Direct evidence for two-gap superconductivity in hydrogen-intercalated titanium diselenide
Authors:
Erik Piatti,
Gaia Gavello,
Giovanni A. Ummarino,
Filip Košuth,
Pavol Szabó,
Peter Samuely,
Renato S. Gonnelli,
Dario Daghero
Abstract:
Transition-metal dichalcogenides (TMDs) offer an extremely rich material platform in the exploration of unconventional superconductivity. The unconventional aspects include exotic coupling mechanisms such as the Ising pairing, a complex interplay with other electronic orders such as charge-density waves (CDWs), symmetry-breaking and topological effects, and non-trivial gap structures such as multi…
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Transition-metal dichalcogenides (TMDs) offer an extremely rich material platform in the exploration of unconventional superconductivity. The unconventional aspects include exotic coupling mechanisms such as the Ising pairing, a complex interplay with other electronic orders such as charge-density waves (CDWs), symmetry-breaking and topological effects, and non-trivial gap structures such as multi-gap and possible nodal phases. Among TMDs, titanium diselenide (1$T$-TiSe$_2$) is one of the most studied and debated cases. Hints to an anomalous structure of its superconducting order parameter have emerged over the years, possibly linked to its spatial texturing in real and reciprocal space due to the presence of a 2$\times$2$\times$2 CDW phase, or to a pressure-driven multi-band Fermi surface. However, a direct evidence for a non-trivial structure of the superconducting gap in this material is still lacking. In this work, we bring the first evidence for a two-gap structure in the recently-discovered H-intercalated TiSe$_2$ superconductor (with T$_c \simeq 3.6$ K) by an extensive experimental study that combines magnetotransport measurements, point-contact spectroscopy and scanning tunnel spectroscopy. We show that the temperature dependence of the upper critical field (for $\vec B \parallel c$) as well as the shape of the point-contact and tunneling spectra strongly suggest the existence of two distinct superconducting gaps, and can indeed all be fitted in a self-consistent way with the same gap amplitudes $Δ_1 = 0.26 \pm 0.12$ meV and $Δ_2 =0.62 \pm 0.18$ meV.
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Submitted 2 May, 2025;
originally announced May 2025.
Facile synthesis of palladium hydride via ionic gate-driven protonation using a deep eutectic solvent
Authors:
Gaia Gavello,
Giorgio Tofani,
Domenico De Fazio,
Stefania Lettieri,
Andrea Mezzetta,
Lorenzo Guazzelli,
Christian S. Pomelli,
Renato S. Gonnelli,
Erik Piatti,
Dario Daghero
Abstract:
Developing novel protocols for hydrogen (H) loading is crucial for furthering the investigation of hydrides as potential high-temperature superconductors at lower pressures compared to recent discoveries. Ionic gating-induced protonation (IGP) has emerged as a promising technique for H loading due to its inherent simplicity, but it can be limited in the maximum density of injected H when ionic liq…
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Developing novel protocols for hydrogen (H) loading is crucial for furthering the investigation of hydrides as potential high-temperature superconductors at lower pressures compared to recent discoveries. Ionic gating-induced protonation (IGP) has emerged as a promising technique for H loading due to its inherent simplicity, but it can be limited in the maximum density of injected H when ionic liquids are used as a gating medium. Additionally, most ionic liquids are limited by high production costs, complex synthesis, and potential toxicity. Here, we demonstrate that large H concentrations can be successfully injected in both palladium (Pd) bulk foils and thin films (up to a stoichiometry PdH$_{0.89}$) by using a deep eutectic solvent (DES) choline chloride-glycerol 1:3 as gate electrolyte and applying gate voltages in excess of the cathodic stability limit. The attained H concentrations are large enough to induce superconductivity in Pd, albeit with an incomplete resistive transition which suggests a strongly inhomogeneous H incorporation in the Pd matrix. This DES-based IGP protocol can be used as a guideline for maximizing H loading in different materials, although specific details of the applied voltage profile might require adjustments based on the material under investigation.
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Submitted 17 December, 2024; v1 submitted 20 October, 2024;
originally announced October 2024.
