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Analytical modelling for the frequency behavior of two distinct modes in nano-constriction spin Hall nano-oscillator
Authors:
H. Ghanatian,
M. Rajabali,
R. Khymyn,
A. Kumar,
V. H. González,
H. Farkhani,
J. Åkerman,
F. Moradi
Abstract:
Nano-constriction spin-Hall nano-oscillators (NC-SHNOs) have garnered considerable interest due to their potential use as efficient and adjustable nano-sized sources of microwave signals, with high-frequency tunability, adaptable design layout, and CMOS compatibility. In order to facilitate system- and circuit-level designs based on the NC-SHNOs, it is essential to have an analytical model capable…
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Nano-constriction spin-Hall nano-oscillators (NC-SHNOs) have garnered considerable interest due to their potential use as efficient and adjustable nano-sized sources of microwave signals, with high-frequency tunability, adaptable design layout, and CMOS compatibility. In order to facilitate system- and circuit-level designs based on the NC-SHNOs, it is essential to have an analytical model capable of predicting the behavior of the NC-SHNO. In this paper, we introduce an analytical model to describe the frequency behavior of a single NC-SHNO in an in-plane magnetic field while considering the Oersted field. The model is divided into two regions based on the direct current value: the "linear-like" and "bullet" modes. Each region is characterized by distinct concepts and equations. The first region, the "linear-like mode," emerges from the nano-constriction edges and progresses toward the center of the active area of the NC-SHNO. In contrast, the second regime, the localized "bullet mode," exhibits negative nonlinearity, where increasing the current will lead to a decrease in frequency. The model's validity is confirmed through experimental data obtained from electrical RF measurements on a single 180nm wide NC-SHNO, and the model demonstrates excellent agreement with experimental data.
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Submitted 3 February, 2025; v1 submitted 12 December, 2024;
originally announced December 2024.
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Spin-Orbit Torque Flash Analog-to-Digital Converter
Authors:
Hamdam Ghanatian,
Luana Benetti,
Pedro Anacleto,
Tim Bohnert,
Hooman Farkhani,
Ricardo Ferreira,
Farshad Moradi
Abstract:
Although Analog-to-digital converters (ADCs) are critical components in mixed-signal integrated circuits (IC), their performance has not been improved significantly over the last decade. To achieve a radical improvement (compact, low power and reliable ADCs), spintronics can be considered as a proper candidate due to its compatibility with CMOS and wide applications in storage, neuromorphic comput…
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Although Analog-to-digital converters (ADCs) are critical components in mixed-signal integrated circuits (IC), their performance has not been improved significantly over the last decade. To achieve a radical improvement (compact, low power and reliable ADCs), spintronics can be considered as a proper candidate due to its compatibility with CMOS and wide applications in storage, neuromorphic computing, and so on. In this paper, a proof-of-concept of a 3-bit spin-CMOS Flash ADC using in-plane-anisotropy magnetic tunnel junctions (i-MTJs) with spin-orbit torque (SOT) switching mechanism is designed, fabricated and characterized. The proposed ADC replaces the current mirrors and power-hungry comparators in the conventional Flash ADC with seven parallel i-MTJs with different heavy metal (HM) widths. Monte-Carlo simulations based on the experimental measurements show the process variations/mismatch limits the accuracy of the proposed ADC to 2 bits. Moreover, the maximum differential nonlinearity (DNL) and integral nonlinearity (INL) are 0.739 LSB (least significant bit) and 0.7319 LSB, respectively.
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Submitted 9 January, 2023;
originally announced January 2023.
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Spin-Orbit-Torque-based Devices, Circuits and Architectures
Authors:
Farshad Moradi,
Hooman Farkhani,
Behzad Zeinali,
Hamdam Ghanatian,
Johan Michel Alain Pelloux-Prayer,
Tim Boehnert,
Mohammad Zahedinejad,
Hadi Heidari,
Vahid Nabaei,
Ricardo Ferreira,
Johan Akerman,
Jens Kargaard Madsen
Abstract:
Spintronics, the use of spin of an electron instead of its charge, has received huge attention from research communities for different applications including memory, interconnects, logic implementation, neuromorphic computing, and many other applications. Here, in this paper, we review the works within spintronics, more specifically on spin-orbit torque (SOT) within different research groups. We a…
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Spintronics, the use of spin of an electron instead of its charge, has received huge attention from research communities for different applications including memory, interconnects, logic implementation, neuromorphic computing, and many other applications. Here, in this paper, we review the works within spintronics, more specifically on spin-orbit torque (SOT) within different research groups. We also provide researchers an insight into the future potentials of the SOT-based designs. This comprehensive review paper covers different aspects of SOT-based design from device and circuit to architecture level as well as more ambitious and futuristic applications of such technology.
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Submitted 3 December, 2019;
originally announced December 2019.
