Showing 1–46 of 46 results for author: Freeman, A J

Superconductivity in CuCl/Si: possible excitonic pairing?

Authors: S. H. Rhim, Rolando Saniz, M. Weinert, A. J. Freeman

Abstract: The search for superconductivity with higher transition temperature ($T_C$) has long been a challenge in research efforts ever since its first discovery in 1911. The effort has led to the discovery of various kinds of superconductors and progress in the understanding of this intriguing phenomenon. The increase of $T_C$ has also evolved; however, the dream of realizing room-temperature superconduct… ▽ More The search for superconductivity with higher transition temperature ($T_C$) has long been a challenge in research efforts ever since its first discovery in 1911. The effort has led to the discovery of various kinds of superconductors and progress in the understanding of this intriguing phenomenon. The increase of $T_C$ has also evolved; however, the dream of realizing room-temperature superconductivity is far from reality. For superconductivity to emerge, the effective quasiparticle interaction should overcome the repulsive Coulomb interaction. This can be realized via lattice or spin degrees of freedom. An alternative pairing mechanism, the excitonic mechanism, was proposed 50 years ago, hoping to achieve higher $T_C$ than by phonon mediation. As none of physics principles has ever prevented excitonic pairing, the excitonic pairing mechanism is revisited here and we show that the effective quasiparticle interaction without lattice and spin can be attractive solely electronically. △ Less

Submitted 6 October, 2016; v1 submitted 13 October, 2015; originally announced October 2015.

Comments: 5 pages, 6 figures

Strain-induced Giant Second-harmonic Generation in Monolayered $2H$-MoX$_2$ (X=S,Se,Te)

Authors: S. H. Rhim, Yong Soo Kim, A. J. Freeman

Abstract: Dynamic second-order nonlinear susceptibilities, $χ^{(2)}(2ω,ω,ω)\equiv χ^{(2)}(ω)$, are calculated here within a fully first-principles scheme for monolayered molybdenum dichalcogenides, $2H$-MoX$_2$ (X=S,Se,Te). The absolute values of $χ^{(2)}(ω)$ across the three chalcogens critically depend on the band gap energies upon uniform strain, yielding the highest $χ^{(2)}(0)\sim$ 140 pm/V for MoTe… ▽ More Dynamic second-order nonlinear susceptibilities, $χ^{(2)}(2ω,ω,ω)\equiv χ^{(2)}(ω)$, are calculated here within a fully first-principles scheme for monolayered molybdenum dichalcogenides, $2H$-MoX$_2$ (X=S,Se,Te). The absolute values of $χ^{(2)}(ω)$ across the three chalcogens critically depend on the band gap energies upon uniform strain, yielding the highest $χ^{(2)}(0)\sim$ 140 pm/V for MoTe$_2$ in the static limit. Under this uniform in-plane stress, $2H$-MoX$_2$ can undergo direct-to-indirect transition of band gaps, which in turn substantially affects $χ^{(2)}(ω)$. The tunability of $χ^{(2)}(ω)$ by either compressive or tensile strain is demonstrated especially for two important experimental wavelengths, 1064 nm and 800 nm, where resonantly enhanced non-linear effects can be exploited: $χ^{(2)}$ of MoSe$_2$ and MoTe$_2$ approach $\sim$800 pm/V with -2\% strain at 1064 nm. △ Less

Submitted 3 November, 2015; v1 submitted 20 April, 2015; originally announced April 2015.

Comments: 4 pages 4 figures,submitted to Phys. Rev. B, Accepted for Appl. Phys. Lett

Journal ref: Appl. Phys. Lett. 107, 241908 (2015)

Search and design of nonmagnetic centrosymmetric layered crystals with large local spin polarization

Authors: Qihang Liu, Xiuwen Zhang, Hosub Jin, Kanber Lam, Jino Im, Arthur J. Freeman, Alex Zunger

Abstract: Until recently, spin-polarization in nonmagnetic materials was the exclusive territory of non- centrosymmetric structures. It was recently shown that a form of hidden spin polarization (named the Rashba-2 or R-2 effect) could exist in globally centrosymmetric crystals provided the individual layers belong to polar point group symmetries. This realization could considerably broaden the range of mat… ▽ More Until recently, spin-polarization in nonmagnetic materials was the exclusive territory of non- centrosymmetric structures. It was recently shown that a form of hidden spin polarization (named the Rashba-2 or R-2 effect) could exist in globally centrosymmetric crystals provided the individual layers belong to polar point group symmetries. This realization could considerably broaden the range of materials that might be considered for spin-polarization spintronic applications to include the hitherto forbidden spintronic compound that belong to centrosymetric symmetries. Here we take the necessary steps to transition from such general, material-agnostic condensed matter theory arguments to material-specific design principles that could aid future laboratory search of R-2 materials. Specifically, we (i) classify different prototype layered structures that have been broadly studied in the literature in terms of their expected R-2 behavior, including the Bi2Se3-structure type (a prototype topological insulator), MoS2-structure type (a prototype valleytronic compound) and LaBiOS2-structure type (a host of superconductivity upon doping); (ii) formulate the properties that ideal R-2 compounds should have in terms of combination of their global unit cell symmetries with specific point group symmetries of their constituent sectors; (iii) use first-principles band theory to search for compounds from the prototype family of LaOBiS2-type structures that satisfy these R-2 design metrics. We initially consider both stable and hypothetical compounds to establish an understanding of trends of R-2 with composition, and then indicate the predictions that are expected to be stable and synthesizable. We predict large spin splittings (up to ~ 200 meV for holes in LaOBiTe2) as well as surface Rashba states. Experimental testing of such predictions is called for. △ Less

Submitted 3 June, 2015; v1 submitted 26 August, 2014; originally announced August 2014.

Comments: 29 pages, 6 figures, 2 tables

Journal ref: Phys. Rev. B 91, 235204 (2015)

Hidden spin polarization in inversion-symmetric bulk crystals

Authors: Xiuwen Zhang, Qihang Liu, Jun-Wei Luo, Arthur. J. Freeman, Alex Zunger

Abstract: Spin-orbit coupling (SOC) can induce spin polarization in nonmagnetic 3D crystals when the inversion symmetry is broken, as manifested by the bulk Rashba (R-1) and Dresselhaus (D-1) effects. We determine that these spin polarization effects originate fundamentally from specific atomic site asymmetries, rather than from the generally accepted asymmetry of the crystal space-group. This understanding… ▽ More Spin-orbit coupling (SOC) can induce spin polarization in nonmagnetic 3D crystals when the inversion symmetry is broken, as manifested by the bulk Rashba (R-1) and Dresselhaus (D-1) effects. We determine that these spin polarization effects originate fundamentally from specific atomic site asymmetries, rather than from the generally accepted asymmetry of the crystal space-group. This understanding leads to the recognition that a previously overlooked hidden form of spin polarization should exist in centrosymmetric materials. Although all energy bands must be doubly degenerate in centrosymmetric materials, we find that the two components of such doubly degenerate bands could have opposite polarizations each spatially localized on one of the two separate sectors forming the inversion partners. We demonstrate such hidden spin polarizations in centrosymmetric crystals (denoted as R-2 and D-2) by first-principles calculations. This new understanding could considerably broaden the range of currently useful spintronic materials and enable control of spin polarization via operations on atomic scale. △ Less

Submitted 18 February, 2014; originally announced February 2014.

Comments: 23 pages, 5 figures

Journal ref: Nature Physics 10, 387 (2014)

Role of spin-orbit coupling on the electronic structure and properties of SrPtAs

Authors: S. J. Youn, S. H. Rhim, D. F. Agterberg, M. Weinert, A. J. Freeman

Abstract: The effect of spin-orbit coupling on the electronic structure of the layered iron-free pnictide superconductor, SrPtAs, has been studied using the full potential linearized augmented plane wave method. The anisotropy in Fermi velocity, conductivity and plasma frequency stemming from the layered structure are found to be enhanced by spin-orbit coupling. The relationship between spin-orbit interacti… ▽ More The effect of spin-orbit coupling on the electronic structure of the layered iron-free pnictide superconductor, SrPtAs, has been studied using the full potential linearized augmented plane wave method. The anisotropy in Fermi velocity, conductivity and plasma frequency stemming from the layered structure are found to be enhanced by spin-orbit coupling. The relationship between spin-orbit interaction and the lack of two-dimensional inversion in the PtAs layers is analyzed within a tight-binding Hamiltonian based on the first-principles calculations. Finally, the band structure suggests that electron doping could increase $T_c$. △ Less

Submitted 8 February, 2012; originally announced February 2012.

Comments: 7 pages, 5 figures

Electronic Structure and Properties of SrAlGe and BaAlGe

Authors: S. J. Youn, A. J. Freeman

Abstract: The electronic structures of BaAlGe and SrAlGe which are superconductors with hexagonal honeycomb layers have been studied by using a first principles method. Energy bands, Fermi surafces, and density of states are presented. The two materials have topologically different Fermi surfaces. BaAlGe has two Fermi surfaces: One has a three dimensional spinning-top-like shape and the other has a cylindri… ▽ More The electronic structures of BaAlGe and SrAlGe which are superconductors with hexagonal honeycomb layers have been studied by using a first principles method. Energy bands, Fermi surafces, and density of states are presented. The two materials have topologically different Fermi surfaces. BaAlGe has two Fermi surfaces: One has a three dimensional spinning-top-like shape and the other has a cylindrical shape with two dimensional character. SrAlGe has only one connected Fermi surface. Two gap superconductivity for BaAlGe is suggested from the inherently different character of the two Fermi surfaces. The higher $T_c$ of SrAlGe than BaAlGe is related to the difference in both the topology of the Fermi surface and the band dispersions along the $z$ direction. △ Less

Submitted 2 February, 2012; originally announced February 2012.

Comments: 5 pages, 7 figures

Ab initio prediction of pressure-induced structural phase transition of superconducting FeSe

Authors: Gul Rahman, In Gee Kim, Arthur J. Freeman

Abstract: External pressure driven phase transitions of FeSe are predicted using \textit{ab initio} calculations. The calculations reveal that $α$-FeSe takes transitions to NiAs-type, MnP-type, and CsCl-type FeSe. Transitions from NiAs-type to MnP-type and CsCl-type FeSe is also predicted. MnP-type FeSe is also found to be able to transform to CsCl-type FeSe, which is easier from $α$-FeSe than the transitio… ▽ More External pressure driven phase transitions of FeSe are predicted using \textit{ab initio} calculations. The calculations reveal that $α$-FeSe takes transitions to NiAs-type, MnP-type, and CsCl-type FeSe. Transitions from NiAs-type to MnP-type and CsCl-type FeSe is also predicted. MnP-type FeSe is also found to be able to transform to CsCl-type FeSe, which is easier from $α$-FeSe than the transition to MnP-type FeSe, but comparable to the transition from NiAs-type FeSe. The calculated electronic structures show that all phases of FeSe are metallic, but the ionic interaction between Fe-Se bonds becomes stronger and the covalent interaction becomes weaker when the structural phase transition occurs from $α$-FeSe to the other phases of FeSe. The experimentally observed decrease in $T_{c}$ of superconducting $α$-FeSe at high pressure may be due to a structural/magnetic instability, which exists at high pressure. The results suggest us to increase the $T_{c}$ of $α$-FeSe if such phase transitions are frustrated by suitable methods. △ Less

Submitted 26 January, 2012; originally announced January 2012.

Comments: Accepted for publications in J. Phys.: Condens. Matter (2012)

New Candidates for Topological Insulators : Pb-based chalcogenide series

Authors: Hosub Jin, Jung-Hwan Song, Arthur J. Freeman, Mercouri G. Kanatzidis

Abstract: Here, we theoretically predict that the series of Pb-based layered chalcogenides, Pb$_n$Bi$_2$Se$_{n+3}$ and Pb$_n$Sb$_2$Te$_{n+3}$, are possible new candidates for topological insulators. As $n$ increases, the phase transition from a topological insulator to a band insulator is found to occur between $n=2$ and 3 for both series. Significantly, among the new topological insulators, we found a bulk… ▽ More Here, we theoretically predict that the series of Pb-based layered chalcogenides, Pb$_n$Bi$_2$Se$_{n+3}$ and Pb$_n$Sb$_2$Te$_{n+3}$, are possible new candidates for topological insulators. As $n$ increases, the phase transition from a topological insulator to a band insulator is found to occur between $n=2$ and 3 for both series. Significantly, among the new topological insulators, we found a bulk band gap of 0.40eV in PbBi$_2$Se$_4$ which is one of the largest gap topological insulators, and that Pb$_2$Sb$_2$Te$_5$ is located in the immediate vicinity of the topological phase boundary, making its topological phase easily tunable by changing external parameters such as lattice constants. Due to the three-dimensional Dirac cone at the phase boundary, massless Dirac fermions also may be easily accessible in Pb$_2$Sb$_2$Te$_5$. △ Less

Submitted 30 July, 2010; originally announced July 2010.

First-principles prediction of spin-density-reflection symmetry driven magnetic transition of CsCl-type FeSe

Authors: Gul Rahman, In Gee Kim, Arthur J. Freeman

Abstract: Based on results of density functional theory (DFT) calculations with the local spin density approximation (LSDA) and the generalized gradient approximation (GGA), we propose a new magnetic material, CsCl-type FeSe. The calculations reveal the existence of ferromagnetic (FM) and antiferromagnetic (AFM) states over a wide range of lattice constants. At 3.12\,Å in the GGA, the equilibrium state is f… ▽ More Based on results of density functional theory (DFT) calculations with the local spin density approximation (LSDA) and the generalized gradient approximation (GGA), we propose a new magnetic material, CsCl-type FeSe. The calculations reveal the existence of ferromagnetic (FM) and antiferromagnetic (AFM) states over a wide range of lattice constants. At 3.12\,Å in the GGA, the equilibrium state is found to be AFM with a local Fe magnetic moment of $\pm 2.69\,μ_\mathrm{B}$. A metastable FM state with Fe and Se local magnetic moments of $2.00\,μ_\mathrm{B}$ and $-0.032\,μ_\mathrm{B}$, respectively, lies 171.7\,{meV} above the AFM state. Its equilibrium lattice constant is $\sim 2$\,{\%} smaller than that of the AFM state, implying that when the system undergoes a phase transition from the AFM state to the FM one, the transition is accompanied by volume contraction. Such an AFM-FM transition is attributed to spin-density $z$-reflection symmetry; the symmetry driven AFM-FM transition is not altered by spin-orbit coupling. The relative stability of different magnetic phases is discussed in terms of the local density of states. We find that CsCl-type FeSe is mechanically stable, but the magnetic states are expected to be brittle. △ Less

Submitted 13 July, 2010; v1 submitted 27 May, 2010; originally announced May 2010.

Comments: LaTeX,16 pages, 6 figures

Journal ref: Journal of Magnetism and Magnetic Materials 322 (2010) 3153-3158

First-principles investigation of magnetism and electronic structures of substitutional $3d$ transition-metal impurities in bcc Fe

Authors: Gul Rahman, In Gee Kim, H. K. D. H. Bhadeshia, Arthur J. Freeman

Abstract: The magnetic and electronic structures of $3d$ impurity atoms from Sc to Zn in ferromagnetic body-centered cubic iron are investigated using the all-electron full-potential linearized augmented plane-wave method based on the generalized gradient approximation (GGA). We found that in general, the GGA results are closer to the experimental values than those of the local spin density approximation. T… ▽ More The magnetic and electronic structures of $3d$ impurity atoms from Sc to Zn in ferromagnetic body-centered cubic iron are investigated using the all-electron full-potential linearized augmented plane-wave method based on the generalized gradient approximation (GGA). We found that in general, the GGA results are closer to the experimental values than those of the local spin density approximation. The calculated formation enthalpy data indicate the importance of a systematic study on the ternary Fe-C-$X$ systems rather than the binary Fe-$X$ systems, in steel design. The lattice parameters are optimized and the conditions for spin polarization at the impurity sites are discussed in terms of the local Stoner model. Our calculations, which are consistent with previous work, imply that the local spin-polarizations at Sc, Ti, V, Cu, and Zn are induced by the host Fe atoms. The early transition-metal atoms couple antiferromagnetically, while the late transition-metal atoms couple ferromagnetically, to the host Fe atoms. The calculated total magnetization ($M$) of bcc Fe is reduced by impurity elements from Sc to Cr as a result of the antiferromagnetic interaction, with the opposite effect for solutes which couple ferromagnetically. The changes in $M$ are attributed to nearest neighbor interactions, mostly between the impurity and host atoms. The atom averaged magnetic moment is shown to follow generally the well-known Slater-Pauling curve, but our results do not follow the linearity of the Slater-Pauling curve. We attribute this discrepancy to the weak ferromagnetic nature of bcc Fe. The calculated Fermi contact hyperfine fields follow the trend of the local magnetic moments. The effect of spin-orbit coupling is found not to be significant although it comes into prominence at locations far from the impurity sites. △ Less

Submitted 24 May, 2010; v1 submitted 3 May, 2010; originally announced May 2010.

Comments: 26 pages, 11 figures

Journal ref: Phys. Rev. B 81, 184423 (2010)

Dirac cone engineering in Bi$_2$Se$_3$ thin films

Authors: Hosub Jin, Jung-Hwan Song, Arthur J. Freeman

Abstract: Topological insulators are distinguished from normal insulators by their bulk insulating gap and odd number of surface states connecting the inverted conduction and valence bands and showing Dirac cones at the time-reversal invariant points in the Brillouin zone. Bi-based three-dimensional strong topological insulator materials, Bi$_2$Se$_3$ and Bi$_2$Te$_2$, are known as high temperature topologi… ▽ More Topological insulators are distinguished from normal insulators by their bulk insulating gap and odd number of surface states connecting the inverted conduction and valence bands and showing Dirac cones at the time-reversal invariant points in the Brillouin zone. Bi-based three-dimensional strong topological insulator materials, Bi$_2$Se$_3$ and Bi$_2$Te$_2$, are known as high temperature topological insulators for their relatively large bulk gap and have one simple Dirac cone at the $Γ$ point. In spite of their clear surface state Dirac cone features, the Dirac point known as a Kramers point and the topological transport regime is located below the bulk valence band maximum. As a result of a non-isolated Dirac point, the topological transport regime can not be acquired and there possibly exist scattering channels between surface and bulk states as well. In this article we show that an ideal and isolated Dirac cone is realized in a slab geometry made of Bi$_2$Se$_3$ with appropriate substitutions of surface Se atoms. In addition to Dirac cone engineering by surface atom substitutions, we also investigate Bi$_2$Se$_3$ thin films in terms of thickness and magnetic substitutions, which can be linked to applications of spintronics devices. △ Less

Submitted 16 April, 2010; v1 submitted 9 April, 2010; originally announced April 2010.

Comments: 4 figures

Orbital mixing and nesting in the bilayer manganites La$_{2-2x}$Sr$_{1+2x}$Mn$_2$O$_7$

Authors: R. Saniz, M. R. Norman, A. J. Freeman

Abstract: A first principles study of La$_{2-2x}$Sr$_{1+2x}$Mn$_2$O$_7$ compounds for doping levels $0.3\leq x\leq 0.5$ shows that the low energy electronic structure of the majority spin carriers is determined by strong momentum dependent interactions between the Mn $e_g$ $d_{x^2-y^2}$ and $d_{3z^2-r^2}$ orbitals, which in addition to an $x$ dependent Jahn-Teller distortion, differ in the ferromagnetic a… ▽ More A first principles study of La$_{2-2x}$Sr$_{1+2x}$Mn$_2$O$_7$ compounds for doping levels $0.3\leq x\leq 0.5$ shows that the low energy electronic structure of the majority spin carriers is determined by strong momentum dependent interactions between the Mn $e_g$ $d_{x^2-y^2}$ and $d_{3z^2-r^2}$ orbitals, which in addition to an $x$ dependent Jahn-Teller distortion, differ in the ferromagnetic and antiferromagnetic phases. The Fermi surface exhibits nesting behavior that is reflected by peaks in the static susceptibility, whose positions as a function of momentum have a non-trivial dependence on $x$. △ Less

Submitted 23 December, 2008; v1 submitted 20 July, 2008; originally announced July 2008.

Comments: 4 pages, 5 figures, published

Journal ref: Phys. Rev. Lett. 101, 236402 (2008)

Magneto-optical properties of (Ga,Mn)As: an ab--initio determination

Authors: A. Stroppa, S. Picozzi, A. Continenza, M. Y. Kim, A. J. Freeman

Abstract: The magneto-optical properties of (Ga,Mn)As have been determined within density functional theory using the highly precise full-potential linear augmented plane wave (FLAPW) method. A detailed investigation of the electronic and magnetic properties in connection to the magneto-optic effects is reported. The spectral features of the optical tensor in the 0-10 eV energy range are analyzed in terms… ▽ More The magneto-optical properties of (Ga,Mn)As have been determined within density functional theory using the highly precise full-potential linear augmented plane wave (FLAPW) method. A detailed investigation of the electronic and magnetic properties in connection to the magneto-optic effects is reported. The spectral features of the optical tensor in the 0-10 eV energy range are analyzed in terms of the band structure and density of states and the essential role of the dipole matrix elements is highlighted by means of Brillouin zone dissection. Using an explicit representation of the Kerr angle in terms of real and imaginary parts of the tensor components, a careful analysis of the Kerr spectra is also presented. The results of our study can be summarized as follows: i) different types of interband transitions do contribute in shaping the conductivity tensor; ii) the dipole matrix elements are important in obtaining the correct optical spectra; iii) different regions in the irreducible Brillouin zone contribute to the conductivity very differently; iv) a minimum in the Re $σ_{xx}$ spectra can give rise to a large Kerr rotation angle in the same energy region; and v) materials engineering via the magneto-optical Kerr effect is possible provided that the electronic structure of the material can be tuned in such a way as to \emph{enhance} the depth of the minima of Re $σ_{xx}$. △ Less

Submitted 10 December, 2007; originally announced December 2007.

Comments: 33 pages, 7 figures, accepted for publication in Phys. Rev. B

Journal ref: Phys. Rev. B 77, 035208 (2008)

Optical and magneto-optical properties of ferromagnetic full-Heusler films: experiments and first-principles calculations

Authors: F. Ricci, S. Picozzi, A. Continenza, F. D'Orazio, F. Lucari, K. Westerholt, M. Kim, A. J. Freeman

Abstract: We report a joint theoretical and experimental study focused on understanding the optical and magneto-optical properties of Co-based full-Heusler compounds. We show that magneto-optical spectra calculated within ab-initio density functional theory are able to uniquely identify the features of the experimental spectra in terms of spin resolved electronic transitions. As expected for 3d-based magn… ▽ More We report a joint theoretical and experimental study focused on understanding the optical and magneto-optical properties of Co-based full-Heusler compounds. We show that magneto-optical spectra calculated within ab-initio density functional theory are able to uniquely identify the features of the experimental spectra in terms of spin resolved electronic transitions. As expected for 3d-based magnets, we find that the largest Kerr rotation for these alloys is of the order of 0.3o in polar geometry. In addition, we demonstrate that (i) multilayered structures have to be carefully handled in the theoretical calculations in order to improve the agreement with experiments, and (ii) combined theoretical and experimental investigations constitute a powerful approach to designing new materials for magneto-optical and spin-related applications △ Less

Submitted 25 June, 2007; originally announced June 2007.

Comments: 20 pages, including 6 figures and 1 table. 40 refs. To be published in Phys. Rev. B

Physisorption of positronium on quartz surfaces

Authors: R. Saniz, B. Barbiellini, P. M. Platzman, A. J. Freeman

Abstract: The possibility of having positronium (Ps) physisorbed at a material surface is of great fundamental interest, since it can lead to new insight regarding quantum sticking and is a necessary first step to try to obtain a Ps$_2$ molecule on a material host. Some experiments in the past have produced evidence for physisorbed Ps on a quartz surface, but firm theoretical support for such a conclusion… ▽ More The possibility of having positronium (Ps) physisorbed at a material surface is of great fundamental interest, since it can lead to new insight regarding quantum sticking and is a necessary first step to try to obtain a Ps$_2$ molecule on a material host. Some experiments in the past have produced evidence for physisorbed Ps on a quartz surface, but firm theoretical support for such a conclusion was lacking. We present a first-principles density-functional calculation of the key parameters determining the interaction potential between Ps and an $α$-quartz surface. We show that there is indeed a bound state with an energy of 0.14 eV, a value which agrees very well with the experimental estimate of $\sim0.15$ eV. Further, a brief energy analysis invoking the Langmuir-Hinshelwood mechanism for the reaction of physisorbed atoms shows that the formation and desorption of a Ps$_2$ molecule in that picture is consistent with the above results. △ Less

Submitted 30 April, 2007; originally announced May 2007.

Comments: 5 pages, 3 figures, submitted

Journal ref: Phys. Rev. Lett. 99, 096101 (2007)

Magneto-optics in pure and defective Ga_{1-x}Mn_xAs from first-principles

Authors: S. Picozzi, A. Continenza, M. Kim, A. J. Freeman

Abstract: The magneto-optical properties of Ga$_{1-x}$Mn$_{x}$As including their most common defects were investigated with precise first--principles density-functional FLAPW calculations in order to: {\em i}) elucidate the origin of the features in the Kerr spectra in terms of the underlying electronic structure; {\em ii}) perform an accurate comparison with experiments; and {\em iii}) understand the rol… ▽ More The magneto-optical properties of Ga$_{1-x}$Mn$_{x}$As including their most common defects were investigated with precise first--principles density-functional FLAPW calculations in order to: {\em i}) elucidate the origin of the features in the Kerr spectra in terms of the underlying electronic structure; {\em ii}) perform an accurate comparison with experiments; and {\em iii}) understand the role of the Mn concentration and occupied sites in shaping the spectra. In the substitutional case, our results show that most of the features have an interband origin and are only slightly affected by Drude--like contributions, even at low photon energies. While not strongly affected by the Mn concentration for the intermediately diluted range ($x\sim$ 10%), the Kerr factor shows a marked minimum (up to 1.5$^o$) occurring at a photon energy of $\sim$ 0.5 eV. For interstitial Mn, the calculated results bear a striking resemblance to the experimental spectra, pointing to the comparison between simulated and experimental Kerr angles as a valid tool to distinguish different defects in the diluted magnetic semiconductors framework. △ Less

Submitted 26 October, 2005; originally announced October 2005.

Comments: 10 pages including 2 figures, submitted to Phys. Rev. B

Atomic size effect in impurity indued grain boundary embrittlement

Authors: W. T. Geng, A. J. Freeman, G. B. Olson

Abstract: Bismuth segregated to the grain boundary in Cu is known to promote brittle fracture of this material. Recently, Schweinfest et al. reported first-principles quantum mechanical calculations on the electronic and structural properties of a Cu grain boundary with and without segregated Bi and argue that the grain boundary weakening induced by Bi is a simple atomic size effect. But their conclusion… ▽ More Bismuth segregated to the grain boundary in Cu is known to promote brittle fracture of this material. Recently, Schweinfest et al. reported first-principles quantum mechanical calculations on the electronic and structural properties of a Cu grain boundary with and without segregated Bi and argue that the grain boundary weakening induced by Bi is a simple atomic size effect. But their conclusion is invalid for both Bi and Pb because it fails to distinguish the chemical and mechanical (atomic size) contributions, as obtained with our recently developed first-principles based phenomenological theory. △ Less

Submitted 31 July, 2005; originally announced August 2005.

Comments: 4 pages

Pressure effects on the electronic properties and superconductivity in the $β$-pyrochlore oxides: $A$Os$_2$O$_6$ ($A$ = Na, K, Rb, Cs)

Authors: R. Saniz, A. J. Freeman

Abstract: We present a first-principles study of the electronic structure and superconducting parameters of the compounds $A$Os$_2$O$_6$ ($A$ = Na, K, Rb, and Cs) and at ambient and applied hydrostatic pressure. We find that the sensitivity of the density of states at the Fermi energy, $E_{\rm F}$, and related electronic properties to the size of the alkali metal atom as well as to applied pressure is dri… ▽ More We present a first-principles study of the electronic structure and superconducting parameters of the compounds $A$Os$_2$O$_6$ ($A$ = Na, K, Rb, and Cs) and at ambient and applied hydrostatic pressure. We find that the sensitivity of the density of states at the Fermi energy, $E_{\rm F}$, and related electronic properties to the size of the alkali metal atom as well as to applied pressure is driven by a van Hove singularity with energy very close to $E_{\rm F}$. Further, a computation of the superconducting parameters of these materials allows us to show that the observed change of $T_c$, both upon substitution of the alkali metal and under applied hydrostatic pressure, can be well understood within a phonon-mediated pairing scenario. In this regard, we find that the correction to the effective electron mass due to spin fluctuations plays a significant role. △ Less

Submitted 1 June, 2005; originally announced June 2005.

Comments: 8 pages, 4 figures; to appear in Phys. Rev. B

Tunable Conductivity and Conduction Mechanism in a UV light activated electronic conductor

Authors: M. I. Bertoni, T. O. Mason, J. E. Medvedeva, A. J. Freeman, K. R. Poeppelmeier, B. Delley

Abstract: A tunable conductivity has been achieved by controllable substitution of a novel UV light activated electronic conductor. The transparent conducting oxide system H-doped Ca12-xMgxAl14O33 (x = 0; 0.1; 0.3; 0.5; 0.8; 1.0) presents a conductivity that is strongly dependent on the substitution level and temperature. Four-point dc-conductivity decreases with x from 0.26 S/cm (x = 0) to 0.106 S/cm (x… ▽ More A tunable conductivity has been achieved by controllable substitution of a novel UV light activated electronic conductor. The transparent conducting oxide system H-doped Ca12-xMgxAl14O33 (x = 0; 0.1; 0.3; 0.5; 0.8; 1.0) presents a conductivity that is strongly dependent on the substitution level and temperature. Four-point dc-conductivity decreases with x from 0.26 S/cm (x = 0) to 0.106 S/cm (x = 1) at room temperature. At each composition the conductivity increases (reversibly with temperature) until a decomposition temperature is reached; above this value, the conductivity drops dramatically due to hydrogen recombination and loss. The observed conductivity behavior is consistent with the predictions of our first principles density functional calculations for the Mg-substituted system with x=0, 1 and 2. The Seebeck coefficient is essentially composition- and temperature-independent, the later suggesting the existence of an activated mobility associated with small polaron conduction. The optical gap measured remains constant near 2.6 eV while transparency increases with the substitution level, concomitant with a decrease in carrier content. △ Less

Submitted 1 November, 2004; originally announced November 2004.

Comments: Submitted for publication

Journal ref: Journal of Applied Physics, 97, 103713 (2005)

Half-metallicity and efficient spin injection in AlN/GaN:Cr (0001) heterostructure

Authors: J. E. Medvedeva, A. J. Freeman, X. Y. Cui, C. Stampfl, N. Newman

Abstract: First-principles investigations of the structural, electronic and magnetic properties of Cr-doped AlN/GaN (0001) heterostructures reveal that Cr segregates into the GaN region, that these interfaces retain their important half-metallic character and thus yield efficient (100 %) spin polarized injection from a ferromagnetic GaN:Cr electrode through an AlN tunnel barrier - whose height and width c… ▽ More First-principles investigations of the structural, electronic and magnetic properties of Cr-doped AlN/GaN (0001) heterostructures reveal that Cr segregates into the GaN region, that these interfaces retain their important half-metallic character and thus yield efficient (100 %) spin polarized injection from a ferromagnetic GaN:Cr electrode through an AlN tunnel barrier - whose height and width can be controlled by adjusting the Al concentration in the graded bandgap engineered Al(1-x)Ga(x)N (0001) layers. △ Less

Submitted 18 October, 2004; originally announced October 2004.

Comments: submitted for publication

Journal ref: Phys. Rev. Lett. 94, 146602 (2005)

First-principles characterization of ferromagnetic Mn5Ge3 for spintronic applications

Authors: S. Picozzi, A. Continenza, A. J. Freeman

Abstract: In the active search for potentially promising candidates for spintronic applications, we focus on the intermetallic ferromagnetic Mn5Ge3 compound and perform accurate first-principles FLAPW calculations within density functional theory. Through a careful investigation of the bulk electronic and magnetic structure, our results for the total magnetization, atomic magnetic moments, metallic conduc… ▽ More In the active search for potentially promising candidates for spintronic applications, we focus on the intermetallic ferromagnetic Mn5Ge3 compound and perform accurate first-principles FLAPW calculations within density functional theory. Through a careful investigation of the bulk electronic and magnetic structure, our results for the total magnetization, atomic magnetic moments, metallic conducting character and hyperfine fields are found to be in good agreement with experiments, and are elucidated in terms of a hybridization mechanism and exchange interaction. In order to assess the potential of this compound for spin-injection purposes, we calculate Fermi velocities and degree of spin-polarization; our results predict a rather high spin-injection efficiency in the diffusive regime along the hexagonal c-axis. Magneto-optical properties, such as L_2,3 X-ray magnetic circular dichroism, are also reported and await comparison with experimental data. △ Less

Submitted 29 September, 2004; originally announced September 2004.

Comments: 10 pages with 6 figures, to appear in Phys. Rev. B

Electronic structure properties and BCS superconductivity in beta-pyrochlore oxides: KOs_2O_6

Authors: R. Saniz, J. E. Medvedeva, Lin-Hui Ye, T. Shishidou, A. J. Freeman

Abstract: We report a first-principles density-functional calculation of the electronic structure and properties of the recently discovered superconducting beta-pyrochlore oxide KOs_2O_6. We find that the electronic structure near the Fermi energy E_F is dominated by strongly hybridized Os-5d and O-2p states. A van Hove singularity very close to E_F leads to a relatively large density of states at E_F, an… ▽ More We report a first-principles density-functional calculation of the electronic structure and properties of the recently discovered superconducting beta-pyrochlore oxide KOs_2O_6. We find that the electronic structure near the Fermi energy E_F is dominated by strongly hybridized Os-5d and O-2p states. A van Hove singularity very close to E_F leads to a relatively large density of states at E_F, and the Fermi surface exhibits strong nesting along several directions. These features could provide the scattering processes leading to the observed anomalous temperature dependence of the resistivity and to the rather large specific heat mass enhancement we obtain from the calculated density of states and the observed specific heat coefficient. An estimate of T_c within the framework of the BCS theory of superconductivity taking into account the possible effects of spin fluctuations arising from nesting yields the experimental value. △ Less

Submitted 22 June, 2004; originally announced June 2004.

Comments: 5 pages, 4 figures; submitted for publication

Combining high conductivity with complete optical transparency: A band-structure approach

Authors: J. E. Medvedeva, A. J. Freeman

Abstract: A comparison of the structural, optical and electronic properties of the recently discovered transparent conducting oxide (TCO), nanoporous Ca12Al14O33, with those of the conventional TCO's (such as Sc-doped CdO) indicates that this material belongs conceptually to a new class of transparent conductors. For this class of materials, we formulate criteria for the successful combination of high ele… ▽ More A comparison of the structural, optical and electronic properties of the recently discovered transparent conducting oxide (TCO), nanoporous Ca12Al14O33, with those of the conventional TCO's (such as Sc-doped CdO) indicates that this material belongs conceptually to a new class of transparent conductors. For this class of materials, we formulate criteria for the successful combination of high electrical conductivity with complete transparency in the visible range. Our analysis suggests that this set of requirements can be met for a group of novel materials called electrides. △ Less

Submitted 14 May, 2004; originally announced May 2004.

Comments: 3 pages, 3 figures, submitted for publication

Journal ref: Europhysics Letters, 69, 583 (2005)

Hopping versus bulk conductivity in transparent oxides: 12CaO.7Al2O3

Authors: J. E. Medvedeva, A. J. Freeman

Abstract: First-principles calculations of the mayenite-based oxide, [Ca12Al14O32]{2+}(2e-), reveal the mechanism responsible for its high conductivity. A detailed comparison of the electronic and optical properties of this material with those of the recently discovered novel transparent conducting oxide, H-doped UV-activated Ca12Al14O33, allowed us to conclude that the enhanced conductivity in [Ca12Al14O… ▽ More First-principles calculations of the mayenite-based oxide, [Ca12Al14O32]{2+}(2e-), reveal the mechanism responsible for its high conductivity. A detailed comparison of the electronic and optical properties of this material with those of the recently discovered novel transparent conducting oxide, H-doped UV-activated Ca12Al14O33, allowed us to conclude that the enhanced conductivity in [Ca12Al14O32]{2+}(2e-) is achieved by elimination of the Coulomb blocade of the charge carriers. This results in a transition from variable range hopping behavior with a Coulomb gap in H-doped UV-irradiated Ca12Al14O33 to bulk conductivity in [Ca12Al14O32]{2+}(2e-). Further, the high degree of the delocalization of the conduction electrons obtained in [Ca12Al14O32]{2+}(2e-) indicate that it cannot be classified as an electride, originally suggested. △ Less

Submitted 7 April, 2004; originally announced April 2004.

Comments: submitted

Journal ref: Appl. Phys. Lett. v.85, p.955 (2004).

Electronic structure and light-induced conductivity in a transparent refractory oxide

Authors: J. E. Medvedeva, A. J. Freeman, M. I. Bertoni, T. O. Mason

Abstract: Combined first-principles and experimental investigations reveal the underlying mechanism responsible for a drastic change of the conductivity (by 10 orders of magnitude) following hydrogen annealing and UV-irradiation in a transparent oxide, 12CaO.7Al2O3, found by Hayashi et al. The charge transport associated with photo-excitation of an electron from H, occurs by electron hopping. We identify… ▽ More Combined first-principles and experimental investigations reveal the underlying mechanism responsible for a drastic change of the conductivity (by 10 orders of magnitude) following hydrogen annealing and UV-irradiation in a transparent oxide, 12CaO.7Al2O3, found by Hayashi et al. The charge transport associated with photo-excitation of an electron from H, occurs by electron hopping. We identify the atoms participating in the hops, determine the exact paths for the carrier migration, estimate the temperature behavior of the hopping transport and predict a way to enhance the conductivity by specific doping. △ Less

Submitted 9 February, 2004; originally announced February 2004.

Comments: 4 pages including 4 figures

Journal ref: Phys. Rev. Lett. v. 93, p.016408 (2004).

Canted ferromagnetism in RuSr$_2$GdCu$_2$O$_8$

Authors: K. Nakamura, A. J. Freeman

Abstract: First principles calculations using the full-potential linearized augmented plane wave (FLAPW) method including intra-atomic noncollinear magnetism have been performed to determine the magnetic structures of RuSr$_{2}$GdCu$_{2}$O$_{8}$. The magnetism clearly arises from the RuO$_{6}$ octahedra where the moments on neighboring Ru sites order antiferromagnetically but cant perpendicular to the AFM… ▽ More First principles calculations using the full-potential linearized augmented plane wave (FLAPW) method including intra-atomic noncollinear magnetism have been performed to determine the magnetic structures of RuSr$_{2}$GdCu$_{2}$O$_{8}$. The magnetism clearly arises from the RuO$_{6}$ octahedra where the moments on neighboring Ru sites order antiferromagnetically but cant perpendicular to the AFM axis - and so induce a weak ferromagnetism. The projected Ru moments along the AFM and FM axes result in magnetic moments of 1.16 and 0.99 $μ_{B}$ respectively. The results are consistent with the possible coexistence of canted ferromagnetism and superconductivity in the RuSr$_{2}$GdCu$_{2}$O$_{8}$ - inferred from experiments. △ Less

Submitted 9 September, 2002; originally announced September 2002.

Comments: 4pages, 3 figures

Accurate first principles detailed balance determination of Auger recombination and impact ionization rates in semiconductors

Authors: S. Picozzi, R. Asahi, C. B. Geller, A. J. Freeman

Abstract: The technologically important problem of predicting Auger recombination lifetimes in semiconductors is addressed by means of a fully first--principles formalism. The calculations employ highly precise energy bands and wave functions provided by the full--potential linearized augmented plane wave (FLAPW) code based on the screened exchange local density approximation. The minority carrier Auger l… ▽ More The technologically important problem of predicting Auger recombination lifetimes in semiconductors is addressed by means of a fully first--principles formalism. The calculations employ highly precise energy bands and wave functions provided by the full--potential linearized augmented plane wave (FLAPW) code based on the screened exchange local density approximation. The minority carrier Auger lifetime is determined by two closely related approaches: \emph{i}) a direct evaluation of the Auger rates within Fermi's Golden Rule, and \emph{ii}) an indirect evaluation, based on a detailed balance formulation combining Auger recombination and its inverse process, impact ionization, in a unified framework. Calculated carrier lifetimes determined with the direct and indirect methods show excellent consistency \emph{i}) between them for $n$-doped GaAs and \emph{ii}%) with measured values for GaAs and InGaAs. This demonstrates the validity and accuracy of the computational formalism for the Auger lifetime and indicates a new sensitive tool for possible use in materials performance optimization. △ Less

Submitted 30 August, 2002; originally announced September 2002.

Comments: Phys. Rev. Lett. accepted

Large anisotropy in the optical conductivity of YNi2B2C

Authors: S. J. Youn, B. I. Min, A. J. Freeman

Abstract: The optical properties of YNi$_2$B$_2$C are studied by using the first-principles full-potential linearized augmented plane wave (FLAPW) method within the local density approximation. Anisotropic behavior is obtained in the optical conductivity, even though the electronic structure shows 3D character. A large peak in $σ_z$ is obtained at 2.4 eV. The anisotropic optical properties are analyzed in… ▽ More The optical properties of YNi$_2$B$_2$C are studied by using the first-principles full-potential linearized augmented plane wave (FLAPW) method within the local density approximation. Anisotropic behavior is obtained in the optical conductivity, even though the electronic structure shows 3D character. A large peak in $σ_z$ is obtained at 2.4 eV. The anisotropic optical properties are analyzed in terms of interband transitions between energy levels and found that the Ni site plays an important role. The electronic energy loss spectroscopy (EELS) spectra are also calculated to help elucidate the anisotropic properties in this system. △ Less

Submitted 4 July, 2002; originally announced July 2002.

Comments: revtex4, 4 pages, 5 figures, to appear in PRB

Orbital Ordering in Paramagnetic LaMnO3 and KCuF3

Authors: J. E. Medvedeva, M. A. Korotin, V. I. Anisimov, A. J. Freeman

Abstract: {\it Ab-initio} studies of the stability of orbital ordering, its coupling to magnetic structure and its possible origins (electron-phonon and/or electron-electron interactions) are reported for two perovskite systems, LaMnO$_3$ and KCuF$_3$. We present a new Average Spin State (ASS) calculational scheme that allowed us to treat a paramagnetic state. Using this scheme, we succesfully described t… ▽ More {\it Ab-initio} studies of the stability of orbital ordering, its coupling to magnetic structure and its possible origins (electron-phonon and/or electron-electron interactions) are reported for two perovskite systems, LaMnO$_3$ and KCuF$_3$. We present a new Average Spin State (ASS) calculational scheme that allowed us to treat a paramagnetic state. Using this scheme, we succesfully described the experimental magnetic/orbital phase diagram of both LaMnO$_3$ and KCuF$_3$ in crystal structures when the Jahn-Teller distortions are neglected. Hence, we conclude that the orbital ordering in both compounds is purely electronic in origin. △ Less

Submitted 15 March, 2002; v1 submitted 21 December, 2001; originally announced December 2001.

Comments: 10 pages, 5 figures

Journal ref: Phys. Rev. B, vol.65, p.172413-4 (2002)

Impact ionization in GaAs: a screened exchange density functional approach

Authors: S. Picozzi, R. Asahi, C. B. Geller, A. Continenza, A. J. Freeman

Abstract: Results are presented of a fully ab-initio calculation of impact ionization rates in GaAs within the density functional theory framework, using a screened-exchange formalism and the highly precise all-electron full-potential linearized augmented plane wave (FLAPW) method. The calculated impact ionization rates show a marked orientation dependence in {\bf k} space, indicating the strong restricti… ▽ More Results are presented of a fully ab-initio calculation of impact ionization rates in GaAs within the density functional theory framework, using a screened-exchange formalism and the highly precise all-electron full-potential linearized augmented plane wave (FLAPW) method. The calculated impact ionization rates show a marked orientation dependence in {\bf k} space, indicating the strong restrictions imposed by the conservation of energy and momentum. This anisotropy diminishes as the impacting electron energy increases. A Keldysh type fit performed on the energy-dependent rate shows a rather soft edge and a threshold energy greater than the direct band gap. The consistency with available Monte Carlo and empirical pseudopotential calculations shows the reliability of our approach and paves the way to ab-initio calculations of pair production rates in new and more complex materials. △ Less

Submitted 24 August, 2001; originally announced August 2001.

Comments: 11 pages, 4 figures, Submitted to Phys. Rev. B

Role of structural relaxations, chemical substitutions and polarization fields on the potential line-up in [0001] wurtzite GaN/Al systems

Authors: S. Picozzi, G. Profeta, A. Continenza, S. Massidda, A. J. Freeman

Abstract: First-principles full-potential linearized augmented plane wave (FLAPW) calculations are performed to clarify the role of the interface geometry on piezoelectric fields and on potential line-ups at the [0001]-wurtzite and [111]-zincblende GaN/Al junctions. The electric fields (polarity and magnitude) are found to be strongly affected by atomic relaxations in the interface region. A procedure is… ▽ More First-principles full-potential linearized augmented plane wave (FLAPW) calculations are performed to clarify the role of the interface geometry on piezoelectric fields and on potential line-ups at the [0001]-wurtzite and [111]-zincblende GaN/Al junctions. The electric fields (polarity and magnitude) are found to be strongly affected by atomic relaxations in the interface region. A procedure is tested to evaluate the Schottky barrier in the presence of electric fields and used to show that their effect is quite small (a few tenths of an eV). These calculations assess the rectifying behaviour of the GaN/Al contact, giving very good agreement with experimental values for the barrier. Stimulated by the complexity of the problem, we disentangle chemical and structural effects on the relevant properties (such as the potential discontinuity and electric fields) by studying auxiliary unrelaxed nitride/metal systems. Focusing on simple electronegativity arguments, we outline the leading mechanisms that result in the final values of the electric fields and Schottky barriers in these ideal interfaces. Finally, the transitivity rule in the presence of two inequivalent junctions is proved to give reliable results. △ Less

Submitted 19 June, 2001; originally announced June 2001.

Comments: Latex-file, 7 figures, submitted to Phys.Rev.B

Electric field gradients in s-, p- and d-metal diborides and the effect of pressure on the band structure and T$_c$ in MgB$_2$

Authors: N. I. Medvedeva, A. L. Ivanovskii, J. E. Medvedeva, A. J. Freeman, D. L. Novikov

Abstract: Results of FLMTO-GGA (full-potential linear muffin-tin orbital -- generalized gradient approximation) calculations of the band structure and boron electric field gradients (EFG) for the new medium-T$_c$ superconductor (MTSC), MgB$_2$, and related diborides MB$_2$, M=Be, Al, Sc, Ti, V, Cr, Mo and Ta are reported. The boron EFG variations are found to be related to specific features of their band… ▽ More Results of FLMTO-GGA (full-potential linear muffin-tin orbital -- generalized gradient approximation) calculations of the band structure and boron electric field gradients (EFG) for the new medium-T$_c$ superconductor (MTSC), MgB$_2$, and related diborides MB$_2$, M=Be, Al, Sc, Ti, V, Cr, Mo and Ta are reported. The boron EFG variations are found to be related to specific features of their band structure and particularly to the M-B hybridization. The strong charge anisotropy at the B site in MgB$_2$ is completely defined by the valence electrons - a property which sets MgB$_2$ apart from other diborides. The boron EFG in MgB$_2$ is weakly dependent of applied pressure: the B p electron anisotropy increases with pressure, but it is partly compensated by the increase of core charge assymetry. The concentration of holes in bonding $σ$ bands is found to decrease slightly from 0.067 to 0.062 holes/B under a pressure of 10 GPa. Despite a small decrease of N(E$_F$), the Hopfield parameter increases with pressure and we believe that the main reason for the reduction under pressure of the superconducting transition temperature, T$_c$, is the strong pressure dependence of phonon frequencies, which is sufficient to compensate the electronic effects. △ Less

Submitted 6 November, 2001; v1 submitted 18 April, 2001; originally announced April 2001.

Comments: 12 pages, 3 figures

Journal ref: Phys.Rev.B, vol. 65, p.052501 (2002)

Coulomb correlation and magnetic ordering in double-layered manganites: LaSr$_2$Mn$_2$O$_7$

Authors: Julia E. Medvedeva, Vladimir I. Anisimov, Michael A. Korotin, Oleg N. Mryasov, Arthur J. Freeman

Abstract: A detailed study of the electronic structure and magnetic configurations of the 50 % hole-doped double layered manganite LaSr$_2$Mn$_2$O$_7$ is presented. We demonstrate that the on-site Coulomb correlation (U) of Mn d electrons {\it (i)} significantly modifies the electronic structure, magnetic ordering (from FM to AFM), and interlayer exchange interactions, and {\it (ii)} promotes strong aniso… ▽ More A detailed study of the electronic structure and magnetic configurations of the 50 % hole-doped double layered manganite LaSr$_2$Mn$_2$O$_7$ is presented. We demonstrate that the on-site Coulomb correlation (U) of Mn d electrons {\it (i)} significantly modifies the electronic structure, magnetic ordering (from FM to AFM), and interlayer exchange interactions, and {\it (ii)} promotes strong anisotropy in electrical transport, reducing the effective hopping parameter along the {\it c} axis for electrically active $e_g$ electrons. This findng is consistent with observations of anisotropic transport -- a property which sets this manganite apart from conventional 3D systems. A half-metallic band structure is predicted with both the LSDA and LSDA+U methods. The experimentally observed A-type AFM ordering in LaSr$_2$Mn$_2$O$_7$ is found to be energetically more favorable with U $\geq$ 7 eV. A simple interpretation of interlayer exchange coupling is given within double and super-exchange mechanisms based on the dependencies on U of the effective exchange parameters and $e_g$ state sub-band widths. △ Less

Submitted 17 April, 2001; originally announced April 2001.

Comments: 10 pages, 5 figures

Journal ref: J.Magn.Magn.Mater., vol. 237, pp.47-54 (2001)

Electronic structure of superconducting MgB2 and related binary and ternary borides

Authors: N. I. Medvedeva, A. L. Ivanovskii, J. E. Medvedeva, A. J. Freeman

Abstract: First principles FLMTO-GGA electronic structure calculations of the new medium-$T_C$ superconductor (MTSC) $MgB_2$ and related diborides indicate that superconductivity in these compounds is related to the the existence of $p_{x,y}$-band holes at the $Γ$ point. Based on these calculations, we explain the absence of medium-$T_C$ superconductivity for $BeB_2$, $AlB_2$ $ScB_2$ and $YB_2$. The simul… ▽ More First principles FLMTO-GGA electronic structure calculations of the new medium-$T_C$ superconductor (MTSC) $MgB_2$ and related diborides indicate that superconductivity in these compounds is related to the the existence of $p_{x,y}$-band holes at the $Γ$ point. Based on these calculations, we explain the absence of medium-$T_C$ superconductivity for $BeB_2$, $AlB_2$ $ScB_2$ and $YB_2$. The simulation of a number of $MgB_2$-based ternary systems using a supercell approach demonstrates that (i) the electron doping of $MgB_2$ (i.e., $MgB_{2-y}X_y$ with X=Be, C, N, O) and the creation of isoelectronic defects in the boron sublattice (nonstoichiometric $MgB_{y<2}$) are not favorable for superconductivity, and (ii) a possible way of searching for similar MTSC should be via hole doping of $MgB_2$ (i.e., $Mg_{1-x}M_xB_2$ with M=Be, Ca, Li, Na, Cu, Zn) or $CaB_2$ or via creating layered superstructures of the $MgB_2/CaB_2$ type. A recent report of superconductivity in Cu doped $MgB_2$ supports this view. △ Less

Submitted 7 March, 2001; originally announced March 2001.

Comments: 12 pages, 4 figures

Journal ref: Physical Review B, v.64, p.20502 (Rapid), 2001

Coordination and chemical effects on the structural, electronic and magnetic properties in Mn pnictides

Authors: A. Continenza, S. Picozzi, W. T. Geng, A. J. Freeman

Abstract: Simple structures of MnX binary compounds, namely hexagonal NiAs and zincblende, are studied as a function of the anion (X = Sb, As, P) by means of the all-electron FLAPW method within local spin density and generalized gradient approximations. An accurate analysis of the structural, electronic and magnetic properties reveals that the cubic structure greatly favours the magnetic alignment in the… ▽ More Simple structures of MnX binary compounds, namely hexagonal NiAs and zincblende, are studied as a function of the anion (X = Sb, As, P) by means of the all-electron FLAPW method within local spin density and generalized gradient approximations. An accurate analysis of the structural, electronic and magnetic properties reveals that the cubic structure greatly favours the magnetic alignment in these compounds leading to high magnetic moments and nearly half-metallic behaviour for MnSb and MnAs. The effect of the anion chemical species is related to both its size and the possible hybridization with the Mn $d$ states; both contributions are seen to hinder the magnitude of the magnetic moment for small and light anions. Our results are in very good agreement with experiment - where available - and show that the generalized gradient approximation is essential to correctly recover both the equilibrium volume and magnetic moment. △ Less

Submitted 21 February, 2001; originally announced February 2001.

Comments: 18 pages and 4 figures, Latex-file, submitted to Phys.Rev.B

Energetics and bonding properties of the Ni/$β$-SiC (001) interface: an ab-initio study

Authors: G. Profeta, A. Continenza, A. J. Freeman

Abstract: We investigate the adsorption of a Ni monolayer on the $β$-SiC(001) surface by means of highly precise first-principles all-electron FLAPW calculations. Total energy calculations for the Si- and C-terminated surfaces reveal high Ni-SiC adsorption energies, with respect to other metals, confirmining the strong reactivity and the stability of the transition metal/SiC interface. These high bindin… ▽ More We investigate the adsorption of a Ni monolayer on the $β$-SiC(001) surface by means of highly precise first-principles all-electron FLAPW calculations. Total energy calculations for the Si- and C-terminated surfaces reveal high Ni-SiC adsorption energies, with respect to other metals, confirmining the strong reactivity and the stability of the transition metal/SiC interface. These high binding energies, about 7.3-7.4 eV, are shown to be related to strong $p$-$d$ hybridization, common to both surface terminations and different adsorption sites and despite the large mismatch, can stabilize overlayer growth. A detailed analysis of the bonding mechanism, hybridization of the surface states, charge transfer and surface core level shifts reveals the strong covalent character of the bonding. After a proper accounting of the Madelung term, the core level shift is shown to follow the charge transfer trend. △ Less

Submitted 21 February, 2001; originally announced February 2001.

Comments: 11 pages and 6 figures, Latex-file, submitted to Phys.Rev.B

Magnetic and electronic structures of superconducting RuSr$_2$GdCu$_2$O$_8$

Authors: K. Nakamura, K. T. Park, A. J. Freeman, J. D. Jorgensen

Abstract: The coexistence of ferromagnetism and superconductivity in RuSr$_2$GdCu$_2$O$_8$ was reported both from experiments (by Tallon et. al.) and first-principles calculations (by Pickett et. al.). Here we report that our first-principles full-potential linearized augmented plane wave (FLAPW) calculations, employing the precise crystal structure with structural distortions (i.e., RuO$_6$ rotations) de… ▽ More The coexistence of ferromagnetism and superconductivity in RuSr$_2$GdCu$_2$O$_8$ was reported both from experiments (by Tallon et. al.) and first-principles calculations (by Pickett et. al.). Here we report that our first-principles full-potential linearized augmented plane wave (FLAPW) calculations, employing the precise crystal structure with structural distortions (i.e., RuO$_6$ rotations) determined by neutron diffraction, demonstrate that antiferromagnetic ordering of the Ru moments is energetically favored over the previously proposed ferromagnetic ordering. Our results are consistent with recently performed magnetic neutron diffraction experiments (Lynn et. al). Ru $t_{2g}$ states, which are responsible for the magnetism, have only a very small interaction with Cu $e_g$ states, which results in a small exchange splitting of these states. The Fermi surface, characterized by strongly hybridized $dpσ$ orbitals, has nesting features similar to those in the two-dimensional high $T_c$ cuprate superconductors. △ Less

Submitted 17 October, 2000; originally announced October 2000.

Comments: 6 pages,6 figures, accepted for publication in Phys. Rev. B

New features of dislocation structures arising from lattice discreteness

Authors: Oleg N. Mryasov, Yu. N. Gornostyrev, A. J. Freeman

Abstract: New aspects of a relation between lattice and dislocation structures are examined within a physically transparent theoretical scheme. Predicted features originating from the lattice discreteness include: (i) multiple core dislocation structures and (ii) their dependence on the position of the dislocation axis. These effects, which in principle can be observed directly and may also manifest thems… ▽ More New aspects of a relation between lattice and dislocation structures are examined within a physically transparent theoretical scheme. Predicted features originating from the lattice discreteness include: (i) multiple core dislocation structures and (ii) their dependence on the position of the dislocation axis. These effects, which in principle can be observed directly and may also manifest themselves in dislocation motion or/and transformation (cross-slip) characteristics, are very general and present in any crystal in which they may be more or less pronounced depending on the material. △ Less

Submitted 15 June, 2000; originally announced June 2000.

Comments: 4 pages and 5 figures

Metal induced gap states and Schottky barrier heights at non-reactive GaN/noble metal interfaces

Authors: S. Picozzi, A. Continenza, G. Satta, S. Massidda, A. J. Freeman

Abstract: We present ab-initio local density FLAPW calculations on non-reactive N-terminated [001] ordered GaN/Ag and GaN/Au interfaces and compare the results (such as metal induced gap states and Schottky barrier heights) with those obtained for GaN/Al, in order to understand the dependence of the relevant electronic properties on the deposited metal. Our results show that the density of gap states is a… ▽ More We present ab-initio local density FLAPW calculations on non-reactive N-terminated [001] ordered GaN/Ag and GaN/Au interfaces and compare the results (such as metal induced gap states and Schottky barrier heights) with those obtained for GaN/Al, in order to understand the dependence of the relevant electronic properties on the deposited metal. Our results show that the density of gap states is appreciable only in the first semiconductor layer close to the interface. The decay length of the gap states in the semiconductor side is about 2.0 $\pm$ 0.1 Å$\:$ and is independent of the deposited metal, therefore being to a good extent a bulk property of GaN. Our calculated values of the Schottky barrier heights are $Φ_{B_p}(GaN/Ag)$ = 0.87 eV and $Φ_{B_p}(GaN/Au)$ = 1.08 eV; both values are smaller than the GaN/Al value ($Φ_{B_p}(GaN/Al)$ = 1.51 eV) and this quite large spread of values excludes the possibility of a Fermi level pinning within the GaN band gap. Because of the low screening in GaN, the potential barrier at the junction is strongly affected by the structural arrangement of the first metal layer at the interface. This leads to quite large variations of the Schottky barrier height as a function of the metal, in contrast with the behavior of GaAs/metal interfaces. △ Less

Submitted 23 February, 2000; originally announced February 2000.

Comments: 18 pages; 6 postscript figures, submitted to Phys. Rev. B

Magnetoelastic mechanism of spin-reorientation transitions at step-edges

Authors: A. B. Shick, Yu. N. Gornostyrev, A. J. Freeman

Abstract: The symmetry-induced magnetic anisotropy due to monoatomic steps at strained Ni films is determined using results of first - principles relativistic full-potential linearized augmented plane wave (FLAPW) calculations and an analogy with the Néel model. We show that there is a magnetoelastic anisotropy contribution to the uniaxial magnetic anisotropy energy in the vicinal plane of a stepped surfa… ▽ More The symmetry-induced magnetic anisotropy due to monoatomic steps at strained Ni films is determined using results of first - principles relativistic full-potential linearized augmented plane wave (FLAPW) calculations and an analogy with the Néel model. We show that there is a magnetoelastic anisotropy contribution to the uniaxial magnetic anisotropy energy in the vicinal plane of a stepped surface. In addition to the known spin-direction reorientation transition at a flat Ni/Cu(001) surface, we propose a spin-direction reorientation transition in the vicinal plane for a stepped Ni/Cu surface due to the magnetoelastic anisotropy. We show that with an increase of Ni film thickness, the magnetization in the vicinal plane turns perpendicular to the step edge at a critical thickness calculated to be in the range of 16-24 Ni layers for the Ni/Cu(1,1,13) stepped surface. △ Less

Submitted 31 May, 1999; originally announced May 1999.

Comments: Accepted for publication in Phys. Rev. B

Generalized stacking fault energetics and dislocation properties: compact vs. spread unit dislocation structures in TiAl and CuAu

Authors: Oleg N. Mryasov, Yu. N. Gornostyrev, A. J. Freeman

Abstract: We present a general scheme for analyzing the structure and mobility of dislocations based on solutions of the Peierls-Nabarro model with a two component displacement field and restoring forces determined from the ab-initio generalized stacking fault energetics (ie., the so-called $γ$-surface). The approach is used to investigate dislocations in L1$_{0}$ TiAl and CuAu; predicted differences in t… ▽ More We present a general scheme for analyzing the structure and mobility of dislocations based on solutions of the Peierls-Nabarro model with a two component displacement field and restoring forces determined from the ab-initio generalized stacking fault energetics (ie., the so-called $γ$-surface). The approach is used to investigate dislocations in L1$_{0}$ TiAl and CuAu; predicted differences in the unit dislocation properties are explicitly related with features of the $γ$-surface geometry. A unified description of compact, spread and split dislocation cores is provided with an important characteristic "dissociation path" revealed by this highly tractable scheme. △ Less

Submitted 9 September, 1998; originally announced September 1998.

Comments: 7 two columns pages, 2 eps figures. Phys. Rev. B. accepted November 1998

Influence of the exchange reaction on the electronic structure of GaN/Al junctions

Authors: S. Picozzi, A. Continenza, S. Massidda, A. J. Freeman, N. Newman

Abstract: Ab-initio calculations have been used to study the influence of the interface morphology and, notably, of the exchange reaction on the electronic properties of Al/GaN (100) interfaces. In particular, the effects of interface structure (i.e. interfacial bond lengths, semiconductor surface polarity, and reacted intralayers) on the SBH at the Al/GaN (001) junction are specifically addressed. The el… ▽ More Ab-initio calculations have been used to study the influence of the interface morphology and, notably, of the exchange reaction on the electronic properties of Al/GaN (100) interfaces. In particular, the effects of interface structure (i.e. interfacial bond lengths, semiconductor surface polarity, and reacted intralayers) on the SBH at the Al/GaN (001) junction are specifically addressed. The electronic structure of the following atomic configurations have been investigated theoretically: (i) an abrupt, relaxed GaN/Al interface; (ii) an interface which has undergone one monolayer of exchange reaction; and interfaces with a monolayer-thick interlayer of (iii) AlN and (iv) Ga$_{0.5}$Al$_{0.5}$N. Intermixed interfaces are found to pin the interface Fermi level at a position not significantly different from that of an abrupt interface. Our calculations also show that the interface band line--up is not strongly dependent on the interface morphology changes studied. The p-type SBH is reduced by less than 0.1 eV if the GaN surface is Ga-terminated compared to the N-terminated one. Moreover, we show that both an ultrathin Ga$_x$Al$_{1-x}$N ($x$ = 0, 0.5) intralayer and a Ga$\leftrightarrow$Al atomic swap at the interface does not significantly affect the Schottky barrier height. △ Less

Submitted 9 July, 1998; v1 submitted 30 June, 1998; originally announced June 1998.

Comments: Latex-file, 3 figures. to appear on Phys.Rev.B

Electric fields and valence band offsets at strained [111] heterojunctions

Authors: S. Picozzi, A. Continenza, A. J. Freeman

Abstract: [111] ordered common atom strained layer superlattices (in particular the common anion GaSb/InSb system and the common cation InAs/InSb system) are investigated using the ab initio full potential linearized augmented plane wave (FLAPW) method. We have focused our attention on the potential line-up at the two sides of the homopolar isovalent heterojunctions considered, and in particular on its de… ▽ More [111] ordered common atom strained layer superlattices (in particular the common anion GaSb/InSb system and the common cation InAs/InSb system) are investigated using the ab initio full potential linearized augmented plane wave (FLAPW) method. We have focused our attention on the potential line-up at the two sides of the homopolar isovalent heterojunctions considered, and in particular on its dependence on the strain conditions and on the strain induced electric fields. We propose a procedure to locate the interface plane where the band alignment could be evaluated; furthermore, we suggest that the polarization charges, due to piezoelectric effects, are approximately confined to a narrow region close to the interface and do not affect the potential discontinuity. We find that the interface contribution to the valence band offset is substantially unaffected by strain conditions, whereas the total band line-up is highly tunable, as a function of the strain conditions. Finally, we compare our results with those obtained for [001] heterojunctions. △ Less

Submitted 3 February, 1997; originally announced February 1997.

Comments: 18 pages, Latex-file, to appear in Phys.Rev.B

Influence of growth direction and strain conditions on the band line-up at GaSb/InSb and InAs/InSb interfaces

Authors: S. Picozzi, A. Continenza, A. J. Freeman

Abstract: First-principles full potential linearized augmented plane wave (FLAPW) calculations have been performed for lattice-mismatched common-atom III-V interfaces. In particular, we have examined the effects of epitaxial strain and ordering direction on the valence band offset in [001] and [111] GaSb/InSb and InAs/InSb superlattices, and found that the valence band maximum is always higher at the InSb… ▽ More First-principles full potential linearized augmented plane wave (FLAPW) calculations have been performed for lattice-mismatched common-atom III-V interfaces. In particular, we have examined the effects of epitaxial strain and ordering direction on the valence band offset in [001] and [111] GaSb/InSb and InAs/InSb superlattices, and found that the valence band maximum is always higher at the InSb side of the heterojunction, except for the common-anion system grown on an InSb substrate. The comparison between equivalent structures having the same substrate lattice constant, but different growth axis, shows that for comparable strain conditions, the ordering direction slightly influences the band line-up, due to small differences of the charge readjustment at the [001] and [111] interfaces. On the other hand, strain is shown to strongly affect the VBO; in particular, as the pseudomorphic growth conditions are varied, the bulk contribution to the band line-up changes markedly, whereas the interface term is almost constant. On the whole, our calculations yield a band line-up that decreases linearly as the substrate lattice constant is increased, showing its high tunability as a function of different pseudomorphic growth conditions. Finally, the band line-up at the lattice matched InAs/GaSb interface determined using the transitivity rule gave perfect agreement between predicted and experimental results. △ Less

Submitted 31 January, 1997; originally announced February 1997.

Comments: 15 pages, Latex-file

Journal ref: Phys.Rev.B 53 (1996),10852-10857

Effects of epitaxial strain and ordering direction on the electronic properties of (GaSb)_1/(InSb)_1 and (InAs)_1/(InSb)_1 superlattices

Authors: S. Picozzi, A. Continenza, A. J. Freeman

Abstract: The structural and electronic properties in common anion (GaSb)_1/(InSb)_1 and common cation (InAs)_1/(InSb)_1 [111] ordered superlattices have been determined using the local density total energy full potential linearized augmented plane wave method. The influence of the ordering direction, strain conditions and atomic substitution on the electronic properties of technological and experimental… ▽ More The structural and electronic properties in common anion (GaSb)_1/(InSb)_1 and common cation (InAs)_1/(InSb)_1 [111] ordered superlattices have been determined using the local density total energy full potential linearized augmented plane wave method. The influence of the ordering direction, strain conditions and atomic substitution on the electronic properties of technological and experimental interest (such as energy band-gaps and charge carrier localization in the different sublattices) were determined. The results show an appreciable energy band-gap narrowing compared to the band-gap averaged over the constituent binaries, either in [001] ordered structures or (more markedly) in the [111] systems; moreover energy band-gaps show an increasing trend as the substrate lattice parameter is decreased. Finally, the systems examined offer interesting opportunities for band-gap tuning as a function of the growth condition (about 0.7 eV in (GaSb)_1/(InSb)_1 and 0.3 eV in (InAs)_1/(InSb)_1). △ Less

Submitted 30 January, 1997; originally announced January 1997.

Comments: 25 pages, Latex-file

Journal ref: Phys.Rev.B 52 (1995),5247-5255

Effect of Structure on the Electronic Density of States of Doped Lanthanum Cuprate

Authors: M. R. Norman, G. J. McMullan, D. L. Novikov, A. J. Freeman

Abstract: We present a series of detailed band calculations on the various structural phases of doped lanthanum cuprate: HTT, LTO, and LTT. The LTO distortion is shown to have little effect on the electronic density of states (DOS). A fit to the pressure dependence of the superconducting transition temperature indicates that only 2.5% of the DOS is affected by the HTT$\to$ LTO transition. The LTT distorti… ▽ More We present a series of detailed band calculations on the various structural phases of doped lanthanum cuprate: HTT, LTO, and LTT. The LTO distortion is shown to have little effect on the electronic density of states (DOS). A fit to the pressure dependence of the superconducting transition temperature indicates that only 2.5% of the DOS is affected by the HTT$\to$ LTO transition. The LTT distortion also has little effect on the DOS for the experimental value of the octahedral tilt angle. Larger tilt angles, though, lead to a dramatic change in the DOS. △ Less

Submitted 3 June, 1993; originally announced June 1993.

Comments: 9 pages, plain TeX plus macros, 4 figures available from the authors

Journal ref: Phys Rev B 48, 9935 (1993)