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On the origin of the E1 electron trap level in GaN and dilute AlxGa1-xN films
Authors:
Piotr Kruszewski,
Jose Coutinho,
Vladimir P. Markevich,
Pawel Prystawko,
Lijie Sun,
Jerzy Plesiewicz,
Chris A. Dawe,
Matthew P. Halsall,
Anthony R. Peaker
Abstract:
The results of high-resolution Laplace deep-level transient spectroscopy (L-DLTS) measurements applied to the E1 and FeGa electron traps in dilute AlxGa1-xN films (x = 0.063), grown by metal-organic vapor phase epitaxy (MOVPE) on Ammono-GaN substrates, are presented. It is shown that the electron emission signals associated with the E1 donor and the FeGa acceptor levels split into individual compo…
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The results of high-resolution Laplace deep-level transient spectroscopy (L-DLTS) measurements applied to the E1 and FeGa electron traps in dilute AlxGa1-xN films (x = 0.063), grown by metal-organic vapor phase epitaxy (MOVPE) on Ammono-GaN substrates, are presented. It is shown that the electron emission signals associated with the E1 donor and the FeGa acceptor levels split into individual components due to the aluminium fluctuations in the nearest neighbour shells around the E1 and FeGa defects. The splitting patterns observed in the L-DLTS spectra are nearly identical for both signals. Furthermore, the ratios of peak magnitudes determined from the L-DLTS analysis for both the E1 and E3 traps are consistent with calculated probabilities of finding a given number of aluminium atoms in the second nearest neighbour shell around a Ga lattice site in AlxGa1-xN with x = 0.063. These findings provide strong evidence that both the E1 and the FeGa trap states in dilute AlxGa1-xN are related to defects located in the Ga sublattice. To elucidate the origin of the E1 trap in AlxGa1-xN, we have performed a comprehensive scan of possible impurities and defects in GaN and AlxGa1-xN using hybrid density functional calculations of transition levels and their associated shifts upon substitution of Ga neighbour atoms by Al. From analysis of the results, we find that the E1 electron trap in GaN and AlxGa1-xN is most likely related to a donor transition from a carbon or molybdenum impurity atom at the gallium site, respectively.
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Submitted 12 June, 2025;
originally announced June 2025.
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Towards Substrate Engineering of Graphene-Silicon Schottky Diode Photodetectors
Authors:
H. Selvi,
N. Unsuree,
E. Whittaker,
M. P. Halsall,
E. W. Hill,
P. Parkinson,
T. J. Echtermeyer
Abstract:
Graphene-Silicon Schottky diode photodetectors possess beneficial properties such as high responsivities and detectivities, broad spectral wavelength operation and high operating speeds. Various routes and architectures have been employed in the past to fabricate devices. Devices are commonly based on the removal of the silicon-oxide layer on the surface of silicon by wet-etching before deposition…
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Graphene-Silicon Schottky diode photodetectors possess beneficial properties such as high responsivities and detectivities, broad spectral wavelength operation and high operating speeds. Various routes and architectures have been employed in the past to fabricate devices. Devices are commonly based on the removal of the silicon-oxide layer on the surface of silicon by wet-etching before deposition of graphene on top of silicon to form the graphene-silicon Schottky junction. In this work, we systematically investigate the influence of the interfacial oxide layer, the fabrication technique employed and the silicon substrate on the light detection capabilities of graphene-silicon Schottky diode photodetectors. The properties of devices are investigated over a broad wavelength range from near-UV to short-/mid-infrared radiation, radiation intensities covering over five orders of magnitude as well as the suitability of devices for high speed operation. Results show that the interfacial layer, depending on the required application, is in fact beneficial to enhance the photodetection properties of such devices. Further, we demonstrate the influence of the silicon substrate on the spectral response and operating speed. Fabricated devices operate over a broad spectral wavelength range from the near-UV to the short-/mid-infrared (thermal) wavelength regime, exhibit high photovoltage responses approaching 10$^6$ V/W and short rise- and fall-times of tens of nanoseconds.
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Submitted 27 June, 2017;
originally announced June 2017.
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Pressure coefficients of Raman modes of carbon nanotubes resolved by chirality: Environmental effect on graphene sheet
Authors:
A. J. Ghandour,
I. F. Crowe,
J. E. Proctor,
Y. W. Sun,
M. P. Halsall,
I. Hernandez,
A. Sapelkin,
D. J. Dunstan
Abstract:
Studies of the mechanical properties of single-walled carbon nanotubes are hindered by the availability only of ensembles of tubes with a range of diameters. Tunable Raman excitation spectroscopy picks out identifiable tubes. Under high pressure, the radial breathing mode shows a strong environmental effect shown here to be largely independent of the nature of the environment . For the G-mode, the…
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Studies of the mechanical properties of single-walled carbon nanotubes are hindered by the availability only of ensembles of tubes with a range of diameters. Tunable Raman excitation spectroscopy picks out identifiable tubes. Under high pressure, the radial breathing mode shows a strong environmental effect shown here to be largely independent of the nature of the environment . For the G-mode, the pressure coefficient varies with diameter consistent with the thick-wall tube model. However, results show an unexpectedly strong environmental effect on the pressure coefficients. Reappraisal of data for graphene and graphite gives the G-mode Grueuneisen parameter gamma = 1.34 and the shear deformation parameter beta = 1.34.
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Submitted 3 August, 2012;
originally announced August 2012.
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Raman excitation spectroscopy of carbon nanotubes: effects of pressure medium and pressure
Authors:
A. J. Ghandour,
A. Sapelkin,
I. Hernandez,
D. J. Dunstan,
I. F. Crowe,
M. P. Halsall
Abstract:
Raman excitation and emission spectra for the radial breathing mode (RBM) are reported, together with a preliminary analysis. From the position of the peaks on the two-dimensional plot of excitation resonance energy against Raman shift, the chiral indices (m, n) for each peak are identified. Peaks shift from their positions in air when different pressure media are added - water, hexane, sulphuric…
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Raman excitation and emission spectra for the radial breathing mode (RBM) are reported, together with a preliminary analysis. From the position of the peaks on the two-dimensional plot of excitation resonance energy against Raman shift, the chiral indices (m, n) for each peak are identified. Peaks shift from their positions in air when different pressure media are added - water, hexane, sulphuric acid - and when the nanotubes are unbundled in water with surfactant and sonication. The shift is about 2 - 3 cm-1 in RBM frequency, but unexpectedly large in resonance energy, being spread over up to 100meV for a given peak. This contrasts with the effect of pressure. The shift of the peaks of semiconducting nanotubes in water under pressure is orthogonal to the shift from air to water. This permits the separation of the effects of the pressure medium and the pressure, and will enable the true pressure coefficients of the RBM and the other Raman peaks for each (m, n) to be established unambiguously.
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Submitted 10 May, 2012;
originally announced May 2012.
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Graphene under hydrostatic pressure
Authors:
John E. Proctor,
Eugene Gregoryanz,
Konstantin S. Novoselov,
Mustafa Lotya,
Jonathan N. Coleman,
Matthew P. Halsall
Abstract:
In-situ high pressure Raman spectroscopy is used to study monolayer, bilayer and few-layer graphene samples supported on silicon in a diamond anvil cell to 3.5 GPa. The results show that monolayer graphene adheres to the silicon substrate under compressive stress. A clear trend in this behaviour as a function of graphene sample thickness is observed. We also study unsupported graphene samples in…
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In-situ high pressure Raman spectroscopy is used to study monolayer, bilayer and few-layer graphene samples supported on silicon in a diamond anvil cell to 3.5 GPa. The results show that monolayer graphene adheres to the silicon substrate under compressive stress. A clear trend in this behaviour as a function of graphene sample thickness is observed. We also study unsupported graphene samples in a diamond anvil cell to 8 GPa, and show that the properties of graphene under compression are intrinsically similar to graphite. Our results demonstrate the differing effects of uniaxial and biaxial strain on the electronic bandstructure.
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Submitted 3 August, 2009; v1 submitted 19 May, 2009;
originally announced May 2009.
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Control of graphene's properties by reversible hydrogenation
Authors:
D. C. Elias,
R. R. Nair,
T. M. G. Mohiuddin,
S. V. Morozov,
P. Blake,
M. P. Halsall,
A. C. Ferrari,
D. W. Boukhvalov,
M. I. Katsnelson,
A. K. Geim,
K. S. Novoselov
Abstract:
Graphene - a monolayer of carbon atoms densely packed into a hexagonal lattice - has one of the strongest possible atomic bonds and can be viewed as a robust atomic-scale scaffold, to which other chemical species can be attached without destroying it. This notion of graphene as a giant flat molecule that can be altered chemically is supported by the observation of so-called graphene oxide, that…
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Graphene - a monolayer of carbon atoms densely packed into a hexagonal lattice - has one of the strongest possible atomic bonds and can be viewed as a robust atomic-scale scaffold, to which other chemical species can be attached without destroying it. This notion of graphene as a giant flat molecule that can be altered chemically is supported by the observation of so-called graphene oxide, that is graphene densely covered with hydroxyl and other groups. Unfortunately, graphene oxide is strongly disordered, poorly conductive and difficult to reduce to the original state. Nevertheless, one can imagine atoms or molecules being attached to the atomic scaffold in a strictly periodic manner, which should result in a different electronic structure and, essentially, a different crystalline material. A hypothetical example for this is graphane, a wide-gap semiconductor, in which hydrogen is bonded to each carbon site of graphene. Here we show that by exposing graphene to atomic hydrogen, it is possible to transform this highly-conductive semimetal into an insulator. Transmission electron microscopy reveals that the material retains the hexagonal lattice but its period becomes markedly shorter than that of graphene, providing direct evidence for a new graphene-based derivative. The reaction with hydrogen is found to be reversible so that the original metallic state and lattice spacing are restored by annealing and even the quantum Hall effect recovers. Our work proves the concept of chemical modification of graphene, which promises a whole range of new two-dimensional crystals with designed electronic and other properties.
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Submitted 26 October, 2008;
originally announced October 2008.
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Terahertz sensing by beryllium and silicon delta-doped GaAs/AlAs quantum wells
Authors:
D. Seliuta,
J. Kavaliauskas,
B. Cechavicius,
S. Balakauskas,
G. Valusis,
B. Sherliker,
M. P. Halsall,
P. Harrison,
M. Lachab,
S. P. Khanna,
E. H. Linfield
Abstract:
Selective sensing of terahertz (THz) radiation by beryllium and silicon delta-doped GaAs/AlAs multiple quantum wells (MQWs) is demonstrated. A sensitivity up to 0.3 V/W within 0.5{4.2 THz in silicon- and up to 1 V/W within 4.2-7.3 THz range in beryllium-doped MQWs at liquid helium temperatures is shown. The built-in electric fields as estimated from the observed Franz-Keldysh oscillations in pho…
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Selective sensing of terahertz (THz) radiation by beryllium and silicon delta-doped GaAs/AlAs multiple quantum wells (MQWs) is demonstrated. A sensitivity up to 0.3 V/W within 0.5{4.2 THz in silicon- and up to 1 V/W within 4.2-7.3 THz range in beryllium-doped MQWs at liquid helium temperatures is shown. The built-in electric fields as estimated from the observed Franz-Keldysh oscillations in photoreflectance spectra were found to be located close to the cap and buffer layers of MQWs and vary from 18 kV/cm up to 49 kV/cm depending on the structure design.
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Submitted 3 November, 2007;
originally announced November 2007.
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Terahertz detection with delta-doped GaAs/AlAs multiple quantum wells
Authors:
D. Seliuta,
B. Cechavicius,
J. Kavaliauskas,
G. Krivaite,
I. Grigelionis,
S. Balakauskas,
G. Valusis,
B. Sherliker,
M. P. Halsall,
M. Lachab,
S. P. Khanna,
P. Harrison,
E. H. Linfield
Abstract:
The authors demonstrate selective detection of terahertz radiation employing beryllium delta-doped GaAs/AlAs multiple quantum wells. The sensitivity up to 1 V/W within 4.2-7.3 THz range at liquid helium temperatures is reached. The Franz-Keldysh oscillations observed in photo- and electro-reflectance spectra allowed one to estimate built-in electric fields in the structures studied. It was found…
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The authors demonstrate selective detection of terahertz radiation employing beryllium delta-doped GaAs/AlAs multiple quantum wells. The sensitivity up to 1 V/W within 4.2-7.3 THz range at liquid helium temperatures is reached. The Franz-Keldysh oscillations observed in photo- and electro-reflectance spectra allowed one to estimate built-in electric fields in the structures studied. It was found that the electric field strength in the cap layer region could vary from 10 kV/cm up to 26 kV/cm, depending on the structure design and temperature.
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Submitted 3 November, 2007;
originally announced November 2007.
