-
Structural, Vibrational, and Electronic Behavior of Two GaGeTe Polymorphs under compression
Authors:
Enrico Bandiello,
Samuel Gallego-Parra,
Akun Liang,
Juan Ángel Sans,
Vanesa Cuenca-Gotor,
Estelina Lora da Silva,
Rosario Vilaplana,
Plácida. Rodríguez-Hernández,
Alfonso Muñoz,
Daniel Diaz-Anichtchenko,
Catalin Popescu,
Frederico Gil Alabarse,
Carlos Rudamas,
Čestmír Drašar,
Alfredo Segura,
Daniel Errandonea,
Francisco Javier Manjón
Abstract:
GaGeTe is a layered topological semimetal that has been recently found to exist in at least two different polytypes, $α$-GaGeTe ($R\bar{3}m$) and $β$-GaGeTe ($P6_3 mc$). Here we report a joint experimental and theoretical study of the structural, vibrational, and electronic properties of these two polytypes at high pressure. Both polytypes show anisotropic compressibility and two phase transitions…
▽ More
GaGeTe is a layered topological semimetal that has been recently found to exist in at least two different polytypes, $α$-GaGeTe ($R\bar{3}m$) and $β$-GaGeTe ($P6_3 mc$). Here we report a joint experimental and theoretical study of the structural, vibrational, and electronic properties of these two polytypes at high pressure. Both polytypes show anisotropic compressibility and two phase transitions, above 7 and 15 GPa, respectively, as confirmed by XRD and Raman spectroscopy measurements. Although the nature of the high-pressure phases is not confirmed, comparison with other chalcogenides and total-energy calculations allow us to propose possible high-pressure phases for both polytypes with an increase in coordination for Ga and Ge atoms from 4 to 6. In particular, the simplification of the X-ray patterns for both polytypes above 15 GPa suggests a transition to a structure of relatively higher symmetry than the original one. This result is consistent with the rocksalt-like high-pressure phases observed in parent III-VI semiconductors, such as GaTe, GaSe, and InSe. Pressure-induced amorphization is observed upon pressure release. The electronic band structures of $α$-GaGeTe and $β$-GaGeTe and their pressure dependence also show similarities to III-VI semiconductors, thus suggesting that the germanene-like sublayer induces a semimetallic character in both GaGeTe polytypes. Above 3 GPa, both polytypes lose their topological features, due to the opening of the direct band gap, while the reduction of the interlayer space increases the thermal conductivity at high pressure.
△ Less
Submitted 3 July, 2023; v1 submitted 4 May, 2023;
originally announced May 2023.
-
Pressure-induced formation of cubic lutetium hydrides derived from trigonal LuH$_3$
Authors:
Owen Moulding,
Samuel Gallego-Parra,
Yingzheng Gao,
Pierre Toulemonde,
Gaston Garbarino,
Patricia De Rango,
Sébastien Pairis,
Pierre Giroux,
Marie-Aude Méasson
Abstract:
In recent years, there has been a fervent search for room-temperature superconductivity within the binary hydrides. However, as the number of untested compounds dwindled, it became natural to begin searching within the ternary hydrides. This led to the controversial discovery of room-temperature superconductivity at only 1GPa in nitrogen-doped lutetium hydride [Dasenbrock-Gammon et al., Nature 615…
▽ More
In recent years, there has been a fervent search for room-temperature superconductivity within the binary hydrides. However, as the number of untested compounds dwindled, it became natural to begin searching within the ternary hydrides. This led to the controversial discovery of room-temperature superconductivity at only 1GPa in nitrogen-doped lutetium hydride [Dasenbrock-Gammon et al., Nature 615, 244 (2023)] and consequently provided much impetus for the synthesis of nitrogen-based ternary hydrides. Here, we report the synthesis of stable trigonal LuH$_3$ by hydrogenating pure lutetium which was subsequently pressurised to $\sim$2GPa in a dilute-N$_2$/He-rich pressure medium. Raman spectroscopy and x-ray diffraction were used to characterise the structures throughout. After depressurising, energy-dispersive and wavelength-dispersive X-ray spectroscopies characterised the final compound. Though our compound under pressure exhibits similar structural behaviour to the Dasenbrock-Gammon et al. sample, we do not observe any nitrogen within the structure of the recovered sample at ambient pressure. We observe two cubic structures under pressure that simultaneously explain the X-ray diffraction and Raman spectra observed: the first corresponds well to $Fm\overline{3}m$ LuH$_{2+x}$, whilst the latter is an $Ia\overline{3}$-type structure.
△ Less
Submitted 30 November, 2023; v1 submitted 9 April, 2023;
originally announced April 2023.
-
Layered topological semimetal GaGeTe: new polytype with non-centrosymmetric structure
Authors:
S. Gallego-Parra,
E. Bandiello,
A. Liang,
E. Lora da Silva,
P. Rodríguez-Hernández,
A. Muñoz,
S. Radescu,
A. H. Romero,
C. Drasar,
D. Errandonea,
F. J. Manjón
Abstract:
GaGeTe is a layered material composed of germanene and GaTe sublayers that has been recently predicted to be a basic Z2 topological semimetal. To date, only one polytype of GaGeTe is known with trigonal centrosymmetric structure (alpha phase, space group R-3m, No. 166). Here we show that as-grown samples of GaGeTe show traces of at least another polytype with hexagonal non-centrosymmetric structur…
▽ More
GaGeTe is a layered material composed of germanene and GaTe sublayers that has been recently predicted to be a basic Z2 topological semimetal. To date, only one polytype of GaGeTe is known with trigonal centrosymmetric structure (alpha phase, space group R-3m, No. 166). Here we show that as-grown samples of GaGeTe show traces of at least another polytype with hexagonal non-centrosymmetric structure (beta phase, space group P63mc, No. 186). Moreover, we suggest that another bulk hexagonal polytype (gamma phase, space group P-3m1, No. 164) could also be found near room conditions. Both alpha and beta polytypes have been identified and characterized by means of X-ray diffraction and Raman scattering measurements with the support of ab initio calculations. We provide the vibrational properties of both polytypes and show that the Raman spectrum reported for GaGeTe almost forty years ago and attributed to the alpha phase, was, in fact, that of the secondary beta phase. Additionally, we show that a Fermi resonance occurs in alpha-GaGeTe under non-resonant excitation conditions, but not under resonant excitation conditions. Theoretical calculations show that bulk beta-GaGeTe is a non-centrosymmetric weak topological semimetal with even smaller lattice thermal conductivity than centrosymmetric bulk alpha-GaGeTe. In perspective, our work paves the way for the control and engineering of GaGeTe polytypes to design and implement complex van der Waals heterostructures formed by a combination of centrosymmetric and non-centrosymmetric layers of up to three different polytypes in a single material, suitable for a number of fundamental studies and technological applications.
△ Less
Submitted 6 July, 2022;
originally announced July 2022.
-
Anomalous Raman Modes in Tellurides
Authors:
F. J. Manjón,
S. Gallego-Parra,
P. Rodríguez-Hernández,
A. Muñoz,
C. Drasar,
V. Muñoz-Sanjosé,
O. Oeckler
Abstract:
Two broad bands are usually found in the Raman spectrum of many Te-based chalcogenides, which include binary compounds, like ZnTe, CdTe, HgTe, GaTe, GeTe, SnTe, PbTe, GeTe2, As2Te3, Sb2Te3, Bi2Te3, NiTe2, IrTe2, TiTe2, as well as ternary compounds, like GaGeTe, SnSb2Te4, SnBi2Te4, and GeSb2Te5. Many different explanations have been proposed in the literature for the origin of these two anomalous b…
▽ More
Two broad bands are usually found in the Raman spectrum of many Te-based chalcogenides, which include binary compounds, like ZnTe, CdTe, HgTe, GaTe, GeTe, SnTe, PbTe, GeTe2, As2Te3, Sb2Te3, Bi2Te3, NiTe2, IrTe2, TiTe2, as well as ternary compounds, like GaGeTe, SnSb2Te4, SnBi2Te4, and GeSb2Te5. Many different explanations have been proposed in the literature for the origin of these two anomalous broad bands in tellurides, usually located between 119 and 145 cm-1. They have been attributed to the own sample, to oxidation, to the folding of Brillouin-edge modes onto the zone center, to the existence of a double resonance, like that of graphene, or to the formation of Te precipitates. In this paper, we provide arguments to demonstrate that such bands correspond to clusters or precipitates of trigonal Te in form of nanosize or microsize grains or layers that are segregated either inside or at the surface of the samples. Several mechanisms for Te segregation are discussed and sample heating caused by excessive laser power during Raman scattering measurements is emphasized. Finally, we show that anomalous Raman modes related to Se precipitates also occur in selenides, thus providing a general vision for a better characterization of selenides and tellurides by means of Raman scattering measurements and for a better understanding of chalcogenides in general.
△ Less
Submitted 23 February, 2021;
originally announced February 2021.
-
$β$-As$_2$Te$_3$: Pressure-Induced 3D Dirac Semi-Metal
Authors:
E. Lora da Silva,
A. Leonardo,
Tao Yang,
M. C. Santos,
R. Vilaplana,
S. Gallego-Parra,
A. Bergara,
F. J. Manjón
Abstract:
We report a theoretical \textit{ab-initio} study of $β$-As$_2$Te$_3$ ($R\bar{3}m$ symmetry) at hydrostatic pressures up to 12 GPa. We have systematically characterized the vibrational and electronic changes of the system induced by the pressure variation. The electronic band dispersions calculated at different pressures using \textit{QS}GW show an insulator-metal transition. At room pressure the s…
▽ More
We report a theoretical \textit{ab-initio} study of $β$-As$_2$Te$_3$ ($R\bar{3}m$ symmetry) at hydrostatic pressures up to 12 GPa. We have systematically characterized the vibrational and electronic changes of the system induced by the pressure variation. The electronic band dispersions calculated at different pressures using \textit{QS}GW show an insulator-metal transition. At room pressure the system is a semiconductor with small band-gap, and the valence and conduction bands present a parabolic conventional dispersion. However around 2 GPa the parabolic shape of the bands become linear and touch at the Fermi level. This means that this compound undergoes a pressure-induced topological phase transition to a 3D analog of graphene, known as a 3D Dirac semi-metal, with gapless electronic excitations. At increasing pressures the gap reopens and variation of the character of the electronic band-gap from direct to indirect is evidenced. At 7 GPa we observe the formation of a negative band-gap character, which persists for pressures up to 12 GPa. Topological insulating features are evidenced from 2 to 12 GPa with a Z$_4$=3 topological index. Moreover by investigating the lattice thermal-conductivity at different pressures, we observe an ultra low value of $κ_\textrm{L}$ at 300 K for 0.5 GPa (0.294 and 0.486 Wm$^{-1}$K$^{-1}$ for the $x$-$y$-axis and for the $z$-axis, respectively) which is the result of existing low-frequency optical modes. At 2 GPa $κ_\textrm{L}$ increases to 1.170 and 0.669 Wm$^{-1}$K$^{-1}$, for the $x$-$y$-axis and for the $z$-axis, respectively. At 4 GPa the thermal-conductivity values between the two distinct crystallographic axis tend to approximate, with 1.495 and 1.433 Wm$^{-1}$K$^{-1}$, along the $x$-$y$-axis and the $z$-axis, respectively.
△ Less
Submitted 27 November, 2020; v1 submitted 22 August, 2020;
originally announced August 2020.
