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Limited Diffusion of Silicon in GaN: A DFT Study Supported by Experimental Evidence
Authors:
Karol Kawka,
Pawel Kempisty,
Akira Kusaba,
Krzysztof Golyga,
Karol Pozyczka,
Michal Fijalkowski,
Michal Bockowski
Abstract:
Silicon (Si) is the primary donor dopant in gallium nitride (GaN), introduced through epitaxial growth or ion implantation. However, precise control over Si diffusion remains a critical challenge for high-performance device applications. This study investigates Si diffusion mechanisms in bulk GaN using first-principles density functional theory (DFT) calculations, supported by ultra-high-pressure…
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Silicon (Si) is the primary donor dopant in gallium nitride (GaN), introduced through epitaxial growth or ion implantation. However, precise control over Si diffusion remains a critical challenge for high-performance device applications. This study investigates Si diffusion mechanisms in bulk GaN using first-principles density functional theory (DFT) calculations, supported by ultra-high-pressure annealing (UHPA) experiments. Vacancy-mediated diffusion pathways were analyzed using the SIESTA code, with minimum energy paths (MEPs) and activation barriers determined via the nudged elastic band (NEB) method. The results indicate that Si diffusion barriers vary with crystallographic direction, with the lowest barrier of 3.2 eV along [11-20] and the highest barrier of ~9.9 eV along [1-100], rendering diffusion in this direction highly improbable. Alternative diffusion mechanisms, including direct exchange and ring-like migration, exhibit prohibitively high barriers ($>$12 eV). Phonon calculations confirm that temperature-induced reductions in effective diffusion barriers are minimal. Experimental validation using SIMS analysis on Si-implanted GaN samples subjected to UHPA (1450°C, 1 GPa) confirms negligible Si diffusion under these extreme conditions. These findings resolve inconsistencies in prior reports and establish that Si-doped GaN remains highly stable, ensuring reliable doping profiles for advanced electronic and optoelectronic applications.
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Submitted 27 March, 2025;
originally announced March 2025.
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Accelerated recrystallization of nanocrystalline films as a manifestation of the inner size effect of the diffusion coefficient
Authors:
S. Petrushenko,
S. Dukarov,
M. Fijalkowski,
V. Sukhov
Abstract:
This paper is devoted to studying the recrystallization of 100 nm thick polycrystalline films of copper and silver. It is found that in copper films deposited by the thermal evaporation method onto a substrate at room temperature, a bimodal crystallite size distribution with maxima at 15 and 35 nm is observed. The bimodal distribution in copper films is preserved during annealing, which leads to a…
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This paper is devoted to studying the recrystallization of 100 nm thick polycrystalline films of copper and silver. It is found that in copper films deposited by the thermal evaporation method onto a substrate at room temperature, a bimodal crystallite size distribution with maxima at 15 and 35 nm is observed. The bimodal distribution in copper films is preserved during annealing, which leads to a shift of both peaks of the crystallite size distribution histograms to the larger sizes region. In contrast to Cu, micron-sized crystallites are present even in as-deposited Ag films besides the nanosized fraction. These grains are formed due to the phenomenon of self-annealing and weakly evolve during heating owing to grain growth stagnation. The nanosized fraction in as-deposited Ag films is represented by crystallites with the most probable size of 25 nm, which increases to 50 nm as a result of short-term annealing at the temperature of 250°C. The grain-boundary diffusion coefficient was determined, which is more than 10-18 m2/s for both films of metals. The obtained value indicates a multiple intensification of self-diffusion processes in films, the thickness of which allows us to refer them to macroscopic sample
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Submitted 3 February, 2025;
originally announced February 2025.
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Quantum anomalous Hall effect for metrology
Authors:
Nathaniel J. Huáng,
Jessica L. Boland,
Kajetan M. Fijalkowski,
Charles Gould,
Thorsten Hesjedal,
Olga Kazakova,
Susmit Kumar,
Hansjörg Scherer
Abstract:
The quantum anomalous Hall effect (QAHE) in magnetic topological insulators offers great potential to revolutionize quantum electrical metrology by establishing primary resistance standards operating at zero external magnetic field and realizing a universal "quantum electrical metrology toolbox" that can perform quantum resistance, voltage and current metrology in a single instrument. To realize s…
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The quantum anomalous Hall effect (QAHE) in magnetic topological insulators offers great potential to revolutionize quantum electrical metrology by establishing primary resistance standards operating at zero external magnetic field and realizing a universal "quantum electrical metrology toolbox" that can perform quantum resistance, voltage and current metrology in a single instrument. To realize such promise, significant progress is still required to address materials and metrological challenges -- among which, one main challenge is to make the bulk of the topological insulator sufficiently insulating to improve the robustness of resistance quantization. In this Perspective, we present an overview of the QAHE; discuss the aspects of topological material growth and characterization; and present a path towards an QAHE resistance standard realized in magnetically doped (Bi,Sb)$_2$Te$_3$ systems. We also present guidelines and methodologies for QAHE resistance metrology, its main limitations and challenges as well as modern strategies to overcome them.
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Submitted 13 January, 2025;
originally announced January 2025.
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Zero external magnetic field quantum standard of resistance at the 10-9 level
Authors:
D. K. Patel,
K. M. Fijalkowski,
M. Kruskopf,
N. Liu,
M. Götz,
E. Pesel,
M. Jaime,
M. Klement,
S. Schreyeck,
K. Brunner,
C. Gould,
L. W. Molenkamp,
H. Scherer
Abstract:
The quantum anomalous Hall effect holds promise as a disruptive innovation in condensed matter physics and metrology, as it gives access to Hall resistance quantization in terms of the von-Klitzing constant RK = h/e2 at zero external magnetic field. In this work, we study the accuracy of Hall resistance quantization in a device based on the magnetic topological insulator material (V,Bi,Sb)2Te3. We…
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The quantum anomalous Hall effect holds promise as a disruptive innovation in condensed matter physics and metrology, as it gives access to Hall resistance quantization in terms of the von-Klitzing constant RK = h/e2 at zero external magnetic field. In this work, we study the accuracy of Hall resistance quantization in a device based on the magnetic topological insulator material (V,Bi,Sb)2Te3. We show that the relative deviation of the Hall resistance from RK at zero external magnetic field is (4.4 +/- 8.7) nohm/ohm when extrapolated to zero measurement current, and (8.6 +/- 6.7) nohm/ohm when extrapolated to zero longitudinal resistivity (each with combined standard uncertainty, k = 1), which sets a new benchmark for the quantization accuracy in topological matter. This precision and accuracy at the nohm/ohm level (or 10-9 of relative uncertainty) achieve the thresholds for relevant metrological applications and establish a zero external magnetic field quantum standard of resistance - an important step towards the integration of quantum-based voltage and resistance standards into a single universal quantum electrical reference.
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Submitted 22 January, 2025; v1 submitted 17 October, 2024;
originally announced October 2024.
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Balanced Quantum Hall Resistor
Authors:
Kajetan M. Fijalkowski,
Nan Liu,
Martin Klement,
Steffen Schreyeck,
Karl Brunner,
Charles Gould,
Laurens W. Molenkamp
Abstract:
The quantum anomalous Hall effect in magnetic topological insulators has been recognized as a promising platform for applications in quantum metrology. The primary reason for this is the electronic conductance quantization at zero external magnetic field, which allows to combine it with the quantum standard of voltage. Here we demonstrate a measurement scheme that increases the robustness of the z…
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The quantum anomalous Hall effect in magnetic topological insulators has been recognized as a promising platform for applications in quantum metrology. The primary reason for this is the electronic conductance quantization at zero external magnetic field, which allows to combine it with the quantum standard of voltage. Here we demonstrate a measurement scheme that increases the robustness of the zero magnetic field quantum anomalous Hall resistor, allowing for higher operational currents. This is achieved by simultaneous current injection into the two disconnected perimeters of a multi-terminal Corbino device to balance the electrochemical potential between the edges, screening the electric field that drives back-scattering through the bulk, and thus improving the stability of the quantization at increased currents. This approach is not only applicable to devices based on the quantum anomalous Hall effect, but more generally can also be applied to existing quantum resistance standards that rely on the integer quantum Hall effect.
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Submitted 6 February, 2024;
originally announced February 2024.
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Off-stoichiometric effect on magnetic and electron transport properties of Fe$_2$VAl$_{1.35}$ in respect to Ni$_2$VAl; Comparative study
Authors:
Andrzej Ślebarski,
Marcin Fijałkowski,
Józef Deniszczyk,
Maciej M. Maśka,
Dariusz Kaczorowski
Abstract:
Density functional theory (DFT) calculations confirm that the structurally ordered Fe$_2$VAl Heusler alloy is nonmagnetic narrow-gap semiconductor. This compound is apt to form various disordered modifications with high concentration of antisite defects. We study the effect of structural disorder on the electronic structure, magnetic, and electronic transport properties of the full Heusler alloy F…
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Density functional theory (DFT) calculations confirm that the structurally ordered Fe$_2$VAl Heusler alloy is nonmagnetic narrow-gap semiconductor. This compound is apt to form various disordered modifications with high concentration of antisite defects. We study the effect of structural disorder on the electronic structure, magnetic, and electronic transport properties of the full Heusler alloy Fe$_2$VAl and its off-stoichiometric equivalent Fe$_2$VAl$_{1.35}$. Data analysis in relation to {\it ab initio} calculations indicates an appearance of antisite disorder mainly due to Fe--V and Fe--Al stoichiometric variations. The data for weakly magnetic Fe$_2$VAl$_{1.35}$ are discussed in respect to Ni$_2$VAl. Fe$_2$VAl$_{1.35}$ can be classified as a nearly ferromagnetic metal with a pronounced spin glassy contribution, which, however, does not give a predominant effect on its thermoelectric properties. The figure of merit $ZT$ is at 300 K about 0.05 for the Fe sample and 0.02 for Ni one, respectively. However, it is documented that the narrow $d$ band resulting from Fe/V site exchange can be responsible for the unusual temperature dependencies of the physical properties of the Fe2TiAl$_{1.35}$ alloy, characteristic of strongly correlated electron systems. As an example, the magnetic susceptibility of Fe$_2$VAl$_{1.35}$ exhibits singularity characteristic of a Griffiths phase, appearing as an inhomogeneous electronic state below $T_G\sim 200$ K. We also performed numerical analysis which supports the Griffiths phase scenario.
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Submitted 22 January, 2024;
originally announced January 2024.
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Non-Fermi liquid behavior of doped Kondo insulator: The unique properties of CeRhSb$_{1-x}$Te$_x$
Authors:
A. Ślebarski,
Józef Spałek,
M. Fijałkowski
Abstract:
It follows from our analysis of CeRhSb that the formation of Kondo insulator state due to the presence of the collective spin singlet state is strongly reduced by its doping with various dopants when their amount exceeds 8--10\%, regardless of whether they are substituted for Ce, Rh or Sb. A wide variety of experimental results (electrical resistivity $ρ$, magnetic susceptibility $χ$, specific hea…
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It follows from our analysis of CeRhSb that the formation of Kondo insulator state due to the presence of the collective spin singlet state is strongly reduced by its doping with various dopants when their amount exceeds 8--10\%, regardless of whether they are substituted for Ce, Rh or Sb. A wide variety of experimental results (electrical resistivity $ρ$, magnetic susceptibility $χ$, specific heat $C$, x-ray photoelectron spectroscopy) and theoretical investigations have convincingly demonstrated the proposed earlier scaling law $χ\timesρ=const.$ in the Kondo insulator regime, which is universal for all known Kondo insulators. We also analyze the properties of the Griffiths--phase for CeRhSb when Pd substitutes Rh, or Sb is fractionally replaced by Te and Sn, whereas doping of Ce with La leads to the formation of magnetic cluster structure as a result of the Kondo hole effect. Magnetoresistance of CeRhSb and CeRhSb$_{0.98}$Te$_{0.02}$ as a function of the field $B$ shows a $-B^2$ behavior, which provides evidence for the topologically nontrivial nature of these compounds, as was previously predicted theoretically for CeRhSb on the basis on the band structure calculations.
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Submitted 10 February, 2023;
originally announced February 2023.
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Molecular Beam Epitaxy of a Half-Heusler Topological Superconductor Candidate YPtBi
Authors:
Jiwoong Kim,
Kajetan M. Fijalkowski,
Johannes Kleinlein,
Claus Schumacher,
Anastasios Markou,
Charles Gould,
Steffen Schreyeck,
Claudia Felser,
Laurens W. Molenkamp
Abstract:
The search for topological superconductivity has motivated investigations into materials that combine topological and superconducting properties. The half-Heusler compound YPtBi appears to be such a material, however experiments have thus far been limited to bulk single crystals, drastically limiting the scope of available experiments. This has made it impossible to investigate the potential topol…
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The search for topological superconductivity has motivated investigations into materials that combine topological and superconducting properties. The half-Heusler compound YPtBi appears to be such a material, however experiments have thus far been limited to bulk single crystals, drastically limiting the scope of available experiments. This has made it impossible to investigate the potential topological nature of the superconductivity in this material. Experiments to access details about the superconducting state require sophisticated lithographic structures, typically based on thin films. Here we report on the establishment of high crystalline quality epitaxial thin films of YPtBi(111), grown using molecular beam epitaxy on Al2O3(0001) substrates. A robust superconducting state is observed, with both critical temperature and critical field consistent with that previously reported for bulk crystals. Moreover we find that AlOx capping sufficiently protects the sample surface from degradation to allow for proper lithography. Our results pave a path towards the development of advanced lithographic structures, that will allow the exploration of the potentially topological nature of superconductivity in YPtBi.
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Submitted 23 November, 2022;
originally announced November 2022.
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Macroscopic Quantum Tunneling of a Topological Ferromagnet
Authors:
Kajetan M. Fijalkowski,
Nan Liu,
Pankaj Mandal,
Steffen Schreyeck,
Karl Brunner,
Charles Gould,
Laurens W. Molenkamp
Abstract:
The recent advent of topological states of matter spawned many significant discoveries. The quantum anomalous Hall effect[1-3] is a prime example due to its potential for applications in quantum metrology[4, 5] as well as its influence on fundamental research into the underlying topological and magnetic states[6-11] and axion electrodynamics[2, 12-14]. Here, we perform electronic transport studies…
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The recent advent of topological states of matter spawned many significant discoveries. The quantum anomalous Hall effect[1-3] is a prime example due to its potential for applications in quantum metrology[4, 5] as well as its influence on fundamental research into the underlying topological and magnetic states[6-11] and axion electrodynamics[2, 12-14]. Here, we perform electronic transport studies on a (V,Bi,Sb)2Te3 ferromagnetic topological insulator nanostructure in the quantum anomalous Hall regime. This allows us access to the dynamics of an individual ferromagnetic domain. The volume of the domain is estimated to be about 85 000 nm3, containing some 50 000 vanadium atoms, spread over a macroscopic distance of 115 nm. Telegraph noise resulting from the magnetization fluctuations of this domain is observed in the Hall signal. Careful analysis of the influence of temperature and external magnetic field on the domain switching statistics provides evidence for quantum tunneling of magnetization[15-22] in a macrospin state. This ferromagnetic macrospin is not only the largest magnetic object in which quantum tunneling has been observed, but also the first observation of the effect in a topological state of matter.
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Submitted 8 June, 2022;
originally announced June 2022.
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Antiferromagnetic order in MnBi2Te4 films grown on Si(111) by molecular beam epitaxy
Authors:
N. Liu,
S. Schreyeck,
K. M. Fijalkowski,
M. Kamp,
K. Brunner,
C. Gould,
L. W. Molenkamp
Abstract:
MnBi2Te4 has recently been predicted and shown to be a magnetic topological insulator with intrinsic antiferromagnetic order. However, it remains a challenge to grow stoichiometric MnBi2Te4 films by molecular beam epitaxy (MBE) and to observe pure antiferromagnetic order by magnetometry. We report on a detailed study of MnBi2Te4 films grown on Si(111) by MBE with elemental sources. Films of about…
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MnBi2Te4 has recently been predicted and shown to be a magnetic topological insulator with intrinsic antiferromagnetic order. However, it remains a challenge to grow stoichiometric MnBi2Te4 films by molecular beam epitaxy (MBE) and to observe pure antiferromagnetic order by magnetometry. We report on a detailed study of MnBi2Te4 films grown on Si(111) by MBE with elemental sources. Films of about 100 nm thickness are analyzed in stoichiometric, structural, magnetic and magnetotransport properties with high accuracy. High-quality MnBi2Te4 films with nearly perfect septuple-layer structure are realized and structural defects typical for epitaxial van-der-Waals layers are analyzed. The films reveal antiferromagnetic order with a Neel temperature of 19 K, a spin-flop transition at a magnetic field of 2.5 T and a resistivity of 1.6 mOhm cm. These values are comparable to that of bulk MnBi2Te4 crystals. Our results provide an important basis for realizing and identifying single-phase MnBi2Te4 films with antiferromagnetic order grown by MBE.
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Submitted 27 November, 2021;
originally announced November 2021.
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Quantum anomalous Hall edge channels survive up to the Curie temperature
Authors:
Kajetan M. Fijalkowski,
Nan Liu,
Pankaj Mandal,
Steffen Schreyeck,
Karl Brunner,
Charles Gould,
Laurens W. Molenkamp
Abstract:
Achieving metrological precision of quantum anomalous Hall resistance quantization at zero magnetic field so far remains limited to temperatures of the order of 20 mK, while the Curie temperature in the involved material is as high as 20 K. The reason for this discrepancy remains one of the biggest open questions surrounding the effect, and is the focus of this article. Here we show, through a car…
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Achieving metrological precision of quantum anomalous Hall resistance quantization at zero magnetic field so far remains limited to temperatures of the order of 20 mK, while the Curie temperature in the involved material is as high as 20 K. The reason for this discrepancy remains one of the biggest open questions surrounding the effect, and is the focus of this article. Here we show, through a careful analysis of the non-local voltages on a multi-terminal Corbino geometry, that the chiral edge channels continue to exist without applied magnetic field up to the Curie temperature of bulk ferromagnetism of the magnetic topological insulator, and that thermally activated bulk conductance is responsible for this quantization breakdown. Our results offer important insights on the nature of the topological protection of these edge channels, provide an encouraging sign for potential applications, and establish the multi-terminal Corbino geometry as a powerful tool for the study of edge channel transport in topological materials.
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Submitted 3 September, 2021;
originally announced September 2021.
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Any Axion Insulator Must be a Bulk Three-Dimensional Topological Insulator
Authors:
K. M. Fijalkowski,
N. Liu,
M. Hartl,
M. Winnerlein,
P. Mandal,
A. Coschizza,
A. Fothergill,
S. Grauer,
S. Schreyeck,
K. Brunner,
M. Greiter,
R. Thomale,
C. Gould,
L. W. Molenkamp
Abstract:
In recent attempts to observe axion electrodynamics, much effort has focused on trilayer heterostructures of magnetic topological insulators, and in particular on the examination of a so-called zero Hall plateau, which has misguidedly been overstated as direct evidence of an axion insulator state. We investigate the general notion of axion insulators, which by definition must contain a nontrivial…
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In recent attempts to observe axion electrodynamics, much effort has focused on trilayer heterostructures of magnetic topological insulators, and in particular on the examination of a so-called zero Hall plateau, which has misguidedly been overstated as direct evidence of an axion insulator state. We investigate the general notion of axion insulators, which by definition must contain a nontrivial volume to host the axion term. We conduct a detailed magneto-transport analysis of Chern insulators comprised of a single magnetic topological insulator layer of varying thickness as well as trilayer structures, for samples optimized to yield a perfectly quantized anomalous Hall effect. Our analysis gives evidence for a topological magneto-electric effect quantized in units of e$^2$/2h, allowing us to identify signatures of axion electrodynamics. Our observations may provide direct experimental access to electrodynamic properties of the universe beyond the traditional Maxwell equations, and challenge the hitherto proclaimed exclusive link between the observation of a zero Hall plateau and an axion insulator.
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Submitted 20 May, 2021;
originally announced May 2021.
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Diffusion of Be in gallium nitride: Experiment and modelling
Authors:
Rafał Jakieła,
Kacper Sierakowski,
Tomasz Sochacki,
Małgorzata Iwińska,
Michał Fijalkowski,
Adam Barcz,
Michał Boćkowski
Abstract:
Diffusion mechanism of beryllium in gallium nitride was investigated by analyzing temperature-dependent diffusion profiles from an infinite source. Beryllium atoms were implanted into a high structural quality gallium nitride layer crystallized by halide vapor phase epitaxy on an ammonothermal gallium nitride substrate. Post-implantation annealing was performed at different temperatures, between 1…
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Diffusion mechanism of beryllium in gallium nitride was investigated by analyzing temperature-dependent diffusion profiles from an infinite source. Beryllium atoms were implanted into a high structural quality gallium nitride layer crystallized by halide vapor phase epitaxy on an ammonothermal gallium nitride substrate. Post-implantation annealing was performed at different temperatures, between 1000°C and 1400°C, under high nitrogen pressure. Beryllium profiles were analyzed in the as-implanted and annealed samples by secondary ion mass spectrometry. It was shown that the diffusion of the dopant results from the combination of two mechanisms: rapid interstitial and slow interstitial-substitutional diffusion. The pre-exponential factor as well as activation energy for both diffusion paths were determined. Moreover, from the characteristic features of beryllium depth profiles, the formation energies of gallium vacancy and beryllium in interstitial position were calculated and compared to the theoretical values.
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Submitted 21 January, 2020;
originally announced January 2020.
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Coexistence of surface and bulk ferromagnetism mimics skyrmion Hall effect in a topological insulator
Authors:
Kajetan M. Fijalkowski,
Matthias Hartl,
Martin Winnerlein,
Pankaj Mandal,
Steffen Schreyeck,
Karl Brunner,
Charles Gould,
Laurens W. Molenkamp
Abstract:
Here we report the investigation of the anomalous Hall effect in the magnetically doped topological insulator (V,Bi,Sb)2Te3. We find it contains two contributions of opposite sign. Both components are found to depend differently on carrier density, leading to a sign inversion of the total anomalous Hall effect as a function of applied gate voltage. The two contributions are found to have different…
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Here we report the investigation of the anomalous Hall effect in the magnetically doped topological insulator (V,Bi,Sb)2Te3. We find it contains two contributions of opposite sign. Both components are found to depend differently on carrier density, leading to a sign inversion of the total anomalous Hall effect as a function of applied gate voltage. The two contributions are found to have different magnetization reversal fields, which in combination with a temperature dependent study points towards the coexistence of two ferromagnetic orders in the system. Moreover, we find that the sign of total anomalous Hall response of the system depends on the thickness and magnetic doping density of the magnetic layer. The thickness dependence suggests that the two ferromagnetic components originate from the surface and bulk of the magnetic topological insulator film. We believe that our observations provide insight on the magnetic behavior, and thus will contribute to an eventual understanding of the origin of magnetism in this material class. In addition, our data bears a striking resemblance to anomalous Hall signals often associated with skyrmion contributions. Our analysis provides a straightforward explanation for both the magnetic field dependence of the Hall signal and the observed change in sign without needing to invoke skyrmions, and thus suggest that caution is needed when making claims of effects from skyrmion phases.
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Submitted 5 December, 2019;
originally announced December 2019.
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Non-Majorana Origin of the Half-Quantized Conductance Plateau in Quantum Anomalous Hall Insulator and Superconductor Hybrid Structures
Authors:
Morteza Kayyalha,
Di Xiao,
Ruoxi Zhang,
Jaeho Shin,
Jue Jiang,
Fei Wang,
Yi-Fan Zhao,
Ling Zhang,
Kajetan M. Fijalkowski,
Pankaj Mandal,
Martin Winnerlein,
Charles Gould,
Qi Li,
Laurens W. Molenkamp,
Moses H. W. Chan,
Nitin Samarth,
Cui-Zu Chang
Abstract:
A quantum anomalous Hall (QAH) insulator coupled to an s-wave superconductor is predicted to harbor a topological superconducting phase, the elementary excitations of which (i.e. Majorana fermions) can form topological qubits upon non-Abelian braiding operations. A recent transport experiment interprets the half-quantized two-terminal conductance plateau as the presence of chiral Majorana fermions…
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A quantum anomalous Hall (QAH) insulator coupled to an s-wave superconductor is predicted to harbor a topological superconducting phase, the elementary excitations of which (i.e. Majorana fermions) can form topological qubits upon non-Abelian braiding operations. A recent transport experiment interprets the half-quantized two-terminal conductance plateau as the presence of chiral Majorana fermions in a millimeter-size QAH-Nb hybrid structure. However, there are concerns about this interpretation because non-Majorana mechanisms can also generate similar signatures, especially in a disordered QAH system. Here, we fabricated QAH-Nb hybrid structures and studied the QAH-Nb contact transparency and its effect on the corresponding two-terminal conductance. When the QAH film is tuned to the metallic regime by electric gating, we observed a sharp zero-bias enhancement in the differential conductance, up to 80% at zero magnetic field. This large enhancement suggests high probability of Andreev reflection and transparent interface between the magnetic topological insulator (TI) and Nb layers. When the magnetic TI film is in the QAH state with well-aligned magnetization, we found that the two-terminal conductance is always half-quantized. Our experiment provides a comprehensive understanding of the superconducting proximity effect observed in QAH-superconductor hybrid structures and shows that the half-quantized conductance plateau is unlikely to be induced by chiral Majorana fermions.
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Submitted 12 April, 2019;
originally announced April 2019.
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The effective increase in atomic scale disorder by doping and superconductivity in Ca$_3$Rh$_4$Sn$_{13}$
Authors:
A. Slebarski,
P. Zajdel,
M. Fijalkowski,
M. M. Maska,
P. Witas,
J. Goraus,
Y. Fang,
D. C. Arnold,
M. B. Maple
Abstract:
The comprehensive research of the electronic structure, thermodynamic and electrical transport properties reveals the existence of inhomogeneous superconductivity due to structural disorder in Ca$_3$Rh$_4$Sn$_{13}$ doped with La (Ca$_{3-x}$La$_x$Rh$_4$Sn$_{13}$) or Ce (Ca$_{3-x}$Ce$_x$Rh$_4$Sn$_{13}$) with superconducting critical temperatures $T_c^{\star}$ higher than those ($T_c$) observed in th…
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The comprehensive research of the electronic structure, thermodynamic and electrical transport properties reveals the existence of inhomogeneous superconductivity due to structural disorder in Ca$_3$Rh$_4$Sn$_{13}$ doped with La (Ca$_{3-x}$La$_x$Rh$_4$Sn$_{13}$) or Ce (Ca$_{3-x}$Ce$_x$Rh$_4$Sn$_{13}$) with superconducting critical temperatures $T_c^{\star}$ higher than those ($T_c$) observed in the parent compounds. The $T-x$ diagrams and the entropy $S(x)_T$ isotherms well document the relation between degree of an atomic disorder and separation of the {\it high-temperature} $T_c^{\star}$ and $T_c$-bulk phases. In these dirty superconductors with the mean free path much smaller than the coherence length, the Werthamer-Helfand-Hohenber theoretical model does not well fits the $H_{c2}(T)$ data. We suggest that this can result from two-band superconductivity or from the presence of strong inhomogeneity in these systems. The multiband model very well describes the $H-T$ dependencies, but the present results as well as our previous studies give arguments for the scenario based on the presence of nanoscopic inhomogeneity of the superconducting state. We also revisited the nature of structural phase transition at $T^{\star}\sim 130-170$ K and documented that there might be another precursor transition at higher temperatures. The impact of the magnetic Ce-Ce correlations on the increase of $T_c$ in respect to the critical temperatures of Ca$_{3-x}$La$_x$Rh$_4$Sn$_{13}$ is also discussed.
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Submitted 12 February, 2018;
originally announced February 2018.
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Zero-field quantum anomalous Hall metrology as a step towards a universal quantum standard unit system
Authors:
Martin Goetz,
Kajetan M. Fijalkowski,
Eckart Pesel,
Matthias Hartl,
Steffen Schreyeck,
Martin Winnerlein,
Stefan Grauer,
Hansjoerg Scherer,
Karl Brunner,
Charles Gould,
Franz J. Ahlers,
Laurens W. Molenkamp
Abstract:
In the quantum anomalous Hall effect, the edge states of a ferromagnetically doped topological insulator exhibit quantized Hall resistance and dissipationless transport at zero magnetic field. Up to now, however, the resistance was experimentally assessed with standard transport measurement techniques which are difficult to trace to the von-Klitzing constant R$_K$ with high precision. Here, we pre…
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In the quantum anomalous Hall effect, the edge states of a ferromagnetically doped topological insulator exhibit quantized Hall resistance and dissipationless transport at zero magnetic field. Up to now, however, the resistance was experimentally assessed with standard transport measurement techniques which are difficult to trace to the von-Klitzing constant R$_K$ with high precision. Here, we present a metrologically comprehensive measurement, including a full uncertainty budget, of the resistance quantization of V-doped (Bi,Sb)$_2$Te$_3$ devices without external magnetic field. We established as a new upper limit for a potential deviation of the quantized anomalous Hall resistance from RK a value of 0.26 +- 0.22 ppm, the smallest and most precise value reported to date. This provides another major step towards realization of the zero-field quantum resistance standard which in combination with Josephson effect will provide the universal quantum units standard in the future.
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Submitted 11 October, 2017;
originally announced October 2017.
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Scaling of the Quantum Anomalous Hall Effect as an Indicator of Axion Electrodynamics
Authors:
S. Grauer,
K. M. Fijalkowski,
S. Schreyeck,
M. Winnerlein,
K. Brunner,
R. Thomale,
C. Gould,
L. W. Molenkamp
Abstract:
We report on the scaling behavior of V-doped (Bi,Sb)$_2$Te$_3$ samples in the quantum anomalous Hall regime for samples of various thickness. While previous quantum anomalous Hall measurements showed the same scaling as expected from a two-dimensional integer quantum Hall state, we observe a dimensional crossover to three spatial dimensions as a function of layer thickness. In the limit of a suffi…
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We report on the scaling behavior of V-doped (Bi,Sb)$_2$Te$_3$ samples in the quantum anomalous Hall regime for samples of various thickness. While previous quantum anomalous Hall measurements showed the same scaling as expected from a two-dimensional integer quantum Hall state, we observe a dimensional crossover to three spatial dimensions as a function of layer thickness. In the limit of a sufficiently thick layer, we find scaling behavior matching the flow diagram of two parallel conducting topological surface states of a three-dimensional topological insulator each featuring a fractional shift of $\frac{1}{2} e^2/h$ in the flow diagram Hall conductivity, while we recover the expected integer quantum Hall behavior for thinner layers. This constitutes the observation of a distinct type of quantum anomalous Hall effect, resulting from $\frac{1}{2} e^2/h$ Hall conductance quantization of three-dimensional topological insulator surface states, in an experiment which does not require decomposition of signal to separate the contribution of two surfaces. This provides a possible experimental link between quantum Hall physics and axion electrodynamics.
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Submitted 14 June, 2017;
originally announced June 2017.
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Epitaxy and Structural Properties of (V,Bi,Sb)$_2$Te$_3$ Layers Exhibiting the Quantum Anomalous Hall Effect
Authors:
M. Winnerlein,
S. Schreyeck,
S. Grauer,
S. Rosenberger,
K. M. Fijalkowski,
C. Gould,
K. Brunner,
L. W. Molenkamp
Abstract:
The influence of Sb content, substrate type and cap layers on the quantum anomalous Hall effect observed in V-doped (Bi,Sb)$_2$Te$_3$ magnetic topological insulators is investigated. Thin layers showing excellent quantization are reproducibly deposited by molecular beam epitaxy at growth conditions effecting a compromise between controlled layer properties and high crystalline quality. The Sb cont…
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The influence of Sb content, substrate type and cap layers on the quantum anomalous Hall effect observed in V-doped (Bi,Sb)$_2$Te$_3$ magnetic topological insulators is investigated. Thin layers showing excellent quantization are reproducibly deposited by molecular beam epitaxy at growth conditions effecting a compromise between controlled layer properties and high crystalline quality. The Sb content can be reliably determined from the in-plane lattice constant measured by X-ray diffraction, even in thin layers. This is the main layer parameter to be optimized in order to approach charge neutrality. Within a narrow range at about 80% Sb content, the Hall resistivity shows a maximum of about 10 k$Ω$ at 4 K and quantizes at mK temperatures. Under these conditions, thin layers grown on Si(111) or InP(111) and with or without a Te cap exhibit quantization. The quantization persists independently of the interfaces between cap, layer and substrate, the limited crystalline quality, and the degradation of the layer proving the robustness of the quantum anomalous Hall effect.
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Submitted 4 July, 2017; v1 submitted 19 April, 2017;
originally announced April 2017.
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Effect of atomic disorder and Ce doping on superconductivity of Ca3Rh4Sn13: Electric transport properties under high pressure
Authors:
A. Slebarski,
J. Goraus,
M. M. Maska,
P. Witas,
M. Fijalkowski,
C. T. Wolowiec,
Y. Fang,
M. B. Maple
Abstract:
We report the observation of a superconducting state below 8K coexistent with a spin-glass state caused by atomic disorder in Ce substituted Ca3Rh4Sn13. Measurements of specific heat, resistivity, and magnetism reveal the existence of inhomogeneous superconductivity in samples doped with Ce with superconducting critical temperatures Tc higher than those observed in the parent compound. For Ca3Rh4S…
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We report the observation of a superconducting state below 8K coexistent with a spin-glass state caused by atomic disorder in Ce substituted Ca3Rh4Sn13. Measurements of specific heat, resistivity, and magnetism reveal the existence of inhomogeneous superconductivity in samples doped with Ce with superconducting critical temperatures Tc higher than those observed in the parent compound. For Ca3Rh4Sn13, the negative value of the change in resistivity with pressure P, correlates well with the calculated decrease in the density of states at the Fermi energy with P. Based on band structure calculations performed under pressure, we demonstrate how the change in DOS would affect Tc of Ca3Rh4Sn13 under negative lattice pressure in samples that are strongly defected by quenching.
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Submitted 14 June, 2016;
originally announced June 2016.
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Engineering and Science Highlights of the KAT-7 Radio Telescope
Authors:
A. R. Foley,
T. Alberts,
R P. Armstrong,
A. Barta,
E. F. Bauermeister,
H. Bester,
S. Blose,
R. S. Booth,
D. H. Botha,
S. J. Buchner,
C. Carignan,
T. Cheetham,
K. Cloete,
G. Coreejes,
R. C. Crida,
S. D. Cross,
F. Curtolo,
A. Dikgale,
M. S. de Villiers,
L. J. du Toit,
S. W. P. Esterhuyse,
B. Fanaroff,
R. P. Fender,
M. Fijalkowski,
D. Fourie
, et al. (78 additional authors not shown)
Abstract:
The construction of the KAT-7 array in the Karoo region of the Northern Cape in South Africa was intended primarily as an engineering prototype for technologies and techniques applicable to the MeerKAT telescope. This paper looks at the main engineering and scien- tific highlights from this effort, and discusses their applicability to both MeerKAT and other next-generation radio telescopes. In par…
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The construction of the KAT-7 array in the Karoo region of the Northern Cape in South Africa was intended primarily as an engineering prototype for technologies and techniques applicable to the MeerKAT telescope. This paper looks at the main engineering and scien- tific highlights from this effort, and discusses their applicability to both MeerKAT and other next-generation radio telescopes. In particular we found that the composite dish surface works well, but it becomes complicated to fabricate for a dish lacking circular symmetry; the Stir- ling cycle cryogenic system with ion pump to achieve vacuum works but demands much higher maintenance than an equivalent Gifford-McMahon cycle system; the ROACH (Recon- figurable Open Architecture Computing Hardware)-based correlator with SPEAD (Stream- ing Protocol for Exchanging Astronomical Data) protocol data transfer works very well and KATCP (Karoo Array Telescope Control Protocol) control protocol has proven very flexible and convenient. KAT-7 has also been used for scientific observations where it has a niche in mapping low surface-brightness continuum sources, some extended HI halos and OH masers in star-forming regions. It can also be used to monitor continuum source variability, observe pulsars, and make VLBI observations
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Submitted 9 June, 2016;
originally announced June 2016.
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Superconductivity in the presence of disorder in skutterudite-related La$_3$Co$_4$Sn$_{13}$ and La$_3$Ru$_4$Sn$_{13}$ compounds; electrical transport and magnetic studies
Authors:
A. Slebarski,
M. M. Maska,
M. Fijalkowski,
C. A. McElroy,
M. B. Maple
Abstract:
La$_3$Co$_4$Sn$_{13}$ and La$_3$Ru$_4$Sn$_{13}$ were categorized as BCS superconductors. In a plot of the critical field $H_{c2}$ vs $T$, La$_3$Ru$_4$Sn$_{13}$ displays a second superconducting phase at the higher critical temperature $T_c^{\star}$, characteristic of inhomogeneous superconductors, while La$_3$Co$_4$Sn$_{13}$ shows bulk superconductivity below $T_c$. We observe a decrease in critic…
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La$_3$Co$_4$Sn$_{13}$ and La$_3$Ru$_4$Sn$_{13}$ were categorized as BCS superconductors. In a plot of the critical field $H_{c2}$ vs $T$, La$_3$Ru$_4$Sn$_{13}$ displays a second superconducting phase at the higher critical temperature $T_c^{\star}$, characteristic of inhomogeneous superconductors, while La$_3$Co$_4$Sn$_{13}$ shows bulk superconductivity below $T_c$. We observe a decrease in critical temperatures with external pressure and magnetic field for both compounds with $\frac{dT_c^{\star}}{dP} > \frac{dT_c}{dP}$. The pressure dependences of $T_c$ are interpreted according to the McMillan theory and understood to be a consequence of lattice stiffening. The investigation of the superconducting state of La$_3$Co$_x$Ru$_{4-x}$Sn$_{13}$ shows a $T_c^{\star}$ that is larger then $T_c$ for $x<4$. This unique and unexpected observation is discussed as a result of the local disorder and/or the effect of chemical pressure when Ru atoms are partially replaced by smaller Co atoms.
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Submitted 25 February, 2015;
originally announced February 2015.
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Superconductivity of La$_3$Co$_4$Sn$_{13}$ and La$_3$Rh$_4$Sn$_{13}$: A comparative study
Authors:
A. Slebarski,
M. Fijalkowski,
M. M. Maska,
M. Mierzejewski,
B. D. White,
M. B. Maple
Abstract:
We report the electric transport and thermodynamic properties of the skutterudite-related La$_3$Co$_4$Sn$_{13}$ and La$_3$Rh$_4$Sn$_{13}$ superconductors. Applying an external pressure to La$_3$Rh$_4$Sn$_{13}$, the resistive superconducting critical temperature Tc decreases, while the critical temperature of La$_3$Co$_4$Sn$_{13}$ is enhanced with increasing pressure. The positive pressure coeffici…
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We report the electric transport and thermodynamic properties of the skutterudite-related La$_3$Co$_4$Sn$_{13}$ and La$_3$Rh$_4$Sn$_{13}$ superconductors. Applying an external pressure to La$_3$Rh$_4$Sn$_{13}$, the resistive superconducting critical temperature Tc decreases, while the critical temperature of La$_3$Co$_4$Sn$_{13}$ is enhanced with increasing pressure. The positive pressure coefficient dTc/dP correlates with a subtle structural transition in La$_3$Co$_4$Sn$_{13}$ and is discussed in the context of lattice instabilities. Specific-heat data show that both compounds are typical BCS superconductors. However, La$_3$Rh$_4$Sn$_{13}$ also exhibits a second superconducting phase at higher temperatures, which is characteristic of inhomogeneous superconductors. We calculate the specific heat for an inhomogeneous superconducting phase, which agrees well with experimental C(T) data for La$_3$Rh$_4$Sn$_{13}$. We also found that an applied pressure reduces this second superconducting phase.
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Submitted 24 March, 2014;
originally announced March 2014.
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Object-oriented implementations of the MPDATA advection equation solver in C++, Python and Fortran
Authors:
Sylwester Arabas,
Dorota Jarecka,
Anna Jaruga,
Maciej Fijałkowski
Abstract:
Three object-oriented implementations of a prototype solver of the advection equation are introduced. The presented programs are based on Blitz++ (C++), NumPy (Python), and Fortran's built-in array containers. The solvers include an implementation of the Multidimensional Positive-Definite Advective Transport Algorithm (MPDATA). The introduced codes exemplify how the application of object-oriented…
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Three object-oriented implementations of a prototype solver of the advection equation are introduced. The presented programs are based on Blitz++ (C++), NumPy (Python), and Fortran's built-in array containers. The solvers include an implementation of the Multidimensional Positive-Definite Advective Transport Algorithm (MPDATA). The introduced codes exemplify how the application of object-oriented programming (OOP) techniques allows to reproduce the mathematical notation used in the literature within the program code. A discussion on the tradeoffs of the programming language choice is presented. The main angles of comparison are code brevity and syntax clarity (and hence maintainability and auditability) as well as performance. In the case of Python, a significant performance gain is observed when switching from the standard interpreter (CPython) to the PyPy implementation of Python. Entire source code of all three implementations is embedded in the text and is licensed under the terms of the GNU GPL license.
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Submitted 19 March, 2013; v1 submitted 7 January, 2013;
originally announced January 2013.
