Ion-Exchange Doping of Semiconducting Single-Walled Carbon Nanotubes
Authors:
Angus Hawkey,
Aditya Dash,
Xabier Rodríguez-Martínez,
Zhiyong Zhao,
Anna Champ,
Sebastian Lindenthal,
Michael Zharnikov,
Martijn Kemerink,
Jana Zaumseil
Abstract:
Semiconducting single-walled carbon nanotubes (SWCNTs) are a promising thermoelectric material with high power factors after chemical p- or n-doping. Understanding the impact of dopant counterions on charge transport and thermoelectric properties of nanotube networks is essential to further optimize doping methods and to develop better dopants. Here, we utilize ion-exchange doping to systematicall…
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Semiconducting single-walled carbon nanotubes (SWCNTs) are a promising thermoelectric material with high power factors after chemical p- or n-doping. Understanding the impact of dopant counterions on charge transport and thermoelectric properties of nanotube networks is essential to further optimize doping methods and to develop better dopants. Here, we utilize ion-exchange doping to systematically vary the size of counterions in thin films of small and large diameter, polymer-sorted semiconducting SWCNTs with AuCl3 as the initial p-dopant and investigate the impact of ion size on conductivity, Seebeck coefficients and power factors. Larger anions are found to correlate with higher electrical conductivities and improved doping stability, while no significant effect on the power factors is found. Importantly, the effect of counterion size on the thermoelectric properties of dense SWCNT networks is not obscured by morphological changes upon doping. The observed trends of carrier mobilities and Seebeck coefficients can be explained by a random resistor model for the nanotube network that accounts for overlapping Coulomb potentials leading to the formation of an impurity band whose depth depends on the carrier density and counterion size. These insights can be applied more broadly to understand the thermoelectric properties of doped percolating disordered systems, including semiconducting polymers.
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Submitted 20 March, 2025;
originally announced March 2025.
Bandgap-Dependent Doping of Semiconducting Carbon Nanotube Networks by Proton-Coupled Electron Transfer for Stable Thermoelectrics
Authors:
Angus Hawkey,
Xabier Rodríguez-Martínez,
Sebastian Lindenthal,
Moritz C. F. Jansen,
Reverant Crispin,
Jana Zaumseil
Abstract:
Networks of semiconducting single-walled carbon nanotubes (SWNTs) are a promising material for thermoelectric energy harvesting due to their mechanical flexibility, solution processability, high Seebeck coefficients and high electrical conductivities after chemical p- or n-doping. Here, we demonstrate that proton-coupled electron transfer (PCET) with benzoquinone (BQ) as the oxidant and lithium bi…
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Networks of semiconducting single-walled carbon nanotubes (SWNTs) are a promising material for thermoelectric energy harvesting due to their mechanical flexibility, solution processability, high Seebeck coefficients and high electrical conductivities after chemical p- or n-doping. Here, we demonstrate that proton-coupled electron transfer (PCET) with benzoquinone (BQ) as the oxidant and lithium bis(trifluoromethylsulfonyl)imide (Li[TFSI]) for electrolyte counterions is a promising method for p-doping of polymer-sorted semiconducting SWNT networks. The achieved doping levels, as determined from absorption bleaching, depend directly on both the pH of the aqueous doping solutions and the bandgap (i.e., diameter) of the nanotubes within the network. Fast screening of different nanotube networks under various doping conditions was enabled by a high-throughput setup for thermoelectric measurements of five samples in parallel. For small-bandgap SWNTs, PCET-doping is sufficient to reach the maximum thermoelectric power factors, which are equal to those obtained by conventional methods. In contrast to other doping methods, the electrical conductivity of PCET-doped SWNTs remains stable over at least 5 days in air. These results confirm PCET to be a suitable approach for more environmentally friendly and stable doping of semiconducting SWNTs as promising thermoelectric materials.
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Submitted 20 March, 2025;
originally announced March 2025.
