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Momentum-resolved resonant photoelectron spectroscopic study for 1T-TiSe$_2$: Observation of negative q in the Fano resonance due to inter-atomic interaction in the valence band
Authors:
Shin-ichiro Tanaka,
Shigemasa Suga,
Keiji Ueno,
Keisuke Fukutani,
Fumihiko Matsui
Abstract:
The remarkable properties of (1T-)TiSe$_2$ among the transition metal dichalcogenides have attracted the attention of many researchers due to its peculiar behavior during the charge density wave (CDW) transition. Therefore, it is highly desirable to study its electronic structure down to the atomic orbitals. In the present research, we applied momentum-resolved resonant photoelectron spectroscopy…
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The remarkable properties of (1T-)TiSe$_2$ among the transition metal dichalcogenides have attracted the attention of many researchers due to its peculiar behavior during the charge density wave (CDW) transition. Therefore, it is highly desirable to study its electronic structure down to the atomic orbitals. In the present research, we applied momentum-resolved resonant photoelectron spectroscopy to study TiSe$_2$ at the Ti2p-Ti3d absorption edge by using a momentum microscope, which can simultaneously detect the electronic states in a wide $(k_x,k_y)$ range. We have also used constant initial state (CIS) spectroscopy and density functional theory (DFT) calculations to reveal the hybridization between the Ti3d and Se4p orbitals within the valence band at the Gamma point at room temperature. In addition, an interesting result comes from our analysis of the CIS spectrum for the energy band located at a binding energy of 2 eV at the M-point. This band, mainly composed of the Se4p orbital, exhibited a Fano line profile at the Ti2p edge, with a negative value of the parameter "$q$". This is the first clear evidence of the inter-atomic interaction during the valence band photoelectron emission process. This behavior differs significantly from the standard resonant photoelectron emission, which usually involves intra-atomic interactions. It also differs from the multi-atom resonant photoelectron emission (MARPE) observed in the core-level photoelectron emission, as we focus on the photoelectron emission from the valence band in this research.
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Submitted 7 February, 2024;
originally announced February 2024.
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Detecting photoelectrons from spontaneously formed excitons
Authors:
Keisuke Fukutani,
Roland Stania,
Chang Il Kwon,
Jun Sung Kim,
Ki Jeong Kong,
Jaeyoung Kim,
Han Woong Yeom
Abstract:
Excitons, quasiparticles of electrons and holes bound by Coulombic attraction, are created transiently by light and play an important role in optoelectronics, photovoltaics and photosynthesis. While they are also predicted to form spontaneously in a small gap semiconductor or a semimetal, leading to a Bose-Einstein condensate at low temperature, their material realization has been elusive without…
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Excitons, quasiparticles of electrons and holes bound by Coulombic attraction, are created transiently by light and play an important role in optoelectronics, photovoltaics and photosynthesis. While they are also predicted to form spontaneously in a small gap semiconductor or a semimetal, leading to a Bose-Einstein condensate at low temperature, their material realization has been elusive without any direct evidence. Here we detect the direct photoemission signal from spontaneously formed excitons in a debated excitonic insulator candidate Ta2NiSe5. Our symmetry-selective angle-resolved photoemission spectroscopy reveals a characteristic excitonic feature above the transition temperature, which provides detailed properties of excitons such as anisotropic Bohr radius. The present result evidences so called preformed excitons and guarantees the excitonic insulator nature of Ta2NiSe5 at low temperature. Direct photoemission can be an important tool to characterize steady-state excitons.
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Submitted 24 May, 2021;
originally announced May 2021.
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Tunable two-dimensional electron gas at the surface of thermoelectric material In$_4$Se$_3$
Authors:
K. Fukutani,
T. Sato,
P. V. Galiy,
K. Sugawara,
T. Takahashi
Abstract:
We report the discovery of two-dimensional electron gas (2DEG) at the surface of thermoelectric material In$_4$Se$_3$ by angle-resolved photoemission spectroscopy. The observed 2DEG exhibits a nearly isotropic band dispersion with a considerably small effective mass of m* = 0.16 m_0, and its carrier density shows a significant temperature dependence, leading to unconventional metal-semiconductor t…
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We report the discovery of two-dimensional electron gas (2DEG) at the surface of thermoelectric material In$_4$Se$_3$ by angle-resolved photoemission spectroscopy. The observed 2DEG exhibits a nearly isotropic band dispersion with a considerably small effective mass of m* = 0.16 m_0, and its carrier density shows a significant temperature dependence, leading to unconventional metal-semiconductor transition at the surface. The observed wide-range thermal tunability of 2DEG in In$_4$Se$_3$ gives rise to additional degrees of freedom to better control the surface carriers of semiconductors.
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Submitted 1 June, 2016;
originally announced June 2016.
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Nuclear resonant scattering of synchrotron radiation by physisorbed Kr on TiO$_{2}$(110) surfaces in multilayer and monolayer regimes
Authors:
Akihiko Ikeda,
Taizo Kawauchi,
Masuaki Matsumoto,
Tatsuo Okano,
Katsuyuki Fukutani,
Xiao Wei Zhang,
Yoshitaka Yoda
Abstract:
Physisorbed Kr layers on TiO$_{2}$(110) surfaces were investigated by means of nuclear resonant scattering (NRS) of synchrotron radiation at Kr thicknesses ranging from multilayer to monolayer. The NRS intensity was measured as a function of the Kr exposure, from which the NRS signal corresponding to monolayer was estimated as 0.23 cps. The time spectra measured at various thicknesses showed a mon…
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Physisorbed Kr layers on TiO$_{2}$(110) surfaces were investigated by means of nuclear resonant scattering (NRS) of synchrotron radiation at Kr thicknesses ranging from multilayer to monolayer. The NRS intensity was measured as a function of the Kr exposure, from which the NRS signal corresponding to monolayer was estimated as 0.23 cps. The time spectra measured at various thicknesses showed a monotonous decay without any quantum beat features. The recoiless fraction $f$ evaluated from the analysis of the time spectrum revealed a substantial reduction upon temperature rise from 19 to 25 K. As its origin, an order-disorder phase transition of the monolayer Kr is proposed.
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Submitted 7 April, 2015; v1 submitted 20 March, 2015;
originally announced March 2015.
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Knudsen layer formation in laser induced thermal desorption
Authors:
Akihiko Ikeda,
Masuaki Matsumoto,
Shohei Ogura,
Tatsuo Okano,
Katsuyuki Fukutani
Abstract:
Laser induced thermal desorption of Xe atoms into vacuum from a metal surface following the nano-second pulsed laser heating was investigated by the time-of-flight (TOF) measurement. The desorption flow was studied at a wide range of desorption flux by varying the initially prepared Xe coverage Θ (1 ML = 4.5*10^18 atoms/m^2). At Θ = 0.3 ML, the TOF of Xe was well represented by a Maxwell-Boltzmann…
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Laser induced thermal desorption of Xe atoms into vacuum from a metal surface following the nano-second pulsed laser heating was investigated by the time-of-flight (TOF) measurement. The desorption flow was studied at a wide range of desorption flux by varying the initially prepared Xe coverage Θ (1 ML = 4.5*10^18 atoms/m^2). At Θ = 0.3 ML, the TOF of Xe was well represented by a Maxwell-Boltzmann velocity distribution, which is in good agreement with thermal desorption followed by collision-free flow. At Θ > 0.3 ML, the peak positions of the TOF spectra were shifted towards the smaller values and became constant at large Θ, which were well fitted with a shifted Maxwell-Boltzmann velocity distribution with a temperature T_D and a stream velocity u. With T_D fixed at 165 K, u was found to increase from 80 to 125 m/ s with increasing Θ from 1.2 to 4 ML. At Θ > 4 ML, the value of u become constant at 125 m/ s. The converging feature of u was found to be consistent with analytical predictions and simulated results based on the Knudsen layer formation theory. We found that the Knudsen layer formation in laser desorption is completed at Knudsen number Kn <0.39.
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Submitted 8 March, 2013;
originally announced March 2013.
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Photostimulated desorption of Xe from Au(001) surfaces via transient Xe- formation
Authors:
Akihiko Ikeda,
Masuaki Matsumoto,
Shohei Ogura,
Katsuyuki Fukutani,
Tatsuo Okano
Abstract:
Photo-stimulated desorption (PSD) of Xe atoms from the Au(001) surface in thermal and nonthermal regimes was investigated by the time-of-flight measurement at photon energies of 6.4 and 2.3 eV. Xe was desorbed in a thermal way at high laser fluence, which was in good agreement with theoretical simulations. At a low laser fluence, on the other hand, desorption was induced only at a photon energy of…
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Photo-stimulated desorption (PSD) of Xe atoms from the Au(001) surface in thermal and nonthermal regimes was investigated by the time-of-flight measurement at photon energies of 6.4 and 2.3 eV. Xe was desorbed in a thermal way at high laser fluence, which was in good agreement with theoretical simulations. At a low laser fluence, on the other hand, desorption was induced only at a photon energy of 6.4 eV by a non-thermal one-photon process. We argue that the nonthermal PSD occurs via transient formation of Xe- on Au(001). The lifetime of Xe- is estimated to be ~15 fs with a classical model calculation. Whereas the electron affinity of Xe is negative in the isolated state, it is stabilized by the metal proximity effect.
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Submitted 23 June, 2012;
originally announced June 2012.
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Thermal Transient Characterization of Packaged Thin Film Microcoolers
Authors:
K. Fukutani,
R. Singh,
A. Shakouri
Abstract:
A network identification by deconvolution (NID) method is applied to the thermal transient response of packaged and unpackaged microcoolers. A thin film resistor on top of the device is used as the heat source and the temperature sensor. The package and the bonding thermal resistances can be easily identified by comparing structure functions. High-speed coplanar probes are used to achieve a shor…
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A network identification by deconvolution (NID) method is applied to the thermal transient response of packaged and unpackaged microcoolers. A thin film resistor on top of the device is used as the heat source and the temperature sensor. The package and the bonding thermal resistances can be easily identified by comparing structure functions. High-speed coplanar probes are used to achieve a short time resolution of roughly 100ns in the transient temperature response. This is used to separate the thermal properties of the thin film from the substrate. The obtained thermal resistances of the buffer layer and Silicon substrate are consistent with the theoretical calculations. In order to estimate the superlattice thermal resistance and separate it from the thin SiNx layer deposited underneath the thin film resistive sensor, an order of magnitude faster thermal transient response is needed.
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Submitted 12 September, 2007;
originally announced September 2007.
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Classification of Light-Induced Desorption of Alkali Atoms in Glass Cells Used in Atomic Physics Experiments
Authors:
Atsushi Hatakeyama,
Markus Wilde,
Katsuyuki Fukutani
Abstract:
We attempt to provide physical interpretations of light-induced desorption phenomena that have recently been observed for alkali atoms on glass surfaces of alkali vapor cells used in atomic physics experiments. We find that the observed desorption phenomena are closely related to recent studies in surface science, and can probably be understood in the context of these results. If classified in t…
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We attempt to provide physical interpretations of light-induced desorption phenomena that have recently been observed for alkali atoms on glass surfaces of alkali vapor cells used in atomic physics experiments. We find that the observed desorption phenomena are closely related to recent studies in surface science, and can probably be understood in the context of these results. If classified in terms of the photon-energy dependence, the coverage and the bonding state of the alkali adsorbates, the phenomena fall into two categories: It appears very likely that the neutralization of isolated ionic adsorbates by photo-excited electron transfer from the substrate is the origin of the desorption induced by ultraviolet light in ultrahigh vacuum cells. The desorption observed in low temperature cells, on the other hand, which is resonantly dependent on photon energy in the visible light range, is quite similar to light-induced desorption stimulated by localized electronic excitation on metallic aggregates. More detailed studies of light-induced desorption events from surfaces well characterized with respect to alkali coverage-dependent ionicity and aggregate morphology appear highly desirable for the development of more efficient alkali atom sources suitable to improve a variety of atomic physics experiments.
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Submitted 16 January, 2006; v1 submitted 19 December, 2005;
originally announced December 2005.
