The Ladder and Readout Cables of Intermediate Silicon Strip Detector for sPHENIX
Authors:
Y. Akiba,
H. Aso,
J. T. Bertaux,
D. Cacace,
K. Y. Chen,
K. Y. Cheng,
A. Enokizono,
H. Enyo,
K. Fujiki,
Y. Fujino,
M. Fujiiwara,
T. Hachiya,
T. Harada,
S. Hasegawa,
M. Hata,
B. Hong,
J. Hwang,
T. Ichino,
M. Ikemoto,
H. Imagawa,
H. Imai,
Y. Ishigaki,
M. Isshiki,
K. Iwatsuki,
R. Kane M. Kano
, et al. (46 additional authors not shown)
Abstract:
A new silicon-strip-type detector was developed for precise charged-particle tracking in the central rapidity region of heavy ion collisions. A new detector and collaboration at the Relativistic Heavy Ion Collider at Brookhaven National Laboratory is sPHENIX, which is a major upgrade of the PHENIX detector. The intermediate tracker (INTT) is part of the advanced tracking system of the sPHENIX dete…
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A new silicon-strip-type detector was developed for precise charged-particle tracking in the central rapidity region of heavy ion collisions. A new detector and collaboration at the Relativistic Heavy Ion Collider at Brookhaven National Laboratory is sPHENIX, which is a major upgrade of the PHENIX detector. The intermediate tracker (INTT) is part of the advanced tracking system of the sPHENIX detector complex together with a CMOS monolithic-active-pixel-sensor based silicon-pixel vertex detector, a time-projection chamber, and a micromegas-based detector. The INTT detector is barrel shaped and comprises 56 silicon ladders. Two different types of strip sensors of 78~$μm$ pitch and 320~$μm$ thick are mounted on each half of a silicon ladder. Each strip sensor is segmented into 8$\times$2 and 5$\times$2 blocks with lengths of 16 and 20 mm. Strips are read out with a silicon strip-readout (FPHX) chip. In order to transmit massive data from the FPHX to the down stream readout electronics card (ROC), a series of long and high speed readout cables were developed. This document focuses on the silicon ladder, the readout cables, and the ROC of the INTT. The radiation hardness is studied for some parts of the INTT devices in the last part of this document, since the INTT employed some materials from the technology frontier of the industry whose radiation hardness is not necessarily well known.
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Submitted 12 March, 2025;
originally announced March 2025.
