Showing 1–50 of 83 results for author: Furdyna, J K

Fermi level tuning and band alignment in Mn doped InAs/GaSb

Authors: Logan Riney, Joaquin Bermejo-Ortiz, Gauthier Krizman, Seul-Ki Bac, Jiashu Wang, Maksym Zhukovskyi, Tatyana Orlova, Louis Anne de Vaulchier, Yves Guldner, Roland Winkler, Jacek K. Furdyna, Xinyu Liu, Badih A. Assaf

Abstract: InAs/GaSb hosts a broken gap band alignment that has been shown to generate helical topological edge states. Upon the introduction of Mn into the structure, it has been predicted to host a quantized anomalous Hall effect. Here, we show that dilute Mn doping on InAs in InAs/GaSb, allows a tuning of the Fermi level, the introduction of paramagnetism, but also has a non-trivial impact on the band ali… ▽ More InAs/GaSb hosts a broken gap band alignment that has been shown to generate helical topological edge states. Upon the introduction of Mn into the structure, it has been predicted to host a quantized anomalous Hall effect. Here, we show that dilute Mn doping on InAs in InAs/GaSb, allows a tuning of the Fermi level, the introduction of paramagnetism, but also has a non-trivial impact on the band alignment of the system. The measurement of Shubnikov-de-Haas oscillations, cyclotron resonance, and a non-linear Hall effect in Mn-doped samples indicate the coexistence of a high mobility two-dimensional electron gas and a hole gas. Conversely, in undoped InAs/GaSb, pure-n-type transport is observed. We hypothesize that Mn acceptor levels can pin the Fermi energy near the valence band edge of InAs, far from the interface, which introduces a strong band bending to preserve the band offset at the InAs/GaSb interface. The realization of the QAHE in this structure will thus require a careful control of the band alignment to preserve topological insulating character. △ Less

Submitted 29 November, 2021; originally announced November 2021.

Epitaxial growth and magnetic characterization of EuSe thin films with various crystalline orientations

Authors: Ying Wang, Xinyu Liu, Seul-Ki Bac, Jacek K. Furdyna, Badih A. Assaf, Maksym Zhukovskyi, Tatyana Orlova, Neil R Dilley, Leonid P. Rokhinson

Abstract: We report different growth modes and corresponding magnetic properties of thin EuSe films grown by molecular beam epitaxy on BaF2, Pb1-xEuxSe, GaAs, and Bi2Se3 substrates. We show that EuSe growth predominantly in (001) orientation on GaAs(111) and Bi2Se3, but along (111) crystallographic direction on BaF2 (111) and Pb1-xEuxSe (111). High-resolution transmission electron microscopy measurements re… ▽ More We report different growth modes and corresponding magnetic properties of thin EuSe films grown by molecular beam epitaxy on BaF2, Pb1-xEuxSe, GaAs, and Bi2Se3 substrates. We show that EuSe growth predominantly in (001) orientation on GaAs(111) and Bi2Se3, but along (111) crystallographic direction on BaF2 (111) and Pb1-xEuxSe (111). High-resolution transmission electron microscopy measurements reveal an abrupt and highly crystalline interface for both (001) and (111) EuSe films. In agreement with previous studies, ordered magnetic phases include antiferromagnetic, ferrimagnetic, and ferromagnetic phases. In contrast to previous studies, we found strong hysteresis for the antiferromagnetic-ferrimagnetic transition. An ability to grow epitaxial films of EuSe on Bi2Se3 and of Bi2Se3 on EuSe enables further investigation of interfacial exchange interactions between various phases of an insulating metamagnetic material and a topological insulator. △ Less

Submitted 17 June, 2021; originally announced June 2021.

Comments: 19pages,13 figures

Topological response of the anomalous Hall effect in MnBi2Te4 due to magnetic canting

Authors: S. -K. Bac, K. Koller, F. Lux, J. Wang, L. Riney, K. Borisiak, W. Powers, M. Zhukovskyi, T. Orlova, M. Dobrowolska, J. K. Furdyna, N. R. Dilley, L. P. Rokhinson, Y. Mokrousov, R. J. McQueeney, O. Heinonen, X. Liu, B. A. Assaf

Abstract: Three-dimensional (3D) compensated MnBi2Te4 is antiferromagnetic, but undergoes a spin-flop transition at intermediate fields, resulting in a canted phase before saturation. In this work, we experimentally show that the anomalous Hall effect (AHE) in MnBi2Te4 originates from a topological response that is sensitive to the perpendicular magnetic moment and to its canting angle. Synthesis by molecul… ▽ More Three-dimensional (3D) compensated MnBi2Te4 is antiferromagnetic, but undergoes a spin-flop transition at intermediate fields, resulting in a canted phase before saturation. In this work, we experimentally show that the anomalous Hall effect (AHE) in MnBi2Te4 originates from a topological response that is sensitive to the perpendicular magnetic moment and to its canting angle. Synthesis by molecular beam epitaxy allows us to obtain a large-area quasi-3D 24-layer MnBi2Te4 with near-perfect compensation that hosts the phase diagram observed in bulk which we utilize to probe the AHE. This AHE is seen to exhibit an antiferromagnetic response at low magnetic fields, and a clear evolution at intermediate fields through surface and bulk spin-flop transitions into saturation. Throughout this evolution, the AHE is super-linear versus magnetization rather than the expected linear relationship. We reveal that this discrepancy is related to the canting angle, consistent with the symmetry of the crystal. Our findings suggests that novel topological responses may be found in non-collinear ferromagnetic, and antiferromagnetic phases. △ Less

Submitted 20 April, 2022; v1 submitted 29 March, 2021; originally announced March 2021.

Journal ref: npj Quantum Materials 7 46 (2022)

Introduction of Sr into Bi2Se3 thin films by molecular beam epitaxy

Authors: L. Riney, C. Bunker, S. -K. Bac, J. Wang, D. Battaglia, Yun Chang Park, M. Dobrowolska, J. K. Furdyna, X. Liu, B. A. Assaf

Abstract: SrxBi2Se3 is a candidate topological superconductor but its superconductivity requires the intercalation of Sr by into the van-der-Waals gaps of Bi2Se3. We report the synthesis of SrxBi2Se3 thin films by molecular beam epitaxy, and we characterize their structural, vibrational and electrical properties. X-ray diffraction and Raman spectroscopy show evidence of substitutional Sr alloying into the s… ▽ More SrxBi2Se3 is a candidate topological superconductor but its superconductivity requires the intercalation of Sr by into the van-der-Waals gaps of Bi2Se3. We report the synthesis of SrxBi2Se3 thin films by molecular beam epitaxy, and we characterize their structural, vibrational and electrical properties. X-ray diffraction and Raman spectroscopy show evidence of substitutional Sr alloying into the structure, while transport measurements allow us to correlate the increasing Sr content with an increased n-type doping, but do not reveal superconductivity down to 1.5K. Our results suggest that Sr predominantly occupies sites within a quintuple layer, simultaneously substituting for Bi and as an interstitial. Our results motivate future density functional studies to further investigate the energetics of Sr substitution into Bi2Se3. △ Less

Submitted 25 November, 2020; originally announced November 2020.

Weak antilocalization beyond the fully diffusive regime in Pb1-xSnxSe topological quantum wells

Authors: Jiashu Wang, X. Liu, C. Bunker, L. Riney, B. Qing, S. K. Bac, M. Zhukovskyi, T. Orlova, S. Rouvimov, M. Dobrowolska, J. K. Furdyna, B. A. Assaf

Abstract: We report the measurements and analysis of weak antilocalization (WAL) in Pb1-xSnxSe topological quantum wells in a new regime where the elastic scattering length is larger than the magnetic length. We achieve this regime through the development of high-quality epitaxy and doping of topological crystalline insulator (TCI) quantum wells. We obtain elastic scattering lengths that exceeds 100nm and b… ▽ More We report the measurements and analysis of weak antilocalization (WAL) in Pb1-xSnxSe topological quantum wells in a new regime where the elastic scattering length is larger than the magnetic length. We achieve this regime through the development of high-quality epitaxy and doping of topological crystalline insulator (TCI) quantum wells. We obtain elastic scattering lengths that exceeds 100nm and become comparable to the magnetic length. In this transport regime, the Hikami-Larkin-Nagaoka model is no longer valid. We employ the model of Wittmann and Schmid to extract the coherence time from the magnetoresistance. We find that despite our improved transport characteristics, the coherence time may be limited by scattering channels that are not strongly carrier dependent, such as electron-phonon or defect scattering. △ Less

Submitted 5 October, 2020; originally announced October 2020.

Comments: Accepted PRB

Anomalous critical point behavior in dilute magnetic semiconductor (Ca,Na)(Zn,Mn)2Sb2

Authors: Shuang Yu, Xinyu Liu, Guoqiang Zhao, Yi Peng, Xiancheng Wang, Jianfa Zhao, Wenmin Li, Zheng Deng, Jacek K. Furdyna, Y. J. Uemura, Changqing Jin

Abstract: In this paper we report successful synthesis and magnetic properties of (Ca,Na)(Zn,Mn)2Sb2 as a new ferromagnetic dilute magnetic semiconductor (DMS). In this DMS material the concentration of magnetic moments can be controlled independently from the concentration of electric charge carriers that are required for mediating magnetic interactions between these moments. This feature allows us to sepa… ▽ More In this paper we report successful synthesis and magnetic properties of (Ca,Na)(Zn,Mn)2Sb2 as a new ferromagnetic dilute magnetic semiconductor (DMS). In this DMS material the concentration of magnetic moments can be controlled independently from the concentration of electric charge carriers that are required for mediating magnetic interactions between these moments. This feature allows us to separately investigate the effect of carriers and of spins on the ferromagnetic properties of this new DMS alloy, and particularly of the critical ferromagnetic behavior. We use modified Arrott plot technique to establish critical exponents b, g, and d of this alloy. We find that at low Mn concentrations (< 10 at.%), it is governed by short-range 3D-Ising behavior, with experimental values of b, g, and d very close to theoretical 3D-Ising values of 0.325, 1.24, and 4.815. However, as the Mn concentration increases, this DMS material exhibits a mixed-phase behavior, with g retaining its 3D-Ising characteristics, but b crossing over to longer-range mean-field behavior. △ Less

Submitted 8 May, 2020; v1 submitted 17 March, 2020; originally announced March 2020.

Comments: 28 pages, 6figures, 1 table

Journal ref: Physical Review Materials 4, 024411 (2020)

Ultrafast Terahertz Conductivity Probes of Topologically Enhanced Surface Transport Driven by Mid-Infrared Laser Pulses in Bi$_2$Se$_3$

Authors: L. Luo, X. Yang, X. Liu, Z. Liu, C. Vaswani, D. Cheng, M. Mootz, I. E. Perakis, M. Dobrowolska, J. K. Furdyna, J. Wang

Abstract: The recent discovery of topology-protected charge transport of ultimate thinness on surfaces of three-dimensional topological insulators (TIs) are breaking new ground in fundamental quantum science and transformative technology. Yet a challenge remains on how to isolate and disentangle helical spin transport on the surface from bulk conduction. Here we show that selective midinfrared femtosecond p… ▽ More The recent discovery of topology-protected charge transport of ultimate thinness on surfaces of three-dimensional topological insulators (TIs) are breaking new ground in fundamental quantum science and transformative technology. Yet a challenge remains on how to isolate and disentangle helical spin transport on the surface from bulk conduction. Here we show that selective midinfrared femtosecond photoexcitation of exclusive intraband electronic transitions at low temperature underpins topological enhancement of terahertz (THz) surface transport in doped Bi2Se3, with no complication from interband excitations or need for controlled doping. The unique, hot electron state is characterized by conserved populations of surface/bulk bands and by frequency-dependent hot carrier cooling times that directly distinguish the faster surface channel than the bulk. We determine the topological enhancement ratio between bulk and surface scattering rates, i.e., $γ_\text{BS}/γ_\text{SS}\sim$3.80 in equilibrium. These behaviors are absent at elevated lattice temperatures and for high pumpphoton frequencies and uences. The selective, mid-infrared-induced THz conductivity provides a new paradigm to characterize TIs and may apply to emerging topological semimetals in order to separate the transport connected with the Weyl nodes from other bulk bands. △ Less

Submitted 9 May, 2018; originally announced May 2018.

Comments: Paper in review

Journal ref: Nature Communications, 10, 607 (2019)

MBE growth of 2H-MoTe2 and 1T'-MoTe2 on 3D substrates

Authors: Suresh Vishwanath, Aditya Sundar, Xinyu Liu, Angelica Azcatl, Edward Lochocki, Arthur R. Woll, Sergei Rouvimov, Wan Sik Hwang, Ning Lu, Xin Peng, Huai-Hsun Lien, John Weisenberger, Stephen McDonnell, Moon J. Kim, Margaret Dobrowolska, Jacek K Furdyna, Kyle Shen, Robert M. Wallace, Debdeep Jena, Huili Grace Xing

Abstract: MoTe2 is the least explored material in the Molybdenum-chalcogen family, which crystallizes in thermodynamically stable semiconducting 2H phase at \textless 500 C and 1T' metallic phase at higher temperatures. Molecular beam epitaxy (MBE) provides an unique opportunity to tackle the small electronegativity difference between Mo and Te while growing layer by layer away from thermodynamic equilibriu… ▽ More MoTe2 is the least explored material in the Molybdenum-chalcogen family, which crystallizes in thermodynamically stable semiconducting 2H phase at \textless 500 C and 1T' metallic phase at higher temperatures. Molecular beam epitaxy (MBE) provides an unique opportunity to tackle the small electronegativity difference between Mo and Te while growing layer by layer away from thermodynamic equilibrium. For a few-layer MoTe2 grown at a moderate rate of $\sim$6 mins per monolayer under varied Te:Mo flux ratio and substrate temperature, the boundary between the 2 phases in MBE grown MoTe2 on CaF2 is characterized using Reflection high-energy electron diffraction (RHEED), Raman spectroscopy and X-ray photoemission spectroscopy (XPS). Grazing incidence X-ray diffraction (GI-XRD) reveals a grain size of $\sim$90 Å and presence of twinned grains. XRD, transmission electron miscroscopy, RHEED, low energy electron diffraction along with lack of electrical conductivity modulation by field effect in MBE 2H-MoTe2 on GaAs (111) B show likelihood of excess Te incorporation in the films. Finally, thermal stability and air sensitivity of MBE 2H-MoTe2 is investigated by temperature dependent XRD and XPS, respectively. △ Less

Submitted 1 May, 2017; originally announced May 2017.

Comments: Six figure in main tex, 8 figures in SI and 4 tables in main text

Signatures of four-particle correlations associated with exciton-carrier interactions in coherent spectroscopy on bulk GaAs

Authors: D. Webber, B. L. Wilmer, X. Liu, M. Dobrowolska, J. K. Furdyna, A. D. Bristow, K. C. Hall

Abstract: Transient four-wave mixing studies of bulk GaAs under conditions of broad bandwidth excitation of primarily interband transitions have enabled four-particle correlations tied to degenerate (exciton-exciton) and nondegenerate (exciton-carrier) interactions to be studied. Real two-dimensional Fourier-transform spectroscopy (2DFTS) spectra reveal a complex response at the heavy-hole exciton emission… ▽ More Transient four-wave mixing studies of bulk GaAs under conditions of broad bandwidth excitation of primarily interband transitions have enabled four-particle correlations tied to degenerate (exciton-exciton) and nondegenerate (exciton-carrier) interactions to be studied. Real two-dimensional Fourier-transform spectroscopy (2DFTS) spectra reveal a complex response at the heavy-hole exciton emission energy that varies with the absorption energy, ranging from dispersive on the diagonal, through absorptive for low-energy interband transitions to dispersive with the opposite sign for interband transitions high above band gap. Simulations using a multilevel model augmented by many-body effects provide excellent agreement with the 2DFTS experiments and indicate that excitation-induced dephasing (EID) and excitation-induced shift (EIS) affect degenerate and nondegenerate interactions equivalently, with stronger exciton-carrier coupling relative to exciton-exciton coupling by approximately an order of magnitude. These simulations also indicate that EID effects are three times stronger than EIS in contributing to the coherent response of the semiconductor. △ Less

Submitted 20 May, 2016; originally announced May 2016.

Journal ref: Phys. Rev. B 94, 155450 (2016)

Magnetization Saturation Process in the Magnonic Anti-dot Structures Based on (Ga,Mn)As: A Magnetometric Study

Authors: K. Dziatkowski, W. P. Staszewski, R. Bożek, J. Szczytko, J. Gosk, A. Twardowski, X. Liu, J. K. Furdyna

Abstract: Applicability of dilute magnetic semiconductors (DMS) in electronic devices relies upon the understanding and control of their magnetic anisotropy. This paper explores one of the ways in engineering magnetic anisotropy in epitaxial layers of DMS by forming them into magnonic structures. For this purpose the canonical ferromagnetic DMS, namely (Ga,Mn)As, is employed. The anti-dot systems based on (… ▽ More Applicability of dilute magnetic semiconductors (DMS) in electronic devices relies upon the understanding and control of their magnetic anisotropy. This paper explores one of the ways in engineering magnetic anisotropy in epitaxial layers of DMS by forming them into magnonic structures. For this purpose the canonical ferromagnetic DMS, namely (Ga,Mn)As, is employed. The anti-dot systems based on (Ga,Mn)As layers of various thicknesses are fabricated with focused ion beam apparatus and studied by means of microscopy as well as magnetometry. The magnetometric data - collected along two nonequivalent in-plane crystallographic directions of (Ga,Mn)As: [110] and [1-10] - shows the effect of structuring on high-field magnetization process, whereas no significant change of the width of hysteresis loop in anti-dot samples is observed. △ Less

Submitted 28 April, 2016; originally announced April 2016.

Comments: 5 pages, 6 figures

Four-wave mixing in perovskite photovoltaic materials reveals long dephasing times and weaker many-body interactions than GaAs

Authors: Samuel A. March, Drew B. Riley, Charlotte Clegg, Daniel Webber, Xinyu Liu, Margaret Dobrowolska, Jacek K. Furdyna, Ian G. Hill, Kimberley C. Hall

Abstract: Perovksite semiconductors have shown promise for low-cost solar cells, lasers and photodetectors, yet their fundamental photophysical properties are not well understood. Recent observations of a low ($\sim$few meV) exciton binding energy and evidence of hot phonon effects in the room temperature phase suggest that perovskites are much closer to inorganic semiconductors than the absorber layers in… ▽ More Perovksite semiconductors have shown promise for low-cost solar cells, lasers and photodetectors, yet their fundamental photophysical properties are not well understood. Recent observations of a low ($\sim$few meV) exciton binding energy and evidence of hot phonon effects in the room temperature phase suggest that perovskites are much closer to inorganic semiconductors than the absorber layers in traditional organic photovoltaics, signaling the need for experiments that shed light on the placement of perovskite materials within the spectrum of semiconductors used in optoelectronics and photovoltaics. Here we use four-wave mixing (FWM) to contrast the coherent optical response of CH$_3$NH$_3$PbI$_3$ thin films and crystalline GaAs. At carrier densities relevant for solar cell operation, our results show that carriers interact surprisingly weakly via the Coulomb interaction in perovskite, much weaker than in inorganic semiconductors. These weak many-body effects lead to a dephasing time in CH$_3$NH$_3$PbI$_3$ $\sim$3 times longer than in GaAs. Our results also show that the strong enhancement of the exciton FWM signal tied to excitation-induced dephasing in GaAs and other III-V semiconductors does not occur in perovskite due to weak exciton-carrier scattering interactions. △ Less

Submitted 22 September, 2016; v1 submitted 16 February, 2016; originally announced February 2016.

Comments: Added 10 K results to previous version (Feb 16, 2016)

Journal ref: ACS Photonics, 2017, 4, 1515

Collective magnetization dynamics in ferromagnetic (Ga,Mn)As mediated by photo-excited carriers

Authors: Hang Li, Xinyu Liu, Ying-Yuan Zhou, Jacek K. Furdyna, Xinhui Zhang

Abstract: We present a study of photo-excited magnetization dynamics in ferromagnetic (Ga,Mn)As films observed by time-resolved magneto-optical measurements. The magnetization precession triggered by linearly polarized optical pulses in the absence of an external field shows a strong dependence on photon frequency when the photo-excitation energy approaches the band-edge of (Ga,Mn)As. This can be understood… ▽ More We present a study of photo-excited magnetization dynamics in ferromagnetic (Ga,Mn)As films observed by time-resolved magneto-optical measurements. The magnetization precession triggered by linearly polarized optical pulses in the absence of an external field shows a strong dependence on photon frequency when the photo-excitation energy approaches the band-edge of (Ga,Mn)As. This can be understood in terms of magnetic anisotropy modulation by both laser heating of the sample and by hole-induced non-thermal paths. Our findings provide a means for identifying the transition of laser-triggered magnetization dynamics from thermal to non-thermal mechanisms, a result that is of importance for ultrafast optical spin manipulation in ferromagnetic materials via non-thermal paths. △ Less

Submitted 9 January, 2015; originally announced January 2015.

Comments: 11 pages, 9 figures

Journal ref: Phys. Rev. B 91, 195204 (2015)

Molecular beam epitaxial growth of MoSe2 on graphite, CaF2 and graphene

Authors: Suresh Vishwanath, Xinyu Liu, Sergei Rouvimov, Patrick C. Mende, Angelica Azcatl, Stephen McDonnell, Robert M. Wallace, Randall M. Feenstra, Jacek K. Furdyna, Debdeep Jena, Huili Grace Xing

Abstract: We report the structural and optical properties of molecular beam epitaxy (MBE) grown 2-dimensional (2D) material molybdenum diselenide (MoSe2) on graphite, CaF2 and epitaxial graphene. Extensive characterizations reveal that 2H- MoSe2 grows by van-der-Waals epitaxy on all 3 substrates with a preferred crystallographic orientation and a Mo:Se ratio of 1:2. Photoluminescence at room temperature (~1… ▽ More We report the structural and optical properties of molecular beam epitaxy (MBE) grown 2-dimensional (2D) material molybdenum diselenide (MoSe2) on graphite, CaF2 and epitaxial graphene. Extensive characterizations reveal that 2H- MoSe2 grows by van-der-Waals epitaxy on all 3 substrates with a preferred crystallographic orientation and a Mo:Se ratio of 1:2. Photoluminescence at room temperature (~1.56 eV) is observed in monolayer MoSe2 on both CaF2 and epitaxial graphene. The band edge absorption is very sharp, <60 meV over 3 decades. Overcoming the observed small grains by promoting mobility of Mo atoms would make MBE a powerful technique to achieve high quality 2D materials and heterostructures. △ Less

Submitted 18 December, 2014; originally announced December 2014.

Comments: 5 Figures in main paper and 6 figures in supplementary information

Ultrafast Probes of Nonequilibrium Hole Spin Relaxation in Ferromagnetic Semiconductor GaMnAs

Authors: Aaron Patz, Tianqi Li, Xinyu Liu, Jacek K. Furdyna, Ilias E. Perakis, Jigang Wang

Abstract: We directly measure the hole spin lifetime in ferromagnetic GaMnAs via time- and polarization-resolved spectroscopy. Below the Curie temperature Tc, an ultrafast photoexcitation with linearly-polarized light is shown to create a non-equilibrium hole spin population via the dynamical polarization of holes through p-d exchange scattering with ferromagnetically-ordered Mn spins, and we characterize t… ▽ More We directly measure the hole spin lifetime in ferromagnetic GaMnAs via time- and polarization-resolved spectroscopy. Below the Curie temperature Tc, an ultrafast photoexcitation with linearly-polarized light is shown to create a non-equilibrium hole spin population via the dynamical polarization of holes through p-d exchange scattering with ferromagnetically-ordered Mn spins, and we characterize their relaxation dynamics. The observed relaxation consists of a distinct three-step recovery : (i) femtosecond (fs) hole spin relaxation ~ $160-200 fs, (ii) picosecond (ps) hole energy relaxation ~ 1-2 ps, and (iii) a coherent, damped Mn spin precession with a period of ~ 250 ps. The transient amplitude of the hole spin component diminishes with increasing temperature, directly following the ferromagnetic order, while the hole energy amplitude shows negligible temperature change, consistent with our interpretation. Our results thus establish the hole spin lifetimes in ferromagnetic semiconductors and demonstrate a novel spectroscopy method for studying non-equilibrium hole spins in the presence of correlation and magnetic order. △ Less

Submitted 25 November, 2014; originally announced November 2014.

Journal ref: Physical Review B 91, 155108 (2015)

Rapid diffusion of electrons in GaMnAs

Authors: C. P. Weber, Eric A. Kittlaus, Kassandra B. Mattia, Christopher J. Waight, J. Hagmann, X. Liu, M. Dobrowolska, J. K. Furdyna

Abstract: We report ultrafast transient-grating measurements, above and below the Curie temperature, of the dilute ferromagnetic semiconductor (Ga,Mn)As containing 6% Mn. At 80 K (15 K), we observe that photoexcited electrons in the conduction band have a lifetime of 8 ps (5 ps) and diffuse at about 70 cm2/s (60 cm2/s). Such rapid diffusion requires either an electronic mobility exceeding 7,700 cm2/Vs or a… ▽ More We report ultrafast transient-grating measurements, above and below the Curie temperature, of the dilute ferromagnetic semiconductor (Ga,Mn)As containing 6% Mn. At 80 K (15 K), we observe that photoexcited electrons in the conduction band have a lifetime of 8 ps (5 ps) and diffuse at about 70 cm2/s (60 cm2/s). Such rapid diffusion requires either an electronic mobility exceeding 7,700 cm2/Vs or a conduction-band effective mass less than half the GaAs value. Our data suggest that neither the scattering rate nor the effective mass of the (Ga,Mn)As conduction band differs significantly from that of GaAs. △ Less

Submitted 7 June, 2013; v1 submitted 1 March, 2013; originally announced March 2013.

Comments: 5 pages, 3 figures. Differs from the previous version in incorporating additional data and changes made during the review process. Differs from the published version in including section headings and in omitting AIP copy-edits. No substantial differences in scientific conclusions from either version

Journal ref: Appl. Phys. Lett. 102, 182402 (2013)

Magnetization precession induced by quasi-transverse picosecond strain pulses in (311) ferromagnetic (Ga,Mn)As

Authors: M. Bombeck, J. V. Jäger, A. V. Scherbakov, T. Linnik, D. R. Yakovlev, X. Liu, J. K. Furdyna, A. V. Akimov, M. Bayer

Abstract: Quasi-longitudinal and quasi-transverse picosecond strain pulses injected into a ferromagnetic (311) (Ga,Mn)As film induce dynamical shear strain in the film, thereby modulating the magnetic anisotropy and inducing resonant precession of the magnetization at a frequency ~10 GHz. The modulation of the out-of-plane magnetization component by the quasitransverse strain reaches amplitudes as large as… ▽ More Quasi-longitudinal and quasi-transverse picosecond strain pulses injected into a ferromagnetic (311) (Ga,Mn)As film induce dynamical shear strain in the film, thereby modulating the magnetic anisotropy and inducing resonant precession of the magnetization at a frequency ~10 GHz. The modulation of the out-of-plane magnetization component by the quasitransverse strain reaches amplitudes as large as 10% of the equilibrium magnetization. Our theoretical analysis is in good agreement with the observed results, thus providing a strategy for ultrafast magnetization control in ferromagnetic films by strain pulses. △ Less

Submitted 10 January, 2013; originally announced January 2013.

Comments: 14 pages, 4 figures

Response to the comment of K.W. Edmonds et al. on the article 'Controlling the Curie temperature in (Ga,Mn)As through location of the Fermi level within the impurity band'

Authors: M. Dobrowolska, X. Liu, J. K. Furdyna, M. Berciu, K. M. Yu, W. Walukiewicz

Abstract: Although we seriously disagree with many of the points raised in the comment by Edmonds et al., we feel that it is valuable and timely, since comparison of this comment and our paper serves to underscore an important property of the ferromagnetic semiconductor (Ga,Mn)As in thin film form. Although we seriously disagree with many of the points raised in the comment by Edmonds et al., we feel that it is valuable and timely, since comparison of this comment and our paper serves to underscore an important property of the ferromagnetic semiconductor (Ga,Mn)As in thin film form. △ Less

Submitted 16 November, 2012; originally announced November 2012.

Critical role of next-nearest-neighbor interlayer interaction in magnetic behavior of magnetic/nonmagnetic multilayers

Authors: Sunjae Chung, Sangyep Lee, Taehee Yoo, Hakjoon Lee, J. -H. Chung, M. S. Choi, Sanghoon Lee, X. Liu, J. K. Furdyna, Jae-Ho Han, Hyun-Woo Lee, Kyung-Jin Lee

Abstract: We report magnetoresistance data in magnetic semiconductor multilayers, which exhibit a clear step-wise behavior as a function of external field. We attribute this highly non-trivial step-wise behavior to next-nearest-neighbor interlayer exchange coupling. Our microscopic calculation suggests that this next-nearest-neighbor coupling can be as large as 24% of the nearest-neighbor coupling. It is ar… ▽ More We report magnetoresistance data in magnetic semiconductor multilayers, which exhibit a clear step-wise behavior as a function of external field. We attribute this highly non-trivial step-wise behavior to next-nearest-neighbor interlayer exchange coupling. Our microscopic calculation suggests that this next-nearest-neighbor coupling can be as large as 24% of the nearest-neighbor coupling. It is argued that such unusually long-range interaction is made possible by the quasi-one-dimensional nature of the system and by the long Fermi wavelength characteristic of magnetic semiconductors. △ Less

Submitted 8 September, 2012; originally announced September 2012.

Observation of the fractional ac Josephson effect: the signature of Majorana particles

Authors: Leonid P. Rokhinson, Xinyu Liu, Jacek K. Furdyna

Abstract: Topological superconductors which support Majorana fermions are thought to be realized in one-dimensional semiconducting wires coupled to a superconductor. Such excitations are expected to exhibit non-Abelian statistics and can be used to realize quantum gates that are topologically protected from local sources of decoherence. Here we report the observation of the fractional a.c. Josephson effect… ▽ More Topological superconductors which support Majorana fermions are thought to be realized in one-dimensional semiconducting wires coupled to a superconductor. Such excitations are expected to exhibit non-Abelian statistics and can be used to realize quantum gates that are topologically protected from local sources of decoherence. Here we report the observation of the fractional a.c. Josephson effect in a hybrid semiconductor/superconductor InSb/Nb nanowire junction, a hallmark of topological matter. When the junction is irradiated with a radio-frequency f in the absence of an external magnetic field, quantized voltage steps (Shapiro steps) with a height hf/2e are observed, as is expected for conventional superconductor junctions, where the supercurrent is carried by charge-2e Cooper pairs. At high magnetic fields the height of the first Shapiro step is doubled to hf/e, suggesting that the supercurrent is carried by charge-e quasiparticles. This is a unique signature of Majorana fermions, elusive particles predicted ca. 80 years ago. △ Less

Submitted 23 August, 2012; v1 submitted 18 April, 2012; originally announced April 2012.

Comments: the original manuscript submission date is March 20, 2012

Journal ref: Nature Physics 8, 795 (2012)

Origin of Magnetic Circular Dichroism in GaMnAs: Giant Zeeman Splitting versus Spin Dependent Density of States

Authors: M. Berciu, R. Chakarvorty, Y. Y. Zhou, M. T. Alam, K. Traudt, R. Jakiela, A. Barcz, T. Wojtowicz, X. Liu, J. K. Furdyna, M. Dobrowolska

Abstract: We present a unified interpretation of experimentally observed magnetic circular dichroism (MCD) in the ferromagnetic semiconductor (Ga,Mn)As, based on theoretical arguments, which demonstrates that MCD in this material arises primarily from a difference in the density of spin-up and spin-down states in the valence band brought about by the presence of the Mn impurity band, rather than being prima… ▽ More We present a unified interpretation of experimentally observed magnetic circular dichroism (MCD) in the ferromagnetic semiconductor (Ga,Mn)As, based on theoretical arguments, which demonstrates that MCD in this material arises primarily from a difference in the density of spin-up and spin-down states in the valence band brought about by the presence of the Mn impurity band, rather than being primarily due to the Zeeman splitting of electronic states. △ Less

Submitted 8 March, 2012; originally announced March 2012.

Comments: 4+ pages, 4 figures

Journal ref: Phys. Rev. Lett. 102, 247202 (2009)

Controlling Curie temperature in (Ga,Ms)As through location of the Fermi level within the impurity band

Authors: M. Dobrowolska, K. Tivakornsasithorn, X. Liu, J. K. Furdyna, M. Berciu, K. M. Yu, W. Walukiewicz

Abstract: The ferromagnetic semiconductor (Ga,Mn)As has emerged as the most studied material for prototype applications in semiconductor spintronics. Because ferromagnetism in (Ga,Mn)As is hole-mediated, the nature of the hole states has direct and crucial bearing on its Curie temperature TC. It is vigorously debated, however, whether holes in (Ga,Mn)As reside in the valence band or in an impurity band. In… ▽ More The ferromagnetic semiconductor (Ga,Mn)As has emerged as the most studied material for prototype applications in semiconductor spintronics. Because ferromagnetism in (Ga,Mn)As is hole-mediated, the nature of the hole states has direct and crucial bearing on its Curie temperature TC. It is vigorously debated, however, whether holes in (Ga,Mn)As reside in the valence band or in an impurity band. In this paper we combine results of channeling experiments, which measure the concentrations both of Mn ions and of holes relevant to the ferromagnetic order, with magnetization, transport, and magneto-optical data to address this issue. Taken together, these measurements provide strong evidence that it is the location of the Fermi level within the impurity band that determines TC through determining the degree of hole localization. This finding differs drastically from the often accepted view that TC is controlled by valence band holes, thus opening new avenues for achieving higher values of TC. △ Less

Submitted 8 March, 2012; originally announced March 2012.

Comments: 5 figures, supplementary material included

Selective spin wave excitation in ferromagnetic (Ga,Mn)As layers by picosecond strain pulses

Authors: M. Bombeck, A. S. Salasyuk, B. A. Glavin, A. V. Scherbakov, C. Brüggemann, D. R. Yakovlev, V. F. Sapega, X. Liu, J. K. Furdyna, A. V. Akimov, M. Bayer

Abstract: We demonstrate selective excitation of a spin wave mode in a ferromagnetic (Ga,Mn)As film by picosecond strain pulses. For a certain range of magnetic fields applied in the layer plane only a single frequency is detected for the magnetization precession. We explain this selectivity of spin mode excitation by the necessity of spatial matching of magnon and phonon eigenfunctions, which represents a… ▽ More We demonstrate selective excitation of a spin wave mode in a ferromagnetic (Ga,Mn)As film by picosecond strain pulses. For a certain range of magnetic fields applied in the layer plane only a single frequency is detected for the magnetization precession. We explain this selectivity of spin mode excitation by the necessity of spatial matching of magnon and phonon eigenfunctions, which represents a selection rule analogous to momentum conservation for magnon-phonon interaction in bulk ferromagnetic materials. △ Less

Submitted 14 December, 2011; originally announced December 2011.

Comments: 16 pages, 3 figures, submitted to PRL

Theory of magnetization precession induced by a picosecond strain pulse in ferromagnetic semiconductor (Ga,Mn)As

Authors: T. L. Linnik, A. V. Scherbakov, D. R. Yakovlev, X. Liu, J. K. Furdyna, M. Bayer

Abstract: A theoretical model of the coherent precession of magnetization excited by a picosecond acoustic pulse in a ferromagnetic semiconductor layer of (Ga,Mn)As is developed. The short strain pulse injected into the ferromagnetic layer modifies the magnetocrystalline anisotropy resulting in a tilt of the equilibrium orientation of magnetization and subsequent magnetization precession. We derive a quanti… ▽ More A theoretical model of the coherent precession of magnetization excited by a picosecond acoustic pulse in a ferromagnetic semiconductor layer of (Ga,Mn)As is developed. The short strain pulse injected into the ferromagnetic layer modifies the magnetocrystalline anisotropy resulting in a tilt of the equilibrium orientation of magnetization and subsequent magnetization precession. We derive a quantitative model of this effect using the Landau-Lifshitz equation for the magnetization that is precessing in the time-dependent effective magnetic field. After developing the general formalism, we then provide a numerical analysis for a certain structure and two typical experimental geometries in which an external magnetic field is applied either along the hard or the easy magnetization axis. As a result we identify three main factors, which determine the precession amplitude: the magnetocrystalline anisotropy of the ferromagnetic layer, its thickness, and the strain pulse parameters. △ Less

Submitted 17 November, 2011; originally announced November 2011.

Time-resolved second harmonic generation study of buried semiconductor heterointerfaces using soliton-induced transparency

Authors: Y. D. Glinka, N. H. Tolk, J. K. Furdyna

Abstract: The transient second harmonic generation and linear optical reflectivity signals measured simultaneously in reflection from GaAs/GaSb/InAs and GaAs/GaSb heterostructures revealed a new mechanism for creating self-induced transparency in narrow bandgap semiconductors at low temperatures, which is based on the dual-frequency electro-optic soliton propagation. This allows the ultrafast carrier dynami… ▽ More The transient second harmonic generation and linear optical reflectivity signals measured simultaneously in reflection from GaAs/GaSb/InAs and GaAs/GaSb heterostructures revealed a new mechanism for creating self-induced transparency in narrow bandgap semiconductors at low temperatures, which is based on the dual-frequency electro-optic soliton propagation. This allows the ultrafast carrier dynamics at buried semiconductor heterointerfaces to be studied. △ Less

Submitted 23 October, 2011; originally announced October 2011.

Crossover critical behavior of Ga1-xMnxAs

Authors: Sh. U. Yuldashev, Kh. T. Igamberdiev, Y. H. Kwon, Sanghoon Lee, X. Liu, J. K. Furdyna, A. G. Shashkov, T. W. Kang

Abstract: The critical behavior of Ga1-xMnxAs in a close vicinity of the Curie temperature was experimentally studied by using the thermal diffusivity measurements. Taking into account that the inverse of the thermal diffusivity has the same critical behavior as the specific heat, the critical exponent α for the samples investigated has been determined. With approaching close to the critical temperature, th… ▽ More The critical behavior of Ga1-xMnxAs in a close vicinity of the Curie temperature was experimentally studied by using the thermal diffusivity measurements. Taking into account that the inverse of the thermal diffusivity has the same critical behavior as the specific heat, the critical exponent α for the samples investigated has been determined. With approaching close to the critical temperature, the crossover from the mean-field-like to the Ising-like critical behavior has been observed. From the crossover behavior the values of the Ginzburg number and the exchange interaction length in Ga1-xMnxAs with different concentrations of Mn were determined. △ Less

Submitted 4 August, 2011; originally announced August 2011.

Comments: 17 pages, 5 figures

Coherent magnetization precession in ferromagnetic (Ga,Mn)As induced by picosecond acoustic pulses

Authors: A. V. Scherbakov, A. S. Salasyuk, A. V. Akimov, X. Liu, M. Bombeck, C. Brüggemann, D. R. Yakovlev, V. F. Sapega, J. K. Furdyna, M. Bayer

Abstract: We show that the magnetization of a thin ferromagnetic (Ga,Mn)As layer can be modulated by picosecond acoustic pulses. In this approach a picosecond strain pulse injected into the structure induces a tilt of the magnetization vector M, followed by the precession of M around its equilibrium orientation. This effect can be understood in terms of changes in magneto-crystalline anisotropy induced by t… ▽ More We show that the magnetization of a thin ferromagnetic (Ga,Mn)As layer can be modulated by picosecond acoustic pulses. In this approach a picosecond strain pulse injected into the structure induces a tilt of the magnetization vector M, followed by the precession of M around its equilibrium orientation. This effect can be understood in terms of changes in magneto-crystalline anisotropy induced by the pulse. A model where only one anisotropy constant is affected by the strain pulse provides a good description of the observed time-dependent response. △ Less

Submitted 21 June, 2010; originally announced June 2010.

Comments: 13 pages, 3 figures

Evidence for reversible control of magnetization in a ferromagnetic material via spin-orbit magnetic field

Authors: A. Chernyshov, M. Overby, X. Liu, J. K. Furdyna, Y. Lyanda-Geller, L. P. Rokhinson

Abstract: Conventional computer electronics creates a dichotomy between how information is processed and how it is stored. Silicon chips process information by controlling the flow of charge through a network of logic gates. This information is then stored, most commonly, by encoding it in the orientation of magnetic domains of a computer hard disk. The key obstacle to a more intimate integration of magne… ▽ More Conventional computer electronics creates a dichotomy between how information is processed and how it is stored. Silicon chips process information by controlling the flow of charge through a network of logic gates. This information is then stored, most commonly, by encoding it in the orientation of magnetic domains of a computer hard disk. The key obstacle to a more intimate integration of magnetic materials into devices and circuit processing information is a lack of efficient means to control their magnetization. This is usually achieved with an external magnetic field or by the injection of spin-polarized currents. The latter can be significantly enhanced in materials whose ferromagnetic properties are mediated by charge carriers. Among these materials, conductors lacking spatial inversion symmetry couple charge currents to spin by intrinsic spin-orbit (SO) interactions, inducing nonequilibrium spin polarization tunable by local electric fields. Here we show that magnetization of a ferromagnet can be reversibly manipulated by the SO-induced polarization of carrier spins generated by unpolarized currents. Specifically, we demonstrate domain rotation and hysteretic switching of magnetization between two orthogonal easy axes in a model ferromagnetic semiconductor. △ Less

Submitted 14 July, 2009; v1 submitted 16 December, 2008; originally announced December 2008.

Comments: 10 pages including supplemental material

Journal ref: Nature Physics 5, 656 - 659 (2009)

Ion-beam modification of the magnetic properties of GaMnAs epilayers

Authors: E. H. C. P. Sinnecker, G. M. Penello, T. G. Rappoport, M. M. Sant'Anna, D. E. R. Souza, M. P. Pires, X. Liu, J. K. Furdyna

Abstract: We study the controlled introduction of defects in GaMnAs by irradiating the samples with energetic ion beams, which modify the magnetic properties of the DMS. Our study focuses on the low-carrier-density regime, starting with as-grown GaMnAs films and decreasing even further the number of carriers, through a sequence of irradiation doses. We did a systematic study of magnetization as a function o… ▽ More We study the controlled introduction of defects in GaMnAs by irradiating the samples with energetic ion beams, which modify the magnetic properties of the DMS. Our study focuses on the low-carrier-density regime, starting with as-grown GaMnAs films and decreasing even further the number of carriers, through a sequence of irradiation doses. We did a systematic study of magnetization as a function of temperature and of the irradiation ion dose. We also performed in-situ room temperature resistivity measurements as a function of the ion dose. We observe that both magnetic and transport properties of the samples can be experimentally manipulated by controlling the ion-beam parameters. For highly irradiated samples, the magnetic measurements indicate the formation of magnetic clusters together with a transition to an insulating state. The experimental data are compared with mean-field calculations for magnetization. The independent control of disorder and carrier density in the calculations allows further insight on the individual role of this two factors in the ion-beam-induced modification of GaMnAs. △ Less

Submitted 10 June, 2010; v1 submitted 19 November, 2008; originally announced November 2008.

Comments: 9 pages, 9 figures

Journal ref: Phys. Rev. B 81, 245203 (2010)

Carrier-mediated antiferromagnetic interlayer exchange coupling in diluted magnetic semiconductor multilayers Ga$_{1-x}$Mn$_x$As/GaAs:Be

Authors: J. -H. Chung, S. J. Chung, Sanghoon Lee, B. J. Kirby, J. A. Borchers, Y. J. Cho, X. Liu, J. K. Furdyna

Abstract: We use neutron reflectometry to investigate the interlayer exchange coupling between Ga$_{0.97}$Mn$_{0.03}$As ferromagnetic semiconductor layers separated by non-magnetic Be-doped GaAs spacers. Polarized neutron reflectivity measured below the Curie temperature of Ga$_{0.97}$Mn$_{0.03}$As reveals a characteristic splitting at the wave vector corresponding to twice the multilayer period, indicati… ▽ More We use neutron reflectometry to investigate the interlayer exchange coupling between Ga$_{0.97}$Mn$_{0.03}$As ferromagnetic semiconductor layers separated by non-magnetic Be-doped GaAs spacers. Polarized neutron reflectivity measured below the Curie temperature of Ga$_{0.97}$Mn$_{0.03}$As reveals a characteristic splitting at the wave vector corresponding to twice the multilayer period, indicating that the coupling between the ferromagnetic layers are antiferromagnetic (AFM). When the applied field is increased to above the saturation field, this AFM coupling is suppressed. This behavior is not observed when the spacers are undoped, suggesting that the observed AFM coupling is mediated by charge carriers introduced via Be doping. The behavior of magnetization of the multilayers measured by DC magnetometry is consistent with the neutron reflectometry results. △ Less

Submitted 5 September, 2008; originally announced September 2008.

Comments: 4 pages, 4 figures

Mechanical and Electronic Properties of Ferromagnetic GaMnAs Using Ultrafast Coherent Acoustic Phonons

Authors: J. Qi, J. A. Yan, H. Park, A. Steigerwald, Y. Xu, S. N. Gilbert, X. Liu, J. K. Furdyna, S. T. Pantelides, N. Tolk

Abstract: Ultrafast two-color pump-probe measurements, involving coherent acoustic phonon (CAP) waves, have provided information simultaneously on the mechanical properties and on the electronic structure of ferromagnetic GaMnAs. The elastic constant C11 of Ga1-xMnxAs (0.03<x<0.07) are observed to be systematically smaller than those of GaAs. Both C11 and Vs of GaMnAs are found to increase with temperature… ▽ More Ultrafast two-color pump-probe measurements, involving coherent acoustic phonon (CAP) waves, have provided information simultaneously on the mechanical properties and on the electronic structure of ferromagnetic GaMnAs. The elastic constant C11 of Ga1-xMnxAs (0.03<x<0.07) are observed to be systematically smaller than those of GaAs. Both C11 and Vs of GaMnAs are found to increase with temperature (78 K<T<295 K), again in contrast to the opposite behavior in GaAs. In addition, the fundamental bandgap (at E0 critical point) of Ga1-xMnxAs is found to shift slightly to higher energies with Mn concentration. △ Less

Submitted 14 September, 2012; v1 submitted 10 July, 2008; originally announced July 2008.

Journal ref: Phys. Rev. B 81, 115208 (2010)

Memory Effect in the Photoinduced Femtosecond Rotation of Magnetization in the Ferromagnetic Semiconductor GaMnAs

Authors: J. Wang, I. Cotoros, X. Liu, J. Chovan, J. K. Furdyna, I. E. Perakis, D. S. Chemla

Abstract: We report a femtosecond response in photoinduced magnetization rotation in the ferromagnetic semiconductor GaMnAs, which allows for detection of a four-state magnetic memory at the femtosecond time scale. The temporal profile of this cooperative magnetization rotation exhibits a discontinuity that reveals two distinct temporal regimes, marked by the transition from a highly non-equilibrium, carr… ▽ More We report a femtosecond response in photoinduced magnetization rotation in the ferromagnetic semiconductor GaMnAs, which allows for detection of a four-state magnetic memory at the femtosecond time scale. The temporal profile of this cooperative magnetization rotation exhibits a discontinuity that reveals two distinct temporal regimes, marked by the transition from a highly non-equilibrium, carrier-mediated regime within the first 200 fs, to a thermal, lattice-heating picosecond regime. △ Less

Submitted 22 April, 2008; originally announced April 2008.

Two-step model versus one-step model of the inter-polarization conversion and statistics of CdSe/ZnSe quantum dot elongations

Authors: A. V. Koudinov, B. R. Namozov, Yu. G. Kusrayev, S. Lee, M. Dobrowolska, J. K. Furdyna

Abstract: The magneto-optical inter-polarization conversions by a layer of quantum dots have been investigated. Various types of polarization response of the sample were observed as a function of external magnetic field and of the orientation of the sample. The full set of experimental dependences is analyzed in terms of a one-step and a two-step model of spin evolution. The angular distribution of the qu… ▽ More The magneto-optical inter-polarization conversions by a layer of quantum dots have been investigated. Various types of polarization response of the sample were observed as a function of external magnetic field and of the orientation of the sample. The full set of experimental dependences is analyzed in terms of a one-step and a two-step model of spin evolution. The angular distribution of the quantum dots over the directions of elongation in the plane of the sample is taken into account in terms of the two models, and the model predictions are compared with experimental observations. △ Less

Submitted 8 April, 2008; v1 submitted 31 March, 2008; originally announced March 2008.

Journal ref: Phys. Rev. B 78, 045309 (2008)

Distribution of magnetic domain pinning fields in GaMnAs ferromagnetic films

Authors: Jungtaek Kim, D. Y. Shin, Sanghoon Lee, X. Liu, J. K. Furdyna

Abstract: Using the angular dependence of the planar Hall effect in GaMnAs ferromagnetic films, we were able to determine the distribution of magnetic domain pinning fields in this material. Interestingly, there is a major difference between the pinning field distribution in as-grown and in annealed films, the former showing a strikingly narrower distribution than the latter. This conspicuous difference c… ▽ More Using the angular dependence of the planar Hall effect in GaMnAs ferromagnetic films, we were able to determine the distribution of magnetic domain pinning fields in this material. Interestingly, there is a major difference between the pinning field distribution in as-grown and in annealed films, the former showing a strikingly narrower distribution than the latter. This conspicuous difference can be attributed to the degree of non-uniformity of magnetic anisotropy in both types of films. This finding provides a better understanding of the magnetic domain landscape in GaMnAs that has been the subject of intense debate. △ Less

Submitted 5 March, 2008; originally announced March 2008.

An extensive comparison of anisotropies in MBE grown (Ga,Mn)As material

Authors: C. Gould, S. Mark, K. Pappert, G. Dengel, J. Wenisch, R. P. Campion, A. W. Rushforth, D. Chiba, Z. Li, X. Liu, W. Van Roy, H. Ohno, J. K. Furdyna, B. Gallagher, K. Brunner, G. Schmidt, L. W. Molenkamp

Abstract: This paper reports on a detailed magnetotransport investigation of the magnetic anisotropies of (Ga,Mn)As layers produced by various sources worldwide. Using anisotropy fingerprints to identify contributions of the various higher order anisotropy terms, we show that the presence of both a [100] and a [110] uniaxial anisotropy in addition to the primary ([100] + [010]) anisotropy is common to all… ▽ More This paper reports on a detailed magnetotransport investigation of the magnetic anisotropies of (Ga,Mn)As layers produced by various sources worldwide. Using anisotropy fingerprints to identify contributions of the various higher order anisotropy terms, we show that the presence of both a [100] and a [110] uniaxial anisotropy in addition to the primary ([100] + [010]) anisotropy is common to all medium doped (Ga,Mn)As layers typically used in transport measurement, with the amplitude of these uniaxial terms being characteristic of the individual layers. △ Less

Submitted 28 February, 2008; originally announced February 2008.

GaMnAs-based hybrid multiferroic memory device

Authors: M. Overby, A. Chernyshov, L. P. Rokhinson, X. Liu, J. K. Furdyna

Abstract: A rapidly developing field of spintronics is based on the premise that substituting charge with spin as a carrier of information can lead to new devices with lower power consumption, non-volatility and high operational speed. Despite efficient magnetization detection, magnetization manipulation is primarily performed by current-generated local magnetic fields and is very inefficient. Here we rep… ▽ More A rapidly developing field of spintronics is based on the premise that substituting charge with spin as a carrier of information can lead to new devices with lower power consumption, non-volatility and high operational speed. Despite efficient magnetization detection, magnetization manipulation is primarily performed by current-generated local magnetic fields and is very inefficient. Here we report a novel non-volatile hybrid multiferroic memory cell with electrostatic control of magnetization based on strain-coupled GaMnAs ferromagnetic semiconductor and a piezoelectric material. We use the crystalline anisotropy of GaMnAs to store information in the orientation of the magnetization along one of the two easy axes, which is monitored via transverse anisotropic magnetoresistance. The magnetization orientation is switched by applying voltage to the piezoelectric material and tuning magnetic anisotropy of GaMnAs via the resulting stress field. △ Less

Submitted 28 January, 2008; originally announced January 2008.

Comments: 4 pages, 5 figures

Nanoscale spin-polarization in dilute magnetic semiconductor (In,Mn)Sb

Authors: A. Geresdi, A. Halbritter, M. Csontos, Sz. Csonka, G. Mihaly, T. Wojtowicz, X. Liu, B. Janko, J. K. Furdyna

Abstract: Results of point contact Andreev reflection (PCAR) experiments on (In,Mn)Sb are presented and analyzed in terms of current models of charge conversion at a superconductor-ferromagnet interface. We investigate the influence of surface transparency, and study the crossover from ballistic to diffusive transport regime as contact size is varied. Application of a Nb tip to a (In,Mn)Sb sample with Cur… ▽ More Results of point contact Andreev reflection (PCAR) experiments on (In,Mn)Sb are presented and analyzed in terms of current models of charge conversion at a superconductor-ferromagnet interface. We investigate the influence of surface transparency, and study the crossover from ballistic to diffusive transport regime as contact size is varied. Application of a Nb tip to a (In,Mn)Sb sample with Curie temperature Tc of 5.4 K allowed the determination of spin-polarization when the ferromagnetic phase transition temperature is crossed. We find a striking difference between the temperature dependence of the local spin polarization and of the macroscopic magnetization, and demonstrate that nanoscale clusters with magnetization close to the saturated value are present even well above the magnetic phase transition temperature. △ Less

Submitted 9 January, 2008; originally announced January 2008.

Comments: 4 pages

Inelastic Scattering and Spin Polarization in Dilute Magnetic Semiconductor (Ga,Mn)Sb

Authors: Raghava P. Panguluri, B. Nadgorny, T. Wojtowicz, X. Liu, J. K. Furdyna

Abstract: The Point Contact Andreev Reflection (PCAR) technique has already been used to measure the spin polarization of some of the dilute magnetic semiconductors, such as narrow-band (In,Mn)Sb, as well as wider gap (Ga,Mn)As. While in (In,Mn)Sb conventional Andreev reflection has been demonstrated, in (Ga,Mn)As quasiparticle density of states (DOS) broadening has been observed, possibly due to inelasti… ▽ More The Point Contact Andreev Reflection (PCAR) technique has already been used to measure the spin polarization of some of the dilute magnetic semiconductors, such as narrow-band (In,Mn)Sb, as well as wider gap (Ga,Mn)As. While in (In,Mn)Sb conventional Andreev reflection has been demonstrated, in (Ga,Mn)As quasiparticle density of states (DOS) broadening has been observed, possibly due to inelastic scattering effects. Here, we investigate the spin polarization, magnetic, and transport properties of epitaxially grown (Ga,Mn)Sb films with the Curie temperature of ~ 10K. The spin polarization of 57+/-5% was measured. Spectrum broadening in (Ga,Mn)Sb has also been observed. △ Less

Submitted 23 October, 2007; originally announced October 2007.

Comments: 16 pages,4 figures

Anomalous Hall effect in (In,Mn)Sb dilute magnetic semiconductor

Authors: G. Mihaly, M. Csontos, S. Bordacs, I. Kezsmarki, T. Wojtowicz, X. Liu, B. Janko, J. K. Furdyna

Abstract: High magnetic field study of Hall resistivity in the ferromagnetic phase of (In,Mn)Sb allows one to separate its normal and anomalous components. We show that the anomalous Hall term is not proportional to the magnetization, and that it even changes sign as a function of magnetic field. We also show that the application of pressure modifies the scattering process, but does not influence the Hall… ▽ More High magnetic field study of Hall resistivity in the ferromagnetic phase of (In,Mn)Sb allows one to separate its normal and anomalous components. We show that the anomalous Hall term is not proportional to the magnetization, and that it even changes sign as a function of magnetic field. We also show that the application of pressure modifies the scattering process, but does not influence the Hall effect. These observations suggest that the anomalous Hall effect in (In,Mn)Sb is an intrinsic property and support the application of the Berry phase theory for (III,Mn)V semiconductors. We propose a phenomenological description of the anomalous Hall conductivity, based on a field-dependent relative shift of the heavy- and light-hole valence bands and the split-off band. △ Less

Submitted 10 October, 2007; v1 submitted 1 September, 2007; originally announced September 2007.

Definitive Evidence of Interlayer Coupling Between (Ga,Mn)As Layers Separated by a Nonmagnetic Spacer

Authors: B. J. Kirby, J. A. Borchers, X. Liu, Y. J. Cho, M. Dobrowolska, J. K. Furdyna

Abstract: We have used polarized neutron reflectometry to study the structural and magnetic properties of the individual layers in a series of (Al,Be,Ga)As/(Ga,Mn)As/GaAs/(Ga,Mn)As multilayer samples. Structurally, we observe that the samples are virtually identical except for the GaAs spacer thickness (which varies from 3-12 nm), and confirm that the spacers contain little or no Mn. Magnetically, we obse… ▽ More We have used polarized neutron reflectometry to study the structural and magnetic properties of the individual layers in a series of (Al,Be,Ga)As/(Ga,Mn)As/GaAs/(Ga,Mn)As multilayer samples. Structurally, we observe that the samples are virtually identical except for the GaAs spacer thickness (which varies from 3-12 nm), and confirm that the spacers contain little or no Mn. Magnetically, we observe that for the sample with the thickest spacer layer, modulation doping by the(Al,Be,Ga)As results in (Ga,Mn)As layers with very different temperature dependent magnetizations. However, as the spacer layer thickness is reduced, the temperature dependent magnetizations of the top an bottom (Ga,Mn)As layers become progressively more similar - a trend we find to be independent of the crystallographic direction along which spins are magnetized. These results definitively show that (Ga,Mn)As layers can couple across a non-magnetic spacer, and that such coupling depends on spacer thickness. △ Less

Submitted 10 September, 2007; v1 submitted 16 August, 2007; originally announced August 2007.

Comments: Submitted to Physical Review B

Weak localization in GaMnAs: evidence of impurity band transport

Authors: L. P. Rokhinson, Y. Lyanda-Geller, Z. Ge, S. Shen, X. Liu, M. Dobrowolska, J. K. Furdyna

Abstract: We report the observation of negative magnetoresistance in the ferromagnetic semiconductor GaMnAs at low temperatures ($T<3$ K) and low magnetic fields ($0< B <20$ mT). We attribute this effect to weak localization. Observation of weak localization provides a strong evidence of impurity band transport in these materials, since for valence band transport one expects either weak anti-localization… ▽ More We report the observation of negative magnetoresistance in the ferromagnetic semiconductor GaMnAs at low temperatures ($T<3$ K) and low magnetic fields ($0< B <20$ mT). We attribute this effect to weak localization. Observation of weak localization provides a strong evidence of impurity band transport in these materials, since for valence band transport one expects either weak anti-localization due to strong spin-orbit interactions or total suppression of interference by intrinsic magnetization. In addition to the weak localization, we observe Altshuler-Aronov electron-electron interactions effect in this material. △ Less

Submitted 16 July, 2007; originally announced July 2007.

Comments: 5 pages, 4 figure

Coherent Magnetization Precession in GaMnAs induced by Ultrafast Optical Excitation

Authors: J. Qi, Y. Xu, N. Tolk, X. Liu, J. K. Furdyna, I. E. Perakis

Abstract: We use femtosecond optical pulses to induce, control and monitor magnetization precession in ferromagnetic Ga0.965Mn0.035As. At temperatures below ~40 K we observe coherent oscillations of the local Mn spins, triggered by an ultrafast photoinduced reorientation of the in-plane easy axis. The amplitude saturation of the oscillations above a certain pump intensity indicates that the easy axis rema… ▽ More We use femtosecond optical pulses to induce, control and monitor magnetization precession in ferromagnetic Ga0.965Mn0.035As. At temperatures below ~40 K we observe coherent oscillations of the local Mn spins, triggered by an ultrafast photoinduced reorientation of the in-plane easy axis. The amplitude saturation of the oscillations above a certain pump intensity indicates that the easy axis remains unchanged above ~TC/2. We find that the observed magnetization precession damping (Gilbert damping) is strongly dependent on pump laser intensity, but largely independent on ambient temperature. We provide a physical interpretation of the observed light-induced collective Mn-spin relaxation and precession. △ Less

Submitted 19 July, 2007; v1 submitted 28 June, 2007; originally announced June 2007.

Comments: 7 pages,3 figures

Spin dependent resonant tunneling through 6 micron diameter double barrier resonant tunneling diode

Authors: Z. L. Fang, P. Wu, N. Kundtz, A. M. Chang, X. Y. Liu, J. K. Furdyna

Abstract: A vertical resonant tunneling diode (RTD) based on the paramagnetic Zn1-x-yMnyCdxSe system has been fabricated with a pillar diameter down to ~ 6 micron. The diode exhibits high quality resonant tunneling characteristics through the electron sub-band of the quantum well at a temperature of 4.2K, where a clear phonon replica was observable in addition to the primary peak. Both peaks show a giant… ▽ More A vertical resonant tunneling diode (RTD) based on the paramagnetic Zn1-x-yMnyCdxSe system has been fabricated with a pillar diameter down to ~ 6 micron. The diode exhibits high quality resonant tunneling characteristics through the electron sub-band of the quantum well at a temperature of 4.2K, where a clear phonon replica was observable in addition to the primary peak. Both peaks show a giant Zeeman splitting in an applied magnetic field. Employing a self-consistent real-time Green's function method, the current-voltage characteristic was simulated, showing good agreement with the measured result. △ Less

Submitted 10 May, 2007; v1 submitted 8 May, 2007; originally announced May 2007.

Comments: 3 pages with 3 pictures, submitted to Appl. Phys. Lett

Ultrafast Enhancement of Ferromagnetism via Photoexcited Holes in GaMnAs

Authors: J. Wang, I. Cotoros, K. M. Dani, D. S. Chemla, X. Liu, J. K. Furdyna

Abstract: We report on the observation of ultrafast photo-enhanced ferromagnetism in GaMnAs. It is manifested as a transient magnetization increase on a 100-ps time scale, after an initial sub-ps demagnetization. The dynamic magnetization enhancement exhibits a maximum below the Curie temperature Tc and dominates the demagnetization component when approaching Tc. We attribute the observed ultrafast collec… ▽ More We report on the observation of ultrafast photo-enhanced ferromagnetism in GaMnAs. It is manifested as a transient magnetization increase on a 100-ps time scale, after an initial sub-ps demagnetization. The dynamic magnetization enhancement exhibits a maximum below the Curie temperature Tc and dominates the demagnetization component when approaching Tc. We attribute the observed ultrafast collective ordering to the p-d exchange interaction between photoexcited holes and Mn spins, leading to a correlation-induced peak around 20K and a transient increase in Tc. △ Less

Submitted 19 February, 2007; v1 submitted 19 February, 2007; originally announced February 2007.

Comments: 4 pages

Magnetic Anisotropy, Spin Pinning and Exchange Constants of (Ga,Mn)As films

Authors: Ying-Yuan Zhou, Yong-Jin Cho, Zhiguo Ge, Xinyu Liu, Malgorzata Dobrowolska, Jacek K. Furdyna

Abstract: We present a detailed investigation of exchange-dominated nonpropagating spin-wave modes in a series of 100 nm Ga$_{1 - x}$Mn$_{x}$As films with Mn concentrations $x$ ranging from 0.02 to 0.08. The angular and Mn concentration dependences of spin wave resonance modes have been studied for both as-grown and annealed samples. Our results indicate that the magnetic anisotropy terms of Ga$_{1 - x}$M… ▽ More We present a detailed investigation of exchange-dominated nonpropagating spin-wave modes in a series of 100 nm Ga$_{1 - x}$Mn$_{x}$As films with Mn concentrations $x$ ranging from 0.02 to 0.08. The angular and Mn concentration dependences of spin wave resonance modes have been studied for both as-grown and annealed samples. Our results indicate that the magnetic anisotropy terms of Ga$_{1 - x}$Mn$_{x}$As depend on the Mn concentration $x$, but are also strongly affected by sample growth conditions; moreover, the magnetic anisotropy of Ga$_{1 - x}$Mn$_{x}$As films is found to be clearly linked to the Curie temperature. The spin wave resonance spectra consist of a series of well resolved standing spin-wave modes. The observed mode patterns are consistent with the Portis volume-inhomogeneity model, in which a spatially nonuniform anisotropy field acts on the Mn spins. The analysis of these exchange-dominated spin wave modes, including their angular dependences, allows us to establish the exchange stiffness constants for Ga$_{1 - x}$Mn$_{x}$As films. △ Less

Submitted 29 January, 2007; originally announced January 2007.

Comments: 4 pages, 3 figures

Near-bandgap wavelength-dependent studies of long-lived traveling coherent longitudinal acoustic phonon oscillations in GaSb/GaAs systems

Authors: J. K. Miller, J. Qi, Y. Xu, Y. -J. Cho, X. Liu, J. K. Furdyna, I. Perakis, T. V. Shahbazyan, N. Tolk

Abstract: We report first studies of long-lived oscillations in optical pump-probe measurements on GaSb-GaAs heterostructures. The oscillations arise from a photogenerated coherent longitudinal acoustic phonon wave, which travels from the top surface of GaSb across the interface into the GaAs substrate, providing information on the optical properties of the material as a function of time/depth. Wavelength… ▽ More We report first studies of long-lived oscillations in optical pump-probe measurements on GaSb-GaAs heterostructures. The oscillations arise from a photogenerated coherent longitudinal acoustic phonon wave, which travels from the top surface of GaSb across the interface into the GaAs substrate, providing information on the optical properties of the material as a function of time/depth. Wavelength-dependent studies of the oscillations near the bandgap of GaAs indicate strong correlations to the optical properties of GaAs. △ Less

Submitted 10 January, 2007; originally announced January 2007.

Comments: 11 pages, 4 figures

Journal ref: Phys. Rev. B 74, 113313 (2006)

Light-Induced Magnetic Precession in (Ga,Mn)As Slabs: Hybrid Standing-Wave Damon-Eshbach Modes

Authors: D. M. Wang, Y. H. Ren, X. Liu, J. K. Furdyna, M. Grimsditch, R. Merlin

Abstract: Coherent oscillations associated with spin precessions were observed in ultrafast optical experiments on ferromagnetic (Ga,Mn)As films. Using a complete theoretical description of the processes by which light couples to the magnetization, values for the exchange and anisotropy constants were obtained from the field-dependence of the magnon frequencies and the oscillation-amplitude ratios. Result… ▽ More Coherent oscillations associated with spin precessions were observed in ultrafast optical experiments on ferromagnetic (Ga,Mn)As films. Using a complete theoretical description of the processes by which light couples to the magnetization, values for the exchange and anisotropy constants were obtained from the field-dependence of the magnon frequencies and the oscillation-amplitude ratios. Results reveal a relatively large negative contribution to the energy due to surface anisotropy leading to excitations that are a mixture of bulk waves and surface modes. △ Less

Submitted 25 September, 2006; originally announced September 2006.

Comments: 17 pages, 4 figures

Magnetic and chemical nonuniformity in Ga[1-x]Mn[x]As films as probed by polarized neutron and x-ray reflectometry

Authors: B. J. Kirby, J. A. Borchers, J. J. Rhyne, K. V. O'Donovan, S. G. E. te Velthuis, S. Roy, Cecilia Sanchez-Hanke, T. Wojtowicz, X. Liu, W. L. Lim, M. Dobrowolska, J. K. Furdyna

Abstract: We have used complementary neutron and x-ray reflectivity techniques to examine the depth profiles of a series of as-grown and annealed Ga[1-x]Mn[x]As thin films. A magnetization gradient is observed for two as-grown films and originates from a nonuniformity of Mn at interstitial sites, and not from local variations in Mn at Ga sites. Furthermore, we see that the depth-dependent magnetization ca… ▽ More We have used complementary neutron and x-ray reflectivity techniques to examine the depth profiles of a series of as-grown and annealed Ga[1-x]Mn[x]As thin films. A magnetization gradient is observed for two as-grown films and originates from a nonuniformity of Mn at interstitial sites, and not from local variations in Mn at Ga sites. Furthermore, we see that the depth-dependent magnetization can vary drastically among as-grown Ga[1-x]Mn[x]As films despite being deposited under seemingly similar conditions. These results imply that the depth profile of interstitial Mn is dependent not only on annealing, but is also extremely sensitive to initial growth conditions. We observe that annealing improves the magnetization by producing a surface layer that is rich in Mn and O, indicating that the interstitial Mn migrates to the surface. Finally, we expand upon our previous neutron reflectivity study of Ga[1-x]Mn[x]As, by showing how the depth profile of the chemical composition at the surface and through the film thickness is directly responsible for the complex magnetization profiles observed in both as-grown and annealed films. △ Less

Submitted 15 December, 2006; v1 submitted 7 February, 2006; originally announced February 2006.

Comments: Now Published in Physical Review B

Journal ref: Physical Review B, 74, 245304 (2006)

Magnetic scattering of spin polarized carriers in (In,Mn)Sb dilute magnetic semiconductor

Authors: M. Csontos, T. Wojtowicz, X. Liu, M. Dobrowolska B. Jankó, J. K. Furdyna, G. Mihály

Abstract: Magnetoresistance measurements on the magnetic semiconductor (In,Mn)Sb suggest that magnetic scattering in this material is dominated by isolated Mn$^{2+}$ ions located outside the ferromagnetically-ordered regions when the system is below $T_{c}$. A model is proposed, based on the $p$-$d$ exchange between spin-polarized charge carriers and localized Mn$^{2+}$ ions, which accounts for the observ… ▽ More Magnetoresistance measurements on the magnetic semiconductor (In,Mn)Sb suggest that magnetic scattering in this material is dominated by isolated Mn$^{2+}$ ions located outside the ferromagnetically-ordered regions when the system is below $T_{c}$. A model is proposed, based on the $p$-$d$ exchange between spin-polarized charge carriers and localized Mn$^{2+}$ ions, which accounts for the observed behavior both below and above the ferromagnetic phase transition. The suggested picture is further verified by high-pressure experiments, in which the degree of magnetic interaction can be varied in a controlled way. △ Less

Submitted 24 May, 2005; originally announced May 2005.

Perpendicular magnetization reversal, magnetic anisotropy, multi-step spin switching, and domain nucleation and expansion in Ga1-xMnxAs films

Authors: X. Liu, W. L. Lim, L. V. Titova, M. Dobrowolska, J. K. Furdyna, M. Kutrowski, T. Wojtowicz

Abstract: We present a comprehensive study of the reversal process of perpendicular magnetization in thin layers of the ferromagnetic semiconductor Ga1-xMnxAs. For this investigation we have purposely chosen Ga1-xMnxAs with a low Mn concentration (x ~ 0.02), since in such specimens contributions of cubic and uniaxial anisotropy parameters are comparable, allowing us to identify the role of both types of a… ▽ More We present a comprehensive study of the reversal process of perpendicular magnetization in thin layers of the ferromagnetic semiconductor Ga1-xMnxAs. For this investigation we have purposely chosen Ga1-xMnxAs with a low Mn concentration (x ~ 0.02), since in such specimens contributions of cubic and uniaxial anisotropy parameters are comparable, allowing us to identify the role of both types of anisotropy in the magnetic reversal process. As a first step we have systematically mapped out the angular dependence of ferromagnetic resonance in thin Ga1-xMnxAs layers, which is a highly effective tool for obtaining the magnetic anisotropy parameters of the material. The process of perpendicular magnetization reversal was then studied by magneto-transport (i.e., Hall effect and planar Hall effect measurements). These measurements enable us to observe coherent spin rotation and non-coherent spin switching between the (100) and (010) planes. A model is proposed to explain the observed multi-step spin switching. The agreement of the model with experiment indicates that it can be reliably used for determining magnetic anisotropy parameters from magneto-transport data. An interesting characteristic of perpendicular magnetization reversal in Ga1-xMnxAs with low x is the appearance of a double hysteresis loops in the magnetization data. This double-loop behavior can be understood by generalizing the proposed model to include the processes of domain nucleation and expansion. △ Less

Submitted 12 May, 2005; originally announced May 2005.

Zero- and one-dimensional magnetic traps for quasi-particles

Authors: P. Redlinski, T. Wojtowicz, T. G. Rappoport, A. Libal, J. K. Furdyna, B. Janko

Abstract: We investigate the possibility of trapping quasi-particles possessing spin degree of freedom in hybrid structures. The hybrid system we are considering here is composed of a semi-magnetic quantum well placed a few nanometers below a ferromagnetic micromagnet. We are interested in two different micromagnet shapes: cylindrical (micro-disk) and rectangular geometry. We show that in the case of a mi… ▽ More We investigate the possibility of trapping quasi-particles possessing spin degree of freedom in hybrid structures. The hybrid system we are considering here is composed of a semi-magnetic quantum well placed a few nanometers below a ferromagnetic micromagnet. We are interested in two different micromagnet shapes: cylindrical (micro-disk) and rectangular geometry. We show that in the case of a micro-disk, the spin object is localized in all three directions and therefore zero-dimensional states are created, and in the case of an elongated rectangular micromagnet, the quasi-particles can move freely in one direction, hence one-dimensional states are formed. After calculating profiles of the magnetic field produced by the micromagnets, we analyze in detail the possible light absorption spectrum for different micromagnet thicknesses, and different distances between the micromagnet and the semimagnetic quantum well. We find that the discrete spectrum of the localized states can be detected via spatially-resolved low temperature optical measurement. △ Less

Submitted 1 May, 2005; originally announced May 2005.

Comments: 15 pages, 9 figures

Journal ref: PRB 72, 085209, (2005)