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Signatures of Orbital Order and Disorder in Fluoro-Perovskites with $t_{2g}$ Electronic Degeneracies
Authors:
C. A. Crawford,
C. I. Hiley,
J. Gainza,
C. Ritter,
R. I. Walton,
Mark S. Senn
Abstract:
A detailed high-resolution, variable temperature powder diffraction study of the fluoro-perovskites NaFeF$_3$ and NaCoF$_3$ is performed to probe their orbital ordering transitions. Through analysis of the symmetry adapted macrostrains and atomic distortions, we show that NaFeF$_3$ undergoes a C-type orbital order transition associated with the $t_{2g}^4$ states of Fe$^{2+}$. Counter-intuitively,…
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A detailed high-resolution, variable temperature powder diffraction study of the fluoro-perovskites NaFeF$_3$ and NaCoF$_3$ is performed to probe their orbital ordering transitions. Through analysis of the symmetry adapted macrostrains and atomic distortions, we show that NaFeF$_3$ undergoes a C-type orbital order transition associated with the $t_{2g}^4$ states of Fe$^{2+}$. Counter-intuitively, the phase transition leading to the orbital order appears second order-like, which contradicts the thermodynamic requirements for electronic and isosymmeric phase transitions, implying that there must be an associated hidden symmetry breaking. On the other hand, for NaCoF$_3$, consideration of the symmetry adapted strains allows us to confidently rule out the occurrence of any long-range orbital orders down to 4 K. Since NaCoF$_3$ is an insulator with quenched orbital angular momentum at this temperature, our findings point towards a novel kind of orbital disorder associated to the $t_{2g}^5$ electronic degeneracy.
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Submitted 4 April, 2025;
originally announced April 2025.
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Exotic magnetism in perovskite KOsO3
Authors:
Jie Chen,
Hongze Li,
Javier Gainza,
Angel Munoz,
Jose A. Alonso,
Jue Liu,
Yu-Sheng Chen,
Alexei A. Belik,
Kazunari Yamaura,
Jiaming He,
Xinyu Li,
John B. Goodenough,
J. -S. Zhou
Abstract:
A new perovskite KOsO3 has been stabilized under high-pressure and high temperature conditions. It is cubic at 500 K (Pm-3m) and undergoes subsequent phase transitions to tetragonal at 320 K (P4/mmm) and rhombohedral (R-3m) at 230 K as shown from refining synchrotron X-ray powder diffraction (SXRD) data. The larger orbital overlap integral and the extended wavefunction of 5d electrons in the perov…
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A new perovskite KOsO3 has been stabilized under high-pressure and high temperature conditions. It is cubic at 500 K (Pm-3m) and undergoes subsequent phase transitions to tetragonal at 320 K (P4/mmm) and rhombohedral (R-3m) at 230 K as shown from refining synchrotron X-ray powder diffraction (SXRD) data. The larger orbital overlap integral and the extended wavefunction of 5d electrons in the perovskite KOsO3 allow to explore physics from the regime where Mott and Hund's rule couplings dominate to the state where the multiple interactions are on equal footing. We demonstrate an exotic magnetic ordering phase found by neutron powder diffraction along with physical properties via a suite of measurements including magnetic and transport properties, differential scanning calorimetry, and specific heat, which provide comprehensive information for a system at the crossover from localized to itinerant electronic behavior.
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Submitted 19 March, 2024;
originally announced March 2024.
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Integrating van der Waals materials on paper substrates for electrical and optical applications
Authors:
Wenliang Zhang,
Qinghua Zhao,
Carmen Munuera,
Martin Lee,
Eduardo Flores,
João E. F. Rodrigues,
Jose R. Ares,
Carlos Sanchez,
Javier Gainza,
Herre S. J. van der Zant,
José A. Alonso,
Isabel J. Ferrer,
Tao Wang,
Riccardo Frisenda,
Andres Castellanos-Gomez
Abstract:
Paper holds the promise to replace silicon substrates in applications like internet of things or disposable electronics that require ultra-low-cost electronic components and an environmentally friendly electronic waste management. In the last years, spurred by the abovementioned properties of paper as a substrate and the exceptional electronic, mechanical and optical properties of van der Waals (v…
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Paper holds the promise to replace silicon substrates in applications like internet of things or disposable electronics that require ultra-low-cost electronic components and an environmentally friendly electronic waste management. In the last years, spurred by the abovementioned properties of paper as a substrate and the exceptional electronic, mechanical and optical properties of van der Waals (vdW) materials, many research groups have worked towards the integration of vdW materials-based devices on paper. Recently, a method to deposit a continuous film of densely packed interconnects of vdW materials on paper by simply rubbing the vdW crystals against the rough surface of paper has been presented. This method utilizes the weak interlayer vdW interactions and allows cleaving of the crystals into micro platelets through the abrasion against the paper. Here, we aim to illustrate the general character and the potential of this technique by fabricating films of 39 different vdW materials (including superconductors, semi-metals, semiconductors, and insulators) on standard copier paper. We have thoroughly characterized their optical properties showing their high optical quality: one can easily resolve the absorption band edge of semiconducting vdW materials and even the excitonic features present in some vdW materials with high exciton binding energy. We also measured the electrical resistivity for several vdW materials films on paper finding exceptionally low values, which are in some cases, orders of magnitude lower than those reported for analogous films produced by inkjet printing. We finally demonstrate the fabrication of field-effect devices with vdW materials on paper using the paper substrate as an ionic gate.
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Submitted 7 May, 2021;
originally announced May 2021.
