Dynamics of Li deposition on epitaxial graphene/Ru(0001) islands
Authors:
J. E. Prieto,
M. A. González-Barrio,
E. García-Martín,
G. D. Soria,
L. Morales de la Garza,
J. de la Figuera
Abstract:
Li metal has been deposited on the surface of a Ru(0001) single crystal containing patches of monolayer-thick epitaxial graphene islands. The use of low-energy electron microscopy and diffraction allowed us to {\em in situ} monitor the process by measuring the local work function as well as to study the system in real and reciprocal space, comparing the changes taking place on the graphene with th…
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Li metal has been deposited on the surface of a Ru(0001) single crystal containing patches of monolayer-thick epitaxial graphene islands. The use of low-energy electron microscopy and diffraction allowed us to {\em in situ} monitor the process by measuring the local work function as well as to study the system in real and reciprocal space, comparing the changes taking place on the graphene with those on the bare Ru(0001) surface. It is found that Li deposition decreases the work function of the graphene islands but to a much smaller degree than of the Ru(0001) surface, as corresponds to its intercalation below the graphene overlayer. Finally, the diffusion process of Li out of the graphene islands has been monitored by photoelectron microscopy using a visible-light laser.
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Submitted 23 December, 2021;
originally announced December 2021.
Large spin-mixing conductance in highly Bi-doped Cu thin films
Authors:
Sandra Ruiz-Gómez,
Aída Serrano,
Rubén Guerrero,
Manuel Muñoz,
Irene Lucas,
Michael Foerster,
Lucia Aballe,
José F. Marco,
Mario Amado,
Lauren McKenzie-Sell,
Angelo di Bernardo,
Jason W. A. Robinson,
Miguel Angel González-Barrio,
Arantzazu Mascaraque,
Lucas Pérez
Abstract:
Spin Hall effect provides an efficient tool for the conversion of a charge current into a spin current, opening the possibility of producing pure spin currents in non-magnetic materials for the next generation of spintronics devices. In this sense, giant Spin Hall Effect has been recently reported in Cu doped with 0.5 % Bi grown by sputtering and larger values are expected for larger Bi doping, ac…
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Spin Hall effect provides an efficient tool for the conversion of a charge current into a spin current, opening the possibility of producing pure spin currents in non-magnetic materials for the next generation of spintronics devices. In this sense, giant Spin Hall Effect has been recently reported in Cu doped with 0.5 % Bi grown by sputtering and larger values are expected for larger Bi doping, according to first principles calculations. In this work we demonstrate the possibility of doping Cu with up to 10 % of Bi atoms without evidences of Bi surface segregation or cluster formation, as studied by different microscopic and spectroscopic techniques. In addition, YIG/BiCu structures have been grown, showing a spin mixing conductance larger that the one shown by similar Pt/YIG structures. These results reflects the potentiality of these new materials in spintronics devices.
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Submitted 24 July, 2018; v1 submitted 4 June, 2018;
originally announced June 2018.
