realized in silicon. In all previous cases, however, single-photon emitters were created uncontrollably in random locations, preventing their scalability. Here, we report the controllable fabrication of single G and W centers in silicon wafers using focused ion beams (FIB) with a probability exceeding 50%. We also implement a scalable, broad-beam implantation protocol compatible with the complementary-metal-oxide-semiconductor (CMOS) technology to fabricate single telecom emitters at desired positions on the nanoscale. Our findings unlock a clear and easily exploitable pathway for industrial-scale photonic quantum processors with technology nodes below 100 nm.
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Submitted 27 April, 2022;
originally announced April 2022.
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A photonic platform hosting telecom photon emitters in silicon
Authors:
Michael Hollenbach,
Nagesh S. Jagtap,
Ciarán Fowley,
Juan Baratech,
Verónica Guardia-Arce,
Ulrich Kentsch,
Anna Eichler-Volf,
Nikolay V. Abrosimov,
Artur Erbe,
ChaeHo Shin,
Hakseong Kim,
Manfred Helm,
Woo Lee,
Georgy V. Astakhov,
Yonder Berencén
Abstract:
Silicon, a ubiquitous material in modern computing, is an emerging platform for realizing a source of indistinguishable single-photons on demand. The integration of recently discovered single-photon emitters in silicon into photonic structures, is advantageous to exploit their full potential for integrated photonic quantum technologies. Here, we show the integration of telecom photon emitters in a…
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Silicon, a ubiquitous material in modern computing, is an emerging platform for realizing a source of indistinguishable single-photons on demand. The integration of recently discovered single-photon emitters in silicon into photonic structures, is advantageous to exploit their full potential for integrated photonic quantum technologies. Here, we show the integration of telecom photon emitters in a photonic platform consisting of silicon nanopillars. We developed a CMOS-compatible nanofabrication method, enabling the production of thousands of individual nanopillars per square millimeter with state-of-the-art photonic-circuit pitch, all the while being free of fabrication-related radiation damage defects. We found a waveguiding effect of the 1278 nm-G center emission along individual pillars accompanied by improved brightness, photoluminescence signal-to-noise ratio and photon extraction efficiency compared to that of bulk silicon. These results unlock clear pathways to monolithically integrating single-photon emitters into a photonic platform at a scale that matches the required pitch of quantum photonic circuits.
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Submitted 5 December, 2021;
originally announced December 2021.
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Inverted fine structure of a 6H-SiC qubit enabling robust spin-photon interface
Authors:
I. D. Breev,
Z. Shang,
A. V. Poshakinskiy,
H. Singh,
Y. Berencén,
M. Hollenbach,
S. S. Nagalyuk,
E. N. Mokhov,
R. A. Babunts,
P. G. Baranov,
D. Suter,
S. A. Tarasenko,
G. V. Astakhov,
A. N. Anisimov
Abstract:
Optically controllable solid-state spin qubits are one of the basic building blocks for applied quantum technology. Efficient extraction of emitted photons and a robust spin-photon interface are crucial for the realization of quantum sensing protocols and essential for the implementation of quantum repeaters. Though silicon carbide (SiC) is a very promising material platform hosting highly-coheren…
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Optically controllable solid-state spin qubits are one of the basic building blocks for applied quantum technology. Efficient extraction of emitted photons and a robust spin-photon interface are crucial for the realization of quantum sensing protocols and essential for the implementation of quantum repeaters. Though silicon carbide (SiC) is a very promising material platform hosting highly-coherent silicon vacancy spin qubits, a drawback for their practical application is the unfavorable ordering of the electronic levels in the optically excited state. Here, we demonstrate that due to polytypism of SiC, a particular type of silicon vacancy qubits in 6H-SiC possesses an unusual inverted fine structure. This results in the directional emission of light along the hexagonal crystallographic axis, making photon extraction more efficient and integration into photonic structures technologically straightforward. From the angular polarization dependencies of the emission, we reconstruct the spatial symmetry and determine the optical selection rules depending on the local deformation and spin-orbit interaction, enabling direct implementation of robust spin-photon entanglement schemes. Furthermore, the inverted fine structure leads to unexpected behavior of the spin readout contrast. It vanishes and recovers with lattice cooling due to two competing optical spin pumping mechanisms. Our experimental and theoretical approaches provide a deep insight into the optical and spin properties of atomic-scale qubits in SiC required for quantum communication and distributed quantum information processing.
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Submitted 14 July, 2021;
originally announced July 2021.
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Acoustically induced coherent spin trapping
Authors:
A. Hernández-Mínguez,
A. V. Poshakinskiy,
M. Hollenbach,
P. V. Santos,
G. V. Astakhov
Abstract:
Hybrid spin-optomechanical quantum systems offer high flexibility, integrability and applicability for quantum science and technology. Particularly, on-chip surface acoustic waves (SAWs) can efficiently drive spin transitions in the ground states (GSs) of atomic-scale, color centre qubits, which are forbidden in case of the more frequently used electromagnetic fields. Here, we demonstrate that str…
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Hybrid spin-optomechanical quantum systems offer high flexibility, integrability and applicability for quantum science and technology. Particularly, on-chip surface acoustic waves (SAWs) can efficiently drive spin transitions in the ground states (GSs) of atomic-scale, color centre qubits, which are forbidden in case of the more frequently used electromagnetic fields. Here, we demonstrate that strain-induced spin interactions within their optically excited state (ES) can exceed by two orders of magnitude the ones within the GS. This gives rise to novel physical phenomena, such as the acoustically induced coherent spin trapping (CST) unvealed here. The CST manifests itself as the spin preservation along one particular direction under the coherent drive of the GS and ES by the same acoustic field. Our findings provide new opportunities for the coherent control of spin qubits with dynamically generated strain fields that can lead towards the realization of future spin-acoustic quantum devices.
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Submitted 7 April, 2021;
originally announced April 2021.
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Mapping the stray fields of a nanomagnet using spin qubits in SiC
Authors:
M. Bejarano,
F. J. T. Goncalves,
M. Hollenbach,
T. Hache,
T. Hula,
Y. Berencén,
J. Fassbender,
M. Helm,
G. V. Astakhov,
H. Schultheiss
Abstract:
We report the use of optically addressable spin qubits in SiC to probe the magnetic stray fields generated by a ferromagnetic microstructure lithographically patterned on the surface of a SiC crystal. The stray fields cause shifts in the resonance frequency of the spin centers. The spin resonance is driven by a micrometer-sized microwave antenna patterned adjacent to the magnetic element. The patt…
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We report the use of optically addressable spin qubits in SiC to probe the magnetic stray fields generated by a ferromagnetic microstructure lithographically patterned on the surface of a SiC crystal. The stray fields cause shifts in the resonance frequency of the spin centers. The spin resonance is driven by a micrometer-sized microwave antenna patterned adjacent to the magnetic element. The patterning of the antenna is done to ensure that the driving microwave fields are delivered locally and more efficiently compared to conventional, millimeter-sized circuits. A clear difference in the resonance frequency of the spin centers in SiC is observed at various distances to the magnetic element, for two different magnetic states. Our results offer a wafer-scale platform to develop hybrid magnon-quantum applications by deploying local microwave fields and the stray field landscape at the micrometer lengthscale.
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Submitted 1 September, 2020;
originally announced September 2020.
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Engineering telecom single-photon emitters in silicon for scalable quantum photonics
Authors:
M. Hollenbach,
Y. Berencén,
U. Kentsch,
M. Helm,
G. V. Astakhov
Abstract:
We create and isolate single-photon emitters with a high brightness approaching $10^5$ counts per second in commercial silicon-on-insulator (SOI) wafers. The emission occurs in the infrared spectral range with a spectrally narrow zero phonon line in the telecom O-band and shows a high photostability even after days of continuous operation. The origin of the emitters is attributed to one of the car…
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We create and isolate single-photon emitters with a high brightness approaching $10^5$ counts per second in commercial silicon-on-insulator (SOI) wafers. The emission occurs in the infrared spectral range with a spectrally narrow zero phonon line in the telecom O-band and shows a high photostability even after days of continuous operation. The origin of the emitters is attributed to one of the carbon-related color centers in silicon, the so-called G center, allowing purification with the $^{12}$C and $^{28}$Si isotopes. Furthermore, we envision a concept of a highly-coherent scalable quantum photonic platform, where single-photon sources, waveguides and detectors are integrated on a SOI chip. Our results provide a route towards the implementation of quantum processors, repeaters and sensors compatible with the present-day silicon technology.
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Submitted 21 August, 2020;
originally announced August 2020.
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Anisotropic Spin-Acoustic Resonance in Silicon Carbide at Room Temperature
Authors:
A. Hernández-Mínguez,
A. V. Poshakinskiy,
M. Hollenbach,
P. V. Santos,
G. V. Astakhov
Abstract:
We report on acoustically driven spin resonances in atomic-scale centers in silicon carbide at room temperature. Specifically, we use a surface acoustic wave cavity to selectively address spin transitions with magnetic quantum number differences of $\pm$1 and $\pm$2 in the absence of external microwave electromagnetic fields. These spin-acoustic resonances reveal a non-trivial dependence on the st…
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We report on acoustically driven spin resonances in atomic-scale centers in silicon carbide at room temperature. Specifically, we use a surface acoustic wave cavity to selectively address spin transitions with magnetic quantum number differences of $\pm$1 and $\pm$2 in the absence of external microwave electromagnetic fields. These spin-acoustic resonances reveal a non-trivial dependence on the static magnetic field orientation, which is attributed to the intrinsic symmetry of the acoustic fields combined with the peculiar properties of a half-integer spin system. We develop a microscopic model of the spin-acoustic interaction, which describes our experimental data without fitting parameters. Furthermore, we predict that traveling surface waves lead to a chiral spin-acoustic resonance, which changes upon magnetic field inversion. These results establish silicon carbide as a highly-promising hybrid platform for on-chip spin-optomechanical quantum control enabling engineered interactions at room temperature.
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Submitted 2 May, 2020;
originally announced May 2020.
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Multiple Imputation Using Gaussian Copulas
Authors:
Florian M. Hollenbach,
Iavor Bojinov,
Shahryar Minhas,
Nils W. Metternich,
Shahryar Minhas,
Michael D. Ward,
Alexander Volfovsky
Abstract:
Missing observations are pervasive throughout empirical research, especially in the social sciences. Despite multiple approaches to dealing adequately with missing data, many scholars still fail to address this vital issue. In this paper, we present a simple-to-use method for generating multiple imputations using a Gaussian copula. The Gaussian copula for multiple imputation (Hoff, 2007) allows sc…
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Missing observations are pervasive throughout empirical research, especially in the social sciences. Despite multiple approaches to dealing adequately with missing data, many scholars still fail to address this vital issue. In this paper, we present a simple-to-use method for generating multiple imputations using a Gaussian copula. The Gaussian copula for multiple imputation (Hoff, 2007) allows scholars to attain estimation results that have good coverage and small bias. The use of copulas to model the dependence among variables will enable researchers to construct valid joint distributions of the data, even without knowledge of the actual underlying marginal distributions. Multiple imputations are then generated by drawing observations from the resulting posterior joint distribution and replacing the missing values. Using simulated and observational data from published social science research, we compare imputation via Gaussian copulas with two other widely used imputation methods: MICE and Amelia II. Our results suggest that the Gaussian copula approach has a slightly smaller bias, higher coverage rates, and narrower confidence intervals compared to the other methods. This is especially true when the variables with missing data are not normally distributed. These results, combined with theoretical guarantees and ease-of-use suggest that the approach examined provides an attractive alternative for applied researchers undertaking multiple imputations.
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Submitted 4 October, 2018; v1 submitted 3 November, 2014;
originally announced November 2014.
