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The Moon as a possible source for Earth's co-orbital bodies
Authors:
R. Sfair,
L. C. Gomes,
O. C. Winter,
R. A. Moraes,
G. Borderes-Motta,
C. M. Schäfer
Abstract:
There is a growing number of Earth's co-orbital bodies being discovered. At least five of them are known to be temporarily in quasi-satellite orbits. One of those, 469219 Kamo'oalewa, was identified as possibly having the same composition as the Moon. We explore the conditions necessary for lunar ejecta to evolve into Earth's co-orbital bodies, with particular attention to quasi-satellite orbits.…
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There is a growing number of Earth's co-orbital bodies being discovered. At least five of them are known to be temporarily in quasi-satellite orbits. One of those, 469219 Kamo'oalewa, was identified as possibly having the same composition as the Moon. We explore the conditions necessary for lunar ejecta to evolve into Earth's co-orbital bodies, with particular attention to quasi-satellite orbits. We investigate the parameter space of ejection velocity and geographic launch location across the lunar surface. The study employs numerical simulations of the four-body problem (Sun-Earth-Moon-particle) with automated classification for co-orbital states. Particles are ejected from randomly distributed points covering the lunar surface with velocities from 1.0 to 2.6 times the Moon's escape velocity. Trajectories co-orbital to Earth are found to be common, with approximately 6.68% of particles evolving into Earth co-orbital motion and 1.92% exhibiting quasi-satellite behavior. We identify an optimal ejection velocity (1.2v$_{esc}$) for quasi-satellite production, yielding over 6% conversion efficiency. Successful ejections show a strong preference for the equatorial regions of the trailing hemisphere. Collisions with Earth or Moon occur for only 4% of the sample. Extended integrations reveal long-lived configurations, including tadpole orbits persisting for 10,000 years and horseshoe co-orbitals maintaining stability for 5,000 years. Our results strengthen the plausibility of lunar origin for Earth's co-orbital bodies, including quasi-satellites like Kamo'oalewa and 2024PT5. We identify both "prompt" and "delayed" co-orbital formation mechanisms, with a steady-state production regime that could explain the presence of lunar-derived objects in Earth's co-orbital regions despite infrequent major lunar impacts.
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Submitted 13 May, 2025;
originally announced May 2025.
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Predicting BN analogue of 8-16-4 graphyne: \textit{In silico} insights into its structural, electronic, optical, and thermal transport properties
Authors:
Isaac M. Félix,
Jessé M. Pontes,
Djardiel S. Gomes,
Thiago B. G. Guerra,
Sérgio A. F. Azevedo,
Leonardo D. Machado,
Lídia C. Gomes,
Raphael M. Tromer
Abstract:
The boron nitride (BN) analogue of 8-16-4 graphyne, termed SBNyne, is proposed for the first time. Its physical properties were explored using first-principles calculations and classical molecular dynamics (MD) simulations. Thermal stability assessments reveal that SBNyne maintains structural integrity up to 1000 K. We found that SBNyne exhibits a wide indirect bandgap of 4.58 eV using HSE06 and 3…
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The boron nitride (BN) analogue of 8-16-4 graphyne, termed SBNyne, is proposed for the first time. Its physical properties were explored using first-principles calculations and classical molecular dynamics (MD) simulations. Thermal stability assessments reveal that SBNyne maintains structural integrity up to 1000 K. We found that SBNyne exhibits a wide indirect bandgap of 4.58 eV using HSE06 and 3.20 eV using PBE. It displays strong optical absorption in the ultraviolet region while remaining transparent in the infrared and visible regions. Additionally, SBNyne exhibits significantly lower thermal conductivity compared to h-BN. Phonon spectrum analysis indicates that out-of-plane phonons predominantly contribute to the vibrational density of states only at very low frequencies, explaining its low thermal conductivity. These findings expand the knowledge of BN-based 2D materials and open new avenues for their design and advanced technological applications.
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Submitted 2 July, 2024; v1 submitted 19 June, 2024;
originally announced June 2024.
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Origin of ultra-low thermal conductivity in unconventional clathrates: Strong scattering from extremely low-frequency rattling modes
Authors:
Kamil M. Ciesielski,
Brenden R. Ortiz,
Lidia C. Gomes,
Vanessa Meschke,
Jesse M. Adamczyk,
Tara L. Braden,
Dariusz Kaczorowski,
Elif Ertekin,
Eric S. Toberer
Abstract:
Recent discoveries of materials with ultra-low thermal conductivity open a pathway to significant developments in the field of thermoelectricity. Here, we conduct a comparative study of three chemically similar antimonides to establish the root causes of their extraordinarily low thermal conductivity ($0.4-0.6$ Wm$^{-1}$K$^{-1}$ at 525 K). The materials of interest are: the unconventional type-XI…
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Recent discoveries of materials with ultra-low thermal conductivity open a pathway to significant developments in the field of thermoelectricity. Here, we conduct a comparative study of three chemically similar antimonides to establish the root causes of their extraordinarily low thermal conductivity ($0.4-0.6$ Wm$^{-1}$K$^{-1}$ at 525 K). The materials of interest are: the unconventional type-XI clathrate K$_{58}$Zn$_{122}$Sb$_{207}$, the tunnel compound K$_{6.9}$Zn$_{21}$Sb$_{16}$, and the type-I clathrate K$_8$Zn$_{15.5}$Cu$_{2.5}$Sb$_{28}$ discovered herein. Calculations of the phonon dispersions show that the type-XI compound exhibits localized (i.e., rattling) phonon modes with unusually low frequencies that span the entire acoustic regime. In contrast, rattling in the type-I clathrate is observed only at higher frequencies, and no rattling modes are present in the tunnel structure. Modeling reveals that low-frequency rattling modes profoundly limit the acoustic scattering time; the scattering time of the type-XI clathrate is half that of the type-I clathrate and a quarter of the tunnel compound. For all three materials, the thermal conductivities are additionally suppressed by soft framework bonding that lowers the acoustic group velocities, and structural complexity that leads to diffusonic character of the optical modes. Understanding details of thermal transport in structurally complex materials will be crucial for developing the next generation of thermoelectrics.
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Submitted 25 January, 2023;
originally announced January 2023.
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Virtual Reality Applications in Software Engineering Education: A Systematic Review
Authors:
Gustavo Vargas de Andrade,
André Luiz Cordeiro Gomes,
Felipe Rohr Hoinoski,
Marília Guterres Ferreira,
Pablo Schoeffel,
Adilson Vahldick
Abstract:
Requirement Engineering (RE) is a Software Engineering (SE) process of defining, documenting, and maintaining the requirements from a problem. It is one of the most complex processes of SE because it addresses the relation between customer and developer. RE learning may be abstract and complex for most students because many of them cannot visualize the subject directly applied. Through the advance…
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Requirement Engineering (RE) is a Software Engineering (SE) process of defining, documenting, and maintaining the requirements from a problem. It is one of the most complex processes of SE because it addresses the relation between customer and developer. RE learning may be abstract and complex for most students because many of them cannot visualize the subject directly applied. Through the advancement of technology, Virtual Reality (VR) hardware is becoming increasingly more accessible, and it is not rare to use it in education. Little research and systematic studies explain the integration between SE and VR, and even less between RE and VR. Hence, this systematic review proposes to select and present studies that relate the use of VR applications to teach SE and RE concepts. We selected nine studies to include in this review. Despite the lack of articles addressing the topic, the results from this study showed that the use of VR technologies for learning SE is still very seminal. The projects based essentially on visualization. There are lack of tasks to build modeling artifacts, and also interaction with stakeholders and other software engineers. Learning tasks and the monitoring of students' progress by teachers also need to be considered.
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Submitted 25 April, 2022;
originally announced April 2022.
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Understanding Cu Incorporation in the $\mathrm{Cu_{2x}Hg_{2-x}GeTe_4}$ Structure using Resonant X-ray Diffraction
Authors:
Ben L. Levy-Wendt,
Brenden R. Ortiz,
Lìdia C. Gomes,
Kevin H. Stone,
Donata Passarello,
Elif Ertekin,
Eric S. Toberer,
Michael F. Toney
Abstract:
The ability to control carrier concentration based on the extent of Cu solubility in the $\mathrm{Cu_{2x}Hg_{2-x}GeTe_4}$ alloy compound (where 0 $\leq$ x $\leq$ 1) makes $\mathrm{Cu_{2x}Hg_{2-x}GeTe_4}$ an interesting case study in the field of thermoelectrics. While Cu clearly plays a role in this process, it is unknown exactly how Cu incorporates into the $\mathrm{Cu_{2x}Hg_{2-x}GeTe_4}$ crysta…
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The ability to control carrier concentration based on the extent of Cu solubility in the $\mathrm{Cu_{2x}Hg_{2-x}GeTe_4}$ alloy compound (where 0 $\leq$ x $\leq$ 1) makes $\mathrm{Cu_{2x}Hg_{2-x}GeTe_4}$ an interesting case study in the field of thermoelectrics. While Cu clearly plays a role in this process, it is unknown exactly how Cu incorporates into the $\mathrm{Cu_{2x}Hg_{2-x}GeTe_4}$ crystal structure and how this affects the carrier concentration. In this work, we use a combination of resonant energy X-ray diffraction (REXD) experiments and density functional theory (DFT) calculations to elucidate the nature of Cu incorporation into the $\mathrm{Cu_{2x}Hg_{2-x}GeTe_4}$ structure. REXD across the $\mathrm{Cu_k}$ edge facilitates the characterization of Cu incorporation in the $\mathrm{Cu_{2x}Hg_{2-x}GeTe_4}$ alloy and enables direct quantification of anti-site defects. We find that Cu substitutes for Hg at a 2:1 ratio, wherein Cu annihilates a vacancy and swaps with a Hg atom. DFT calculations confirm this result and further reveal that the incorporation of Cu occurs preferentially on one of the z = 1/4 or z = 3/4 planes before filling the other plane. Furthermore, the amount of $\mathrm{Cu_{Hg}}$ anti-site defects quantified by REXD was found to be directly proportional to the experimentally measured hole concentration, indicating that the $\mathrm{Cu_{Hg}}$ defects are the driving force for tuning carrier concentration in the $\mathrm{Cu_{2x}Hg_{2-x}GeTe_4}$ alloy. The link uncovered here between crystal structure, or more specifically anti-site defects, and carrier concentration can be extended to similar cation-disordered material systems and will aid the development of improved thermoelectric and other functional materials through defect engineering.
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Submitted 9 October, 2020;
originally announced October 2020.
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Electric Field-Tuned Topological Phase Transition in Ultra-Thin Na3Bi - Towards a Topological Transistor
Authors:
James L. Collins,
Anton Tadich,
Weikang Wu,
Lidia C. Gomes,
Joao N. B. Rodrigues,
Chang Liu,
Jack Hellerstedt,
Hyejin Ryu,
Shujie Tang,
Sung-Kwan Mo,
Shaffique Adam,
Shengyuan A. Yang,
Michael. S. Fuhrer,
Mark T. Edmonds
Abstract:
The electric field induced quantum phase transition from topological to conventional insulator has been proposed as the basis of a topological field effect transistor [1-4]. In this scheme an electric field can switch 'on' the ballistic flow of charge and spin along dissipationless edges of the two-dimensional (2D) quantum spin Hall insulator [5-9], and when 'off' is a conventional insulator with…
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The electric field induced quantum phase transition from topological to conventional insulator has been proposed as the basis of a topological field effect transistor [1-4]. In this scheme an electric field can switch 'on' the ballistic flow of charge and spin along dissipationless edges of the two-dimensional (2D) quantum spin Hall insulator [5-9], and when 'off' is a conventional insulator with no conductive channels. Such as topological transistor is promising for low-energy logic circuits [4], which would necessitate electric field-switched materials with conventional and topological bandgaps much greater than room temperature, significantly greater than proposed to date [6-8]. Topological Dirac semimetals(TDS) are promising systems in which to look for topological field-effect switching, as they lie at the boundary between conventional and topological phases [3,10-16]. Here we use scanning probe microscopy/spectroscopy (STM/STS) and angle-resolved photoelectron spectroscopy (ARPES) to show that mono- and bilayer films of TDS Na3Bi [3,17] are 2D topological insulators with bulk bandgaps >400 meV in the absence of electric field. Upon application of electric field by doping with potassium or by close approach of the STM tip, the bandgap can be completely closed then re-opened with conventional gap greater than 100 meV. The large bandgaps in both the conventional and quantum spin Hall phases, much greater than the thermal energy kT = 25 meV at room temperature, suggest that ultrathin Na3Bi is suitable for room temperature topological transistor operation.
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Submitted 4 February, 2019; v1 submitted 21 May, 2018;
originally announced May 2018.
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Spatial Charge Inhomogeneity and Defect States in Topological Dirac Semimetal Thin Films
Authors:
Mark T. Edmonds,
James L. Collins,
Jack Hellerstedt,
Indra Yudhistira,
Lídia C. Gomes,
João N. B. Rodrigues,
Shaffique Adam,
Michael S. Fuhrer
Abstract:
The close approach of the Fermi energy EF of a Dirac semimetal to the Dirac point ED uncovers new physics such as velocity renormalization,1,2,3 and the Dirac plasma 4,5 at |EF -ED| < kBT, where kBT is the thermal energy. In graphene, substrate disorder drives fluctuations in EF. Three-dimensional topological Dirac semimetals (TDS)6,7 obviate the substrate, and should show reduced EF fluctuations…
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The close approach of the Fermi energy EF of a Dirac semimetal to the Dirac point ED uncovers new physics such as velocity renormalization,1,2,3 and the Dirac plasma 4,5 at |EF -ED| < kBT, where kBT is the thermal energy. In graphene, substrate disorder drives fluctuations in EF. Three-dimensional topological Dirac semimetals (TDS)6,7 obviate the substrate, and should show reduced EF fluctuations due to better metallic screening and higher dielectric constants. Here we map the potential fluctuations in TDS Na3Bi using a scanning tunneling microscope. The rms potential fluctuations are significantly smaller than room temperature (ΔEF,rms = 4-6 meV = 40-70 K) and comparable to the highest quality graphene on h-BN;8 far smaller than graphene on SiO2,9,10 or the Dirac surface state of a topological insulator.11 Surface Na vacancies produce a novel resonance close to the Dirac point with surprisingly large spatial extent and provides a unique way to tune the surface density of states in a TDS thin-film material.
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Submitted 11 December, 2016;
originally announced December 2016.
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Strongly bound Mott-Wannier Excitons in GeS and GeSe monolayers
Authors:
Lidia C. Gomes,
P. E. Trevisanutto,
A. Carvalho,
A. S. Rodin,
A. H. Castro Neto
Abstract:
The excitonic spectra of single layer GeS and GeSe are predicted by ab initio GW-Bethe Salpeter equation calculations. G 0 W 0 calculations for the band structures find a fundamental band gap of 2.85 eV for GeS and 1.70 eV for GeSe monolayer. However, excitons are tightly bound, specially in GeS at the Γ point, where the quasi-particle interactions are so strong that they shift the Γ exciton peak…
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The excitonic spectra of single layer GeS and GeSe are predicted by ab initio GW-Bethe Salpeter equation calculations. G 0 W 0 calculations for the band structures find a fundamental band gap of 2.85 eV for GeS and 1.70 eV for GeSe monolayer. However, excitons are tightly bound, specially in GeS at the Γ point, where the quasi-particle interactions are so strong that they shift the Γ exciton peak energy into the visible range and below the off-Γ exciton peak. The lowest energy excitons in both materials are excited by light along the zigzag direction and have exciton binding energies of 1.05 eV and 0.4 eV, respectively, but despite the strong binding, the calculated binding energies are in agreement with a Mott-Wannier model.
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Submitted 26 July, 2016;
originally announced July 2016.
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Vacancies and oxidation of 2D group-IV monochalcogenides
Authors:
Lídia C. Gomes,
A. Carvalho,
A. H. Castro Neto
Abstract:
Point defects in the binary group-IV monochalcogenide monolayers of SnS, SnSe, GeS, GeSe are investigated using density-functional-theory calculations. Several stable configurations are found for oxygen defects, however we give evidence that these materials are less prone to oxidation than phosphorene, with which monochalcogenides are isoelectronic and share the same orthorhombic structure. Concur…
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Point defects in the binary group-IV monochalcogenide monolayers of SnS, SnSe, GeS, GeSe are investigated using density-functional-theory calculations. Several stable configurations are found for oxygen defects, however we give evidence that these materials are less prone to oxidation than phosphorene, with which monochalcogenides are isoelectronic and share the same orthorhombic structure. Concurrent oxygen defects are expected to be vacancies and substitutional oxygen. We show that it is energetically favorable oxygen be incorporated into the layers substituting for a chalcogen (O S/Se defects), and different from most of the other defects investigated, this defect preserves the electronic structure of the material. Thus, we suggest that annealing treatments can be useful for the treatment of functional materials where loss mechanisms due to the presence of defects are undesirable.
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Submitted 14 April, 2016;
originally announced April 2016.
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Enhanced piezoelectricity and modified dielectric screening of 2-D group-IV monochalcogenides
Authors:
Lídia C. Gomes,
A. Carvalho,
A. H. Castro Neto
Abstract:
We use first principles calculations to investigate the lattice properties of group-IV monochalcogenides. These include static dielectric permittivity, elastic and piezoelectric tensors. For the monolayer, it is found that the static permittivity, besides acquiring a dependence on the interlayer distance, is comparatively higher than in the 3D system. In contrast, it is found that elastic properti…
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We use first principles calculations to investigate the lattice properties of group-IV monochalcogenides. These include static dielectric permittivity, elastic and piezoelectric tensors. For the monolayer, it is found that the static permittivity, besides acquiring a dependence on the interlayer distance, is comparatively higher than in the 3D system. In contrast, it is found that elastic properties are little changed by the lower dimensionality. Poisson ratio relating in-plane deformations are close to zero, and the existence of a negative Poisson ratio is also predicted for the GeS compound. Finally, the monolayers shows piezoelectricity, with piezoelectric constants higher than that recently predicted to occur in other 2D-systems, as hexagonal BN and transition metal dichalcogenide monolayers.
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Submitted 5 November, 2015;
originally announced November 2015.
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Valleytronics in Tin (II) Sulfide
Authors:
A. S. Rodin,
L. C. Gomes,
A. Carvalho,
A. H. Castro Neto
Abstract:
Tin (II) sulfide (SnS) is a layered mineral found in nature. In this paper, we study the two-dimensional form of this material using a combination of \emph{ab initio} calculation and $\mathbf{k}\cdot\mathbf{p}$ theory. In particular, we address the valley properties and the optical selection rules of 2D SnS. Our study reveals SnS as an extraordinary material for valleytronics, where pairs of equiv…
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Tin (II) sulfide (SnS) is a layered mineral found in nature. In this paper, we study the two-dimensional form of this material using a combination of \emph{ab initio} calculation and $\mathbf{k}\cdot\mathbf{p}$ theory. In particular, we address the valley properties and the optical selection rules of 2D SnS. Our study reveals SnS as an extraordinary material for valleytronics, where pairs of equivalent valleys are placed along two perpendicular axes, can be selected exclusively with linear polarized light, and can be separated using non-local electrical measurements.
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Submitted 31 August, 2015;
originally announced August 2015.
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Phosphorene analogues: isoelectronic two-dimensional group-IV monochalcogenides with orthorhombic structure
Authors:
Lidia C. Gomes,
A. Carvalho
Abstract:
The group-IV monochalcogenides SnS, GeS, SnSe and GeSe form a family within the wider group of semiconductor `phosphorene analogues'. Here, we used first principles calculations to investigate systematically their structural, electronic and optical properties, analysing the changes associated with the reduction of dimensionality, from bulk to monolayer or bilayer form. We show that all those binar…
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The group-IV monochalcogenides SnS, GeS, SnSe and GeSe form a family within the wider group of semiconductor `phosphorene analogues'. Here, we used first principles calculations to investigate systematically their structural, electronic and optical properties, analysing the changes associated with the reduction of dimensionality, from bulk to monolayer or bilayer form. We show that all those binary phosphorene analogues are semiconducting, with bandgap energies covering part of the infra-red and visible range, and in most cases higher than phosphorene. Further, we found that they have multiple valleys in the valence and conduction band, with spin-orbit splitting of the order of 19-86 meV.
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Submitted 23 June, 2015; v1 submitted 21 April, 2015;
originally announced April 2015.
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Stability of extended defects on boron nitride and graphene monolayers: the role of chemical environment
Authors:
L. C. Gomes,
S. S. Alexandre,
H. Chacham,
R. W. Nunes
Abstract:
We perform ab initio calculations that indicate that the relative stability of antiphase boundaries (APB) with armchair and zigzag chiralities in monolayer boron nitride (BN) is determined by the chemical potentials of the boron and nitrogen species in the synthesis process. In an N-rich environment, a zigzag APB with N-rich core is the most stable structure, while under B-rich or intrinsic growth…
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We perform ab initio calculations that indicate that the relative stability of antiphase boundaries (APB) with armchair and zigzag chiralities in monolayer boron nitride (BN) is determined by the chemical potentials of the boron and nitrogen species in the synthesis process. In an N-rich environment, a zigzag APB with N-rich core is the most stable structure, while under B-rich or intrinsic growth conditions, an armchair APB with stoichiometric core is the most stable. This stability transition is shown to arise from a competition between homopolar-bond (B-B and N-N) and elastic energy costs in the core of the APBs. Moreover, in the presence of a carbon source we find that a carbon-doped zigzag APB becomes the most stable boundary near the N-rich limit. The electronic structure of the two types of APBs in BN is shown to be particularly distinct, with the zigzag APB depicting defect-like deep electronic bands in the band gap, while the armchair APB shows bulk-like shallow electronic bands.
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Submitted 21 December, 2012; v1 submitted 30 November, 2012;
originally announced November 2012.
