Reducing strain fluctuations in quantum dot devices by gate-layer stacking
Authors:
Collin C. D. Frink,
Benjamin D. Woods,
Merritt P. Losert,
E. R. MacQuarrie,
M. A. Eriksson,
Mark Friesen
Abstract:
Nanofabricated metal gate electrodes are commonly used to confine and control electrons in electrostatically defined quantum dots. However, these same gates impart a complicated strain geometry that affects the confinement potential and potentially impairs device functionality. Here we investigate strain-induced fluctuations of the potential energy in Si/SiGe heterostructures, caused by (i) lattic…
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Nanofabricated metal gate electrodes are commonly used to confine and control electrons in electrostatically defined quantum dots. However, these same gates impart a complicated strain geometry that affects the confinement potential and potentially impairs device functionality. Here we investigate strain-induced fluctuations of the potential energy in Si/SiGe heterostructures, caused by (i) lattice mismatch, (ii) materials-dependent thermal contraction, and (iii) deposition stress in the metal gates. By simulating different gate geometries, ranging from simple to realistically complicated, and including features like overlapping metal and oxide layers, we can explain most observed strain features. In particular, we show that strain-induced potential fluctuations can be suppressed by employing overlapping gates that cover the whole active region, when the oxide layers are thin. These results suggest that strain effects should not present a serious challenge to qubit uniformity when following simple design rules.
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Submitted 6 January, 2024; v1 submitted 14 December, 2023;
originally announced December 2023.
Coupling conduction-band valleys in SiGe heterostructures via shear strain and Ge concentration oscillations
Authors:
Benjamin D. Woods,
Hudaiba Soomro,
E. S. Joseph,
Collin C. D. Frink,
Robert Joynt,
M. A. Eriksson,
Mark Friesen
Abstract:
Engineering conduction-band valley couplings is a key challenge for Si-based spin qubits. Recent work has shown that the most reliable method for enhancing valley couplings entails adding Ge concentration oscillations to the quantum well. However, ultrashort oscillation periods are difficult to grow, while long oscillation periods do not provide useful improvements. Here, we show that the main ben…
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Engineering conduction-band valley couplings is a key challenge for Si-based spin qubits. Recent work has shown that the most reliable method for enhancing valley couplings entails adding Ge concentration oscillations to the quantum well. However, ultrashort oscillation periods are difficult to grow, while long oscillation periods do not provide useful improvements. Here, we show that the main benefits of short-wavelength oscillations can be achieved in long-wavelength structures through a second-order coupling process involving Brillouin-zone folding induced by shear strain. We finally show that such strain can be achieved through common fabrication techniques, making this an exceptionally promising system for scalable quantum computing.
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Submitted 31 May, 2024; v1 submitted 28 October, 2023;
originally announced October 2023.
