Showing 1–14 of 14 results for author: Giridharagopal, R

Deposition-Dependent Coverage and Performance of Phosphonic Acid Interface Modifiers in Halide Perovskite Optoelectronics

Authors: Hannah Contreras, Aidan O'Brien, Margherita Taddei, Yangwei Shi, Fangyuan Jiang, Robert J. E. Westbrook, Yadong Zhang, Rajiv Giridharagopal, Paul A. Lee, Stephen Barlow, Seth R. Marder, Neal R. Armstrong, David S. Ginger

Abstract: In this work, we study the effect of various deposition methods for phosphonic acid interface modifiers commonly pursued as self-assembled monolayers in high-performance metal halide perovskite photovoltaics and light-emitting diodes. We compare the deposition of (2-(3,6-diiodo-9H-carbazol-9-yl)ethyl)phosphonic acid onto indium tin oxide (ITO) bottom contacts by varying three parameters: the metho… ▽ More In this work, we study the effect of various deposition methods for phosphonic acid interface modifiers commonly pursued as self-assembled monolayers in high-performance metal halide perovskite photovoltaics and light-emitting diodes. We compare the deposition of (2-(3,6-diiodo-9H-carbazol-9-yl)ethyl)phosphonic acid onto indium tin oxide (ITO) bottom contacts by varying three parameters: the method of deposition, specifically spin coating or prolonged dip coating, ITO surface treatment via HCl/FeCl3 etching, and use in combination with a second modifier, 1,6-hexylenediphosphonic acid. We demonstrate that varying these modification protocols can impact time-resolved photoluminescence carrier lifetimes and quasi-Fermi level splitting of perovskite films deposited onto the phosphonic-acid-modified ITO. Ultraviolet photoelectron spectroscopy shows an increase in effective work function after phosphonic acid modification and clear evidence for photoemission from carbazole functional groups at the ITO surface. We use X-ray photoelectron spectroscopy to probe differences in phosphonic acid coverage on the metal oxide contact and show that perovskite samples grown on ITO with the highest phosphonic acid coverage exhibit the longest carrier lifetimes. Finally, we establish that device performance follows these same trends. These results indicate that the reactivity, heterogeneity, and composition of the bottom contact help to control recombination rates and therefore power conversion efficiencies. ITO etching, prolonged deposition times for phosphonic acids via dip coating, and the use of a secondary, more hydrophilic bis-phosphonic acid, all contribute to improvements in surface coverage, carrier lifetime, and device efficiency. These improvements each have a positive impact, and we achieve the best results when all three strategies are implemented. △ Less

Submitted 23 June, 2025; originally announced June 2025.

Multi-Output Convolutional Neural Network for Improved Parameter Extraction in Time-Resolved Electrostatic Force Microscopy Data

Authors: Madeleine D. Breshears, Rajiv Giridharagopal, David S. Ginger

Abstract: Time-resolved scanning probe microscopy methods, like time-resolved electrostatic force microscopy (trEFM), enable imaging of dynamic processes ranging from ion motion in batteries to electronic dynamics in microstructured thin film semiconductors for solar cells. Reconstructing the underlying physical dynamics from these techniques can be challenging due to the interplay of cantilever physics wit… ▽ More Time-resolved scanning probe microscopy methods, like time-resolved electrostatic force microscopy (trEFM), enable imaging of dynamic processes ranging from ion motion in batteries to electronic dynamics in microstructured thin film semiconductors for solar cells. Reconstructing the underlying physical dynamics from these techniques can be challenging due to the interplay of cantilever physics with the actual transient kinetics of interest in the resulting signal. Previously, quantitative trEFM used empirical calibration of the cantilever or feed-forward neural networks trained on simulated data to extract the physical dynamics of interest. Both these approaches are limited by interpreting the underlying signal as a single exponential function, which serves as an approximation but does not adequately reflect many realistic systems. Here, we present a multi-branched, multi-output convolutional neural network (CNN) that uses the trEFM signal in addition to the physical cantilever parameters as input. The trained CNN accurately extracts parameters describing both single-exponential and bi-exponential underlying functions, and more accurately reconstructs real experimental data in the presence of noise. This work demonstrates an application of physics-informed machine learning to complex signal processing tasks, enabling more efficient and accurate analysis of trEFM. △ Less

Submitted 5 February, 2025; originally announced February 2025.

Comments: 5 figures with Supporting Information attached

Sub-diffraction Imaging of Carrier Dynamics in Halide Perovskite Semiconductors: Effects of Passivation, Morphology, and Ion Motion

Authors: Madeleine D. Breshears, Justin Pothoof, Rajiv Giridharagopal, David S. Ginger

Abstract: We spatially resolve photocarrier dynamics in halide perovskites using time-resolved electrostatic force microscopy (trEFM) to map surface potential equilibration during photoexcitation. Following treatment with different surface passivation agents, we show that trEFM probes dynamics directly related to surface recombination velocity and carrier lifetimes correlated with time-resolved photolumines… ▽ More We spatially resolve photocarrier dynamics in halide perovskites using time-resolved electrostatic force microscopy (trEFM) to map surface potential equilibration during photoexcitation. Following treatment with different surface passivation agents, we show that trEFM probes dynamics directly related to surface recombination velocity and carrier lifetimes correlated with time-resolved photoluminescence. Our results reveal nanoscale variations in recombination dynamics following surface passivation. We also observe heterogeneity in surface potential equilibration times dependent on perovskite film morphology. We combine wavelength- and intensity-dependent measurements with drift-diffusion simulations to disentangle the influence of carrier recombination and ion migration on surface potential equilibration. These results demonstrate that we can use mechanical detection to image electronic carrier recombination dynamics in perovskites below the optical diffraction limit while also showing the potential for future improvements in heterogeneity of surface passivation. △ Less

Submitted 5 December, 2024; originally announced December 2024.

Comments: 19 pages, 5 figures, Supplementary Information attached

Optical tuning of the diamond Fermi level measured by correlated scanning probe microscopy and quantum defect spectroscopy

Authors: Christian Pederson, Rajiv Giridharagopal, Fang Zhao, Scott T. Dunham, Yevgeny Raitses, David S. Ginger, Kai-Mei C. Fu

Abstract: Quantum technologies based on quantum point defects in crystals require control over the defect charge state. Here we tune the charge state of shallow nitrogen-vacancy and silicon-vacancy centers by locally oxidizing a hydrogenated surface with moderate optical excitation and simultaneous spectral monitoring. The loss of conductivity and change in work function due to oxidation are measured in atm… ▽ More Quantum technologies based on quantum point defects in crystals require control over the defect charge state. Here we tune the charge state of shallow nitrogen-vacancy and silicon-vacancy centers by locally oxidizing a hydrogenated surface with moderate optical excitation and simultaneous spectral monitoring. The loss of conductivity and change in work function due to oxidation are measured in atmosphere using conductive atomic force microscopy (C-AFM) and Kelvin probe force microscopy (KPFM). We correlate these scanning probe measurements with optical spectroscopy of the nitrogen-vacancy and silicon-vacancy centers created via implantation and annealing 15-25 nm beneath the diamond surface. The observed charge state of the defects as a function of optical exposure demonstrates that laser oxidation provides a way to precisely tune the Fermi level over a range of at least 2.00 eV. We also observe a significantly larger oxidation rate for implanted surfaces compared to unimplanted surfaces under ambient conditions. Combined with knowledge of the electron affinity of a surface, these results suggest KPFM is a powerful, high-spatial resolution technique to advance surface Fermi level engineering for charge stabilization of quantum defects. △ Less

Submitted 27 September, 2023; originally announced September 2023.

Kinetic Suppression of Photoinduced Halide Migration in Wide Bandgap Perovskites via Surface Passivation

Authors: Farhad Akrami, Fangyuan Jiang, Rajiv Giridharagopal, David S. Ginger

Abstract: In this work, we study the kinetics of photoinduced halide migration in FA$_{0.8}$Cs$_{0.2}$Pb(I$_{0.8}$Br$_{0.2}$)$_3$ wide (~1.69 eV) bandgap perovskites and show halide migration slows down following surface passivation with (3-aminopropyl) trimethoxysilane (APTMS). We use scanning Kelvin probe microscopy (SKPM) to probe the contact potential difference (CPD) shift under illumination, and the k… ▽ More In this work, we study the kinetics of photoinduced halide migration in FA$_{0.8}$Cs$_{0.2}$Pb(I$_{0.8}$Br$_{0.2}$)$_3$ wide (~1.69 eV) bandgap perovskites and show halide migration slows down following surface passivation with (3-aminopropyl) trimethoxysilane (APTMS). We use scanning Kelvin probe microscopy (SKPM) to probe the contact potential difference (CPD) shift under illumination, and the kinetics of surface potential relaxation in the dark. Our results show APTMS-passivated perovskites exhibit a smaller CPD shift under illumination, and a slower surface potential relaxation in the dark. We compare the evolution of the photoluminescence spectra of APTMS-passivated and unpassivated perovskites under illumination. We find that APTMS-passivated perovskites exhibit more than 5 times slower photoluminescence redshift, consistent with the slower surface potential relaxation as observed by SKPM. These observations provide evidence for kinetic suppression of photoinduced halide migration in APTMS-passivated samples, likely due to reduced halide vacancy densities, opening avenues to more efficient and stable devices. △ Less

Submitted 11 September, 2023; originally announced September 2023.

Surface Passivation Suppresses Local Ion Motion in Halide Perovskites

Authors: Justin Pothoof, Robert J. E. Westbrook, Rajiv Giridharagopal, Madeleine D. Breshears, David S. Ginger

Abstract: We use scanning probe microscopy to study ion migration in the formamidinium (FA)-containing halide perovskite semiconductor $Cs_{0.22}FA_{0.78}Pb(I_{0.85}Br_{0.15})_3$ in the presence and absence of chemical surface passivation. We measure the evolving contact potential difference (CPD) using scanning Kelvin probe microscopy (SKPM) following voltage poling. We find that ion migration leads to a ~… ▽ More We use scanning probe microscopy to study ion migration in the formamidinium (FA)-containing halide perovskite semiconductor $Cs_{0.22}FA_{0.78}Pb(I_{0.85}Br_{0.15})_3$ in the presence and absence of chemical surface passivation. We measure the evolving contact potential difference (CPD) using scanning Kelvin probe microscopy (SKPM) following voltage poling. We find that ion migration leads to a ~100 mV shift in the CPD of control films after poling with 3V for only a few seconds. Moreover, we find that ion migration is heterogeneous, with domain interfaces leading to a larger shift in the CPD. Application of (3-aminopropyl)trimethoxysilane (APTMS) as a surface passivator further leads to 5-fold reduction in the CPD shift from ~100 meV to ~20 meV. We use hyperspectral microscopy to show that APTMS-treated perovskite films undergo less photoinduced halide migration than control films. We interpret these results as due to a reduction in halide vacancy concentration due to passivation with APTMS. △ Less

Submitted 11 April, 2023; originally announced April 2023.

Comments: 14 pages, 5 figures

Hydration of a side-chain-free n-type semiconducting ladder polymer driven by electrochemical doping

Authors: Jiajie Guo, Lucas Q. Flagg, Duyen K. Tran, Shinya E. Chen, Ruipeng Li, Nagesh B. Kolhe, Rajiv Giridharagopal, Samson A. Jenekhe, Lee J. Richter, David S. Ginger

Abstract: We study the organic electrochemical transistors (OECTs) performance of the ladder polymer, poly(benzimidazobenzophenanthroline) (BBL) in an attempt to better understand how an apparently hydrophobic side-chain-free polymer is able to operate as an OECT with favorable redox kinetics in an aqueous environment. We examine two BBLs of different molecular masses from different sources. Both BBLs show… ▽ More We study the organic electrochemical transistors (OECTs) performance of the ladder polymer, poly(benzimidazobenzophenanthroline) (BBL) in an attempt to better understand how an apparently hydrophobic side-chain-free polymer is able to operate as an OECT with favorable redox kinetics in an aqueous environment. We examine two BBLs of different molecular masses from different sources. Both BBLs show significant film swelling during the initial reduction step. By combining electrochemical quartz crystal microbalance (eQCM) gravimetry, in-operando atomic force microscopy (AFM), and both ex-situ and in-operando grazing incidence wide-angle x-ray scattering (GIWAXS), we provide a detailed structural picture of the electrochemical charge injection process in BBL in the absence of any hydrophilic side-chains. Compared with ex-situ measurements, in-operando GIWAXS shows both more swelling upon electrochemical doping than has previously been recognized, and less contraction upon dedoping. The data show that BBL films undergo an irreversible hydration driven by the initial electrochemical doping cycle with significant water retention and lamellar expansion that persists across subsequent oxidation/reduction cycles. This swelling creates a hydrophilic environment that facilitates the subsequent fast hydrated ion transport in the absence of the hydrophilic side-chains used in many other polymer systems. Due to its rigid ladder backbone and absence of hydrophilic side-chains, the primary BBL water uptake does not significantly degrade the crystalline order, and the original dehydrated, unswelled state can be recovered after drying. The combination of doping induced hydrophilicity and robust crystalline order leads to efficient ionic transport and good stability. △ Less

Submitted 2 November, 2022; originally announced November 2022.

Comments: 24 pages, 5 figures

(3-Aminopropyl)trimethoxysilane Surface Passivation Improves Perovskite Solar Cell Performance by Reducing Surface Recombination Velocity

Authors: Yangwei Shi, Esteban Rojas-Gatjens, Jian Wang, Justin Pothoof, Rajiv Giridharagopal, Kevin Ho, Fangyuan Jiang, Margherita Taddei, Zhaoqing Yang, Carlos Silva-Acuña, David S. Ginger

Abstract: We demonstrate reduced surface recombination velocity (SRV) and enhanced power-conversion efficiency (PCE) in mixed-cation mixed-halide perovskite solar cells by using (3-aminopropyl)trimethoxysilane (APTMS) as a surface passivator. We show the APTMS serves to passivate defects at the perovskite surface, while also decoupling the perovskite from detrimental interactions at the C60 interface. We me… ▽ More We demonstrate reduced surface recombination velocity (SRV) and enhanced power-conversion efficiency (PCE) in mixed-cation mixed-halide perovskite solar cells by using (3-aminopropyl)trimethoxysilane (APTMS) as a surface passivator. We show the APTMS serves to passivate defects at the perovskite surface, while also decoupling the perovskite from detrimental interactions at the C60 interface. We measure a SRV of ~125 + 14 cm/s, and a concomitant increase of ~100 meV in quasi-Fermi level splitting in passivated devices compared to the controls. We use time-resolved photoluminescence and excitation-correlation photoluminescence spectroscopy to show that APTMS passivation effectively suppresses non-radiative recombination. We show that APTMS improves both the fill factor and open-circuit voltage (VOC), increasing VOC from 1.03 V for control devices to 1.09 V for APTMS-passivated devices, which leads to PCE increasing from 15.90% to 18.03%. We attribute enhanced performance to reduced defect density or suppressed nonradiative recombination and low SRV at the perovskite/transporting layers interface. △ Less

Submitted 29 September, 2022; originally announced September 2022.

Comments: 22 pages, 6 figures

Extraction of instantaneous frequencies and amplitudes in nonstationary time-series data

Authors: Daniel E. Shea, Rajiv Giridharagopal, David S. Ginger, Steven L. Brunton, J. Nathan Kutz

Abstract: Time-series analysis is critical for a diversity of applications in science and engineering. By leveraging the strengths of modern gradient descent algorithms, the Fourier transform, multi-resolution analysis, and Bayesian spectral analysis, we propose a data-driven approach to time-frequency analysis that circumvents many of the shortcomings of classic approaches, including the extraction of nons… ▽ More Time-series analysis is critical for a diversity of applications in science and engineering. By leveraging the strengths of modern gradient descent algorithms, the Fourier transform, multi-resolution analysis, and Bayesian spectral analysis, we propose a data-driven approach to time-frequency analysis that circumvents many of the shortcomings of classic approaches, including the extraction of nonstationary signals with discontinuities in their behavior. The method introduced is equivalent to a {\em nonstationary Fourier mode decomposition} (NFMD) for nonstationary and nonlinear temporal signals, allowing for the accurate identification of instantaneous frequencies and their amplitudes. The method is demonstrated on a diversity of time-series data, including on data from cantilever-based electrostatic force microscopy to quantify the time-dependent evolution of charging dynamics at the nanoscale. △ Less

Submitted 2 April, 2021; originally announced April 2021.

Journal ref: IEEE Access, vol. 9, pp. 83453-83466, 2021

Imaging graphene moiré superlattices via scanning Kelvin probe microscopy

Authors: Junxi Yu, Rajiv Giridharagopal, Yuhao Li, Kaichen Xie, Jiangyu Li, Ting Cao, Xiaodong Xu, David S. Ginger

Abstract: Moiré superlattices in van der Waals heterostructures are gaining increasing attention because they offer new opportunities to tailor and explore unique electronic phenomena when stacking 2D materials with small twist angles. Here, we reveal local surface potentials associated with stacking domains in twisted double bilayer graphene (TDBG) moiré superlattices. Using a combination of both lateral P… ▽ More Moiré superlattices in van der Waals heterostructures are gaining increasing attention because they offer new opportunities to tailor and explore unique electronic phenomena when stacking 2D materials with small twist angles. Here, we reveal local surface potentials associated with stacking domains in twisted double bilayer graphene (TDBG) moiré superlattices. Using a combination of both lateral Piezoresponse Force Microscopy (LPFM) and Scanning Kelvin Probe Microscopy (SKPM), we distinguish between Bernal (ABAB) and rhombohedral (ABCA) stacked graphene and directly correlate these stacking configurations with local surface potential. We find that the surface potential of the ABCA domains is ~15 mV higher (smaller work function) than that of the ABAB domains. First-principles calculations based on density functional theory further show that the different work functions between ABCA and ABAB domains arise from the stacking dependent electronic structure. We show that, while the moiré superlattice visualized by LPFM can change with time, imaging the surface potential distribution via SKPM appears more stable, enabling the mapping of ABAB and ABCA domains without tip-sample contact-induced effects. Our results provide a new means to visualize and probe local domain stacking in moiré superlattices along with its impact on electronic properties. △ Less

Submitted 17 February, 2021; originally announced February 2021.

Comments: 15 pages, 4 figures

Bismuth-doping Alters Structural Phase Transitions in Methylammonium Lead Tribromide Single Crystals

Authors: Erin Jedlicka, Jian Wang, Joshua Mutch, Young-Kwang Jung, Preston Went, Joseph Mohammed, Mark Ziffer, Rajiv Giridharagopal, Aron Walsh, Jiun-Haw Chu, David S. Ginger

Abstract: We study the effects of bismuth doping on the crystal structure and phase transitions in single crystals of the perovskite semiconductor methylammonium lead tribromide, MAPbBr3. By measuring temperature-dependent specific heat capacity (Cp) we find that, as Bi doping increases, the phase transition assigned to the cubic to tetragonal phase boundary decreases in temperature. Furthermore, after dopi… ▽ More We study the effects of bismuth doping on the crystal structure and phase transitions in single crystals of the perovskite semiconductor methylammonium lead tribromide, MAPbBr3. By measuring temperature-dependent specific heat capacity (Cp) we find that, as Bi doping increases, the phase transition assigned to the cubic to tetragonal phase boundary decreases in temperature. Furthermore, after doping we observe one phase transition between 135 and 155 K, in contrast to two transitions observed in the undoped single crystal. These results appear strikingly similar to previously reported effects of mechanical pressure on perovskite crystal structure. Using X-ray diffraction, we show that the lattice constant decreases as Bi is incorporated into the crystal, as predicted by density functional theory (DFT). We propose that bismuth substitutional doping on the lead site is dominant, resulting in BiPb+ centers which induce compressive chemical strain that alters the crystalline phase transitions. △ Less

Submitted 16 March, 2021; v1 submitted 16 February, 2021; originally announced February 2021.

Comments: 19 pages, 4 figures

Journal ref: J. Phys. Chem. Lett. 2021, 12, 2749 - 2755

Sn4+ Precursor Enables 12.4% Efficient Kesterite Solar Cell from DMSO Solution with Open Circuit Voltage Deficit Below 0.30 V

Authors: Yuancai Gong, Yifan Zhang, Erin Jedlicka, Rajiv Giridharagopal, James A. Clark, Weibo Yan, Chuanyou Niu, Ruichan Qiu, Jingjing Jiang, Shaotang Yu, Sanping Wu, Hugh W. Hillhouse, David S. Ginger, Wei Huang, Hao Xin

Abstract: The limiting factor preventing kesterite (CZTSSe) thin film solar cell performance further improvement is the large open-circuit voltage deficit (Voc,def) issue, which is 0.345V for the current world record device with an efficiency of 12.6%. In this work, SnCl4 and SnCl2_2H2O are respectively used as tin precursor to investigate the Voc,def issue of dimethyl sulfoxide (DMSO) solution processed CZ… ▽ More The limiting factor preventing kesterite (CZTSSe) thin film solar cell performance further improvement is the large open-circuit voltage deficit (Voc,def) issue, which is 0.345V for the current world record device with an efficiency of 12.6%. In this work, SnCl4 and SnCl2_2H2O are respectively used as tin precursor to investigate the Voc,def issue of dimethyl sulfoxide (DMSO) solution processed CZTSSe solar cells. Different complexations of tin compounds with thiourea and DMSO lead to different reaction pathways from solution to absorber material and thus dramatic difference in photovoltaic performance. The coordination of Sn2+ with Tu leads to the formation of SnS and ZnS and Cu2S in the precursor film, which converted to selenides first and then fused to CZTSSe, resulting in poor film quality and device performance. The highest efficiency obtained from this film is 8.84% with a Voc,def of 0.391V. The coordination of Sn4+ with DMSO facilitates direct formation ofkesterite CZTS phase in the precursor film which directed converted to CZTSSe during selenization, resulting in compositional uniform absorber and high device performance. A device with active area efficiency 12.2% and a Voc,def of 0.344 V was achieved from Sn4+ solution processed absorber. Furthermore, CZTSSe/CdS heterojunction heat treatment (JHT) significantly improved Sn4+ device performance but had slightly negative effect on Sn2+ device. A champion CZTSSe solar cell with a total area efficiency of 12.4% (active are efficiency 13.6%) and low Voc,def of 0.297 V was achieved from Sn4+ solution. Our results demonstrate the preformed uniform kesterite phase enabled by Sn4+ precursor is the key in achieving highly efficient kesterite absorber material. The lowest Voc-def and high efficiency achieved here shines new light on the future of kesterite solar cell. △ Less

Submitted 22 May, 2020; originally announced May 2020.

Comments: 10 pages,3 figures

Noncontact Imaging of Ion Dynamics in Polymer Electrolytes with Time-Resolved Electrostatic Force Microscopy

Authors: Jeffrey S. Harrison, Dean A. Waldow, Phillip A. Cox, Rajiv Giridharagopal, Marisa L. Adams, Victoria L. Richmond, Sevryn P. Modahl, Megan R. Longstaff, Rodion A. Zhuravlev, David S. Ginger

Abstract: Ionic transport processes govern performance in many classic and emerging devices, ranging from battery storage to modern mixed-conduction electrochemical transistors. Here, we study local ion transport dynamics in polymer films using time-resolved electrostatic force microscopy (trEFM). We establish a correspondence between local and macroscopic measurements using local trEFM and macroscopic elec… ▽ More Ionic transport processes govern performance in many classic and emerging devices, ranging from battery storage to modern mixed-conduction electrochemical transistors. Here, we study local ion transport dynamics in polymer films using time-resolved electrostatic force microscopy (trEFM). We establish a correspondence between local and macroscopic measurements using local trEFM and macroscopic electrical impedance spectroscopy (EIS). We use polymer films doped with lithium bis(trifluoromethane)sulfonimide (LiTFSI) as a model system where the polymer backbone has oxanorbornenedicarboximide repeat units with an oligomeric ethylene oxide side chain of length n. Our results show that the local polymer response measured in the time domain with trEFM follows stretched exponential relaxation kinetics, consistent with the Havriliak-Negami relaxation we measure in the frequency-domain EIS data for macroscopic samples of the same polymers. Furthermore, we show that the trEFM results capture the same trends as the EIS results-changes in ion dynamics with increasing temperature, increasing salt concentration, and increasing volume fraction of ethylene oxide side chains in the polymer matrix evolve with the same trends in both measurement techniques. We conclude from this correlation that trEFM data reflect, at the nanoscale, the same ionic processes probed in conventional EIS at the device level. Finally, as an example application for emerging materials syntheses, we use trEFM and infrared photoinduced force microscopy (PiFM) to image a novel diblock copolymer electrolyte for next-generation solid-state energy storage applications. △ Less

Submitted 12 October, 2018; originally announced October 2018.

Interfacial charge transfer in nanoscale polymer transistors

Authors: J. H. Worne, R. Giridharagopal, K. F. Kelly, D. Natelson

Abstract: Interfacial charge transfer plays an essential role in establishing the relative alignment of the metal Fermi level and the energy bands of organic semiconductors. While the details remain elusive in many systems, this charge transfer has been inferred in a number of photoemission experiments. We present electronic transport measurements in very short channel ($L < 100$ nm) transistors made from… ▽ More Interfacial charge transfer plays an essential role in establishing the relative alignment of the metal Fermi level and the energy bands of organic semiconductors. While the details remain elusive in many systems, this charge transfer has been inferred in a number of photoemission experiments. We present electronic transport measurements in very short channel ($L < 100$ nm) transistors made from poly(3-hexylthiophene) (P3HT). As channel length is reduced, the evolution of the contact resistance and the zero-gate-voltage conductance are consistent with such charge transfer. Short channel conduction in devices with Pt contacts is greatly enhanced compared to analogous devices with Au contacts, consistent with charge transfer expectations. Alternating current scanning tunneling microscopy (ACSTM) provides further evidence that holes are transferred from Pt into P3HT, while much less charge transfer takes place at the Au/P3HT interface. △ Less

Submitted 22 September, 2008; originally announced September 2008.

Comments: 19 preprint pages, 6 figures

Journal ref: Nano. Res. 1, 341-350 (2008)