Showing 1–2 of 2 results for author: Geller, C B
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Accurate first principles detailed balance determination of Auger recombination and impact ionization rates in semiconductors
Authors:
S. Picozzi,
R. Asahi,
C. B. Geller,
A. J. Freeman
Abstract:
The technologically important problem of predicting Auger recombination lifetimes in semiconductors is addressed by means of a fully first--principles formalism. The calculations employ highly precise energy bands and wave functions provided by the full--potential linearized augmented plane wave (FLAPW) code based on the screened exchange local density approximation. The minority carrier Auger l…
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The technologically important problem of predicting Auger recombination lifetimes in semiconductors is addressed by means of a fully first--principles formalism. The calculations employ highly precise energy bands and wave functions provided by the full--potential linearized augmented plane wave (FLAPW) code based on the screened exchange local density approximation. The minority carrier Auger lifetime is determined by two closely related approaches: \emph{i}) a direct evaluation of the Auger rates within Fermi's Golden Rule, and \emph{ii}) an indirect evaluation, based on a detailed balance formulation combining Auger recombination and its inverse process, impact ionization, in a unified framework. Calculated carrier lifetimes determined with the direct and indirect methods show excellent consistency \emph{i}) between them for $n$-doped GaAs and \emph{ii}%) with measured values for GaAs and InGaAs. This demonstrates the validity and accuracy of the computational formalism for the Auger lifetime and indicates a new sensitive tool for possible use in materials performance optimization.
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Submitted 30 August, 2002;
originally announced September 2002.
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Impact ionization in GaAs: a screened exchange density functional approach
Authors:
S. Picozzi,
R. Asahi,
C. B. Geller,
A. Continenza,
A. J. Freeman
Abstract:
Results are presented of a fully ab-initio calculation of impact ionization rates in GaAs within the density functional theory framework, using a screened-exchange formalism and the highly precise all-electron full-potential linearized augmented plane wave (FLAPW) method. The calculated impact ionization rates show a marked orientation dependence in {\bf k} space, indicating the strong restricti…
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Results are presented of a fully ab-initio calculation of impact ionization rates in GaAs within the density functional theory framework, using a screened-exchange formalism and the highly precise all-electron full-potential linearized augmented plane wave (FLAPW) method. The calculated impact ionization rates show a marked orientation dependence in {\bf k} space, indicating the strong restrictions imposed by the conservation of energy and momentum. This anisotropy diminishes as the impacting electron energy increases. A Keldysh type fit performed on the energy-dependent rate shows a rather soft edge and a threshold energy greater than the direct band gap. The consistency with available Monte Carlo and empirical pseudopotential calculations shows the reliability of our approach and paves the way to ab-initio calculations of pair production rates in new and more complex materials.
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Submitted 24 August, 2001;
originally announced August 2001.
