Showing 1–2 of 2 results for author: Hetterich, M
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A spintronic source of circularly polarized single photons
Authors:
Pablo Asshoff,
Andreas Merz,
Heinz Kalt,
Michael Hetterich
Abstract:
We present a spintronic single photon source which emits circularly polarized light, where the helicity is determined by an applied magnetic field. Photons are emitted from an InGaAs quantum dot inside an electrically operated spin light-emitting diode, which comprises the diluted magnetic semiconductor ZnMnSe. The circular polarization degree of the emitted light is high, reaching 83% at an appli…
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We present a spintronic single photon source which emits circularly polarized light, where the helicity is determined by an applied magnetic field. Photons are emitted from an InGaAs quantum dot inside an electrically operated spin light-emitting diode, which comprises the diluted magnetic semiconductor ZnMnSe. The circular polarization degree of the emitted light is high, reaching 83% at an applied magnetic field of 2T and 96% at 6 T. Autocorrelation traces recorded in pulsed operation mode prove the emitted light to be antibunched. The two circular polarization states could be used for representing quantum states |0> and |1> in quantum cryptography implementations.
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Submitted 6 March, 2011;
originally announced March 2011.
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Transmission electron microscopy investigation of segregation and critical floating-layer content of indium for island formation in InGaAs
Authors:
D. Litvinov,
D. Gerthsen,
A. Rosenauer,
M. Schowalter,
T. Passow,
P. Feinaeugle,
M. Hetterich
Abstract:
We have investigated InGaAs layers grown by molecular-beam epitaxy on GaAs(001) by transmission electron microscopy (TEM) and photoluminescence spectroscopy. InGaAs layers with In-concentrations of 16, 25 and 28 % and respective thicknesses of 20, 22 and 23 monolayers were deposited at 535 C. The parameters were chosen to grow layers slightly above and below the transition between the two- and t…
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We have investigated InGaAs layers grown by molecular-beam epitaxy on GaAs(001) by transmission electron microscopy (TEM) and photoluminescence spectroscopy. InGaAs layers with In-concentrations of 16, 25 and 28 % and respective thicknesses of 20, 22 and 23 monolayers were deposited at 535 C. The parameters were chosen to grow layers slightly above and below the transition between the two- and three-dimensional growth mode. In-concentration profiles were obtained from high-resolution TEM images by composition evaluation by lattice fringe analysis. The measured profiles can be well described applying the segregation model of Muraki et al. [Appl. Phys. Lett. 61 (1992) 557]. Calculated photoluminescence peak positions on the basis of the measured concentration profiles are in good agreement with the experimental ones. Evaluating experimental In-concentration profiles it is found that the transition from the two-dimensional to the three-dimensional growth mode occurs if the indium content in the In-floating layer exceeds 1.1+/-0.2 monolayers. The measured exponential decrease of the In-concentration within the cap layer on top of the islands reveals that the In-floating layer is not consumed during island formation. The segregation efficiency above the islands is increased compared to the quantum wells which is explained tentatively by strain-dependent lattice-site selection of In. In addition, In0.25Ga0.75As quantum wells were grown at different temperatures between 500 oC and 550 oC. The evaluation of concentration profiles shows that the segregation efficiency increases from R=0.65 to R=0.83.
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Submitted 8 May, 2006;
originally announced May 2006.
