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Current Oscillations in Quasi-2D Charge-Density-Wave 1T-TaS2 Devices: Revisiting the "Narrow Band Noise" Concept
Authors:
Adane K. Geremew,
Sergey Rumyantsev,
Roger Lake,
Alexander A. Balandin
Abstract:
We report on current oscillations in quasi two-dimensional (2D) 1T-TaS2 charge-density-wave devices. The MHz-frequency range of the oscillations and the linear dependence of the frequency of the oscillations on the current resemble closely the "narrow band noise," which was often observed in the classical bulk quasi-one-dimensional (1D) trichalcogenide charge-density-wave materials. In bulk quasi-…
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We report on current oscillations in quasi two-dimensional (2D) 1T-TaS2 charge-density-wave devices. The MHz-frequency range of the oscillations and the linear dependence of the frequency of the oscillations on the current resemble closely the "narrow band noise," which was often observed in the classical bulk quasi-one-dimensional (1D) trichalcogenide charge-density-wave materials. In bulk quasi-1D materials, the "narrow band noise" was interpreted as a direct evidence of the charge-density-wave sliding. Despite the similarities, we argue that the nature of the MHz oscillations in quasi-2D 1T-TaS2 is different from the "narrow band noise." Analysis of the biasing conditions and current indicate that the observed oscillations are related to the current instabilities due to the voltage-induced transition from the nearly commensurate to incommensurate charge-density-wave phase.
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Submitted 29 February, 2020;
originally announced March 2020.
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Low-Frequency Electronic Noise in Superlattice and Random-Packed Thin Films of Colloidal Quantum Dots
Authors:
Adane Geremew,
Caroline Qian,
Alex Abelson,
Sergey Rumyantsev,
Fariborz Kargar,
Matt Law,
Alexander A. Balandin
Abstract:
We report measurements of low-frequency electronic noise in ordered superlattice, weakly-ordered and random-packed thin films of 6.5 nm PbSe quantum dots prepared using several different ligand chemistries. For all samples, the normalized noise spectral density of the dark current revealed a Lorentzian component, reminiscent of the generation-recombination noise, superimposed on the 1/f background…
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We report measurements of low-frequency electronic noise in ordered superlattice, weakly-ordered and random-packed thin films of 6.5 nm PbSe quantum dots prepared using several different ligand chemistries. For all samples, the normalized noise spectral density of the dark current revealed a Lorentzian component, reminiscent of the generation-recombination noise, superimposed on the 1/f background (f is the frequency). An activation energy of 0.3 eV was extracted from the temperature dependence of the noise spectra. The noise level in the ordered films was lower than that in the weakly-ordered and random-packed films. A large variation in the magnitude of the noise spectral density was also observed in samples with different ligand treatments. The obtained results are important for application of colloidal quantum dot films in photodetectors.
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Submitted 10 August, 2019;
originally announced August 2019.
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Thermal Properties of the Binary-Filler Composites with Few-Layer Graphene and Copper Nanoparticles
Authors:
Zahra Barani,
Amirmahdi Mohammadzadeh,
Adane Geremew,
Chun Yu Tammy Huang,
Devin Coleman,
Lorenzo Mangolini,
Fariborz Kargar,
Alexander A. Balandin
Abstract:
The thermal properties of an epoxy-based binary composites comprised of graphene and copper nanoparticles are reported. It is found that the "synergistic" filler effect, revealed as a strong enhancement of the thermal conductivity of composites with the size-dissimilar fillers, has a well-defined filler loading threshold. The thermal conductivity of composites with a moderate graphene concentratio…
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The thermal properties of an epoxy-based binary composites comprised of graphene and copper nanoparticles are reported. It is found that the "synergistic" filler effect, revealed as a strong enhancement of the thermal conductivity of composites with the size-dissimilar fillers, has a well-defined filler loading threshold. The thermal conductivity of composites with a moderate graphene concentration of ~15 wt% exhibits an abrupt increase as the loading of copper nanoparticles approaches ~40 wt%, followed by saturation. The effect is attributed to intercalation of spherical copper nanoparticles between the large graphene flakes, resulting in formation of the highly thermally conductive percolation network. In contrast, in composites with a high graphene concentration, ~40 wt%, the thermal conductivity increases linearly with addition of copper nanoparticles. The electrical percolation is observed at low graphene loading, less than 7 wt.%, owing to the large aspect ratio of graphene. At all concentrations of the fillers, below and above the electrical percolation threshold, the thermal transport is dominated by phonons. The obtained results shed light on the interaction between graphene fillers and copper nanoparticles in the composites and demonstrate potential of such hybrid epoxy composites for practical applications in thermal interface materials and adhesives.
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Submitted 21 May, 2019;
originally announced May 2019.
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Low Resistivity and High Breakdown Current Density of 10-nm Diameter van der Waals TaSe3 Nanowires by Chemical Vapor Deposition
Authors:
Thomas A. Empante,
Aimee Martinez,
Michelle Wurch,
Yanbing Zhu,
Adane K. Geremew,
Koichi Yamaguchi,
Miguel Isarraraz,
Sergey Rumyantsev,
Evan J. Reed,
Alexander A. Balandin,
Ludwig Bartels
Abstract:
Micron-scale single-crystal nanowires of metallic TaSe3, a material that forms -Ta-Se3-Ta-Se3- stacks separated from one another by a tubular van der Waals (vdW) gap, have been synthesized using chemical vapor deposition (CVD) on a SiO2/Si substrate, in a process compatible with semiconductor industry requirements. Their electrical resistivity was found unaffected by downscaling from the bulk to a…
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Micron-scale single-crystal nanowires of metallic TaSe3, a material that forms -Ta-Se3-Ta-Se3- stacks separated from one another by a tubular van der Waals (vdW) gap, have been synthesized using chemical vapor deposition (CVD) on a SiO2/Si substrate, in a process compatible with semiconductor industry requirements. Their electrical resistivity was found unaffected by downscaling from the bulk to as little as 7 nm in width and height, in striking contrast to the resistivity of copper for the same dimensions. While the bulk resistivity of TaSe3 is substantially higher than that of bulk copper, at the nanometer scale the TaSe3 wires become competitive to similar-sized copper ones. Moreover, we find that the vdW TaSe3 nanowires sustain current densities in excess of 108 A/cm2 and feature an electromigration energy barrier twice that of copper. The results highlight the promise of quasi-one-dimensional transition metal trichalcogenides for electronic interconnect applications and the potential of van der Waals materials for downscaled electronics.
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Submitted 14 March, 2019;
originally announced March 2019.
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Electric Switching of the Charge-Density-Wave and Normal Metallic Phases in Tantalum Disulfide Thin-Film Devices
Authors:
A. Geremew,
S. Rumyantsev,
F. Kargar,
B. Debnath,
A. Nosek,
M. Bloodgood,
M. Bockrath,
T. Salguero,
R. K. Lake,
A. A. Balandin
Abstract:
We report on switching among three charge-density-wave phases - commensurate, nearly commensurate, incommensurate - and the high-temperature normal metallic phase in thin-film 1T-TaS2 devices induced by application of an in-plane electric field. The electric switching among all phases has been achieved over a wide temperature range, from 77 K to 400 K. The low-frequency electronic noise spectrosco…
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We report on switching among three charge-density-wave phases - commensurate, nearly commensurate, incommensurate - and the high-temperature normal metallic phase in thin-film 1T-TaS2 devices induced by application of an in-plane electric field. The electric switching among all phases has been achieved over a wide temperature range, from 77 K to 400 K. The low-frequency electronic noise spectroscopy has been used as an effective tool for monitoring the transitions, particularly the switching from the incommensurate charge-density-wave phase to the normal metal phase. The noise spectral density exhibits sharp increases at the phase transition points, which correspond to the step-like changes in resistivity. Assignment of the phases is consistent with low-field resistivity measurements over the temperature range from 77 K to 600 K. Analysis of the experimental data and calculations of heat dissipation suggest that Joule heating plays a dominant role in the electric-field induced transitions in the tested 1T-TaS2 devices on Si/SiO2 substrates. The possibility of electrical switching among four different phases of 1T-TaS2 is a promising step toward nanoscale device applications. The results also demonstrate the potential of noise spectroscopy for investigating and identifying phase transitions in materials.
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Submitted 14 March, 2019;
originally announced March 2019.
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Low-Frequency Noise Spectroscopy of Charge-Density-Wave Phase Transitions in Vertical Quasi-2D Devices
Authors:
Ruben Salgado,
Amirmahdi Mohammadzadeh,
Fariborz Kargar,
Adane Geremew,
Chun-Yu Huang,
Matthew A. Bloodgood,
Sergey Rumyantsev,
Tina T. Salguero,
Alexander A. Balandin
Abstract:
We report results regarding the electron transport in vertical quasi-2D layered 1T-TaS2 charge-density-wave devices. The low-frequency noise spectroscopy was used as a tool to study changes in the cross-plane electrical characteristics of the quasi-2D material below room temperature. The noise spectral density revealed strong peaks - changing by more than an order-of-magnitude - at the temperature…
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We report results regarding the electron transport in vertical quasi-2D layered 1T-TaS2 charge-density-wave devices. The low-frequency noise spectroscopy was used as a tool to study changes in the cross-plane electrical characteristics of the quasi-2D material below room temperature. The noise spectral density revealed strong peaks - changing by more than an order-of-magnitude - at the temperatures closely matching the electrical resistance steps. Some of the noise peaks appeared below the temperature of the commensurate to nearly-commensurate charge-density-wave transition, possibly indicating the presence of the debated "hidden" phase transitions. These results confirm the potential of the noise spectroscopy for investigations of electron transport and phase transitions in novel materials.
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Submitted 5 January, 2019;
originally announced January 2019.
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Proton-Irradiation-Immune Electronics Implemented with Two-Dimensional Charge-Density-Wave Devices
Authors:
A. Geremew,
F. Kargar,
E. X. Zhang,
S. E. Zhao,
E. Aytan,
M. A. Bloodgood,
T. T. Salguero,
S. Rumyantsev,
A. Fedoseyev,
D. M. Fleetwood,
A. A. Balandin
Abstract:
Proton radiation damage is an important failure mechanism for electronic devices in near-Earth orbits, deep space and high energy physics facilities. Protons can cause ionizing damage and atomic displacements, resulting in device degradation and malfunction. Shielding of electronics increases the weight and cost of the systems but does not eliminate destructive single events produced by energetic…
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Proton radiation damage is an important failure mechanism for electronic devices in near-Earth orbits, deep space and high energy physics facilities. Protons can cause ionizing damage and atomic displacements, resulting in device degradation and malfunction. Shielding of electronics increases the weight and cost of the systems but does not eliminate destructive single events produced by energetic protons. Modern electronics based on semiconductors - even those specially designed for radiation hardness - remain highly susceptible to proton damage. Here we demonstrate that room temperature (RT) charge-density-wave (CDW) devices with quasi-two-dimensional (2D) 1T-TaS2 channels show remarkable immunity to bombardment with 1.8 MeV protons to a fluence of at least 10^14 H+cm^2. Current-voltage I-V characteristics of these 2D CDW devices do not change as a result of proton irradiation, in striking contrast to most conventional semiconductor devices or other 2D devices. Only negligible changes are found in the low-frequency noise spectra. The radiation immunity of these "all-metallic" CDW devices can be attributed to their two-terminal design, quasi-2D nature of the active channel, and high concentration of charge carriers in the utilized CDW phases. Such devices, capable of operating over a wide temperature range, can constitute a crucial segment of future electronics for space, particle accelerator and other radiation environments.
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Submitted 2 January, 2019;
originally announced January 2019.
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Anomalous Characteristics of the Generation - Recombination Noise in Quasi-One-Dimensional Van der Waals Nanoribbons
Authors:
Adane K. Geremew,
Sergey Rumyantsev,
Matthew A. Bloodgood,
Tina T. Salguero,
Alexander A. Balandin
Abstract:
We describe the low-frequency current fluctuations, i.e. electronic noise, in quasi-one-dimensional ZrTe3 van der Waals nanoribbons, which have recently attracted attention owing to their extraordinary high current carrying capacity. Whereas the low-frequency noise spectral density reveals 1/f behavior near room temperature, it is dominated by the Lorentzian bulges of the generation - recombinatio…
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We describe the low-frequency current fluctuations, i.e. electronic noise, in quasi-one-dimensional ZrTe3 van der Waals nanoribbons, which have recently attracted attention owing to their extraordinary high current carrying capacity. Whereas the low-frequency noise spectral density reveals 1/f behavior near room temperature, it is dominated by the Lorentzian bulges of the generation - recombination noise at low temperatures (f is the frequency). Unexpectedly, the corner frequency of the observed Lorentzian peaks shows strong sensitivity to the applied source - drain bias. This dependence on electric field can be explained by the Frenkel-Poole effect in the scenario where the voltage drop happens predominantly on the defects, which block the quasi-1D conduction channels. We also have found that the activation energy of the characteristic frequencies of the G-R noise in quasi-1D ZrTe3 is defined primarily by the temperature dependence of the capture cross-section of the defects rather than by their energy position. These results are important for the application of quasi-1D van der Waals materials in ultimately downscaled electronics.
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Submitted 28 August, 2018;
originally announced August 2018.
