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Coulomb sensing of single ballistic electrons
Authors:
J. D. Fletcher,
W. Park,
P. See,
J. P. Griffiths,
G. A. C. Jones,
I. Farrer,
D. A. Ritchie,
H. -S. Sim,
M. Kataoka
Abstract:
While ballistic electrons are a key tool for applications in sensing and flying qubits, sub-nanosecond propagation times and complicated interactions make control of ballistic single electrons challenging. Recent experiments have revealed Coulomb collisions of counterpropagating electrons in a beam splitter, giving time resolved control of interactions between single electrons. Here we use remote…
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While ballistic electrons are a key tool for applications in sensing and flying qubits, sub-nanosecond propagation times and complicated interactions make control of ballistic single electrons challenging. Recent experiments have revealed Coulomb collisions of counterpropagating electrons in a beam splitter, giving time resolved control of interactions between single electrons. Here we use remote Coulomb interactions to demonstrate a scheme for sensing single ballistic electrons. We show that interactions are highly controllable via electron energy and emission timing. We use a weakly-coupled `sensing' regime to characterise the nanoscale potential landscape of the beam splitter and the strength of the Coulomb interaction, and show multi-electron sensing with picosecond resolution.
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Submitted 20 December, 2024;
originally announced December 2024.
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Method for efficient large-scale cryogenic characterization of CMOS technologies
Authors:
Jonathan Eastoe,
Grayson M. Noah,
Debargha Dutta,
Alessandro Rossi,
Jonathan D. Fletcher,
Alberto Gomez-Saiz
Abstract:
Semiconductor integrated circuits operated at cryogenic temperature will play an essential role in quantum computing architectures. These can offer equivalent or superior performance to their room-temperature counterparts while enabling a scaling up of the total number of qubits under control. Silicon integrated circuits can be operated at a temperature stage of a cryogenic system where cooling po…
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Semiconductor integrated circuits operated at cryogenic temperature will play an essential role in quantum computing architectures. These can offer equivalent or superior performance to their room-temperature counterparts while enabling a scaling up of the total number of qubits under control. Silicon integrated circuits can be operated at a temperature stage of a cryogenic system where cooling power is sufficient ($\sim$3.5+ K) to allow for analog signal chain components (e.g. amplifiers and mixers), local signal synthesis, signal digitization, and control logic. A critical stage in cryo-electronics development is the characterization of individual transistor devices in a particular technology node at cryogenic temperatures. This data enables the creation of a process design kit (PDK) to model devices and simulate integrated circuits operating well below the minimum standard temperature ranges covered by foundry-released models (e.g. -55 °C). Here, an efficient approach to the characterization of large numbers of components at cryogenic temperature is reported. We developed a system to perform DC measurements with Kelvin sense of individual transistors at 4.2 K using integrated on-die multiplexers, enabling bulk characterization of thousands of devices with no physical change to the measurement setup.
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Submitted 14 November, 2024; v1 submitted 17 April, 2024;
originally announced April 2024.
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Spectroscopy of hot-electron pair emission from a driven quantum dot
Authors:
Jens Schulenborg,
Jonathan D. Fletcher,
Masaya Kataoka,
Janine Splettstoesser
Abstract:
On-demand emission of individual electrons for the implementation of flying qubits and quantum electron-optics experiments requires precise knowledge and tunability of emission times and energies. Crucially, for confined electron sources such as driven quantum dots, the effect of local Coulomb interaction on these emission properties needs to be understood, in particular if multiple particles are…
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On-demand emission of individual electrons for the implementation of flying qubits and quantum electron-optics experiments requires precise knowledge and tunability of emission times and energies. Crucially, for confined electron sources such as driven quantum dots, the effect of local Coulomb interaction on these emission properties needs to be understood, in particular if multiple particles are emitted close in time or near-simultaneously. This paper theoretically analyzes electron-pair emission from an ac driven quantum dot, detailing the competing effects of the electron-electron interaction, the time-dependent potential forming the quantum dot, and of the quantum-state properties such as degeneracy on the emission times and energies. We complement a numerical analysis of the coherent Schrödinger evolution of two particles in a driven potential with a master-equation description for strongly interacting electrons tunneling stochastically into a weakly coupled conductor. This captures a broad range of different influences on the emitted particles and thereby guides the development of single-electron sources higher control over two-particle emission properties.
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Submitted 1 April, 2024; v1 submitted 27 March, 2023;
originally announced March 2023.
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Time-resolved Coulomb collision of single electrons
Authors:
J. D. Fletcher,
W. Park,
S. Ryu,
P. See,
J. P. Griffiths,
G. A. C. Jones,
I. Farrer,
D. A. Ritchie,
H. -S. Sim,
M. Kataoka
Abstract:
Precise control over interactions between ballistic electrons will enable us to exploit Coulomb interactions in novel ways, to develop high-speed sensing, to reach a non-linear regime in electron quantum optics and to realise schemes for fundamental two-qubit operations on flying electrons. Time-resolved collisions between electrons have been used to probe the indistinguishability, Wigner function…
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Precise control over interactions between ballistic electrons will enable us to exploit Coulomb interactions in novel ways, to develop high-speed sensing, to reach a non-linear regime in electron quantum optics and to realise schemes for fundamental two-qubit operations on flying electrons. Time-resolved collisions between electrons have been used to probe the indistinguishability, Wigner function and decoherence of single electron wavepackets. Due to the effects of screening, none of these experiments were performed in a regime where Coulomb interactions were particularly strong. Here we explore the Coulomb collision of two high energy electrons in counter-propagating ballistic edge states. We show that, in this kind of unscreened device, the partitioning probabilities at different electron arrival times and barrier height are shaped by Coulomb repulsion between the electrons. This prevents the wavepacket overlap required for the manifestation of fermionic exchange statistics but suggests a new class of devices for studying and manipulating interactions of ballistic single electrons.
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Submitted 7 October, 2022;
originally announced October 2022.
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Continuous-Variable Tomography of Solitary Electrons
Authors:
J. D. Fletcher,
N. Johnson,
E. Locane,
P. See,
J. P. Griffiths,
I. Farrer,
D. A. Ritchie,
P. W. Brouwer,
V. Kashcheyevs,
M. Kataoka
Abstract:
A method for characterising the wave-function of freely-propagating particles would provide a useful tool for developing quantum-information technologies with single electronic excitations. Previous continuous-variable quantum tomography techniques developed to analyse electronic excitations in the energy-time domain have been limited to energies close to the Fermi level. We show that a wideband t…
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A method for characterising the wave-function of freely-propagating particles would provide a useful tool for developing quantum-information technologies with single electronic excitations. Previous continuous-variable quantum tomography techniques developed to analyse electronic excitations in the energy-time domain have been limited to energies close to the Fermi level. We show that a wideband tomography of single-particle distributions is possible using energy-time filtering and that the Wigner representation of the mixed-state density matrix can be reconstructed for solitary electrons emitted by an on-demand single-electron source. These are highly localised distributions, isolated from the Fermi sea. While we cannot resolve the pure state Wigner function of our excitations due to classical fluctuations, we can partially resolve the chirp and squeezing of the Wigner function imposed by emission conditions and quantify the quantumness of the source. This tomography scheme, when implemented with sufficient experimental resolution, will enable quantum-limited measurements, providing information on electron coherence and entanglement at the individual particle level.
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Submitted 20 January, 2020; v1 submitted 30 January, 2019;
originally announced January 2019.
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Rectification in mesoscopic AC-gated semiconductor devices
Authors:
S. P. Giblin,
M. Kataoka,
J. D. Fletcher,
P. See,
T. J. B. M. Janssen,
J. P. Griffiths,
G. A. C. Jones,
I. Farrer,
D. A. Ritchie
Abstract:
We measure the rectified dc currents resulting when a 3-terminal semiconductor device with gate-dependent conductance is driven with an ac gate voltage. The rectified currents exhibit surprisingly complex behaviour as the dc source-drain bias voltage, the dc gate voltage and the amplitude of the ac gate voltage are varied. We obtain good agreement between our data and a model based on simple assum…
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We measure the rectified dc currents resulting when a 3-terminal semiconductor device with gate-dependent conductance is driven with an ac gate voltage. The rectified currents exhibit surprisingly complex behaviour as the dc source-drain bias voltage, the dc gate voltage and the amplitude of the ac gate voltage are varied. We obtain good agreement between our data and a model based on simple assumptions about the stray impedances on the sample chip, over a wide frequency range. This method is applicable to many types of experiment which involve ac gating of a non-linear device, and where an undesireable rectified contribution to the measured signal is present. Finally, we evaluate the small rectified currents flowing in tunable-barrier electron pumps operated in the pinched-off regime. These currents are at most $10^{-12}$ of the pumped current for a pump current of 100 pA. This result is encouraging for the development of tunable-barrier pumps as metrological current standards.
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Submitted 27 September, 2018;
originally announced September 2018.
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Error detection in a tunable-barrier electron pump
Authors:
S. P. Giblin,
P. See,
J. D. Fletcher,
T. J. B. M. Janssen,
J. P. Griffiths,
G. A. C. Jones,
I. Farrer,
M. Kataoka
Abstract:
We measure the average number of electrons loaded into an electrostatically-defined quantum dot (QD) operated as a tunable-barrier electron pump, using a point-contact (PC) charge sensor 1 micron away from the QD. The measurement of the electron number probes the QD loading dynamics even in the limit of slow gate voltage rise-times, when the pumped current is too small to measure. Using simulation…
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We measure the average number of electrons loaded into an electrostatically-defined quantum dot (QD) operated as a tunable-barrier electron pump, using a point-contact (PC) charge sensor 1 micron away from the QD. The measurement of the electron number probes the QD loading dynamics even in the limit of slow gate voltage rise-times, when the pumped current is too small to measure. Using simulations we show that, with optimised QD-PC coupling, the experiment can make single-shot measurements of the number of electrons in the QD with sufficiently high fidelity to test the error rate of the electron pump with metrological precision.
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Submitted 26 September, 2018;
originally announced September 2018.
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LO-phonon emission rate of hot electrons from an on-demand single-electron source in a GaAs/AlGaAs heterostructure
Authors:
N. Johnson,
C. Emary,
S. Ryu,
H. -S. Sim,
P. See,
J. D. Fletcher,
J. P. Griffiths,
G. A. C. Jones,
I. Farrer,
D. A. Ritchie,
M. Pepper,
T. J. B. M. Janssen,
M. Kataoka
Abstract:
Using a recently-developed time-of-flight measurement technique with 1 ps time resolution and electron-energy spectroscopy, we developed a method to measure the longitudinal-optical-phonon emission rate of hot electrons travelling along a depleted edge of a quantum Hall bar. A comparison of the experimental results to a single-particle model implies that the main scattering mechanism involves a tw…
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Using a recently-developed time-of-flight measurement technique with 1 ps time resolution and electron-energy spectroscopy, we developed a method to measure the longitudinal-optical-phonon emission rate of hot electrons travelling along a depleted edge of a quantum Hall bar. A comparison of the experimental results to a single-particle model implies that the main scattering mechanism involves a two-step process via intra-Landau-level transition. We show this scattering can be suppressed by controlling the edge potential profile, and a scattering length > 1 mm can be achieved, allowing the use of this system for scalable single-electron device applications.
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Submitted 25 December, 2017;
originally announced December 2017.
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Thermal-error regime in high-accuracy gigahertz single-electron pumping
Authors:
R. Zhao,
A. Rossi,
S. P. Giblin,
J. D. Fletcher,
F. E. Hudson,
M. Möttönen,
M. Kataoka,
A. S. Dzurak
Abstract:
Single-electron pumps based on semiconductor quantum dots are promising candidates for the emerging quantum standard of electrical current. They can transfer discrete charges with part-per-million (ppm) precision in nanosecond time scales. Here, we employ a metal-oxide-semiconductor silicon quantum dot to experimentally demonstrate high-accuracy gigahertz single-electron pumping in the regime wher…
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Single-electron pumps based on semiconductor quantum dots are promising candidates for the emerging quantum standard of electrical current. They can transfer discrete charges with part-per-million (ppm) precision in nanosecond time scales. Here, we employ a metal-oxide-semiconductor silicon quantum dot to experimentally demonstrate high-accuracy gigahertz single-electron pumping in the regime where the number of electrons trapped in the dot is determined by the thermal distribution in the reservoir leads. In a measurement with traceability to primary voltage and resistance standards, the averaged pump current over the quantized plateau, driven by a \mbox{$1$-GHz} sinusoidal wave in the absence of magnetic field, is equal to the ideal value of $ef$ within a measurement uncertainty as low as $0.27$~ppm.
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Submitted 13 November, 2017; v1 submitted 14 March, 2017;
originally announced March 2017.
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Ultrafast Voltage Sampling using Single-Electron Wavepackets
Authors:
N. Johnson,
J. D. Fletcher,
D. A. Humphreys,
P. See,
J. P. Griffiths,
G. A. C. Jones,
I. Farrer,
D. A. Ritchie,
M. Pepper,
T. J. B. M Janssen,
M. Kataoka
Abstract:
We demonstrate an ultrafast voltage sampling technique using a stream of electron wavepackets. Electrons are emitted from a single-electron pump and travel through electron waveguides towards a detector potential barrier. Our electrons sample an instantaneous voltage on the gate upon arrival at the detector barrier. Fast sampling is achieved by minimising the duration that the electrons interact w…
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We demonstrate an ultrafast voltage sampling technique using a stream of electron wavepackets. Electrons are emitted from a single-electron pump and travel through electron waveguides towards a detector potential barrier. Our electrons sample an instantaneous voltage on the gate upon arrival at the detector barrier. Fast sampling is achieved by minimising the duration that the electrons interact with the barrier, which can be made as small as a few picoseconds. The value of the instantaneous voltage can be determined by varying the gate voltage to match the barrier height to the electron energy, which is used as a stable reference. The test waveform can be reconstructed by shifting the electron arrival time against it. We argue that this method has scope to increase the bandwidth of voltage sampling to 100 GHz and beyond.
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Submitted 14 October, 2016; v1 submitted 3 October, 2016;
originally announced October 2016.
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Anomalous critical fields in quantum critical superconductors
Authors:
C. Putzke,
P. Walmsley,
J. D. Fletcher,
L. Malone,
D. Vignolles,
C. Proust,
S. Badoux,
P. See,
H. E. Beere,
D. A. Ritchie,
S. Kasahara,
Y. Mizukami,
T. Shibauchi,
Y. Matsuda,
A. Carrington
Abstract:
Fluctuations around an antiferromagnetic quantum critical point (QCP) are believed to lead to unconventional superconductivity and in some cases to high-temperature superconductivity. However, the exact mechanism by which this occurs remains poorly understood. The iron-pnictide superconductor BaFe$_2$(As$_{1-x}$P$_x$)$_2$ is perhaps the clearest example to date of a high temperature quantum critic…
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Fluctuations around an antiferromagnetic quantum critical point (QCP) are believed to lead to unconventional superconductivity and in some cases to high-temperature superconductivity. However, the exact mechanism by which this occurs remains poorly understood. The iron-pnictide superconductor BaFe$_2$(As$_{1-x}$P$_x$)$_2$ is perhaps the clearest example to date of a high temperature quantum critical superconductor, and so it is a particularly suitable system in which to study how the quantum critical fluctuations affect the superconducting state. Here we show that the proximity of the QCP yields unexpected anomalies in the superconducting critical fields. We find that both the lower and upper critical fields strongly violate the expectations from the conventional theory taking into account the observed mass enhancement near the QCP. These anomalous behaviours of the critical fields imply that the energy of superconducting vortices is enhanced, possibly due to a microscopic mixing of antiferromagnetism and superconductivity, suggesting that a highly unusual vortex state is realised in quantum critical superconductors.
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Submitted 15 December, 2014; v1 submitted 6 February, 2014;
originally announced February 2014.
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Anomalous superfluid density in quantum critical superconductors
Authors:
K. Hashimoto,
Y. Mizukami,
R. Katsumata,
H. Shishido,
M. Yamashita,
H. Ikeda,
Y. Matsuda,
J. A. Schlueter,
J. D. Fletcher,
A. Carrington,
D. Gnida,
D. Kaczorowski,
T. Shibauchi
Abstract:
When a second-order magnetic phase transition is tuned to zero temperature by a non-thermal parameter, quantum fluctuations are critically enhanced, often leading to the emergence of unconventional superconductivity. In these `quantum critical' superconductors it has been widely reported that the normal-state properties above the superconducting transition temperature $T_c$ often exhibit anomalous…
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When a second-order magnetic phase transition is tuned to zero temperature by a non-thermal parameter, quantum fluctuations are critically enhanced, often leading to the emergence of unconventional superconductivity. In these `quantum critical' superconductors it has been widely reported that the normal-state properties above the superconducting transition temperature $T_c$ often exhibit anomalous non-Fermi liquid behaviors and enhanced electron correlations. However, the effect of these strong critical fluctuations on the superconducting condensate below $T_c$ is less well established. Here we report measurements of the magnetic penetration depth in heavy-fermion, iron-pnictide, and organic superconductors located close to antiferromagnetic quantum critical points showing that the superfluid density in these nodal superconductors universally exhibit, unlike the expected $T$-linear dependence, an anomalous 3/2 power-law temperature dependence over a wide temperature range. We propose that this non-integer power-law can be explained if a strong renormalization of effective Fermi velocity due to quantum fluctuations occurs only for momenta $\bm{k}$ close to the nodes in the superconducting energy gap $Δ(\bm{k})$. We suggest that such `nodal criticality' may have an impact on low-energy properties of quantum critical superconductors.
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Submitted 12 February, 2013;
originally announced February 2013.
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Clock-controlled emission of single-electron wavepackets in a solid-state circuit
Authors:
J. D. Fletcher,
M. Kataoka,
H. Howe,
M. Pepper,
P. See,
S. P. Giblin,
J. P. Griffiths,
G. A. C. Jones,
I. Farrer,
D. A. Ritchie,
T. J. B. M. Janssen
Abstract:
We demonstrate the transmission of single electron wavepackets from a clock-controlled source through an empty high-energy edge channel. The quantum dot source is loaded with single electrons which are then emitted with high kinetic energy ($\sim$150 meV). We find at high magnetic field that these electron can be transported over several microns without inelastic electron-electron or electron-phon…
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We demonstrate the transmission of single electron wavepackets from a clock-controlled source through an empty high-energy edge channel. The quantum dot source is loaded with single electrons which are then emitted with high kinetic energy ($\sim$150 meV). We find at high magnetic field that these electron can be transported over several microns without inelastic electron-electron or electron-phonon scattering. Using a time-resolved spectroscopic technique, we measure the electron energy and wavepacket size at picosecond time scales. We also show how our technique can be used to switch individual electrons into different paths.
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Submitted 20 February, 2013; v1 submitted 20 December, 2012;
originally announced December 2012.
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Gigahertz quantized charge pumping in graphene quantum dots
Authors:
M. R. Connolly,
K. L. Chiu,
S. P. Giblin,
M. Kataoka,
J. D. Fletcher,
C. Chua,
J. P. Griffiths,
G. A. C. Jones,
V. I. Fal'ko,
C. G. Smith,
T. J. B. M. Janssen
Abstract:
Single electron pumps are set to revolutionize electrical metrology by enabling the ampere to be re-defined in terms of the elementary charge of an electron. Pumps based on lithographically-fixed tunnel barriers in mesoscopic metallic systems and normal/superconducting hybrid turnstiles can reach very small error rates, but only at MHz pumping speeds corresponding to small currents of the order 1…
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Single electron pumps are set to revolutionize electrical metrology by enabling the ampere to be re-defined in terms of the elementary charge of an electron. Pumps based on lithographically-fixed tunnel barriers in mesoscopic metallic systems and normal/superconducting hybrid turnstiles can reach very small error rates, but only at MHz pumping speeds corresponding to small currents of the order 1 pA. Tunable barrier pumps in semiconductor structures have been operated at GHz frequencies, but the theoretical treatment of the error rate is more complex and only approximate predictions are available. Here, we present a monolithic, fixed barrier single electron pump made entirely from graphene. We demonstrate pump operation at frequencies up to 1.4 GHz, and predict the error rate to be as low as 0.01 parts per million at 90 MHz. Combined with the record-high accuracy of the quantum Hall effect and proximity induced Josephson junctions, accurate quantized current generation brings an all-graphene closure of the quantum metrological triangle within reach. Envisaged applications for graphene charge pumps outside quantum metrology include single photon generation via electron-hole recombination in electrostatically doped bilayer graphene reservoirs, and for readout of spin-based graphene qubits in quantum information processing.
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Submitted 27 July, 2012;
originally announced July 2012.
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Towards a quantum representation of the ampere using single electron pumps
Authors:
S. P. Giblin,
M. Kataoka,
J. D. Fletcher,
P. See,
T. J. B. M. Janssen,
J. P. Griffiths,
G. A. C. Jones,
I. Farrer,
D. A. Ritchie
Abstract:
Electron pumps generate a macroscopic electric current by controlled manipulation of single electrons. Despite intensive research towards a quantum current standard over the last 25 years, making a fast and accurate quantised electron pump has proved extremely difficult. Here we demonstrate that the accuracy of a semiconductor quantum dot pump can be dramatically improved by using specially design…
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Electron pumps generate a macroscopic electric current by controlled manipulation of single electrons. Despite intensive research towards a quantum current standard over the last 25 years, making a fast and accurate quantised electron pump has proved extremely difficult. Here we demonstrate that the accuracy of a semiconductor quantum dot pump can be dramatically improved by using specially designed gate drive waveforms. Our pump can generate a current of up to 150 pA, corresponding to almost a billion electrons per second, with an experimentally demonstrated current accuracy better than 1.2 parts per million (ppm) and strong evidence, based on fitting data to a model, that the true accuracy is approaching 0.01 ppm. This type of pump is a promising candidate for further development as a realisation of the SI base unit ampere, following a re-definition of the ampere in terms of a fixed value of the elementary charge.
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Submitted 10 July, 2012; v1 submitted 12 January, 2012;
originally announced January 2012.
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Stabilization of single-electron pumps by high magnetic fields
Authors:
J. D. Fletcher,
M. Kataoka,
S. P. Giblin,
Sunghun Park,
H. -S. Sim,
P. See,
T. J. B. M. Janssen,
J. P. Griffiths,
G. A. C. Jones,
H. E. Beere,
D. A. Ritchie
Abstract:
We study the effect of perpendicular magnetic fields on a single-electron system with a strongly time-dependent electrostatic potential. Continuous improvements to the current quantization in these electron pumps are revealed by high-resolution measurements. Simulations show that the sensitivity of tunnel rates to the barrier potential is enhanced, stabilizing particular charge states. Nonadiabati…
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We study the effect of perpendicular magnetic fields on a single-electron system with a strongly time-dependent electrostatic potential. Continuous improvements to the current quantization in these electron pumps are revealed by high-resolution measurements. Simulations show that the sensitivity of tunnel rates to the barrier potential is enhanced, stabilizing particular charge states. Nonadiabatic excitations are also suppressed due to a reduced sensitivity of the Fock-Darwin states to electrostatic potential. The combination of these effects leads to significantly more accurate current quantization.
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Submitted 31 August, 2012; v1 submitted 22 July, 2011;
originally announced July 2011.
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Single- and few-electron dynamic quantum dots in a perpendicular magnetic field
Authors:
S. J. Wright,
A. L. Thorn,
M. D. Blumenthal,
S. P. Giblin,
M. Pepper,
T. J. B. M. Janssen,
M. Kataoka,
J. D. Fletcher,
G. A. C. Jones,
C. A. Nicoll,
Godfrey Gumbs,
D. A. Ritchie
Abstract:
We present experimental studies of the current pumped through a dynamic quantum dot over a wide range of magnetic fields. At low fields we observe repeatable structure indicating increased confinement of the electrons in the dynamic dot. At higher fields (B>3T), we observe structure which changes markedly from device to device suggesting that in this regime the transport is sensitive to local diso…
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We present experimental studies of the current pumped through a dynamic quantum dot over a wide range of magnetic fields. At low fields we observe repeatable structure indicating increased confinement of the electrons in the dynamic dot. At higher fields (B>3T), we observe structure which changes markedly from device to device suggesting that in this regime the transport is sensitive to local disorder. The results are significant for the development of dynamic quantum dot pumps as quantum standards of electrical current.
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Submitted 1 September, 2010;
originally announced September 2010.
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Destruction of chain-superconductivity in YBa_2Cu_4O_8 in a weak magnetic field
Authors:
A. Serafin,
J. D. Fletcher,
S. Adachi,
N. E. Hussey,
A. Carrington
Abstract:
We report measurements of the temperature dependent components of the magnetic penetration depth λ(T) in single crystal samples of YBa_2Cu_4O_8 using a radio frequency tunnel diode oscillator technique. We observe a downturn in λ(T) at low temperatures for currents flowing along the b and c axes but not along the a axis. The downturn in λ_b is suppressed by a small dc field of ~0.25 T. This and th…
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We report measurements of the temperature dependent components of the magnetic penetration depth λ(T) in single crystal samples of YBa_2Cu_4O_8 using a radio frequency tunnel diode oscillator technique. We observe a downturn in λ(T) at low temperatures for currents flowing along the b and c axes but not along the a axis. The downturn in λ_b is suppressed by a small dc field of ~0.25 T. This and the zero field anisotropy of λ(T) likely result from proximity induced superconducting on the CuO chains, however we also discuss the possibility that a significant part of the anisotropy might originate from the CuO2 planes.
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Submitted 20 August, 2010;
originally announced August 2010.
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Directional field-induced metallization of quasi-one-dimensional Li$_{0.9}$Mo$_6$O$_{17}$
Authors:
X. Xu,
A. F. Bangura,
J. G. Analytis,
J. D. Fletcher,
M. M. J. French,
N. Shannon,
J. He,
S. Zhang,
D. Mandrus,
R. Jin,
N. E. Hussey
Abstract:
We report a detailed magnetotransport study of the highly anisotropic quasi-one-dimensional oxide Li$_{0.9}$Mo$_6$O$_{17}$ whose in-chain electrical resistivity diverges below a temperature $T_{\rm min} \sim$ 25 K. For $T < T_{\rm min}$, a magnetic field applied parallel to the conducting chain induces a large negative magnetoresistance and ultimately, the recovery of a metallic state. We show e…
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We report a detailed magnetotransport study of the highly anisotropic quasi-one-dimensional oxide Li$_{0.9}$Mo$_6$O$_{17}$ whose in-chain electrical resistivity diverges below a temperature $T_{\rm min} \sim$ 25 K. For $T < T_{\rm min}$, a magnetic field applied parallel to the conducting chain induces a large negative magnetoresistance and ultimately, the recovery of a metallic state. We show evidence that this insulator/metal crossover is a consequence of field-induced suppression of a density-wave gap in a highly one-dimensional conductor. At the highest fields studied, there is evidence for the possible emergence of a novel superconducting state with an onset temperature $T_c >$ 10 K.
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Submitted 1 May, 2009;
originally announced May 2009.
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Quantum Oscillation Studies of the Fermi Surface of LaFePO
Authors:
A. Carrington,
A. I. Coldea,
J. D. Fletcher,
N. E. Hussey,
C. M. J. Andrew,
A. F. Bangura,
J. G. Analytis,
J. -H. Chu,
A. S. Erickson,
I. R. Fisher,
R. D. McDonald
Abstract:
We review recent experimental measurements of the Fermi surface of the iron-pnictide superconductor LaFePO using quantum oscillation techniques. These studies show that the Fermi surface topology is close to that predicted by first principles density functional theory calculations, consisting of quasi-two-dimensional electron-like and hole-like sheets. The total volume of the two hole sheets is…
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We review recent experimental measurements of the Fermi surface of the iron-pnictide superconductor LaFePO using quantum oscillation techniques. These studies show that the Fermi surface topology is close to that predicted by first principles density functional theory calculations, consisting of quasi-two-dimensional electron-like and hole-like sheets. The total volume of the two hole sheets is almost equal to that of the two electron sheets, and the hole and electron Fermi surface sheets are close to a nesting condition. No evidence for the predicted three dimensional pocket arising from the Fe $d_{z^2}$ band is found. Measurements of the effective mass suggest a renormalisation of around two, close to the value for the overall band renormalisation found in recent angle resolved photoemission measurements.
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Submitted 27 January, 2009; v1 submitted 26 January, 2009;
originally announced January 2009.
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Evidence for nodal superconductivity in LaFePO
Authors:
J. D. Fletcher,
A. Serafin,
L. Malone,
J. Analytis,
J-H Chu,
A. S. Erickson,
I. R. Fisher,
A. Carrington
Abstract:
In several iron-arsenide superconductors there is strong evidence for a fully gapped superconducting state consistent with either a conventional s-wave symmetry or an unusual $s_\pm$ state where there the gap changes sign between the electron and hole Fermi surface sheets. Here we report measurements of the penetration depth $λ(T)$ in very clean samples of the related iron-phosphide superconduct…
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In several iron-arsenide superconductors there is strong evidence for a fully gapped superconducting state consistent with either a conventional s-wave symmetry or an unusual $s_\pm$ state where there the gap changes sign between the electron and hole Fermi surface sheets. Here we report measurements of the penetration depth $λ(T)$ in very clean samples of the related iron-phosphide superconductor, LaFePO, at temperatures down to $\sim$ 100 mK. We find that $λ(T)$ varies almost perfectly linearly with $T$ strongly suggesting the presence of gap nodes in this compound. Taken together with other data, this suggests the gap function may not be generic to all pnictide superconductors.
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Submitted 19 December, 2008;
originally announced December 2008.
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Fermi surface of superconducting LaFePO determined by quantum oscillations
Authors:
A. I. Coldea,
J. D. Fletcher,
A. Carrington,
J. G. Analytis,
A. F. Bangura,
J. -H. Chu,
A. S. Erickson,
I. R. Fisher,
N. E. Hussey,
R. D. McDonald
Abstract:
We report extensive measurements of quantum oscillations in the normal state of the Fe-based superconductor LaFePO, (Tc ~ 6 K) using low temperature torque magnetometry and transport in high static magnetic fields (45 T). We find that the Fermi surface is in broad agreement with the band-structure calculations with the quasiparticle mass enhanced by a factor ~2. The quasi-two dimensional Fermi s…
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We report extensive measurements of quantum oscillations in the normal state of the Fe-based superconductor LaFePO, (Tc ~ 6 K) using low temperature torque magnetometry and transport in high static magnetic fields (45 T). We find that the Fermi surface is in broad agreement with the band-structure calculations with the quasiparticle mass enhanced by a factor ~2. The quasi-two dimensional Fermi surface consist of nearly-nested electron and hole pockets, suggesting proximity to a spin/charge density wave instability.
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Submitted 19 October, 2008; v1 submitted 30 July, 2008;
originally announced July 2008.
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Magnetic penetration depth of single crystal SmFeAsO_{1-x}F_y: a fully gapped superconducting state
Authors:
L. Malone,
J. D. Fletcher,
A. Serafin,
A. Carrington,
N. D. Zhigadlo,
Z. Bukowski,
S. Katrych,
J. Karpinski
Abstract:
We report measurements of the in-plane magnetic penetration depth $λ$ in single crystals of SmFeAsO$_{1-x}$F$_y$ ($x\simeq y \simeq 0.2$) with $T_c \simeq 45$ K. We find that at low temperature $λ$ has an exponential temperature dependence which suggests that the Fermi surface is fully gapped. The magnitude of the minimum energy gap, $Δ_1=1.1\pm 0.1 k_BT_c$ at T=0 K, is significantly smaller tha…
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We report measurements of the in-plane magnetic penetration depth $λ$ in single crystals of SmFeAsO$_{1-x}$F$_y$ ($x\simeq y \simeq 0.2$) with $T_c \simeq 45$ K. We find that at low temperature $λ$ has an exponential temperature dependence which suggests that the Fermi surface is fully gapped. The magnitude of the minimum energy gap, $Δ_1=1.1\pm 0.1 k_BT_c$ at T=0 K, is significantly smaller than the BCS weak-coupling value suggesting that the gap is either strongly anisotropic or varies significantly between the different Fermi surface sheets. Our data fits well a two gap model with an additional larger gap of magnitude $Δ_2 = 1.8\pm0.2 k_BT_c$ which is associated with $\sim 80$% of the total superfluid density.
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Submitted 24 June, 2008;
originally announced June 2008.
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Measurement of low energy charge correlations in underdoped spin-glass La-based cuprates using impedance spectroscopy
Authors:
G. R. Jelbert,
T. Sasagawa,
J. D. Fletcher,
T. Park,
J. D. Thompson,
C. Panagopoulos
Abstract:
We report on the charge kinetics of La_2CuO_4 lightly doped with Li and Sr. Impedance spectroscopy measurements down to 25mK and from 20Hz to 500kHz reveal evidence for low energy charge dynamics, which slow down with decreasing temperature. Both systems are acutely sensitive to stoichiometry. In the case of Sr substitution, which at higher carrier concentration evolves to a high temperature sup…
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We report on the charge kinetics of La_2CuO_4 lightly doped with Li and Sr. Impedance spectroscopy measurements down to 25mK and from 20Hz to 500kHz reveal evidence for low energy charge dynamics, which slow down with decreasing temperature. Both systems are acutely sensitive to stoichiometry. In the case of Sr substitution, which at higher carrier concentration evolves to a high temperature superconductor, the ground state in the pseudogap-doping regime is one of spatially segregated, dynamic charge domains. The charge carriers slow down at substantially lower temperatures than their spin counterparts and the dynamics are particularly sensitive to crystallographic direction. This is contrasted with the case of Li-doping.
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Submitted 13 June, 2008; v1 submitted 8 April, 2008;
originally announced April 2008.
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Shubnikov-de Haas oscillations in YBa_2Cu_4O_8
Authors:
A. F. Bangura,
J. D. Fletcher,
A. Carrington,
J. Levallois,
M. Nardone,
B. Vignolle,
P. J. Heard,
N. Doiron-Leyraud,
D. LeBoeuf,
L. Taillefer,
S. Adachi,
C. Proust,
N. E. Hussey
Abstract:
We report the observation of Shubnikov-de Haas oscillations in the underdoped cuprate superconductor YBa$_2$Cu$_4$O$_8$ (Y124). For field aligned along the c-axis, the frequency of the oscillations is $660\pm 30$ T, which corresponds to $\sim 2.4$ % of the total area of the first Brillouin zone. The effective mass of the quasiparticles on this orbit is measured to be $2.7\pm0.3$ times the free e…
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We report the observation of Shubnikov-de Haas oscillations in the underdoped cuprate superconductor YBa$_2$Cu$_4$O$_8$ (Y124). For field aligned along the c-axis, the frequency of the oscillations is $660\pm 30$ T, which corresponds to $\sim 2.4$ % of the total area of the first Brillouin zone. The effective mass of the quasiparticles on this orbit is measured to be $2.7\pm0.3$ times the free electron mass. Both the frequency and mass are comparable to those recently observed for ortho-II YBa$_2$Cu$_3$O$_{6.5}$ (Y123-II). We show that although small Fermi surface pockets may be expected from band structure calculations in Y123-II, no such pockets are predicted for Y124. Our results therefore imply that these small pockets are a generic feature of the copper oxide plane in underdoped cuprates.
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Submitted 17 December, 2007; v1 submitted 30 July, 2007;
originally announced July 2007.
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de Haas-van Alphen effect investigations of the electronic structure of pure and aluminum-doped MgB_2
Authors:
A. Carrington,
E. A. Yelland,
J. D. Fletcher,
J. R. Cooper
Abstract:
Understanding the superconducting properties of MgB_2 is based strongly on knowledge of its electronic structure. In this paper we review experimental measurements of the Fermi surface parameters of pure and Al-doped MgB_2 using the de Haas-van Alphen (dHvA) effect. In general, the measurements are in excellent agreement with the theoretical predictions of the electronic structure, including the…
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Understanding the superconducting properties of MgB_2 is based strongly on knowledge of its electronic structure. In this paper we review experimental measurements of the Fermi surface parameters of pure and Al-doped MgB_2 using the de Haas-van Alphen (dHvA) effect. In general, the measurements are in excellent agreement with the theoretical predictions of the electronic structure, including the strength of the electron-phonon coupling on each Fermi surface sheet. For the Al doped samples, we are able to measure how the band structure changes with doping and again these are in excellent agreement with calculations based on the virtual crystal approximation. We also review work on the dHvA effect in the superconducting state.
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Submitted 6 December, 2006;
originally announced December 2006.
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Penetration depth study of superconducting gap structure of 2\textit{H}-NbSe$_2$
Authors:
J. D. Fletcher,
A. Carrington,
P. Diener,
P. Rodiere,
J. P. Brison,
R. Prozorov,
T. Olheiser,
R. W. Giannetta
Abstract:
We report measurements of the temperature dependence of both in-plane and out-of-plane penetration depths ($λ_a$ and $λ_c$ respectively) in 2\textit{H}-NbSe$_2$. Measurements were made with a radio-frequency tunnel diode oscillator circuit at temperatures down to 100 mK. Analysis of the anisotropic superfluid density shows that a reduced energy gap is located on one or more of the quasi-two-dime…
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We report measurements of the temperature dependence of both in-plane and out-of-plane penetration depths ($λ_a$ and $λ_c$ respectively) in 2\textit{H}-NbSe$_2$. Measurements were made with a radio-frequency tunnel diode oscillator circuit at temperatures down to 100 mK. Analysis of the anisotropic superfluid density shows that a reduced energy gap is located on one or more of the quasi-two-dimensional Nb Fermi surface sheets rather than on the Se sheet, in contrast to some previous reports. This result suggests that the gap structure is not simply related to the weak electron-phonon coupling on the Se sheet and is therefore important for microscopic models of anisotropic superconductivity in this compound.
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Submitted 8 February, 2007; v1 submitted 2 May, 2006;
originally announced May 2006.
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de Haas-van Alphen effect investigation of the electronic structure of Al substituted MgB_2
Authors:
A. Carrington,
J. D. Fletcher,
J. R. Cooper,
O. J. Taylor,
L. Balicas,
N. D. Zhigadlo,
S. M. Kazakov,
J. Karpinski,
J. P. H. Charmant,
J. Kortus
Abstract:
We report a de Haas-van Alphen (dHvA) study of the electronic structure of Al doped crystals of MgB$_2$. We have measured crystals with $\sim 7.5$% Al which have a $T_c$ of 33.6 K, ($\sim 14$% lower than pure MgB$_2$). dHvA frequencies for the $σ$ tube orbits in the doped samples are lower than in pure MgB$_2$, implying a $16\pm2%$ reduction in the number of holes in this sheet of Fermi surface.…
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We report a de Haas-van Alphen (dHvA) study of the electronic structure of Al doped crystals of MgB$_2$. We have measured crystals with $\sim 7.5$% Al which have a $T_c$ of 33.6 K, ($\sim 14$% lower than pure MgB$_2$). dHvA frequencies for the $σ$ tube orbits in the doped samples are lower than in pure MgB$_2$, implying a $16\pm2%$ reduction in the number of holes in this sheet of Fermi surface. The mass of the quasiparticles on the larger $σ$ orbit is lighter than the pure case indicating a reduction in electron-phonon coupling constant $λ$. These observations are compared with band structure calculations, and found to be in excellent agreement.
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Submitted 14 July, 2005; v1 submitted 26 April, 2005;
originally announced April 2005.
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Temperature dependent anisotropy of the penetration depth and coherence length in MgB$_2
Authors:
J. D. Fletcher,
A. Carrington,
O. J. Taylor,
S. M. Kazakov,
J. Karpinski
Abstract:
We report measurements of the temperature dependent anisotropies ($γ_λ$ and $γ_ξ$) of both the London penetration depth $λ$ and the upper critical field of MgB$_2$. Data for $γ_λ=λ_c/λ_a$ was obtained from measurements of $λ_{a}$ and $λ_c$ on a single crystal sample using a tunnel diode oscillator technique. $γ_ξ=H_{c2}^{\parallel c}/H_{c2}^{\bot c}$ was deduced from field dependent specific hea…
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We report measurements of the temperature dependent anisotropies ($γ_λ$ and $γ_ξ$) of both the London penetration depth $λ$ and the upper critical field of MgB$_2$. Data for $γ_λ=λ_c/λ_a$ was obtained from measurements of $λ_{a}$ and $λ_c$ on a single crystal sample using a tunnel diode oscillator technique. $γ_ξ=H_{c2}^{\parallel c}/H_{c2}^{\bot c}$ was deduced from field dependent specific heat measurements on the same sample. $γ_λ$ and $γ_ξ$ have opposite temperature dependencies, but close to $T_c$ tend to a common value ($γ_λ\simeq γ_ξ=1.75\pm0.05$). These results are in good agreement with theories accounting for the two gap nature of MgB$_2$
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Submitted 26 April, 2005; v1 submitted 18 January, 2005;
originally announced January 2005.
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Interpretation of the angular dependence of the de Haas-van Alphen effect in MgB_2
Authors:
A. Carrington,
J. D. Fletcher,
H. Harima
Abstract:
We present detailed results for the amplitude and field dependence of the de Haas-van Alphen (dHvA) signal arising from the electron-like $π$ sheet of Fermi surface in MgB_2. Our data and analysis show that the dip in dHvA amplitude when the field is close to the basal plane is caused by a beat between two very similar dHvA frequencies and not a spin-zero effect as previously assumed. Our result…
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We present detailed results for the amplitude and field dependence of the de Haas-van Alphen (dHvA) signal arising from the electron-like $π$ sheet of Fermi surface in MgB_2. Our data and analysis show that the dip in dHvA amplitude when the field is close to the basal plane is caused by a beat between two very similar dHvA frequencies and not a spin-zero effect as previously assumed. Our results imply that the Stoner enhancement factors in MgB_2 are small on both the Sigma and Pi sheets.
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Submitted 14 December, 2004;
originally announced December 2004.
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Damping of the de Haas-van Alphen oscillations in the superconducting state of MgB_2
Authors:
J. D. Fletcher,
A. Carrington,
S. M. Kazakov,
J. Karpinski
Abstract:
The de Haas-van Alphen (dHvA) signal arising from orbits on the $π$ Fermi surface sheet of the two-gap superconductor MgB$_2$ has been observed in the vortex state below $H_{c2}$. An extra attenuation of the dHvA signal, beyond those effects described in the conventional Lifshitz-Kosevich expression, is seen due to the opening of the superconducting gap. Our data show that the $π$ band gap is st…
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The de Haas-van Alphen (dHvA) signal arising from orbits on the $π$ Fermi surface sheet of the two-gap superconductor MgB$_2$ has been observed in the vortex state below $H_{c2}$. An extra attenuation of the dHvA signal, beyond those effects described in the conventional Lifshitz-Kosevich expression, is seen due to the opening of the superconducting gap. Our data show that the $π$ band gap is still present up to $H_{c2}$. The data are compared to current theories of dHvA oscillations in the superconducting state which allow us to extract estimates for the evolution of the $π$ band gap with magnetic field. Contrary to results for other materials, we find that the most recent theories dramatically underestimate the damping in MgB$_2$.
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Submitted 6 May, 2004;
originally announced May 2004.
