Showing 1–50 of 119 results for author: Goldhaber-Gordon, D

Size-restricted magnetotransport in the delafossite metals PdCoO$_2$ and PtCoO$_2$

Authors: Michal Moravec, Graham Baker, Maja D. Bachmann, Aaron L. Sharpe, Nabhanila Nandi, Arthur W. Barnard, Carsten Putzke, Seunghyun Khim, Markus König, David Goldhaber-Gordon, Philip J. W. Moll, Andrew P. Mackenzie

Abstract: Studies of electronic transport in width-restricted channels of PdCoO$_2$ have recently revealed a novel `directional ballistic' regime, in which ballistic propagation of electrons on an anisotropic Fermi surface breaks the symmetries of bulk transport. Here we introduce a magnetic field to this regime, in channels of PdCoO$_2$ and PtCoO$_2$ along two crystallographically distinct directions and o… ▽ More Studies of electronic transport in width-restricted channels of PdCoO$_2$ have recently revealed a novel `directional ballistic' regime, in which ballistic propagation of electrons on an anisotropic Fermi surface breaks the symmetries of bulk transport. Here we introduce a magnetic field to this regime, in channels of PdCoO$_2$ and PtCoO$_2$ along two crystallographically distinct directions and over a wide range of widths. We observe magnetoresistance distinct from that in the bulk, with features strongly dependent on channel orientation and becoming more pronounced the narrower the channel. Comparison to semi-classical theory establishes that magnetoresistance arises from field-induced modification of boundary scattering, and helps connect features in the data with specific electronic trajectories. However, the role of bulk scattering in our measurements is yet to be fully understood. Our results demonstrate that finite-size magnetotransport is sensitive to the anisotropy of Fermi surface properties, motivating future work to fully understand and exploit this sensitivity. △ Less

Submitted 27 March, 2025; originally announced March 2025.

Extended Fractional Chern Insulators Near Half Flux in Twisted Bilayer Graphene Above the Magic Angle

Authors: Joe Finney, Aaron L. Sharpe, Linsey K. Rodenbach, Jian Kang, Xiaoyu Wang, Kenji Watanabe, Takashi Taniguchi, Marc A. Kastner, Oskar Vafek, David Goldhaber-Gordon

Abstract: Fractional Chern insulators (FCIs) -- the lattice analog of the fractional quantum Hall states -- form as fractionalized quasiparticles emerge in a partially-filled Chern band. This fractionalization is driven by an interplay of electronic interaction and quantum geometry of the underlying wavefunctions. Bilayer graphene with an interlayer twist near the magic angle of 1.1° hosts diverse correlate… ▽ More Fractional Chern insulators (FCIs) -- the lattice analog of the fractional quantum Hall states -- form as fractionalized quasiparticles emerge in a partially-filled Chern band. This fractionalization is driven by an interplay of electronic interaction and quantum geometry of the underlying wavefunctions. Bilayer graphene with an interlayer twist near the magic angle of 1.1° hosts diverse correlated electronic states at zero magnetic field. When the twist angle exceeds 1.3°, the electronic bandwidth is sufficient to suppress the zero-field correlated states. Yet applying a magnetic field can restore the importance of electron-electron interactions. Here, we report strongly-correlated phases when a 1.37° twisted bilayer graphene sample is tuned to near half a magnetic flux quantum per moiré cell, deep into the Hofstadter regime. Most notably, well-quantized odd-denominator FCI states appear in multiple Hofstadter subbands, over unusually large ranges of density. This suggests a mechanism beyond disorder is stabilizing the fractional states. We also observe a bending and resetting of the Landau minifan reminiscent of the cascade of Dirac resets observed in magic-angle samples near integer filling at zero field. △ Less

Submitted 22 March, 2025; v1 submitted 17 March, 2025; originally announced March 2025.

Comments: 37 pages, 31 figures

Quantitative determination of twist angle and strain in Van der Waals moiré superlattices

Authors: Steven J. Tran, Jan-Lucas Uslu, Mihir Pendharkar, Joe Finney, Aaron L. Sharpe, Marisa Hocking, Nathan J. Bittner, Kenji Watanabe, Takashi Taniguchi, Marc A. Kastner, Andrew J. Mannix, David Goldhaber-Gordon

Abstract: Scanning probe techniques are popular, non-destructive ways to visualize the real space structure of Van der Waals moirés. The high lateral spatial resolution provided by these techniques enables extracting the moiré lattice vectors from a scanning probe image. We have found that the extracted values, while precise, are not necessarily accurate. Scan-to-scan variations in the behavior of the piezo… ▽ More Scanning probe techniques are popular, non-destructive ways to visualize the real space structure of Van der Waals moirés. The high lateral spatial resolution provided by these techniques enables extracting the moiré lattice vectors from a scanning probe image. We have found that the extracted values, while precise, are not necessarily accurate. Scan-to-scan variations in the behavior of the piezos which drive the scanning probe, and thermally-driven slow relative drift between probe and sample, produce systematic errors in the extraction of lattice vectors. In this Letter, we identify the errors and provide a protocol to correct for them. Applying this protocol to an ensemble of ten successive scans of near-magic-angle twisted bilayer graphene, we are able to reduce our errors in extracting lattice vectors to less than 1%. This translates to extracting twist angles with a statistical uncertainty less than 0.001° and uniaxial heterostrain with uncertainty on the order of 0.002%. △ Less

Submitted 12 June, 2024; originally announced June 2024.

Comments: 20 pages including supplementary material and 3 main figures

Deterministic fabrication of graphene hexagonal boron nitride moiré superlattices

Authors: Rupini V. Kamat, Aaron L. Sharpe, Mihir Pendharkar, Jenny Hu, Steven J. Tran, Gregory Zaborski Jr., Marisa Hocking, Joe Finney, Kenji Watanabe, Takashi Taniguchi, Marc A. Kastner, Andrew J. Mannix, Tony Heinz, David Goldhaber-Gordon

Abstract: The electronic properties of moiré heterostructures depend sensitively on the relative orientation between layers of the stack. For example, near-magic-angle twisted bilayer graphene (TBG) commonly shows superconductivity, yet a TBG sample with one of the graphene layers rotationally aligned to a hexagonal Boron Nitride (hBN) cladding layer provided the first experimental observation of orbital fe… ▽ More The electronic properties of moiré heterostructures depend sensitively on the relative orientation between layers of the stack. For example, near-magic-angle twisted bilayer graphene (TBG) commonly shows superconductivity, yet a TBG sample with one of the graphene layers rotationally aligned to a hexagonal Boron Nitride (hBN) cladding layer provided the first experimental observation of orbital ferromagnetism. To create samples with aligned graphene/hBN, researchers often align edges of exfoliated flakes that appear straight in optical micrographs. However, graphene or hBN can cleave along either zig-zag or armchair lattice directions, introducing a 30 degree ambiguity in the relative orientation of two flakes. By characterizing the crystal lattice orientation of exfoliated flakes prior to stacking using Raman and second-harmonic generation for graphene and hBN, respectively, we unambiguously align monolayer graphene to hBN at a near-0 degree, not 30 degree, relative twist angle. We confirm this alignment by torsional force microscopy (TFM) of the graphene/hBN moiré on an open-face stack, and then by cryogenic transport measurements, after full encapsulation with a second, non-aligned hBN layer. This work demonstrates a key step toward systematically exploring the effects of the relative twist angle between dissimilar materials within moiré heterostructures. △ Less

Submitted 28 May, 2024; originally announced May 2024.

Comments: 40 pages, 15 figures

Automated Tabletop Exfoliation and Identification of Monolayer Graphene Flakes

Authors: Elijah D. S. Courtney, Mihir Pendharkar, Nathan J. Bittner, Aaron L. Sharpe, David Goldhaber-Gordon

Abstract: Over the past two decades, graphene has been intensively studied because of its remarkable mechanical, optical, and electronic properties. Initial studies were enabled by manual ``Scotch Tape'' exfoliation; nearly two decades later, this method is still widely used to obtain chemically-pristine flakes of graphene and other 2D van der Waals materials. Unfortunately, the yield of large, pristine fla… ▽ More Over the past two decades, graphene has been intensively studied because of its remarkable mechanical, optical, and electronic properties. Initial studies were enabled by manual ``Scotch Tape'' exfoliation; nearly two decades later, this method is still widely used to obtain chemically-pristine flakes of graphene and other 2D van der Waals materials. Unfortunately, the yield of large, pristine flakes with uniform thickness is inconsistent. Thus, significant time and effort are required to exfoliate and locate flakes suitable for fabricating multilayer van der Waals heterostructures. Here, we describe a relatively affordable tabletop device (the ``eXfoliator'') that can reproducibly control key parameters and largely automate the exfoliation process. In a typical exfoliation run, the eXfoliator produces 3 or more large ($\ge400\ μ$m$^2$) high-quality graphene monolayer flakes, allowing new users to produce such flakes at a rate comparable to manual exfoliation by an experienced user. We use an automated mapping system and a computer vision algorithm to locate candidate flakes. Our results provide a starting point for future research efforts to more precisely identify which parameters matter for the success of exfoliation, and to optimize them. △ Less

Submitted 30 December, 2024; v1 submitted 19 March, 2024; originally announced March 2024.

Comments: 11 pages, 10 figures, 12 tables

Thermal relaxation of strain and twist in ferroelectric hexagonal boron nitride moiré interfaces

Authors: Marisa Hocking, Christina E. Henzinger, Steven Tran, Mihir Pendharkar, Nathan J. Bittner, Kenji Watanabe, Takashi Taniguchi, David Goldhaber-Gordon, Andrew J. Mannix

Abstract: New properties can arise at van der Waals (vdW) interfaces hosting a moiré pattern generated by interlayer twist and strain. However, achieving precise control of interlayer twist/strain remains an ongoing challenge in vdW heterostructure assembly, and even subtle variation in these structural parameters can create significant changes in the moiré period and emergent properties. Characterizing the… ▽ More New properties can arise at van der Waals (vdW) interfaces hosting a moiré pattern generated by interlayer twist and strain. However, achieving precise control of interlayer twist/strain remains an ongoing challenge in vdW heterostructure assembly, and even subtle variation in these structural parameters can create significant changes in the moiré period and emergent properties. Characterizing the rate of interlayer twist/strain relaxation during thermal annealing is critical to establish a thermal budget for vdW heterostructure construction and may provide a route to improve the homogeneity of the interface or to control its final state. Here, we characterize the spatial and temporal dependence of interfacial twist and strain relaxation in marginally-twisted hBN/hBN interfaces heated under conditions relevant to vdW heterostructure assembly and typical sample annealing. We find that the ferroelectric hBN/hBN moiré relaxes minimally during annealing in air at typical assembly temperatures of 170°C. However, at 400°C, twist angle relaxes significantly, accompanied by a decrease in spatial uniformity. Uniaxial heterostrain initially increases and then decreases over time, becoming increasingly non-uniform in direction. Structural irregularities such as step edges, contamination bubbles, or contact with the underlying substrate result in local inhomogeneity in the rate of relaxation. △ Less

Submitted 14 March, 2024; originally announced March 2024.

Chemically Tailored Growth of 2D Semiconductors via Hybrid Metal-Organic Chemical Vapor Deposition

Authors: Zhepeng Zhang, Lauren Hoang, Marisa Hocking, Jenny Hu, Gregory Zaborski Jr., Pooja Reddy, Johnny Dollard, David Goldhaber-Gordon, Tony F. Heinz, Eric Pop, Andrew J. Mannix

Abstract: Two-dimensional (2D) semiconducting transition-metal dichalcogenides (TMDCs) are an exciting platform for new excitonic physics and next-generation electronics, creating a strong demand to understand their growth, doping, and heterostructures. Despite significant progress in solid-source (SS-) and metal-organic chemical vapor deposition (MOCVD), further optimization is necessary to grow highly cry… ▽ More Two-dimensional (2D) semiconducting transition-metal dichalcogenides (TMDCs) are an exciting platform for new excitonic physics and next-generation electronics, creating a strong demand to understand their growth, doping, and heterostructures. Despite significant progress in solid-source (SS-) and metal-organic chemical vapor deposition (MOCVD), further optimization is necessary to grow highly crystalline 2D TMDCs with controlled doping. Here, we report a hybrid MOCVD growth method that combines liquid-phase metal precursor deposition and vapor-phase organo-chalcogen delivery to leverage the advantages of both MOCVD and SS-CVD. Using our hybrid approach, we demonstrate WS$_2$ growth with tunable morphologies - from separated single-crystal domains to continuous monolayer films - on a variety of substrates, including sapphire, SiO$_2$, and Au. These WS$_2$ films exhibit narrow neutral exciton photoluminescence linewidths down to 33 meV and room-temperature mobility up to 34 - 36 cm$^2$V$^-$$^1$s$^-$$^1$). Through simple modifications to the liquid precursor composition, we demonstrate the growth of V-doped WS$_2$, MoxW$_1$$_-$$_x$S$_2$ alloys, and in-plane WS$_2$-MoS$_2$ heterostructures. This work presents an efficient approach for addressing a variety of TMDC synthesis needs on a laboratory scale. △ Less

Submitted 6 March, 2024; originally announced March 2024.

Helical trilayer graphene: a moiré platform for strongly-interacting topological bands

Authors: Li-Qiao Xia, Sergio C. de la Barrera, Aviram Uri, Aaron Sharpe, Yves H. Kwan, Ziyan Zhu, Kenji Watanabe, Takashi Taniguchi, David Goldhaber-Gordon, Liang Fu, Trithep Devakul, Pablo Jarillo-Herrero

Abstract: Quantum geometry of electronic wavefunctions results in fascinating topological phenomena. A prominent example is the intrinsic anomalous Hall effect (AHE) in which a Hall voltage arises in the absence of an applied magnetic field. The AHE requires a coexistence of Berry curvature and spontaneous time-reversal symmetry breaking. These conditions can be realized in two-dimensional moiré systems wit… ▽ More Quantum geometry of electronic wavefunctions results in fascinating topological phenomena. A prominent example is the intrinsic anomalous Hall effect (AHE) in which a Hall voltage arises in the absence of an applied magnetic field. The AHE requires a coexistence of Berry curvature and spontaneous time-reversal symmetry breaking. These conditions can be realized in two-dimensional moiré systems with broken $xy$-inversion symmetry ($C_{2z}$) that host flat electronic bands. Here, we explore helical trilayer graphene (HTG), three graphene layers twisted sequentially by the same angle forming two misoriented moiré patterns. Although HTG is globally $C_{2z}$-symmetric, surprisingly we observe clear signatures of topological bands. At a magic angle $θ_\mathrm{m}\approx 1.8^\circ$, we uncover a robust phase diagram of correlated and magnetic states using magnetotransport measurements. Lattice relaxation leads to large periodic domains in which $C_{2z}$ is broken on the moiré scale. Each domain harbors flat topological bands with valley-contrasting Chern numbers $\pm(1,-2)$. We find correlated states at integer electron fillings per moiré unit cell $ν=1,2,3$ and fractional fillings $2/3,7/2$ with the AHE arising at $ν=1,3$ and $2/3,7/2$. At $ν=1$, a time-reversal symmetric phase appears beyond a critical electric displacement field, indicating a topological phase transition. Finally, hysteresis upon sweeping $ν$ points to first-order phase transitions across a spatial mosaic of Chern domains separated by a network of topological gapless edge states. We establish HTG as an important platform that realizes ideal conditions for exploring strongly interacting topological phases and, due to its emergent moiré-scale symmetries, demonstrates a novel way to engineer topology. △ Less

Submitted 18 October, 2023; originally announced October 2023.

Journal ref: Nature Physics (2025): 1-6

Torsional Force Microscopy of Van der Waals Moirés and Atomic Lattices

Authors: Mihir Pendharkar, Steven J. Tran, Gregory Zaborski Jr., Joe Finney, Aaron L. Sharpe, Rupini V. Kamat, Sandesh S. Kalantre, Marisa Hocking, Nathan J. Bittner, Kenji Watanabe, Takashi Taniguchi, Bede Pittenger, Christina J. Newcomb, Marc A. Kastner, Andrew J. Mannix, David Goldhaber-Gordon

Abstract: In a stack of atomically-thin Van der Waals layers, introducing interlayer twist creates a moiré superlattice whose period is a function of twist angle. Changes in that twist angle of even hundredths of a degree can dramatically transform the system's electronic properties. Setting a precise and uniform twist angle for a stack remains difficult, hence determining that twist angle and mapping its s… ▽ More In a stack of atomically-thin Van der Waals layers, introducing interlayer twist creates a moiré superlattice whose period is a function of twist angle. Changes in that twist angle of even hundredths of a degree can dramatically transform the system's electronic properties. Setting a precise and uniform twist angle for a stack remains difficult, hence determining that twist angle and mapping its spatial variation is very important. Techniques have emerged to do this by imaging the moiré, but most of these require sophisticated infrastructure, time-consuming sample preparation beyond stack synthesis, or both. In this work, we show that Torsional Force Microscopy (TFM), a scanning probe technique sensitive to dynamic friction, can reveal surface and shallow subsurface structure of Van der Waals stacks on multiple length scales: the moirés formed between bi-layers of graphene and between graphene and hexagonal boron nitride (hBN), and also the atomic crystal lattices of graphene and hBN. In TFM, torsional motion of an AFM cantilever is monitored as it is actively driven at a torsional resonance while a feedback loop maintains contact at a set force with the sample surface. TFM works at room temperature in air, with no need for an electrical bias between the tip and the sample, making it applicable to a wide array of samples. It should enable determination of precise structural information including twist angles and strain in moiré superlattices and crystallographic orientation of VdW flakes to support predictable moiré heterostructure fabrication. △ Less

Submitted 20 December, 2023; v1 submitted 17 August, 2023; originally announced August 2023.

Comments: 31 pages, 14 figures and 1 table including supplementary materials

Report number: 121 (10) e2314083121

Journal ref: PNAS (2024)

Universal conductance fluctuations in a MnBi$_2$Te$_4$ thin film

Authors: Molly P. Andersen, Evgeny Mikheev, Ilan T. Rosen, Lixuan Tai, Peng Zhang, Kang L. Wang, Marc A. Kastner, David Goldhaber-Gordon

Abstract: Quantum coherence of electrons can produce striking behaviors in mesoscopic conductors, including weak localization and the Aharonov-Bohm effect. Although magnetic order can also strongly affect transport, the combination of coherence and magnetic order has been largely unexplored. Here, we examine quantum coherence-driven universal conductance fluctuations in the antiferromagnetic, canted antifer… ▽ More Quantum coherence of electrons can produce striking behaviors in mesoscopic conductors, including weak localization and the Aharonov-Bohm effect. Although magnetic order can also strongly affect transport, the combination of coherence and magnetic order has been largely unexplored. Here, we examine quantum coherence-driven universal conductance fluctuations in the antiferromagnetic, canted antiferromagnetic, and ferromagnetic phases of a thin film of the topological material MnBi$_2$Te$_4$. In each magnetic phase we extract a charge carrier phase coherence length of about 100 nm. The conductance magnetofingerprint is repeatable when sweeping applied magnetic field within one magnetic phase, but changes when the applied magnetic field crosses the antiferromagnetic/canted antiferromagnetic magnetic phase boundary. Surprisingly, in the antiferromagnetic and canted antiferromagnetic phase, but not in the ferromagnetic phase, the magnetofingerprint depends on the direction of the field sweep. To explain these observations, we suggest that conductance fluctuation measurements are sensitive to the motion and nucleation of magnetic domain walls in MnBi$_2$Te$_4$. △ Less

Submitted 2 August, 2023; originally announced August 2023.

Realization of the quantum ampere using the quantum anomalous Hall and Josephson effects

Authors: Linsey K. Rodenbach, Ngoc Thanh Mai Tran, Jason M. Underwood, Alireza R. Panna, Molly P. Andersen, Zachary S. Barcikowski, Shamith U. Payagala, Peng Zhang, Lixuan Tai, Kang L. Wang, Randolph E. Elmquist, Dean G. Jarrett, David B. Newell, Albert F. Rigosi, David Goldhaber-Gordon

Abstract: By directly coupling a quantum anomalous Hall resistor to a programmable Josephson voltage standard, we have implemented a quantum current sensor (QCS) that operates within a single cryostat in zero magnetic field. Using this QCS we determine values of current within the range 9.33 nA - 252 nA, providing a realization of the ampere based on fundamental constants and quantum phenomena. The relative… ▽ More By directly coupling a quantum anomalous Hall resistor to a programmable Josephson voltage standard, we have implemented a quantum current sensor (QCS) that operates within a single cryostat in zero magnetic field. Using this QCS we determine values of current within the range 9.33 nA - 252 nA, providing a realization of the ampere based on fundamental constants and quantum phenomena. The relative Type A uncertainty is lowest, 2.30 $\times$10$^{-6}$ A/A, at the highest current studied, 252 nA. The total root-sum-square combined relative uncertainty ranges from 3.91 $\times$10$^{-6}$ A/A at 252 nA to 41.2 $\times$10$^{-6}$ A/A at 9.33 nA. No DC current standard is available in the nanoampere range with relative uncertainty comparable to this, so we assess our QCS accuracy by comparison to a traditional Ohm's law measurement of the same current source. We find closest agreement (1.46 $\pm$ 4.28)$\times$10$^{-6}$ A/A for currents near 83.9 nA, for which the highest number of measurements were made. △ Less

Submitted 31 July, 2023; originally announced August 2023.

Comments: 12 pages, 5 figures, 15 pages of supplemental information

Magnetic field stabilized Wigner crystal states in a graphene moiré superlattice

Authors: Guorui Chen, Ya-Hui Zhang, Aaron Sharpe, Zuocheng Zhang, Shaoxin Wang, Lili Jiang, Bosai Lyu, Hongyuan Li, Kenji Watanabe, Takashi Taniguchi, Zhiwen Shi, David Goldhaber-Gordon, Yuanbo Zhang, Feng Wang

Abstract: Wigner crystals are predicted as the crystallization of the dilute electron gas moving in a uniform background when the electron-electron Coulomb energy dominates the kinetic energy. The Wigner crystal has previously been observed in the ultraclean two-dimensional electron gas (2DEG) present on the surface of liquid helium and in semiconductor quantum wells at high magnetic field. More recently, W… ▽ More Wigner crystals are predicted as the crystallization of the dilute electron gas moving in a uniform background when the electron-electron Coulomb energy dominates the kinetic energy. The Wigner crystal has previously been observed in the ultraclean two-dimensional electron gas (2DEG) present on the surface of liquid helium and in semiconductor quantum wells at high magnetic field. More recently, Wigner crystals have also been reported in WS2/WSe2 moiré heterostructures. ABC-stacked trilayer graphene on boron nitride (ABC-TLG/hBN) moiré superlattices provide a unique tunable platform to explore Wigner crystal states where the electron correlation can be controlled by electric and magnetic field. Here we report the observation of magnetic field stabilized Wigner crystal states in a ABC-TLG/hBN moiré superlattice. We show that correlated insulating states emerge at multiple fractional and integer fillings corresponding to v = 1/3, 2/3, 1, 4/3, 5/3 and 2 electrons per moiré lattice site under a magnetic field. These correlated insulating states can be attributed to generalized Mott states for the integer fillings (v = 1, 2) and generalized Wigner crystal states for the fractional fillings (v = 1/3, 2/3, 4/3, 5/3). The generalized Wigner crystal states are stabilized by a vertical magnetic field, and they are strongest at one magnetic flux quantum per three moiré superlattices. The correlated insulating states at v = 2 persists up to 30 Tesla, which can be described by a Mott-Hofstadter transition at high magnetic field. The tunable Mott and Wigner crystal states in the ABC-TLG/hBN highlight the opportunities to discover new correlated quantum phases due to the interplay between the magnetic field and moiré flatbands. △ Less

Submitted 15 May, 2023; originally announced May 2023.

Comments: 19 pages, 6 figures

Visualizing the atomic-scale origin of metallic behavior in Kondo insulators

Authors: Harris Pirie, Eric Mascot, Christian E. Matt, Yu Liu, Pengcheng Chen, M. H. Hamidian, Shanta Saha, Xiangfeng Wang, Johnpierre Paglione, Graeme Luke, David Goldhaber-Gordon, Cyrus F. Hirjibehedin, J. C. Séamus Davis, Dirk K. Morr, Jennifer E. Hoffman

Abstract: A Kondo lattice is often electrically insulating at low temperatures. However, several recent experiments have detected signatures of bulk metallicity within this Kondo insulating phase. Here we visualize the real-space charge landscape within a Kondo lattice with atomic resolution using a scanning tunneling microscope. We discover nanometer-scale puddles of metallic conduction electrons centered… ▽ More A Kondo lattice is often electrically insulating at low temperatures. However, several recent experiments have detected signatures of bulk metallicity within this Kondo insulating phase. Here we visualize the real-space charge landscape within a Kondo lattice with atomic resolution using a scanning tunneling microscope. We discover nanometer-scale puddles of metallic conduction electrons centered around uranium-site substitutions in the heavy-fermion compound URu$_2$Si$_2$, and around samarium-site defects in the topological Kondo insulator SmB$_6$. These defects disturb the Kondo screening cloud, leaving behind a fingerprint of the metallic parent state. Our results suggest that the mysterious 3D quantum oscillations measured in SmB$_6$ could arise from these Kondo-lattice defects, although we cannot rule out other explanations. Our imaging technique could enable the development of atomic-scale charge sensors using heavy-fermion probes. △ Less

Submitted 27 March, 2023; originally announced March 2023.

Journal ref: Science 379, 1214 (2023)

Probing single-electron scattering through a non-Fermi liquid charge-Kondo device

Authors: Eran Sela, David Goldhaber-Gordon, A. Anthore, F. Pierre, Yuval Oreg

Abstract: Among the exotic and yet unobserved features of multi-channel Kondo impurity models is their sub-unitary single electron scattering. In the two-channel Kondo model, for example, an incoming electron is fully scattered into a many-body excitation such that the single particle Green function vanishes. Here we propose to directly observe these features in a charge-Kondo device encapsulated in a Mach-… ▽ More Among the exotic and yet unobserved features of multi-channel Kondo impurity models is their sub-unitary single electron scattering. In the two-channel Kondo model, for example, an incoming electron is fully scattered into a many-body excitation such that the single particle Green function vanishes. Here we propose to directly observe these features in a charge-Kondo device encapsulated in a Mach-Zehnder interferometer - within a device already studied in Ref.[1]. We provide detailed predictions for the visibility and phase of the Aharonov-Bohm oscillations depending on the number of coupled channels and the asymmetry of their couplings. △ Less

Submitted 4 February, 2023; originally announced February 2023.

Comments: 7 pages, 3 figures

Journal ref: Phys. Rev. B 107, L161108 (2023)

Low-damage electron beam lithography for nanostructures on Bi$_2$Te$_3$-class topological insulator thin films

Authors: Molly P. Andersen, Linsey K. Rodenbach, Ilan T. Rosen, Stanley C. Lin, Lei Pan, Peng Zhang, Lixuan Tai, Kang L. Wang, Marc A. Kastner, David Goldhaber-Gordon

Abstract: Nanostructured topological insulators (TIs) have the potential to impact a wide array of condensed matter physics topics, ranging from Majorana physics to spintronics. However, the most common TI materials, the Bi$_2$Se$_3$ family, are easily damaged during nanofabrication of devices. In this paper, we show that electron beam lithography performed with a 30 or 50 kV accelerating voltage -- common… ▽ More Nanostructured topological insulators (TIs) have the potential to impact a wide array of condensed matter physics topics, ranging from Majorana physics to spintronics. However, the most common TI materials, the Bi$_2$Se$_3$ family, are easily damaged during nanofabrication of devices. In this paper, we show that electron beam lithography performed with a 30 or 50 kV accelerating voltage -- common for nanopatterning in academic facilities -- damages both nonmagnetic TIs and their magnetically-doped counterparts at unacceptable levels. We additionally demonstrate that electron beam lithography with a 10 kV accelerating voltage produces minimal damage detectable through low-temperature electronic transport. Although reduced accelerating voltages present challenges in creating fine features, we show that with careful choice of processing parameters, particularly the resist, 100 nm features are reliably achievable. △ Less

Submitted 27 January, 2023; originally announced January 2023.

Comments: 10 pages, 5 figures

$\mathbb{Z}_3$ parafermion in the double charge-Kondo model

Authors: D. B. Karki, Edouard Boulat, Winston Pouse, David Goldhaber-Gordon, Andrew K. Mitchell, Christophe Mora

Abstract: Quantum impurity models with frustrated Kondo interactions can support quantum critical points with fractionalized excitations. Recent experiments [arXiv:2108.12691] on a circuit containing two coupled metal-semiconductor islands exhibit transport signatures of such a critical point. Here we show using bosonization that the double charge-Kondo model describing the device can be mapped in the Toulo… ▽ More Quantum impurity models with frustrated Kondo interactions can support quantum critical points with fractionalized excitations. Recent experiments [arXiv:2108.12691] on a circuit containing two coupled metal-semiconductor islands exhibit transport signatures of such a critical point. Here we show using bosonization that the double charge-Kondo model describing the device can be mapped in the Toulouse limit to a sine-Gordon model. Its Bethe-ansatz solution shows that a $\mathbb{Z}_3$ parafermion emerges at the critical point, characterized by a fractional $\tfrac{1}{2}\ln(3)$ residual entropy, and scattering fractional charges $e/3$. We also present full numerical renormalization group calculations for the model and show that the predicted behavior of conductance is consistent with experimental results. △ Less

Submitted 9 May, 2023; v1 submitted 10 October, 2022; originally announced October 2022.

Comments: 5 pages+, 3 figures

Journal ref: Phys. Rev. Lett. 130, 146201 (2023)

Unusual magnetotransport in twisted bilayer graphene from strain-induced open Fermi surfaces

Authors: Xiaoyu Wang, Joe Finney, Aaron L. Sharpe, Linsey K. Rodenbach, Connie L. Hsueh, Kenji Watanabe, Takashi Taniguchi, M. A. Kastner, Oskar Vafek, David Goldhaber-Gordon

Abstract: Anisotropic hopping in a toy Hofstadter model was recently invoked to explain a rich and surprising Landau spectrum measured in twisted bilayer graphene away from the magic angle. Suspecting that such anisotropy could arise from unintended uniaxial strain, we extend the Bistritzer-MacDonald model to include uniaxial heterostrain. We find that such strain strongly influences band structure, shiftin… ▽ More Anisotropic hopping in a toy Hofstadter model was recently invoked to explain a rich and surprising Landau spectrum measured in twisted bilayer graphene away from the magic angle. Suspecting that such anisotropy could arise from unintended uniaxial strain, we extend the Bistritzer-MacDonald model to include uniaxial heterostrain. We find that such strain strongly influences band structure, shifting the three otherwise-degenerate van Hove points to different energies. Coupled to a Boltzmann magnetotransport calculation, this reproduces previously-unexplained non-saturating $B^2$ magnetoresistance over broad ranges of density near filling $ν=\pm 2$, and predicts subtler features that had not been noticed in the experimental data. In contrast to these distinctive signatures in longitudinal resistivity, the Hall coefficient is barely influenced by strain, to the extent that it still shows a single sign change on each side of the charge neutrality point -- surprisingly, this sign change no longer occurs at a van Hove point. The theory also predicts a marked rotation of the electrical transport principal axes as a function of filling even for fixed strain and for rigid bands. More careful examination of interaction-induced nematic order versus strain effects in twisted bilayer graphene could thus be in order. △ Less

Submitted 16 September, 2022; originally announced September 2022.

Comments: 11 pages main text (4 figures) + 8 pages supplementary material (11 figures)

Journal ref: PNAS 120 (34) e2307151120 (2023)

Chromium-Doped Bismuth Antimony Telluride for Future Quantum Hall Resistance Standards

Authors: Albert F. Rigosi Linsey K. Rodenbach, Alireza R. Panna, Shamith U. Payagala, Ilan T. Rosen, Joseph A. Hagmann, Peng Zhang, Lixuan Tai, Kang L. Wang, Dean G. Jarrett, Randolph E. Elmquist, Jason M. Underwood, David B. Newell, David Goldhaber-Gordon

Abstract: Since 2017, epitaxial graphene has been the base material for the US national standard for resistance. A future avenue of research within electrical metrology is to remove the need for strong magnetic fields, as is currently the case for devices exhibiting the quantum Hall effect. The quantum Hall effect is just one of many research endeavours that revolve around recent quantum physical phenomena… ▽ More Since 2017, epitaxial graphene has been the base material for the US national standard for resistance. A future avenue of research within electrical metrology is to remove the need for strong magnetic fields, as is currently the case for devices exhibiting the quantum Hall effect. The quantum Hall effect is just one of many research endeavours that revolve around recent quantum physical phenomena like composite fermions, charge density waves, and topological properties [1-2]. New materials, like magnetically doped topological insulators (MTIs), offer access to the quantum anomalous Hall effect, which in its ideal form, could become a future resistance standard needing only a small permanent magnet to activate a quantized resistance value [3-5]. Furthermore, these devices could operate at zero-field for measurements, making the dissemination of the ohm more economical and portable. Here we present results on precision measurements of the h/e2 quantized plateau of Cr-Doped (BixSb1-x)2Te3 and give them context by comparing them to modern graphene-based resistance standards. Ultimately, MTI-based devices could be combined in a single system with magnetic-field-averse Josephson voltage standards to obtain an alternative quantum current standard. △ Less

Submitted 12 May, 2022; originally announced May 2022.

Feedback Lock-in: A versatile multi-terminal measurement system for electrical transport devices

Authors: Arthur W. Barnard, Evgeny Mikheev, Joe Finney, Han S. Hiller, David Goldhaber-Gordon

Abstract: We present the design and implementation of a measurement system that enables parallel drive and detection of small currents and voltages at numerous electrical contacts to a multi-terminal electrical device. This system, which we term a feedback lock-in, combines digital control-loop feedback with software-defined lock-in measurements to dynamically source currents and measure small, pre-amplifie… ▽ More We present the design and implementation of a measurement system that enables parallel drive and detection of small currents and voltages at numerous electrical contacts to a multi-terminal electrical device. This system, which we term a feedback lock-in, combines digital control-loop feedback with software-defined lock-in measurements to dynamically source currents and measure small, pre-amplified potentials. The effective input impedance of each current/voltage probe can be set via software, permitting any given contact to behave as an open-circuit voltage lead or as a virtually grounded current source/sink. This enables programmatic switching of measurement configurations and permits measurement of currents at multiple drain contacts without the use of current preamplifiers. Our 32-channel implementation relies on commercially available digital input/output boards, home-built voltage preamplifiers, and custom open-source software. With our feedback lock-in, we demonstrate differential measurement sensitivity comparable to a widely used commercially available lock-in amplifier and perform efficient multi-terminal electrical transport measurements on twisted bilayer graphene and $SrTiO_3$ quantum point contacts. The feedback lock-in also enables a new style of current-biased measurement which we demonstrate on a ballistic graphene device. △ Less

Submitted 23 February, 2022; originally announced February 2022.

Clean quantum point contacts in an InAs quantum well grown on a lattice-mismatched InP substrate

Authors: Connie L. Hsueh, Praveen Sriram, Tiantian Wang, Candice Thomas, Geoffrey Gardner, Marc A. Kastner, Michael J. Manfra, David Goldhaber-Gordon

Abstract: Strong spin-orbit coupling, the resulting large $g$ factor, and small effective mass make InAs an attractive material platform for inducing topological superconductivity. The surface Fermi level pinning in the conduction band enables highly transparent ohmic contact without excessive doping. We investigate electrostatically defined quantum point contacts (QPCs) in a deep-well InAs two-dimensional… ▽ More Strong spin-orbit coupling, the resulting large $g$ factor, and small effective mass make InAs an attractive material platform for inducing topological superconductivity. The surface Fermi level pinning in the conduction band enables highly transparent ohmic contact without excessive doping. We investigate electrostatically defined quantum point contacts (QPCs) in a deep-well InAs two-dimensional electron gas. Despite the 3.3% lattice mismatch between the InAs quantum well and the InP substrate, we report clean QPCs with up to eight pronounced quantized conductance plateaus at zero magnetic field. Source-drain dc bias spectroscopy reveals a harmonic confinement potential with a nearly $5$ meV subband spacing. We find a many-body exchange interaction enhancement for the out-of-plane $g$ factor $|g_{\perp}^*| = 27 \pm 1$, whereas the in-plane $g$ factor is isotropic $|g^*_{x}| = |g^*_{y}| = 12 \pm 2$, close to the bulk value for InAs. △ Less

Submitted 14 May, 2022; v1 submitted 11 February, 2022; originally announced February 2022.

Comments: Main text (8 pages, 5 figures), Supplemental Material (10 pages, 10 figures)

Journal ref: Phys. Rev. B 105, 195303 (2022)

Measured potential profile in a quantum anomalous Hall system suggests bulk-dominated current flow

Authors: Ilan T. Rosen, Molly P. Andersen, Linsey K. Rodenbach, Lixuan Tai, Peng Zhang, Kang L. Wang, M. A. Kastner, David Goldhaber-Gordon

Abstract: Ideally, quantum anomalous Hall systems should display zero longitudinal resistance. Yet in experimental quantum anomalous Hall systems elevated temperature can make the longitudinal resistance finite, indicating dissipative flow of electrons. Here, we show that the measured potentials at multiple locations within a device at elevated temperature are well-described by solution of Laplace's equatio… ▽ More Ideally, quantum anomalous Hall systems should display zero longitudinal resistance. Yet in experimental quantum anomalous Hall systems elevated temperature can make the longitudinal resistance finite, indicating dissipative flow of electrons. Here, we show that the measured potentials at multiple locations within a device at elevated temperature are well-described by solution of Laplace's equation, assuming spatially-uniform conductivity, suggesting non-equilibrium current flows through the two-dimensional bulk. Extrapolation suggests that at even lower temperatures current may still flow primarily through the bulk rather than, as had been assumed, through edge modes. An argument for bulk current flow previously applied to quantum Hall systems supports this picture. △ Less

Submitted 7 November, 2022; v1 submitted 24 December, 2021; originally announced December 2021.

Comments: 6 pages, 4 figures, plus supplemental materials

Journal ref: Phys. Rev. Lett. 129, 246602 (2022)

Ionic liquid gating of SrTiO$_3$ lamellas fabricated with a focused ion beam

Authors: Evgeny Mikheev, Tino Zimmerling, Amelia Estry, Philip J. W. Moll, David Goldhaber-Gordon

Abstract: In this work, we combine two previously-incompatible techniques for defining electronic devices: shaping three-dimensional crystals by focused ion beam (FIB), and two-dimensional electrostatic accumulation of charge carriers. The principal challenge for this integration is nanometer-scale surface damage inherent to any FIB-based fabrication. We address this by using a sacrificial protective layer… ▽ More In this work, we combine two previously-incompatible techniques for defining electronic devices: shaping three-dimensional crystals by focused ion beam (FIB), and two-dimensional electrostatic accumulation of charge carriers. The principal challenge for this integration is nanometer-scale surface damage inherent to any FIB-based fabrication. We address this by using a sacrificial protective layer to preserve a selected pristine surface. The test case presented here is accumulation of 2D carriers by ionic liquid gating at the surface of a micron-scale SrTiO$_3$ lamella. Preservation of surface quality is reflected in superconductivity of the accumulated carriers. This technique opens new avenues for realizing electrostatic charge tuning in materials that are not available as large or exfoliatable single crystals, and for patterning the geometry of the accumulated carriers. △ Less

Submitted 1 November, 2021; originally announced November 2021.

Clean ballistic quantum point contact in SrTiO$_3$

Authors: Evgeny Mikheev, Ilan T. Rosen, Marc A. Kastner, David Goldhaber-Gordon

Abstract: Two dimensional electron gases based on SrTiO$_3$ are an intriguing platform for exploring mesoscopic superconductivity combined with spin-orbit coupling, offering electrostatic tunability from insulator to metal to superconductor within a single material. So far, however, quantum effects in SrTiO$_3$ nanostructures have been complicated by disorder. Here we introduce a facile approach to achievin… ▽ More Two dimensional electron gases based on SrTiO$_3$ are an intriguing platform for exploring mesoscopic superconductivity combined with spin-orbit coupling, offering electrostatic tunability from insulator to metal to superconductor within a single material. So far, however, quantum effects in SrTiO$_3$ nanostructures have been complicated by disorder. Here we introduce a facile approach to achieving high mobility and patterning gate-tunable structures in SrTiO$_3$, and use it to demonstrate ballistic constrictions with clean normal state conductance quantization. Conductance plateaus show two-fold degeneracy that persists to magnetic fields of at least 5 T - far beyond what one would expect from the $g$-factor extracted at high fields - a potential signature of electron pairing extending outside the superconducting regime. △ Less

Submitted 21 October, 2021; originally announced October 2021.

Fractional AC Josephson effect in a topological insulator proximitized by a self-formed superconductor

Authors: Ilan T. Rosen, Christie J. Trimble, Molly P. Andersen, Evgeny Mikheev, Yanbin Li, Yunzhi Liu, Lixuan Tai, Peng Zhang, Kang L. Wang, Yi Cui, M. A. Kastner, James R. Williams, David Goldhaber-Gordon

Abstract: A lateral Josephson junction in which the surface of a 3D topological insulator serves as the weak link should support topologically protected excitations related to Majorana fermions. The resulting $4π$-periodic current-phase relationship could be detected under high-frequency excitation by the suppression of odd Shapiro steps. Here, we demonstrate such devices through the self-formation of a Pd-… ▽ More A lateral Josephson junction in which the surface of a 3D topological insulator serves as the weak link should support topologically protected excitations related to Majorana fermions. The resulting $4π$-periodic current-phase relationship could be detected under high-frequency excitation by the suppression of odd Shapiro steps. Here, we demonstrate such devices through the self-formation of a Pd-Te superconducting layer from a telluride topological insulator, and observe suppressed first and third Shapiro steps. Other devices, including those where the Pd-Te layer is bolstered by an additional Al layer, show no suppression of Shapiro steps, a difference supported by simulations. Though we rule out the known trivial causes of suppressed Shapiro steps in our devices, we nevertheless argue that corroborating measurements and disorder-aware theoretical descriptions of these systems are needed before confidently claiming the observation of Majorana states. △ Less

Submitted 31 July, 2024; v1 submitted 3 October, 2021; originally announced October 2021.

Comments: 10 pages, 5 figures, plus Supplemental Material

Journal ref: Phys. Rev. B 110, 064511 (2024)

Quantum Imaging of Single-Atom Spin-Splitting in a Monolayer Semiconductor

Authors: Caleb Z. Zerger, Alex W. Contryman, Changmin Lee, Shreyas Patankar, Joseph Orenstein, Tyler J. Layden, Marc A. Kastner, David Goldhaber-Gordon, Xiaolin Zheng, Hong Li, Hari C. Manoharan

Abstract: Theoretical work has suggested that monolayer MoS2 doped with Mn should behave as a two-dimensional dilute magnetic semiconductor, which would open up possibilities for spintronic applications, device physics, and novel ground states. The magnetic properties on Mn dopants in MoS2 are dependent on the mid-gap impurity states of said dopants as well as the sites of dopant incorporation and dopant co… ▽ More Theoretical work has suggested that monolayer MoS2 doped with Mn should behave as a two-dimensional dilute magnetic semiconductor, which would open up possibilities for spintronic applications, device physics, and novel ground states. The magnetic properties on Mn dopants in MoS2 are dependent on the mid-gap impurity states of said dopants as well as the sites of dopant incorporation and dopant concentration. In this work we use STM/STS to characterize multiple impurity types associated with Mn dopants in MoS2, and use ring features that appear in spectral maps due to tip-induced band bending to investigate the nature of the mid-gap impurity states. The doublet nature of the rings and comparison to DFT calculations show that the Mn states exhibit strong spin splitting which can be quantified. We used scanned MOKE experiments to extend these magnetization measurements from atomic scale to mm scales, and detect the spin susceptibility signal which increases with Mn concentration. These experiments show that single Mn atoms in MoS2 function as active unscreened magnetic moments in the TMD monolayer, and can be harnessed for spin physics applications and science. △ Less

Submitted 3 September, 2021; originally announced September 2021.

Nanoscale electronic transparency of wafer-scale hexagonal boron nitride

Authors: Caleb Z. Zerger, Linsey K. Rodenbach, Yi-Ting Chen, Benjamin Safvati, Morgan Z. Brubaker, Steven Tran, Tse-An Chen, Ming-Yang Li, Lain-Jong Li, David Goldhaber-Gordon, Hari C. Manoharan

Abstract: Monolayer hBN has attracted interest as a potentially weakly interacting 2D insulating layer in heterostructures. Recently, wafer-scale hBN growth on Cu(111) has been demonstrated for semiconductor chip fabrication processes and transistor action. For all these applications, the perturbation on the underlying electronically active layers is critical. For example, while hBN on Cu(111) has been show… ▽ More Monolayer hBN has attracted interest as a potentially weakly interacting 2D insulating layer in heterostructures. Recently, wafer-scale hBN growth on Cu(111) has been demonstrated for semiconductor chip fabrication processes and transistor action. For all these applications, the perturbation on the underlying electronically active layers is critical. For example, while hBN on Cu(111) has been shown to preserve the Cu(111) surface state 2D electron gas, it was previously unknown how this varies over the sample and how it is affected by local electronic corrugation. Here, we demonstrate that the Cu(111) surface state under wafer-scale hBN is robustly homogeneous in energy and spectral weight over nanometer length scales and over atomic terraces. We contrast this with a benchmark spectral feature associated with interaction between BN atoms and the Cu surface, which varies with the Moiré pattern of the hBN/Cu(111) sample and is dependent on atomic registry. This work demonstrates that fragile 2D electron systems and interface states are largely unperturbed by local variations created by the hBN due to atomic-scale interactions with the substrate, thus providing a remarkably transparent window on low-energy electronic structure below the hBN monolayer. △ Less

Submitted 3 September, 2021; originally announced September 2021.

Quantum simulation of an exotic quantum critical point in a two-site charge Kondo circuit

Authors: Winston Pouse, Lucas Peeters, Connie L. Hsueh, Ulf Gennser, Antonella Cavanna, Marc A. Kastner, Andrew K. Mitchell, David Goldhaber-Gordon

Abstract: Tuning a material to the cusp between two distinct ground states can produce exotic physical properties, unlike those in either of the neighboring phases. The prospect of designing a model experimental system to capture such behavior is tantalizing. An array of tunnel-coupled quantum dots, each hosting a local spin, should have an appropriately complex phase diagram, but scaling up from individual… ▽ More Tuning a material to the cusp between two distinct ground states can produce exotic physical properties, unlike those in either of the neighboring phases. The prospect of designing a model experimental system to capture such behavior is tantalizing. An array of tunnel-coupled quantum dots, each hosting a local spin, should have an appropriately complex phase diagram, but scaling up from individual dots to uniform clusters or lattices has proven difficult: though each site can be tuned to the same occupancy, each has a different set of localized wavefunctions whose couplings to neighboring sites cannot be made fully uniform. An array of metal nanostructures has complementary strengths and weaknesses: simple electrostatic tuning can make each element behave essentially identically, but intersite coupling is not tunable. In this work, we study a tunable nanoelectronic circuit comprising two coupled hybrid metallic-semiconductor islands, combining the strengths of the two types of materials, and demonstrating the potential for scalability. With two charge states of an island acting as an effective spin-1/2, the new architecture also offers a rich range of coupling interactions, and we exploit this to demonstrate a novel quantum critical point. Experimental results in the vicinity of the critical point match striking theoretical predictions. △ Less

Submitted 11 March, 2022; v1 submitted 28 August, 2021; originally announced August 2021.

Comments: Main text (8 pages, 3 figures), Methods (5 pages, 4 figures), and Supplementary Info (5 pages, 6 figures)

Bulk dissipation in the quantum anomalous Hall effect

Authors: Linsey K. Rodenbach, Ilan T. Rosen, Eli J. Fox, Peng Zhang, Lei Pan, Kang L. Wang, Marc A. Kastner, David Goldhaber-Gordon

Abstract: Even at the lowest accessible temperatures, measurements of the quantum anomalous Hall (QAH) effect have indicated the presence of parasitic dissipative conduction channels. There is no consensus whether parasitic conduction is related to processes in the bulk or along the edges. Here, we approach this problem by comparing transport measurements of Hall bar and Corbino geometry devices fabricated… ▽ More Even at the lowest accessible temperatures, measurements of the quantum anomalous Hall (QAH) effect have indicated the presence of parasitic dissipative conduction channels. There is no consensus whether parasitic conduction is related to processes in the bulk or along the edges. Here, we approach this problem by comparing transport measurements of Hall bar and Corbino geometry devices fabricated from Cr-doped (BiSb)$_2$Te$_3$. We identify bulk conduction as the dominant source of dissipation at all values of temperature and in-plane electric field. Furthermore, we observe identical breakdown phenomenology in both geometries, indicating that breakdown of the QAH phase is a bulk process. The methodology developed in this study could be used to identify dissipative conduction mechanisms in new QAH materials, ultimately guiding material development towards realization of the QAH effect at higher temperatures. △ Less

Submitted 5 August, 2021; v1 submitted 18 May, 2021; originally announced May 2021.

Comments: 9 pages, 4 figures, with 11 pages of supplementary information

Journal ref: APL Materials 9, 081116 (2021)

Unusual magnetotransport in twisted bilayer graphene

Authors: Joe Finney, Aaron L. Sharpe, Eli J. Fox, Connie L. Hsueh, Daniel E. Parker, Matthew Yankowitz, Shaowen Chen, Kenji Watanabe, Takashi Taniguchi, Cory R. Dean, Ashvin Vishwanath, Marc Kastner, David Goldhaber-Gordon

Abstract: We present transport measurements of bilayer graphene with 1.38° interlayer twist and apparent additional alignment to its hexagonal boron nitride cladding. As with other devices with twist angles substantially larger than the magic angle of 1.1°, we do not observe correlated insulating states or band reorganization. However, we do observe several highly unusual behaviors in magnetotransport. For… ▽ More We present transport measurements of bilayer graphene with 1.38° interlayer twist and apparent additional alignment to its hexagonal boron nitride cladding. As with other devices with twist angles substantially larger than the magic angle of 1.1°, we do not observe correlated insulating states or band reorganization. However, we do observe several highly unusual behaviors in magnetotransport. For a large range of densities around half filling of the moiré bands, magnetoresistance is large and quadratic. Over these same densities, the magnetoresistance minima corresponding to gaps between Landau levels split and bend as a function of density and field. We reproduce the same splitting and bending behavior in a simple tight-binding model of Hofstadter's butterfly on a square lattice with anisotropic hopping terms. These features appear to be a generic class of experimental manifestations of Hofstadter's butterfly and may provide insight into the emergent states of twisted bilayer graphene. △ Less

Submitted 11 June, 2021; v1 submitted 5 May, 2021; originally announced May 2021.

Comments: 8 pages, 4 figures; updated supplemental material; added additional device measurements and updated toy model

Evidence of orbital ferromagnetism in twisted bilayer graphene aligned to hexagonal boron nitride

Authors: Aaron L. Sharpe, Eli J. Fox, Arthur W. Barnard, Joe Finney, Kenji Watanabe, Takashi Taniguchi, Marc A. Kastner, David Goldhaber-Gordon

Abstract: We have previously reported ferromagnetism evinced by a large hysteretic anomalous Hall effect in twisted bilayer graphene (tBLG). Subsequent measurements of a quantized Hall resistance and small longitudinal resistance confirmed that this magnetic state is a Chern insulator. Here we report that, when tilting the sample in an external magnetic field, the ferromagnetism is highly anisotropic. Becau… ▽ More We have previously reported ferromagnetism evinced by a large hysteretic anomalous Hall effect in twisted bilayer graphene (tBLG). Subsequent measurements of a quantized Hall resistance and small longitudinal resistance confirmed that this magnetic state is a Chern insulator. Here we report that, when tilting the sample in an external magnetic field, the ferromagnetism is highly anisotropic. Because spin-orbit coupling is negligible in graphene such anisotropy is unlikely to come from spin, but rather favors theories in which the ferromagnetism is orbital. We know of no other case in which ferromagnetism has a purely orbital origin. For an applied in-plane field larger than $5\ \mathrm{T}$, the out-of-plane magnetization is destroyed, suggesting a transition to a new phase. △ Less

Submitted 18 February, 2021; v1 submitted 8 February, 2021; originally announced February 2021.

Comments: 30 pages, 10 figures

Tunable ferromagnetism at non-integer filling of a moiré superlattice

Authors: Guorui Chen, Aaron L. Sharpe, Eli J. Fox, Shaoxin Wang, Bosai Lyu, Lili Jiang, Hongyuan Li, Kenji Watanabe, Takashi Taniguchi, Michael F. Crommie, M. A. Kastner, Zhiwen Shi, David Goldhaber-Gordon, Yuanbo Zhang, Feng Wang

Abstract: The flat bands resulting from moiré superlattices in magic-angle twisted bilayer graphene (MATBG) and ABC-trilayer graphene aligned with hexagonal boron nitride (ABC-TLG/hBN) have been shown to give rise to fascinating correlated electron phenomena such as correlated insulators and superconductivity. More recently, orbital magnetism associated with correlated Chern insulators was found in this cla… ▽ More The flat bands resulting from moiré superlattices in magic-angle twisted bilayer graphene (MATBG) and ABC-trilayer graphene aligned with hexagonal boron nitride (ABC-TLG/hBN) have been shown to give rise to fascinating correlated electron phenomena such as correlated insulators and superconductivity. More recently, orbital magnetism associated with correlated Chern insulators was found in this class of layered structures centered at integer multiples of n0, the density corresponding to one electron per moiré superlattice unit cell. Here we report the experimental observation of ferromagnetism at fractional filling of a flat Chern band in an ABC-TLG/hBN moirésuperlattice. The ferromagnetic state exhibits prominent ferromagnetic hysteresis behavior with large anomalous Hall resistivity in a broad region of densities, centered in the valence miniband at n = -2.3 n0. This ferromagnetism depends very sensitively on the control parameters in the moiré system: not only the magnitude of the anomalous Hall signal, but also the sign of the hysteretic ferromagnetic response can be modulated by tuning the carrier density and displacement field. Our discovery of electrically tunable ferromagnetism in a moiré Chern band at non-integer filling highlights the opportunities for exploring new correlated ferromagnetic states in moiré heterostructures. △ Less

Submitted 18 December, 2020; originally announced December 2020.

Comments: 12 pages, 4 figures

Application-Driven Synthesis and Characterization of Hexagonal Boron Nitride on Metal and Carbon Nanotube Substrates

Authors: Victoria Chen, Yong Cheol Shin, Evgeny Mikheev, Joel Martis, Ze Zhang, Sukti Chatterjee, Arun Majumdar, David Goldhaber-Gordon, Eric Pop

Abstract: Hexagonal boron nitride (h-BN) is unique among two-dimensional materials, with a large band gap (~6 eV) and high thermal conductivity (>400 W/m/K), second only to diamond among electrical insulators. Most electronic studies to date have relied on h-BN exfoliated from bulk crystals; however, for scalable applications the material must be synthesized by methods such as chemical vapor deposition (CVD… ▽ More Hexagonal boron nitride (h-BN) is unique among two-dimensional materials, with a large band gap (~6 eV) and high thermal conductivity (>400 W/m/K), second only to diamond among electrical insulators. Most electronic studies to date have relied on h-BN exfoliated from bulk crystals; however, for scalable applications the material must be synthesized by methods such as chemical vapor deposition (CVD). Here, we demonstrate single- and few-layer h-BN synthesized by CVD on single crystal platinum and on carbon nanotube (CNT) substrates, also comparing these films with h-BN deposited on the more commonly used polycrystalline Pt and Cu growth substrates. The h-BN film grown on single crystal Pt has a lower surface roughness and is more spatially homogeneous than the film from a polycrystalline Pt foil, and our electrochemical transfer process allows for these expensive foils to be reused with no measurable degradation. In addition, we demonstrate monolayer h-BN as an ultrathin, 3.33 $\unicode{x212B}$ barrier protecting MoS2 from damage at high temperatures and discuss other applications that take advantage of the conformal h-BN deposition on various substrates demonstrated in this work. △ Less

Submitted 29 November, 2020; originally announced November 2020.

Journal ref: 2D Materials 8, 045024 (2021)

Quantized critical supercurrent in SrTiO$_3$-based quantum point contacts

Authors: Evgeny Mikheev, Ilan T. Rosen, David Goldhaber-Gordon

Abstract: Superconductivity in SrTiO$_3$ occurs at remarkably low carrier densities and therefore, unlike conventional superconductors, can be controlled by electrostatic gates. Here we demonstrate nanoscale weak links connecting superconducting leads, all within a single material, SrTiO$_3$. Ionic liquid gating accumulates carriers in the leads, and local electrostatic gates are tuned to open the weak link… ▽ More Superconductivity in SrTiO$_3$ occurs at remarkably low carrier densities and therefore, unlike conventional superconductors, can be controlled by electrostatic gates. Here we demonstrate nanoscale weak links connecting superconducting leads, all within a single material, SrTiO$_3$. Ionic liquid gating accumulates carriers in the leads, and local electrostatic gates are tuned to open the weak link. These devices behave as superconducting quantum point contacts with a quantized critical supercurrent. This is a milestone towards establishing SrTiO$_3$ as a single-material platform for mesoscopic superconducting transport experiments, that also intrinsically contains the necessary ingredients to engineer topological superconductivity △ Less

Submitted 14 June, 2021; v1 submitted 30 September, 2020; originally announced October 2020.

Giant Orbital Magneto-electric effect and Current-driven Magnetization Switching in Twisted Bilayer Graphene

Authors: Wen-Yu He, David Goldhaber-Gordon, K. T. Law

Abstract: Recently, signatures of quantum anomalous Hall states with spontaneous ferromagnetism were observed in twisted bilayer graphenes (TBGs) near 3/4 filling [1, 2]. Importantly, it was demon-strated that an extremely small current can switch the direction of the magnetization. This offers the prospect of realizing low energy dissipation magnetic memories. However, the mechanism of the current-driven m… ▽ More Recently, signatures of quantum anomalous Hall states with spontaneous ferromagnetism were observed in twisted bilayer graphenes (TBGs) near 3/4 filling [1, 2]. Importantly, it was demon-strated that an extremely small current can switch the direction of the magnetization. This offers the prospect of realizing low energy dissipation magnetic memories. However, the mechanism of the current-driven magnetization switching is poorly understood as the charge currents in graphene layers are generally believed to be non-magnetic. In this work, we demonstrate that, in TBGs, the twist-induced reduction of lattice symmetry allows a charge current to generate net orbital magnetization at a general filling factor through magnetoelectric effects. Substrate-induced strain and sublattice symmetry breaking further reduce the symmetry such that an out-of-plane orbital magnetization can be generated. Due to the large non-trivial Berry phase of the flat bands, the orbital magnetization of a Bloch state can be as large as tens of Bohr magnetons and therefore a small current would be sufficient to generate a large orbital magnetization. We further demonstrate how the charge current with orbital magnetization can switch the magnetization of the quantum anomalous Hall state near 3/4 filling as observed in the experiments [1, 2]. △ Less

Submitted 3 April, 2020; v1 submitted 30 August, 2019; originally announced August 2019.

Comments: 9 pages, 4 figures, plus supplementary material. To appear in Nature Communications

Journal ref: Nature Communications 11, 1650 (2020)

Tunable Correlated Chern Insulator and Ferromagnetism in Trilayer Graphene/Boron Nitride Moiré Superlattice

Authors: Guorui Chen, Aaron L. Sharpe, Eli J. Fox, Ya-Hui Zhang, Shaoxin Wang, Lili Jiang, Bosai Lyu, Hongyuan Li, Kenji Watanabe, Takashi Taniguchi, Zhiwen Shi, T. Senthil, David Goldhaber-Gordon, Yuanbo Zhang, Feng Wang

Abstract: Studies on two-dimensional electron systems in a strong magnetic field first revealed the quantum Hall (QH) effect, a topological state of matter featuring a finite Chern number (C) and chiral edge states. Haldane later theorized that Chern insulators with integer QH effects could appear in lattice models with complex hopping parameters even at zero magnetic field. The ABC-trilayer graphene/hexago… ▽ More Studies on two-dimensional electron systems in a strong magnetic field first revealed the quantum Hall (QH) effect, a topological state of matter featuring a finite Chern number (C) and chiral edge states. Haldane later theorized that Chern insulators with integer QH effects could appear in lattice models with complex hopping parameters even at zero magnetic field. The ABC-trilayer graphene/hexagonal boron nitride (TLG/hBN) moiré superlattice provides an attractive platform to explore Chern insulators because it features nearly flat moiré minibands with a valley-dependent electrically tunable Chern number. Here we report the experimental observation of a correlated Chern insulator in a TLG/hBN moiré superlattice. We show that reversing the direction of the applied vertical electric field switches TLG/hBN's moiré minibands between zero and finite Chern numbers, as revealed by dramatic changes in magneto-transport behavior. For topological hole minibands tuned to have a finite Chern number, we focus on 1/4 filling, corresponding to one hole per moiré unit cell. The Hall resistance is well quantized at h/2e2, i.e. C = 2, for |B| > 0.4 T. The correlated Chern insulator is ferromagnetic, exhibiting significant magnetic hysteresis and a large anomalous Hall signal at zero magnetic field. Our discovery of a C = 2 Chern insulator at zero magnetic field should open up exciting opportunities for discovering novel correlated topological states, possibly with novel topological excitations, in nearly flat and topologically nontrivial moiré minibands. △ Less

Submitted 16 May, 2019; originally announced May 2019.

Comments: 16 pages, 4 figures, and 2 extended figures

Absence of strong localization at low conductivity in the topological surface state of low disorder Sb2Te3

Authors: Ilan T. Rosen, Indra Yudhistira, Gargee Sharma, Maryam Salehi, M. A. Kastner, Seongshik Oh, Shaffique Adam, David Goldhaber-Gordon

Abstract: We present low-temperature transport measurements of a gate-tunable thin film topological insulator system that features high mobility and low carrier density. Upon gate tuning to a regime around the charge neutrality point, we infer an absence of strong localization even at conductivities well below $e^2/h$, where two dimensional electron systems should conventionally scale to an insulating sta… ▽ More We present low-temperature transport measurements of a gate-tunable thin film topological insulator system that features high mobility and low carrier density. Upon gate tuning to a regime around the charge neutrality point, we infer an absence of strong localization even at conductivities well below $e^2/h$, where two dimensional electron systems should conventionally scale to an insulating state. Oddly, in this regime the localization coherence peak lacks conventional temperature broadening, though its tails do change dramatically with temperature. Using a model with electron-impurity scattering, we extract values for the disorder potential and the hybridization of the top and bottom surface states. △ Less

Submitted 22 March, 2019; originally announced March 2019.

Comments: 6 pages, 4 figures, with 11 pages of supplementary information

Journal ref: Phys. Rev. B 99, 201101 (2019)

Quantum-Hall to Insulator Transition in Ultra-low-carrier-density Topological Insulator Films and a Hidden Phase of the Zeroth Landau Level

Authors: Maryam Salehi, Hassan Shapourian, Ilan Thomas Rosen, Myung-Geun Han, Jisoo Moon, Pavel Shibayev, Deepti Jain, David Goldhaber-Gordon, Seongshik Oh

Abstract: A key feature of the topological surface state under a magnetic field is the presence of the zeroth Landau level at the zero energy. Nonetheless, it has been challenging to probe the zeroth Landau level due to large electron-hole puddles smearing its energy landscape. Here, by developing ultra-low-carrier density topological insulator Sb$_2$Te$_3$ films, we were able to reach an extreme quantum li… ▽ More A key feature of the topological surface state under a magnetic field is the presence of the zeroth Landau level at the zero energy. Nonetheless, it has been challenging to probe the zeroth Landau level due to large electron-hole puddles smearing its energy landscape. Here, by developing ultra-low-carrier density topological insulator Sb$_2$Te$_3$ films, we were able to reach an extreme quantum limit of the topological surface state and uncover a hidden phase at the zeroth Landau level. First, we discovered an unexpected quantum-Hall-to-insulator-transition near the zeroth Landau level. Then, through a detailed scaling analysis, we found that this quantum-Hall-to-insulator-transition belongs to a new universality class, implying that the insulating phase discovered here has a fundamentally different origin from those in non-topological systems. △ Less

Submitted 5 July, 2019; v1 submitted 1 March, 2019; originally announced March 2019.

Comments: 22 pages, 5 figures, Appendix (28 pages)

Journal ref: Adv. Mater. 2019, 1901091

Super-geometric electron focusing on the hexagonal Fermi surface of PdCoO$_2$

Authors: Maja D. Bachmann, Aaron L. Sharpe, Arthur W. Barnard, Carsten Putzke, Markus König, Seunghyun Khim, David Goldhaber-Gordon, Andrew P. Mackenzie, Philip J. W. Moll

Abstract: Geometric electron optics may be implemented in solid state when transport is ballistic on the length scale of a device. Currently, this is realized mainly in 2D materials characterized by circular Fermi surfaces. Here we demonstrate that the nearly perfectly hexagonal Fermi surface of PdCoO2 gives rise to highly directional ballistic transport. We probe this directional ballistic regime in a sing… ▽ More Geometric electron optics may be implemented in solid state when transport is ballistic on the length scale of a device. Currently, this is realized mainly in 2D materials characterized by circular Fermi surfaces. Here we demonstrate that the nearly perfectly hexagonal Fermi surface of PdCoO2 gives rise to highly directional ballistic transport. We probe this directional ballistic regime in a single crystal of PdCoO2 by use of focused ion beam (FIB) micro-machining, defining crystalline ballistic circuits with features as small as 250nm. The peculiar hexagonal Fermi surface naturally leads to electron self-focusing effects in a magnetic field, well below the geometric limit associated with a circular Fermi surface. This super-geometric focusing can be quantitatively predicted for arbitrary device geometry, based on the hexagonal cyclotron orbits appearing in this material. These results suggest a novel class of ballistic electronic devices exploiting the unique transport characteristics of strongly faceted Fermi surfaces. △ Less

Submitted 11 February, 2019; originally announced February 2019.

Journal ref: Nature Communications 10, 5081 (2019)

Signatures of Gate-Tunable Superconductivity in Trilayer Graphene/Boron Nitride Moiré Superlattice

Authors: Guorui Chen, Aaron L. Sharpe, Patrick Gallagher, Ilan T. Rosen, Eli Fox, Lili Jiang, Bosai Lyu, Hongyuan Li, Kenji Watanabe, Takashi Taniguchi, Jeil Jung, Zhiwen Shi, David Goldhaber-Gordon, Yuanbo Zhang, Feng Wang

Abstract: Understanding the mechanism of high temperature (high Tc) superconductivity is a central problem in condensed matter physics. It is often speculated that high Tc superconductivity arises from a doped Mott insulator as described by the Hubbard model. An exact solution of the Hubbard model, however, is extremely challenging due to the strong electron-electron correlation. Therefore, it is highly des… ▽ More Understanding the mechanism of high temperature (high Tc) superconductivity is a central problem in condensed matter physics. It is often speculated that high Tc superconductivity arises from a doped Mott insulator as described by the Hubbard model. An exact solution of the Hubbard model, however, is extremely challenging due to the strong electron-electron correlation. Therefore, it is highly desirable to experimentally study a model Hubbard system in which the unconventional superconductivity can be continuously tuned by varying the Hubbard parameters. Here we report signatures of tunable superconductivity in ABC-trilayer graphene (TLG) / boron nitride (hBN) moiré superlattice. Unlike "magic angle" twisted bilayer graphene, theoretical calculations show that under a vertical displacement field the ABC-TLG/hBN heterostructure features an isolated flat valence miniband associated with a Hubbard model on a triangular superlattice. Upon applying such a displacement field we find experimentally that the ABC-TLG/hBN superlattice displays Mott insulating states below 20 Kelvin at 1/4 and 1/2 fillings, corresponding to 1 and 2 holes per unit cell, respectively. Upon further cooling, signatures of superconducting domes emerge below 1 kelvin for the electron- and hole-doped sides of the 1/4 filling Mott state. The electronic behavior in the TLG/hBN superlattice is expected to depend sensitively on the interplay between the electron-electron interaction and the miniband bandwidth, which can be tuned continuously with the displacement field D. By simply varying the D field, we demonstrate transitions from the candidate superconductor to Mott insulator and metallic phases. Our study shows that TLG/hBN heterostructures offer an attractive model system to explore rich correlated behavior emerging in the tunable triangular Hubbard model. △ Less

Submitted 14 January, 2019; originally announced January 2019.

Comments: 14 pages, 4 figures

Journal ref: Nature 572, 215-219 (2019)

Emergent ferromagnetism near three-quarters filling in twisted bilayer graphene

Authors: Aaron L. Sharpe, Eli J. Fox, Arthur W. Barnard, Joe Finney, Kenji Watanabe, Takashi Taniguchi, M. A. Kastner, David Goldhaber-Gordon

Abstract: When two sheets of graphene are stacked at a small twist angle, the resulting flat superlattice minibands are expected to strongly enhance electron-electron interactions. Here we present evidence that near three-quarters ($3/4$) filling of the conduction miniband these enhanced interactions drive the twisted bilayer graphene into a ferromagnetic state. We observe emergent ferromagnetic hysteresis,… ▽ More When two sheets of graphene are stacked at a small twist angle, the resulting flat superlattice minibands are expected to strongly enhance electron-electron interactions. Here we present evidence that near three-quarters ($3/4$) filling of the conduction miniband these enhanced interactions drive the twisted bilayer graphene into a ferromagnetic state. We observe emergent ferromagnetic hysteresis, with a giant anomalous Hall (AH) effect as large as $10.4\ \mathrm{kΩ}$ and signs of chiral edge states in a narrow density range around an apparent insulating state at $3/4$. Surprisingly, the magnetization of the sample can be reversed by applying a small DC current. Although the AH resistance is not quantized and dissipation is significant, we suggest that the system is an incipient Chern insulator. △ Less

Submitted 11 January, 2019; originally announced January 2019.

Comments: 18 pages, 4 figures

Journal ref: Science 365, 605-608 (2019)

Significant Phonon Drag Enables High Power Factor in the AlGaN/GaN Two-Dimensional Electron Gas

Authors: Ananth Saran Yalamarthy, Miguel Muñoz Rojo, Alexandra Bruefach, Derrick Boone, Karen M. Dowling, Peter F. Satterthwaite, David Goldhaber-Gordon, Eric Pop, Debbie G. Senesky

Abstract: In typical thermoelectric energy harvesters and sensors, the Seebeck effect is caused by diffusion of electrons or holes in a temperature gradient. However, the Seebeck effect can also have a phonon drag component, due to momentum exchange between charge carriers and lattice phonons, which is more difficult to quantify. Here, we present the first study of phonon drag in the AlGaN/GaN two-dimension… ▽ More In typical thermoelectric energy harvesters and sensors, the Seebeck effect is caused by diffusion of electrons or holes in a temperature gradient. However, the Seebeck effect can also have a phonon drag component, due to momentum exchange between charge carriers and lattice phonons, which is more difficult to quantify. Here, we present the first study of phonon drag in the AlGaN/GaN two-dimensional electron gas (2DEG). We find that phonon drag does not contribute significantly to the thermoelectric behavior of devices with ~100 nm GaN thickness, which suppress the phonon mean free path. However, when the thickness is increased to ~1.2 $μ$m, up to 32% (88%) of the Seebeck coefficient at 300 K (50 K) can be attributed to the drag component. In turn, the phonon drag enables state-of-the-art thermoelectric power factor in the thicker GaN film, up to ~40 mW m$^{-1}$ K$^{-2}$ at 50 K. By measuring the thermal conductivity of these AlGaN/GaN films, we show that the magnitude of the phonon drag can increase even when the thermal conductivity decreases. Decoupling of thermal conductivity and Seebeck coefficient could enable important advancements in thermoelectric power conversion with devices based on 2DEGs. △ Less

Submitted 15 May, 2019; v1 submitted 21 September, 2018; originally announced September 2018.

Disorder From the Bulk Ionic Liquid in Electric Double Layer Transistors

Authors: Trevor A. Petach, K. V. Reich, Xiao Zhang, Kenji Watanabe, Takashi Taniguchi, B. I. Shklovskii, David Goldhaber-Gordon

Abstract: Ionic liquid gating has a number of advantages over solid-state gating, especially for flexible or transparent devices and for applications requiring high carrier densities. However, the large number of charged ions near the channel inevitably results in Coulomb scattering, which limits the carrier mobility in otherwise clean systems. We develop a model for this Coulomb scattering. We validate our… ▽ More Ionic liquid gating has a number of advantages over solid-state gating, especially for flexible or transparent devices and for applications requiring high carrier densities. However, the large number of charged ions near the channel inevitably results in Coulomb scattering, which limits the carrier mobility in otherwise clean systems. We develop a model for this Coulomb scattering. We validate our model experimentally using ionic liquid gating of graphene across varying thicknesses of hexagonal boron nitride, demonstrating that disorder in the bulk ionic liquid often dominates the scattering. △ Less

Submitted 23 January, 2018; originally announced January 2018.

Journal ref: ACS nano 11 (8), 8395-8400 (2017)

Part-per-million quantization and current-induced breakdown of the quantum anomalous Hall effect

Authors: E. J. Fox, I. T. Rosen, Yanfei Yang, George R. Jones, Randolph E. Elmquist, Xufeng Kou, Lei Pan, Kang L. Wang, D. Goldhaber-Gordon

Abstract: In the quantum anomalous Hall effect, quantized Hall resistance and vanishing longitudinal resistivity are predicted to result from the presence of dissipationless, chiral edge states and an insulating 2D bulk, without requiring an external magnetic field. Here, we explore the potential of this effect in magnetic topological insulator thin films for metrological applications. Using a cryogenic cur… ▽ More In the quantum anomalous Hall effect, quantized Hall resistance and vanishing longitudinal resistivity are predicted to result from the presence of dissipationless, chiral edge states and an insulating 2D bulk, without requiring an external magnetic field. Here, we explore the potential of this effect in magnetic topological insulator thin films for metrological applications. Using a cryogenic current comparator system, we measure quantization of the Hall resistance to within one part per million and longitudinal resistivity under 10 m$Ω$ per square at zero magnetic field. Increasing the current density past a critical value leads to a breakdown of the quantized, low-dissipation state, which we attribute to electron heating in bulk current flow. We further investigate the pre-breakdown regime by measuring transport dependence on temperature, current, and geometry, and find evidence for bulk dissipation, including thermal activation and possible variable-range hopping. △ Less

Submitted 4 October, 2017; originally announced October 2017.

Comments: 9 pages, 4 figures, with 7 pages of supplementary information

Journal ref: Phys. Rev. B 98, 075145 (2018)

Chiral transport along magnetic domain walls in the quantum anomalous Hall effect

Authors: I. T. Rosen, E. J. Fox, Xufeng Kou, Lei Pan, Kang L. Wang, D. Goldhaber-Gordon

Abstract: The recent prediction, and subsequent discovery, of the quantum anomalous Hall (QAH) effect in thin films of the three-dimensional ferromagnetic topological insulator (MTI) (Cr$_y$Bi$_x$Sb$_{1-x-y}$)$_2$Te$_3$ has opened new possibilities for chiral-edge-state-based devices in zero external magnetic field. Like the $ν=1$ quantum Hall system, the QAH system is predicted to have a single chiral edge… ▽ More The recent prediction, and subsequent discovery, of the quantum anomalous Hall (QAH) effect in thin films of the three-dimensional ferromagnetic topological insulator (MTI) (Cr$_y$Bi$_x$Sb$_{1-x-y}$)$_2$Te$_3$ has opened new possibilities for chiral-edge-state-based devices in zero external magnetic field. Like the $ν=1$ quantum Hall system, the QAH system is predicted to have a single chiral edge mode circulating along the boundary of the film. Backscattering of the chiral edge mode should be suppressed, as recently verified by the observation of well-quantized Hall resistivities $ρ_{yx} = \pm h/e^2$, along with longitudinal resistivities as low as a few ohms. Dissipationless 1D conduction is also expected along magnetic domain walls. Here, we intentionally create a magnetic domain wall in a MTI and study electrical transport along the domain wall. We present the first observation of chiral transport along domain walls, in agreement with theoretical predictions. We present further evidence that two modes equilibrate and co-propagate along the length of the domain wall. △ Less

Submitted 26 July, 2017; originally announced July 2017.

Comments: 5 pages, 3 figures, with 8 pages of supplementary information

Journal ref: npj Quantum Materials 2, 69 (2017)

Crystal truncation rods from miscut surfaces

Authors: Trevor A Petach, Apurva Mehta, Michael F Toney, David Goldhaber-Gordon

Abstract: Crystal truncation rods are used to study surface and interface structure. Since real surfaces are always somewhat miscut from a low index plane, it is important to study the effect of miscut on crystal truncation rods. We develop a model that describes the truncation rod scattering from miscut surfaces that have steps and terraces. We show that non-uniform terrace widths and jagged step edges are… ▽ More Crystal truncation rods are used to study surface and interface structure. Since real surfaces are always somewhat miscut from a low index plane, it is important to study the effect of miscut on crystal truncation rods. We develop a model that describes the truncation rod scattering from miscut surfaces that have steps and terraces. We show that non-uniform terrace widths and jagged step edges are both forms of roughness that decrease the intensity of the rods. Non-uniform terrace widths also result in a broad peak that overlaps the rods. We use our model to characterize the terrace width distribution and step edge jaggedness on three SrTiO$_3$ (001) samples, showing excellent agreement between the model and the data, confirmed by atomic force micrographs of the surface morphology. We expect our description of terrace roughness will apply to many surfaces, even those without obvious terracing. △ Less

Submitted 1 June, 2017; originally announced June 2017.

Zero-field Edge Magnetoplasmons in a Magnetic Topological Insulator

Authors: A. C. Mahoney, J. I. Colless, L. Peeters, S. J. Pauka, E. J. Fox, X. Kou, Lei Pan, K. L. Wang, D. Goldhaber-Gordon, D. J. Reilly

Abstract: Incorporating ferromagnetic dopants, such as chromium or vanadium, into thin films of the three-dimensional (3D) topological insulator (TI) (Bi,Sb)2Te3 has recently led to the realisation of the quantum anomalous Hall effect (QAHE), a unique phase of quantum matter. These materials are of great interest, since they may support electrical currents that flow without resistance via edge channels, eve… ▽ More Incorporating ferromagnetic dopants, such as chromium or vanadium, into thin films of the three-dimensional (3D) topological insulator (TI) (Bi,Sb)2Te3 has recently led to the realisation of the quantum anomalous Hall effect (QAHE), a unique phase of quantum matter. These materials are of great interest, since they may support electrical currents that flow without resistance via edge channels, even at zero magnetic field. To date, the QAHE has been investigated using low-frequency transport measurements. However, transport requires contacting the sample and results can be difficult to interpret due to the presence of parallel conductive paths, via either the bulk or surface, or because additional non-chiral edge channels may exist. Here, we move beyond transport measurements by probing the microwave response of a magnetised disk of Cr-(Bi,Sb)2Te3. We identify features associated with chiral edge magnetoplasmons (EMPs), a signature that robust edge-channels are indeed intrinsic to this material system. Our results provide a measure of the velocity of edge excitations without contacting the sample, and pave the way for a new, on-chip circuit element of practical importance: the TI, zero-field microwave circulator. △ Less

Submitted 8 March, 2017; originally announced March 2017.

Interplay of chiral and helical states in a Quantum Spin Hall Insulator lateral junction

Authors: M. R. Calvo, F. de Juan, R. Ilan, E. J. Fox, A. J. Bestwick, M. Mühlbauer, J. Wang, C. Ames, P. Leubner, C. Brüne, S. C. Zhang, H. Buhmann, L. W. Molenkamp, D. Goldhaber-Gordon

Abstract: We study the electronic transport across an electrostatically-gated lateral junction in a HgTe quantum well, a canonical 2D topological insulator, with and without applied magnetic field. We control carrier density inside and outside a junction region independently and hence tune the number and nature of 1D edge modes propagating in each of those regions. Outside the 2D gap, magnetic field drives… ▽ More We study the electronic transport across an electrostatically-gated lateral junction in a HgTe quantum well, a canonical 2D topological insulator, with and without applied magnetic field. We control carrier density inside and outside a junction region independently and hence tune the number and nature of 1D edge modes propagating in each of those regions. Outside the 2D gap, magnetic field drives the system to the quantum Hall regime, and chiral states propagate at the edge. In this regime, we observe fractional plateaus which reflect the equilibration between 1D chiral modes across the junction. As carrier density approaches zero in the central region and at moderate fields, we observe oscillations in resistance that we attribute to Fabry-Perot interference in the helical states, enabled by the broken time reversal symmetry. At higher fields, those oscillations disappear, in agreement with the expected absence of helical states when band inversion is lifted. △ Less

Submitted 13 December, 2017; v1 submitted 27 February, 2017; originally announced February 2017.

Comments: 5 pages, 4 figures, supp. mat

Journal ref: Phys. Rev. Lett. 119, 226401 (2017)

Absorptive pinhole collimators for ballistic Dirac fermions in graphene

Authors: Arthur W. Barnard, Alex Hughes, Aaron L. Sharpe, Kenji Watanabe, Takashi Taniguchi, David Goldhaber-Gordon

Abstract: Ballistic electrons in solids can have mean free paths far larger than the smallest features patterned by lithography. This has allowed development and study of solid-state electron-optical devices such as beam splitters and quantum point contacts, which have informed our understanding of electron flow and interactions. Recently, high-mobility graphene has emerged as an ideal two-dimensional semim… ▽ More Ballistic electrons in solids can have mean free paths far larger than the smallest features patterned by lithography. This has allowed development and study of solid-state electron-optical devices such as beam splitters and quantum point contacts, which have informed our understanding of electron flow and interactions. Recently, high-mobility graphene has emerged as an ideal two-dimensional semimetal that hosts unique chiral electron-optical effects due to its honeycomb crystalline lattice. However, this chiral transport prevents simple use of electrostatic gates to define electron-optical devices in graphene. Here, we present a method of creating highly-collimated electron beams in graphene based on collinear pairs of slits, with absorptive sidewalls between the slits. By this method, we achieve beams with angular width 18 degrees or narrower, and transmission matching semiclassical predictions. △ Less

Submitted 17 November, 2016; v1 submitted 16 November, 2016; originally announced November 2016.

Comments: 24 pages, 9 figures

Mechanism for the Large Conductance Modulation in Electrolyte-gated Thin Gold Films

Authors: Trevor A Petach, Menyoung Lee, Ryan Davis, Apurva Mehta, David Goldhaber-Gordon

Abstract: Electrolyte gating using ionic liquid electrolytes has recently generated considerable interest as a method to achieve large carrier density modulations in a variety of materials. In noble metal thin films, electrolyte gating results in large changes in sheet resistance. The widely accepted mechanism for these changes is the formation of an electric double layer with a charged layer of ions in the… ▽ More Electrolyte gating using ionic liquid electrolytes has recently generated considerable interest as a method to achieve large carrier density modulations in a variety of materials. In noble metal thin films, electrolyte gating results in large changes in sheet resistance. The widely accepted mechanism for these changes is the formation of an electric double layer with a charged layer of ions in the liquid and accumulation or depletion of carriers in the thin film. We report here a different mechanism. In particular, we show using x-ray absorption near edge structure (XANES) that the previously reported large conductance modulation in gold films is due to reversible oxidation and reduction of the surface rather than the charging of an electric double layer. We show that the double layer capacitance accounts for less than 10\% of the observed change in transport properties. These results represent a significant step towards understanding the mechanisms involved in electrolyte gating. △ Less

Submitted 27 March, 2016; originally announced March 2016.

Voltage Controlled Interfacial Layering in an Ionic Liquid on SrTiO$_3$

Authors: Trevor A Petach, Apurva Mehta, Ronald Marks, Bart Johnson, Michael F Toney, David Goldhaber-Gordon

Abstract: One prominent structural feature of ionic liquids near surfaces is formation of alternating layers of anions and cations. However, how this layering responds to applied potential is poorly understood. We focus on the structure of 1-butyl-1-methylpyrrolidinium tris(pentafluoroethyl) trifluorophosphate (BMPY-FAP) near the surface of a strontium titanate (SrTiO$_3$) electric double-layer transistor.… ▽ More One prominent structural feature of ionic liquids near surfaces is formation of alternating layers of anions and cations. However, how this layering responds to applied potential is poorly understood. We focus on the structure of 1-butyl-1-methylpyrrolidinium tris(pentafluoroethyl) trifluorophosphate (BMPY-FAP) near the surface of a strontium titanate (SrTiO$_3$) electric double-layer transistor. Using x-ray reflectivity, we show that at positive bias, the individual layers in the ionic liquid double layer thicken and the layering persists further away from the interface. We model the reflectivity using a modified distorted crystal model with alternating cation and anion layers, which allows us to extract the charge density and the potential near the surface. We find that the charge density is strongly oscillatory with and without applied potential, and that with applied gate bias of 4.5 V the first two layers become significantly more cation rich than at zero bias, accumulating about $2.5 \times 10^{13}$ cm$^{-2}$ excess charge density. △ Less

Submitted 27 March, 2016; originally announced March 2016.