Showing 1–50 of 71 results for author: Fuhrer, A

Identifying and mitigating errors in hole spin qubit readout

Authors: Eoin Gerard Kelly, Leonardo Massai, Bence Hetényi, Marta Pita-Vidal, Alexei Orekhov, Cornelius Carlsson, Inga Seidler, Konstantinos Tsoukalas, Lisa Sommer, Michele Aldeghi, Stephen W. Bedell, Stephan Paredes, Felix J. Schupp, Matthias Mergenthaler, Andreas Fuhrer, Gian Salis, Patrick Harvey-Collard

Abstract: High-fidelity readout of spin qubits in semiconductor quantum dots can be achieved by combining a radio-frequency (RF) charge sensor together with spin-to-charge conversion and Pauli spin blockade. However, reaching high readout fidelities in hole spin qubits remains elusive and is complicated by a combination of site-dependent spin anisotropies and short spin relaxation times. Here, we analyze th… ▽ More High-fidelity readout of spin qubits in semiconductor quantum dots can be achieved by combining a radio-frequency (RF) charge sensor together with spin-to-charge conversion and Pauli spin blockade. However, reaching high readout fidelities in hole spin qubits remains elusive and is complicated by a combination of site-dependent spin anisotropies and short spin relaxation times. Here, we analyze the different error processes that arise during readout using a double-latched scheme in a germanium double quantum dot hole spin qubit system. We first investigate the spin-to-charge conversion process as a function of magnetic field orientation, and configure the system to adiabatically map the $\lvert \downarrow\downarrow \rangle$ state to the only non-blockaded state. We reveal a strong dependence of the spin relaxation rates on magnetic field strength and minimize this relaxation by operating at low fields. We further characterize and mitigate the error processes that arise during the double-latching process. By combining an RF charge sensor, a double-latching process, and optimized magnetic field parameters, we achieve a single-shot single-qubit state-preparation-and-measurement fidelity of 97.0%, the highest reported fidelity for hole spin qubits. Unlike prior works and vital to usability, we simultaneously maintain universal control of both spins. These findings lay the foundation for the reproducible achievement of high-fidelity readout in hole-based spin quantum processors. △ Less

Submitted 9 April, 2025; originally announced April 2025.

A dressed singlet-triplet qubit in germanium

Authors: Konstantinos Tsoukalas, Uwe von Lüpke, Alexei Orekhov, Bence Hetényi, Inga Seidler, Lisa Sommer, Eoin G. Kelly, Leonardo Massai, Michele Aldeghi, Marta Pita-Vidal, Nico W. Hendrickx, Stephen W. Bedell, Stephan Paredes, Felix J. Schupp, Matthias Mergenthaler, Gian Salis, Andreas Fuhrer, Patrick Harvey-Collard

Abstract: In semiconductor hole spin qubits, low magnetic field ($B$) operation extends the coherence time ($T_\mathrm{2}^*$) but proportionally reduces the gate speed. In contrast, singlet-triplet (ST) qubits are primarily controlled by the exchange interaction ($J$) and can thus maintain high gate speeds even at low $B$. However, a large $J$ introduces a significant charge component to the qubit, renderin… ▽ More In semiconductor hole spin qubits, low magnetic field ($B$) operation extends the coherence time ($T_\mathrm{2}^*$) but proportionally reduces the gate speed. In contrast, singlet-triplet (ST) qubits are primarily controlled by the exchange interaction ($J$) and can thus maintain high gate speeds even at low $B$. However, a large $J$ introduces a significant charge component to the qubit, rendering ST qubits more vulnerable to charge noise when driven. Here, we demonstrate a highly coherent ST hole spin qubit in germanium, operating at both low $B$ and low $J$. By modulating $J$, we achieve resonant driving of the ST qubit, obtaining an average gate fidelity of $99.68\%$ and a coherence time of $T_\mathrm{2}^*=1.9\,μ$s. Moreover, by applying the resonant drive continuously, we realize a dressed ST qubit with a tenfold increase in coherence time ($T_\mathrm{2ρ}^*=20.3\,μ$s). Frequency modulation of the driving signal enables universal control, with an average gate fidelity of $99.64\%$. Our results demonstrate the potential for extending coherence times while preserving high-fidelity control of germanium-based ST qubits, paving the way for more efficient operations in semiconductor-based quantum processors. △ Less

Submitted 24 January, 2025; originally announced January 2025.

Impact of interface traps on charge noise, mobility and percolation density in Ge/SiGe heterostructures

Authors: L. Massai, B. Hetényi, M. Mergenthaler, F. J. Schupp, L. Sommer, S. Paredes, S. W. Bedell, P. Harvey-Collard, G. Salis, A. Fuhrer, N. W. Hendrickx

Abstract: Hole spins in Ge/SiGe heterostructure quantum dots have emerged as promising qubits for quantum computation. The strong spin-orbit coupling (SOC), characteristic of heavy-hole states in Ge, enables fast and all-electrical qubit control. However, SOC also increases the susceptibility of spin qubits to charge noise. While qubit coherence can be significantly improved by operating at sweet spots with… ▽ More Hole spins in Ge/SiGe heterostructure quantum dots have emerged as promising qubits for quantum computation. The strong spin-orbit coupling (SOC), characteristic of heavy-hole states in Ge, enables fast and all-electrical qubit control. However, SOC also increases the susceptibility of spin qubits to charge noise. While qubit coherence can be significantly improved by operating at sweet spots with reduced hyperfine or charge noise sensitivity, the latter ultimately limits coherence, underlining the importance of understanding and reducing charge noise at its source. In this work, we study the voltage-induced hysteresis commonly observed in SiGe-based quantum devices and show that the dominant charge fluctuators are localized at the semiconductor-oxide interface. By applying increasingly negative gate voltages to Hall bar and quantum dot devices, we investigate how the hysteretic filling of interface traps impacts transport metrics and charge noise. We find that the gate-induced accumulation and trapping of charge at the SiGe-oxide interface leads to an increased electrostatic disorder, as probed by transport measurements, as well as the activation of low-frequency relaxation dynamics, resulting in slow drifts and increased charge noise levels. Our results highlight the importance of a conservative device tuning strategy and reveal the critical role of the semiconductor-oxide interface in SiGe heterostructures for spin qubit applications. △ Less

Submitted 9 October, 2023; originally announced October 2023.

Capacitive crosstalk in gate-based dispersive sensing of spin qubits

Authors: Eoin G. Kelly, Alexei Orekhov, Nico Hendrickx, Matthias Mergenthaler, Felix Schupp, Stephan Paredes, Rafael S. Eggli, Andreas V. Kuhlmann, Patrick Harvey-Collard, Andreas Fuhrer, Gian Salis

Abstract: In gate-based dispersive sensing, the response of a resonator attached to a quantum dot gate is detected by a reflected radio-frequency signal. This enables fast readout of spin qubits and tune up of arrays of quantum dots, but comes at the expense of increased susceptibility to crosstalk, as the resonator can amplify spurious signals and induce fluctuations in the quantum dot potential. We attach… ▽ More In gate-based dispersive sensing, the response of a resonator attached to a quantum dot gate is detected by a reflected radio-frequency signal. This enables fast readout of spin qubits and tune up of arrays of quantum dots, but comes at the expense of increased susceptibility to crosstalk, as the resonator can amplify spurious signals and induce fluctuations in the quantum dot potential. We attach tank circuits with superconducting NbN inductors and internal quality factors $Q_{\mathrm{i}}$>1000 to the interdot barrier gate of silicon double quantum dot devices. Measuring the interdot transition in transport, we quantify radio-frequency crosstalk that results in a ring-up of the resonator when neighbouring plunger gates are driven with frequency components matching the resonator frequency. This effect complicates qubit operation and scales with the loaded quality factor of the resonator, the mutual capacitance between device gate electrodes, and with the inverse of the parasitic capacitance to ground. Setting qubit frequencies below the resonator frequency is expected to substantially suppress this type of crosstalk. △ Less

Submitted 19 September, 2023; originally announced September 2023.

Comments: 7 pages, 4 figures, supplementary information

A Generalizable TCAD Framework for Silicon FinFET Spin Qubit Devices with Electrical Control

Authors: Qian Ding, Andreas V. Kuhlmann, Andreas Fuhrer, Andreas Schenk

Abstract: We present a TCAD-based simulation framework established for quantum dot spin qubits in a silicon FinFET platform with all-electrical control of the spin state. The framework works down to 1K and consists of a two-step simulation chain, from definition of the quantum dot confinement potential with DC bias voltages, to calculation of microwave response electric field at qubit locations using small-… ▽ More We present a TCAD-based simulation framework established for quantum dot spin qubits in a silicon FinFET platform with all-electrical control of the spin state. The framework works down to 1K and consists of a two-step simulation chain, from definition of the quantum dot confinement potential with DC bias voltages, to calculation of microwave response electric field at qubit locations using small-signal AC analysis. An average field polarization vector at each quantum dot is extracted via a post-processing step. We demonstrate functionality of this approach by simulation of a recently reported two-qubit device in the form of a 5-gate silicon FinFET. The impact of the number of holes in each quantum dot on the MW response E-field polarization direction is further investigated for this device. The framework is easily generalizable to study future multi-qubit large-scale systems. △ Less

Submitted 5 June, 2023; originally announced June 2023.

Comments: 4 pages, 6 figures, submitted to conference SISPAD 2022

Journal ref: Solid-State Electronics 200 (2023) 108550

Sweet-spot operation of a germanium hole spin qubit with highly anisotropic noise sensitivity

Authors: N. W. Hendrickx, L. Massai, M. Mergenthaler, F. Schupp, S. Paredes, S. W. Bedell, G. Salis, A. Fuhrer

Abstract: Spin qubits defined by valence band hole states comprise an attractive candidate for quantum information processing due to their inherent coupling to electric fields enabling fast and scalable qubit control. In particular, heavy holes in germanium have shown great promise, with recent demonstrations of fast and high-fidelity qubit operations. However, the mechanisms and anisotropies that underlie… ▽ More Spin qubits defined by valence band hole states comprise an attractive candidate for quantum information processing due to their inherent coupling to electric fields enabling fast and scalable qubit control. In particular, heavy holes in germanium have shown great promise, with recent demonstrations of fast and high-fidelity qubit operations. However, the mechanisms and anisotropies that underlie qubit driving and decoherence are still mostly unclear. Here, we report on the highly anisotropic heavy-hole $g$-tensor and its dependence on electric fields, allowing us to relate both qubit driving and decoherence to an electric modulation of the $g$-tensor. We also confirm the predicted Ising-type hyperfine interaction but show that qubit coherence is ultimately limited by $1/f$ charge noise. Finally, we operate the qubit at low magnetic field and measure a dephasing time of $T_2^*=9.2$ $μ$s, while maintaining a single-qubit gate fidelity of 99.94 %, that remains well above 99 % at an operation temperature T>1 K. This understanding of qubit driving and decoherence mechanisms are key for the design and operation of scalable and highly coherent hole qubit arrays. △ Less

Submitted 24 November, 2023; v1 submitted 22 May, 2023; originally announced May 2023.

Comments: Main text: 12 pages, 6 figures, 50+9 references. Supplementary information is included at the end: 9 pages, 11 figures

Journal ref: Nature Materials (2024)

Readout of quantum devices with a sideband microwave interferometer immune to systematic noise

Authors: N. Crescini, E. G. Kelly, G. Salis, A. Fuhrer

Abstract: The accuracy of microwave measurements is not only critical for applications in telecommunication and radar, but also for future quantum computers. Qubit technologies such as superconducting qubits or spin qubits require detecting minuscule signals, typically achieved by reflecting a microwave tone off a resonator that is coupled to the qubit. Noise from cabling and amplification, e.g. from temper… ▽ More The accuracy of microwave measurements is not only critical for applications in telecommunication and radar, but also for future quantum computers. Qubit technologies such as superconducting qubits or spin qubits require detecting minuscule signals, typically achieved by reflecting a microwave tone off a resonator that is coupled to the qubit. Noise from cabling and amplification, e.g. from temperature variations, can be detrimental to readout fidelity. We present an approach to detect phase and amplitude changes of a device under test based on the differential measurement of microwave tones generated by two first-order sidebands of a carrier signal. The two microwave tones are sent through the same cable to the measured device that exhibits a narrow-band response for one sideband and leaves the other unaffected. The reflected sidebands are interfered by down-conversion with the carrier. By choosing amplitude and phases of the sidebands, suppression of either common amplitude or common phase noise can be achieved, allowing for fast, stable measurements of frequency shifts and quality factors of resonators. Test measurements were performed on NbN superconducting resonators at 25 mK to calibrate and characterise the experimental setup, and to study time-dependent fluctuations of their resonance frequency. △ Less

Submitted 13 March, 2023; originally announced March 2023.

Phase driving hole spin qubits

Authors: Stefano Bosco, Simon Geyer, Leon C. Camenzind, Rafael S. Eggli, Andreas Fuhrer, Richard J. Warburton, Dominik M. Zumbühl, J. Carlos Egues, Andreas V. Kuhlmann, Daniel Loss

Abstract: The spin-orbit interaction in spin qubits enables spin-flip transitions, resulting in Rabi oscillations when an external microwave field is resonant with the qubit frequency. Here, we introduce an alternative driving mechanism of hole spin qubits, where a far-detuned oscillating field couples to the qubit phase. Phase driving at radio frequencies, orders of magnitude slower than the microwave qubi… ▽ More The spin-orbit interaction in spin qubits enables spin-flip transitions, resulting in Rabi oscillations when an external microwave field is resonant with the qubit frequency. Here, we introduce an alternative driving mechanism of hole spin qubits, where a far-detuned oscillating field couples to the qubit phase. Phase driving at radio frequencies, orders of magnitude slower than the microwave qubit frequency, induces highly non-trivial spin dynamics, violating the Rabi resonance condition. By using a qubit integrated in a silicon fin field-effect transistor (Si FinFET), we demonstrate a controllable suppression of resonant Rabi oscillations, and their revivals at tunable sidebands. These sidebands enable alternative qubit control schemes using global fields and local far-detuned pulses, facilitating the design of dense large-scale qubit architectures with local qubit addressability. Phase driving also decouples Rabi oscillations from noise, an effect due to a gapped Floquet spectrum and can enable Floquet engineering high-fidelity gates in future quantum processors. △ Less

Submitted 6 March, 2023; originally announced March 2023.

Holomorphic motions, dimension, area and quasiconformal mappings

Authors: Aidan Fuhrer, Thomas Ransford, Malik Younsi

Abstract: We describe the variation of the Minkowski, packing and Hausdorff dimensions of a set moving under a holomorphic motion, as well as the variation of its area. Our method provides a new, unified approach to various celebrated theorems about quasiconformal mappings, including the work of Astala on the distortion of area and dimension under quasiconformal mappings and the work of Smirnov on the dimen… ▽ More We describe the variation of the Minkowski, packing and Hausdorff dimensions of a set moving under a holomorphic motion, as well as the variation of its area. Our method provides a new, unified approach to various celebrated theorems about quasiconformal mappings, including the work of Astala on the distortion of area and dimension under quasiconformal mappings and the work of Smirnov on the dimension of quasicircles. △ Less

Submitted 6 April, 2023; v1 submitted 15 February, 2023; originally announced February 2023.

Comments: 33 pages

MSC Class: 37F44 (Primary); 30C62; 31A05; 28A78 (Secondary)

Two-qubit logic with anisotropic exchange in a fin field-effect transistor

Authors: Simon Geyer, Bence Hetényi, Stefano Bosco, Leon C. Camenzind, Rafael S. Eggli, Andreas Fuhrer, Daniel Loss, Richard J. Warburton, Dominik M. Zumbühl, Andreas V. Kuhlmann

Abstract: Semiconductor spin qubits offer a unique opportunity for scalable quantum computation by leveraging classical transistor technology. Hole spin qubits benefit from fast all-electrical qubit control and sweet spots to counteract charge and nuclear spin noise. The demonstration of a two-qubit quantum gate in a silicon fin field-effect transistor, that is, the workhorse device of today's semiconductor… ▽ More Semiconductor spin qubits offer a unique opportunity for scalable quantum computation by leveraging classical transistor technology. Hole spin qubits benefit from fast all-electrical qubit control and sweet spots to counteract charge and nuclear spin noise. The demonstration of a two-qubit quantum gate in a silicon fin field-effect transistor, that is, the workhorse device of today's semiconductor industry, has remained an open challenge. Here, we demonstrate a controlled rotation two-qubit gate on hole spins in an industry-compatible device. A short gate time of 24 ns is achieved. The quantum logic exploits an exchange interaction that can be tuned from above 500 MHz to close-to-off. Significantly, the exchange is strikingly anisotropic. By developing a general theory, we show that the anisotropy arises as a consequence of a strong spin-orbit interaction. Upon tunnelling from one quantum dot to the other, the spin is rotated by almost 90 degrees. The exchange Hamiltonian no longer has Heisenberg form and is engineered in such a way that there is no trade-off between speed and fidelity of the two-qubit gate. This ideal behaviour applies over a wide range of magnetic field orientations rendering the concept robust with respect to variations from qubit to qubit. Our work brings hole spin qubits in silicon transistors a step closer to the realization of a large-scale quantum computer. △ Less

Submitted 5 December, 2022; originally announced December 2022.

Large even-odd spacing and $g$-factor anisotropy in PbTe quantum dots

Authors: S. C. ten Kate, M. F. Ritter, A. Fuhrer, J. Jung, S. G. Schellingerhout, E. P. A. M. Bakkers, H. Riel, F. Nichele

Abstract: PbTe is a semiconductor with promising properties for topological quantum computing applications. Here we characterize quantum dots in PbTe nanowires selectively grown on InP. Charge stability diagrams at zero magnetic field reveal large even-odd spacing between Coulomb blockade peaks, charging energies below 140$~\mathrm{μeV}$ and Kondo peaks in odd Coulomb diamonds. We attribute the large even-o… ▽ More PbTe is a semiconductor with promising properties for topological quantum computing applications. Here we characterize quantum dots in PbTe nanowires selectively grown on InP. Charge stability diagrams at zero magnetic field reveal large even-odd spacing between Coulomb blockade peaks, charging energies below 140$~\mathrm{μeV}$ and Kondo peaks in odd Coulomb diamonds. We attribute the large even-odd spacing to the large dielectric constant and small effective electron mass of PbTe. By studying the Zeeman-induced level and Kondo splitting in finite magnetic fields, we extract the electron $g$-factor as a function of magnetic field direction. We find the $g$-factor tensor to be highly anisotropic, with principal $g$-factors ranging from 0.9 to 22.4, and to depend on the electronic configuration of the devices. These results indicate strong Rashba spin-orbit interaction in our PbTe quantum dots. △ Less

Submitted 13 May, 2022; originally announced May 2022.

Report number: Nano Lett. 2022, 22, 17, 7049--7056

On the Role of Out-of-Equilibrium Phonons in Gated Superconducting Switches

Authors: M. F. Ritter, N. Crescini, D. Z. Haxell, M. Hinderling, H. Riel, C. Bruder, A. Fuhrer, F. Nichele

Abstract: Recent experiments suggest the possibility to tune superconductivity in metallic nanowires by application of modest gate voltages. It is largely debated whether the effect is due to an electric field at the superconductor surface or small currents of high-energy electrons. We shed light on this matter by studying the suppression of superconductivity in sample geometries where the roles of electric… ▽ More Recent experiments suggest the possibility to tune superconductivity in metallic nanowires by application of modest gate voltages. It is largely debated whether the effect is due to an electric field at the superconductor surface or small currents of high-energy electrons. We shed light on this matter by studying the suppression of superconductivity in sample geometries where the roles of electric field and electron-current flow can be clearly separated. Our results show that suppression of superconductivity does not depend on the presence or absence of an electric field at the surface of the nanowire, but requires a current of high-energy electrons. The suppression is most efficient when electrons are injected into the nanowire, but similar results are obtained also when electrons are passed between two remote electrodes at a distance $d$ to the nanowire (with $d$ in excess of $1~\mathrm{μm}$). In the latter case, high-energy electrons decay into phonons which propagate through the substrate and affect superconductivity in the nanowire by generating quasiparticles. We show that this process involves a non-thermal phonon distribution, with marked differences from the loss of superconductivity due to Joule heating near the nanowire or an increase in the bath temperature. △ Less

Submitted 3 June, 2021; originally announced June 2021.

Journal ref: Nature Electronics 5, 71-77 (2022)

Effects of surface treatments on flux tunable transmon qubits

Authors: M. Mergenthaler, C. Müller, M. Ganzhorn, S. Paredes, P. Müller, G. Salis, V. P. Adiga, M. Brink, M. Sandberg, J. B. Hertzberg, S. Filipp, A. Fuhrer

Abstract: One of the main limitations in state-of-the art solid-state quantum processors are qubit decoherence and relaxation due to noise in their local environment. For the field to advance towards full fault-tolerant quantum computing, a better understanding of the underlying microscopic noise sources is therefore needed. Adsorbates on surfaces, impurities at interfaces and material defects have been ide… ▽ More One of the main limitations in state-of-the art solid-state quantum processors are qubit decoherence and relaxation due to noise in their local environment. For the field to advance towards full fault-tolerant quantum computing, a better understanding of the underlying microscopic noise sources is therefore needed. Adsorbates on surfaces, impurities at interfaces and material defects have been identified as sources of noise and dissipation in solid-state quantum devices. Here, we use an ultra-high vacuum package to study the impact of vacuum loading, UV-light exposure and ion irradiation treatments on coherence and slow parameter fluctuations of flux tunable superconducting transmon qubits. We analyse the effects of each of these surface treatments by comparing averages over many individual qubits and measurements before and after treatment. The treatments studied do not significantly impact the relaxation rate $Γ_1$ and the echo dephasing rate $Γ_2^\textrm{e}$, except for Ne ion bombardment which reduces $Γ_1$. In contrast, flux noise parameters are improved by removing magnetic adsorbates from the chip surfaces with UV-light and NH$_3$ treatments. Additionally, we demonstrate that SF$_6$ ion bombardment can be used to adjust qubit frequencies in-situ and post fabrication without affecting qubit coherence at the sweet spot. △ Less

Submitted 14 March, 2021; originally announced March 2021.

Journal ref: npj Quantum Information 7, 157 (2021)

A hole spin qubit in a fin field-effect transistor above 4 kelvin

Authors: Leon C. Camenzind, Simon Geyer, Andreas Fuhrer, Richard J. Warburton, Dominik M. Zumbühl, Andreas V. Kuhlmann

Abstract: The greatest challenge in quantum computing is achieving scalability. Classical computing previously faced a scalability issue, solved with silicon chips hosting billions of fin field-effect transistors (FinFETs). These FinFET devices are small enough for quantum applications: at low temperatures, an electron or hole trapped under the gate serves as a spin qubit. Such an approach potentially allow… ▽ More The greatest challenge in quantum computing is achieving scalability. Classical computing previously faced a scalability issue, solved with silicon chips hosting billions of fin field-effect transistors (FinFETs). These FinFET devices are small enough for quantum applications: at low temperatures, an electron or hole trapped under the gate serves as a spin qubit. Such an approach potentially allows the quantum hardware and its classical control electronics to be integrated on the same chip. However, this requires qubit operation at temperatures above 1K, where the cooling overcomes heat dissipation. Here, we show that silicon FinFETs can host spin qubits operating above 4K. We achieve fast electrical control of hole spins with driving frequencies up to 150MHz, single-qubit gate fidelities at the fault-tolerance threshold, and a Rabi oscillation quality factor greater than 87. Our devices feature both industry compatibility and quality, and are fabricated in a flexible and agile way that should accelerate further development. △ Less

Submitted 6 February, 2023; v1 submitted 12 March, 2021; originally announced March 2021.

Ultrahigh Vacuum Packaging and Surface Cleaning for Quantum Devices

Authors: M. Mergenthaler, S. Paredes, P. Müller, C. Müller, S. Filipp, M. Sandberg, J. Hertzberg, V. P. Adiga, M. Brink, A. Fuhrer

Abstract: We describe design, implementation and performance of an ultra-high vacuum (UHV) package for superconducting qubit chips or other surface sensitive quantum devices. The UHV loading procedure allows for annealing, ultra-violet light irradiation, ion milling and surface passivation of quantum devices before sealing them into a measurement package. The package retains vacuum during the transfer to cr… ▽ More We describe design, implementation and performance of an ultra-high vacuum (UHV) package for superconducting qubit chips or other surface sensitive quantum devices. The UHV loading procedure allows for annealing, ultra-violet light irradiation, ion milling and surface passivation of quantum devices before sealing them into a measurement package. The package retains vacuum during the transfer to cryogenic temperatures by active pumping with a titanium getter layer. We characterize the treatment capabilities of the system and present measurements of flux tunable qubits with an average T$_1=84~μ$s and T$^{echo}_2=134~μ$s after vacuum-loading these samples into a bottom loading dilution refrigerator in the UHV-package. △ Less

Submitted 22 October, 2020; originally announced October 2020.

Comments: 5 pages, 6 figures

Journal ref: Review of Scientific Instruments 92, 025121 (2021)

Silicon quantum dot devices with a self-aligned second gate layer

Authors: Simon Geyer, Leon C. Camenzind, Lukas Czornomaz, Veeresh Deshpande, Andreas Fuhrer, Richard J. Warburton, Dominik M. Zumbühl, Andreas V. Kuhlmann

Abstract: We implement silicon quantum dot devices with two layers of gate electrodes using a self-alignment technique, which allows for ultra-small gate lengths and intrinsically perfect layer-to-layer alignment. In a double quantum dot system, we investigate hole transport and observe current rectification due to Pauli spin blockade. Magnetic field measurements indicate that hole spin relaxation is domina… ▽ More We implement silicon quantum dot devices with two layers of gate electrodes using a self-alignment technique, which allows for ultra-small gate lengths and intrinsically perfect layer-to-layer alignment. In a double quantum dot system, we investigate hole transport and observe current rectification due to Pauli spin blockade. Magnetic field measurements indicate that hole spin relaxation is dominated by spin-orbit interaction, and enable us to determine the effective hole $g$-factor $\simeq1.6$. From an avoided singlet-triplet crossing, occurring at high magnetic field, the spin-orbit coupling strength $\simeq0.27$meV is obtained, promising fast and all-electrical spin control. △ Less

Submitted 30 July, 2020; originally announced July 2020.

Benchmarking the noise sensitivity of different parametric two-qubit gates in a single superconducting quantum computing platform

Authors: M. Ganzhorn, G. Salis, D. J. Egger, A. Fuhrer, M. Mergenthaler, C. Müller, P. Müller, S. Paredes, M. Pechal, M. Werninghaus, S. Filipp

Abstract: The possibility to utilize different types of two-qubit gates on a single quantum computing platform adds flexibility in the decomposition of quantum algorithms. A larger hardware-native gate set may decrease the number of required gates, provided that all gates are realized with high fidelity. Here, we benchmark both controlled-Z (CZ) and exchange-type (iSWAP) gates using a parametrically driven… ▽ More The possibility to utilize different types of two-qubit gates on a single quantum computing platform adds flexibility in the decomposition of quantum algorithms. A larger hardware-native gate set may decrease the number of required gates, provided that all gates are realized with high fidelity. Here, we benchmark both controlled-Z (CZ) and exchange-type (iSWAP) gates using a parametrically driven tunable coupler that mediates the interaction between two superconducting qubits. Using randomized benchmarking protocols we estimate an error per gate of $0.9\pm0.03\%$ and $1.3\pm0.4\%$ fidelity for the CZ and the iSWAP gate, respectively. We argue that spurious $ZZ$-type couplings are the dominant error source for the iSWAP gate, and that phase stability of all microwave drives is of utmost importance. Such differences in the achievable fidelities for different two-qubit gates have to be taken into account when mapping quantum algorithms to real hardware. △ Less

Submitted 14 May, 2020; v1 submitted 12 May, 2020; originally announced May 2020.

Comments: 24 pages, including supplementary information

Journal ref: Phys. Rev. Research 2, 033447 (2020)

A superconducting switch actuated by injection of high energy electrons

Authors: M. F. Ritter, A. Fuhrer, D. Z. Haxell, S. Hart, P. Gumann, H. Riel, F. Nichele

Abstract: Fast cryogenic switches with ultra-low power dissipation are highly sought-after for control electronics of quantum computers, space applications and next generation logic circuits. However, existing high-frequency switches are often bulky, lossy or require large source-drain and gate currents for operation, making them unsuitable for many applications and difficult to interface to semiconducting… ▽ More Fast cryogenic switches with ultra-low power dissipation are highly sought-after for control electronics of quantum computers, space applications and next generation logic circuits. However, existing high-frequency switches are often bulky, lossy or require large source-drain and gate currents for operation, making them unsuitable for many applications and difficult to interface to semiconducting devices. Here we present an electrically controlled superconducting switch based on a metallic nanowire. Transition from superconducting to resistive state is realized by tunneling of high-energy electrons from a gate contact through an insulating barrier. Operating gate currents are several orders of magnitude smaller than the nanowire critical source-drain current, effectively resulting in a voltage-controlled device. This superconducting switch is fast, self-resets from normal to superconducting state, and can operate in large magnetic fields, making it an ideal component for low-power cryogenic applications and quantum computing architectures. △ Less

Submitted 1 May, 2020; originally announced May 2020.

Journal ref: Nat. Commun. 12, 1266 (2021)

P-type $δ$-doping with Diborane on Si(001) for STM Based Dopant Device Fabrication

Authors: Tomáš Škereň, Sigrun Köster, Bastien Douhard, Claudia Fleischmann, Andreas Fuhrer

Abstract: Hydrogen resist lithography using the tip of a scanning tunneling microscope (STM) is employed for patterning p-type nanostructures in silicon. For this, the carrier density and mobility of boron $δ$-layers, fabricated by gas-phase doping, are characterized with low-temperature transport experiments. Sheet resistivities as low as $300\thinspaceΩ$ are found. Adsorption, incorporation and surface di… ▽ More Hydrogen resist lithography using the tip of a scanning tunneling microscope (STM) is employed for patterning p-type nanostructures in silicon. For this, the carrier density and mobility of boron $δ$-layers, fabricated by gas-phase doping, are characterized with low-temperature transport experiments. Sheet resistivities as low as $300\thinspaceΩ$ are found. Adsorption, incorporation and surface diffusion of the dopants are investigated by STM imaging and result in an upper bound of 2\,nm for the lithographic resolution which is also corroborated by fabricating a 7.5\,nm wide p-type nanowire and measuring its electrical properties. Finally, to demonstrate the feasibility of bipolar dopant device fabrication with this technique, we prepared a 100\,nm wide pn junction and show that its electrical behavior is similar to that of an Esaki diode. △ Less

Submitted 12 December, 2019; originally announced December 2019.

Comments: 19 pages, 5 figures

Journal ref: Nature Electronics (2020)

CMOS Platform for Atomic-Scale Device Fabrication

Authors: Tomas Skeren, Nikola Pascher, Arnaud Garnier, Patrick Reynaud, Emmanuel Rolland, Aurelie Thuaire, Daniel Widmer, Xavier Jehl, Andreas Fuhrer

Abstract: Controlled atomic scale fabrication of functional devices is one of the holy grails of nanotechnology. The most promising class of techniques that enable deterministic nanodevice fabrication are based on scanning probe patterning or surface assembly. However, this typically involves a complex process flow, stringent requirements for an ultra high vacuum environment, long fabrication times and, con… ▽ More Controlled atomic scale fabrication of functional devices is one of the holy grails of nanotechnology. The most promising class of techniques that enable deterministic nanodevice fabrication are based on scanning probe patterning or surface assembly. However, this typically involves a complex process flow, stringent requirements for an ultra high vacuum environment, long fabrication times and, consequently, limited throughput and device yield. Here, a device platform is developed that overcomes these limitations by integrating scanning probe based dopant device fabrication with a CMOS-compatible process flow. Silicon on insulator substrates are used featuring a reconstructed Si(001):H surface that is protected by a capping chip and has pre-implanted contacts ready for scanning tunneling microscope (STM) patterning. Processing in ultra-high vacuum is thus reduced to only a few critical steps which minimizes the complexity, time and effort required for fabrication of the nanoscale dopant devices. Subsequent reintegration of the samples into the CMOS process flow not only simplifies the post-processing but also opens the door to successful application of STM based dopant devices as a building block in more complex device architectures. Full functionality of this approach is demonstrated with magnetotransport measurements on degenerately doped STM patterned Si:P nanowires up to room temperature. △ Less

Submitted 1 October, 2019; originally announced October 2019.

Comments: 14 pages plus supplement

Journal ref: Nanotechnology, 29, 435302 (2018)

Gate-efficient simulation of molecular eigenstates on a quantum computer

Authors: Marc Ganzhorn, Daniel J. Egger, Panagiotis Kl. Barkoutsos, Pauline Ollitrault, Gian Salis, Nikolaj Moll, Andreas Fuhrer, Peter Mueller, Stefan Woerner, Ivano Tavernelli, Stefan Filipp

Abstract: A key requirement to perform simulations of large quantum systems on near-term quantum hardware is the design of quantum algorithms with short circuit depth that finish within the available coherence time. A way to stay within the limits of coherence is to reduce the number of gates by implementing a gate set that matches the requirements of the specific algorithm of interest directly in hardware.… ▽ More A key requirement to perform simulations of large quantum systems on near-term quantum hardware is the design of quantum algorithms with short circuit depth that finish within the available coherence time. A way to stay within the limits of coherence is to reduce the number of gates by implementing a gate set that matches the requirements of the specific algorithm of interest directly in hardware. Here, we show that exchange-type gates are a promising choice for simulating molecular eigenstates on near-term quantum devices since these gates preserve the number of excitations in the system. Complementing the theoretical work by Barkoutsos et al. [PRA 98, 022322 (2018)], we report on the experimental implementation of a variational algorithm on a superconducting qubit platform to compute the eigenstate energies of molecular hydrogen. We utilize a parametrically driven tunable coupler to realize exchange-type gates that are configurable in amplitude and phase on two fixed-frequency superconducting qubits. With gate fidelities around 95% we are able to compute the eigenstates within an accuracy of 50 mHartree on average, a limit set by the coherence time of the tunable coupler. △ Less

Submitted 13 September, 2018; originally announced September 2018.

Journal ref: Phys. Rev. Applied 11, 044092 (2019)

Ambipolar quantum dots in undoped silicon fin field-effect transistors

Authors: Andreas V. Kuhlmann, Veeresh Deshpande, Leon C. Camenzind, Dominik M. Zumbühl, Andreas Fuhrer

Abstract: We integrate ambipolar quantum dots in silicon fin field-effect transistors using exclusively standard complementary metal-oxide-semiconductor fabrication techniques. We realize ambipolarity by replacing conventional highly-doped source and drain electrodes by a metallic nickel silicide with Fermi level close to the silicon mid-gap position. Such devices operate in a dual mode, either as classical… ▽ More We integrate ambipolar quantum dots in silicon fin field-effect transistors using exclusively standard complementary metal-oxide-semiconductor fabrication techniques. We realize ambipolarity by replacing conventional highly-doped source and drain electrodes by a metallic nickel silicide with Fermi level close to the silicon mid-gap position. Such devices operate in a dual mode, either as classical field-effect or single-electron transistor. We implement a classical logic NOT gate at low temperature by tuning two interconnected transistors into opposite polarities. In the quantum regime, we demonstrate stable quantum dot operation in the few charge carrier Coulomb blockade regime for both electrons and holes. △ Less

Submitted 11 July, 2018; originally announced July 2018.

Journal ref: Appl. Phys. Lett. 113, 122107 (2018)

Quantum algorithms for electronic structure calculations: particle/hole Hamiltonian and optimized wavefunction expansions

Authors: Panagiotis Kl. Barkoutsos, Jerome F. Gonthier, Igor Sokolov, Nikolaj Moll, Gian Salis, Andreas Fuhrer, Marc Ganzhorn, Daniel J. Egger, Matthias Troyer, Antonio Mezzacapo, Stefan Filipp, Ivano Tavernelli

Abstract: In this work we investigate methods to improve the efficiency and scalability of quantum algorithms for quantum chemistry applications. We propose a transformation of the electronic structure Hamiltonian in the second quantization framework into the particle-hole (p/h) picture, which offers a better starting point for the expansion of the trial wavefunction. The state of the molecular system at st… ▽ More In this work we investigate methods to improve the efficiency and scalability of quantum algorithms for quantum chemistry applications. We propose a transformation of the electronic structure Hamiltonian in the second quantization framework into the particle-hole (p/h) picture, which offers a better starting point for the expansion of the trial wavefunction. The state of the molecular system at study is parametrized in a way to efficiently explore the sector of the molecular Fock space that contains the desired solution. To this end, we explore several trial wavefunctions to identify the most efficient parameterization of the molecular ground state. Taking advantage of known post-Hartree Fock quantum chemistry approaches and heuristic Hilbert space search quantum algorithms, we propose a new family of quantum circuits based on exchange-type gates that enable accurate calculations while keeping the gate count (i.e., the circuit depth) low. The particle-hole implementation of the Unitary Coupled Cluster (UCC) method within the Variational Quantum Eigensolver approach gives rise to an efficient quantum algorithm, named q-UCC , with important advantages compared to the straightforward 'translation' of the classical Coupled Cluster counterpart. In particular, we show how a single Trotter step can accurately and efficiently reproduce the ground state energies of simple molecular systems. △ Less

Submitted 11 May, 2018; originally announced May 2018.

Journal ref: Phys. Rev. A 98, 022322 (2018)

Entanglement generation in superconducting qubits using holonomic operations

Authors: Daniel J. Egger, Marc Ganzhorn, Gian Salis, Andreas Fuhrer, Peter Mueller, Panagiotis Kl. Barkoutsos, Nikolaj Moll, Ivano Tavernelli, Stefan Filipp

Abstract: We investigate a non-adiabatic holonomic operation that enables us to entangle two fixed-frequency superconducting transmon qubits attached to a common bus resonator. Two coherent microwave tones are applied simultaneously to the two qubits and drive transitions between the first excited resonator state and the second excited state of each qubit. The cyclic evolution within this effective 3-level… ▽ More We investigate a non-adiabatic holonomic operation that enables us to entangle two fixed-frequency superconducting transmon qubits attached to a common bus resonator. Two coherent microwave tones are applied simultaneously to the two qubits and drive transitions between the first excited resonator state and the second excited state of each qubit. The cyclic evolution within this effective 3-level $Λ$-system gives rise to a holonomic operation entangling the two qubits. Two-qubit states with 95\% fidelity, limited mainly by charge-noise of the current device, are created within $213~\rm{ns}$. This scheme is a step toward implementing a SWAP-type gate directly in an all-microwave controlled hardware platform. By extending the available set of two-qubit operations in the fixed-frequency qubit architecture, the proposed scheme may find applications in near-term quantum applications using variational algorithms to efficiently create problem-specific trial states. △ Less

Submitted 13 April, 2018; originally announced April 2018.

Journal ref: Phys. Rev. Applied 11, 014017 (2019)

Pulsed reset protocol for fixed-frequency superconducting qubits

Authors: Daniel J. Egger, Max Werninghaus, Marc Ganzhorn, Gian Salis, Andreas Fuhrer, Peter Mueller, Stefan Filipp

Abstract: Improving coherence times of quantum bits is a fundamental challenge in the field of quantum computing. With long-lived qubits it becomes, however, inefficient to wait until the qubits have relaxed to their ground state after completion of an experiment. Moreover, for error-correction schemes it is import to rapidly re-initialize ancilla parity-check qubits. We present a simple pulsed qubit reset… ▽ More Improving coherence times of quantum bits is a fundamental challenge in the field of quantum computing. With long-lived qubits it becomes, however, inefficient to wait until the qubits have relaxed to their ground state after completion of an experiment. Moreover, for error-correction schemes it is import to rapidly re-initialize ancilla parity-check qubits. We present a simple pulsed qubit reset protocol based on a two-pulse sequence. A first pulse transfers the excited state population to a higher excited qubit state and a second pulse into a lossy environment provided by a low-Q transmission line resonator, which is also used for qubit readout. We show that the remaining excited state population can be suppressed to $2.2\pm0.8\%$ and utilize the pulsed reset protocol to carry out experiments at enhanced rates. △ Less

Submitted 1 April, 2019; v1 submitted 25 February, 2018; originally announced February 2018.

Journal ref: Phys. Rev. Applied 10, 044030 (2018)

Quantum optimization using variational algorithms on near-term quantum devices

Authors: Nikolaj Moll, Panagiotis Barkoutsos, Lev S. Bishop, Jerry M. Chow, Andrew Cross, Daniel J. Egger, Stefan Filipp, Andreas Fuhrer, Jay M. Gambetta, Marc Ganzhorn, Abhinav Kandala, Antonio Mezzacapo, Peter Müller, Walter Riess, Gian Salis, John Smolin, Ivano Tavernelli, Kristan Temme

Abstract: Universal fault-tolerant quantum computers will require error-free execution of long sequences of quantum gate operations, which is expected to involve millions of physical qubits. Before the full power of such machines will be available, near-term quantum devices will provide several hundred qubits and limited error correction. Still, there is a realistic prospect to run useful algorithms within… ▽ More Universal fault-tolerant quantum computers will require error-free execution of long sequences of quantum gate operations, which is expected to involve millions of physical qubits. Before the full power of such machines will be available, near-term quantum devices will provide several hundred qubits and limited error correction. Still, there is a realistic prospect to run useful algorithms within the limited circuit depth of such devices. Particularly promising are optimization algorithms that follow a hybrid approach: the aim is to steer a highly entangled state on a quantum system to a target state that minimizes a cost function via variation of some gate parameters. This variational approach can be used both for classical optimization problems as well as for problems in quantum chemistry. The challenge is to converge to the target state given the limited coherence time and connectivity of the qubits. In this context, the quantum volume as a metric to compare the power of near-term quantum devices is discussed. With focus on chemistry applications, a general description of variational algorithms is provided and the mapping from fermions to qubits is explained. Coupled-cluster and heuristic trial wave-functions are considered for efficiently finding molecular ground states. Furthermore, simple error-mitigation schemes are introduced that could improve the accuracy of determining ground-state energies. Advancing these techniques may lead to near-term demonstrations of useful quantum computation with systems containing several hundred qubits. △ Less

Submitted 9 October, 2017; v1 submitted 3 October, 2017; originally announced October 2017.

Comments: Contribution to the special issue of Quantum Science & Technology on "What would you do with 1000 qubits"

Journal ref: Quantum Science and Technology, Volume 3, Number 3 2018

Fermionic Hamiltonians for quantum simulations: a general reduction scheme

Authors: Panagiotis Kl. Barkoutsos, Nikolaj Moll, Peter W. J. Staar, Peter Mueller, Andreas Fuhrer, Stefan Filipp, Matthias Troyer, Ivano Tavernelli

Abstract: Many-body fermionic quantum calculations performed on analog quantum computers are restricted by the presence of k-local terms, which represent interactions among more than two qubits. These originate from the fermion-to-qubit mapping applied to the electronic Hamiltonians. Current solutions to this problem rely on perturbation theory in an enlarged Hilbert space. The main challenge associated wit… ▽ More Many-body fermionic quantum calculations performed on analog quantum computers are restricted by the presence of k-local terms, which represent interactions among more than two qubits. These originate from the fermion-to-qubit mapping applied to the electronic Hamiltonians. Current solutions to this problem rely on perturbation theory in an enlarged Hilbert space. The main challenge associated with this technique is that it relies on coupling constants with very different magnitudes. This prevents its implementation in currently available architectures. In order to resolve this issue, we present an optimization scheme that unfolds the k-local terms into a linear combination of 2-local terms, while ensuring the conservation of all relevant physical properties of the original Hamiltonian, with several orders of magnitude smaller variation of the coupling constants. △ Less

Submitted 14 June, 2017; v1 submitted 12 June, 2017; originally announced June 2017.

Superconducting grid-bus surface code architecture for hole-spin qubits

Authors: Simon E. Nigg, Andreas Fuhrer, Daniel Loss

Abstract: We present a scalable hybrid architecture for the 2D surface code combining superconducting resonators and hole-spin qubits in nanowires with tunable direct Rashba spin-orbit coupling. The back-bone of this architecture is a square lattice of capacitively coupled coplanar waveguide resonators each of which hosts a nanowire hole-spin qubit. Both the frequency of the qubits and their coupling to the… ▽ More We present a scalable hybrid architecture for the 2D surface code combining superconducting resonators and hole-spin qubits in nanowires with tunable direct Rashba spin-orbit coupling. The back-bone of this architecture is a square lattice of capacitively coupled coplanar waveguide resonators each of which hosts a nanowire hole-spin qubit. Both the frequency of the qubits and their coupling to the microwave field are tunable by a static electric field applied via the resonator center pin. In the dispersive regime, an entangling two-qubit gate can be realized via a third order process, whereby a virtual photon in one resonator is created by a first qubit, coherently transferred to a neighboring resonator, and absorbed by a second qubit in that resonator. Numerical simulations with state-of-the-art coherence times yield gate fidelities approaching the $99\%$ fault tolerance threshold. △ Less

Submitted 21 December, 2016; originally announced December 2016.

Comments: 5 pages, 3 figures + supplement

Journal ref: Phys. Rev. Lett. 118, 147701 (2017)

Heavy hole states in Germanium hut wires

Authors: Hannes Watzinger, Christoph Kloeffel, Lada Vukušić, Marta D. Rossell, Violetta Sessi, Josip Kukučka, Raimund Kirchschlager, Elisabeth Lausecker, Alisha Truhlar, Martin Glaser, Armando Rastelli, Andreas Fuhrer, Daniel Loss, Georgios Katsaros

Abstract: Hole spins have gained considerable interest in the past few years due to their potential for fast electrically controlled qubits. Here, we study holes confined in Ge hut wires, a so far unexplored type of nanostructure. Low temperature magnetotransport measurements reveal a large anisotropy between the in-plane and out-of-plane g-factors of up to 18. Numerical simulations verify that this large a… ▽ More Hole spins have gained considerable interest in the past few years due to their potential for fast electrically controlled qubits. Here, we study holes confined in Ge hut wires, a so far unexplored type of nanostructure. Low temperature magnetotransport measurements reveal a large anisotropy between the in-plane and out-of-plane g-factors of up to 18. Numerical simulations verify that this large anisotropy originates from a confined wave function which is of heavy hole character. A light hole admixture of less than 1% is estimated for the states of lowest energy, leading to a surprisingly large reduction of the out-of-plane g-factors. However, this tiny light hole contribution does not influence the spin lifetimes, which are expected to be very long, even in non isotopically purified samples. △ Less

Submitted 11 July, 2016; originally announced July 2016.

Tunnel barrier design in donor nanostructures defined by hydrogen-resist lithography

Authors: Nikola Pascher, Szymon Hennel, Susanne Mueller, Andreas Fuhrer

Abstract: A four-terminal donor quantum dot (QD) is used to characterize potential barriers between degenerately doped nanoscale contacts. The QD is fabricated by hydrogen-resist lithography on Si(001) in combination with $n$-type doping by phosphine. The four contacts have different separations ($d$ = 9, 12, 16 and 29 nm) to the central 6 nm $\times$ 6 nm QD island, leading to different tunnel and capaciti… ▽ More A four-terminal donor quantum dot (QD) is used to characterize potential barriers between degenerately doped nanoscale contacts. The QD is fabricated by hydrogen-resist lithography on Si(001) in combination with $n$-type doping by phosphine. The four contacts have different separations ($d$ = 9, 12, 16 and 29 nm) to the central 6 nm $\times$ 6 nm QD island, leading to different tunnel and capacitive coupling. Cryogenic transport measurements in the Coulomb-blockade (CB) regime are used to characterize these tunnel barriers. We find that field enhancement near the apex of narrow dopant leads is an important effect that influences both barrier breakdown and the magnitude of the tunnel current in the CB transport regime. From CB-spectroscopy measurements, we extract the mutual capacitances between the QD and the four contacts, which scale inversely with the contact separation $d$. The capacitances are in excellent agreement with numerical values calculated from the pattern geometry in the hydrogen resist. We show that by engineering the source-drain tunnel barriers to be asymmetric, we obtain a much simpler excited-state spectrum of the QD, which can be directly linked to the orbital single-particle spectrum. △ Less

Submitted 8 February, 2016; originally announced February 2016.

Comments: 14 pages, 5 figures

Optimizing qubit resources for quantum chemistry simulations in second quantization on a quantum computer

Authors: Nikolaj Moll, Andreas Fuhrer, Peter Staar, Ivano Tavernelli

Abstract: Quantum chemistry simulations on a quantum computer suffer from the overhead needed for encoding the fermionic problem in a bosonic system of qubits. By exploiting the block diagonality of a fermionic Hamiltonian, we show that the number of required qubits can be reduced by a factor of two or more. There is no need to go into the basis of the Hilbert space for this reduction because all operations… ▽ More Quantum chemistry simulations on a quantum computer suffer from the overhead needed for encoding the fermionic problem in a bosonic system of qubits. By exploiting the block diagonality of a fermionic Hamiltonian, we show that the number of required qubits can be reduced by a factor of two or more. There is no need to go into the basis of the Hilbert space for this reduction because all operations can be performed in the operator space. The scheme is conceived as a pre-computational step that would be performed on a classical computer prior to the actual quantum simulation. We apply this scheme to reduce the number of qubits necessary to simulate both the Hamiltonian of the two-site Fermi-Hubbard model and the hydrogen molecule. Both quantum systems can then be simulated with a two-qubit quantum computer. △ Less

Submitted 11 May, 2016; v1 submitted 14 October, 2015; originally announced October 2015.

Journal ref: J. Phys. A: Math. Theor. 49, 295301 (2016)

Interplay of spin-orbit torque and thermoelectric effects in ferromagnet/normal metal bilayers

Authors: Can Onur Avci, Kevin Garello, Mihai Gabureac, Abhijit Ghosh, Andreas Fuhrer, Santos F. Alvarado, Pietro Gambardella

Abstract: We present harmonic transverse voltage measurements of current-induced thermoelectric and spin-orbit torque (SOT) effects in ferromagnet/normal metal bilayers, in which thermal gradients produced by Joule heating and SOT coexist and give rise to ac transverse signals with comparable symmetry and magnitude. Based on the symmetry and field-dependence of the transverse resistance, we develop a consis… ▽ More We present harmonic transverse voltage measurements of current-induced thermoelectric and spin-orbit torque (SOT) effects in ferromagnet/normal metal bilayers, in which thermal gradients produced by Joule heating and SOT coexist and give rise to ac transverse signals with comparable symmetry and magnitude. Based on the symmetry and field-dependence of the transverse resistance, we develop a consistent method to separate thermoelectric and SOT measurements. By addressing first ferromagnet/light metal bilayers with negligible spin-orbit coupling, we show that in-plane current injection induces a vertical thermal gradient whose sign and magnitude are determined by the resistivity difference and stacking order of the magnetic and nonmagnetic layers. We then study ferromagnet/heavy metal bilayers with strong spin-orbit coupling, showing that second harmonic thermoelectric contributions to the transverse voltage may lead to a significant overestimation of the antidamping SOT. We find that thermoelectric effects are very strong in Ta(6nm)/Co(2.5nm) and negligible in Pt(6nm)/Co(2.5nm) bilayers. After including these effects in the analysis of the transverse voltage, we find that the antidamping SOTs in these bilayers, after normalization to the magnetization volume, are comparable to those found in thinner Co layers with perpendicular magnetization, whereas the field-like SOTs are about an order of magnitude smaller. △ Less

Submitted 2 December, 2014; originally announced December 2014.

Comments: 26 pages, 6 figures, 1 table

Journal ref: Phys. Rev. B 90, 224427 (2014)

Evidence for Disorder Induced Delocalization in Graphite

Authors: L. Casparis, A. Fuhrer, D. Hug, D. Kölbl, D. M. Zumbühl

Abstract: We present electrical transport measurements in natural graphite and highly ordered pyrolytic graphite (HOPG), comparing macroscopic samples with exfoliated, nanofabricated specimens of nanometer thickness. The latter exhibit a very large c-axis resistivity $ρ_c$ -- much larger than expected from simple band theory -- and non-monotonic temperature dependence, similar to macroscopic HOPG, but in st… ▽ More We present electrical transport measurements in natural graphite and highly ordered pyrolytic graphite (HOPG), comparing macroscopic samples with exfoliated, nanofabricated specimens of nanometer thickness. The latter exhibit a very large c-axis resistivity $ρ_c$ -- much larger than expected from simple band theory -- and non-monotonic temperature dependence, similar to macroscopic HOPG, but in stark contrast to macroscopic natural graphite. A recent model of disorder-induced delocalization is consistent with our transport data. Furthermore, Micro-Raman spectroscopy reveals clearly reduced disorder in exfoliated samples and HOPG, as expected within the model -- therefore presenting further evidence for a novel paradigm of electronic transport in graphite. △ Less

Submitted 16 March, 2017; v1 submitted 12 January, 2013; originally announced January 2013.

Comments: 5 pages, 4 figures (color)

Breakdown of the Korringa Law of Nuclear Spin Relaxation in Metallic GaAs

Authors: D. Kölbl, D. M. Zumbühl, A. Fuhrer, G. Salis, S. F. Alvarado

Abstract: We present nuclear spin relaxation measurements in GaAs epilayers using a new pump-probe technique in all-electrical, lateral spin-valve devices. The measured T1 times agree very well with NMR data available for T > 1 K. However, the nuclear spin relaxation rate clearly deviates from the well-established Korringa law expected in metallic samples and follows a sub-linear temperature dependence 1/T1… ▽ More We present nuclear spin relaxation measurements in GaAs epilayers using a new pump-probe technique in all-electrical, lateral spin-valve devices. The measured T1 times agree very well with NMR data available for T > 1 K. However, the nuclear spin relaxation rate clearly deviates from the well-established Korringa law expected in metallic samples and follows a sub-linear temperature dependence 1/T1 ~ T^0.6 for 0.1 K < T < 10 K. Further, we investigate nuclear spin inhomogeneities. △ Less

Submitted 22 May, 2012; v1 submitted 21 May, 2012; originally announced May 2012.

Comments: 5 pages, 4 (color) figures. arXiv admin note: text overlap with arXiv:1109.6332

Journal ref: Phys. Rev. Lett. 109, 086601 (2012)

Atomic structure of Mn wires on Si(001) resolved by scanning tunneling microscopy

Authors: A. Fuhrer, F. J. Rueß, N. Moll, A. Curioni, D. Widmer

Abstract: At submonolayer coverage, Mn forms atomic wires on the Si(001) surface oriented perpendicular to the underlying Si dimer rows. While many other elements form symmetric dimer wires at room temperature, we show that Mn wires have an asymmetric appearance and pin the Si dimers nearby. We find that an atomic configuration with a Mn trimer unit cell can explain these observations due to the interplay b… ▽ More At submonolayer coverage, Mn forms atomic wires on the Si(001) surface oriented perpendicular to the underlying Si dimer rows. While many other elements form symmetric dimer wires at room temperature, we show that Mn wires have an asymmetric appearance and pin the Si dimers nearby. We find that an atomic configuration with a Mn trimer unit cell can explain these observations due to the interplay between the Si dimer buckling phase near the wire and the orientation of the Mn trimer. We study the resulting four wire configurations in detail using high-resolution scanning tunneling microscopy (STM) imaging and compare our findings with STM images simulated by density functional theory. △ Less

Submitted 2 May, 2012; originally announced May 2012.

Comments: 4 pages, 4 figures

The Nuclear Spin Environment in Lateral GaAs Spin Valves

Authors: D. Kölbl, D. M. Zumbühl, A. Fuhrer, G. Salis, S. F. Alvarado

Abstract: The spin degree of freedom in solids offers opportunities beyond charge-based electronics and is actively investigated for both spintronics and quantum computation. However, the interplay of these spins with their native environment can give rise to detrimental effects such as spin relaxation and decoherence. Here, we use an all-electrical, lateral GaAs spin valve to manipulate and investigate the… ▽ More The spin degree of freedom in solids offers opportunities beyond charge-based electronics and is actively investigated for both spintronics and quantum computation. However, the interplay of these spins with their native environment can give rise to detrimental effects such as spin relaxation and decoherence. Here, we use an all-electrical, lateral GaAs spin valve to manipulate and investigate the inherent nuclear spin system. Hanle satellites are used to determine the nuclear spin relaxation rates for the previously unexplored temperature range down to 100 mK, giving T1 times as long as 3 hours. Despite metallic temperature dependence of resistivity, the observed relaxation rates show a sub-linear temperature dependence. This contrasts the Korringa relaxation mechanism observed in metals but is not inconsistent with hyperfine-mediated relaxation in a disordered, interacting conductor not far from the metal-insulator transition. We discuss possible relaxation mechanisms and further investigate inhomogeneities in the nuclear spin polarization. △ Less

Submitted 1 October, 2011; v1 submitted 28 September, 2011; originally announced September 2011.

Comments: 6 pages, 4 (color) figures, Fig 1 reloaded on 111001

Spin-injection spectra of CoFe/GaAs contacts: dependence on Fe concentration, interface and annealing conditions

Authors: G. Salis, S. F. Alvarado, A. Fuhrer

Abstract: Spin injection from Co70Fe30 and Fe contacts into bulk GaAs(001) epilayers is studied experimentally. Using nonlocal measurements, the spin polarization of the differential conductance is determined as a function of the bias voltage applied across the injection interface. The spectra reveal an interface-related minority-spin peak at forward bias and a majority-spin peak at reverse bias, and are ve… ▽ More Spin injection from Co70Fe30 and Fe contacts into bulk GaAs(001) epilayers is studied experimentally. Using nonlocal measurements, the spin polarization of the differential conductance is determined as a function of the bias voltage applied across the injection interface. The spectra reveal an interface-related minority-spin peak at forward bias and a majority-spin peak at reverse bias, and are very similar, but shifted in energy, for Co70Fe30 and for Fe contacts. An increase of the spin-injection efficiency and a shift of the spectrum correlate with the Ga-to-As ratio at the interface between CoFe and GaAs. △ Less

Submitted 5 May, 2011; originally announced May 2011.

Comments: 4 pages, 4 figures

Electroweak Radiative Corrections to Higgs Production via Vector Boson Fusion using Soft-Collinear Effective Theory

Authors: Andreas Fuhrer, Aneesh V. Manohar, Wouter J. Waalewijn

Abstract: Soft-collinear effective theory (SCET) is applied to compute electroweak radiative corrections to Higgs production via gauge boson fusion, q q -> q q H. There are several novel features which make this process an interesting application of SCET. The amplitude is proportional to the Higgs vacuum expectation value (VEV), and so is not a gauge singlet amplitude. Standard resummation methods require a… ▽ More Soft-collinear effective theory (SCET) is applied to compute electroweak radiative corrections to Higgs production via gauge boson fusion, q q -> q q H. There are several novel features which make this process an interesting application of SCET. The amplitude is proportional to the Higgs vacuum expectation value (VEV), and so is not a gauge singlet amplitude. Standard resummation methods require a gauge singlet operator and do not apply here. The SCET analysis requires operators with both collinear and soft external fields, with the Higgs VEV being described by an external soft φ field. There is a scalar soft-collinear transition operator in the SCET Lagrangian which contributes to the scattering amplitude, and is derived here. △ Less

Submitted 19 August, 2012; v1 submitted 5 November, 2010; originally announced November 2010.

Comments: Waalewijn added as author. Some errors in previous arXiv version fixed. This version is updated to the published version

Journal ref: Phys.Rev.D84:013007,2011

Pion electroproduction in a nonrelativistic theory

Authors: Andreas Fuhrer

Abstract: A nonrelativistic effective theory to describe the electroproduction reaction of a single pion on the nucleon at leading order in the electromagnetic coupling is constructed. The framework is tailored to accurately describe the cusp generated by the pion and nucleon mass differences. The S- and P- wave multipole amplitudes at two loops for all four reaction channels are provided. As an application… ▽ More A nonrelativistic effective theory to describe the electroproduction reaction of a single pion on the nucleon at leading order in the electromagnetic coupling is constructed. The framework is tailored to accurately describe the cusp generated by the pion and nucleon mass differences. The S- and P- wave multipole amplitudes at two loops for all four reaction channels are provided. As an application, a new low energy theorem is discussed. △ Less

Submitted 30 June, 2010; originally announced July 2010.

Comments: 14 pages, 1 figure

Journal ref: Phys.Lett.B692:130-135,2010

Finite volume effects for nucleon and heavy meson masses

Authors: Gilberto Colangelo, Andreas Fuhrer, Stefan Lanz

Abstract: We apply the resummed version of the Lüscher formula to analyze finite volume corrections to the mass of the nucleon and of heavy mesons. We show that by applying the subthreshold expansion of the scattering amplitudes one can express the finite volume corrections in terms of only a few physical observables and the size of the box. In the case of the nucleon, the available information about the qu… ▽ More We apply the resummed version of the Lüscher formula to analyze finite volume corrections to the mass of the nucleon and of heavy mesons. We show that by applying the subthreshold expansion of the scattering amplitudes one can express the finite volume corrections in terms of only a few physical observables and the size of the box. In the case of the nucleon, the available information about the quark mass dependence of these physical quantities is discussed and used to assess the finite volume corrections to the nucleon mass as a function of the quark mass including a detailed analysis of the remaining uncertainties. For heavy mesons, the Lüscher formula is derived both fully relativistically and in a nonrelativistic approximation and a first attempt at a numerical analysis is made. △ Less

Submitted 13 August, 2010; v1 submitted 10 May, 2010; originally announced May 2010.

Comments: 39 pages, 11 figures, published version

Report number: LU TP 10-12

Journal ref: Phys.Rev.D82:034506,2010

Temperature dependence of the nonlocal voltage in an Fe/GaAs electrical spin injection device

Authors: G. Salis, A. Fuhrer, R. R. Schlittler, L. Gross, S. F. Alvarado

Abstract: The nonlocal spin resistance is measured as a function of temperature in a Fe/GaAs spin-injection device. For nonannealed samples that show minority-spin injection, the spin resistance is observed up to room temperature and decays exponentially with temperature at a rate of 0.018\,K$^{-1}$. Post-growth annealing at 440\,K increases the spin signal at low temperatures, but the decay rate also incre… ▽ More The nonlocal spin resistance is measured as a function of temperature in a Fe/GaAs spin-injection device. For nonannealed samples that show minority-spin injection, the spin resistance is observed up to room temperature and decays exponentially with temperature at a rate of 0.018\,K$^{-1}$. Post-growth annealing at 440\,K increases the spin signal at low temperatures, but the decay rate also increases to 0.030\,K$^{-1}$. From measurements of the diffusion constant and the spin lifetime in the GaAs channel, we conclude that sample annealing modifies the temperature dependence of the spin transfer efficiency at injection and detection contacts. Surprisingly, the spin transfer efficiency increases in samples that exhibit minority-spin injection. △ Less

Submitted 7 April, 2010; originally announced April 2010.

Comments: 10 pages, 4 figures

Radiative Corrections to Longitudinal and Transverse Gauge Boson and Higgs Production

Authors: Andreas Fuhrer, Aneesh V. Manohar, Jui-yu Chiu, Randall Kelley

Abstract: Radiative corrections to gauge boson and Higgs production computed recently using soft-collinear effective theory (SCET) require the one-loop high-scale matching coefficients in the standard model. We give explicit expressions for the matching coefficients for the effective field theory (EFT) operators for q qbar -> VV and q qbar -> phi^+ phi for a general gauge theory with an arbitrary number o… ▽ More Radiative corrections to gauge boson and Higgs production computed recently using soft-collinear effective theory (SCET) require the one-loop high-scale matching coefficients in the standard model. We give explicit expressions for the matching coefficients for the effective field theory (EFT) operators for q qbar -> VV and q qbar -> phi^+ phi for a general gauge theory with an arbitrary number of gauge groups. The group theory factors are given explicitly for the standard model, including both QCD and electroweak corrections. △ Less

Submitted 26 February, 2010; originally announced March 2010.

Comments: 16 pages, 49 figures

Journal ref: Phys.Rev.D81:093005,2010

Photoproduction of neutral pions

Authors: Andreas Fuhrer

Abstract: The pion and nucleon mass differences generate a very pronounced cusp in the photoproduction reaction of a single neutral pion on the proton. A nonrelativistic effective field theory to describe this reaction is constructed. The approach is rigorous in the sense that it is an effective field theory with a consistent power counting scheme. Expressions for the S- and P-wave multipole amplitudes at… ▽ More The pion and nucleon mass differences generate a very pronounced cusp in the photoproduction reaction of a single neutral pion on the proton. A nonrelativistic effective field theory to describe this reaction is constructed. The approach is rigorous in the sense that it is an effective field theory with a consistent power counting scheme. Expressions for the S- and P-wave multipole amplitudes at one loop are given. The relation of the phase of the electric multipole E_0+ to the phase of the S-wave of pi^0 p --> pi^0 p scattering is discussed. △ Less

Submitted 1 October, 2009; originally announced October 2009.

Comments: 9 pages, 1 figure, Proceedings '6th International Workshop on Chiral Dynamics'

Journal ref: PoS CD09:054,2009

Pion photoproduction in a nonrelativistic theory

Authors: Andreas Fuhrer

Abstract: The pion and nucleon mass differences generate a very pronounced cusp in the photoproduction reaction of a single pion on the nucleon. A nonrelativistic effective field theory to describe this reaction is constructed. The approach is rigorous in the sense that it is an effective field theory with a consistent power counting scheme. Expressions for the S- and P-wave multipole amplitudes for all f… ▽ More The pion and nucleon mass differences generate a very pronounced cusp in the photoproduction reaction of a single pion on the nucleon. A nonrelativistic effective field theory to describe this reaction is constructed. The approach is rigorous in the sense that it is an effective field theory with a consistent power counting scheme. Expressions for the S- and P-wave multipole amplitudes for all four reaction channels at two loops are given. △ Less

Submitted 16 September, 2009; originally announced September 2009.

Comments: 13 pages, 2 figures

Journal ref: Phys.Lett.B683:172-177,2010

Probing confined phonon modes by transport through a nanowire double quantum dot

Authors: C. Weber, A. Fuhrer, C. Fasth, G. Lindwall, L. Samuelson, A. Wacker

Abstract: Strong radial confinement in semiconductor nanowires leads to modified electronic and phononic energy spectra. We analyze the current response to the interplay between quantum confinement effects of the electron and phonon systems in a gate-defined double quantum dot in a semiconductor nanowire. We show that current spectroscopy of inelastic transitions between the two quantum dots can be used a… ▽ More Strong radial confinement in semiconductor nanowires leads to modified electronic and phononic energy spectra. We analyze the current response to the interplay between quantum confinement effects of the electron and phonon systems in a gate-defined double quantum dot in a semiconductor nanowire. We show that current spectroscopy of inelastic transitions between the two quantum dots can be used as an experimental probe of the confined phonon environment. The resulting discrete peak structure in the measurements is explained by theoretical modeling of the confined phonon mode spectrum, where the piezoelectric coupling is of crucial importance. △ Less

Submitted 15 February, 2010; v1 submitted 9 September, 2009; originally announced September 2009.

Comments: 4 pages, 4 figures; final version

Journal ref: Phys. Rev. Lett. 104, 036801 (2010)

Soft and Collinear Functions for the Standard Model

Authors: Jui-yu Chiu, Andreas Fuhrer, Randall Kelley, Aneesh V. Manohar

Abstract: Radiative corrections to high energy scattering processes were given previously in terms of universal soft and collinear functions. This paper gives the collinear functions for all standard model particles, the general form of the soft function, and explicit expressions for the soft functions for fermion-fermion scattering, longitudinal and transverse gauge boson production, single W/Z productio… ▽ More Radiative corrections to high energy scattering processes were given previously in terms of universal soft and collinear functions. This paper gives the collinear functions for all standard model particles, the general form of the soft function, and explicit expressions for the soft functions for fermion-fermion scattering, longitudinal and transverse gauge boson production, single W/Z production, and associated Higgs production. An interesting subtlety in the use of the Goldstone boson equivalence theorem for longitudinal W+ production is discussed. △ Less

Submitted 22 September, 2009; v1 submitted 7 September, 2009; originally announced September 2009.

Comments: 23 pages, 12 figures. Typos fixed. Lepton collinear function plot included

Journal ref: Phys.Rev.D81:014023,2010

Factorization Structure of Gauge Theory Amplitudes and Application to Hard Scattering Processes at the LHC

Authors: Jui-yu Chiu, Andreas Fuhrer, Randall Kelley, Aneesh V. Manohar

Abstract: Previous work on electroweak radiative corrections to high energy scattering using soft-collinear effective theory (SCET) has been extended to include external transverse and longitudinal gauge bosons and Higgs bosons. This allows one to compute radiative corrections to all parton-level hard scattering amplitudes in the standard model to NLL order, including QCD and electroweak radiative correct… ▽ More Previous work on electroweak radiative corrections to high energy scattering using soft-collinear effective theory (SCET) has been extended to include external transverse and longitudinal gauge bosons and Higgs bosons. This allows one to compute radiative corrections to all parton-level hard scattering amplitudes in the standard model to NLL order, including QCD and electroweak radiative corrections, mass effects, and Higgs exchange corrections, if the high-scale matching, which is suppressed by two orders in the log counting, and contains no large logs, is known. The factorization structure of the effective theory places strong constraints on the form of gauge theory amplitudes at high energy for massless and massive gauge theories, which are discussed in detail in the paper. The radiative corrections can be written as the sum of process-independent one-particle collinear functions, and a universal soft function. We give plots for the radiative corrections to q qbar -> W_T W_T, Z_T Z_T, W_L W_L, and Z_L H, and gg -> W_T W_T to illustrate our results. The purely electroweak corrections are large, ranging from 12% at 500 GeV to 37% at 2 TeV for transverse W pair production, and increasing rapidly with energy. The estimated theoretical uncertainty to the partonic (hard) cross-section in most cases is below one percent, smaller than uncertainties in the parton distribution functions (PDFs). We discuss the relation between SCET and other factorization methods, and derive the Magnea-Sterman equations for the Sudakov form factor using SCET, for massless and massive gauge theories, and for light and heavy external particles. △ Less

Submitted 20 September, 2009; v1 submitted 31 August, 2009; originally announced September 2009.

Comments: 44 pages, 30 figures. Refs added, typos fixed. ZL ZL plots removed because of a possible subtlety

Journal ref: Phys.Rev.D80:094013,2009

Signatures of dynamically polarized nuclear spins in all-electrical lateral spin transport devices

Authors: G. Salis, A. Fuhrer, S. F. Alvarado

Abstract: The effect of nuclear spins in Fe/GaAs all-electrical spin-injection devices is investigated. At temperatures below 50 K, strong modifications of the non-local spin signal are found that are characteristic for hyperfine coupling between conduction electrons and dynamically polarized nuclear spins. The perpendicular component of the nuclear Overhauser field depolarizes electron spins near zero in… ▽ More The effect of nuclear spins in Fe/GaAs all-electrical spin-injection devices is investigated. At temperatures below 50 K, strong modifications of the non-local spin signal are found that are characteristic for hyperfine coupling between conduction electrons and dynamically polarized nuclear spins. The perpendicular component of the nuclear Overhauser field depolarizes electron spins near zero in-plane external magnetic field, and can suppress such dephasing when antialigned with the external field, leading to satellite peaks in a Hanle measurement. The features observed agree well with a Monte Carlo simulation of the spin diffusion equation including hyperfine interaction, and are used to study the nuclear spin dynamics and relate it to the spin polarization of injected electrons. △ Less

Submitted 3 August, 2009; originally announced August 2009.

Comments: 6 pages, 4 figures

Journal ref: Phys. Rev. B 80, 115332 (2009)

Using SCET to calculate electroweak corrections in gauge boson production

Authors: Jui-yu Chiu, Andreas Fuhrer, Andre H. Hoang, Randall Kelley, Aneesh V. Manohar

Abstract: We extend an effective theory framework developped in Refs. [1,2] to sum electroweak Sudakov logarithms in high energy processes to also include massive gauge bosons in the final state. The calculations require an additional regulator on top of dimensional regularization to tame the collinear singularities. We propose to use the Delta regulator, which respects soft-collinear factorization. We extend an effective theory framework developped in Refs. [1,2] to sum electroweak Sudakov logarithms in high energy processes to also include massive gauge bosons in the final state. The calculations require an additional regulator on top of dimensional regularization to tame the collinear singularities. We propose to use the Delta regulator, which respects soft-collinear factorization. △ Less

Submitted 26 May, 2009; v1 submitted 7 May, 2009; originally announced May 2009.

Comments: 7 pages, reference added

Journal ref: PoS EFT09:009,2009

Soft-Collinear Factorization and Zero-Bin Subtractions

Authors: Jui-yu Chiu, Andreas Fuhrer, Andre H. Hoang, Randall Kelley, Aneesh V. Manohar

Abstract: We study the Sudakov form factor for a spontaneously broken gauge theory using a (new) Delta -regulator. To be well-defined, the effective theory requires zero-bin subtractions for the collinear sectors. The zero-bin subtractions depend on the gauge boson mass M and are not scaleless. They have both finite and 1/epsilon contributions, and are needed to give the correct anomalous dimension and lo… ▽ More We study the Sudakov form factor for a spontaneously broken gauge theory using a (new) Delta -regulator. To be well-defined, the effective theory requires zero-bin subtractions for the collinear sectors. The zero-bin subtractions depend on the gauge boson mass M and are not scaleless. They have both finite and 1/epsilon contributions, and are needed to give the correct anomalous dimension and low-scale matching contributions. We also demonstrate the necessity of zero-bin subtractions for soft-collinear factorization. We find that after zero-bin subtractions the form factor is the sum of the collinear contributions 'minus' a soft mass-mode contribution, in agreement with a previous result of Idilbi and Mehen in QCD. This appears to conflict with the method-of-regions approach, where one gets the sum of contributions from different regions. △ Less

Submitted 21 January, 2009; v1 submitted 9 January, 2009; originally announced January 2009.

Comments: 9 pages, 5 figures. V2:ref added

Journal ref: Phys.Rev.D79:053007,2009