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Observation of a Smoothly Tunable Dirac Point in $Ge(Bi_{x}Sb_{1-x})_{2}Te_{4}$
Authors:
Sean Howard,
Arjun Raghavan,
Davide Iaia,
Caizhi Xu,
David Flötotto,
Man-Hong Wong,
Sung-Kwan Mo,
Bahadur Singh,
Raman Sankar,
Hsin Lin,
Tai-Chang Chiang,
Vidya Madhavan
Abstract:
State-of-the-art topological devices require the use topological surface states to drive electronic transport. In this study, we examine a tunable topological system, $Ge(Bi_{x}Sb_{1-x})_{2}Te_{4}$, for a range of 'x' values from 0 to 1, using a combination of Fourier Transform Scanning Tunneling Spectroscopy (FT-STS) and Angle-Resolved Photoemission Spectroscopy (ARPES). Our results show that the…
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State-of-the-art topological devices require the use topological surface states to drive electronic transport. In this study, we examine a tunable topological system, $Ge(Bi_{x}Sb_{1-x})_{2}Te_{4}$, for a range of 'x' values from 0 to 1, using a combination of Fourier Transform Scanning Tunneling Spectroscopy (FT-STS) and Angle-Resolved Photoemission Spectroscopy (ARPES). Our results show that the Dirac point shifts linearly with 'x', crossing the Fermi energy near x = 0.7. This novel observation of a smoothly tunable, isolated Dirac point crossing through the topological transport regime and having strong linear dependence with substitution can be critical for future topological spintronics applications.
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Submitted 21 October, 2021; v1 submitted 13 January, 2021;
originally announced January 2021.
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Massive suppression of proximity pairing in topological (Bi$_{1-x}$Sb$_{x})_2$Te$_3$ films on niobium
Authors:
Joseph A. Hlevyack,
Sahand Najafzadeh,
Meng-Kai Lin,
Takahiro Hashimoto,
Tsubaki Nagashima,
Akihiro Tsuzuki,
Akiko Fukushima,
Cédric Bareille,
Yang Bai,
Peng Chen,
Ro-Ya Liu,
Yao Li,
David Flötotto,
José Avila,
James N. Eckstein,
Shik Shin,
Kozo Okazaki,
T. -C. Chiang
Abstract:
Interfacing bulk conducting topological Bi$_2$Se$_3$ films with s-wave superconductors initiates strong superconducting order in the nontrivial surface states. However, bulk insulating topological (Bi$_{1-x}$Sb$_{x})_2$Te$_3$ films on bulk Nb instead exhibit a giant attenuation of surface superconductivity, even for films only two-layers thick. This massive suppression of proximity pairing is evid…
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Interfacing bulk conducting topological Bi$_2$Se$_3$ films with s-wave superconductors initiates strong superconducting order in the nontrivial surface states. However, bulk insulating topological (Bi$_{1-x}$Sb$_{x})_2$Te$_3$ films on bulk Nb instead exhibit a giant attenuation of surface superconductivity, even for films only two-layers thick. This massive suppression of proximity pairing is evidenced by ultrahigh-resolution band mappings and by contrasting quantified superconducting gaps with those of heavily n-doped topological Bi$_2$Se$_3$/Nb. The results underscore the limitations of using superconducting proximity effects to realize topological superconductivity in nearly intrinsic systems.
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Submitted 2 June, 2020;
originally announced June 2020.
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In-situ strain tuning of the Dirac surface states in Bi2Se3 films
Authors:
David Floetotto,
Yang Bai,
Yang-Hao Chan,
Peng Chen,
Xiaoxiong Wang,
Paul Rossi,
Cai-Zhi Xu,
Can Zhang,
Joe A. Hlevyack,
Jonathan D. Denlinger,
Hawoong Hong,
Mei-Yin Chou,
Eric J. Mittemeijer,
James N. Eckstein,
Tai-Chang Chiang
Abstract:
Elastic strain has the potential for a controlled manipulation of the band gap and spin-polarized Dirac states of topological materials, which can lead to pseudo-magnetic-field effects, helical flat bands and topological phase transitions. However, practical realization of these exotic phenomena is challenging and yet to be achieved. Here, we show that the Dirac surface states of the topological i…
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Elastic strain has the potential for a controlled manipulation of the band gap and spin-polarized Dirac states of topological materials, which can lead to pseudo-magnetic-field effects, helical flat bands and topological phase transitions. However, practical realization of these exotic phenomena is challenging and yet to be achieved. Here, we show that the Dirac surface states of the topological insulator Bi2Se3 can be reversibly tuned by an externally applied elastic strain. Performing in-situ x-ray diffraction and in-situ angle-resolved photoemission spectroscopy measurements during tensile testing of epitaxial Bi2Se3 films bonded onto a flexible substrate, we demonstrate elastic strains of up to 2.1% and quantify the resulting reversible changes in the topological surface state. Our study establishes the functional relationship between the lattice and electronic structures of Bi2Se3 and, more generally, demonstrates a new route toward momentum-resolved mapping of strain-induced band structure changes.
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Submitted 1 July, 2018;
originally announced July 2018.
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Experimental and Theoretical Electronic Structure and Symmetry Effects in Ultrathin NbSe2 Films
Authors:
Cai-Zhi Xu,
Xiaoxiong Wang,
Peng Chen,
David Flototto,
Joseph Andrew Hlevyack,
Meng-Kai Lin,
Guang Bian,
Sung-Kwan Mo,
Tai-Chang Chiang
Abstract:
Layered quasi-two-dimensional transition metal dichalcogenides (TMDCs), which can be readily made in ultrathin films, offer excellent opportunities for studying how dimensionality affects electronic structure and physical properties. Among all TMDCs, NbSe2 is of special interest; bulk NbSe2 hosts a charge-density-wave phase at low temperatures and has the highest known superconducting transition t…
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Layered quasi-two-dimensional transition metal dichalcogenides (TMDCs), which can be readily made in ultrathin films, offer excellent opportunities for studying how dimensionality affects electronic structure and physical properties. Among all TMDCs, NbSe2 is of special interest; bulk NbSe2 hosts a charge-density-wave phase at low temperatures and has the highest known superconducting transition temperature, and these properties can be substantially modified in the ultrathin film limit. Motivated by these effects, we report herein a study of few-layer NbSe2 films, with a well-defined single-domain orientation, epitaxially grown on Gallium Arsenide (GaAs). Angle-resolved photoemission spectroscopy (ARPES) was used to determine the electronic band structure and the Fermi surface as a function of layer thickness; first-principles band structure calculations were performed for comparison. The results show interesting changes as the film thickness increases from a monolayer (ML) to several layers. The most notable changes occur between a ML and a bilayer, where the inversion symmetry in bulk NbSe2 is preserved in the bilayer but not in the ML. The results illustrate some basic dimensional effects and provide a basis for further exploring and understanding the properties of NbSe2.
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Submitted 7 June, 2018;
originally announced June 2018.
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Gapped Electronic Structure of Epitaxial Stanene on InSb(111)
Authors:
Cai-Zhi Xu,
Yang-Hao Chan,
Peng Chen,
Xiaoxiong Wang,
David Flötotto,
Joseph Andrew Hlevyack,
Guang Bian,
Sung-Kwan Mo,
Mei-Yin Chou,
Tai-Chang Chiang
Abstract:
Stanene (single-layer grey tin), with an electronic structure akin to that of graphene but exhibiting a much larger spin-orbit gap, offers a promising platform for room-temperature electronics based on the quantum spin Hall (QSH) effect. This material has received much theoretical attention, but a suitable substrate for stanene growth that results in an overall gapped electronic structure has been…
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Stanene (single-layer grey tin), with an electronic structure akin to that of graphene but exhibiting a much larger spin-orbit gap, offers a promising platform for room-temperature electronics based on the quantum spin Hall (QSH) effect. This material has received much theoretical attention, but a suitable substrate for stanene growth that results in an overall gapped electronic structure has been elusive; a sizable gap is necessary for room-temperature applications. Here, we report a study of stanene epitaxially grown on the (111)B-face of indium antimonide (InSb). Angle-resolved photoemission spectroscopy (ARPES) measurements reveal a gap of 0.44 eV, in agreement with our first-principles calculations. The results indicate that stanene on InSb(111) is a strong contender for electronic QSH applications.
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Submitted 22 November, 2017;
originally announced November 2017.
