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A Long-term photometric variability and spectroscopic study of luminous blue variable AF And in M31
Authors:
Yogesh C. Joshi,
Kaushal Sharma,
Anjasha Gangopadhyay,
Rishikesh Gokhale,
Kuntal Misra
Abstract:
We present photometric and spectroscopic analysis of the Hubble Sandage variable AF And in M31. The data has been taken under the Nainital Microlensing Survey during 1998-2002 and follow-up observations were carried out until 2011. During this period, photometric observations in Cousins R and I bands were obtained for 169 nights spanning over about 5000 days. AF And has shown a prominent outburst…
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We present photometric and spectroscopic analysis of the Hubble Sandage variable AF And in M31. The data has been taken under the Nainital Microlensing Survey during 1998-2002 and follow-up observations were carried out until 2011. During this period, photometric observations in Cousins R and I bands were obtained for 169 nights spanning over about 5000 days. AF And has shown a prominent outburst around mid-January in 1999 followed by a gradual decrease in brightness of about 1.5 mag in the next 3 years with a declining rate of ~0.0015 mag/day leading to a quiescent phase at the end of 2001. After lying low for about 9 years, AF And again went through a secondary outburst phase in late 2010 with an amplitude of 0.44 mag where it lasted for one year before fading back to its quiescence phase. The spectroscopic observations of AF And show prominent Balmer and He I emission lines along with the comparatively weaker FeII and [FeII] emissions. Asymmetric emission line profiles in its spectrum imply the mass loss rate of about 2.2x10^{-4} solar mass per yr through the stellar winds in the photosphere. Using SED fitting, we find the photospheric temperature of 33,000+/-3000 K during the visual minimum. Using a weak P Cygni profile of HeI emission line, the wind terminal velocity for AF And is found to be around 280-300 km/s.
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Submitted 5 August, 2019;
originally announced August 2019.
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Wide bandwidth nanowire electromechanics on insulating substrates at room temperature
Authors:
T. S. Abhilash,
John P Mathew,
Shamashis Sengupta,
Mahesh R Gokhale,
Arnab Bhattacharya,
Mandar M. Deshmukh
Abstract:
We study InAs nanowire resonators fabricated on sapphire substrate with a local gate configuration. The key advantage of using an insulating sapphire substrate is that it results in a reduced parasitic capacitance thus allowing both wide bandwidth actuation and detection using a network analyzer as well as signal detection at room temperature. Both in-plane and out-of-plane vibrational modes of th…
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We study InAs nanowire resonators fabricated on sapphire substrate with a local gate configuration. The key advantage of using an insulating sapphire substrate is that it results in a reduced parasitic capacitance thus allowing both wide bandwidth actuation and detection using a network analyzer as well as signal detection at room temperature. Both in-plane and out-of-plane vibrational modes of the nanowire can be driven and the non-linear response of the resonators studied. In addition this technique enables the study of variation of thermal strains due to heating in nanostructures
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Submitted 6 January, 2016;
originally announced January 2016.
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Polarization sensitive solar-blind detector based on a-plane AlGaN
Authors:
Masihhur R. Laskar,
A. Arora,
A. P. Shah,
A. A. Rahman,
M. R. Gokhale,
Arnab Bhattacharya
Abstract:
We report polarization-sensitive solar-blind metal-semiconductor-metal UV photodetectors based on (11-20) a-plane AlGaN. The epilayer shows anisotropic optical properties confirmed by polarization-resolved transmission and photocurrent measurements, in good agreement with band structure calculations.
We report polarization-sensitive solar-blind metal-semiconductor-metal UV photodetectors based on (11-20) a-plane AlGaN. The epilayer shows anisotropic optical properties confirmed by polarization-resolved transmission and photocurrent measurements, in good agreement with band structure calculations.
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Submitted 21 June, 2011;
originally announced June 2011.
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Facile fabrication of lateral nanowire wrap-gate devices with improved performance
Authors:
Sajal Dhara,
Shamashis Sengupta,
Hari S. Solanki,
Arvind Maurya,
Arvind Pavan R.,
M. R. Gokhale,
Arnab Bhattacharya,
Mandar M. Deshmukh
Abstract:
We present a simple fabrication technique for lateral nanowire wrap-gate devices with high capacitive coupling and field-effect mobility. Our process uses e-beam lithography with a single resist-spinning step, and does not require chemical etching. We measure, in the temperature range 1.5-250 K, a subthreshold slope of 5-54 mV/decade and mobility of 2800-2500 $cm^2/Vs$ -- significantly larger than…
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We present a simple fabrication technique for lateral nanowire wrap-gate devices with high capacitive coupling and field-effect mobility. Our process uses e-beam lithography with a single resist-spinning step, and does not require chemical etching. We measure, in the temperature range 1.5-250 K, a subthreshold slope of 5-54 mV/decade and mobility of 2800-2500 $cm^2/Vs$ -- significantly larger than previously reported lateral wrap-gate devices. At depletion, the barrier height due to the gated region is proportional to applied wrap-gate voltage.
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Submitted 4 June, 2011;
originally announced June 2011.
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Distorted wurtzite unit cells: Determination of lattice parameters of non-polar a-plane AlGaN and estimation of solid phase Al content
Authors:
Masihhur R. Laskar,
Tapas Ganguli,
A. A. Rahman,
Amlan Mukherjee,
M. R. Gokhale,
Arnab Bhattacharya
Abstract:
Unlike c-plane nitrides, ``non-polar" nitrides grown in e.g. the a-plane or m-plane orientation encounter anisotropic in-plane strain due to the anisotropy in the lattice and thermal mismatch with the substrate or buffer layer. Such anisotropic strain results in a distortion of the wurtzite unit cell and creates difficulty in accurate determination of lattice parameters and solid phase group-III c…
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Unlike c-plane nitrides, ``non-polar" nitrides grown in e.g. the a-plane or m-plane orientation encounter anisotropic in-plane strain due to the anisotropy in the lattice and thermal mismatch with the substrate or buffer layer. Such anisotropic strain results in a distortion of the wurtzite unit cell and creates difficulty in accurate determination of lattice parameters and solid phase group-III content (x_solid) in ternary alloys. In this paper we show that the lattice distortion is orthorhombic, and outline a relatively simple procedure for measurement of lattice parameters of non-polar group III-nitrides epilayers from high resolution x-ray diffraction measurements. We derive an approximate expression for x_solid taking into account the anisotropic strain. We illustrate this using data for a-plane AlGaN, where we measure the lattice parameters and estimate the solid phase Al content, and also show that this method is applicable for m-plane structures as well.
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Submitted 22 June, 2010;
originally announced June 2010.
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Anisotropic structural and optical properties of a-plane (11-20) AlInN nearly-lattice-matched to GaN
Authors:
Masihhur R. Laskar,
Abdul Kadir,
A. A. Rahman,
A. P. Shah,
Nirupam Hatui,
M. R. Gokhale,
Arnab Bhattacharya
Abstract:
We report epitaxial growth of a-plane (11-20) AlInN layers nearly-lattice-matched to GaN. Unlike for c-plane oriented epilayers, a-plane Al_{1-x}In_{x}N cannot be simultaneously lattice-matched to GaN in both in-plane directions. We study the influence of temperature on indium incorporation and obtain nearly-lattice-matched Al_{0.81}In_{0.19}N at a growth temperature of 760^{o}C. We outline a proc…
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We report epitaxial growth of a-plane (11-20) AlInN layers nearly-lattice-matched to GaN. Unlike for c-plane oriented epilayers, a-plane Al_{1-x}In_{x}N cannot be simultaneously lattice-matched to GaN in both in-plane directions. We study the influence of temperature on indium incorporation and obtain nearly-lattice-matched Al_{0.81}In_{0.19}N at a growth temperature of 760^{o}C. We outline a procedure to check in-plane lattice mismatch using high resolution x-ray diffraction, and evaluate the strain and critical thickness. Polarization-resolved optical transmission measurements of the Al_{0.81}In_{0.19}N epilayer reveal a difference in bandgap of ~140 meV between (electric field) E_parallel_c [0001]-axis and E_perpendicular_c conditions with room-temperature photoluminescence peaked at 3.38 eV strongly polarized with E_parallel_c, in good agreement with strain-dependent band-structure calculations.
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Submitted 21 June, 2011; v1 submitted 23 March, 2010;
originally announced March 2010.
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Non-intrinsic superconductivity in InN epilayers: role of Indium Oxide
Authors:
Abdul Kadir,
Sourin Mukhopadhyay,
Tapas Ganguli,
Charudatta Galande,
M. R. Gokhale,
B. M. Arora,
Pratap Raychaudhuri,
Arnab Bhattacharya
Abstract:
In recent years there have been reports of anomalous electrical resistivity and the presence of superconductivity in semiconducting InN layers. By a careful correlation of the temperature dependence of resistivity and magnetic susceptibility with structural information from highresolution x-ray diffraction measurements we show that superconductivity is not intrinsic to InN and is seen only in sa…
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In recent years there have been reports of anomalous electrical resistivity and the presence of superconductivity in semiconducting InN layers. By a careful correlation of the temperature dependence of resistivity and magnetic susceptibility with structural information from highresolution x-ray diffraction measurements we show that superconductivity is not intrinsic to InN and is seen only in samples that show traces of oxygen impurity. We hence believe that InN is not intrinsically a superconducting semiconductor.
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Submitted 14 February, 2008;
originally announced February 2008.
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Determination of InN-GaN heterostructure band offsets from internal photoemission measurements
Authors:
Zahid Hasan Mahmood,
A. P. Shah,
Abdul Kadir,
M. R. Gokhale,
Sandip Ghosh,
Arnab Bhattacharya,
B. M. Arora
Abstract:
Band discontinuities at the InN-GaN heterointerface are experimentally determined from internal photoemission spectroscopy measurements on n+ InN on GaN epilayers. The photocurrent shows two threshold energies, one at 1.624 eV and the other at 2.527 eV. From these we obtain the valence band offset 0.85 eV and the conduction band offset 1.82 eV.
Band discontinuities at the InN-GaN heterointerface are experimentally determined from internal photoemission spectroscopy measurements on n+ InN on GaN epilayers. The photocurrent shows two threshold energies, one at 1.624 eV and the other at 2.527 eV. From these we obtain the valence band offset 0.85 eV and the conduction band offset 1.82 eV.
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Submitted 5 June, 2007;
originally announced June 2007.
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The role of hydrostatic stress in determining the bandgap of InN epilayers
Authors:
Abdul Kadir,
Tapas Ganguli,
Ravi Kumar,
M. R. Gokhale,
A. P. Shah,
Sandip Ghosh,
B. M. Arora,
Arnab Bhattacharya
Abstract:
We establish a correlation between the internal stress in InN epilayers and their optical properties such as the measured absorption band edge and photoluminescence emission wavelength. By a careful evaluation of the lattice constants of InN epilayers grown on c-plane sapphire substrates under various conditions by metalorganic vapor phase epitaxy we find that the films are under primarily hydro…
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We establish a correlation between the internal stress in InN epilayers and their optical properties such as the measured absorption band edge and photoluminescence emission wavelength. By a careful evaluation of the lattice constants of InN epilayers grown on c-plane sapphire substrates under various conditions by metalorganic vapor phase epitaxy we find that the films are under primarily hydrostatic stress. This results in a shift in the band edge to higher energy. The effect is significant, and may be responsible for some of the variations in InN bandgap reported in the literature.
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Submitted 19 May, 2007;
originally announced May 2007.
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Influence of growth parameters on structural properties and bandgap of InN epilayers deposited in a showerhead MOVPE system
Authors:
Abdul Kadir,
Tapas Ganguli,
Ravi Kumar,
M. R. Gokhale,
A. P. Shah,
B. M. Arora,
Arnab Bhattacharya
Abstract:
From a detailed analysis of InN epilayers deposited in a close-coupled showerhead metalorganic vapour phase epitaxy (MOVPE) system under various conditions we investigate the effect of growth parameters on the lattice constants of the InN layer. The layers are under significant internal hydrostatic stress which influences the optical properties. Samples typically fall into two broad categories o…
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From a detailed analysis of InN epilayers deposited in a close-coupled showerhead metalorganic vapour phase epitaxy (MOVPE) system under various conditions we investigate the effect of growth parameters on the lattice constants of the InN layer. The layers are under significant internal hydrostatic stress which influences the optical properties. Samples typically fall into two broad categories of stress, with resultant luminescence emission around 0.8eV and 1.1eV. We can correlate the internal stress in the layer and the value of the optical absorption edge, and the PL emission wavelength.
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Submitted 1 May, 2007;
originally announced May 2007.
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Growth kinetics effects on self-assembled InAs/InP quantum dots
Authors:
Bhavtosh Bansal,
M. R. Gokhale,
Arnab Bhattacharya,
B. M. Arora
Abstract:
A systematic manipulation of the morphology and the optical emission properties of MOVPE grown ensembles of InAs/InP quantum dots is demonstrated by changing the growth kinetics parameters. Under non-equilibrium conditions of a comparatively higher growth rate and low growth temperature, the quantum dot density, their average size and hence the peak emission wavelength can be tuned by changing e…
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A systematic manipulation of the morphology and the optical emission properties of MOVPE grown ensembles of InAs/InP quantum dots is demonstrated by changing the growth kinetics parameters. Under non-equilibrium conditions of a comparatively higher growth rate and low growth temperature, the quantum dot density, their average size and hence the peak emission wavelength can be tuned by changing efficiency of the surface diffusion (determined by the growth temperature) relative to the growth flux. We further observe that the distribution of quantum dot heights, for samples grown under varying conditions, if normalized to the mean height, can be nearly collapsed onto a single Gaussian curve.
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Submitted 24 June, 2005;
originally announced June 2005.
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Another origin of bimodal size distribution in InAs self-assembled quantum dots
Authors:
Bhavtosh Bansal,
M. R. Gokhale,
Arnab Bhattacharya,
B. M. Arora
Abstract:
The evolution of InAs quantum dots grown on InP substrates by metal-organic vapour phase epitaxy is studied as a function of InAs coverage. Under specific growth conditions, the onset of the two- to three-dimensional transition is seen to proceed via two distinct pathways: through (i) an abrupt appearance of quantum dots as expected in the usual Stranski-Krastanov growth picture and (ii) a conti…
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The evolution of InAs quantum dots grown on InP substrates by metal-organic vapour phase epitaxy is studied as a function of InAs coverage. Under specific growth conditions, the onset of the two- to three-dimensional transition is seen to proceed via two distinct pathways: through (i) an abrupt appearance of quantum dots as expected in the usual Stranski-Krastanov growth picture and (ii) a continuous evolution of small surface features into well developed quantum dots. The average size of the features in both these families increases with coverage, leading to a bimodal distribution in dot sizes at an intermediate stage of growth evolution that eventually becomes a unimodal distribution as more material is deposited. Complementary information obtained from independent measurements of photoluminescence spectra and surface morphology is correlated and is found to be consistent with the picture of growth proposed.
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Submitted 11 May, 2005;
originally announced May 2005.
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The effects of macroscopic inhomogeneities on the magneto transport properties of the electron gas in two dimensions
Authors:
B. Karmakar,
M. R. Gokhale,
A. P. Shah,
B. M. Arora,
D. T. N. de Lang,
A. de Visser,
L. A. Ponomarenko,
A. M. M. Pruisken
Abstract:
In experiments on electron transport the macroscopic inhomogeneities in the sample play a fundamental role. In this paper and a subsequent one we introduce and develop a general formalism that captures the principal features of sample inhomogeneities (density gradients, contact misalignments) in the magneto resistance data taken from low mobility heterostructures. We present detailed assessments…
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In experiments on electron transport the macroscopic inhomogeneities in the sample play a fundamental role. In this paper and a subsequent one we introduce and develop a general formalism that captures the principal features of sample inhomogeneities (density gradients, contact misalignments) in the magneto resistance data taken from low mobility heterostructures. We present detailed assessments and experimental investigations of the different regimes of physical interest, notably the regime of semiclassical transport at weak magnetic fields, the plateau-plateau transitions as well as the plateau-insulator transition that generally occurs at much stronger values of the external field only.
It is shown that the semiclassical regime at weak fields plays an integral role in the general understanding of the experiments on the quantum Hall regime. The results of this paper clearly indicate that the plateau-plateau transitions, unlike the the plateau-insulator transition, are fundamentally affected by the presence of sample inhomogeneities. We propose a universal scaling result for the magneto resistance parameters. This result facilitates, amongst many other things, a detailed understanding of the difficulties associated with the experimental methodology of H.P. Wei et.al in extracting the quantum critical behavior of the electron gas from the transport measurements conducted on the plateau-plateau transitions.
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Submitted 30 September, 2003;
originally announced September 2003.
