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When water phase matters: its effect on the stopping cross section for proton therapy and astrophysics
Authors:
F. Matias,
N. E. Koval,
P. de Vera,
R. Garcia-Molina,
I. Abril,
J. M. B. Shorto,
H. Yoriyaz,
J. J. N. Pereira,
T. F. Silva,
M. H. Tabacniks,
M. Vos,
P. L. Grande
Abstract:
Accurately quantifying the energy loss rate of proton beams in liquid water is crucial for the precise application and improvement of proton therapy, whereas the slowing down of proton in water ices also plays an important role in astrophysics. However, precisely determining the electronic stopping power, particularly for the liquid phase, has been elusive so far. Experimental techniques are diffi…
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Accurately quantifying the energy loss rate of proton beams in liquid water is crucial for the precise application and improvement of proton therapy, whereas the slowing down of proton in water ices also plays an important role in astrophysics. However, precisely determining the electronic stopping power, particularly for the liquid phase, has been elusive so far. Experimental techniques are difficult to apply to volatile liquids, and the availability of sufficient reliable measurements has been limited to the solid and vapor phases. The accuracy of current models is typically limited to proton energies just above the energy-loss maximum, making it difficult to predict radiation effects at an energy range of special relevance. We elucidate the phase differences in proton energy loss in water in a wide energy range (0.001-10 MeV) by means of real-time time-dependent density functional theory combined with the Penn method. This non-perturbative model, more computationally-efficient than current approaches, describes the phase effects in water in excellent agreement with available experimental data, revealing clear deviations around the maximum of the stopping power curve and below. As an important outcome, our calculations reveal that proton stopping quantities of liquid water and amorphous ice are identical, in agreement with recent similar observations for low-energy electrons, pointing out to this equivalence for all charged particles. This could help to overcome the limitation in obtaining reliable experimental information for the biologically-relevant liquid water target.
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Submitted 29 May, 2025;
originally announced May 2025.
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Comment on 'Anomalies in the Electronic Stopping of Slow Antiprotons in LiF', arXiv:2501.14381
Authors:
G. Schiwietz,
P. L. Grande
Abstract:
This work contains detailed discussions on the contents of Phys. Rev. Lett. 134, 076401 (2025), in the following denoted PRL134. In this comment, we revisit and elaborate on the Adiabatic Ionization Model (AIM) for the energy loss of antiparticles in matter, with particular reference to its theoretical foundation as established previously. The AIM framework plays a central role in describing the i…
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This work contains detailed discussions on the contents of Phys. Rev. Lett. 134, 076401 (2025), in the following denoted PRL134. In this comment, we revisit and elaborate on the Adiabatic Ionization Model (AIM) for the energy loss of antiparticles in matter, with particular reference to its theoretical foundation as established previously. The AIM framework plays a central role in describing the ionization dynamics in the low-velocity regime considered by the authors of PRL134. Calculated AIM results for the energy loss of antiprotons in LiF crystals are compared to experimental data and different other models, pointing to severe problems of the PRL134 results.
Beyond this specific comparative theoretical investigation, we critically examine several statements and assumptions made in PRL134. Certain claims presented therein appear to be inconsistent with established theoretical principles or are insufficiently justified by the data and arguments provided. As such, we believe that further clarification, and in some cases, a more rigorous justification, is necessary to substantiate those points.
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Submitted 30 April, 2025;
originally announced April 2025.
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Deeper-band electron contributions to stopping power of silicon for low-energy ions
Authors:
F. Matias,
P. L. Grande,
N. E. Koval,
J. M. B. Shorto,
T. F. Silva,
N. R. Arista
Abstract:
This study provides accurate results for the electronic stopping cross-sections of H, He, N, and Ne in silicon in low to intermediate energy ranges using various non-perturbative theoretical methods, including real-time time-dependent density functional theory, transport cross-section, and induced-density approach. Recent experimental findings [Ntemou \textit{et al.}, Phys. Rev. B {\bf 107}, 15514…
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This study provides accurate results for the electronic stopping cross-sections of H, He, N, and Ne in silicon in low to intermediate energy ranges using various non-perturbative theoretical methods, including real-time time-dependent density functional theory, transport cross-section, and induced-density approach. Recent experimental findings [Ntemou \textit{et al.}, Phys. Rev. B {\bf 107}, 155145 (2023)] revealed discrepancies between the estimates of density functional theory and observed values. We show that these discrepancies vanish by considering the nonuniform electron density of the silicon deeper bands for ion velocities approaching zero ($v \to 0$). This indicates that mechanisms such as ``elevator'' and ``promotion,'' which can dynamically excite deeper-band electrons, are active, enabling a localized free electron gas to emulate ion energy loss, as pointed out by [Lim \textit{et al.}, Phys. Rev. Lett. {\bf 116}, 043201 (2016)]. The observation and the description of a velocity-proportionality breakdown in electronic stopping cross-sections at very low velocities are considered to be a signature of the deeper-band electrons' contributions.
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Submitted 13 May, 2024;
originally announced May 2024.
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Modeling of Proton Interaction with Organic Polymers: Implications for Cancer Therapy and Beyond
Authors:
F. Matias,
T. F. Silva,
N. E. Koval,
J. J. N. Pereira,
P. C. G. Antunes,
P. T. D. Siqueira,
M. H. Tabacniks,
H. Yoriyaz,
J. M. B. Shorto,
P. L. Grande
Abstract:
This comprehensive study delves into the intricate interplay between protons and organic polymers, offering insights into proton therapy in cancer treatment. Focusing on the influence of the spatial electron density distribution on stopping power estimates, we employed time-dependent density functional theory (TDDFT), coupled with the Penn method. Surprisingly, the assumption of electron density h…
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This comprehensive study delves into the intricate interplay between protons and organic polymers, offering insights into proton therapy in cancer treatment. Focusing on the influence of the spatial electron density distribution on stopping power estimates, we employed time-dependent density functional theory (TDDFT), coupled with the Penn method. Surprisingly, the assumption of electron density homogeneity in polymers is fundamentally flawed, resulting in an overestimation of stopping power values at energies below 2 MeV, approximately. Moreover, Bragg's rule application in specific compounds exhibited significant deviations from experimental data in the Bragg peak region, challenging established norms.
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Submitted 24 January, 2024; v1 submitted 5 January, 2024;
originally announced January 2024.
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Trajectory dependence of electronic energy-loss straggling at keV ion energies
Authors:
Svenja Lohmann,
Radek Holeňák,
Pedro L. Grande,
Daniel Primetzhofer
Abstract:
We have measured the electronic energy-loss straggling of protons, helium, boron and silicon ions in silicon using a transmission time-of-flight approach. Ions with velocities between 0.25 and 1.6 times the Bohr velocity were transmitted through single-crystalline Si(100) nanomembranes in either channelling or random geometry to study the impact parameter dependence of energy-loss straggling. Nucl…
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We have measured the electronic energy-loss straggling of protons, helium, boron and silicon ions in silicon using a transmission time-of-flight approach. Ions with velocities between 0.25 and 1.6 times the Bohr velocity were transmitted through single-crystalline Si(100) nanomembranes in either channelling or random geometry to study the impact parameter dependence of energy-loss straggling. Nuclear and path length contributions to the straggling were determined with the help of Monte Carlo simulations. Our results exhibit an increase in straggling with increasing ion velocity for channelled trajectories for all projectiles as well as for protons and helium in random geometry. In contrast for heavier ions, electronic straggling at low velocities does not decrease further but plateaus and even seems to increase again. We compare our experimental results with transport cross section calculations. The satisfying agreement for helium shows that electronic stopping for light ions is dominated by electron-hole pair excitations, and that the previously observed trajectory dependence can indeed be attributed to a higher mean charge state for random trajectories. No agreement is found for boron and silicon indicating the breakdown of models based solely on electron-hole pair excitations, and that local electron-promotion and charge-exchange events significantly contribute to energy loss at low velocities.
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Submitted 12 January, 2023; v1 submitted 28 September, 2022;
originally announced September 2022.
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Ion implantation in \b{eta}-Ga2O3: physics and technology
Authors:
Alena Nikolskaya,
Evgenia Okulich,
Dmitry Korolev,
Anton Stepanov,
Dmitry Nikolichev,
Alexey Mikhaylov,
David Tetelbaum,
Aleksei Almaev,
Charles Airton Bolzan,
Antônio Jr Buaczik,
Raquel Giulian,
Pedro Luis Grande,
Ashok Kumar,
Mahesh Kumar,
Daniela Gogova
Abstract:
Gallium oxide and in particular its thermodynamically stable \b{eta}-Ga2O3 phase is within the most exciting materials in research and technology nowadays due to its unique properties, such as an ultra-wide band gap and a very high breakdown electric field, finding a number of applications in electronics and optoelectronics. Ion implantation is a traditional technological method used in these fiel…
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Gallium oxide and in particular its thermodynamically stable \b{eta}-Ga2O3 phase is within the most exciting materials in research and technology nowadays due to its unique properties, such as an ultra-wide band gap and a very high breakdown electric field, finding a number of applications in electronics and optoelectronics. Ion implantation is a traditional technological method used in these fields, and its well-known advantages can contribute greatly to the rapid development of physics and technology of Ga2O3-based materials and devices. Here, the current status of ion beam implantation in \b{eta}-Ga2O3 is reviewed. The main attention is paid to the results of experimental study of damage under ion irradiation and the properties of Ga2O3 layers doped by ion implantation. The results of ab initio theoretical calculations of the impurities and defects parameters are briefly presented, and the physical principles of a number of analytical methods used to study implanted gallium oxide layers are highlighted. The use of ion implantation in the development of such Ga2O3-based devices as metal oxide field effect transistors, Schottky barrier diodes, and solar-blind UV detectors, is described together with systematical analysis of the achieved values of their characteristics. Finally, the most important challenges to be overcome in this field of science and technology are discussed.
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Submitted 26 February, 2021;
originally announced February 2021.
