Critical Currents, Pinning Forces and Irreversibility Fields in (YxTml-x)Ba2Cu3O7 Single Crystals with Columnar Defects in Fields up to 50 T
Authors:
L. Trappeniers,
J. Vanacken,
L. Weckhuysen,
K. Rosseel,
A. Yu. Didyk,
I. N. Goncharov,
L. I. Leonyuk,
W. Boon,
F. Herlach,
V. V. Moshchalkov,
Y. Bruynseraede
Abstract:
We have studied the influence of columnar defects, created by heavy-ion (Kr) irradiation with doses up to 6 10^11 Kr-ions/cm2, on the superconducting critical parameters of single crystalline (YxTm1-x)Ba2Cu3O7. Magnetisation measurements in pulsed fields up to 50 T in the temperature range 4.2 - 90 K revealed that: (i) in fields up to T the critical current Jc(H,T) is considerably enhanced and (…
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We have studied the influence of columnar defects, created by heavy-ion (Kr) irradiation with doses up to 6 10^11 Kr-ions/cm2, on the superconducting critical parameters of single crystalline (YxTm1-x)Ba2Cu3O7. Magnetisation measurements in pulsed fields up to 50 T in the temperature range 4.2 - 90 K revealed that: (i) in fields up to T the critical current Jc(H,T) is considerably enhanced and (ii) down to temperatures T ~ 40 K the irreversibility field Hirr(T) is strongly increased. The field range and magnitude of the Jc(H,T) and Hirr(T) enhancement increase with increasing irradiation dose. To interpret these observations, an effective matching field was defined. Moreover, introducing columnar defects also changes the pinning force fp qualitatively. Due to stronger pinning of flux lines by the amorphous defects, the superconducting critical parameters largely exceed those associated with the defect structures in the unirradiated as-grown material: Jc,irrad(77 K, 5 T) ^3 10* Jc,ref(77 K, 5 T).
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Submitted 24 February, 1999;
originally announced February 1999.
Magnetotransport in a pseudomorphic GaAs/GaInAs/GaAlAs heterostructure with a Si delta-doping layer
Authors:
M. van der Burgt,
V. C. Karavolas,
F. M. Peeters,
J. Singleton,
R. J. Nicholas,
F. Herlach,
J. J. Harris,
M. Van Hove,
G. Borghs
Abstract:
Magnetotransport properties of a pseudomorphic GaAs/Ga0.8In0.2As/Ga0.75Al0.25As heterostructure are investigated in pulsed magnetic fields up to 50 T and at temperatures of T=1.4 K and 4.2 K. The structure studied consists of a Si delta-layer parallel to a Ga0.8In0.2As quantum well (QW). The dark electron density of the structure is n_e=1.67x 10^16 m^-2. By illumination the density can be increa…
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Magnetotransport properties of a pseudomorphic GaAs/Ga0.8In0.2As/Ga0.75Al0.25As heterostructure are investigated in pulsed magnetic fields up to 50 T and at temperatures of T=1.4 K and 4.2 K. The structure studied consists of a Si delta-layer parallel to a Ga0.8In0.2As quantum well (QW). The dark electron density of the structure is n_e=1.67x 10^16 m^-2. By illumination the density can be increased up to a factor of 4; this way the second subband in the Ga0.8In0.2As QW can become populated as well as the Si delta-layer. The presence of electrons in the delta-layer results in drastic changes in the transport data, especially at magnetic fields beyond 30 T. The phenomena observed are interpreted as: 1) magnetic freeze-out of carriers in the delta-layer when a low density of electrons is present in the delta-layer, and 2) quantization of the electron motion in the two dimensional electron gases in both the Ga0.8In0.2As QW and the Si delta-layer in the case of high densities. These conclusions are corroborated by the numerical results of our theoretical model. We obtain a satisfactory agreement between model and experiment.
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Submitted 3 September, 1995; v1 submitted 31 August, 1995;
originally announced August 1995.
