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A generalized equation for the critical current for a one-dimensional crossed-field gap in an orthogonal coordinate system
Authors:
Jack K. Wright,
N. R. Sree Harsha,
Allen L. Garner
Abstract:
Recent studies have applied variational calculus, conformal mapping, and point transformations to extend the one-dimensional SCLC from planar gaps to more complicated geometries. However, introducing a magnetic field orthogonal to the diode's electric field complicates these calculations due to changes in the electron trajectory. This paper extends a recent study that applied variational calculus…
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Recent studies have applied variational calculus, conformal mapping, and point transformations to extend the one-dimensional SCLC from planar gaps to more complicated geometries. However, introducing a magnetic field orthogonal to the diode's electric field complicates these calculations due to changes in the electron trajectory. This paper extends a recent study that applied variational calculus to determine the SCLC for a cylindrical crossed-field diode to derive an equation that is valid for any orthogonal coordinate system. We then derive equations for the SCLC for crossed-field gaps in spherical, tip-to-tip, and tip-to-plane geometries that can be solved numerically. These calculations exhibit a discontinuity at the Hull cutoff magnetic field $B_H$ corresponding to the transition to magnetic insulation as observed analytically for a planar geometry. The ratio of the crossed-field SCLC to the nonmagnetic SCLC becomes essentially independent of geometry when we fix $δ= D/D_M > 0.6$, where $D$ is the canonical gap distance accounting for geometric effects on electric potential and $D_M$ is the effective gap distance that accounts for magnetic field and geometry. The solutions for these geometries overlap as $δ\to 1$ since the geometric corrections for electric potential and magnetic field match. This indicates the possibility of more generally accounting for the combination of geometric and magnetic effects when calculating $B_H$ and SCLC.
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Submitted 17 April, 2025;
originally announced April 2025.
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Extending the Mott-Gurney law to one-dimensional nonplanar diodes using point transformations
Authors:
Allen L. Garner,
N. R. Sree Harsha,
Amanda M. Loveless
Abstract:
Recent studies have applied variational calculus, conformal mapping, and point transformations to generalize the one-dimensional (1D) space-charge limited current density (SCLCD) and electron emission mechanisms to nonplanar geometries; however, these assessments have focused on extending the Child-Langmuir law (CLL) for SCLCD in vacuum. Since the charge in the diode is independent of coordinate s…
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Recent studies have applied variational calculus, conformal mapping, and point transformations to generalize the one-dimensional (1D) space-charge limited current density (SCLCD) and electron emission mechanisms to nonplanar geometries; however, these assessments have focused on extending the Child-Langmuir law (CLL) for SCLCD in vacuum. Since the charge in the diode is independent of coordinate system (i.e., covariant), we apply bijective point transformations to extend the Mott-Gurney law (MGL) for the SCLCD in a collisional or semiconductor gap to nonplanar 1D geometries. This yields a modified MGL that replaces the Cartesian gap distance with a canonical gap distance that may be written generally in terms of geometric scale factors that are known for multiple geometries. We tabulate results for common geometries. Such an approach may be applied to any current density, including non-space-charge limited gaps and SCLCD that may fall between the CLL and MGL.
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Submitted 17 April, 2025;
originally announced April 2025.
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The implications of collisions on the spatial profile of electric potential and the space-charge limited current
Authors:
Allen L. Garner,
N. R. Sree Harsha
Abstract:
The space-charge limited current (SCLC) in a vacuum diode is given by the Child-Langmuir law (CLL), whose electric potential $\varphi(x) = (\it{x/D})^{4/3}$, where x is the spatial coordinate across the gap and D is the gap separation distance. For a collisional diode, SCLC is given by the Mott-Gurney law (MGL) and $\varphi(x) = (x/D)^{3/2}$. This Letter applies a capacitance argument for SCLC and…
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The space-charge limited current (SCLC) in a vacuum diode is given by the Child-Langmuir law (CLL), whose electric potential $\varphi(x) = (\it{x/D})^{4/3}$, where x is the spatial coordinate across the gap and D is the gap separation distance. For a collisional diode, SCLC is given by the Mott-Gurney law (MGL) and $\varphi(x) = (x/D)^{3/2}$. This Letter applies a capacitance argument for SCLC and uses the transit time from a recent exact solution for collisional SCLC to show that $\varphi(x) = (x/D)^ξ$ for a general collisional gap, where $4/3 \leqslant ξ\leqslant 3/2$. Furthermore, $ξ$ is strictly a function of $νT$, where $ν$ is the collision frequency and T is the electron transit time. Using this definition of $ξ$, we estimate the spatial dependence of the electron velocity and use the capacitance to derive an analytic equation for collisional SCLC that agrees within $\sim5-6\%$ of the exact solution that requires solving parametrically through T. We derive equations in the limits of $ν\longrightarrow 0$ and $ν\longrightarrow \infty$ for general $ξ$ that asymptotically recover the CLL as $ν\longrightarrow 0$ and the MGL as $ν\longrightarrow \infty$. Matching these limits shows that $ξ\simeq 1.40$ and $V \propto D^2ν^2$ at the transition from a vacuum to collisional diode for any device condition.
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Submitted 1 October, 2024;
originally announced October 2024.
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Space-charge-limited current density for nonplanar diodes with monoenergetic emission using Lie-point symmetries
Authors:
N. R. Sree Harsha,
Jacob M. Halpern,
Adam M. Darr,
Allen L. Garner
Abstract:
Understanding space-charge limited current density (SCLCD) is fundamentally and practically important for characterizing many high-power and high-current vacuum devices. Despite this, no analytic equations for SCLCD with nonzero monoenergetic initial velocity have been derived for nonplanar diodes from first principles. Obtaining analytic equations for SCLCD for nonplanar geometries is often compl…
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Understanding space-charge limited current density (SCLCD) is fundamentally and practically important for characterizing many high-power and high-current vacuum devices. Despite this, no analytic equations for SCLCD with nonzero monoenergetic initial velocity have been derived for nonplanar diodes from first principles. Obtaining analytic equations for SCLCD for nonplanar geometries is often complicated by the nonlinearity of the problem and over constrained boundary conditions. In this letter, we use the canonical coordinates obtained by identifying Lie-point symmetries to linearize the governing differential equations to derive SCLCD for any orthogonal diode. Using this method, we derive exact analytic equations for SCLCD with a monoenergetic injection velocity for one-dimensional cylindrical, spherical, tip-to-tip (t-t), and tip-to-plate (t-p) diodes. We specifically demonstrate that the correction factor from zero initial velocity to monoenergetic emission depends only on the initial kinetic and electric potential energies and not on the diode geometry and that SCLCD is universal when plotted as a function of the canonical gap size. We also show that SCLCD for a t-p diode is a factor of four larger than a t-t diode independent of injection velocity. The results reduce to previously derived results for zero initial velocity using variational calculus and conformal mapping.
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Submitted 3 March, 2022;
originally announced April 2022.
