Showing 1–10 of 10 results for author: Hida, T

Site-Specific Ground Motion Generative Model for Crustal Earthquakes in Japan Based on Generative Adversarial Networks

Authors: Yuma Matsumoto, Taro Yaoyama, Sangwon Lee, Takenori Hida, Tatsuya Itoi

Abstract: We develop a site-specific ground-motion model (GMM) for crustal earthquakes in Japan that can directly model the probability distribution of ground motion acceleration time histories based on generative adversarial networks (GANs). The proposed model can generate ground motions conditioned on moment magnitude, rupture distance, and detailed site conditions defined by the average shear-wave veloci… ▽ More We develop a site-specific ground-motion model (GMM) for crustal earthquakes in Japan that can directly model the probability distribution of ground motion acceleration time histories based on generative adversarial networks (GANs). The proposed model can generate ground motions conditioned on moment magnitude, rupture distance, and detailed site conditions defined by the average shear-wave velocity in the top 5 m, 10 m, and 20 m ($V_{\mathrm{S}5}$, $V_{\mathrm{S}10}$, $V_{\mathrm{S}20}$) and the depth to shear-wave velocities of 1.0 km/s and 1.4 km/s ($Z_{1.0}$, $Z_{1.4}$). We construct the neural networks based on styleGAN2 and introduce a novel neural network architecture to generate ground motions considering the effect of source, path, and such detailed site conditions. 5% damped spectral acceleration of ground motions generated by the proposed GMM is consistent with empirical GMMs in terms of magnitude and distance scaling. The proposed GMM can also generate ground motions accounting for the shear-wave velocity profiles of surface soil with different magnitudes and distances, and represent characteristic that are not explained solely by $V_{\mathrm{S}30}$. △ Less

Submitted 24 April, 2024; originally announced April 2024.

Latent Space-Based Likelihood Estimation Using a Single Observation for Bayesian Updating of a Nonlinear Hysteretic Model

Authors: Sangwon Lee, Taro Yaoyama, Yuma Matsumoto, Takenori Hida, Tatsuya Itoi

Abstract: This study presents a novel approach to quantifying uncertainties in Bayesian model updating, which is effective in sparse or single observations. Conventional uncertainty quantification metrics such as the Euclidean and Bhattacharyya distance-based metrics are potential in scenarios with ample observations. However, their validation is limited in situations with insufficient data, particularly fo… ▽ More This study presents a novel approach to quantifying uncertainties in Bayesian model updating, which is effective in sparse or single observations. Conventional uncertainty quantification metrics such as the Euclidean and Bhattacharyya distance-based metrics are potential in scenarios with ample observations. However, their validation is limited in situations with insufficient data, particularly for nonlinear responses like post-yield behavior. Our method addresses this challenge by using the latent space of a Variational Auto-encoder (VAE), a generative model that enables nonparametric likelihood evaluation. This approach is valuable in updating model parameters based on nonlinear seismic responses of structure, wherein data scarcity is a common challenge. Our numerical experiments confirm the ability of the proposed method to accurately update parameters and quantify uncertainties using limited observations. Additionally, these numerical experiments reveal a tendency for increased information about nonlinear behavior to result in decreased uncertainty in terms of estimations. This study provides a robust tool for quantifying uncertainty in scenarios characterized by considerable uncertainty, thereby expanding the applicability of Bayesian updating methods in data-constrained environments. △ Less

Submitted 11 October, 2024; v1 submitted 4 April, 2024; originally announced April 2024.

Journal ref: ASCE-ASME Journal of Risk and Uncertainty in Engineering Systems, Part A: Civil Engineering, Vol. 10, No. 4, pp. 04024072, 2024

Proton radiation hardness of X-ray SOI pixel sensors with pinned depleted diode structure

Authors: Mitsuki Hayashida, Kouichi Hagino, Takayoshi Kohmura, Masatoshi Kitajima, Keigo Yarita, Kenji Oono, Kousuke Negishi, Takeshi G. Tsuru, Takaaki Tanaka, Hiroyuki Uchida, Kazuho Kayama, Ryota Kodama, Koji Mori, Ayaki Takeda, Yusuke Nishioka, Takahiro Hida, Masataka Yukumoto, Yasuo Arai, Ikuo Kurachi, Hisashi Kitamura, Shoji Kawahito, Keita Yasutomi

Abstract: X-ray SOI pixel sensors, "XRPIX", are being developed for the next-generation X-ray astronomical satellite, "FORCE". The XRPIX are fabricated with the SOI technology, which makes it possible to integrate a high-resistivity Si sensor and a low-resistivity Si CMOS circuit. The CMOS circuit in each pixel is equipped with a trigger function, allowing us to read out outputs only from the pixels with X-… ▽ More X-ray SOI pixel sensors, "XRPIX", are being developed for the next-generation X-ray astronomical satellite, "FORCE". The XRPIX are fabricated with the SOI technology, which makes it possible to integrate a high-resistivity Si sensor and a low-resistivity Si CMOS circuit. The CMOS circuit in each pixel is equipped with a trigger function, allowing us to read out outputs only from the pixels with X-ray signals at the timing of X-ray detection. This function thus realizes high throughput and high time resolution, which enables to employ anti-coincidence technique for background rejection. A new series of XRPIX named XRPIX6E developed with a pinned depleted diode (PDD) structure improves spectral performance by suppressing the interference between the sensor and circuit layers. When semiconductor X-ray sensors are used in space, their spectral performance is generally degraded owing to the radiation damage caused by high-energy protons. Therefore, before using an XRPIX in space, it is necessary to evaluate the extent of degradation of its spectral performance by radiation damage. Thus, we performed a proton irradiation experiment for XRPIX6E for the first time at HIMAC in the NIRS. We irradiated XRPIX6E with high-energy protons with a total dose of up to 40 krad, equivalent to 400 years of irradiation in orbit. The 40-krad irradiation degraded the energy resolution of XRPIX6E by 25 $\pm$ 3%, yielding an energy resolution of 260.1 $\pm$ 5.6 eV at the full width half maximum for 5.9 keV X-rays. However, the value satisfies the requirement for FORCE, 300 eV at 6 keV, even after the irradiation. It was also found that the PDD XRPIX has enhanced radiation hardness compared to previous XRPIX devices. In addition, we investigated the degradation of the energy resolution; it was shown that the degradation would be due to increasing energy-independent components, e.g., readout noise. △ Less

Submitted 11 August, 2021; originally announced August 2021.

Comments: 15 pages, 16 figures, accepted for publication in JATIS

Low-Energy X-ray Performance of SOI Pixel Sensors for Astronomy, "XRPIX"

Authors: Ryota Kodama, Takeshi Go Tsuru, Takaaki Tanaka, Hiroyuki Uchida, Kazuho Kayama, Yuki Amano, Ayaki Takeda, Koji Mori, Yusuke Nishioka, Masataka Yukumoto, Takahiro Hida, Yasuo Arai, Ikuo Kurachi, Takayoshi Kohmura, Kouichi Hagino, Mitsuki Hayashida, Masatoshi Kitajima, Shoji Kawahito, Keita Yasutomi, Hiroki Kamehama

Abstract: We have been developing a new type of X-ray pixel sensors, "XRPIX", allowing us to perform imaging spectroscopy in the wide energy band of 1-20 keV for the future Japanese X-ray satellite "FORCE". The XRPIX devices are fabricated with complementary metal-oxide-semiconductor silicon-on-insulator technology, and have the "Event-Driven readout mode", in which only a hit event is read out by using hit… ▽ More We have been developing a new type of X-ray pixel sensors, "XRPIX", allowing us to perform imaging spectroscopy in the wide energy band of 1-20 keV for the future Japanese X-ray satellite "FORCE". The XRPIX devices are fabricated with complementary metal-oxide-semiconductor silicon-on-insulator technology, and have the "Event-Driven readout mode", in which only a hit event is read out by using hit information from a trigger output function equipped with each pixel. This paper reports on the low-energy X-ray performance of the "XRPIX6E" device with a Pinned Depleted Diode (PDD) structure. The PDD structure especially reduces the readout noise, and hence is expected to largely improve the quantum efficiencies for low-energy X-rays. While F-K X-rays at 0.68 keV and Al-K X-rays at 1.5 keV are successfully detected in the "Frame readout mode", in which all pixels are read out serially without using the trigger output function, the device is able to detect Al-K X-rays, but not F-K X-rays in the Event-Driven readout mode. Non-uniformity is observed in the counts maps of Al-K X-rays in the Event-Driven readout mode, which is due to region-to-region variation of the pedestal voltages at the input to the comparator circuit. The lowest available threshold energy is 1.1 keV for a small region in the device where the non-uniformity is minimized. The noise of the charge sensitive amplifier at the sense node and the noise related to the trigger output function are ~$18~e^-$ (rms) and ~$13~e^-$ (rms), respectively. △ Less

Submitted 29 September, 2020; originally announced September 2020.

Comments: 8 pages, 10 figures, accepted for publication in NIMA, proceedings of the 12th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detector (HSTD12)

Radiation Damage Effects on Double-SOI Pixel Sensors for X-ray Astronomy

Authors: Kouichi Hagino, Keigo Yarita, Kousuke Negishi, Kenji Oono, Mitsuki Hayashida, Masatoshi Kitajima, Takayoshi Kohmura, Takeshi G. Tsuru, Takaaki Tanaka, Hiroyuki Uchida, Kazuho Kayama, Yuki Amano, Ryota Kodama, Ayaki Takeda, Koji Mori, Yusuke Nishioka, Masataka Yukumoto, Takahiro Hida, Yasuo Arai, Ikuo Kurachi, Tsuyoshi Hamano, Hisashi Kitamura

Abstract: The X-ray SOI pixel sensor onboard the FORCE satellite will be placed in the low earth orbit and will consequently suffer from the radiation effects mainly caused by geomagnetically trapped cosmic-ray protons. Based on previous studies on the effects of radiation on SOI pixel sensors, the positive charges trapped in the oxide layer significantly affect the performance of the sensor. To improve the… ▽ More The X-ray SOI pixel sensor onboard the FORCE satellite will be placed in the low earth orbit and will consequently suffer from the radiation effects mainly caused by geomagnetically trapped cosmic-ray protons. Based on previous studies on the effects of radiation on SOI pixel sensors, the positive charges trapped in the oxide layer significantly affect the performance of the sensor. To improve the radiation hardness of the SOI pixel sensors, we introduced a double-SOI (D-SOI) structure containing an additional middle Si layer in the oxide layer. The negative potential applied on the middle Si layer compensates for the radiation effects, due to the trapped positive charges. Although the radiation hardness of the D-SOI pixel sensors for applications in high-energy accelerators has been evaluated, radiation effects for astronomical application in the D-SOI sensors has not been evaluated thus far. To evaluate the radiation effects of the D-SOI sensor, we perform an irradiation experiment using a 6-MeV proton beam with a total dose of ~ 5 krad, corresponding to a few tens of years of in-orbit operation. This experiment indicates an improvement in the radiation hardness of the X- ray D-SOI devices. On using an irradiation of 5 krad on the D-SOI device, the energy resolution in the full-width half maximum for the 5.9-keV X-ray increases by 7 $\pm$ 2%, and the chip output gain decreases by 0.35 $\pm$ 0.09%. The physical mechanism of the gain degradation is also investigated; it is found that the gain degradation is caused by an increase in the parasitic capacitance due to the enlarged buried n-well. △ Less

Submitted 16 July, 2020; originally announced July 2020.

Comments: 7 pages, 7 figures, accepted for publication in NIM A

Development of the detector simulation framework for the Wideband Hybrid X-ray Imager onboard FORCE

Authors: Hiromasa Suzuki, Tsubasa Tamba, Hirokazu Odaka, Aya Bamba, Koichi Hagino, Ayaki Takeda, Koji Mori, Takahiro Hida, Masataka Yukumoto, Yusuke Nishioka, Takeshi G. Tsuru

Abstract: FORCE is a Japan-US space-based astronomy mission for an X-ray imaging spectroscopy in an energy range of 1--80 keV. The Wideband Hybrid X-ray Imager (WHXI), which is the main focal plane detector, will use a hybrid semiconductor imager stack composed of silicon and cadmium telluride (CdTe). The silicon imager will be a certain type of the silicon-on-insulator (SOI) pixel sensor, named the X-ray p… ▽ More FORCE is a Japan-US space-based astronomy mission for an X-ray imaging spectroscopy in an energy range of 1--80 keV. The Wideband Hybrid X-ray Imager (WHXI), which is the main focal plane detector, will use a hybrid semiconductor imager stack composed of silicon and cadmium telluride (CdTe). The silicon imager will be a certain type of the silicon-on-insulator (SOI) pixel sensor, named the X-ray pixel (XRPIX) series. Since the sensor has a small pixel size (30--36 $μ$m) and a thick sensitive region (300--500 $μ$m), understanding the detector response is not trivial and is important in order to optimize the camera design and to evaluate the scientific capabilities. We have developed a framework to simulate observations of celestial sources with semiconductor sensors. Our simulation framework was tested and validated by comparing our simulation results to laboratory measurements using the XRPIX 6H sensor. The simulator well reproduced the measurement results with reasonable physical parameters of the sensor including an electric field structure, a Coulomb repulsion effect on the carrier diffusion, and arrangement of the degraded regions. This framework is also applicable to future XRPIX updates including the one which will be part of the WHXI, as well as various types of semiconductor sensors. △ Less

Submitted 15 July, 2020; originally announced July 2020.

Comments: 7 pages, 5 figures, proceedings of the "12th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors (HSTD12)", accepted for publication in Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Sub-pixel Response of Double-SOI Pixel Sensors for X-ray Astronomy

Authors: K. Hagino, K. Negishi, K. Oono, K. Yarita, T. Kohmura, T. G. Tsuru, T. Tanaka, S. Harada, K. Kayama, H. Matsumura, K. Mori, A. Takeda, Y. Nishioka, M. Yukumoto, K. Fukuda, T. Hida, Y. Arai, I. Kurachi, S. Kishimoto

Abstract: We have been developing the X-ray silicon-on-insulator (SOI) pixel sensor called XRPIX for future astrophysical satellites. XRPIX is a monolithic active pixel sensor consisting of a high-resistivity Si sensor, thin SiO$_2$ insulator, and CMOS pixel circuits that utilize SOI technology. Since XRPIX is capable of event-driven readouts, it can achieve high timing resolution greater than… ▽ More We have been developing the X-ray silicon-on-insulator (SOI) pixel sensor called XRPIX for future astrophysical satellites. XRPIX is a monolithic active pixel sensor consisting of a high-resistivity Si sensor, thin SiO$_2$ insulator, and CMOS pixel circuits that utilize SOI technology. Since XRPIX is capable of event-driven readouts, it can achieve high timing resolution greater than $\sim 10{\rm ~μs}$, which enables low background observation by adopting the anti-coincidence technique. One of the major issues in the development of XRPIX is the electrical interference between the sensor layer and circuit layer, which causes nonuniform detection efficiency at the pixel boundaries. In order to reduce the interference, we introduce a Double-SOI (D-SOI) structure, in which a thin Si layer (middle Si) is added to the insulator layer of the SOI structure. In this structure, the middle Si layer works as an electrical shield to decouple the sensor layer and circuit layer. We measured the detector response of the XRPIX with D-SOI structure at KEK. We irradiated the X-ray beam collimated with $4{\rm ~μmφ}$ pinhole, and scanned the device with $6{\rm ~μm}$ pitch, which is 1/6 of the pixel size. In this paper, we present the improvement in the uniformity of the detection efficiency in D-SOI sensors, and discuss the detailed X-ray response and its physical origins. △ Less

Submitted 26 August, 2019; originally announced August 2019.

Comments: 12 pages, 9 figures, accepted for publication in Journal of Instrumentation

Measurement of Charge Cloud Size in X-ray SOI Pixel Sensors

Authors: Kouichi Hagino, Kenji Oono, Kousuke Negishi, Keigo Yarita, Takayoshi Kohmura, Takeshi G. Tsuru, Takaaki Tanaka, Hiroyuki Uchida, Sodai Harada, Tomoyuki Okuno, Kazuho Kayama, Yuki Amano, Hideaki Matsumura, Koji Mori, Ayaki Takeda, Yusuke Nishioka, Kohei Fukuda, Takahiro Hida, Masataka Yukumoto, Yasuo Arai, Ikuo Kurachi, Toshinobu Miyoshi, Shunji Kishimoto

Abstract: We report on a measurement of the size of charge clouds produced by X-ray photons in X-ray SOI (Silicon-On-Insulator) pixel sensor named XRPIX. We carry out a beam scanning experiment of XRPIX using a monochromatic X-ray beam at 5.0 keV collimated to $\sim 10$ $μ$m with a 4-$μ$m$φ$ pinhole, and obtain the spatial distribution of single-pixel events at a sub-pixel scale. The standard deviation of c… ▽ More We report on a measurement of the size of charge clouds produced by X-ray photons in X-ray SOI (Silicon-On-Insulator) pixel sensor named XRPIX. We carry out a beam scanning experiment of XRPIX using a monochromatic X-ray beam at 5.0 keV collimated to $\sim 10$ $μ$m with a 4-$μ$m$φ$ pinhole, and obtain the spatial distribution of single-pixel events at a sub-pixel scale. The standard deviation of charge clouds of 5.0 keV X-ray is estimated to be $σ_{\rm cloud} = 4.30 \pm 0.07$ $μ$m. Compared to the detector response simulation, the estimated charge cloud size is well explained by a combination of photoelectron range, thermal diffusion, and Coulomb repulsion. Moreover, by analyzing the fraction of multi-pixel events in various energies, we find that the energy dependence of the charge cloud size is also consistent with the simulation. △ Less

Submitted 30 May, 2019; originally announced May 2019.

Comments: 9 pages, 12 figures, accepted for publication in IEEE Transactions on Nuclear Science

Subpixel Response of SOI Pixel Sensor for X-ray Astronomy with Pinned Depleted Diode: First Result from Mesh Experiment

Authors: Kazuho Kayama, Takeshi G. Tsuru, Takaaki Tanaka, Hiroyuki Uchida, Sodai Harada, Tomoyuki Okuno, Yuki Amano, Junko S. Hiraga, Masayuki Yoshida, Yasuaki Kamata, Shotaro Sakuma, Daito Yuhi, Yukino Urabe, Hiroshi Tsunemi, Hideaki Matsumura, Shoji Kawahito, Keiichiro Kagawa, Keita Yasutomi, Sumeet Shrestha, Syunta Nakanishi, Hiroki Kamehama, Yasuo Arai, Ikuo Kurachi, Ayaki Takeda, Koji Mori , et al. (9 additional authors not shown)

Abstract: We have been developing a monolithic active pixel sensor, ``XRPIX``, for the Japan led future X-ray astronomy mission ``FORCE`` observing the X-ray sky in the energy band of 1-80 keV with angular resolution of better than 15``. XRPIX is an upper part of a stack of two sensors of an imager system onboard FORCE, and covers the X-ray energy band lower than 20 keV. The XRPIX device consists of a fully… ▽ More We have been developing a monolithic active pixel sensor, ``XRPIX``, for the Japan led future X-ray astronomy mission ``FORCE`` observing the X-ray sky in the energy band of 1-80 keV with angular resolution of better than 15``. XRPIX is an upper part of a stack of two sensors of an imager system onboard FORCE, and covers the X-ray energy band lower than 20 keV. The XRPIX device consists of a fully depleted high-resistivity silicon sensor layer for X-ray detection, a low resistivity silicon layer for CMOS readout circuit, and a buried oxide layer in between, which is fabricated with 0.2 $μ$ m CMOS silicon-on-insulator (SOI) technology. Each pixel has a trigger circuit with which we can achieve a 10 $μ$ s time resolution, a few orders of magnitude higher than that with X-ray astronomy CCDs. We recently introduced a new type of a device structure, a pinned depleted diode (PDD), in the XRPIX device, and succeeded in improving the spectral performance, especially in a readout mode using the trigger function. In this paper, we apply a mesh experiment to the XRPIX devices for the first time in order to study the spectral response of the PDD device at the subpixel resolution. We confirmed that the PDD structure solves the significant degradation of the charge collection efficiency at the pixel boundaries and in the region under the pixel circuits, which is found in the single SOI structure, the conventional type of the device structure. On the other hand, the spectral line profiles are skewed with low energy tails and the line peaks slightly shift near the pixel boundaries, which contribute to a degradation of the energy resolution. △ Less

Submitted 26 May, 2019; originally announced May 2019.

Comments: 10 pages, 7 figures, , Conference proceedings for PIXEL2018

Performance of SOI Pixel Sensors Developed for X-ray Astronomy

Authors: Takaaki Tanaka, Takeshi Go Tsuru, Hiroyuki Uchida, Sodai Harada, Tomoyuki Okuno, Kazuho Kayama, Yuki Amano, Hideaki Matsumura, Ayaki Takeda, Koji Mori, Yusuke Nishioka, Kohei Fukuda, Takahiro Hida, Masataka Yukumoto, Yasuo Arai, Ikuo Kurachi, Shoji Kawahito, Keiichiro Kagawa, Keita Yasutomi, Sumeet Shrestha, Syunta Nakanishi, Hiroki Kamehama, Takayoshi Kohmura, Kouichi Hagino, Kousuke Negishi , et al. (2 additional authors not shown)

Abstract: We have been developing monolithic active pixel sensors for X-rays based on the silicon-on-insulator technology. Our device consists of a low-resistivity Si layer for readout CMOS electronics, a high-resistivity Si sensor layer, and a SiO$_2$ layer between them. This configuration allows us both high-speed readout circuits and a thick (on the order of $100~μ{\rm m}$) depletion layer in a monolithi… ▽ More We have been developing monolithic active pixel sensors for X-rays based on the silicon-on-insulator technology. Our device consists of a low-resistivity Si layer for readout CMOS electronics, a high-resistivity Si sensor layer, and a SiO$_2$ layer between them. This configuration allows us both high-speed readout circuits and a thick (on the order of $100~μ{\rm m}$) depletion layer in a monolithic device. Each pixel circuit contains a trigger output function, with which we can achieve a time resolution of $\lesssim 10~μ{\rm s}$. One of our key development items is improvement of the energy resolution. We recently fabricated a device named XRPIX6E, to which we introduced a pinned depleted diode (PDD) structure. The structure reduces the capacitance coupling between the sensing area in the sensor layer and the pixel circuit, which degrades the spectral performance. With XRPIX6E, we achieve an energy resolution of $\sim 150$~eV in full width at half maximum for 6.4-keV X-rays. In addition to the good energy resolution, a large imaging area is required for practical use. We developed and tested XRPIX5b, which has an imaging area size of $21.9~{\rm mm} \times 13.8~{\rm mm}$ and is the largest device that we ever fabricated. We successfully obtain X-ray data from almost all the $608 \times 384$ pixels with high uniformity. △ Less

Submitted 14 December, 2018; originally announced December 2018.

Comments: 5 pages, 9 figures, submitted to Conference Record of IEEE NSS-MIC 2018