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Tuning carrier concentration in a superacid treated MoS$_2$ monolayer
Authors:
Maciej R. Molas,
Katarzyna Gołasa,
Łukasz Bala,
Karol Nogajewski,
Miroslav Bartos,
Marek Potemski,
Adam Babiński
Abstract:
The effect of bis(trifluoromethane) sulfonimide (TFSI, superacid) treatment on the optical properties of MoS$_2$ monolayers is investigated by means of photoluminescence, reflectance contrast and Raman scattering spectroscopy employed in a broad temperature range. It is shown that when applied multiple times, the treatment results in progressive quenching of the trion emission/absorption and in th…
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The effect of bis(trifluoromethane) sulfonimide (TFSI, superacid) treatment on the optical properties of MoS$_2$ monolayers is investigated by means of photoluminescence, reflectance contrast and Raman scattering spectroscopy employed in a broad temperature range. It is shown that when applied multiple times, the treatment results in progressive quenching of the trion emission/absorption and in the redshift of the neutral exciton emission/absorption associated with both the A and B excitonic resonances. Based on this evolution, a trion complex related to the B exciton in monolayer MoS$_2$ is unambiguously identified. A defect-related emission observed at low temperatures also disappears from the spectrum as a result of the treatment. Our observations are attributed to effective passivation of defects on the MoS$_{2}$ monolayer surface. The passivation reduces the carrier density, which in turn affects the out-of-plane electric field in the sample. The observed tuning of the carrier concentration strongly influences also the Raman scattering in the MoS$_2$ monolayer. An enhancement of Raman scattering at resonant excitation in the vicinity of the A neutral exciton is clearly seen for both the out-of-plane A$_1^{'}$ and in-plane E$^{'}$ modes. On the contrary, when the excitation is in resonance with a corresponding trion, the Raman scattering features become hardly visible. These results confirm the role of the excitonic charge state plays in the resonance effect of the excitation energy on the Raman scattering in transition metal dichalcogenides.
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Submitted 30 November, 2018; v1 submitted 22 September, 2018;
originally announced September 2018.
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Raman scattering from the bulk inactive out-of-plane B$^{1}_{2\text{g}}$ mode in few-layer MoTe$_{2}$
Authors:
M. Grzeszczyk,
K. Gołasa,
M. R. Molas,
K. Nogajewski,
M. Zinkiewicz,
M. Potemski,
A. Wysmołek,
A. Babiński
Abstract:
Raman scattering from the out-of-plane vibrational modes (A$_{1\text{g}}$/A'$_{1}$), which originate from the bulk-inactive out-of-plane B$^{1}_{2\text{g}}$ mode, are studied in few-layer MoTe$_{2}$. Temperature-dependent measurements reveal a doublet structure of the corresponding peaks in the Raman scattering spectra of tetralayer and pentalayer samples. A strong enhancement of their lower energ…
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Raman scattering from the out-of-plane vibrational modes (A$_{1\text{g}}$/A'$_{1}$), which originate from the bulk-inactive out-of-plane B$^{1}_{2\text{g}}$ mode, are studied in few-layer MoTe$_{2}$. Temperature-dependent measurements reveal a doublet structure of the corresponding peaks in the Raman scattering spectra of tetralayer and pentalayer samples. A strong enhancement of their lower energy components is recorded at low temperature for 1.91 eV and 1.96 eV laser excitation. We discuss the attribution of the peaks to the inner modes of the respective Raman-active vibrations. The temperature evolution of their intensity strongly suggests a resonant character of the employed excitation, which leads to the mode enhancement at low temperature. The resonance of the laser light with the singularity of the electronic density of states at the $M$ point of the Brillouin zone in MoTe$_{2}$ is proposed to be responsible for the observed effects.
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Submitted 7 August, 2018;
originally announced August 2018.
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Resonant quenching of Raman scattering due to out-of-plane A$_{1g}$/A'$_1$ modes in few-layer MoTe$_2$
Authors:
K. Gołasa,
M. Grzeszczyk,
M. R. Molas,
M. Zinkiewicz,
Ł. Bala,
K. Nogajewski,
M. Potemski,
A. Wysmołek,
A. Babiński
Abstract:
Temperature-dependent (5 K to 300 K) Raman scattering study of A$_{1g}$/A'$_1$ phonon modes in mono-layer (1L), bilayer (2L), trilayer (3L), and tetralayer (4L) MoTe$_2$ is reported. The temperature evolution of the modes' intensity critically depends on the flake thickness. In particular with $λ$=632.8 nm light excitation, a strongly non-monotonic dependence of the A$_{1g}$ mode intensity is obse…
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Temperature-dependent (5 K to 300 K) Raman scattering study of A$_{1g}$/A'$_1$ phonon modes in mono-layer (1L), bilayer (2L), trilayer (3L), and tetralayer (4L) MoTe$_2$ is reported. The temperature evolution of the modes' intensity critically depends on the flake thickness. In particular with $λ$=632.8 nm light excitation, a strongly non-monotonic dependence of the A$_{1g}$ mode intensity is observed in 2L MoTe$_2$. The intensity decreases with decreasing temperature down to 220 K and the A$_{1g}$ mode almost completely vanishes from the Stokes scattering spectrum in the temperature range between 160 K and 220 K. The peak recovers at lower temperatures and at T=5 K it becomes three times more intense that at room temperature. Similar non-monotonic intensity evolution is observed for the out-of-plane mode in 3L MoTe$_2$ in which tellurium atoms in all three layers vibrate in-phase. The intensity of the other out-of-plane Raman-active mode, (with vibrations of tellurium atoms in the central layer shifted by 180$^o$ with respect to the vibrations in outer layers), only weakly depends on temperature. The observed quenching of the Raman scattering in 2L and 3L MoTe$_2$ is attributed to a destructive interference between the resonant and non-resonant contributions to the Raman scattering amplitude. The observed "antiresonance" is related to the electronic excitation at the M point of the Brillouin zone in few-layer MoTe$_2$.
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Submitted 24 November, 2016; v1 submitted 14 August, 2016;
originally announced August 2016.
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Raman scattering in few-layer MoTe$_{2}$
Authors:
M. Grzeszczyk,
K. Gołasa,
M. Zinkiewicz,
K. Nogajewski,
M. R. Molas,
M. Potemski,
A. Wysmołek,
A. Babiński
Abstract:
We report on room-temperature Raman scattering measurements in few-layer crystals of exfoliated molybdenum ditelluride (MoTe$_{2}$) performed with the use of 632.8 nm (1.96 eV) laser light excitation. In agreement with recent study reported by G. Froehlicher et al, (2015 $Nano$ $Lett.$ 15 6481) we observe a complex structure of the out-of-plane vibrational modes (A$_{1g}$/A$^{'}_{1}$), which can b…
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We report on room-temperature Raman scattering measurements in few-layer crystals of exfoliated molybdenum ditelluride (MoTe$_{2}$) performed with the use of 632.8 nm (1.96 eV) laser light excitation. In agreement with recent study reported by G. Froehlicher et al, (2015 $Nano$ $Lett.$ 15 6481) we observe a complex structure of the out-of-plane vibrational modes (A$_{1g}$/A$^{'}_{1}$), which can be explained in terms of interlayer interactions between single atomic planes of MoTe$_{2}$. In the case of low-energy shear and breathing modes of rigid interlayer vibrations it is shown that their energy evolution with the number of layers can be well reproduced within a linear chain model with only the nearest neighbor interaction taken into account. Based on this model the corresponding in-plane and out-of-plane force constants are determined. We also show that the Raman scattering in MoTe$_{2}$ measured using 514.5 nm (2.41 eV) laser light excitation results in much simpler spectra. We argue that the rich structure of the out-of-plane vibrational modes observed in Raman scattering spectra excited with the use of 632.8 nm laser light results from its resonance with the electronic transition at the M or K points of the MoTe$_{2}$ first Brillouin zone.
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Submitted 15 April, 2016; v1 submitted 23 November, 2015;
originally announced November 2015.
