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Can TCOs Transform Cavity-QED?
Authors:
Wance Wang,
Dhruv Fomra,
Amit Agrawal,
Henri J. Lezec,
Joseph W. Britton
Abstract:
Transparent conductive oxides (TCO) enable confinement of charge-sensitive ions and Rydberg atoms proximal to dielectric structures including waveguides and photon detectors. However, optical loss precludes the use of TCOs within high-finesse optical micro-resonators. Here we characterize a ZnO-based TCO that markedly reduces optical absorption. At 1650\text{ nm} we observe a 22,000 finesse in a F…
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Transparent conductive oxides (TCO) enable confinement of charge-sensitive ions and Rydberg atoms proximal to dielectric structures including waveguides and photon detectors. However, optical loss precludes the use of TCOs within high-finesse optical micro-resonators. Here we characterize a ZnO-based TCO that markedly reduces optical absorption. At 1650\text{ nm} we observe a 22,000 finesse in a Fabry-Pérot optical cavity coated with a 30\text{ nm} ZnO layer. This is a 5000 times reduction relative to indium tin oxide (ITO) at this wavelength. The same ZnO film exhibits 0.01\text{ \ensuremathΩ\ensuremath{\cdot}cm} surface resistivity at DC. We anticipate a step change in cavity-QED systems incorporating ultra-low loss TCOs like ZnO.
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Submitted 3 June, 2025;
originally announced June 2025.
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A Space-Time Knife-Edge In Epsilon-Near-Zero Films for Ultrafast Pulse Characterization
Authors:
Adam Ball,
Ray Secondo,
Dhruv Fomra,
Jingwei Wu,
Samprity Saha,
Amit Agrawal,
Henri Lezec,
Nathaniel Kinsey
Abstract:
Epsilon-near-zero (ENZ) materials have shown strong refractive nonlinearities that can be fast in an absolute sense. While continuing to advance fundamental science, such as time varying interactions, the community is still searching for an application that can effectively make use of the strong index modulation offered. Here we combine the effect of strong space-time index modulation in ENZ mater…
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Epsilon-near-zero (ENZ) materials have shown strong refractive nonlinearities that can be fast in an absolute sense. While continuing to advance fundamental science, such as time varying interactions, the community is still searching for an application that can effectively make use of the strong index modulation offered. Here we combine the effect of strong space-time index modulation in ENZ materials with the beam deflection technique to introduce a new approach to optical pulse characterization that we term a space-time knife edge. We show that in this approach, we are able to extract temporal and spatial information of a Gaussian beam with only two time resolved measurements. The approach achieves this without phase-matching requirements (<1 micron thick film) and can achieve a high signal to noise ratio by combining the system with lock-in detection, facilitating the measurement of weak refractive index changes (delta_n ~ 10^-5) for low intensity beams. Thus, the space-time knife edge can offer a new avenue for ultrafast light measurement and demonstrates a use cases of ENZ materials. In support of this, we outline temporal dynamics for refractive index changes in non-colinear experiments opening avenues for better theoretical understanding of both the spatial and temporal dynamics of emerging ENZ films.
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Submitted 1 August, 2024;
originally announced August 2024.
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Gallium-doped Zinc Oxide: Nonlinear Reflection and Transmission Measurements and Modeling in the ENZ Region
Authors:
Adam Ball,
Ray Secondo,
Benjamin T. Diroll,
Dhruv Fomra,
Kai Ding,
Vitaly Avrutin,
Umit Ozgur,
Nathaniel Kinsey
Abstract:
Strong nonlinear materials have been sought after for decades for applications in telecommunications, sensing, and quantum optics. Gallium-doped zinc oxide is a II-VI transparent conducting oxide that shows promising nonlinearities similar to indium tin oxide and aluminum-doped zinc oxide for the telecommunications band. Here we explore its nonlinearities in the epsilon near zero (ENZ) region and…
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Strong nonlinear materials have been sought after for decades for applications in telecommunications, sensing, and quantum optics. Gallium-doped zinc oxide is a II-VI transparent conducting oxide that shows promising nonlinearities similar to indium tin oxide and aluminum-doped zinc oxide for the telecommunications band. Here we explore its nonlinearities in the epsilon near zero (ENZ) region and show n2,eff values on the order of 4.5x10-3 cm2GW-1 for IR pumping on 200-300 nm thin films. Measuring nonlinear changes in transmission and reflection with a white light source probe in the near-IR while exciting in the near-IR provides data in both time and wavelength. Three films varying in thickness, optical loss, and ENZ crossover wavelength are numerically modeled and compared to experimental data showing agreement for both dispersion and temporal relaxation. In addition, we discuss optimal excitation and probing wavelengths occur around ENZ for thick films but are red-shifted for thin films where our model provides an additional degree of freedom to explore. Obtaining accurate nonlinear measurements is a difficult and time-consuming task where our method in this paper provides experimental and modeled data to the community for an ENZ material of interest.
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Submitted 9 November, 2022; v1 submitted 8 November, 2022;
originally announced November 2022.
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Plasmonic Titanium Nitride via Atomic Layer Deposition: A Low-Temperature Route
Authors:
Dhruv Fomra,
Ray Secondo,
Kai Ding,
Vitaliy Avrutin,
Natalia Izyumskaya,
Ümit Özgür,
Nathaniel Kinsey
Abstract:
To integrate plasmonic devices into industry, it is essential to develop scalable and CMOS compatible plasmonic materials. In this work, we report high plasmonic quality titanium nitride (TiN) on c-plane sapphire by plasma enhanced atomic layer deposition (PE-ALD). TiN with low losses and high metallicity was achieved at temperatures below 500°C, by exploring the effects of chemisorption time, sub…
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To integrate plasmonic devices into industry, it is essential to develop scalable and CMOS compatible plasmonic materials. In this work, we report high plasmonic quality titanium nitride (TiN) on c-plane sapphire by plasma enhanced atomic layer deposition (PE-ALD). TiN with low losses and high metallicity was achieved at temperatures below 500°C, by exploring the effects of chemisorption time, substrate temperature and plasma exposure time on material properties. Reduction in chemisorption time mitigates premature precursor decomposition at T_S > 375°C , and a trade-off between reduced impurity concentration and structural degradation caused by plasma bombardment is achieved for 25s plasma exposure. 85 nm thick TiN films grown at a substrate temperature of 450°C, compatible with CMOS processes, with 0.5s chemisorption time and 25s plasma exposure exhibited a high plasmonic figure of merit (|ε^'/ε^''|) of 2.8 and resistivity of 31 μΩ-cm. These TiN thin films fabricated with subwavelength apertures were shown to exhibit extraordinary transmission.
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Submitted 14 October, 2019;
originally announced January 2020.
