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High-fidelity dispersive spin sensing in a tuneable unit cell of silicon MOS quantum dots
Authors:
Constance Lainé,
Giovanni A. Oakes,
Virginia Ciriano-Tejel,
Jacob F. Chittock-Wood,
Lorenzo Peri,
Michael A. Fogarty,
Sofia M. Patomäki,
Stefan Kubicek,
David F. Wise,
Ross C. C. Leon,
M. Fernando Gonzalez-Zalba,
John J. L. Morton
Abstract:
Metal-oxide-semiconductor (MOS) technology is a promising platform for developing quantum computers based on spin qubits. Scaling this approach will benefit from compact and sensitive sensors that minimize constraints on qubit connectivity while being industrially manufacturable. Here, we demonstrate a compact dispersive spin-qubit sensor, a single-electron box (SEB), within a bilinear unit cell o…
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Metal-oxide-semiconductor (MOS) technology is a promising platform for developing quantum computers based on spin qubits. Scaling this approach will benefit from compact and sensitive sensors that minimize constraints on qubit connectivity while being industrially manufacturable. Here, we demonstrate a compact dispersive spin-qubit sensor, a single-electron box (SEB), within a bilinear unit cell of planar MOS quantum dots (QDs) fabricated using an industrial grade 300 mm wafer process. By independent gate control of the SEB and double-quantum-dot tunnel rates, we optimize the sensor to achieve a readout fidelity of 99.92% in 340us (99% in 20us), fidelity values on a par with the best obtained with less compact sensors. Furthermore, we develop a Hidden Markov Model of the two-electron spin dynamics that enables a more accurate calculation of the measurement outcome and hence readout fidelity. Our results show how high-fidelity sensors can be introduced within silicon spin-qubit architectures while maintaining sufficient qubit connectivity as well as providing faster readout and more efficient initialisation schemes.
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Submitted 15 May, 2025;
originally announced May 2025.
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Intelligent Pooling: Proactive Resource Provisioning in Large-scale Cloud Service
Authors:
Deepak Ravikumar,
Alex Yeo,
Yiwen Zhu,
Aditya Lakra,
Harsha Nagulapalli,
Santhosh Kumar Ravindran,
Steve Suh,
Niharika Dutta,
Andrew Fogarty,
Yoonjae Park,
Sumeet Khushalani,
Arijit Tarafdar,
Kunal Parekh,
Subru Krishnan
Abstract:
The proliferation of big data and analytic workloads has driven the need for cloud compute and cluster-based job processing. With Apache Spark, users can process terabytes of data at ease with hundreds of parallel executors. At Microsoft, we aim at providing a fast and succinct interface for users to run Spark applications, such as through creating simple notebook "sessions" by abstracting the und…
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The proliferation of big data and analytic workloads has driven the need for cloud compute and cluster-based job processing. With Apache Spark, users can process terabytes of data at ease with hundreds of parallel executors. At Microsoft, we aim at providing a fast and succinct interface for users to run Spark applications, such as through creating simple notebook "sessions" by abstracting the underlying complexity of the cloud. Providing low latency access to Spark clusters and sessions is a challenging problem due to the large overheads of cluster creation and session startup. In this paper, we introduce Intelligent Pooling, a system for proactively provisioning compute resources to combat the aforementioned overheads. To reduce the COGS (cost-of-goods-sold), our system (1) predicts usage patterns using an innovative hybrid Machine Learning (ML) model with low latency and high accuracy; and (2) optimizes the pool size dynamically to meet customer demand while reducing extraneous COGS.
The proposed system auto-tunes its hyper-parameters to balance between performance and operational cost with minimal to no engineering input. Evaluated using large-scale production data, Intelligent Pooling achieves up to 43% reduction in cluster idle time compared to static pooling when targeting 99% pool hit rate. Currently deployed in production, Intelligent Pooling is on track to save tens of million dollars in COGS per year as compared to traditional pre-provisioned pools.
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Submitted 18 November, 2024;
originally announced November 2024.
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Radio-frequency cascade readout of coupled spin qubits fabricated using a 300~mm wafer process
Authors:
Jacob F. Chittock-Wood,
Ross C. C. Leon,
Michael A. Fogarty,
Tara Murphy,
Sofia M. Patomäki,
Giovanni A. Oakes,
James Williams,
Felix-Ekkehard von Horstig,
Nathan Johnson,
Julien Jussot,
Stefan Kubicek,
Bogdan Govoreanu,
David F. Wise,
M. Fernando Gonzalez-Zalba,
John J. L. Morton
Abstract:
Advanced semiconductor manufacturing offers a promising path to scaling up silicon-based quantum processors by improving yield, uniformity, and integration. Individual spin qubit control and readout have been demonstrated in quantum dots fabricated on 300 mm wafer metal-oxide-semiconductor (MOS) processes, yet quantum processors require two-qubit interactions to operate. Here, we use a 300 mm natu…
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Advanced semiconductor manufacturing offers a promising path to scaling up silicon-based quantum processors by improving yield, uniformity, and integration. Individual spin qubit control and readout have been demonstrated in quantum dots fabricated on 300 mm wafer metal-oxide-semiconductor (MOS) processes, yet quantum processors require two-qubit interactions to operate. Here, we use a 300 mm natural silicon MOS process customised for spin qubits and demonstrate coherent control of two electron spins using the exchange interaction, forming the basis for entangling gates such as $\sqrt{\text{SWAP}}$. We measure gate dephasing times of up to $T_2^{*}\approx500$ ns with a quality factor of 10. For readout, we introduce a novel dispersive readout technique, the radio-frequency electron cascade, that simplifies the qubit unit cell while providing high gain. This method achieves a signal-to-noise ratio of 6 within an integration time of 46 $μ$s, the highest-performing dispersive readout demonstration in a planar MOS process. The combination of sensitive dispersive readout with industrial-grade manufacturing marks a crucial step towards large-scale integration of silicon quantum processors.
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Submitted 13 May, 2025; v1 submitted 2 August, 2024;
originally announced August 2024.
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Towards Building Autonomous Data Services on Azure
Authors:
Yiwen Zhu,
Yuanyuan Tian,
Joyce Cahoon,
Subru Krishnan,
Ankita Agarwal,
Rana Alotaibi,
Jesús Camacho-Rodríguez,
Bibin Chundatt,
Andrew Chung,
Niharika Dutta,
Andrew Fogarty,
Anja Gruenheid,
Brandon Haynes,
Matteo Interlandi,
Minu Iyer,
Nick Jurgens,
Sumeet Khushalani,
Brian Kroth,
Manoj Kumar,
Jyoti Leeka,
Sergiy Matusevych,
Minni Mittal,
Andreas Mueller,
Kartheek Muthyala,
Harsha Nagulapalli
, et al. (13 additional authors not shown)
Abstract:
Modern cloud has turned data services into easily accessible commodities. With just a few clicks, users are now able to access a catalog of data processing systems for a wide range of tasks. However, the cloud brings in both complexity and opportunity. While cloud users can quickly start an application by using various data services, it can be difficult to configure and optimize these services to…
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Modern cloud has turned data services into easily accessible commodities. With just a few clicks, users are now able to access a catalog of data processing systems for a wide range of tasks. However, the cloud brings in both complexity and opportunity. While cloud users can quickly start an application by using various data services, it can be difficult to configure and optimize these services to gain the most value from them. For cloud providers, managing every aspect of an ever-increasing set of data services, while meeting customer SLAs and minimizing operational cost is becoming more challenging. Cloud technology enables the collection of significant amounts of workload traces and system telemetry. With the progress in data science (DS) and machine learning (ML), it is feasible and desirable to utilize a data-driven, ML-based approach to automate various aspects of data services, resulting in the creation of autonomous data services. This paper presents our perspectives and insights on creating autonomous data services on Azure. It also covers the future endeavors we plan to undertake and unresolved issues that still need attention.
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Submitted 2 May, 2024;
originally announced May 2024.
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Pipeline quantum processor architecture for silicon spin qubits
Authors:
S. M. Patomäki,
M. F. Gonzalez-Zalba,
M. A. Fogarty,
Z. Cai,
S. C. Benjamin,
J. J. L. Morton
Abstract:
Noisy intermediate-scale quantum (NISQ) devices seek to achieve quantum advantage over classical systems without the use of full quantum error correction. We propose a NISQ processor architecture using a qubit `pipeline' in which all run-time control is applied globally, reducing the required number and complexity of control and interconnect resources. This is achieved by progressing qubit states…
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Noisy intermediate-scale quantum (NISQ) devices seek to achieve quantum advantage over classical systems without the use of full quantum error correction. We propose a NISQ processor architecture using a qubit `pipeline' in which all run-time control is applied globally, reducing the required number and complexity of control and interconnect resources. This is achieved by progressing qubit states through a layered physical array of structures which realise single and two-qubit gates. Such an approach lends itself to NISQ applications such as variational quantum eigensolvers which require numerous repetitions of the same calculation, or small variations thereof. In exchange for simplifying run-time control, a larger number of physical structures is required for shuttling the qubits as the circuit depth now corresponds to an array of physical structures. However, qubit states can be `pipelined' densely through the arrays for repeated runs to make more efficient use of physical resources. We describe how the qubit pipeline can be implemented in a silicon spin-qubit platform, to which it is well suited to due to the high qubit density and scalability. In this implementation, we describe the physical realisation of single and two qubit gates which represent a universal gate set that can achieve fidelities of $\mathcal{F} \geq 0.9999$, even under typical qubit frequency variations.
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Submitted 13 June, 2023;
originally announced June 2023.
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An elongated quantum dot as a distributed charge sensor
Authors:
S. M. Patomäki,
J. Williams,
F. Berritta,
C. Laine,
M. A. Fogarty,
R. C. C. Leon,
J. Jussot,
S. Kubicek,
A. Chatterjee,
B. Govoreanu,
F. Kuemmeth,
J. J. L. Morton,
M. F. Gonzalez-Zalba
Abstract:
Increasing the separation between semiconductor quantum dots offers scaling advantages by fa- cilitating gate routing and the integration of sensors and charge reservoirs. Elongated quantum dots have been utilized for this purpose in GaAs heterostructures to extend the range of spin-spin interactions. Here, we study a metal-oxide-semiconductor (MOS) device where two quantum dot arrays are separate…
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Increasing the separation between semiconductor quantum dots offers scaling advantages by fa- cilitating gate routing and the integration of sensors and charge reservoirs. Elongated quantum dots have been utilized for this purpose in GaAs heterostructures to extend the range of spin-spin interactions. Here, we study a metal-oxide-semiconductor (MOS) device where two quantum dot arrays are separated by an elongated quantum dot (340 nm long, 50 nm wide). We monitor charge transitions of the elongated quantum dot by measuring radiofrequency single-electron currents to a reservoir to which we connect a lumped-element resonator. We operate the dot as a single electron box to achieve charge sensing of remote quantum dots in each array, separated by a distance of 510 nm. Simultaneous charge detection on both ends of the elongated dot demonstrates that the charge is well distributed across its nominal length, supported by the simulated quantum-mechanical electron density. Our results illustrate how single-electron boxes can be realised with versatile foot- prints that may enable novel and compact quantum processor layouts, offering distributed charge sensing in addition to the possibility of mediated coupling.
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Submitted 4 January, 2023;
originally announced January 2023.
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Silicon edge-dot architecture for quantum computing with global control and integrated trimming
Authors:
Michael A. Fogarty
Abstract:
A scalable quantum information processing architecture based on silicon metal-oxide-semiconductor technology is presented, combining quantum hardware elements from planar and 3D silicon-on-insulator technologies. This architecture is expressed in the ``unit cell'' approach, where tiling cells in two dimensions and allowing inter-cellular nearest-neighbour interactions makes the architecture compat…
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A scalable quantum information processing architecture based on silicon metal-oxide-semiconductor technology is presented, combining quantum hardware elements from planar and 3D silicon-on-insulator technologies. This architecture is expressed in the ``unit cell'' approach, where tiling cells in two dimensions and allowing inter-cellular nearest-neighbour interactions makes the architecture compatible with the surface code for fault tolerant quantum computation. The architecture utilises global control methods, substantially reducing processor complexity with scale: Single-qubit control is achieved using globally applied spin-resonance techniques and two-qubit interactions are mediated by large quantum dots. Further, a solution to device variation is proposed through integration of electronics for individual trimming of quantum dot voltage references. Such a combined set of solutions addresses several major barriers to scaling quantum machines within completely silicon based architectures.
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Submitted 19 August, 2022;
originally announced August 2022.
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Fast high-fidelity single-shot readout of spins in silicon using a single-electron box
Authors:
G. A. Oakes,
V. N. Ciriano-Tejel,
D. Wise,
M. A. Fogarty,
T. Lundberg,
C. Lainé,
S. Schaal,
F. Martins,
D. J. Ibberson,
L. Hutin,
B. Bertrand,
N. Stelmashenko,
J. A. W. Robinson,
L. Ibberson,
A. Hashim,
I. Siddiqi,
A. Lee,
M. Vinet,
C. G. Smith,
J. J. L. Morton,
M. F. Gonzalez-Zalba
Abstract:
Three key metrics for readout systems in quantum processors are measurement speed, fidelity and footprint. Fast high-fidelity readout enables mid-circuit measurements, a necessary feature for many dynamic algorithms and quantum error correction, while a small footprint facilitates the design of scalable, highly-connected architectures with the associated increase in computing performance. Here, we…
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Three key metrics for readout systems in quantum processors are measurement speed, fidelity and footprint. Fast high-fidelity readout enables mid-circuit measurements, a necessary feature for many dynamic algorithms and quantum error correction, while a small footprint facilitates the design of scalable, highly-connected architectures with the associated increase in computing performance. Here, we present two complementary demonstrations of fast high-fidelity single-shot readout of spins in silicon quantum dots using a compact, dispersive charge sensor: a radio-frequency single-electron box. The sensor, despite requiring fewer electrodes than conventional detectors, performs at the state-of-the-art achieving spin read-out fidelity of 99.2% in less than 6 $μ$s. We demonstrate that low-loss high-impedance resonators, highly coupled to the sensing dot, in conjunction with Josephson parametric amplification are instrumental in achieving optimal performance. We quantify the benefit of Pauli spin blockade over spin-dependent tunneling to a reservoir, as the spin-to-charge conversion mechanism in these readout schemes. Our results place dispersive charge sensing at the forefront of readout methodologies for scalable semiconductor spin-based quantum processors.
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Submitted 13 March, 2022;
originally announced March 2022.
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Dispersive readout of reconfigurable ambipolar quantum dots in a silicon-on-insulator nanowire
Authors:
Jingyu Duan,
Janne S. Lehtinen,
Michael A. Fogarty,
Simon Schaal,
Michelle Lam,
Alberto Ronzani,
Andrey Shchepetov,
Panu Koppinen,
Mika Prunnila,
Fernando Gonzalez-Zalba,
John J. L. Morton
Abstract:
We report on ambipolar gate-defined quantum dots in silicon on insulator (SOI) nanowires fabricated using a customised complementary metal-oxide-semiconductor (CMOS) process. The ambipolarity was achieved by extending a gate over an intrinsic silicon channel to both highly doped n-type and p-type terminals. We utilise the ability to supply ambipolar carrier reservoirs to the silicon channel to dem…
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We report on ambipolar gate-defined quantum dots in silicon on insulator (SOI) nanowires fabricated using a customised complementary metal-oxide-semiconductor (CMOS) process. The ambipolarity was achieved by extending a gate over an intrinsic silicon channel to both highly doped n-type and p-type terminals. We utilise the ability to supply ambipolar carrier reservoirs to the silicon channel to demonstrate an ability to reconfigurably define, with the same electrodes, double quantum dots with either holes or electrons. We use gate-based reflectometry to sense the inter-dot charge transition(IDT) of both electron and hole double quantum dots, achieving a minimum integration time of 160(100) $μ$s for electrons (holes). Our results present the opportunity to combine, in a single device, the long coherence times of electron spins with the electrically controllable holes spins in silicon.
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Submitted 29 September, 2020;
originally announced September 2020.
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Remote capacitive sensing in two-dimension quantum-dot arrays
Authors:
Jingyu Duan,
Michael A. Fogarty,
James Williams,
Louis Hutin,
Maud Vinet,
John J. L. Morton
Abstract:
We investigate gate-defined quantum dots in silicon on insulator nanowire field-effect transistors fabricated using a foundry-compatible fully-depleted silicon-on-insulator (FD-SOI) process. A series of split gates wrapped over the silicon nanowire naturally produces a $2\times n$ bilinear array of quantum dots along a single nanowire. We begin by studying the capacitive coupling of quantum dots w…
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We investigate gate-defined quantum dots in silicon on insulator nanowire field-effect transistors fabricated using a foundry-compatible fully-depleted silicon-on-insulator (FD-SOI) process. A series of split gates wrapped over the silicon nanowire naturally produces a $2\times n$ bilinear array of quantum dots along a single nanowire. We begin by studying the capacitive coupling of quantum dots within such a 2$\times$2 array, and then show how such couplings can be extended across two parallel silicon nanowires coupled together by shared, electrically isolated, 'floating' electrodes. With one quantum dot operating as a single-electron-box sensor, the floating gate serves to enhance the charge sensitivity range, enabling it to detect charge state transitions in a separate silicon nanowire. By comparing measurements from multiple devices we illustrate the impact of the floating gate by quantifying both the charge sensitivity decay as a function of dot-sensor separation and configuration within the dual-nanowire structure.
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Submitted 9 September, 2020; v1 submitted 29 May, 2020;
originally announced May 2020.
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Spin readout of a CMOS quantum dot by gate reflectometry and spin-dependent tunnelling
Authors:
V. N. Ciriano-Tejel,
M. A. Fogarty,
S. Schaal,
L. Hutin,
B. Bertrand,
Lisa Ibberson,
M. F. Gonzalez-Zalba,
J. Li,
Y. -M. Niquet,
M. Vinet,
J. J. L. Morton
Abstract:
Silicon spin qubits are promising candidates for realising large scale quantum processors, benefitting from a magnetically quiet host material and the prospects of leveraging the mature silicon device fabrication industry. We report the measurement of an electron spin in a singly-occupied gate-defined quantum dot, fabricated using CMOS compatible processes at the 300 mm wafer scale. For readout, w…
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Silicon spin qubits are promising candidates for realising large scale quantum processors, benefitting from a magnetically quiet host material and the prospects of leveraging the mature silicon device fabrication industry. We report the measurement of an electron spin in a singly-occupied gate-defined quantum dot, fabricated using CMOS compatible processes at the 300 mm wafer scale. For readout, we employ spin-dependent tunneling combined with a low-footprint single-lead quantum dot charge sensor, measured using radiofrequency gate reflectometry. We demonstrate spin readout in two devices using this technique, obtaining valley splittings in the range 0.5-0.7 meV using excited state spectroscopy, and measure a maximum electron spin relaxation time ($T_1$) of $9 \pm 3$ s at 1 Tesla. These long lifetimes indicate the silicon nanowire geometry and fabrication processes employed here show a great deal of promise for qubit devices, while the spin-readout method demonstrated here is well-suited to a variety of scalable architectures.
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Submitted 12 June, 2020; v1 submitted 15 May, 2020;
originally announced May 2020.
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A Silicon Surface Code Architecture Resilient Against Leakage Errors
Authors:
Zhenyu Cai,
Michael A. Fogarty,
Simon Schaal,
Sofia Patomaki,
Simon C. Benjamin,
John J. L. Morton
Abstract:
Spin qubits in silicon quantum dots are one of the most promising building blocks for large scale quantum computers thanks to their high qubit density and compatibility with the existing semiconductor technologies. High fidelity single-qubit gates exceeding the threshold of error correction codes like the surface code have been demonstrated, while two-qubit gates have reached 98\% fidelity and are…
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Spin qubits in silicon quantum dots are one of the most promising building blocks for large scale quantum computers thanks to their high qubit density and compatibility with the existing semiconductor technologies. High fidelity single-qubit gates exceeding the threshold of error correction codes like the surface code have been demonstrated, while two-qubit gates have reached 98\% fidelity and are improving rapidly. However, there are other types of error --- such as charge leakage and propagation --- that may occur in quantum dot arrays and which cannot be corrected by quantum error correction codes, making them potentially damaging even when their probability is small. We propose a surface code architecture for silicon quantum dot spin qubits that is robust against leakage errors by incorporating multi-electron mediator dots. Charge leakage in the qubit dots is transferred to the mediator dots via charge relaxation processes and then removed using charge reservoirs attached to the mediators. A stabiliser-check cycle, optimised for our hardware, then removes the correlations between the residual physical errors. Through simulations we obtain the surface code threshold for the charge leakage errors and show that in our architecture the damage due to charge leakage errors is reduced to a similar level to that of the usual depolarising gate noise. Spin leakage errors in our architecture are constrained to only ancilla qubits and can be removed during quantum error correction via reinitialisations of ancillae, which ensure the robustness of our architecture against spin leakage as well. Our use of an elongated mediator dots creates spaces throughout the quantum dot array for charge reservoirs, measuring devices and control gates, providing the scalability in the design.
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Submitted 2 December, 2019; v1 submitted 23 April, 2019;
originally announced April 2019.
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ESPResSo++ 2.0: Advanced methods for multiscale molecular simulation
Authors:
Horacio V. Guzman,
Nikita Tretyakov,
Hideki Kobayashi,
Aoife C. Fogarty,
Karsten Kreis,
Jakub Krajniak,
Christoph Junghans,
Kurt Kremer,
Torsten Stuehn
Abstract:
Molecular simulation is a scientific tool dealing with challenges in material science and biology. This is reflected in a permanent development and enhancement of algorithms within scientific simulation packages. Here, we present computational tools for multiscale modeling developed and implemented within the ESPResSo++ package. These include the latest applications of the adaptive resolution sche…
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Molecular simulation is a scientific tool dealing with challenges in material science and biology. This is reflected in a permanent development and enhancement of algorithms within scientific simulation packages. Here, we present computational tools for multiscale modeling developed and implemented within the ESPResSo++ package. These include the latest applications of the adaptive resolution scheme, the hydrodynamic interactions through a lattice Boltzmann solvent coupled to particle-based molecular dynamics, the implementation of the hierarchical strategy for equilibrating long-chained polymer melts and a heterogeneous spatial domain decomposition.
The software design of ESPResSo++ has kept its highly modular C++ kernel with a Python user interface. Moreover, it was enhanced by automatic scripts parsing configurations from other established packages providing scientists with a rapid setup possibility for their simulations.
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Submitted 24 December, 2018; v1 submitted 28 June, 2018;
originally announced June 2018.
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Fidelity benchmarks for two-qubit gates in silicon
Authors:
W. Huang,
C. H. Yang,
K. W. Chan,
T. Tanttu,
B. Hensen,
R. C. C. Leon,
M. A. Fogarty,
J. C. C. Hwang,
F. E. Hudson,
K. M. Itoh,
A. Morello,
A. Laucht,
A. S. Dzurak
Abstract:
Universal quantum computation will require qubit technology based on a scalable platform, together with quantum error correction protocols that place strict limits on the maximum infidelities for one- and two-qubit gate operations. While a variety of qubit systems have shown high fidelities at the one-qubit level, superconductor technologies have been the only solid-state qubits manufactured via s…
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Universal quantum computation will require qubit technology based on a scalable platform, together with quantum error correction protocols that place strict limits on the maximum infidelities for one- and two-qubit gate operations. While a variety of qubit systems have shown high fidelities at the one-qubit level, superconductor technologies have been the only solid-state qubits manufactured via standard lithographic techniques which have demonstrated two-qubit fidelities near the fault-tolerant threshold. Silicon-based quantum dot qubits are also amenable to large-scale manufacture and can achieve high single-qubit gate fidelities (exceeding 99.9%) using isotopically enriched silicon. However, while two-qubit gates have been demonstrated in silicon, it has not yet been possible to rigorously assess their fidelities using randomized benchmarking, since this requires sequences of significant numbers of qubit operations ($\gtrsim 20$) to be completed with non-vanishing fidelity. Here, for qubits encoded on the electron spin states of gate-defined quantum dots, we demonstrate Bell state tomography with fidelities ranging from 80% to 89%, and two-qubit randomized benchmarking with an average Clifford gate fidelity of 94.7% and average Controlled-ROT (CROT) fidelity of 98.0%. These fidelities are found to be limited by the relatively slow gate times employed here compared with the decoherence times $T_2^*$ of the qubits. Silicon qubit designs employing fast gate operations based on high Rabi frequencies, together with advanced pulsing techniques, should therefore enable significantly higher fidelities in the near future.
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Submitted 26 July, 2018; v1 submitted 14 May, 2018;
originally announced May 2018.
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Integrated silicon qubit platform with single-spin addressability, exchange control and robust single-shot singlet-triplet readout
Authors:
M. A. Fogarty,
K. W. Chan,
B. Hensen,
W. Huang,
T. Tanttu,
C. H. Yang,
A. Laucht,
M. Veldhorst,
F. E. Hudson,
K. M. Itoh,
D. Culcer,
A. Morello,
A. S. Dzurak
Abstract:
Silicon quantum dot spin qubits provide a promising platform for large-scale quantum computation because of their compatibility with conventional CMOS manufacturing and the long coherence times accessible using $^{28}$Si enriched material. A scalable error-corrected quantum processor, however, will require control of many qubits in parallel, while performing error detection across the constituent…
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Silicon quantum dot spin qubits provide a promising platform for large-scale quantum computation because of their compatibility with conventional CMOS manufacturing and the long coherence times accessible using $^{28}$Si enriched material. A scalable error-corrected quantum processor, however, will require control of many qubits in parallel, while performing error detection across the constituent qubits. Spin resonance techniques are a convenient path to parallel two-axis control, while Pauli spin blockade can be used to realize local parity measurements for error detection. Despite this, silicon qubit implementations have so far focused on either single-spin resonance control, or control and measurement via voltage-pulse detuning in the two-spin singlet-triplet basis, but not both simultaneously. Here, we demonstrate an integrated device platform incorporating a silicon metal-oxide-semiconductor double quantum dot that is capable of single-spin addressing and control via electron spin resonance, combined with high-fidelity spin readout in the singlet-triplet basis.
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Submitted 5 December, 2017; v1 submitted 11 August, 2017;
originally announced August 2017.
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A multi-resolution model to capture both global fluctuations of an enzyme and molecular recognition in the ligand-binding site
Authors:
Aoife C. Fogarty,
Raffaello Potestio,
Kurt Kremer
Abstract:
In multi-resolution simulations, different system components are simultaneously modelled at different levels of resolution, these being smoothly coupled together. In the case of enzyme systems, computationally expensive atomistic detail is needed in the active site to capture the chemistry of substrate binding. Global properties of the rest of the protein also play an essential role, determining t…
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In multi-resolution simulations, different system components are simultaneously modelled at different levels of resolution, these being smoothly coupled together. In the case of enzyme systems, computationally expensive atomistic detail is needed in the active site to capture the chemistry of substrate binding. Global properties of the rest of the protein also play an essential role, determining the structure and fluctuations of the binding site; however, these can be modelled on a coarser level. Similarly, in the most computationally efficient scheme only the solvent hydrating the active site requires atomistic detail. We present a methodology to couple atomistic and coarse-grained protein models, while solvating the atomistic part of the protein in atomistic water. This allows a free choice of which protein and solvent degrees of freedom to include atomistically, without loss of accuracy in the atomistic description. This multi-resolution methodology can successfully model stable ligand binding, and we further confirm its validity via an exploration of system properties relevant to enzymatic function. In addition to a computational speedup, such an approach can allow the identification of the essential degrees of freedom playing a role in a given process, potentially yielding new insights into biomolecular function.
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Submitted 2 November, 2016;
originally announced November 2016.
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Impact of g-factors and valleys on spin qubits in a silicon double quantum dot
Authors:
J. C. C. Hwang,
C. H. Yang,
M. Veldhorst,
N. Hendrickx,
M. A. Fogarty,
W. Huang,
F. E. Hudson,
A. Morello,
A. S. Dzurak
Abstract:
We define single electron spin qubits in a silicon MOS double quantum dot system. By mapping the qubit resonance frequency as a function of gate-induced electric field, the spectrum reveals an anticrossing that is consistent with an inter-valley spin-orbit coupling. We fit the data from which we extract an inter-valley coupling strength of 43 MHz. In addition, we observe a narrow resonance near th…
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We define single electron spin qubits in a silicon MOS double quantum dot system. By mapping the qubit resonance frequency as a function of gate-induced electric field, the spectrum reveals an anticrossing that is consistent with an inter-valley spin-orbit coupling. We fit the data from which we extract an inter-valley coupling strength of 43 MHz. In addition, we observe a narrow resonance near the primary qubit resonance when we operate the device in the (1,1) charge configuration. The experimental data is consistent with a simulation involving two weakly exchanged-coupled spins with a g-factor difference of 1 MHz, of the same order as the Rabi frequency. We conclude that the narrow resonance is the result of driven transitions between the T- and T+ triplet states, using an ESR signal of frequency located halfway between the resonance frequencies of the two individual spins. The findings presented here offer an alternative method of implementing two-qubit gates, of relevance to the operation of larger scale spin qubit systems.
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Submitted 26 February, 2017; v1 submitted 27 August, 2016;
originally announced August 2016.
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A logical qubit in a linear array of semiconductor quantum dots
Authors:
Cody Jones,
Michael A. Fogarty,
Andrea Morello,
Mark F. Gyure,
Andrew S. Dzurak,
Thaddeus D. Ladd
Abstract:
We design and analyze a logical qubit composed of a linear array of electron spins in semiconductor quantum dots. To avoid the difficulty of fully controlling a two-dimensional array of dots, we adapt spin control and error correction to a one-dimensional line of silicon quantum dots. Control speed and efficiency are maintained via a scheme in which electron spin states are controlled globally usi…
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We design and analyze a logical qubit composed of a linear array of electron spins in semiconductor quantum dots. To avoid the difficulty of fully controlling a two-dimensional array of dots, we adapt spin control and error correction to a one-dimensional line of silicon quantum dots. Control speed and efficiency are maintained via a scheme in which electron spin states are controlled globally using broadband microwave pulses for magnetic resonance while two-qubit gates are provided by local electrical control of the exchange interaction between neighboring dots. Error correction with two-, three-, and four-qubit codes is adapted to a linear chain of qubits with nearest-neighbor gates. We estimate an error correction threshold of 1e-4. Furthermore, we describe a sequence of experiments to validate the methods on near-term devices starting from four coupled dots.
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Submitted 28 February, 2017; v1 submitted 22 August, 2016;
originally announced August 2016.
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Non-exponential Fidelity Decay in Randomized Benchmarking with Low-Frequency Noise
Authors:
M. A. Fogarty,
M. Veldhorst,
R. Harper,
C. H. Yang,
S. D. Bartlett,
S. T. Flammia,
A. S. Dzurak
Abstract:
We show that non-exponential fidelity decays in randomized benchmarking experiments on quantum dot qubits are consistent with numerical simulations that incorporate low-frequency noise. By expanding standard randomized benchmarking analysis to this experimental regime, we find that such non-exponential decays are better modeled by multiple exponential decay rates, leading to an instantaneous contr…
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We show that non-exponential fidelity decays in randomized benchmarking experiments on quantum dot qubits are consistent with numerical simulations that incorporate low-frequency noise. By expanding standard randomized benchmarking analysis to this experimental regime, we find that such non-exponential decays are better modeled by multiple exponential decay rates, leading to an instantaneous control fidelity for isotopically-purified-silicon MOS quantum dot qubits which can be as high as 99.9% when low-frequency noise conditions and system calibrations are favorable. These advances in qubit characterization and validation methods underpin the considerable prospects for silicon as a qubit platform for fault-tolerant quantum computation.
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Submitted 22 February, 2015; v1 submitted 18 February, 2015;
originally announced February 2015.
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Advantages and challenges in coupling an ideal gas to atomistic models in adaptive resolution simulations
Authors:
Karsten Kreis,
Aoife C. Fogarty,
Kurt Kremer,
Raffaello Potestio
Abstract:
In adaptive resolution simulations, molecular fluids are modeled employing different levels of resolution in different subregions of the system. When traveling from one region to the other, particles change their resolution on the fly. One of the main advantages of such approaches is the computational efficiency gained in the coarse-grained region. In this respect the best coarse-grained system to…
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In adaptive resolution simulations, molecular fluids are modeled employing different levels of resolution in different subregions of the system. When traveling from one region to the other, particles change their resolution on the fly. One of the main advantages of such approaches is the computational efficiency gained in the coarse-grained region. In this respect the best coarse-grained system to employ in the low resolution region would be the ideal gas, making intermolecular force calculations in the coarse-grained subdomain redundant. In this case, however, a smooth coupling is challenging due to the high energetic imbalance between typical liquids and a system of non-interacting particles. In the present work, we investigate this approach, using as a test case the most biologically relevant fluid, water. We demonstrate that a successful coupling of water to the ideal gas can be achieved with current adaptive resolution methods, and discuss the issues that remain to be addressed.
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Submitted 3 March, 2015; v1 submitted 21 December, 2014;
originally announced December 2014.
