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Brightening dark excitons and trions in systems with a Mexican-hat energy dispersion: example of InSe
Authors:
Lewis J. Burke,
Mark T. Greenaway,
Joseph J. Betouras
Abstract:
We investigate the properties of momentum-dark excitons and trions formed in two-dimensional (2D) materials that exhibit an inverted Mexican-hat-shaped dispersion relation, taking monolayer InSe as an example. We employ variational techniques to obtain the momentum-dark and bright ground-states (non-zero and zero quasiparticle momenta, respectively). These states are of particular interest due to…
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We investigate the properties of momentum-dark excitons and trions formed in two-dimensional (2D) materials that exhibit an inverted Mexican-hat-shaped dispersion relation, taking monolayer InSe as an example. We employ variational techniques to obtain the momentum-dark and bright ground-states (non-zero and zero quasiparticle momenta, respectively). These states are of particular interest due to their peaks in the quasiparticle density of states, the largest contribution comes from the momentum-dark ground state due to the presence of a van Hove singularity (VHS). These momentum-dark systems require a physical process to provide the necessary momentum to become bright. We study the brightening of this state due to coupling with phonons and compute the resulting photoluminescence spectrum. This work opens new avenues of research, such as exploiting dark excitons in solar cells and other semiconductor-based optoelectronic devices.
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Submitted 12 June, 2025; v1 submitted 10 February, 2025;
originally announced February 2025.
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Extreme electron-hole drag and negative mobility in the Dirac plasma of graphene
Authors:
L. A. Ponomarenko,
Alessandro Principi,
A. D. Niblett,
Wendong Wang,
R. V. Gorbachev,
Piranavan Kumaravadive,
A. I. Berdyugin,
A. V. Ermakov,
Sergey Slizovskiy,
Kenji Watanabe,
Takashi Taniguchi,
Qi Ge,
V. I. Fal'ko,
Laurence Eaves,
M. T. Greenaway,
A. K. Geim
Abstract:
Coulomb drag between adjacent electron and hole gases has attracted considerable attention, being studied in various two-dimensional systems, including semiconductor and graphene heterostructures. Here we report measurements of electron-hole drag in the Planckian plasma that develops in monolayer graphene in the vicinity of its Dirac point above liquid-nitrogen temperatures. The frequent electron-…
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Coulomb drag between adjacent electron and hole gases has attracted considerable attention, being studied in various two-dimensional systems, including semiconductor and graphene heterostructures. Here we report measurements of electron-hole drag in the Planckian plasma that develops in monolayer graphene in the vicinity of its Dirac point above liquid-nitrogen temperatures. The frequent electron-hole scattering forces minority carriers to move against the applied electric field due to the drag induced by majority carriers. This unidirectional transport of electrons and holes results in nominally negative mobility for the minority carriers. The electron-hole drag is found to be strongest near-room temperature, despite being notably affected by phonon scattering. Our findings provide better understanding of the transport properties of charge-neutral graphene, reveal limits on its hydrodynamic description and also offer insight into quantum-critical systems in general.
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Submitted 14 October, 2024;
originally announced October 2024.
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A magnetically-induced Coulomb gap in graphene due to electron-electron interactions
Authors:
E. E. Vdovin,
M. T. Greenaway,
Yu. N. Khanin,
S. V. Morozov,
O. Makarovsky,
A. Patanè,
A. Mishchenko,
S. Slizovskiy,
V. I. Fal'ko,
A. K. Geim,
K. S. Novoselov,
L. Eaves
Abstract:
Insights into the fundamental properties of graphene's Dirac-Weyl fermions have emerged from studies of electron tunnelling transistors in which an atomically thin layer of hexagonal boron nitride (hBN) is sandwiched between two layers of high purity graphene. Here, we show that when a single defect is present within the hBN tunnel barrier, it can inject electrons into the graphene layers and its…
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Insights into the fundamental properties of graphene's Dirac-Weyl fermions have emerged from studies of electron tunnelling transistors in which an atomically thin layer of hexagonal boron nitride (hBN) is sandwiched between two layers of high purity graphene. Here, we show that when a single defect is present within the hBN tunnel barrier, it can inject electrons into the graphene layers and its sharply defined energy level acts as a high resolution spectroscopic probe of electron-electron interactions in graphene. We report a magnetic field dependent suppression of the tunnel current flowing through a single defect below temperatures of $\sim$ 2 K. This is attributed to the formation of a magnetically-induced Coulomb gap in the spectral density of electrons tunnelling into graphene due to electron-electron interactions.
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Submitted 4 July, 2023;
originally announced July 2023.
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Graphene's non-equilibrium fermions reveal Doppler-shifted magnetophonon resonances accompanied by Mach supersonic and Landau velocity effects
Authors:
M. T. Greenaway,
P. Kumaravadivel,
J. Wengraf,
L. A. Ponomarenko,
A. I. Berdyugin. J. Li,
J. H. Edgar,
R. Krishna Kumar,
A. K. Geim,
L. Eaves
Abstract:
Oscillatory magnetoresistance measurements on graphene have revealed a wealth of novel physics. These phenomena are typically studied at low currents. At high currents, electrons are driven far from equilibrium with the atomic lattice vibrations so that their kinetic energy can exceed the thermal energy of the phonons. Here, we report three non-equilibrium phenomena in monolayer graphene at high c…
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Oscillatory magnetoresistance measurements on graphene have revealed a wealth of novel physics. These phenomena are typically studied at low currents. At high currents, electrons are driven far from equilibrium with the atomic lattice vibrations so that their kinetic energy can exceed the thermal energy of the phonons. Here, we report three non-equilibrium phenomena in monolayer graphene at high currents: (i) a "Doppler-like" shift and splitting of the frequencies of the transverse acoustic (TA) phonons emitted when the electrons undergo inter-Landau level (LL) transitions; (ii) an intra-LL Mach effect with the emission of TA phonons when the electrons approach supersonic speed, and (iii) the onset of elastic inter-LL transitions at a critical carrier drift velocity, analogous to the superfluid Landau velocity. All three quantum phenomena can be unified in a single resonance equation. They offer avenues for research on out-of-equilibrium phenomena in other two-dimensional fermion systems.
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Submitted 19 October, 2021;
originally announced October 2021.
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Out-of-equilibrium criticalities in graphene superlattices
Authors:
Alexey I. Berdyugin,
Na Xin,
Haoyang Gao,
Sergey Slizovskiy,
Zhiyu Dong,
Shubhadeep Bhattacharjee,
P. Kumaravadivel,
Shuigang Xu,
L. A. Ponomarenko,
Matthew Holwill,
D. A. Bandurin,
Minsoo Kim,
Yang Cao,
M. T. Greenaway,
K. S. Novoselov,
I. V. Grigorieva,
K. Watanabe,
T. Taniguchi,
V. I. Fal'ko,
L. S. Levitov,
R. Krishna Kumar,
A. K. Geim
Abstract:
In thermodynamic equilibrium, current in metallic systems is carried by electronic states near the Fermi energy whereas the filled bands underneath contribute little to conduction. Here we describe a very different regime in which carrier distribution in graphene and its superlattices is shifted so far from equilibrium that the filled bands start playing an essential role, leading to a critical-cu…
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In thermodynamic equilibrium, current in metallic systems is carried by electronic states near the Fermi energy whereas the filled bands underneath contribute little to conduction. Here we describe a very different regime in which carrier distribution in graphene and its superlattices is shifted so far from equilibrium that the filled bands start playing an essential role, leading to a critical-current behavior. The criticalities develop upon the velocity of electron flow reaching the Fermi velocity. Key signatures of the out-of-equilibrium state are current-voltage characteristics resembling those of superconductors, sharp peaks in differential resistance, sign reversal of the Hall effect, and a marked anomaly caused by the Schwinger-like production of hot electron-hole plasma. The observed behavior is expected to be common for all graphene-based superlattices.
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Submitted 11 February, 2022; v1 submitted 23 June, 2021;
originally announced June 2021.
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Universal mobility characteristics of graphene originating from electron/hole scattering by ionised impurities
Authors:
Jonathan H. Gosling,
Oleg Makarovsky,
Feiran Wang,
Nathan D Cottam,
Mark T. Greenaway,
Amalia Patanè,
Ricky Wildman,
Christopher J. Tuck,
Lyudmila Turyanska,
T. Mark Fromhold
Abstract:
Pristine graphene and graphene-based heterostructures exhibit exceptionally high electron mobility and conductance if their surface contains few electron-scattering impurities. Here, we reveal a universal connection between graphene's carrier mobility and the variation of its electrical conductance with carrier density. Our model of graphene conductivity is based on a convolution of carrier densit…
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Pristine graphene and graphene-based heterostructures exhibit exceptionally high electron mobility and conductance if their surface contains few electron-scattering impurities. Here, we reveal a universal connection between graphene's carrier mobility and the variation of its electrical conductance with carrier density. Our model of graphene conductivity is based on a convolution of carrier density and its uncertainty, which reproduces the observed universality. Taking a single conductance measurement as input, this model accurately predicts the full shape of the conductance versus carrier density curves for a wide range of reported graphene samples. We verify the convolution model by numerically solving the Boltzmann transport equation to analyse in detail the effects of charged impurity scattering on carrier mobility. In this model, we also include optical phonons, which relax high-energy charge carriers for small impurity densities. Our numerical and analytical results both capture the universality observed in experiment and provide a way to estimate all key transport parameters of graphene devices. Our results demonstrate how the carrier mobility can be predicted and controlled, thereby providing insights for engineering the properties of 2D materials and heterostructures.
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Submitted 16 May, 2020;
originally announced May 2020.
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Ultrafast strain-induced charge transport in semiconductor superlattices
Authors:
F. Wang,
C. L. Poyser,
M. T. Greenaway,
A. V. Akimov,
R. P. Campion,
A. J. Kent,
T. M. Fromhold,
A. G. Balanov
Abstract:
We investigate the effect of hypersonic (> 1 GHz) acoustic phonon wavepackets on electron transport in a semiconductor superlattice. Our quantum mechanical simulations demonstrate that a GHz train of picosecond deformation strain pulses propagating through a superlattice can generate current oscillations whose frequency is several times higher than that of the strain pulse train. The shape and pol…
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We investigate the effect of hypersonic (> 1 GHz) acoustic phonon wavepackets on electron transport in a semiconductor superlattice. Our quantum mechanical simulations demonstrate that a GHz train of picosecond deformation strain pulses propagating through a superlattice can generate current oscillations whose frequency is several times higher than that of the strain pulse train. The shape and polarity of the calculated current pulses agree well with experimentally measured electric signals. The calculations also explain and accurately reproduce the measured variation of the induced current pulse magnitude with the strain pulse amplitude and applied bias voltage. Our results open a route to developing acoustically-driven semiconductor superlattices as sources of millimetre and sub-millimetre electromagnetic waves.
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Submitted 26 March, 2020;
originally announced March 2020.
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Emergence and Control of Complex Behaviours in Driven Systems of Interacting Qubits with Dissipation
Authors:
A. V. Andreev,
A. G. Balanov,
T. M. Fromhold,
M. T. Greenaway,
A. E. Hramov,
W. Li,
V. V. Makarov,
A. M. Zagoskin
Abstract:
Progress in the creation of large scale, artificial quantum coherent structures demands the investigation of their nonequilibrium dynamics when strong interactions, even between remote parts, are non-perturbative. Analysis of multiparticle quantum correlations in a large system in the presence of decoherence and external driving is especially topical. Still, scaling behaviour of dynamics and relat…
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Progress in the creation of large scale, artificial quantum coherent structures demands the investigation of their nonequilibrium dynamics when strong interactions, even between remote parts, are non-perturbative. Analysis of multiparticle quantum correlations in a large system in the presence of decoherence and external driving is especially topical. Still, scaling behaviour of dynamics and related emergent phenomena are not yet well understood. We investigate how the dynamics of a driven system of several quantum elements (e.g., qubits or Rydberg atoms) changes with increasing number of elements. Surprisingly, a two-element system exhibits chaotic behaviours. For larger system sizes a highly stochastic, far from equilibrium, {\em hyperchaotic} regime emerges. Its complexity systematically scales with the size of the system, proportionally to the number of elements. Finally, we demonstrate that these chaotic dynamics can be efficiently controlled by a periodic driving field. The insights provided by our results indicate the possibility of a reduced description for the behaviour of a large quantum system in terms of the transitions between its qualitatively different dynamical regimes, which are controlled by a relatively small number of parameters, and may prove useful in the design, characterization and control of large artificial quantum structures.
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Submitted 11 November, 2020; v1 submitted 8 July, 2019;
originally announced July 2019.
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Magnetophonon spectroscopy of Dirac Fermion scattering by transverse and longitudinal acoustic phonons in graphene
Authors:
M. T. Greenaway,
R. Krishna Kumar,
P. Kumaravadivel,
A. K. Geim,
L. Eaves
Abstract:
Recently observed magnetophonon resonances in the magnetoresistance of graphene are investigated using the Kubo formalism. This analysis provides a quantitative fit to the experimental data over a wide range of carrier densities. It demonstrates the predominance of carrier scattering by low energy transverse acoustic (TA) mode phonons: the magnetophonon resonance amplitude is significantly stronge…
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Recently observed magnetophonon resonances in the magnetoresistance of graphene are investigated using the Kubo formalism. This analysis provides a quantitative fit to the experimental data over a wide range of carrier densities. It demonstrates the predominance of carrier scattering by low energy transverse acoustic (TA) mode phonons: the magnetophonon resonance amplitude is significantly stronger for the TA modes than for the longitudinal acoustic (LA) modes. We demonstrate that the LA and TA phonon speeds and the electron-phonon coupling strengths determined from the magnetophonon resonance measurements also provide an excellent fit to the measured dependence of the resistivity at zero magnetic field over a temperature range of 4-150 K. A semiclassical description of magnetophonon resonance in graphene is shown to provide a simple physical explanation for the dependence of the magneto-oscillation period on carrier density. The correspondence between the quantum calculation and the semiclassical model is discussed.
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Submitted 29 May, 2019; v1 submitted 9 May, 2019;
originally announced May 2019.
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Strong magnetophonon oscillations in extra-large graphene
Authors:
P. Kumaravadivel,
M. T. Greenaway,
D. Perello,
A. Berdyugin,
J. Birkbeck,
J. Wengraf,
S. Liu,
J. H. Edgar,
A. K. Geim,
L. Eaves,
R. Krishna Kumar
Abstract:
Van der Waals materials and their heterostructures offer a versatile platform for studying a variety of quantum transport phenomena due to their unique crystalline properties and the exceptional ability in tuning their electronic spectrum. However, most experiments are limited to devices that have lateral dimensions of only a few micrometres. Here, we perform magnetotransport measurements on graph…
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Van der Waals materials and their heterostructures offer a versatile platform for studying a variety of quantum transport phenomena due to their unique crystalline properties and the exceptional ability in tuning their electronic spectrum. However, most experiments are limited to devices that have lateral dimensions of only a few micrometres. Here, we perform magnetotransport measurements on graphene/hexagonal boron-nitride Hall bars and show that wider devices reveal additional quantum effects. In devices wider than ten micrometres we observe distinct magnetoresistance oscillations that are caused by resonant scattering of Landau-quantised Dirac electrons by acoustic phonons in graphene. The study allows us to accurately determine graphene's low energy phonon dispersion curves and shows that transverse acoustic modes cause most of phonon scattering. Our work highlights the crucial importance of device width when probing quantum effects and also demonstrates a precise, spectroscopic method for studying electron-phonon interactions in van der Waals heterostructures.
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Submitted 1 August, 2019; v1 submitted 1 May, 2019;
originally announced May 2019.
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Prospects for strongly coupled atom-photon quantum nodes
Authors:
N Cooper,
C Briddon,
E Da Ros,
V Naniyil,
M Greenaway,
L Hackermueller
Abstract:
We discuss the trapping of cold atoms within microscopic voids drilled perpendicularly through the axis of an optical waveguide. The dimensions of the voids considered are between 1 and 40 optical wavelengths. By simulating light transmission across the voids, we find that appropriate shaping of the voids can substantially reduce the associated loss of optical power. Our results demonstrate that t…
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We discuss the trapping of cold atoms within microscopic voids drilled perpendicularly through the axis of an optical waveguide. The dimensions of the voids considered are between 1 and 40 optical wavelengths. By simulating light transmission across the voids, we find that appropriate shaping of the voids can substantially reduce the associated loss of optical power. Our results demonstrate that the formation of an optical cavity around such a void could produce strong coupling between the atoms and the guided light. By bringing multiple atoms into a single void and exploiting collective enhancement, cooperativities ~400 or more should be achieveable. The simulations are carried out using a finite difference time domain method. Methods for the production of such a void and the trapping of cold atoms within it are also discussed.
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Submitted 3 April, 2019; v1 submitted 14 December, 2018;
originally announced December 2018.
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Tunnel spectroscopy of localised electronic states in hexagonal boron nitride
Authors:
M. T. Greenaway,
E. E. Vdovin,
D. Ghazaryan,
A. Misra,
A. Mishchenko,
Y. Cao,
Z. Wang,
J. R. Wallbank,
M. Holwill,
Yu. N. Khanin,
S. V. Morozov,
K. Watanabe,
T. Taniguchi,
O. Makarovsky,
T. M. Fromhold,
A. Patanè,
A. K. Geim,
V. I. Fal'ko,
K. S. Novoselov,
L. Eaves
Abstract:
Hexagonal boron nitride (hBN) is a large band gap layered crystal, frequently incorporated in van der Waals (vdW) heterostructures as an insulating or tunnel barrier. Localised states with energies within its band gap can emit visible light, relevant to applications in nanophotonics and quantum information processing. However, they also give rise to conducting channels, which can induce electrical…
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Hexagonal boron nitride (hBN) is a large band gap layered crystal, frequently incorporated in van der Waals (vdW) heterostructures as an insulating or tunnel barrier. Localised states with energies within its band gap can emit visible light, relevant to applications in nanophotonics and quantum information processing. However, they also give rise to conducting channels, which can induce electrical breakdown when a large voltage is applied. Here we use gated tunnel transistors to study resonant electron tunnelling through the localised states in few atomic-layer hBN barriers sandwiched between two monolayer graphene electrodes. The measurements are used to determine the energy, linewidth, tunnelling transmission probability, and depth within the barrier of more than 50 distinct localised states. A three-step process of electron percolation through two spatially separated localised states is also investigated.
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Submitted 14 December, 2018; v1 submitted 2 October, 2018;
originally announced October 2018.
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Magnon-assisted tunnelling in van der Waals heterostructures based on CrBr3
Authors:
Davit Ghazaryan,
Mark T. Greenaway,
Zihao Wang,
Victor H. Guarochico-Moreira,
Ivan J. Vera-Marun,
Jun Yin,
Yuanxun Liao,
Serge V. Morozov,
Oleg Kristanovski,
Alexander I. Lichtenstein,
Mikhail I. Katsnelson,
Fred Withers,
Artem Mishchenko,
Laurence Eaves,
Andre K. Geim,
Kostya S. Novoselov,
Abhishek Misra
Abstract:
The growing family of two-dimensional (2D) materials that are now available can be used to assemble van der Waals heterostructures with a wide range of properties. Of particular interest are tunnelling heterostructures, which have been used to study the electronic states both in the tunnelling barrier and in the emitter and collector contacts. Recently, 2D ferromagnets have been studied theoretica…
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The growing family of two-dimensional (2D) materials that are now available can be used to assemble van der Waals heterostructures with a wide range of properties. Of particular interest are tunnelling heterostructures, which have been used to study the electronic states both in the tunnelling barrier and in the emitter and collector contacts. Recently, 2D ferromagnets have been studied theoretically and experimentally. Here we investigate electron tunnelling through a thin (2-6 layers) ferromagnetic CrBr3 barrier. For devices with non-magnetic barriers, conservation of momentum can be relaxed by phonon-assisted tunnelling or by tunnelling through localised states. In the case of our ferromagnetic barrier the dominant tunnelling mechanisms are the emission of magnons at low temperatures or scattering of electrons on localised magnetic excitations above the Curie temperature. Tunnelling with magnon emission offers the possibility of injecting spin into the collector electrode.
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Submitted 12 May, 2018; v1 submitted 6 March, 2018;
originally announced March 2018.
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Effects of classical stochastic webs on the quantum dynamics of cold atomic gases in a moving optical lattice
Authors:
N. Welch,
M. T. Greenaway,
T. M. Fromhold
Abstract:
We introduce and investigate a system that uses temporal resonance-induced phase space pathways to create strong coupling between an atomic Bose-Einstein condensate and a traveling optical lattice potential. We show that these pathways thread both the classical and quantum phase space of the atom cloud, even when the optical lattice potential is arbitrarily weak. The topology of the pathways, whic…
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We introduce and investigate a system that uses temporal resonance-induced phase space pathways to create strong coupling between an atomic Bose-Einstein condensate and a traveling optical lattice potential. We show that these pathways thread both the classical and quantum phase space of the atom cloud, even when the optical lattice potential is arbitrarily weak. The topology of the pathways, which form web-like patterns, can by controled by changing the amplitude and period of the optical lattice. In turn, this control can be used to increase and limit the BEC's center-of-mass kinetic energy to pre-specified values. Surprisingly, the strength of the atom-lattice interaction and resulting BEC heating of the center-of-mass motion is enhanced by the repulsive inter-atomic interactions.
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Submitted 27 September, 2017; v1 submitted 1 August, 2017;
originally announced August 2017.
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Tuning the valley and chiral quantum state of Dirac electrons in van der Waals heterostructures
Authors:
J. R. Wallbank,
D. Ghazaryan,
A. Misra,
Y. Cao,
J. S. Tu,
B. A. Piot,
M. Potemski,
S. Pezzini,
S. Wiedmann,
U. Zeitler,
T. L. M. Lane,
S. V. Morozov,
M. T. Greenaway,
L. Eaves,
A. K. Geim,
V. I. Fal'ko,
K. S. Novoselov,
A. Mishchenko
Abstract:
Chirality is a fundamental property of electrons with the relativistic spectrum found in graphene and topological insulators. It plays a crucial role in relativistic phenomena, such as Klein tunneling, but it is difficult to visualize directly. Here we report the direct observation and manipulation of chirality and pseudospin polarization in the tunneling of electrons between two almost perfectly…
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Chirality is a fundamental property of electrons with the relativistic spectrum found in graphene and topological insulators. It plays a crucial role in relativistic phenomena, such as Klein tunneling, but it is difficult to visualize directly. Here we report the direct observation and manipulation of chirality and pseudospin polarization in the tunneling of electrons between two almost perfectly aligned graphene crystals. We use a strong in-plane magnetic field as a tool to resolve the contributions of the chiral electronic states that have a phase difference between the two components of their vector wavefunction. Our experiments not only shed light on chirality, but also demonstrate a technique for preparing graphene's Dirac electrons in a particular quantum chiral state in a selected valley.
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Submitted 8 August, 2016;
originally announced August 2016.
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Phonon-assisted resonant tunneling of electrons in graphene-boron nitride transistors
Authors:
E. E. Vdovin,
A. Mishchenko,
M. T. Greenaway,
M. J. Zhu,
D. Ghazaryan,
A. Misra,
Y. Cao,
S. V. Morozov,
O. Makarovsky,
A. Patanè,
G. J. Slotman,
M. I. Katsnelson,
A. K. Geim,
K. S. Novoselov,
L. Eaves
Abstract:
We observe a series of sharp resonant features in the differential conductance of graphene-hexagonal boron nitride-graphene tunnel transistors over a wide range of bias voltages between $\sim$10 and 200 mV. We attribute them to electron tunneling assisted by the emission of phonons of well-defined energy. The bias voltages at which they occur are insensitive to the applied gate voltage and hence i…
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We observe a series of sharp resonant features in the differential conductance of graphene-hexagonal boron nitride-graphene tunnel transistors over a wide range of bias voltages between $\sim$10 and 200 mV. We attribute them to electron tunneling assisted by the emission of phonons of well-defined energy. The bias voltages at which they occur are insensitive to the applied gate voltage and hence independent of the carrier densities in the graphene electrodes, so plasmonic effects can be ruled out. The phonon energies corresponding to the resonances are compared with the lattice dispersion curves of graphene-boron nitride heterostructures and are close to peaks in the single phonon density of states.
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Submitted 8 December, 2015; v1 submitted 7 December, 2015;
originally announced December 2015.
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Resonant tunnelling between the chiral Landau states of twisted graphene lattices
Authors:
M. T. Greenaway,
E. E. Vdovin,
A. Mishchenko,
O. Makarovsky,
A. Patanè,
J. R. Wallbank,
Y. Cao,
A. V. Kretinin,
M. J. Zhu,
S. V. Morozov,
V. I. Fal'ko,
K. S. Novoselov,
A. K. Geim,
T. M. Fromhold,
L. Eaves
Abstract:
A new class of multilayered functional materials has recently emerged in which the component atomic layers are held together by weak van der Waals forces that preserve the structural integrity and physical properties of each layer. An exemplar of such a structure is a transistor device in which relativistic Dirac Fermions can resonantly tunnel through a boron nitride barrier, a few atomic layers t…
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A new class of multilayered functional materials has recently emerged in which the component atomic layers are held together by weak van der Waals forces that preserve the structural integrity and physical properties of each layer. An exemplar of such a structure is a transistor device in which relativistic Dirac Fermions can resonantly tunnel through a boron nitride barrier, a few atomic layers thick, sandwiched between two graphene electrodes. An applied magnetic field quantises graphene's gapless conduction and valence band states into discrete Landau levels, allowing us to resolve individual inter-Landau level transitions and thereby demonstrate that the energy, momentum and chiral properties of the electrons are conserved in the tunnelling process. We also demonstrate that the change in the semiclassical cyclotron trajectories, following a tunnelling event, is a form of Klein tunnelling for inter-layer transitions.
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Submitted 21 October, 2015; v1 submitted 21 September, 2015;
originally announced September 2015.
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Graphene-hexagonal boron nitride resonant tunneling diodes as high-frequency oscillators
Authors:
J. Gaskell,
L. Eaves,
K. S. Novoselov,
A. Mishchenko,
A. K. Geim,
T. M. Fromhold,
M. T. Greenaway
Abstract:
We assess the potential of two-terminal graphene-hBN-graphene resonant tunneling diodes as high-frequency oscillators, using self-consistent quantum transport and electrostatic simulations to determine the time-dependent response of the diodes in a resonant circuit. We quantify how the frequency and power of the current oscillations depend on the diode and circuit parameters including the doping o…
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We assess the potential of two-terminal graphene-hBN-graphene resonant tunneling diodes as high-frequency oscillators, using self-consistent quantum transport and electrostatic simulations to determine the time-dependent response of the diodes in a resonant circuit. We quantify how the frequency and power of the current oscillations depend on the diode and circuit parameters including the doping of the graphene electrodes, device geometry, alignment of the graphene lattices, and the circuit impedances. Our results indicate that current oscillations with frequencies of up to several hundred GHz should be achievable.
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Submitted 22 March, 2016; v1 submitted 16 June, 2015;
originally announced June 2015.
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Twist-controlled resonant tunnelling in graphene-boron nitride-graphene heterostructures
Authors:
A. Mishchenko,
J. S. Tu,
Y. Cao,
R. V. Gorbachev,
J. R. Wallbank,
M. T. Greenaway,
V. E. Morozov,
S. V. Morozov,
M. J. Zhu,
S. L. Wong,
F. Withers,
C. R. Woods,
Y. -J. Kim,
K. Watanabe,
T. Taniguchi,
E. E. Vdovin,
O. Makarovsky,
T. M. Fromhold,
V. I. Falko,
A. K. Geim,
L. Eaves,
K. S. Novoselov
Abstract:
Recent developments in the technology of van der Waals heterostructures made from two-dimensional atomic crystals have already led to the observation of new physical phenomena, such as the metal-insulator transition and Coulomb drag, and to the realisation of functional devices, such as tunnel diodes, tunnel transistors and photovoltaic sensors. An unprecedented degree of control of the electronic…
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Recent developments in the technology of van der Waals heterostructures made from two-dimensional atomic crystals have already led to the observation of new physical phenomena, such as the metal-insulator transition and Coulomb drag, and to the realisation of functional devices, such as tunnel diodes, tunnel transistors and photovoltaic sensors. An unprecedented degree of control of the electronic properties is available not only by means of the selection of materials in the stack but also through the additional fine-tuning achievable by adjusting the built-in strain and relative orientation of the component layers. Here we demonstrate how careful alignment of the crystallographic orientation of two graphene electrodes, separated by a layer of hexagonal boron nitride (hBN) in a transistor device, can achieve resonant tunnelling with conservation of electron energy, momentum and, potentially, chirality. We show how the resonance peak and negative differential conductance in the device characteristics induces a tuneable radio-frequency oscillatory current which has potential for future high frequency technology.
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Submitted 8 September, 2014;
originally announced September 2014.
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Resonant tunnelling and negative differential conductance in graphene transistors
Authors:
L. Britnell,
R. V. Gorbachev,
A. K. Geim,
L. A. Ponomarenko,
A. Mishchenko,
M. T. Greenaway,
T. M. Fromhold,
K. S. Novoselov,
L. Eaves
Abstract:
The chemical stability of graphene and other free-standing two-dimensional crystals means that they can be stacked in different combinations to produce a new class of functional materials, designed for specific device applications. Here we report resonant tunnelling of Dirac fermions through a boron nitride barrier, a few atomic layers thick, sandwiched between two graphene electrodes. The resonan…
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The chemical stability of graphene and other free-standing two-dimensional crystals means that they can be stacked in different combinations to produce a new class of functional materials, designed for specific device applications. Here we report resonant tunnelling of Dirac fermions through a boron nitride barrier, a few atomic layers thick, sandwiched between two graphene electrodes. The resonant peak in the device characteristics occurs when the electronic spectra of the two electrodes are aligned. The resulting negative differential conductance persists up to room temperature and is gate voltage-tuneable due to graphene's unique Dirac-like spectrum. Whereas conventional resonant tunnelling devices comprising a quantum well sandwiched between two tunnel barriers are tens of nanometres thick, the tunnelling carriers in our devices cross only a few atomic layers, offering the prospect of ultra-fast transit times. This feature, combined with the multi-valued form of the device characteristics, has potential for applications in high-frequency and logic devices.
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Submitted 1 May, 2013; v1 submitted 27 March, 2013;
originally announced March 2013.
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Resonant control of cold-atom transport through two optical lattices with a constant relative speed
Authors:
M. T. Greenaway,
A. G. Balanov,
T. M. Fromhold
Abstract:
We show theoretically that the dynamics of cold atoms in the lowest energy band of a stationary optical lattice can be transformed and controlled by a second, weaker, periodic potential moving at a constant speed along the axis of the stationary lattice. The atom trajectories exhibit complex behavior, which depends sensitively on the amplitude and speed of the propagating lattice. When the speed a…
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We show theoretically that the dynamics of cold atoms in the lowest energy band of a stationary optical lattice can be transformed and controlled by a second, weaker, periodic potential moving at a constant speed along the axis of the stationary lattice. The atom trajectories exhibit complex behavior, which depends sensitively on the amplitude and speed of the propagating lattice. When the speed and amplitude of the moving potential are low, the atoms are dragged through the static lattice and perform drifting orbits with frequencies an order of magnitude higher than that corresponding to the moving potential. Increasing either the speed or amplitude of the moving lattice induces Bloch-like oscillations within the energy band of the static lattice, which exhibit complex resonances at critical values of the system parameters. In some cases, a very small change in these parameters can reverse the atom's direction of motion. In order to understand these dynamics we present an analytical model, which describes the key features of the atom transport and also accurately predicts the positions of the resonant features in the atom's phase space. The abrupt controllable transitions between dynamical regimes, and the associated set of resonances, provide a mechanism for transporting atoms between precise locations in a lattice: as required for using cold atoms to simulate condensed matter or as a stepping stone to quantum information processing. The system also provides a direct quantum simulator of acoustic waves propagating through semiconductor nanostructures in sound analogs of the optical laser (SASER).
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Submitted 7 January, 2013;
originally announced January 2013.
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Controlling high-frequency collective electron dynamics via single-particle complexity
Authors:
N. Alexeeva,
M. T. Greenaway,
A. G. Balanov,
O. Makarovsky,
A. Patanè,
M. B. Gaifullin,
F. Kusmartsev,
T. M. Fromhold
Abstract:
We demonstrate, through experiment and theory, enhanced high-frequency current oscillations due to magnetically-induced conduction resonances in superlattices. Strong increase in the ac power originates from complex single-electron dynamics, characterized by abrupt resonant transitions between unbound and localized trajectories, which trigger and shape propagating charge domains. Our data demonstr…
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We demonstrate, through experiment and theory, enhanced high-frequency current oscillations due to magnetically-induced conduction resonances in superlattices. Strong increase in the ac power originates from complex single-electron dynamics, characterized by abrupt resonant transitions between unbound and localized trajectories, which trigger and shape propagating charge domains. Our data demonstrate that external fields can tune the collective behavior of quantum particles by imprinting configurable patterns in the single-particle classical phase space.
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Submitted 21 July, 2012;
originally announced July 2012.
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Effect of temperature on resonant electron transport through stochastic conduction channels in superlattices
Authors:
A. O. Selskii,
A. A. Koronovskii,
A. E. Hramov,
O. I. Moskalenko,
K. N. Alekseev,
M. T. Greenaway,
T. M. Fromhold,
A. V. Shorokhov,
N. N. Khvastunov,
A. G. Balanov
Abstract:
We show that resonant electron transport in semiconductor superlattices with an applied electric and tilted magnetic field can, surprisingly, become more pronounced as the lattice and conduction electron temperature increases from 4.2 K to room temperature and beyond. It has previously been demonstrated that at certain critical field parameters, the semiclassical trajectories of electrons in the l…
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We show that resonant electron transport in semiconductor superlattices with an applied electric and tilted magnetic field can, surprisingly, become more pronounced as the lattice and conduction electron temperature increases from 4.2 K to room temperature and beyond. It has previously been demonstrated that at certain critical field parameters, the semiclassical trajectories of electrons in the lowest miniband of the superlattice change abruptly from fully localised to completely unbounded. The unbounded electron orbits propagate through intricate web patterns, known as stochastic webs, in phase space, which act as conduction channels for the electrons and produce a series of resonant peaks in the electron drift velocity versus electric field curves. Here, we show that increasing the lattice temperature strengthens these resonant peaks due to a subtle interplay between thermal population of the conduction channels and transport along them. This enhances both the electron drift velocity and the influence of the stochastic webs on the current-voltage characteristics, which we calculate by making self-consistent solutions of the coupled electron transport and Poisson equations throughout the superlattice. These solutions reveal that increasing the temperature also transforms the collective electron dynamics by changing both the threshold voltage required for the onset of self-sustained current oscillations, produced by propagating charge domains, and the oscillation frequency.
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Submitted 12 August, 2011;
originally announced August 2011.
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Controlling and enhancing THz collective electron dynamics in superlattices by chaos-assisted miniband transport
Authors:
M. T. Greenaway,
A. G. Balanov,
E. Schoell,
T. M. Fromhold
Abstract:
We show that a tilted magnetic field transforms the structure and THz dynamics of charge domains in a biased semiconductor superlattice. At critical field values, strong coupling between the Bloch and cyclotron motion of a miniband electron triggers chaotic delocalization of the electron orbits, causing strong resonant enhancement of their drift velocity. This dramatically affects the collective e…
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We show that a tilted magnetic field transforms the structure and THz dynamics of charge domains in a biased semiconductor superlattice. At critical field values, strong coupling between the Bloch and cyclotron motion of a miniband electron triggers chaotic delocalization of the electron orbits, causing strong resonant enhancement of their drift velocity. This dramatically affects the collective electron behavior by inducing multiple propagating charge domains and GHz-THz current oscillations with frequencies ten times higher than with no tilted field.
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Submitted 27 May, 2010; v1 submitted 22 May, 2009;
originally announced May 2009.
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Using acoustic waves to induce high-frequency current oscillations in superlattices
Authors:
M. T. Greenaway,
A. G. Balanov,
D. Fowler,
A. J. Kent,
T. M. Fromhold
Abstract:
We show that GHz acoustic waves in semiconductor superlattices can induce THz electron dynamics that depend critically on the wave amplitude. Below a threshold amplitude, the acoustic wave drags electrons through the superlattice with a peak drift velocity overshooting that produced by a static electric field. In this regime, single electrons perform drifting orbits with THz frequency components.…
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We show that GHz acoustic waves in semiconductor superlattices can induce THz electron dynamics that depend critically on the wave amplitude. Below a threshold amplitude, the acoustic wave drags electrons through the superlattice with a peak drift velocity overshooting that produced by a static electric field. In this regime, single electrons perform drifting orbits with THz frequency components. When the wave amplitude exceeds the critical threshold, an abrupt onset of Bloch-like oscillations causes negative differential velocity. The acoustic wave also affects the collective behavior of the electrons by causing the formation of localised electron accumulation and depletion regions, which propagate through the superlattice, thereby producing self-sustained current oscillations even for very small wave amplitudes. We show that the underlying single-electron dynamics, in particular the transition between the acoustic wave dragging and Bloch oscillation regimes, strongly influence the spatial distribution of the electrons and the form of the current oscillations. In particular, the amplitude of the current oscillations depends non-monotonically on the strength of the acoustic wave, reflecting the variation of the single-electron drift velocity.
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Submitted 27 May, 2010; v1 submitted 14 March, 2008;
originally announced March 2008.
