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Efficient spin-orbit torque driven magnetization switching of GdFe using phosphorus-implanted platinum layers
Authors:
Kazuki Shintaku,
Arun Jacob Mathew,
Akihisa Iwamoto,
Mojtaba Mohammadi,
Hiroyuki Awano,
Hironori Asada,
Yasuhiro Fukuma
Abstract:
The capability of the spin-orbit torque (SOT) generated via phenomena such as the spin Hall effect in heavy metals, in switching the magnetization of an adjacent magnetic material, has been studied extensively over the last decade. The efficiency of SOT generation is commonly quantified in terms of the spin Hall angle θ_SH. In this work, we demonstrate experimentally that implanting platinum (Pt)…
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The capability of the spin-orbit torque (SOT) generated via phenomena such as the spin Hall effect in heavy metals, in switching the magnetization of an adjacent magnetic material, has been studied extensively over the last decade. The efficiency of SOT generation is commonly quantified in terms of the spin Hall angle θ_SH. In this work, we demonstrate experimentally that implanting platinum (Pt) with phosphorus (P), resulting in Pt (P) d, where d denotes the implantation dose, increases θ_SH by a factor of 7, from 0.06 (d = 0) to 0.43 (d = 10*10^16 ions/cm^2). The enhanced θ_SH, along with factors such as perpendicular magnetic anisotropy and resistivity, lead to reduction of the critical current density for switching the perpendicular magnetization of ferrimagnetic rare earth-transition metal alloy Gd26Fe74, by a factor of nearly 27, from 4.0*1011 A/m^2 (d = 0) to 1.5*10^10 A/m^2 (d = 10*10^16 ions/cm^2). Further, the switching current density at zero thermal fluctuations and thermal stability factor were evaluated and found to be 2.0*10^10 A/m^2 and 61.4 (d = 10*10^16 ions/cm^2), with the latter being sufficiently above the required threshold for commercial memory applications. Our results suggest that Pt (P) could be a strong candidate in realizing efficient SOT driven magnetization switching leading to the development of improved memory and logic devices in the future.
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Submitted 16 April, 2025;
originally announced April 2025.
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Phase Binarization in Mutually Synchronized Bias Field-free Spin Hall Nano-oscillators for Reservoir Computing
Authors:
Sourabh Manna,
Rohit Medwal,
John Rex Mohan,
Yasuhiro Fukuma,
Rajdeep Singh Rawat
Abstract:
Mutually coupled spin Hall nano-oscillators (SHNO) can exhibit binarized phase state, offering pathways to realize Ising machines and efficient neuromorphic hardware. Conventionally, phase binarization is achieved in coupled SHNOs via injecting an external microwave at twice of the oscillator frequency in presence of a biasing magnetic field. However, this technology poses potential challenges of…
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Mutually coupled spin Hall nano-oscillators (SHNO) can exhibit binarized phase state, offering pathways to realize Ising machines and efficient neuromorphic hardware. Conventionally, phase binarization is achieved in coupled SHNOs via injecting an external microwave at twice of the oscillator frequency in presence of a biasing magnetic field. However, this technology poses potential challenges of higher energy consumption and complex circuit design. Moreover, fabrication-induced mismatch in SHNO dimensions may hinder mutual synchronization. Addressing these challenges, we demonstrate purely DC current-driven mutual synchronization and phase binarization of two non-identical nanoconstriction SHNOs without biasing magnetic field and microwave injection. We thoroughly investigate these phenomena and underlying mechanisms using micromagnetic simulation. We further demonstrate the bias field-free synchronized SHNO pair efficiently performing a reservoir computing benchmark learning task: sin and square wave classification, utilizing current tunable phase binarization. Our results showcase promising magnetization dynamics of coupled bias field-free SHNOs for future computing applications.
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Submitted 5 April, 2024;
originally announced April 2024.
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Direct visualization of local magnetic domain dynamics in a 2D Van der Walls material/ferromagnet interface
Authors:
Joseph Vimal Vas,
Rohit Medwal,
Sourabh Manna,
Mayank Mishra,
Aaron Muller,
John Rex Mohan,
Yasuhiro Fukuma,
Martial Duchamp,
Rajdeep Singh Rawat
Abstract:
Exploring new strategies for controlling the magnetic domain propagation is the key to realize ultrafast, high-density domain wall-based memory and logic devices for next generation computing. These strategies include strain modulation in multiferroic devices, geometric confinement and area-selective pinning of domain wall. 2D Van der Waals materials introduce localized modifications to the interf…
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Exploring new strategies for controlling the magnetic domain propagation is the key to realize ultrafast, high-density domain wall-based memory and logic devices for next generation computing. These strategies include strain modulation in multiferroic devices, geometric confinement and area-selective pinning of domain wall. 2D Van der Waals materials introduce localized modifications to the interfacial magnetic order, enabling control over the propagation of magnetic domains. Here, using Lorentz-Transmission Electron Microscopy (L-TEM) along with the Modified Transport of Intensity equations (MTIE), we demonstrate controlled domain expansion with in-situ magnetic field in a ferromagnet (Permalloy, NiFe) interfacing with a 2D Van der Waals material Graphene (Gr). The Gr/NiFe interface exhibits distinctive domain expansion rate with magnetic field selectively near the interface which is further analyzed using micromagnetic simulations. Our findings are crucial for comprehending direct visualization of interface controlled magnetic domain expansion, offering insights for developing future domain wall-based technology.
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Submitted 3 April, 2024;
originally announced April 2024.
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Interfacial spintronic THz emission
Authors:
Piyush Agarwal,
Rohit Medwal,
Keynesh Dongol,
John Rex Mohan,
Yingshu Yang,
Hironori Asada,
Yasuhiro Fukuma,
Ranjan Singh
Abstract:
The broken inversion symmetry at the ferromagnet (FM)/heavy-metal (HM) interface leads to spin-dependent degeneracy of the energy band, forming spin-polarized surface states. As a result, the interface serves as an effective medium for converting spin accumulation into two-dimensional charge current through the inverse Rashba-Edelstein effect. Exploring and assessing this spin-to-charge conversion…
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The broken inversion symmetry at the ferromagnet (FM)/heavy-metal (HM) interface leads to spin-dependent degeneracy of the energy band, forming spin-polarized surface states. As a result, the interface serves as an effective medium for converting spin accumulation into two-dimensional charge current through the inverse Rashba-Edelstein effect. Exploring and assessing this spin-to-charge conversion (SCC) phenomenon at the FM/HM interface could offer a promising avenue to surpass the presumed limits of SCC in bulk HM layers. We utilize spintronic heterostructures as a platform to measure the spin-to-charge conversion (SCC) experienced by photoexcited spin currents. These heterostructures emit terahertz electric field when illuminated by femtosecond laser pulses, enabling us to quantitatively assess the ultrafast SCC process. Our results demonstrate a robust interfacial spin-to-charge conversion (iSCC) within a synthetic antiferromagnetic heterostructure, specifically for the NiFe/Ru/NiFe configuration, by isolating the SCC contribution originating from the interface itself, separate from the bulk heavy-metal (HM) region. Moreover, the iSCC at the NiFe/Ru interface is discovered to be approximately 27% of the strength observed in the highest spin-Hall conducting heavy-metal, Pt. Our results thus highlight the significance of interfacial engineering as a promising pathway for achieving efficient ultrafast spintronic devices.
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Submitted 11 August, 2023;
originally announced August 2023.
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Unconventional spin polarization at Argon ion milled SrTiO3 Interfaces
Authors:
Amrendra Kumar,
Utkarsh Shashank,
Suman Kumar Maharana,
John Rex Mohan,
Surbhi Gupta,
Hironori Asada,
Yasuhiro Fukuma,
Rohit Medwal
Abstract:
Interfacial two-dimensional electron gas (2DEG) formed at the perovskite-type oxide, such as SrTiO3, has attracted significant attention due to its properties of ferromagnetism, superconductivity, and its potential application in oxide-based low-power consumption electronics. Recent studies have investigated spin-to-charge conversion at the STO interface with different materials, which could affec…
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Interfacial two-dimensional electron gas (2DEG) formed at the perovskite-type oxide, such as SrTiO3, has attracted significant attention due to its properties of ferromagnetism, superconductivity, and its potential application in oxide-based low-power consumption electronics. Recent studies have investigated spin-to-charge conversion at the STO interface with different materials, which could affect the efficiency of this 2DEG interface. In this report, we presented an Ar^+ ion milling method to create a 2DEG at STO directly by inducing oxygen vacancies. To quantify the spin-to-charge conversion of this interface, we measured the angular-dependent spin-torque ferromagnetic resonance (ST-FMR) spectra, revealing an unconventional spin polarization at the interface of Argon ion-milled STO and NiFe. Furthermore, a micromagnetic simulation for angular-dependent spin-torque ferromagnetic resonance (ST-FMR) has been performed, confirming the large unconventional spin polarization at the interface.
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Submitted 23 July, 2023;
originally announced July 2023.
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Dense plasma irradiated platinum with improved spin Hall effect
Authors:
Sachin Kumar,
Sourabh Manna,
John Rex Mohan,
Utkarsh Shashank,
Jospeh Vimal,
Mayank Mishra,
Surbhi Gupta,
Hironori Asada,
Yasuhiro Fukuma,
Rajdeep Singh Rawat,
Rohit Medwal
Abstract:
The impurity incorporation in host high-spin orbit coupling materials like platinum has shown improved charge-to-spin conversion by modifying the up-spin and down-spin electron trajectories by bending or skewing them in opposite directions. This enables efficient generation, manipulation, and transport of spin currents. In this study, we irradiate the platinum with non-focus dense plasma to incorp…
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The impurity incorporation in host high-spin orbit coupling materials like platinum has shown improved charge-to-spin conversion by modifying the up-spin and down-spin electron trajectories by bending or skewing them in opposite directions. This enables efficient generation, manipulation, and transport of spin currents. In this study, we irradiate the platinum with non-focus dense plasma to incorporate the oxygen ion species. We systematically analyze the spin Hall angle of the oxygen plasma irradiated Pt films using spin torque ferromagnetic resonance. Our results demonstrate a 2.4 times enhancement in the spin Hall effect after plasma treatment of Pt as compared to pristine Pt. This improvement is attributed to the introduction of disorder and defects in the Pt lattice, which enhances the spin-orbit coupling and leads to more efficient charge-to-spin conversion without breaking the spin-orbit torque symmetries. Our findings offer a new method of dense plasma-based modification of material for the development of advanced spintronic devices based on Pt and other heavy metals.
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Submitted 22 July, 2023;
originally announced July 2023.
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Interfacial origin of unconventional spin-orbit torque in Py/$γ-$IrMn$_{3}$
Authors:
Akash Kumar,
Pankhuri Gupta,
Niru Chowdhury,
Kacho Imtiyaz Ali Khan,
Utkarsh Shashank,
Surbhi Gupta,
Yasuhiro Fukuma,
Sujeet Chaudhary,
Pranaba Kishor Muduli
Abstract:
Angle-resolved spin-torque ferromagnetic resonance measurements are carried out in heterostructures consisting of Py (Ni$_{81}$Fe$_{19}$) and a noncollinear antiferromagnetic quantum material $γ-$IrMn$_{3}$. The structural characterization reveals that $γ-$IrMn$_{3}$ is polycrystalline in nature. A large exchange bias of 158~Oe is found in Py/$γ-$IrMn$_{3}$ at room temperature, while $γ-$IrMn…
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Angle-resolved spin-torque ferromagnetic resonance measurements are carried out in heterostructures consisting of Py (Ni$_{81}$Fe$_{19}$) and a noncollinear antiferromagnetic quantum material $γ-$IrMn$_{3}$. The structural characterization reveals that $γ-$IrMn$_{3}$ is polycrystalline in nature. A large exchange bias of 158~Oe is found in Py/$γ-$IrMn$_{3}$ at room temperature, while $γ-$IrMn$_{3}$/Py and Py/Cu/$γ-$IrMn$_{3}$ exhibited no exchange bias. Regardless of the exchange bias and stacking sequence, we observe a substantial unconventional out-of-plane anti-damping torque when $γ-$IrMn$_{3}$ is in direct contact with Py. The magnitude of the out-of-plane spin-orbit torque efficiency is found to be twice as large as the in-plane spin-orbit torque efficiency. The unconventional spin-orbit torque vanishes when a Cu spacer is introduced between Py and $γ-$IrMn$_{3}$, indicating that the unconventional spin-orbit torque in this system originates at the interface. These findings are important for realizing efficient antiferromagnet-based spintronic devices via interfacial engineering.
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Submitted 8 May, 2023;
originally announced May 2023.
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Secondary spin current driven efficient THz spintronic emitters
Authors:
Piyush Agarwal,
Yingshu Yang,
Rohit Medwal,
Hironori Asada,
Yasuhiro Fukuma,
Marco Battiato,
Ranjan Singh
Abstract:
Femtosecond laser-induced photoexcitation of ferromagnet (FM)/heavy metal (HM) heterostructures have attracted attention by emitting broadband terahertz frequencies. The phenomenon relies on the formation of ultrafast spin current, which is largely attributed to the direct photoexcitation of the FM layer. However, we reveal that during the process, the FM layer also experiences a secondary excitat…
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Femtosecond laser-induced photoexcitation of ferromagnet (FM)/heavy metal (HM) heterostructures have attracted attention by emitting broadband terahertz frequencies. The phenomenon relies on the formation of ultrafast spin current, which is largely attributed to the direct photoexcitation of the FM layer. However, we reveal that during the process, the FM layer also experiences a secondary excitation led by the hot electrons from the HM layer that travel across the FM/HM interface and transfer additional energy in the FM. Thus, the generated secondary spins enhance the total spin current formation and lead to amplified spintronic terahertz emission. The results also emphasize the significance of the secondary spin current, which even exceeds the primary spin currents when FM/HM heterostructures with thicker HM are used. An analytical model is developed to provide deeper insights into the microscopic processes within the individual layers, underlining the generalized ultrafast superdiffusive spin-transport mechanism.
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Submitted 29 November, 2022; v1 submitted 28 November, 2022;
originally announced November 2022.
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Room temperature charge-to-spin conversion from q-2DEG at SrTiO3-based interfaces
Authors:
Utkarsh Shashank,
Angshuman Deka,
Chen Ye,
Surbhi Gupta,
Rohit Medwal,
Rajdeep Singh Rawat,
Hironori Asada,
X. Renshaw Wang,
Yasuhiro Fukuma
Abstract:
Interfacial two-dimensional electron gas (2DEG), especially the SrTiO3-based ones at the unexpected interface of insulators, have emerged to be a promising candidate for efficient charge-spin current interconversion. In this article, to gain insight into the mechanism of the charge-spin current interconversion at the oxide-based 2DEG, we focused on conducting interfaces between insulating SrTiO3 a…
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Interfacial two-dimensional electron gas (2DEG), especially the SrTiO3-based ones at the unexpected interface of insulators, have emerged to be a promising candidate for efficient charge-spin current interconversion. In this article, to gain insight into the mechanism of the charge-spin current interconversion at the oxide-based 2DEG, we focused on conducting interfaces between insulating SrTiO3 and two types of aluminium-based amorphous insulators, namely SrTiO3/AlN and SrTiO3/Al2O3, and estimated their charge-spin conversion efficiency, θ_cs. The two types of amorphous insulators were selected to explicitly probe the overlooked contribution of oxygen vacancy to the θ_cs. We proposed a mechanism to explain results of spin-torque ferromagnetic resonance (ST-FMR) measurements and developed an analysis protocol to reliably estimate the θ_cs of the oxide based 2DEG. The resultant θ_cs/t, where t is the thickness of the 2DEG, were estimated to be 0.244 nm-1 and 0.101 nm-1 for the SrTiO3/AlN and SrTiO3/Al2O3, respectively, and they are strikingly comparable to their crystalline counterparts. Furthermore, we also observe a large direct current modulation of resonance linewidth in SrTiO3/AlN samples, confirming its high θ_cs and attesting an oxygen-vacancy-enabled charge-spin conversion. Our findings emphasize the defects' contribution to the charge-spin interconversion, especially in the oxide-based low dimensional systems, and provide a way to create and enhance charge-spin interconversion via defect engineering.
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Submitted 7 November, 2022;
originally announced November 2022.
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Disentanglement of intrinsic and extrinsic side-jump scattering induced spin Hall effect in N-implanted Pt
Authors:
Utkarsh Shashank,
Yoji Nakamura,
Yu Kusaba,
Takafumi Tomoda,
Razia Nongjai,
Asokan Kandasami,
Rohit Medwal,
Rajdeep Singh Rawat,
Hironori Asada,
Surbhi Gupta,
Yasuhiro Fukuma
Abstract:
The rapidly evolving utilization of spin Hall effect (SHE) arising from spin-orbit coupling in 5d transition metals and alloys have made giant strides in the development of designing low-power, robust and non-volatile magnetic memory. Recent studies, on incorporating non-metallic lighter elements such as oxygen, nitrogen and sulfur into 5d transition metals, have shown an enhancement in damping-li…
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The rapidly evolving utilization of spin Hall effect (SHE) arising from spin-orbit coupling in 5d transition metals and alloys have made giant strides in the development of designing low-power, robust and non-volatile magnetic memory. Recent studies, on incorporating non-metallic lighter elements such as oxygen, nitrogen and sulfur into 5d transition metals, have shown an enhancement in damping-like torque efficiency θ_DL due to the modified SHE, but the mechanism behind this enhancement is not clear. In this paper, we study θ_DL at different temperatures (100-293 K) to disentangle the intrinsic and extrinsic side-jump scattering induced spin Hall effect in N-implanted Pt. We observe a crossover of intrinsic to extrinsic side-jump mechanism as the implantation dose increases from 2*10^16 ions/cm2 to 1*10^17 ions/cm2. A sudden decrease in the intrinsic spin Hall conductivity is counterbalanced by the increase in the side-jump induced SHE efficiency. These results conclude that studying θ_DL as a function of implantation dose, and also as a function of temperature, is important to understand the physical mechanism contributing to SHE, which has so far been unexplored in incorporating non-metallic element in 5d transition metals.
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Submitted 7 November, 2022;
originally announced November 2022.
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Electric-field-induced parametric excitation of exchange magnons in a CoFeB/MgO junction
Authors:
Angshuman Deka,
Bivas Rana,
Ryo Anami,
Katsuya Miura,
Hiromasa Takahashi,
YoshiChika Otani,
Yasuhiro Fukuma
Abstract:
Electric-field controlled magnetization dynamics is an important integrant in low power spintronic devices. In this letter, we demonstrate electric-field induced parametric excitation for CoFeB/MgO junctions by using interfacial in-plane magnetic anisotropy. When the in-plane magnetic anisotropy and the external magnetic field are parallel to each other, magnons are efficiently excited by using el…
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Electric-field controlled magnetization dynamics is an important integrant in low power spintronic devices. In this letter, we demonstrate electric-field induced parametric excitation for CoFeB/MgO junctions by using interfacial in-plane magnetic anisotropy. When the in-plane magnetic anisotropy and the external magnetic field are parallel to each other, magnons are efficiently excited by using electric-field induced parametric excitation. Its wavelength and wavenumber are tuned by changing input power and frequency of the applied voltage. A generalized phenomenological model is developed to explain the underlying role of the electric-field torque. Electrical excitation with no Joule heating offers a good opportunity for developing magnonic devices and exploring various nonlinear dynamics in magnetic systems.
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Submitted 25 December, 2021; v1 submitted 22 December, 2021;
originally announced December 2021.
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Active Magnetoelectric Control of Terahertz Spin Current
Authors:
Avinash Chaurasiya,
Ziqi Li,
Rohit Medwal,
Surbhi Gupta,
John Rex Mohan,
Yasuhiro Fukuma,
Hironori Asada,
Elbert E. M. Chia,
Rajdeep Singh Rawat
Abstract:
Electrical control of photogenerated THz spin current pulses from a spintronic emitter has been at the forefront for the development of scalable, cost-efficient, wideband opto-spintronics devices. Artificially combined ferroelectric and ferromagnet heterostructure provides the potential avenue to control the spin dynamics efficiently utilizing the magnetoelectric coupling. The demonstration of the…
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Electrical control of photogenerated THz spin current pulses from a spintronic emitter has been at the forefront for the development of scalable, cost-efficient, wideband opto-spintronics devices. Artificially combined ferroelectric and ferromagnet heterostructure provides the potential avenue to control the spin dynamics efficiently utilizing the magnetoelectric coupling. The demonstration of the electric field control of spin dynamics has so far been limited up to gigahertz frequencies. Here, we demonstrate the electric field mediated piezoelectric strain control of photogenerated THz spin current pulse from a multiferroic spintronic emitter. The phase reversal of the THz spin current pulse is obtained from the combined effect of piezoelectric strain and a small constant magnetic field applied opposite to the initial magnetization of the ferromagnet. The piezoelectric strain-controlled phase switching of THz spin current thus opens a door to develop efficient strain engineered scalable on-chip THz spintronics devices.
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Submitted 27 November, 2021;
originally announced November 2021.
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Important role of magnetization precession angle measurement in inverse spin Hall effect induced by spin pumping
Authors:
Surbhi Gupta,
Rohit Medwal,
Daichi Kodama,
Kouta Kondou,
YoshiChika Otani,
Yasuhiro Fukuma
Abstract:
Here, we investigate spin Hall angle of Pt in Ni80Fe20/Pt bilayer system by using a broadband spin pumping and inverse spin Hall effect measurement. An out-of-plane excitation geometry with application of external magnetic field perpendicular to the charge current direction is utilized in order to suppress unwanted galvanomagnetic effects. Magnetization precession angle on ferromagnetic resonance…
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Here, we investigate spin Hall angle of Pt in Ni80Fe20/Pt bilayer system by using a broadband spin pumping and inverse spin Hall effect measurement. An out-of-plane excitation geometry with application of external magnetic field perpendicular to the charge current direction is utilized in order to suppress unwanted galvanomagnetic effects. Magnetization precession angle on ferromagnetic resonance for wide excitation frequency range (4-14 GHz) is estimated from the rectification voltage of anisotropic magnetoresistance (AMR) and a conventional method of using microwave power in a coplanar waveguide. A marked difference in the precession angle profiles for the different methods is observed, resulting in the large variation in estimated values of spin current density at Ni80Fe20/Pt interface. The frequency dependence of the spin current density estimated using AMR effect is found to be similar to that of the inverse spin Hall voltage. We obtain the frequency-invariant spin Hall angle of 0.067.
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Submitted 2 January, 2017;
originally announced January 2017.
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Epitaxial growth of diluted magnetic semiconductor Ge1-xCrxTe with high Cr composition
Authors:
Y. Fukuma,
H. Asada,
S. Senba,
T. Koyanagi
Abstract:
IV-VI diluted magnetic semiconductor Ge1-xCrxTe layers up to x=0.1 were grown on SrF2 substrates by molecular beam epitaxy. In site reflection high-energy electron diffraction shows a streaky pattern with sixfold symmetry in the plane for the Ge1-xCrxTe layer, implying an epitaxial growth of Ge1-xCrxTe [111]/SrF2 [111]. A clear hysteresis loop is observed in the anomalous Hall effect measurements…
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IV-VI diluted magnetic semiconductor Ge1-xCrxTe layers up to x=0.1 were grown on SrF2 substrates by molecular beam epitaxy. In site reflection high-energy electron diffraction shows a streaky pattern with sixfold symmetry in the plane for the Ge1-xCrxTe layer, implying an epitaxial growth of Ge1-xCrxTe [111]/SrF2 [111]. A clear hysteresis loop is observed in the anomalous Hall effect measurements due to the strong spin-orbit interaction in the host GeTe. The Curie temperature increases with increasing Cr composition up to 200 K, but there is no clear dependence of the Curie temperature on the hole concentration, implying that the mechanism of the ferromagnetic interaction among Cr ions is different from Mn doped diluted magnetic semiconductors.
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Submitted 28 February, 2016;
originally announced February 2016.
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Fermi level dependent charge-to-spin current conversion by Dirac surface state of topological insulators
Authors:
K. Kondou,
R. Yoshimi,
A. Tsukazaki,
Y. Fukuma,
J. Matsuno,
K. S. Takahashi,
M. Kawasaki,
Y. Tokura,
Y. Otani
Abstract:
The spin-momentum locking at the Dirac surface state of a topological insulator (TI) offers a distinct possibility of a highly efficient charge-to-spin current (C-S) conversion compared with spin Hall effects in conventional paramagnetic metals. For the development of TI-based spin current devices, it is essential to evaluate its conversion efficiency quantitatively as a function of the Fermi leve…
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The spin-momentum locking at the Dirac surface state of a topological insulator (TI) offers a distinct possibility of a highly efficient charge-to-spin current (C-S) conversion compared with spin Hall effects in conventional paramagnetic metals. For the development of TI-based spin current devices, it is essential to evaluate its conversion efficiency quantitatively as a function of the Fermi level EF position. Here we exemplify a coefficient of qICS to characterize the interface C-S conversion effect by using spin torque ferromagnetic resonance (ST-FMR) for (Bi1-xSbx)2Te3 thin films whose EF is tuned across the band gap. In bulk insulating conditions, interface C-S conversion effect via Dirac surface state is evaluated as nearly constant large values of qICS, reflecting that the qICS is inversely proportional to the Fermi velocity vF that is almost constant. However, when EF traverses through the Dirac point, the qICS is remarkably suppressed possibly due to the degeneracy of surface spins or instability of helical spin structure. These results demonstrate that the fine tuning of the EF in TI based heterostructures is critical to maximizing the efficiency using the spin-momentum locking mechanism.
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Submitted 13 October, 2015;
originally announced October 2015.
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Spin relaxation characteristics in Ag nanowire covered with various oxides
Authors:
Shutaro Karube,
Hiroshi Idzuchi,
Kouta Kondou,
Yasuhiro Fukuma,
YoshiChika Otani
Abstract:
We have studied spin relaxation characteristics in a Ag nanowire covered with various oxide layers of Bi2O3, Al2O3, HfO2, MgO or AgOx by using non-local spin valve structures. The spin-flip probability, a ratio of momentum relaxation time to spin relaxation time at 10 K, exhibits a gradual increase with an atomic number of the oxide constituent elements, Mg, Al, Ag and Hf. Surprisingly the Bi2O3 c…
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We have studied spin relaxation characteristics in a Ag nanowire covered with various oxide layers of Bi2O3, Al2O3, HfO2, MgO or AgOx by using non-local spin valve structures. The spin-flip probability, a ratio of momentum relaxation time to spin relaxation time at 10 K, exhibits a gradual increase with an atomic number of the oxide constituent elements, Mg, Al, Ag and Hf. Surprisingly the Bi2O3 capping was found to increase the probability by an order of magnitude compared with other oxide layers. This finding suggests the presence of an additional spin relaxation mechanism such as Rashba effect at the Ag/Bi2O3 interface, which cannot be explained by the simple Elliott-Yafet mechanism via phonon, impurity and surface scatterings. The Ag/Bi2O3 interface may provide functionality as a spin to charge interconversion layer.
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Submitted 6 September, 2015; v1 submitted 24 July, 2015;
originally announced July 2015.
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Effect of anisotropic spin absorption on the Hanle effect in lateral spin valves
Authors:
H. Idzuchi,
Y. Fukuma,
S. Takahashi,
S. Maekawa,
Y. Otani
Abstract:
We have succeeded in fully describing dynamic properties of spin current including the different spin absorption mechanism for longitudinal and transverse spins in lateral spin valves, which enables to elucidate intrinsic spin transport and relaxation mechanism in the nonmagnet. The deduced spin lifetimes are found independent of the contact type. From the transit-time distribution of spin current…
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We have succeeded in fully describing dynamic properties of spin current including the different spin absorption mechanism for longitudinal and transverse spins in lateral spin valves, which enables to elucidate intrinsic spin transport and relaxation mechanism in the nonmagnet. The deduced spin lifetimes are found independent of the contact type. From the transit-time distribution of spin current extracted from the Fourier transform in Hanle measurement data, the velocity of the spin current in Ag with Py/Ag Ohmic contact turns out much faster than that expected from the widely used model.
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Submitted 28 December, 2013;
originally announced December 2013.
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5d transition metal oxide IrO2 as a material for spin current detection
Authors:
Kohei Fujiwara,
Yasuhiro Fukuma,
Jobu Matsuno,
Hiroshi Idzuchi,
Yasuhiro Niimi,
YoshiChika Otani,
Hidenori Takagi
Abstract:
Devices based on a pure spin current (a flow of spin angular momentum) have been attracting increasing attention as key ingredients for low-dissipation electronics. To integrate such spintronics devices into charge-based technologies, an electric detection of spin current is essential. Inverse spin Hall effect converts a spin current into an electric voltage through spin-orbit coupling. Noble meta…
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Devices based on a pure spin current (a flow of spin angular momentum) have been attracting increasing attention as key ingredients for low-dissipation electronics. To integrate such spintronics devices into charge-based technologies, an electric detection of spin current is essential. Inverse spin Hall effect converts a spin current into an electric voltage through spin-orbit coupling. Noble metals such as Pt and Pd, and also Cu-based alloys, owing to the large direct spin Hall effect, have been regarded as potential materials for a spin-current injector. Those materials, however, are not promising as a spin-current detector based on inverse spin Hall effect. Their spin Hall resistivity rho_SH, representing the performance as a detector, is not large enough mainly due to their low charge resistivity. Here we demonstrate that heavy transition metal oxides can overcome such limitations inherent to metal-based spintronics materials. A binary 5d transition metal oxide IrO2, owing to its large resistivity as well as a large spin-orbit coupling associated with 5d character of conduction electrons, was found to show a gigantic rho_SH ~ 38 microohm cm at room temperature, one order of magnitude larger than those of noble metals and Cu-based alloys and even comparable to those of atomic layer thin film of W and Ta.
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Submitted 8 July, 2013;
originally announced July 2013.
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Towards coherent spin precession in pure-spin current
Authors:
Hiroshi Idzuchi,
Yasuhiro Fukuma,
YoshiChika Otani
Abstract:
Non-local spin injection in lateral spin valves generates a pure spin current which is a diffusive flow of spins (i.e. spin angular momentums) with no net charge flow. The diffusive spins lose phase coherency in precession while undergoing frequent collisions and these events lead to a broad distribution of the dwell time in a transport channel between the injector and the detector. Here we show t…
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Non-local spin injection in lateral spin valves generates a pure spin current which is a diffusive flow of spins (i.e. spin angular momentums) with no net charge flow. The diffusive spins lose phase coherency in precession while undergoing frequent collisions and these events lead to a broad distribution of the dwell time in a transport channel between the injector and the detector. Here we show the lateral spin-valves with dual injectors enable us to detect a genuine in-plane precession signal from the Hanle effect, demonstrating the phase coherency in the in-plane precession is improved with an increase of the channel length. The coherency in the spin precession shows a universal behavior as a function of the normalized separation between the injector and the detector in material-independent fashion for metals and semiconductors including graphene.
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Submitted 29 June, 2012;
originally announced June 2012.
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Detection of picosecond magnetization dynamics of 50 nm magnetic dots down to the single dot regime
Authors:
Bivas Rana,
Dheeraj Kumar,
Saswati Barman,
Semanti Pal,
Yasuhiro Fukuma,
YoshiChika Otani,
Anjan Barman
Abstract:
We report an all-optical time-domain detection of picosecond magnetization dynamics of arrays of 50 nm Ni80Fe20 (permalloy) dots down to the single nanodot regime. In the single nanodot regime the dynamics reveals one dominant resonant mode corresponding to the edge mode of the 50 nm dot with slightly higher damping than that of the unpatterned thin film. With the increase in areal density of the…
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We report an all-optical time-domain detection of picosecond magnetization dynamics of arrays of 50 nm Ni80Fe20 (permalloy) dots down to the single nanodot regime. In the single nanodot regime the dynamics reveals one dominant resonant mode corresponding to the edge mode of the 50 nm dot with slightly higher damping than that of the unpatterned thin film. With the increase in areal density of the array both the precession frequency and damping increases significantly due to the increase in magnetostatic interactions between the nanodots and a mode splitting and sudden jump in apparent damping are observed at an edge-to-edge separation of 50 nm.
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Submitted 20 November, 2011;
originally announced November 2011.
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All-Optical Excitation and Detection of Picosecond Dynamics of Ordered Arrays of Nanomagnets with Varying Areal Density
Authors:
Bivas Rana,
Semanti Pal,
Saswati Barman,
Yasuhiro Fukuma,
YoshiChika Otani,
Anjan Barman
Abstract:
We have demonstrated optical excitation and detection of collective precessional dynamics in arrays of coupled Ni80Fe20 (permalloy) nanoelements with systematically varying areal density by an all-optical time-resolved Kerr microscope. We have applied this technique to precisely determine three different collective regimes in these arrays. At very high areal density, a single uniform collective mo…
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We have demonstrated optical excitation and detection of collective precessional dynamics in arrays of coupled Ni80Fe20 (permalloy) nanoelements with systematically varying areal density by an all-optical time-resolved Kerr microscope. We have applied this technique to precisely determine three different collective regimes in these arrays. At very high areal density, a single uniform collective mode is observed where the edge modes of the constituent elements are suppressed. At intermediate areal densities, three nonuniform collective modes appear and at very low areal density, we observe noncollective dynamics and only the centre and edge modes of the constituent elements appear.
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Submitted 20 November, 2011; v1 submitted 21 June, 2011;
originally announced June 2011.
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Spin relaxation mechanism in Silver nanowires covered with MgO protection layer
Authors:
H. Idzuchi,
Y. Fukuma,
L. Wang,
Y. Otani
Abstract:
Spin-flip mechanism in Ag nanowires with MgO surface protection layers has been investigated by means of nonlocal spin valve measurements using Permalloy/Ag lateral spin valves. The spin flip events mediated by surface scattering are effectively suppressed by the MgO capping layer. The spin relaxation process was found to be well described in the framework of Elliott-Yafet mechanism and then the p…
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Spin-flip mechanism in Ag nanowires with MgO surface protection layers has been investigated by means of nonlocal spin valve measurements using Permalloy/Ag lateral spin valves. The spin flip events mediated by surface scattering are effectively suppressed by the MgO capping layer. The spin relaxation process was found to be well described in the framework of Elliott-Yafet mechanism and then the probabilities of spin-filp scattering for phonon or impurity mediated momentum scattering is precisely determined in the nanowires. The temperature dependent spin-lattice relaxation follows the Bloch-Grüneisen theory and falls on to a universal curve for the monovalent metals as in the Monod and Beuneu scaling determined from the conduction electron spin resonance data for bulk.
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Submitted 29 January, 2012; v1 submitted 19 April, 2011;
originally announced April 2011.
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Giant enhancement of spin accumulation and long-distance spin precession in metallic lateral spin valves
Authors:
Y. Fukuma,
L. Wang,
H. Idzuchi,
S. Takahashi,
S. Maekawa,
Y. Otani
Abstract:
The nonlocal spin injection in lateral spin valves is highly expected to be an effective method to generate a pure spin current for potential spintronic application. However, the spin valve voltage, which decides the magnitude of the spin current flowing into an additional ferromagnetic wire, is typically of the order of 1 μV. Here we show that lateral spin valves with low resistive NiFe/MgO/Ag ju…
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The nonlocal spin injection in lateral spin valves is highly expected to be an effective method to generate a pure spin current for potential spintronic application. However, the spin valve voltage, which decides the magnitude of the spin current flowing into an additional ferromagnetic wire, is typically of the order of 1 μV. Here we show that lateral spin valves with low resistive NiFe/MgO/Ag junctions enable the efficient spin injection with high applied current density, which leads to the spin valve voltage increased hundredfold. Hanle effect measurements demonstrate a long-distance collective 2-pi spin precession along a 6 μm long Ag wire. These results suggest a route to faster and manipulable spin transport for the development of pure spin current based memory, logic and sensing devices.
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Submitted 9 May, 2011; v1 submitted 4 March, 2011;
originally announced March 2011.
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Optical detection of spin transport in non-magnetic metals
Authors:
F. Fohr,
Y. Fukuma,
S. Kaltenborn,
L. Wang,
J. Hamrle,
H. Schultheiß,
A. A. Serga,
H. C. Schneider,
Y. Otani,
B. Hillebrands
Abstract:
We determine the dynamic magnetization induced in non-magnetic metal wedges composed of silver, copper and platinum by means of Brillouin light scattering (BLS) microscopy. The magnetization is transferred from a ferromagnetic Ni80Fe20 layer to the metal wedge via the spin pumping effect. The spin pumping efficiency can be controlled by adding an insulating but transparent interlayer between the m…
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We determine the dynamic magnetization induced in non-magnetic metal wedges composed of silver, copper and platinum by means of Brillouin light scattering (BLS) microscopy. The magnetization is transferred from a ferromagnetic Ni80Fe20 layer to the metal wedge via the spin pumping effect. The spin pumping efficiency can be controlled by adding an insulating but transparent interlayer between the magnetic and non-magnetic layer. By comparing the experimental results to a dynamical macroscopic spin-transport model we determine the transverse relaxation time of the pumped spin current which is much smaller than the longitudinal relaxation time.
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Submitted 27 April, 2011; v1 submitted 21 November, 2010;
originally announced November 2010.
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Belle II Technical Design Report
Authors:
T. Abe,
I. Adachi,
K. Adamczyk,
S. Ahn,
H. Aihara,
K. Akai,
M. Aloi,
L. Andricek,
K. Aoki,
Y. Arai,
A. Arefiev,
K. Arinstein,
Y. Arita,
D. M. Asner,
V. Aulchenko,
T. Aushev,
T. Aziz,
A. M. Bakich,
V. Balagura,
Y. Ban,
E. Barberio,
T. Barvich,
K. Belous,
T. Bergauer,
V. Bhardwaj
, et al. (387 additional authors not shown)
Abstract:
The Belle detector at the KEKB electron-positron collider has collected almost 1 billion Y(4S) events in its decade of operation. Super-KEKB, an upgrade of KEKB is under construction, to increase the luminosity by two orders of magnitude during a three-year shutdown, with an ultimate goal of 8E35 /cm^2 /s luminosity. To exploit the increased luminosity, an upgrade of the Belle detector has been pr…
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The Belle detector at the KEKB electron-positron collider has collected almost 1 billion Y(4S) events in its decade of operation. Super-KEKB, an upgrade of KEKB is under construction, to increase the luminosity by two orders of magnitude during a three-year shutdown, with an ultimate goal of 8E35 /cm^2 /s luminosity. To exploit the increased luminosity, an upgrade of the Belle detector has been proposed. A new international collaboration Belle-II, is being formed. The Technical Design Report presents physics motivation, basic methods of the accelerator upgrade, as well as key improvements of the detector.
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Submitted 1 November, 2010;
originally announced November 2010.
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Effective non-vanishing of global sections of multiple adjoint bundles for polarized 4-folds
Authors:
Yoshiaki Fukuma
Abstract:
Let X be a smooth complex projective variety of dimension 4 and let L be an ample line bundle on X. In this paper, we study a natural number m such that h^{0}(m(K_{X}+L))>0 for any polarized 4-folds (X,L) with κ(K_{X}+L)\geq 0.
Let X be a smooth complex projective variety of dimension 4 and let L be an ample line bundle on X. In this paper, we study a natural number m such that h^{0}(m(K_{X}+L))>0 for any polarized 4-folds (X,L) with κ(K_{X}+L)\geq 0.
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Submitted 22 October, 2010;
originally announced October 2010.
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Dynamics of coupled vortices in a pair of ferromagnetic disks
Authors:
Satoshi Sugimoto,
Yasuhiro Fukuma,
Shinya Kasai,
Takashi Kimura,
Anjan Barman,
YoshiChika Otani
Abstract:
We here experimentally demonstrate that coupled gyration modes can be resonantly excited primarily by the ac current in a pair of ferromagnetic disks with varied separating distance. The sole gyrotropic mode clearly splits into a higher and a lower frequency modes for different configurations of polarities via dipolar interaction. These experimental results indicate that the magnetostatically coup…
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We here experimentally demonstrate that coupled gyration modes can be resonantly excited primarily by the ac current in a pair of ferromagnetic disks with varied separating distance. The sole gyrotropic mode clearly splits into a higher and a lower frequency modes for different configurations of polarities via dipolar interaction. These experimental results indicate that the magnetostatically coupled pair of vortices behaves similar to a diatomic molecule with bonding and anti-bonding states. These findings lead to the possible extension of designing the magnonic band structure in a chain or an array of vortices.
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Submitted 19 April, 2011; v1 submitted 17 September, 2010;
originally announced September 2010.
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A numerical characterization of polarized manifolds (X,L) with K_{X}=-(n-i)L by the ith sectional geometric genus and the ith Δ-genus
Authors:
Yoshiaki Fukuma
Abstract:
Let (X,L) be a polarized manifold of dimension n. In this paper, by using the ith sectional geometric genus and the ith Δ-genus, we will give a numerical characterization of (X,L) with K_{X}=-(n-i)L for the following cases (i) i=2, (ii) i=3 and n \geq 5, (iii) max{2, dim Bs|L|+2} \leq i \leq n-1.
Let (X,L) be a polarized manifold of dimension n. In this paper, by using the ith sectional geometric genus and the ith Δ-genus, we will give a numerical characterization of (X,L) with K_{X}=-(n-i)L for the following cases (i) i=2, (ii) i=3 and n \geq 5, (iii) max{2, dim Bs|L|+2} \leq i \leq n-1.
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Submitted 25 May, 2010;
originally announced May 2010.
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Remarks on the second sectional geometric genus of quasi-polarized manifolds and their applications
Authors:
Yoshiaki Fukuma
Abstract:
In our previous papers, we investigated a lower bound for the second sectional geometric genus $g_{2}(X,L)$ of $n$-dimensional polarized manifolds $(X,L)$ and by using these, we studied the dimension of global sections of $K_{X}+tL$ with $t\geq 2$. In this paper, we consider the case where $(X,L)$ is a quasi-polarized manifold. First we will prove $g_{2}(X,L)\geq h^{1}(\mathcal{O}_{X})$ for the fo…
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In our previous papers, we investigated a lower bound for the second sectional geometric genus $g_{2}(X,L)$ of $n$-dimensional polarized manifolds $(X,L)$ and by using these, we studied the dimension of global sections of $K_{X}+tL$ with $t\geq 2$. In this paper, we consider the case where $(X,L)$ is a quasi-polarized manifold. First we will prove $g_{2}(X,L)\geq h^{1}(\mathcal{O}_{X})$ for the following cases: (a) $n=3$, $κ(X)=-\infty$ and $κ(K_{X}+L)\geq 0$. (b) $n\geq 3$ and $κ(X)\geq 0$. Moreover, by using this inequality, we will study $h^{0}(K_{X}+tL)$ for the case where $(X,L)$ is a quasi-polarized 3-fold.
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Submitted 2 August, 2010; v1 submitted 30 March, 2010;
originally announced March 2010.
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Effective non-vanishing of global sections of multiple adjoint bundles for polarized 3-folds
Authors:
Yoshiaki Fukuma
Abstract:
Let $X$ be a smooth complex projective variety of dimension three and let $L$ be an ample line bundle on $X$. In this paper, we provide a lower bound of the dimension of the global sections of $m(K_{X}+L)$ under the assumption that $κ(K_{X}+L)$ is non-negative. In particular, we get the following: (1) if $κ(K_{X}+L)$ is greater than or equal to zero and less than or equal to two, then…
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Let $X$ be a smooth complex projective variety of dimension three and let $L$ be an ample line bundle on $X$. In this paper, we provide a lower bound of the dimension of the global sections of $m(K_{X}+L)$ under the assumption that $κ(K_{X}+L)$ is non-negative. In particular, we get the following: (1) if $κ(K_{X}+L)$ is greater than or equal to zero and less than or equal to two, then $h^{0}(K_{X}+L)$ is positive. (2) If $κ(K_{X}+L)$ is equal to three, then $h^{0}(2(K_{X}+L))$ is greater than or equal to three. Moreover we get a classification of $(X,L)$ such that $κ(K_{X}+L)$ is equal to three and $h^{0}(2(K_{X}+L))$ is equal to three or four.
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Submitted 15 October, 2009;
originally announced October 2009.
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A generalization of curve genus for ample vector bundles, II
Authors:
Yoshiaki Fukuma,
Hironobu Ishihara
Abstract:
Let $X$ be a compact complex manifold of dimension $n\ge 2$ and $\ce$ an ample vector bundle of rank $r<n$ on $X$. As the continuation of Part I, we further study the properties of $g(X,\ce)$ that is an invariant for pairs $(X,\ce)$ and is equal to curve genus when $r=n-1$. Main results are the classifications of $(X,\ce)$ with $g(X,\ce)=2$ (resp. 3) when $\ce$ has a regular section (resp.…
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Let $X$ be a compact complex manifold of dimension $n\ge 2$ and $\ce$ an ample vector bundle of rank $r<n$ on $X$. As the continuation of Part I, we further study the properties of $g(X,\ce)$ that is an invariant for pairs $(X,\ce)$ and is equal to curve genus when $r=n-1$. Main results are the classifications of $(X,\ce)$ with $g(X,\ce)=2$ (resp. 3) when $\ce$ has a regular section (resp. $\ce$ is ample and spanned) and $1<r<n-1$.
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Submitted 22 September, 1997;
originally announced September 1997.
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A lower bound for $K_{X}L$ of quasi-polarized surfaces $(X,L)$ with non-negative Kodaira dimension
Authors:
Yoshiaki Fukuma
Abstract:
Let $X$ be a smooth projective surface over the complex number field and let $L$ be a nef-big divisor on $X$. Here we consider the following conjecture; If the Kodaira dimension $κ(X)\geq 0$, then $K_{X}L\geq 2q(X)-4$, where $q(X)$ is the irregularity of $X$. In this paper, we prove that this conjecture is true if (1) the case in which $κ(X)=0$ or 1, (2) the case in which $κ(X)=2$ and…
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Let $X$ be a smooth projective surface over the complex number field and let $L$ be a nef-big divisor on $X$. Here we consider the following conjecture; If the Kodaira dimension $κ(X)\geq 0$, then $K_{X}L\geq 2q(X)-4$, where $q(X)$ is the irregularity of $X$. In this paper, we prove that this conjecture is true if (1) the case in which $κ(X)=0$ or 1, (2) the case in which $κ(X)=2$ and $h^{0}(L)\geq 2$, or (3) the case in which $κ(X)=2$, $X$ is minimal, $h^{0}(L)=1$, and $L$ satisfies some conditions.
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Submitted 14 July, 1996;
originally announced July 1996.