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Reinforcement Learning For Quadrupedal Locomotion: Current Advancements And Future Perspectives
Authors:
Maurya Gurram,
Prakash Kumar Uttam,
Shantipal S. Ohol
Abstract:
In recent years, reinforcement learning (RL) based quadrupedal locomotion control has emerged as an extensively researched field, driven by the potential advantages of autonomous learning and adaptation compared to traditional control methods. This paper provides a comprehensive study of the latest research in applying RL techniques to develop locomotion controllers for quadrupedal robots. We pres…
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In recent years, reinforcement learning (RL) based quadrupedal locomotion control has emerged as an extensively researched field, driven by the potential advantages of autonomous learning and adaptation compared to traditional control methods. This paper provides a comprehensive study of the latest research in applying RL techniques to develop locomotion controllers for quadrupedal robots. We present a detailed overview of the core concepts, methodologies, and key advancements in RL-based locomotion controllers, including learning algorithms, training curricula, reward formulations, and simulation-to-real transfer techniques. The study covers both gait-bound and gait-free approaches, highlighting their respective strengths and limitations. Additionally, we discuss the integration of these controllers with robotic hardware and the role of sensor feedback in enabling adaptive behavior. The paper also outlines future research directions, such as incorporating exteroceptive sensing, combining model-based and model-free techniques, and developing online learning capabilities. Our study aims to provide researchers and practitioners with a comprehensive understanding of the state-of-the-art in RL-based locomotion controllers, enabling them to build upon existing work and explore novel solutions for enhancing the mobility and adaptability of quadrupedal robots in real-world environments.
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Submitted 14 October, 2024;
originally announced October 2024.
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Nonlinear analog spintronics with van der Waals heterostructures
Authors:
S. Omar,
M. Gurram,
K. Watanabe,
T. Taniguchi,
M. H. D. Guimarães,
B. J. van Wees
Abstract:
The current generation of spintronic devices, which use electron-spin relies on linear operations for spin-injection, transport and detection processes. The existence of nonlinearity in a spintronic device is indispensable for spin-based complex signal processing operations. Here we for the first time demonstrate the presence of electron-spin dependent nonlinearity in a spintronic device, and meas…
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The current generation of spintronic devices, which use electron-spin relies on linear operations for spin-injection, transport and detection processes. The existence of nonlinearity in a spintronic device is indispensable for spin-based complex signal processing operations. Here we for the first time demonstrate the presence of electron-spin dependent nonlinearity in a spintronic device, and measure up to 4th harmonic spin-signals via nonlocal spin-valve and Hanle spin-precession measurements. We demonstrate its application for analog signal processing over pure spin-signals such as amplitude modulation and heterodyne detection operations which require nonlinearity as an essential element. Furthermore, we show that the presence of nonlinearity in the spin-signal has an amplifying effect on the energy-dependent conductivity induced nonlinear spin-to-charge conversion effect. The interaction of the two spin-dependent nonlinear effects in the spin transport channel leads to a highly efficient detection of the spin-signal without using ferromagnets. These effects are measured both at 4K and room temperature, and are suitable for their applications as nonlinear circuit elements in the fields of advanced-spintronics and spin-based neuromorphic computing.
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Submitted 21 April, 2020;
originally announced April 2020.
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Efficient spin injection into graphene through trilayer hBN tunnel barriers
Authors:
Johannes Christian Leutenantsmeyer,
Josep Ingla-Aynés,
Mallikajurna Gurram,
Bart J. van Wees
Abstract:
We characterize the spin injection into bilayer graphene fully encapsulated in hBN using trilayer (3L) hexagonal boron nitride (hBN) tunnel barriers. As a function of the DC bias, the differential spin injection polarization is found to rise up to -60% at -250 mV DC bias voltage. We measure a DC spin polarization of $\sim$ 50%, a 30% increase compared to 2L-hBN. The large polarization is confirmed…
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We characterize the spin injection into bilayer graphene fully encapsulated in hBN using trilayer (3L) hexagonal boron nitride (hBN) tunnel barriers. As a function of the DC bias, the differential spin injection polarization is found to rise up to -60% at -250 mV DC bias voltage. We measure a DC spin polarization of $\sim$ 50%, a 30% increase compared to 2L-hBN. The large polarization is confirmed by local, two terminal spin transport measurements up to room temperature. We observe comparable differential spin injection efficiencies from Co/2L-hBN and Co/3L-hBN into graphene and conclude that possible exchange interaction between cobalt and graphene is likely not the origin of the bias dependence. Furthermore, our results show that local gating, arising from the applied DC bias is not responsible for the DC bias dependence. Carrier density dependent measurements of the spin injection efficiency are discussed, where we find no significant modulation of the differential spin injection polarization. We also address the bias dependence of the injection of in-plane and out-of-plane spins and conclude that the spin injection polarization is isotropic and does not depend on the applied bias.
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Submitted 2 August, 2018;
originally announced August 2018.
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Bias dependent spin injection into graphene on YIG through bilayer hBN tunnel barriers
Authors:
J. C. Leutenantsmeyer,
T. Liu,
M. Gurram,
A. A. Kaverzin,
B. J. van Wees
Abstract:
We study the spin injection efficiency into single and bilayer graphene on the ferrimagnetic insulator Yttrium-Iron-Garnet (YIG) through an exfoliated tunnel barrier of bilayer hexagonal boron nitride (hBN). The contacts of two samples yield a resistance-area product between 5 and 30 k$Ωμ$m$^2$. Depending on an applied DC bias current, the magnitude of the non-local spin signal can be increased or…
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We study the spin injection efficiency into single and bilayer graphene on the ferrimagnetic insulator Yttrium-Iron-Garnet (YIG) through an exfoliated tunnel barrier of bilayer hexagonal boron nitride (hBN). The contacts of two samples yield a resistance-area product between 5 and 30 k$Ωμ$m$^2$. Depending on an applied DC bias current, the magnitude of the non-local spin signal can be increased or suppressed below the noise level. The spin injection efficiency reaches values from -60% to +25%. The results are confirmed with both spin valve and spin precession measurements. The proximity induced exchange field is found in sample A to be (85 $\pm$ 30) mT and in sample B close to the detection limit. Our results show that the exceptional spin injection properties of bilayer hBN tunnel barriers reported by Gurram et al. are not limited to fully encapsulated graphene systems but are also valid in graphene/YIG devices. This further emphasizes the versatility of bilayer hBN as an efficient and reliable tunnel barrier for graphene spintronics.
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Submitted 23 July, 2018;
originally announced July 2018.
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Electrical spin injection, transport, and detection in graphene-hexagonal boron nitride van der Waals heterostructures: progress and perspectives
Authors:
Mallikarjuna Gurram,
Siddhartha Omar,
Bart J. van Wees
Abstract:
The current research in graphene spintronics strives for achieving a long spin lifetime, and efficient spin injection and detection in graphene. In this article, we review how hexagonal boron nitride (hBN) has evolved as a crucial substrate, as an encapsulation layer, and as a tunnel barrier for manipulation and control of spin lifetimes and spin injection/detection polarizations in graphene spin…
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The current research in graphene spintronics strives for achieving a long spin lifetime, and efficient spin injection and detection in graphene. In this article, we review how hexagonal boron nitride (hBN) has evolved as a crucial substrate, as an encapsulation layer, and as a tunnel barrier for manipulation and control of spin lifetimes and spin injection/detection polarizations in graphene spin valve devices. First, we give an overview of the challenges due to conventional SiO$_2$ substrate for spin transport in graphene followed by the progress made in hBN based graphene heterostructures. Then we discuss in detail the shortcomings and developments in using conventional oxide tunnel barriers for spin injection into graphene followed by introducing the recent advancements in using the crystalline single/bi/tri-layer hBN tunnel barriers for an improved spin injection and detection which also can facilitate two-terminal spin valve and Hanle measurements, at room temperature, and are of technological importance. A special case of bias induced spin polarization of contacts with exfoliated and chemical vapour deposition (CVD) grown hBN tunnel barriers is also discussed. Further, we give our perspectives on utilizing graphene-hBN heterostructures for future developments in graphene spintronics.
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Submitted 21 December, 2017;
originally announced December 2017.
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Spin transport in two-layer-CVD-hBN/graphene/hBN heterostructures
Authors:
Mallikarjuna Gurram,
Siddhartha Omar,
Simon Zihlmann,
Péter Makk,
Qiucheng Li,
Yanfeng Zhang,
Christian Schönenberger,
Bart J. van Wees
Abstract:
We study room temperature spin transport in graphene devices encapsulated between a layer-by-layer-stacked two-layer-thick chemical vapour deposition (CVD) grown hexagonal boron nitride (hBN) tunnel barrier, and a few-layer-thick exfoliated-hBN substrate. We find mobilities and spin-relaxation times comparable to that of SiO$_2$ substrate based graphene devices, and obtain a similar order of magni…
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We study room temperature spin transport in graphene devices encapsulated between a layer-by-layer-stacked two-layer-thick chemical vapour deposition (CVD) grown hexagonal boron nitride (hBN) tunnel barrier, and a few-layer-thick exfoliated-hBN substrate. We find mobilities and spin-relaxation times comparable to that of SiO$_2$ substrate based graphene devices, and obtain a similar order of magnitude of spin relaxation rates for both the Elliott-Yafet and D'Yakonov-Perel' mechanisms. The behaviour of ferromagnet/two-layer-CVD-hBN/graphene/hBN contacts ranges from transparent to tunneling due to inhomogeneities in the CVD-hBN barriers. Surprisingly, we find both positive and negative spin polarizations for high-resistance two-layer-CVD-hBN barrier contacts with respect to the low-resistance contacts. Furthermore, we find that the differential spin injection polarization of the high-resistance contacts can be modulated by DC bias from -0.3 V to +0.3 V with no change in its sign, while its magnitude increases at higher negative bias. These features mark a distinctive spin injection nature of the two-layer-CVD-hBN compared to the bilayer-exfoliated-hBN tunnel barriers.
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Submitted 3 December, 2017;
originally announced December 2017.
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Bias induced up to 100% spin-injection and detection polarizations in ferromagnet/bilayer-hBN/graphene/hBN heterostructures
Authors:
Mallikarjuna Gurram,
Siddhartha Omar,
Bart J. van Wees
Abstract:
We study spin transport in a fully hBN encapsulated monolayer-graphene van der Waals (vdW) heterostructure, at room temperature. A top-layer of bilayer-hBN is used as a tunnel barrier for spin-injection and detection in graphene with ferromagnetic cobalt electrodes. We report surprisingly large and bias induced (differential) spin-injection (detection) polarizations up to 50% (135%) at a positive…
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We study spin transport in a fully hBN encapsulated monolayer-graphene van der Waals (vdW) heterostructure, at room temperature. A top-layer of bilayer-hBN is used as a tunnel barrier for spin-injection and detection in graphene with ferromagnetic cobalt electrodes. We report surprisingly large and bias induced (differential) spin-injection (detection) polarizations up to 50% (135%) at a positive voltage bias of +0.6 V, as well as sign inverted polarizations up to -70% (-60%) at a reverse bias of -0.4 V. This demonstrates the potential of bilayer-hBN tunnel barriers for practical graphene spintronics applications. With such enhanced spin-injection and detection polarizations, we report a record two-terminal (inverted) spin-valve signals up to 800 $Ω$ with a magnetoresistance ratio of 2.7%, and we achieve spin accumulations up to 4.1 meV. We propose how these numbers can be increased further, for future technologically relevant graphene based spintronic devices.
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Submitted 5 April, 2017;
originally announced April 2017.
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Spin transport in fully hexagonal boron nitride encapsulated graphene
Authors:
M. Gurram,
S. Omar,
S. Zihlmann,
P. Makk,
C. Schönenberger,
B. J. van Wees
Abstract:
We study fully hexagonal boron nitride (hBN)-encapsulated graphene spin valve devices at room temperature. The device consists of a graphene channel encapsulated between two crystalline hBN flakes; thick-hBN flake as a bottom gate dielectric substrate which masks the charge impurities from SiO2/Si substrate and single-layer thin-hBN flake as a tunnel barrier. Full encapsulation prevents the graphe…
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We study fully hexagonal boron nitride (hBN)-encapsulated graphene spin valve devices at room temperature. The device consists of a graphene channel encapsulated between two crystalline hBN flakes; thick-hBN flake as a bottom gate dielectric substrate which masks the charge impurities from SiO2/Si substrate and single-layer thin-hBN flake as a tunnel barrier. Full encapsulation prevents the graphene from coming in contact with any polymer/chemical during the lithography and thus gives homogeneous charge and spin transport properties across different regions of the encapsulated graphene. Further, even with the multiple electrodes in between the injection and the detection electrodes which are in conductivity mismatch regime, we observe spin transport over 12.5 um long distance under the thin-hBN encapsulated graphene channel, demonstrating the clean interface and the pin-hole free nature of the thin-hBN as an efficient tunnel barrier.
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Submitted 14 March, 2016;
originally announced March 2016.
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Spin Relaxation in Graphene with self-assembled Cobalt Porphyrin Molecules
Authors:
S. Omar,
M. Gurram,
I. J. Vera-Marun,
X. Zhang,
E. H. Huisman,
A. Kaverzin,
B. L. Feringa,
B. J. van Wees
Abstract:
In graphene spintronics, interaction of localized magnetic moments with the electron spins paves a new way to explore the underlying spin relaxation mechanism. A self-assembled layer of organic cobalt-porphyrin (CoPP) molecules on graphene provides a desired platform for such studies via the magnetic moments of porphyrin-bound cobalt atoms. In this work a study of spin transport properties of grap…
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In graphene spintronics, interaction of localized magnetic moments with the electron spins paves a new way to explore the underlying spin relaxation mechanism. A self-assembled layer of organic cobalt-porphyrin (CoPP) molecules on graphene provides a desired platform for such studies via the magnetic moments of porphyrin-bound cobalt atoms. In this work a study of spin transport properties of graphene spin-valve devices functionalized with such CoPP molecules as a function of temperature via non-local spin-valve and Hanle spin precession measurements is reported. For the functionalized (molecular) devices, we observe a slight decrease in the spin relaxation time (τs), which could be an indication of enhanced spin-flip scattering of the electron spins in graphene in the presence of the molecular magnetic moments. The effect of the molecular layer is masked for low quality samples (low mobility), possibly due to dominance of Elliot-Yafet (EY) type spin relaxation mechanisms.
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Submitted 18 June, 2015;
originally announced June 2015.
