Showing 1–4 of 4 results for author: Girard, J -

Atomic scale visualization of the p-d hybridization in III-V semiconductors doped with transition metal impurities

Authors: K. Badiane, G. Rodary, M. Amato, A. Gloter, C. David, H. Aubin, J. -C. Girard

Abstract: p-d hybridization of transition metal impurities in a semiconductor host is the mechanism that couples valence-band electrons and localized spins. We use scanning tunneling microscopy and spectroscopy combined with density functional theory to probe at the atomic scale hybridization of Cr single impurities with GaAs host. Combining spatial density of states mapping and in-gap states spectroscopy o… ▽ More p-d hybridization of transition metal impurities in a semiconductor host is the mechanism that couples valence-band electrons and localized spins. We use scanning tunneling microscopy and spectroscopy combined with density functional theory to probe at the atomic scale hybridization of Cr single impurities with GaAs host. Combining spatial density of states mapping and in-gap states spectroscopy of the Cr substituted at the surface of the semiconductor, we give a detailed picture of the spatial extension and the electronic structure of the strongly anisotropic wave function of Cr on GaAs(110). First principles calculations allow to identify electronic character and origin of each states and show that the main resonance peaks and the wave function with "drop-eyes" lobes experimentally observed for 3d metal impurities in III-V semiconductor are direct local evidences of the p-d hybridization. △ Less

Submitted 17 May, 2022; originally announced May 2022.

Cryogenic sensor enabling broad-band and traceable power measurements

Authors: J. -P. Girard, R. E. Lake, W. Liu, R. Kokkoniemi, E. Visakorpi, J. Govenius, M. Möttönen

Abstract: Recently, great progress has been made in the field of ultrasensitive microwave detectors, reaching even the threshold for utilization in circuit quantum electrodynamics. However, cryogenic sensors lack the compatibility with broad-band metrologically traceable power absorption measurements at ultralow powers, which limits their scope of applications. Here, we demonstrate such measurements using a… ▽ More Recently, great progress has been made in the field of ultrasensitive microwave detectors, reaching even the threshold for utilization in circuit quantum electrodynamics. However, cryogenic sensors lack the compatibility with broad-band metrologically traceable power absorption measurements at ultralow powers, which limits their scope of applications. Here, we demonstrate such measurements using an ultralow-noise nanobolometer which we extend by an additional direct-current (dc) heater input. The tracing of the absorbed power relies on comparing the response of the bolometer between radio frequency (rf) and dc-heating powers traced to the Josephson voltage and quantum Hall resistance. To illustrate this technique, we demonstrate methods to calibrate the power that is delivered to the base temperature stage of a dilution refrigerator using our in-situ power sensor. As an example, we demonstrate the ability to measure accurately the attenuation of a coaxial input line between the frequencies of 50 MHz and 7 GHz with an uncertainty down to 0.1 dB at typical input power of -114 dBm. △ Less

Submitted 3 March, 2023; v1 submitted 11 August, 2021; originally announced August 2021.

Comments: 10 pages, 7 figures

Bolometer operating at the threshold for circuit quantum electrodynamics

Authors: R. Kokkoniemi, J. -P. Girard, D. Hazra, A. Laitinen, J. Govenius, R. E. Lake, I. Sallinen, V. Vesterinen, P. Hakonen, M. Möttönen

Abstract: Radiation sensors based on the heating effect of the absorbed radiation are typically relatively simple to operate and flexible in terms of the input frequency. Consequently, they are widely applied, for example, in gas detection, security, THz imaging, astrophysical observations, and medical applications. A new spectrum of important applications is currently emerging from quantum technology and e… ▽ More Radiation sensors based on the heating effect of the absorbed radiation are typically relatively simple to operate and flexible in terms of the input frequency. Consequently, they are widely applied, for example, in gas detection, security, THz imaging, astrophysical observations, and medical applications. A new spectrum of important applications is currently emerging from quantum technology and especially from electrical circuits behaving quantum mechanically. This circuit quantum electrodynamics (cQED) has given rise to unprecedented single-photon detectors and a quantum computer supreme to the classical supercomputers in a certain task. Thermal sensors are appealing in enhancing these devices since they are not plagued by quantum noise and are smaller, simpler, and consume about six orders of magnitude less power than the commonly used traveling-wave parametric amplifiers. However, despite great progress in the speed and noise levels of thermal sensors, no bolometer to date has proven fast and sensitive enough to provide advantages in cQED. Here, we experimentally demonstrate a bolometer surpassing this threshold with a noise equivalent power of $30\, \rm{zW}/\sqrt{\rm{Hz}}$ on par with the current record while providing two-orders of magnitude shorter thermal time constant of 500 ns. Importantly, both of these characteristic numbers have been measured directly from the same device, which implies a faithful estimation of the calorimetric energy resolution of a single 30-GHz photon. These improvements stem from the utilization of a graphene monolayer as the active material with extremely low specific heat. The minimum demonstrated time constant of 200 ns falls greatly below the state-of-the-art dephasing times of roughly 100 μs for superconducting qubits and meets the timescales of contemporary readout schemes thus enabling the utilization of thermal detectors in cQED. △ Less

Submitted 11 August, 2020; originally announced August 2020.

STM images of sub-surface Mn atoms in GaAs: evidence of hybridization of surface and impurity states

Authors: J. -M. Jancu, J. -Ch. Girard, M. Nestoklon, A. Lemaitre, F. Glas, Z. Z. Wang

Abstract: We prove that scanning tunneling microscopy (STM) images of sub-surface Mn atoms in GaAs are formed by hybridization of the impurity state with intrinsic surface states. They cannot be interpreted in terms of bulk-impurity wavefunction imaging. High atomic resolution images obtained using a low-temperature apparatus are compared with advanced, parameter-free tight-binding simulations accounting… ▽ More We prove that scanning tunneling microscopy (STM) images of sub-surface Mn atoms in GaAs are formed by hybridization of the impurity state with intrinsic surface states. They cannot be interpreted in terms of bulk-impurity wavefunction imaging. High atomic resolution images obtained using a low-temperature apparatus are compared with advanced, parameter-free tight-binding simulations accounting for both the buckled (110) surface and vacuum electronic properties. △ Less

Submitted 27 March, 2008; originally announced March 2008.