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Recognition and 3D Localization of Pedestrian Actions from Monocular Video
Authors:
Jun Hayakawa,
Behzad Dariush
Abstract:
Understanding and predicting pedestrian behavior is an important and challenging area of research for realizing safe and effective navigation strategies in automated and advanced driver assistance technologies in urban scenes. This paper focuses on monocular pedestrian action recognition and 3D localization from an egocentric view for the purpose of predicting intention and forecasting future traj…
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Understanding and predicting pedestrian behavior is an important and challenging area of research for realizing safe and effective navigation strategies in automated and advanced driver assistance technologies in urban scenes. This paper focuses on monocular pedestrian action recognition and 3D localization from an egocentric view for the purpose of predicting intention and forecasting future trajectory. A challenge in addressing this problem in urban traffic scenes is attributed to the unpredictable behavior of pedestrians, whereby actions and intentions are constantly in flux and depend on the pedestrians pose, their 3D spatial relations, and their interaction with other agents as well as with the environment. To partially address these challenges, we consider the importance of pose toward recognition and 3D localization of pedestrian actions. In particular, we propose an action recognition framework using a two-stream temporal relation network with inputs corresponding to the raw RGB image sequence of the tracked pedestrian as well as the pedestrian pose. The proposed method outperforms methods using a single-stream temporal relation network based on evaluations using the JAAD public dataset. The estimated pose and associated body key-points are also used as input to a network that estimates the 3D location of the pedestrian using a unique loss function. The evaluation of our 3D localization method on the KITTI dataset indicates the improvement of the average localization error as compared to existing state-of-the-art methods. Finally, we conduct qualitative tests of action recognition and 3D localization on HRI's H3D driving dataset.
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Submitted 3 August, 2020;
originally announced August 2020.
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Ego-motion and Surrounding Vehicle State Estimation Using a Monocular Camera
Authors:
Jun Hayakawa,
Behzad Dariush
Abstract:
Understanding ego-motion and surrounding vehicle state is essential to enable automated driving and advanced driving assistance technologies. Typical approaches to solve this problem use fusion of multiple sensors such as LiDAR, camera, and radar to recognize surrounding vehicle state, including position, velocity, and orientation. Such sensing modalities are overly complex and costly for producti…
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Understanding ego-motion and surrounding vehicle state is essential to enable automated driving and advanced driving assistance technologies. Typical approaches to solve this problem use fusion of multiple sensors such as LiDAR, camera, and radar to recognize surrounding vehicle state, including position, velocity, and orientation. Such sensing modalities are overly complex and costly for production of personal use vehicles. In this paper, we propose a novel machine learning method to estimate ego-motion and surrounding vehicle state using a single monocular camera. Our approach is based on a combination of three deep neural networks to estimate the 3D vehicle bounding box, depth, and optical flow from a sequence of images. The main contribution of this paper is a new framework and algorithm that integrates these three networks in order to estimate the ego-motion and surrounding vehicle state. To realize more accurate 3D position estimation, we address ground plane correction in real-time. The efficacy of the proposed method is demonstrated through experimental evaluations that compare our results to ground truth data available from other sensors including Can-Bus and LiDAR.
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Submitted 5 May, 2020; v1 submitted 4 May, 2020;
originally announced May 2020.
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Spontaneous Transition to a Correlated Phase of Skyrmions Observed in Real Space
Authors:
John N. Moore,
Hikaru Iwata,
Junichiro Hayakawa,
Takaaki Mano,
Takeshi Noda,
Naokazu Shibata,
Go Yusa
Abstract:
We conduct photoluminescence microscopy that is sensitive to both electron and nuclear spin polarization to investigate the changes that occur in the magnetic ordering in the vicinity of the first integer quantum Hall state in a GaAs 2D electron system (2DES). We observe a discontinuity in the electron spin polarization and nuclear spin longitudinal relaxation time which heralds a spontaneous tran…
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We conduct photoluminescence microscopy that is sensitive to both electron and nuclear spin polarization to investigate the changes that occur in the magnetic ordering in the vicinity of the first integer quantum Hall state in a GaAs 2D electron system (2DES). We observe a discontinuity in the electron spin polarization and nuclear spin longitudinal relaxation time which heralds a spontaneous transition to a phase of magnetic skyrmions. We image in real space the spin phase domains that coexist at this transition, and observe hysteresis in their formation as a function of the 2DES's chemical potential. Based on measurements in a tilted magnetic field orientation, we found that the transition is protected by an energy gap containing the Zeeman energy, and conclude that the skyrmions here have formed as an ensemble.
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Submitted 31 May, 2018;
originally announced June 2018.
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Hyperfine-controlled domain-wall motion observed in real space and time
Authors:
John N. Moore,
Junichiro Hayakawa,
Takaaki Mano,
Takeshi Noda,
Go Yusa
Abstract:
We perform real-space imaging of propagating magnetic domains in the fractional quantum Hall system using spin-sensitive photoluminescence microscopy. The propagation is continuous and proceeds in the direction of the conventional current, i.e. opposite to the electron flow direction. The mechanism of motion is shown to be connected to polarized nuclear spins around the domain walls. The propagati…
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We perform real-space imaging of propagating magnetic domains in the fractional quantum Hall system using spin-sensitive photoluminescence microscopy. The propagation is continuous and proceeds in the direction of the conventional current, i.e. opposite to the electron flow direction. The mechanism of motion is shown to be connected to polarized nuclear spins around the domain walls. The propagation velocity increases when nuclei are depolarized, and decreases when the source-drain current generating this nuclear polarization is increased. We discuss how these phenomena may arise from spin interactions along the domain walls.
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Submitted 16 October, 2016; v1 submitted 15 September, 2016;
originally announced September 2016.
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Temperature and thickness dependence of tunneling anisotropic magnetoresistance in exchange-biased Py/IrMn/MgO/Ta stacks
Authors:
H. Reichlova,
V. Novak,
Y. Kurosaki,
M. Yamada,
H. Yamamoto,
A. Nishide,
J. Hayakawa,
H. Takahashi,
M. Marysko,
J. Wunderlich,
X. Marti,
T. Jungwirth
Abstract:
We investigate the thickness and temperature dependence of a series of Ni0:8Fe0:2/Ir0:2Mn0:8 bilayer samples with varying thickness ratio of the ferromagnet/antiferromagnet (tFM/tAFM) in order to explore the exchange coupling strengths in tunneling anisotropic magnetoresistance (TAMR) devices. Specific values of tFM/tAFM lead to four distinct scenarios with specific electric responses to moderate…
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We investigate the thickness and temperature dependence of a series of Ni0:8Fe0:2/Ir0:2Mn0:8 bilayer samples with varying thickness ratio of the ferromagnet/antiferromagnet (tFM/tAFM) in order to explore the exchange coupling strengths in tunneling anisotropic magnetoresistance (TAMR) devices. Specific values of tFM/tAFM lead to four distinct scenarios with specific electric responses to moderate magnetic fields. The characteristic dependence of the measured TAMR signal on applied voltage allows us to confirm its persistence up to room temperature despite an overlapped contribution by a thermal magnetic noise.
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Submitted 31 July, 2016;
originally announced August 2016.
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Non-equilibrium fractional quantum Hall states visualized by optically detected MRI
Authors:
John N. Moore,
Junichiro Hayakawa,
Takaaki Mano,
Takeshi Noda,
Go Yusa
Abstract:
Using photoluminescence microscopy enhanced by MRI, we visualize in real space both electron and nuclear polarization occurring in non-equilibrium FQH liquids. We observe stripe-like regions comprising FQH excited states which discretely form when the FQH liquid is excited by a source-drain current. These regions are topologically protected and deformable, and give rise to bidirectionally polarize…
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Using photoluminescence microscopy enhanced by MRI, we visualize in real space both electron and nuclear polarization occurring in non-equilibrium FQH liquids. We observe stripe-like regions comprising FQH excited states which discretely form when the FQH liquid is excited by a source-drain current. These regions are topologically protected and deformable, and give rise to bidirectionally polarized nuclear spins as spin-resolved electrons flow across their boundaries.
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Submitted 21 June, 2016;
originally announced June 2016.
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Estimation of exponential-polynomial distribution by holonomic gradient descent
Authors:
Jumpei Hayakawa,
Akimichi Takemura
Abstract:
We study holonomic gradient decent for maximum likelihood estimation of exponential-polynomial distribution, whose density is the exponential function of a polynomial in the random variable. We first consider the case that the support of the distribution is the set of positive reals. We show that the maximum likelihood estimate (MLE) can be easily computed by the holonomic gradient descent, even t…
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We study holonomic gradient decent for maximum likelihood estimation of exponential-polynomial distribution, whose density is the exponential function of a polynomial in the random variable. We first consider the case that the support of the distribution is the set of positive reals. We show that the maximum likelihood estimate (MLE) can be easily computed by the holonomic gradient descent, even though the normalizing constant of this family does not have a closed-form expression and discuss determination of the degree of the polynomial based on the score test statistic. Then we present extensions to the whole real line and to the bivariate distribution on the positive orthant.
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Submitted 15 September, 2014; v1 submitted 30 March, 2014;
originally announced March 2014.
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Storing magnetic information in IrMn/MgO/Ta tunnel junctions via field-cooling
Authors:
D. Petti,
E. Albisetti,
H. Reichlová,
J. Gazquez,
M. Varela,
M. Molina-Ruiz,
A. F. Lopeandía,
K. Olejník,
V. Novák,
I. Fina,
B. Dkhil,
J. Hayakawa,
X. Marti,
J. Wunderlich,
T. Jungwirth,
R. Bertacco
Abstract:
Tunneling junctions containing no ferromagnetic elements have been fabricated and we show that distinct resistance states can be set by field cooling the devices from above the Néel along different orientations. Variations of the resistance up to 10% are found upon field cooling in applied fields of 2T, in-plane or out of plane. Below TN, we found that the metastable states are insensitive to magn…
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Tunneling junctions containing no ferromagnetic elements have been fabricated and we show that distinct resistance states can be set by field cooling the devices from above the Néel along different orientations. Variations of the resistance up to 10% are found upon field cooling in applied fields of 2T, in-plane or out of plane. Below TN, we found that the metastable states are insensitive to magnetic fields thus constituting a memory element robust against external magnetic fields. Our work provides the demonstration of an electrically readable magnetic memory device, which contains no ferromagnetic elements and stores the information in an antiferromagnetic active layer.
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Submitted 15 February, 2013;
originally announced February 2013.
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Electrical measurement of antiferromagnetic moments in exchange-coupled IrMn/NiFe stacks
Authors:
X. Marti,
B. G. Park,
J. Wunderlich,
H. Reichlova,
Y. Kurosaki,
M. Yamada,
H. Yamamoto,
A. Nishide,
J. Hayakawa,
H. Takahashi,
T. Jungwirth
Abstract:
We employ the recently discovered antiferromagnetic tunneling anisotropic magnetoresistance to study the behavior of antiferromagnetically ordered moments in IrMn exchange coupled to NiFe. Experiments performed by common laboratory tools for magnetization and electrical transport measurements allow us to directly link the broadening of the NiFe hysteresis loop and its shift (exchange bias) to the…
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We employ the recently discovered antiferromagnetic tunneling anisotropic magnetoresistance to study the behavior of antiferromagnetically ordered moments in IrMn exchange coupled to NiFe. Experiments performed by common laboratory tools for magnetization and electrical transport measurements allow us to directly link the broadening of the NiFe hysteresis loop and its shift (exchange bias) to the rotation and pinning of antiferromagnetic moments in IrMn. At higher temperatures, the broadened loops show zero shift which correlates with the observation of fully rotating antiferromagnetic moments inside the IrMn film. The onset of exchange bias at lower temperatures is linked to a partial rotation between distinct metastable states and pinning of the IrMn antiferromagnetic moments in these states. The observation complements common pictures of exchange bias and reveals the presence of an electrically measurable memory effect in an antiferromagnet.
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Submitted 10 August, 2011;
originally announced August 2011.
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Tunneling anisotropic magnetoresistance of NiFe/IrMn/MgO/Pt stack: An antiferromagnet based spin-valve
Authors:
B. G. Park,
J. Wunderlich,
X. Marti,
V. Holy,
Y. Kurosaki,
M. Yamada,
H. Yamamoto,
A. Nishide,
J. Hayakawa,
H. Takahashi,
A. B. Shick,
T. Jungwirth
Abstract:
Spin-valve is a microelectronic device in which high and low resistance states are realized by utilizing both charge and spin of carriers. Spin-valve structures used in modern hard drive read-heads and magnetic random access memories comprise two ferromagnetic (FM) electrodes whose relative magnetization orientations can be switched between parallel and antiparallel configurations, yielding the de…
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Spin-valve is a microelectronic device in which high and low resistance states are realized by utilizing both charge and spin of carriers. Spin-valve structures used in modern hard drive read-heads and magnetic random access memories comprise two ferromagnetic (FM) electrodes whose relative magnetization orientations can be switched between parallel and antiparallel configurations, yielding the desired giant or tunneling magnetoresistance effect. In this paper we demonstrate >100$% spin-valve-like signal in a NiFe/IrMn/MgO/Pt stack with an antiferromagnet (AFM) on one side and a non-magnetic metal on the other side of the tunnel barrier. FM moments in NiFe are reversed by external fields <50mT and the exchange-spring effect of NiFe on IrMn induces rotation of AFM moments in IrMn which is detected by the measured tunneling anisotropic magnetoresistance (TAMR). Our work demonstrates a spintronic element whose transport characteristics are governed by an AFM. It demonstrates that sensitivity to low magnetic fields can be combined with large, spin-orbit coupling induced magneto-transport anisotropy using a single magnetic electrode. The AFM-TAMR provides means to study magnetic characteristics of AFM films by an electronic transport measurement.
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Submitted 14 November, 2010;
originally announced November 2010.
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MgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers
Authors:
K. Mizunuma,
S. Ikeda,
J. H. Park,
H. Yamamoto,
H. Gan,
K. Miura,
H. Hasegawa,
J. Hayakawa,
F. Matsukura,
H. Ohno
Abstract:
The authors studied an effect of ferromagnetic (Co20Fe60B20 or Fe) layer insertion on tunnel magnetoresistance (TMR) properties of MgO-barrier magnetic tunnel junctions (MTJs) with CoFe/Pd multilayer electrodes. TMR ratio in MTJs with CoFeB/MgO/Fe stack reached 67% at an-nealing temperature (Ta) of 200 degree C and then decreased rapidly at Ta over 250 degree C. The degradation of the TMR ratio…
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The authors studied an effect of ferromagnetic (Co20Fe60B20 or Fe) layer insertion on tunnel magnetoresistance (TMR) properties of MgO-barrier magnetic tunnel junctions (MTJs) with CoFe/Pd multilayer electrodes. TMR ratio in MTJs with CoFeB/MgO/Fe stack reached 67% at an-nealing temperature (Ta) of 200 degree C and then decreased rapidly at Ta over 250 degree C. The degradation of the TMR ratio may be related to crystallization of CoFe(B) into fcc(111) or bcc(011) texture result-ing from diffusion of B into Pd layers. MTJs which were in-situ annealed at 350oC just after depo-siting bottom CoFe/Pd multilayer showed TMR ratio of 78% by post annealing at Ta =200 degree C.
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Submitted 21 October, 2009;
originally announced October 2009.
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Current-induced magnetization switching in MgO barrier magnetic tunnel junctions with CoFeB based synthetic ferrimagnetic free layers
Authors:
Jun Hayakawa,
Shoji Ikeda,
Katsuya Miura,
Michihiko Yamanouchi,
Young Min Lee,
Ryutaro Sasaki,
Masahiko Ichimura,
Kenchi Ito,
Takayuki Kawahara,
Riichiro Takemura,
Toshiyasu Meguro,
Fumihiro Matsukura,
Hiromasa Takahashi,
Hideyuki Matsuoka,
Hideo Ohno
Abstract:
We investigated the effect of using a synthetic ferrimagnetic (SyF) free layer in MgO-based magnetic tunnel junctions (MTJs) on current-induced magnetization switching (CIMS), particularly for application to spin-transfer torque random access memory (SPRAM). The employed SyF free layer had a Co40Fe40B20/ Ru/ Co40Fe40B20 and Co20Fe60B20/Ru/Co20Fe60B20 structures, and the MTJs(100x(150-300) nm^2)…
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We investigated the effect of using a synthetic ferrimagnetic (SyF) free layer in MgO-based magnetic tunnel junctions (MTJs) on current-induced magnetization switching (CIMS), particularly for application to spin-transfer torque random access memory (SPRAM). The employed SyF free layer had a Co40Fe40B20/ Ru/ Co40Fe40B20 and Co20Fe60B20/Ru/Co20Fe60B20 structures, and the MTJs(100x(150-300) nm^2) were annealed at 300oC. The use of SyF free layer resulted in low intrinsic critical current density (Jc0) without degrading the thermal-stability factor (E/kBT, where E, kB, and T are the energy potential, the Boltzmann constant, and temperature,respectively). When the two CoFeB layers of a strongly antiferromagnetically coupled SyF free layer had the same thickness, Jc0 was reduced to 2-4x10^6 A/cm^2. This low Jc0 may be due to the decreased effective volume under the large spin accumulation at the CoFeB/Ru. The E/kBT was over 60, resulting in a retention time of over ten years and suppression of the write current dispersion for SPRAM. The use of the SyF free layer also resulted in a bistable (parallel/antiparallel) magnetization configuration at zero field, enabling the realization of CIMS without the need to apply external fields to compensate for the offset field.
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Submitted 8 January, 2008;
originally announced January 2008.
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Effect of high annealing temperature on giant tunnel magnetoresistance ratio of CoFeB/MgO/CoFeB magnetic tunnel junctions
Authors:
Jun Hayakawa,
Shoji Ikeda,
Young Min Lee,
Fumihiro Matsukura,
Hideo Ohno
Abstract:
We report tunnel magnetoresistance (TMR) ratios as high as 472% at room temperature and 804% at 5 K in pseudo-spin valve (SV) CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) annealed at 450oC, which is approaching the theoretically predicted value. By contrast, the TMR ratios for exchange-biased (EB) SV MTJs with a MnIr antiferromagnetic layer are found to drop when they are annealed at 450oC.…
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We report tunnel magnetoresistance (TMR) ratios as high as 472% at room temperature and 804% at 5 K in pseudo-spin valve (SV) CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) annealed at 450oC, which is approaching the theoretically predicted value. By contrast, the TMR ratios for exchange-biased (EB) SV MTJs with a MnIr antiferromagnetic layer are found to drop when they are annealed at 450oC. Energy dispersive X-ray analysis shows that annealing at 450oC induces interdiffusion of Mn and Ru atoms into the MgO barrier and ferromagnetic layers in EB-SV MTJs. Mechanisms behind the different annealing behavior are discussed.
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Submitted 18 October, 2006;
originally announced October 2006.
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Current-induced magnetization switching in MgO barrier based magnetic tunnel junctions with CoFeB/Ru/CoFeB synthetic ferrimagnetic free layer
Authors:
Jun Hayakawa,
Shoji Ikeda,
Young Min Lee,
Ryutaro Sasaki,
Toshiyasu Meguro,
Fumihiro Matsukura,
Hiromasa Takahashi,
Hideo Ohno
Abstract:
We report the intrinsic critical current density (Jc0) in current-induced magnetization switching and the thermal stability factor (E/kBT, where E, kB, and T are the energy potential, the Boltzmann constant, and temperature, respectively) in MgO based magnetic tunnel junctions with a Co40Fe40B20(2nm)/Ru(0.7-2.4nm)/Co40Fe40B20(2nm) synthetic ferrimagnetic (SyF) free layer. We show that Jc0 and E/…
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We report the intrinsic critical current density (Jc0) in current-induced magnetization switching and the thermal stability factor (E/kBT, where E, kB, and T are the energy potential, the Boltzmann constant, and temperature, respectively) in MgO based magnetic tunnel junctions with a Co40Fe40B20(2nm)/Ru(0.7-2.4nm)/Co40Fe40B20(2nm) synthetic ferrimagnetic (SyF) free layer. We show that Jc0 and E/kBT can be determined by analyzing the average critical current density as a function of coercivity using the Slonczewski's model taking into account thermal fluctuation. We find that high antiferromagnetic coupling between the two CoFeB layers in a SyF free layer results in reduced Jc0 without reducing high E/kBT.
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Submitted 28 September, 2006; v1 submitted 13 September, 2006;
originally announced September 2006.
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Dependence of tunnel magnetoresistance on ferromagnetic electrode materials in MgO-barrier magnetic tunnel junctions
Authors:
Shoji Ikeda,
Jun Hayakawa,
Young Min Lee,
Fumihiro Matsukura,
Hideo Ohno
Abstract:
We investigated the relationship between the tunnel magnetoresistance (TMR) ratio and the electrode structure in MgO-barrier magnetic tunnel junctions (MTJs). The TMR ratio in a MTJ with Co40Fe40B20 reference and free layers reached 355% at the post-deposition annealing temperature of Ta=400 degree C. When Co50Fe50 or Co90Fe10 is used for the reference layer material, no high TMR ratio was obser…
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We investigated the relationship between the tunnel magnetoresistance (TMR) ratio and the electrode structure in MgO-barrier magnetic tunnel junctions (MTJs). The TMR ratio in a MTJ with Co40Fe40B20 reference and free layers reached 355% at the post-deposition annealing temperature of Ta=400 degree C. When Co50Fe50 or Co90Fe10 is used for the reference layer material, no high TMR ratio was observed. The key to have high TMR ratio is to have highly oriented (001) MgO barrier/CoFeB crystalline electrodes. The highest TMR ratio obtained so far is 450% at Ta = 450 degree C in a pseudo spin-valve MTJ.
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Submitted 25 August, 2006;
originally announced August 2006.
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Giant tunnel magnetoresistance and high annealing stability in CoFeB/MgO/CoFeB magnetic tunnel junctions with synthetic pinned layer
Authors:
Young Min Lee,
Jun Hayakawa,
Shoji Ikeda,
Fumihiro Matsukura,
Hideo Ohno
Abstract:
We investigated the relationship between tunnel magnetoresistance (TMR) ratio and the crystallization of CoFeB layers through annealing in magnetic tunnel junctions (MTJs) with MgO barriers that had CoFe/Ru/CoFeB synthetic ferrimagnet pinned layers with varying Ru spacer thickness (tRu). The TMR ratio increased with increasing annealing temperature (Ta) and tRu, reaching 361% at Ta = 425C, where…
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We investigated the relationship between tunnel magnetoresistance (TMR) ratio and the crystallization of CoFeB layers through annealing in magnetic tunnel junctions (MTJs) with MgO barriers that had CoFe/Ru/CoFeB synthetic ferrimagnet pinned layers with varying Ru spacer thickness (tRu). The TMR ratio increased with increasing annealing temperature (Ta) and tRu, reaching 361% at Ta = 425C, whereas the TMR ratio of the MTJs with pinned layers without Ru spacers decreased at Ta over 325C. Ruthenium spacers play an important role in forming an (001)-oriented bcc CoFeB pinned layer, resulting in a high TMR ratio through annealing at high temperatures.
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Submitted 19 June, 2006;
originally announced June 2006.
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Current-driven magnetization switching in CoFeB/MgO/CoFeB magnetic tunnel junctions
Authors:
Jun Hayakawa,
Shoji Ikeda,
Young Min Lee,
Ryutaro Sasaki,
Toshiyasu Meguro,
Fumihiro Matsukura,
Hiromasa Takahashi,
Hideo Ohno
Abstract:
Current-driven magnetization switching in low-resistance Co40Fe40B20/MgO/Co40Fe40B20 magnetic tunnel junctions (MTJs) is reported. The critical-current densities Jc required for current-driven switching in samples annealed at 270C and 300C are found to be as low as 7.8 x 10^5 A/cm^2 and 8.8 x 10^5 A/cm^2 with accompanying tunnel magnetoresistance (TMR) ratios of 49% and 73 %, respectively. Furth…
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Current-driven magnetization switching in low-resistance Co40Fe40B20/MgO/Co40Fe40B20 magnetic tunnel junctions (MTJs) is reported. The critical-current densities Jc required for current-driven switching in samples annealed at 270C and 300C are found to be as low as 7.8 x 10^5 A/cm^2 and 8.8 x 10^5 A/cm^2 with accompanying tunnel magnetoresistance (TMR) ratios of 49% and 73 %, respectively. Further annealing of the samples at 350C increases TMR ratio to 160 %, while accompanying Jc increases to 2.5 x 10^6 A/cm^2. We attribute the low Jc to the high spin-polarization of tunnel current and small MsV product of the CoFeB single free layer, where Ms is the saturation magnetization and V the volume of the free layer.
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Submitted 20 October, 2005;
originally announced October 2005.
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Dependence of tunnel magnetoresistance in MgO based magnetic tunnel junctions on Ar pressure during MgO sputtering
Authors:
Shoji Ikeda,
Jun Hayakawa,
Young Min Lee,
Ryutaro Sasaki,
Toshiyasu Meguro,
Fumihiro Matsukura,
Hideo Ohno
Abstract:
We investigated dependence of tunnel magnetoresistance effect in CoFeB/MgO/CoFeB magnetic tunnel junctions on Ar pressure during MgO-barrier sputtering. Sputter deposition of MgO-barrier at high Ar pressure of 10 mTorr resulted in smooth surface and highly (001) oriented MgO. Using this MgO as a tunnel barrier, tunnel magnetoresistance (TMR) ratio as high as 355% at room temperature (578% at 5K)…
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We investigated dependence of tunnel magnetoresistance effect in CoFeB/MgO/CoFeB magnetic tunnel junctions on Ar pressure during MgO-barrier sputtering. Sputter deposition of MgO-barrier at high Ar pressure of 10 mTorr resulted in smooth surface and highly (001) oriented MgO. Using this MgO as a tunnel barrier, tunnel magnetoresistance (TMR) ratio as high as 355% at room temperature (578% at 5K) was realized after annealing at 325 C or higher, which appears to be related to a highly (001) oriented CoFeB texture promoted by the smooth and highly oriented MgO. Electron-beam lithography defined deep-submicron MTJs having a low-resistivity Au underlayer with the high-pressure deposited MgO showed high TMR ratio at low resistance-area product (RA) below 10 ohm-um^2 as 27% at RA = 0.8 ohm-um^2, 77% at RA = 1.1 ohm-um^2, 130% at RA = 1.7 ohm-um^2, and 165% at RA = 2.9 ohm-um^2.
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Submitted 20 October, 2005;
originally announced October 2005.
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Dependence of Giant Tunnel Magnetoresistance of Sputtered CoFeB/MgO/CoFeB Magnetic Tunnel Junctions on MgO Barrier Thickness and Annealing Temperatur
Authors:
Jun Hayakawa,
Shoji Ikeda,
Fumihiro Matsukura,
Hiromasa Takahashi,
Hideo Ohno
Abstract:
We investigated the dependence of giant tunnel magnetoresistance (TMR) on the thickness of an MgO barrier and on the annealing temperature of sputtered CoFeB/MgO/CoFeB magnetic tunnel junctions deposited on SiO2/Si wafers. The resistance-area product exponentially increases with MgO thickness, indicating that the quality of MgO barriers is high in the investigated thickness range of 1.15-2.4 nm.…
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We investigated the dependence of giant tunnel magnetoresistance (TMR) on the thickness of an MgO barrier and on the annealing temperature of sputtered CoFeB/MgO/CoFeB magnetic tunnel junctions deposited on SiO2/Si wafers. The resistance-area product exponentially increases with MgO thickness, indicating that the quality of MgO barriers is high in the investigated thickness range of 1.15-2.4 nm. High-resolution transmission electron microscope images show that annealing at 375 C results in the formation of crystalline CoFeB/MgO/CoFeB structures, even though CoFeB electrodes are amorphous in the as-sputtered state. The TMR ratio increases with annealing temperature and is as high as 260% at room temperature and 403% at 5 K.
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Submitted 2 April, 2005;
originally announced April 2005.
