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Monolithically Integrated Perovskite Semiconductor Lasers on Silicon Photonic Chips by Scalable Top-Down Fabrication
Authors:
Piotr J Cegielski,
Anna Lena Giesecke,
Stefanie Neutzner,
Caroline Porschatis,
Marina Gandini,
Daniel Schall,
Carlo AR Perini,
Jens Bolten,
Stephan Suckow,
Satender Kataria,
Bartos Chmielak,
Thorsten Wahlbrink,
Annamaria Petrozza,
Max C Lemme
Abstract:
Metal-halide perovskites are promising lasing materials for realization of monolithically integrated laser sources, the key components of silicon photonic integrated circuits (PICs). Perovskites can be deposited from solution and require only low temperature processing leading to significant cost reduction and enabling new PIC architectures compared to state-of-the-art lasers realized through cost…
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Metal-halide perovskites are promising lasing materials for realization of monolithically integrated laser sources, the key components of silicon photonic integrated circuits (PICs). Perovskites can be deposited from solution and require only low temperature processing leading to significant cost reduction and enabling new PIC architectures compared to state-of-the-art lasers realized through costly and inefficient hybrid integration of III-V semiconductors. Until now however, due to the chemical sensitivity of perovskites, no microfabrication process based on optical lithography and therefore on existing semiconductor manufacturing infrastructure has been established. Here, the first methylammonium lead iodide perovskite micro-disc lasers monolithically integrated into silicon nitride PICs by such a top-down process is presented. The lasers show a record low lasing threshold of 4.7 $μ$Jcm$^{-2}$ at room temperature for monolithically integrated lasers, which are CMOS compatible and can be integrated in the back-end-of-line (BEOL) processes.
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Submitted 18 July, 2019;
originally announced July 2019.
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Ultrafast THz probe of photo-induced polarons in lead-halide perovskites
Authors:
Eugenio Cinquanta,
Daniele Meggiolaro,
Silvia G. Motti,
Marina Gandini,
Marcelo J. P. Alcocer,
Quinten Adriaan Akkerman,
Caterina Vozzi,
Liberato Manna,
Filippo De Angelis,
Annamaria Petrozza,
Salvatore Stagira
Abstract:
We study the nature of photo-excited charge carriers in CsPbBr3 nanocrystal thin films by ultrafast optical pump - THz probe spectroscopy. We observe a deviation from a pure Drude dispersion of the THz dielectric response that is ascribed to the polaronic nature of carriers; a transient blueshift of observed phonon frequencies is indicative of the coupling between photogenerated charges and stretc…
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We study the nature of photo-excited charge carriers in CsPbBr3 nanocrystal thin films by ultrafast optical pump - THz probe spectroscopy. We observe a deviation from a pure Drude dispersion of the THz dielectric response that is ascribed to the polaronic nature of carriers; a transient blueshift of observed phonon frequencies is indicative of the coupling between photogenerated charges and stretching-bending modes of the deformed inorganic sublattice, as confirmed by DFT calculations.
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Submitted 12 December, 2018;
originally announced December 2018.
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Probing Femtosecond Lattice Displacement upon Photo-carrier generation in Lead Halide Perovskite
Authors:
Giovanni Batignani,
Giuseppe Fumero,
Ajay Ram Srimath Kandada,
Giulio Cerullo,
Marina Gandini,
Carino Ferrante,
Annamaria Petrozza,
Tullio Scopigno
Abstract:
Electronic properties and lattice vibrations are supposed to be strongly correlated in metal-halide perovskites, due to the "soft" fluctuating nature of their crystal lattice. Thus, unveiling electron-phonon coupling dynamics upon ultra-fast photoexcitation is necessary for understanding the optoelectronic behaviour of the semiconductor. Here, we use impulsive vibrational spectroscopy to reveal gr…
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Electronic properties and lattice vibrations are supposed to be strongly correlated in metal-halide perovskites, due to the "soft" fluctuating nature of their crystal lattice. Thus, unveiling electron-phonon coupling dynamics upon ultra-fast photoexcitation is necessary for understanding the optoelectronic behaviour of the semiconductor. Here, we use impulsive vibrational spectroscopy to reveal ground and excited state vibrational modes of methylammonium lead-bromide perovskite. We observe a coherent phonon at 106 cm-1 (13 meV), pertaining to the inorganic octahedral, which is peculiar of the electronic excited state and generated via displacive excitation mechanism. This indicates the formation of a new geometry, reached after a quarter of the phonon period T/4=80 fs, and fully equilibrated within the phonon lifetime of about 1 ps. Our observations unambiguously prove that this mode drives the crystalline distortion occurring upon carrier generation, implying the presence of polaronic effects.
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Submitted 24 May, 2017;
originally announced May 2017.
